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IRLR024资料

IRLR024资料

IRU3007TYPICAL APPLICATIONDESCRIPTIONThe IRU3007 controller IC is specifically designed to meet Intel specification for Pentium II ™ microprocessor ap-plications as well as the next generation of P6 family processors. The IRU3007 provides a single chip control-ler IC for the Vcore, LDO controller for GTL+ and an internal 200mA regulator for clock supply which are re-quired for the Pentium II applications. It also contains a switching controller to convert 5V to 3.3V regulator for on-board applications that uses either AT type power supply or is desired not to rely on the ATX power supply’s 3.3V output. These devices feature a patented topology that in combination with a few external components, as shown in the typical application circuit, will provide in excess of 14A of output current for an on-board DC/DC converter while automatically providing the right output voltage via the 5-bit internal DAC. The IRU3007 also fea-tures, loss-less current sensing for both switchers by using the R DS(on) of the high-side power MOSFET as the sensing resistor, internal current limiting for the clock supply, a Power Good window comparator that switches its open collector output low when any one of the out-puts is outside of a pre-programmed window. Other fea-tures of the device are: Under-Voltage Lockout for both 5V and 12V supplies, an external programmable soft-start function, programming the oscillator frequency via an external resistor, Over-Voltage Protection (OVP) cir-cuitry for both switcher outputs and an internal thermal shutdown.Provides Single Chip Solution for Vcore, GTL+,Clock Supply & 3.3V Switcher On-BoardSecond switcher provides simple control for the on-board 3.3V supply200mA On-Board LDO RegulatorDesigned to meet Intel VRM 8.2 and 8.3 specifica-tion for Pentium II ™On-Board DAC programs the output voltage from 1.3V to 3.5VLinear Regulator Controller On-Board for 1.5V GTL+ supplyLoss-less Short Circuit ProtectionSynchronous Operation allows maximum efficiency Patented architecture allows fixed frequency operation as well as 100% duty cycle during dynamic loadMinimum Part Count Soft-StartHigh current totem pole drivers for directly driving the external Power MOSFETsPower Good function monitors all outputs Over-Voltage Protection circuitry protects the switcher outputs and generates a fault output Thermal ShutdownPACKAGE ORDER INFORMATIONFEATURES 5-BIT PROGRAMMABLE SYNCHRONOUS BUCK, NON-SYNCHRO-NOUS, ADJUSTABLE LDO AND 200mA ON-BOARD LDOAPPLICATIONSTotal Power Solution for Pentium II processor applicationNote: Pentium II and Pentium Pro are trademarks of Intel Corp.T A (°C) DEVICE PACKAGE0 To 70 IRU3007CW 28-pin Plastic SOIC WB (W)Data Sheet No. PD94142V O U T 3V O U T 25VV O U T 1V O U T 4元器件交易网IRU3007ELECTRICAL SPECIFICATIONSSupply UVLO Section UVLO Threshold-12V UVLO Hysteresis-12V UVLO Threshold-5V UVLO Hysteresis-5V Supply CurrentOperating Supply Current VID Section (Vcore only)DAC Output Voltage (Note 1)DAC Output Line Regulation DAC Output Temp Variation VID Input LO VID Input HI VID Input Internal Pull-Up Resistor to V5V FB 2 Voltage Oscillator Section (Internal)Osc Frequency ABSOLUTE MAXIMUM RATINGSV5 Supply Voltage .................................................... 7V V12 Supply Voltage .. (20V)Storage Temperature Range ...................................... -65°C To 150°C Operating Junction Temperature Range ..................... 0°C To 125°CUnless otherwise specified, these specifications apply over V12=12V, V5=5V and T A =0 to 70°C. Typical values refer to T A =25°C. Low duty cycle pulse testing is used which keeps junction and case temperatures equal to the ambient temperature.PARAMETER SYM TEST CONDITION MIN TYP MAX UNITS Switching Controllers; Vcore (V OUT 1) and I/O (V OUT 2)Supply Ramping Up Supply Ramping Up V12V5Rt=Open 0.99Vs 227100.44.30.3630Vs 0.10.522001.01Vs 0.8V V V V mAV %%V V K V V KHzIRU3007Error Comparator Section Input Bias Current Input Offset Voltage Delay to Output Current Limit Section CS Threshold Set Current CS Comp Offset Voltage Hiccup Duty Cycle Output Drivers Section Rise Time Fall Time Dead Band Time Between High Side and Synch Drive (Vcore Switcher Only)2.5V Regulator (V OUT 4)Reference Voltage Reference Voltage Dropout Voltage Load Regulation Line Regulation Input Bias Current Output Current Current Limit Thermal Shutdown 1.5V Regulator (V OUT 3)Reference Voltage Reference Voltage Input Bias Current Output Drive Current Power Good Section Core UV Lower Trip Point Core UV Upper Trip Point Core UV Hysteresis Core OV Upper Trip Point Core OV Lower Trip Point Core OV Hysteresis I/O UV lower trip point I/O UV Upper Trip Point Fb4 Lower Trip Point Fb4 Upper Trip Point Fb3 Lower Trip Point Fb3 Upper Trip Point Power Good Output LO Power Good Output HI Fault (Over-Voltage) Section Core OV Upper Trip Point Core OV Lower Trip Point Soft-Start Section Pull-Up Resistor to 5V I/O OV Upper Trip Point I/O OV Lower Trip Point Fault Output HI PARAMETER SYM TEST CONDITION MIN TYP MAX UNITS V DIFF =10mV C SS =0.1m F C L =3000pF C L =3000pF C L =3000pF T A =258C, V OUT 4=Fb4I O =200mA 1mA<I O <200mA 3.1V<V I/O <4V, V O =2.5V T A =258C, Gate3=Fb3V SEN 1 Ramping Down V SEN 1 Ramping Up V SEN 1 Ramping Up V SEN 1 Ramping Down V SEN 2 Ramping Down V SEN 2 Ramping Up Fb4 Ramping Down Fb4 Ramping Up Fb3 Ramping Down Fb3 Ramping Up R L =3mA R L =5K Pull Up to 5V V SEN 1 Ramping Up V SEN 1 Ramping Down OCSet=0V, Phase=5V V SEN 2 Ramping Up V SEN 2 Ramping Down I O =3mA -2-520030050m A mV ns m A mV %ns ns ns V V V %%m A mA mA 8C V V m A mA V V V V V V V V V V V V V V V V K V V V V2+2100+5222001070702001.2601.2600.60.50.21451.2601.2600.90Vs 0.92Vs 0.02Vs 1.10Vs 1.08Vs 0.02Vs 2.42.60.951.050.951.050.44.81.17Vs 1.15Vs 234.34.210V O 4V O 3IRU3007PIN DESCRIPTIONSNote 1: Vs refers to the set point voltage given in Table 1D40000000000000000D31111111100000000D21111000011110000D11100110011001100D01010101010101010Vs 1.301.351.401.451.501.551.601.651.701.751.801.851.901.952.002.05D41111111111111111D31111111100000000D21111000011110000D11100110011001100D01010101010101010Vs 2.02.12.22.32.42.52.62.72.82.93.03.13.23.33.43.5Table 1 - Set point voltage vs. VID codesOutput driver for the high-side power MOSFET for the I/O supply.This pin is connected to the Source of the power MOSFET for the I/O supply and itprovides the negative sensing for the internal current sensing circuitry.This pin selects a range of output voltages for the DAC. When in the LO state the rangeis 1.3V to 2.05V and when it switches to HI state the range is 2.0V to 3.5V. This pin is TTL compatible that realizes a logic “1” as either HI or Open. When left open, this pin is pulled up internally by a 27K V resistor to 5V supply.MSB input to the DAC that programs the output voltage. This pin is TTL compatible thatrealizes a logic “1” as either HI or Open. When left open, this pin is pulled up internally by a 27K V resistor to 5V supply.Input to the DAC that programs the output voltage. This pin is TTL compatible that real-izes a logic “1” as either HI or Open. When left open, this pin is pulled up internally by a27K V resistor to 5V supply.Input to the DAC that programs the output voltage. This pin is TTL compatible that real-izes a logic “1” as either HI or Open. When left open, this pin is pulled up internally by a27K V resistor to 5V supply.LSB input to the DAC that programs the output voltage. This pin is TTL compatible thatrealizes a logic “1” as either HI or Open. When left open, this pin is pulled up internally by a 27K V resistor to 5V supply.This pin is an open collector output that switches LO when any of the outputs are outsideof the specified under voltage trip point. It also switches low when V SEN 1 pin is more than 10% above the DAC voltage setting.This pin is connected to the Drain of the power MOSFET of the I/O supply and it providesthe positive sensing for the internal current sensing circuitry. An external resistor pro-grams the CS threshold depending on the R DS of the power MOSFET. An external ca-pacitor is placed in parallel with the programming resistor to provide high frequency noise filtering.PIN# PIN SYMBOL PIN DESCRIPTION 123456789UGate2Phase2VID4VID3VID2VID1VID0PGood OCSet2IRU3007This pin provides the feedback for the non-synchronous switching regulator. A resistordivider is connected from this pin to V OUT 2 and ground that sets the output voltage. The value of the resistor connected from V OUT 2 to Fb2 must be less than 100V .5V supply voltage. A high frequency capacitor (0.1 to 1m F) must be placed close to thispin and connected from this pin to the ground plane for noise free operation.This pin provides the soft-start for the 2 switching regulators. An internal resistor chargesan external capacitor that is connected from 5V supply to this pin which ramps up the outputs of the switching regulators, preventing the outputs from overshooting as well as limiting the input current. The second function of the Soft-Start cap is to provide long off time (HICCUP) for the synchronous MOSFET during current limiting.This pin has dual function. It acts as an output of the OVP circuitry or it can be used toprogram the frequency using an external resistor. When used as a fault detector, if any of the switcher outputs exceed the OVP trip point, the Fault pin switches to 12V and the soft-start cap is discharged. If the Fault pin is to be connected to any external circuitry,it needs to be buffered as shown in the application circuit.This pin provides the feedback for the internal LDO regulator that its output is V OUT 4.This pin is connected to the output of the I/O switching regulator. It is an input thatprovides sensing for the Under/Over-voltage circuitry for the I/O supply as well as the power for the internal LDO regulator.This pin is the output of the internal LDO regulator.This pin serves as the ground pin and must be connected directly to the ground plane.This pin controls the gate of an external transistor for the 1.5V GTL+ linear regulator.This pin provides the feedback for the linear regulator that its output drive is Gate3.No connection.This pin provides the feedback for the synchronous switching regulator. Typically this pincan be connected directly to the output of the switching regulator. However, a resistor divider is recommended to be connected from this pin to V OUT 1 and ground to adjust the output voltage for any drop in the output voltage that is caused by the trace resistance.The value of the resistor connected from V OUT 1 to Fb1 must be less than 100V .This pin is internally connected to the undervoltage and overvoltage comparators sensingthe Vcore status. It must be connected directly to the Vcore supply.This pin is connected to the Drain of the power MOSFET of the Core supply and itprovides the positive sensing for the internal current sensing circuitry. An external resis-tor programs the CS threshold depending on the R DS of the power MOSFET. An external capacitor is placed in parallel with the programming resistor to provide high frequency noise filtering.This pin serves as the Power ground pin and must be connected directly to the groundplane close to the source of the synchronous MOSFET. A high frequency capacitor (typically 1m F) must be connected from V12 pin to this pin for noise free operation.Output driver for the synchronous power MOSFET for the Core supply.This pin is connected to the Source of the power MOSFET for the Core supply and itprovides the negative sensing for the internal current sensing circuitry.Output driver for the high-side power MOSFET for the Core supply.This pin is connected to the 12V supply and serves as the power Vcc pin for the outputdrivers. A high frequency capacitor (typically 1m F) must be placed close to this pin and PGnd pin and be connected directly from this pin to the ground plane for noise free operation.PIN# PIN SYMBOL PIN DESCRIPTION 10111213141516171819202122232425262728Fb2V5SS Fault / Rt Fb4V SEN 2V OUT 4Gnd Gate3Fb3NC Fb1V SEN 1OCSet1PGnd LGate1Phase1UGate1V12IRU3007BLOCK DIAGRAMFigure 2 - Simplified block diagram of the IRU3007.PGoodFb4V OUT 4V SEN 2Gate3Fb3V SEN 1VID4V5V12S SFb2G n d UGate2Fault / RtPhase1OCSet2Phase2OCSet1LGate1UGate1Fb1VID3VID2VID1VID0PGndIRU3007TYPICAL APPLICATIONFigure 3 - Typical application of IRU3007 for an on-board DC-DC converter providing powerfor the Vcore, GTL+, Clock supply as well as an on-board 3.3V I/O supplyfor the Deschutes and the next generation processor applications.V V V OUT 1IRU3007IRU3007 APPLICATION PARTS LISTRef Desig Description Qty Part # Manuf Q1MOSFET1IRL3103S, TO-263 package IR Q2MOSFET1IRLR024, TO-252 package IR Q3MOSFET1IRL3103S, TO-263 package IR Q4MOSFET with Schottky1IRL3103D1S, TO-263 package IR D1Diode1MBRB1035, TO-263 package IR L1Inductor1L=1m H, 5052 core with 4 turns of Micro Metal1.0mm wireL2Inductor1L=4.7m H, 5052 core with 11 turns of Micro Metal1.0mm wireL3Inductor1L=2.7m H, 5052B core with 7 turns of Micro Metal1.2mm wireC1Capacitor, Electrolytic26MV1500GX, 1500m F, 6.3V Sanyo C2Capacitor, Electrolytic110MV470GX, 470m F, 10V Sanyo C3Capacitor, Electrolytic110MV1200GX, 1200m F, 10V Sanyo C4, 13Capacitor, Ceramic21000pF, 0603C5, 10Capacitor, Ceramic2220pF, 0603C8Capacitor, Ceramic11m F, 0805C9, 15, 19Capacitor, Ceramic31m F, 0603C14Capacitor, Electrolytic210MV1200GX, 1200m F, 10V Sanyo C16Capacitor, Electrolytic66MV1500GX, 1500m F, 6.3V Sanyo C17Capacitor, Electrolytic16MV1000GX, 1000m F, 6.3V Sanyo C18Capacitor, Electrolytic16MV150GX, 150m F, 6.3V Sanyo R1, 5, 13,Resistor4 4.7V, 5%, 120614R2Resistor175V, 1%, 0603R3, 6, 7, 8Resistor4100V, 1%, 0603R5Resistor119.1V, 1%, 0603R9Resistor1 1.5K V, 5%, 0603R10Resistor110V, 5%, 1206R12Resistor1 3.3K V, 5%, 0603R16, 17, 21Resistor3 2.2K V, 1%, 0603R19Resistor1220K V, 1%, 0603R22Resistor 110V, 5%, 0603IRU3007TYPICAL APPLICATION(Dual Layout with HIP6019)Figure 4 - Typical application of IRU3007 in a dual layout with HIP6019 for an on-board DC-DC converter providing power for the Vcore, GTL+, Clock supply as well as an on-board 3.3V I/O supply for theDeschutes and the next generation processor application.Components that need to be modified to make the dual layout work for HIP6019 and IRU3007:S - Short O - Open V - See IR or Harris parts list for the valueTable 2 - Dual layout component table.Part # R4 R11 R18 C6 C7 C9 C11 C12 C19 C20HIP6019 V O V V V O V V O V IRU3007 O S O O O V O O V OV V V OUT 1R22IRU3007Ref Desig Description QtyPart #Manuf Q1MOSFET 1IRL3103S, TO-263 package IR Q2MOSFET 1IRLR024, TO-252 package IR Q3MOSFET1IRL3103S, TO-263 package IR Q4MOSFET with Schottky 1IRL3103D1S, TO-263 package IR D1Diode 1MBRB1035, TO-263 package IR L1Inductor 1L=1m H, 5052 core with 4 turns of Micro Metal1.0 mm wireL2Inductor 1L=4.7m H, 5052 core with 11 turns of Micro Metal 1.0mm wireL3Inductor1L=2.7m H, 5052B core with 7 turns of Micro Metal 1.2mm wireC1Capacitor, Electrolytic 26MV1500GX, 1500m F, 6.3V Sanyo C2Capacitor, Electrolytic 110MV470GX, 470m F, 10V Sanyo C3Capacitor, Electrolytic 110MV1200GX, 1200m F, 10V Sanyo C4, 13Capacitor, Ceramic 21000pF, 0603C5, 10Capacitor, Ceramic2220pF, 0603C6,7,11,12Capacitor, Ceramic5See Table 2, dual layout component 200603 3 5C8Capacitor, Ceramic 11m F, 0805C9,15,19Capacitor, Ceramic 31m F, 0603C14Capacitor, Electrolytic 210MV1200GX, 1200m F, 10V Sanyo C16Capacitor, Electrolytic 66MV1500GX, 1500m F, 6.3V Sanyo C17Capacitor, Electrolytic 16MV1000GX, 1000m F, 6.3V Sanyo C18Capacitor, Electrolytic 16MV150GX, 150m F, 6.3V Sanyo R1,13,14Resistor44.7V , 5%, 120615R2Resistor 175V , 1%, 0603R3,6,7,8Resistor 4100V , 1%, 0603R4, 18Resistor 2See Table 2, dual layout component 0603 3 2R5Resistor 119.1V , 1%, 0603R9Resistor 1 1.5K V , 5%, 0603R10Resistor 110V , 5%, 1206R11Resistor 10V , 0603R12Resistor 1 3.3K V , 5%, 0603R16,17,21Resistor3 2.2K V , 1%, 0603R19Resistor 1220K V , 1%, 0603R22Resistor110V , 5%, 0603IRU3007 APPLICATION PARTS LISTDual Layout with HIP6019APPLICATION INFORMATIONAn example of how to calculate the components for the application circuit is given below.Assuming, two set of output conditions that this regula-tor must meet for Vcore:Also, the on-board 3.3V supply must be able to provide 10A load current and maintain less than ±5% total out-put voltage variation.The regulator design will be done such that it meets the worst case requirement of each condition.Output Capacitor Selection VcoreThe first step is to select the output capacitor. This is done primarily by selecting the maximum ESR value that meets the transient voltage budget of the total D Vo specification. Assuming that the regulators DC initial accuracy plus the output ripple is 2% of the output volt-age, then the maximum ESR of the output capacitor is calculated as:The Sanyo MVGX series is a good choice to achieve both the price and performance goals. The 6MV1500GX,1500m F, 6.3V has an ESR of less than 36m V typical.Selecting 6 of these capacitors in parallel has an ESR of ≈ 6m V which achieves our low ESR goal.Other type of Electrolytic capacitors from other manu-facturers to consider are the Panasonic FA series or the Nichicon PL series.3.3V supplyFor the 3.3V supply, since there is not a fast transient requirement, 2 of the 1500m F capacitors is sufficient.Reducing the Output Capacitors Using Voltage Level Shifting TechniqueThe trace resistance or an external resistor from the output of the switching regulator to the Slot 1 can be used to the circuit advantage and possibly reduce the number of output capacitors, by level shifting the DC regulation point when transitioning from light load to full load and vice versa. To accomplish this, the output of the regulator is typically set about half the DC drop that results fromlight load to full load. For example, if the total resistance from the output capacitors to the Slot 1 and back to the Gnd pin of the IRU3007 is 5m V and if the total D I, the change from light load to full load is 14A, then the output voltage measured at the top of the resistor divider which is also connected to the output capacitors in this case,must be set at half of the 70mV or 35mV higher than the DAC voltage setting. This intentional voltage level shift-ing during the load transient eases the requirement for the output capacitor ESR at the cost of load regulation.One can show that the new ESR requirement eases up by half the total trace resistance. For example, if the ESR requirement of the output capacitors without volt-age level shifting must be 7m V then after level shifting the new ESR will only need to be 8.5m V if the trace resistance is 5m V (7+5/2=9.5). However, one must be careful that the combined “voltage level shifting” and the transient response is still within the maximum tolerance of the Intel specification. To insure this, the maximum trace resistance must be less than:Where :Rs = Total maximum trace resistance allowed Vspec = Intel total voltage spec Vo = Output voltageD Vo = Output ripple voltage D I = load current stepFor example, assuming:Vspec = ±140mV = ±0.1V for 2V output Vo = 2VD Vo = assume 10mV = 0.01V D I = 14.2A Then the Rs is calculated to be:However, if a resistor of this value is used, the maximum power dissipated in the trace (or if an external resistor is being used) must also be considered. For example if Rs=12.6m V , the power dissipated is:This is a lot of power to be dissipated in a system. So, if the Rs=5m V , then the power dissipated is about 1W,which is much more acceptable. If level shifting is not implemented, then the maximum output capacitor ESR was shown previously to be 7m V which translated to ≈ 6a) Vo=2.8V , Io=14.2A, D Vo=185mV, D Io=14.2A b) Vo=2V , Io=14.2A, D Vo=140mV, D Io=14.2A ESR [ = 7m V10014.2Io 23Rs = 14.22312.6 = 2.54WRs ≤ 2 3 = 12.6m V(0.140 - 0.02 3 2 - 0.01)Rs [ 2 3(Vspec - 0.02 3 Vo - D Vo)D IT ≡ Switching Period D ≡ Duty CycleVsw ≡ High-side MOSFET ON Voltage R DS ≡ MOSFET On-ResistanceVsync ≡ Synchronous MOSFET ON Voltage D Ir ≡ Inductor Ripple Current D Vo ≡Output Ripple VoltageT = 1 / 200000 = 5m sVsw = Vsync = 14.230.019 = 0.27V D ≈ (2.8 + 0.27) / (5 - 0.27 + 0.27) = 0.61T ON = 0.6135 = 3.1m s T OFF = 5 - 3.1 = 1.9m sD Ir = (2.8 + 0.27)31.9 / 3 = 1.94A D Vo = 1.9430.006 = 0.011V = 11mVVf = 0.5VD MAX ≈ (3.3 + 0.5) / (4.75 - 0.27 + 0.5) = 0.76of the 1500m F, 6MV1500GX type Sanyo capacitors. With Rs=5m V , the maximum ESR becomes 9.5m V which is equivalent to ≈ 4 caps. Another important consideration is that if a trace is being used to implement the resistor,the power dissipated by the trace increases the case temperature of the output capacitors which could seri-ously affect the life span of the output capacitors.Output Inductor SelectionThe output inductance must be selected such that un-der low line and the maximum output voltage condition,the inductor current slope times the output capacitor ESR is ramping up faster than the capacitor voltage is drooping during a load current step. However, if the in-ductor is made too small, the output ripple current and ripple voltage will become too large. One solution to bring the ripple current down is to increase the switching fre-quency, however that will be at the cost of reduced effi-ciency and higher system cost. The following set of for-mulas are derived to achieve optimum performance with-out many design iterations.The maximum output inductance is calculated using the following equation:Where:V IN(MIN) = Minimum input voltageFor Vo = 2.8V and D I = 14.2A, we get:Assuming that the programmed switching frequency is set at 200KHz, an inductor is designed using the Micrometals’ powder iron core material. The summary of the design is outlined below:The selected core material is Powder Iron, the selected core is T50-52D from Micro Metal wound with 8 turns of #16 AWG wire, resulting in 3m H inductance with ≈ 3 m V of DC resistance.Assuming L=3m H and Fsw=200KHz (switching fre-quency), the inductor ripple current and the output ripple voltage is calculated using the following set of equations:L = ESR 3 C 3(V IN(MIN) - Vo (MAX))(2 3 D I)(4.75 - 2.8)(2 3 14.2)L = 0.006 3 9000 3 = 3.7m HIn our example for Vo = 2.8V and 14.2 A load, assuming IRL3103 MOSFET for both switches with maximum on r e s i s t a n c e o f 19m V , we have:Power Component Selection VcoreAssuming IRL3103 MOSFETs as power components,we will calculate the maximum power dissipation as fol-lows:For high side switch the maximum power dissipation happens at maximum Vo and maximum duty cycle.R DS(MAX)=Maximum R DS(ON) of the MOSFET at 1258C For synch MOSFET, maximum power dissipation hap-pens at minimum Vo and minimum duty cycle.3.3V SupplyAgain, for high side switch the maximum power dissipa-tion happens at maximum Vo and maximum duty cycle.The duty cycle equation for non synchronous replaces the forward voltage of the diode with the Synch MOSFET on voltage. In equations below:T = 1 / FswVsw = Vsync = Io 3R DSD ≈ (Vo + Vsync) / (V IN - Vsw + Vsync)T ON = D 3T T OFF = T - T OND Ir = (Vo + Vsync)3T OFF / L D Vo = D Ir 3ESRD MAX ≈ (2.8 + 0.27) / (4.75 - 0.27 + 0.27) = 0.65P DH = D MAX 3Io 23R DS(MAX)P DH = 0.65314.2230.029 = 3.8WD MIN ≈ (2 + 0.27) / (5.25 - 0.27 + 0.27) = 0.43P DS = (1 - D MIN )3Io 23R DS(MAX)P DS = (1 - 0.43)314.22 30.029 = 3.33WD MIN ≈ (3.3 + 0.5) / (5.25 - 0.27 + 0.5) = 0.69P DD = (1 - D MIN )3Io 3VfP DD = (1 - 0.69)31030.5 = 1.55WFor Vo = 1.5V, V IN = 3.3V and I L = 2A:R DS(MAX) = (V IN - Vo) / I L = (3.3 - 1.5) / 2 = 0.9V Vcs = I CL 3R DS = 2230.019 = 0.418V Rcs = Vcs / I B = (0.418V) / (200m A) = 2.1K V P DH = D MAX 3Io 23R DS(MAX)P DH = 0.76310230.029 = 2.21WR DS(MAX) = Maximum R DS(ON) of the MOSFET at 1258C For diode, the maximum power dissipation happens at minimum Vo and minimum duty cycle.Switcher Current Limit ProtectionThe IRU3007 uses the MOSFET R DS(ON) as the sensing resistor to sense the MOSFET current and compares to a programmed voltage which is set externally via a re-sistor (Rcs) placed between the drain of the MOSFET and the “CS+” terminal of the IC as shown in the appli-cation circuit.For example, if the desired current limit point is set to be 22A for the synchronous and 16A for the non syn-chronous, and from our previous selection, the maxi-mum MOSFET R DS(ON)=19mW, then the current sense resistor Rcs is calculated as:VcoreWhere:I B =200m A is the internal current setting of the IRU30073.3V supply1.5V, GTL+ Supply LDO Power MOSFET Selection The first step in selecting the power MOSFET for the 1.5V linear regulator is to select its maximum R DS(ON) of the pass transistor based on the input to output Dropout voltage and the maximum load current.Note: Since the MOSFETs R DS(ON) increases with tem-perature, this number must be divided by ≈ 1.5, in order to find the R DS(ON) max at room temperature. The Motorola MTP3055VL has a maximum of 0.18V R DS(ON) at room temperature, which meets our requirement.To select the heat sink for the LDO MOSFET the first step is to calculate the maximum power dissipation of the device and then follow the same procedure as for the switcher.Where:P D = Power Dissipation of the Linear Regulator I L = Linear Regulator Load Current For the 1.5V and 2A load:Assuming T J(MAX) = 1258C:With the maximum heat sink temperature calculated in the previous step, the heat-sink-to-air thermal resistance (u SA ) is calculated as follows:Assuming T A = 358C:The same heat sink as the one selected for the switcher MOSFETs is also suitable for the 1.5V regulator.2.5V Clock SupplyThe IRU3007 provides a complete 2.5V regulator with a minimum of 200mA current capability. The internal regu-lator has short circuit protection with internal thermal shutdown.1.5V and2.5V Supply Resistor Divider Selection Since the internal voltage reference for the linear regula-tors is set at 1.26V for IRU3007, there is a need to use external resistor dividers to step up the voltage. The re-sistor dividers are selected using the following equations:Where:Rt = Top resistor divider R B = Bottom resistor divider V REF = 1.26V typical For 1.5V supplyAssuming R B = 1K V :Vcs = I CL 3R DS = 1630.019 = 0.3V Rcs = Vcs / I B = (0.3V) / (200m A) = 1.50K V Rt = R B 3[(Vo / V REF ) - 1]Rt = 13[(1.5 / 1.26) - 1] = 191VVo = (1 + Rt / R B )3V REF D T = Ts - T A = 118 - 35 = 838C Temperature Rise Above Ambientu SA = D T / P D = 83 / 3.6 = 238C/WP D = (V IN - Vo)3I LP D = (3.3 - 1.5)32 = 3.6W Ts = T J - P D 3(u JC + u cs)Ts = 125 - 3.63(1.8 + 0.05) = 1188CFor 2.5V supplyAssuming R B = 1.02K V :Switcher Output Voltage Adjust VcoreAs it was discussed earlier, the trace resistance from the output of the switching regulator to the Slot 1 can be used to the circuit advantage and possibly reduce the number of output capacitors, by level shifting the DC regulation point when transitioning from light load to full load and vice versa. To account for the DC drop, the output of the regulator is typically set about half the DC drop that results from light load to full load. For example,if the total resistance from the output capacitors to the Slot 1 and back to the Gnd pin of the IRU3007 is 5m V and if the total D I, the change from light load to full load is 14A, then the output voltage measured at the top of the resistor divider which is also connected to the out-put capacitors in this case, must be set at half of the 70mV or 35mV higher than the DAC voltage setting. To do this, the top resistor of the resistor divider (R12 in the application circuit) is set at 100V , and the R19 is calcu-lated. For example, if DAC voltage setting is for 2.8V and the desired output under light load is 2.835V, then R19 is calculated using the following formula:Note: The value of the top resistor must not exceed 100V .The bottom resistor can then be adjusted to raise the output voltage.3.3V supplyThe loop gain for the non-synchronous switching regula-tor is intentionally set low to take advantage of the level shifting technique to reduce the number of output ca-pacitors. Typically there is a 1% drop in the output volt-age from light load (discontinuous conduction mode) to full load (continuous conduction mode) in the 3.3V sup-ply. To account for this, the output voltage is set at 3.5V typically. The same procedure as for the synchronous is applied to the non-synch with the exception that the in-ternal voltage reference of this regulator is internally set at 2V. The following is the set of equations to use for the output voltage setting for the non-synchronous assum-ing the Vo=3.5V and R2=75V (R2 is the top resistor in the application circuit).Rt = R B 3[(Vo / V REF ) - 1]Rt = 1.023[(2.5 / 1.26) - 1] = 1K VR19 = 1003[V DAC / (Vo - 1.0043V DAC )] (V )R19 = 1003[2.8 / (2.835 - 1.00432.800)] = 11.76K V Select 11.8K V , 1%I = 9000m F 3 (1V / 100ms) = 0.09AR3 = R23[2 / (Vo - 2)] (V )R3 = 753[2 / (3.5 - 2)] = 100V , 1%The bottom resistor, R3 is calculated as follows:Note: The value of the top resistor, R2 must not exceed 100V .Soft-Start Capacitor SelectionThe soft-start capacitor must be selected such that dur-ing the start up when the output capacitors are charging up, the peak inductor current does not reach the current limit threshold. A minimum of 1m F capacitor insures this for most applications. An internal 10m A current source charges the soft-start capacitor which slowly ramps up the inverting input of the PWM comparator Vfb3. This insures the output voltage to ramp at the same rate as the soft-start cap thereby limiting the input current. For example, with 1m F and the 10m A internal current source the ramp up rate is (D V/D t)=I/C=1V/100ms. Assuming that the output capacitance is 9000m F, the maximum start up current will be:Input FilterIt is highly recommended to place an inductor between the system 5V supply and the input capacitors of the switching regulator to isolate the 5V supply from the switching noise that occurs during the turn on and off of the switching components. Typically an inductor in the range of 1 to 3m H will be sufficient in this type of appli-cation.External ShutdownThe best way to shutdown the IRU3007 is to pull down on the soft-start pin using an external small signal tran-sistor such as 2N3904 or 2N7002 small signal MOSFET.This allows slow ramp up of the output, the same as the power up.Layout ConsiderationsSwitching regulators require careful attention to the lay-out of the components, specifically power components since they switch large currents. These switching com-ponents can create large amount of voltage spikes and high frequency harmonics if some of the critical compo-nents are far away from each other and are connected with inductive traces. The following is a guideline of how to place the critical components and the connections between them in order to minimize the above issues.。

IR公司_大功率MOS管选型

IR公司_大功率MOS管选型

I DContinuous Drain Current(A)70°Micro3Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPartNumberPD Max.PowerDissipation (W)N-ChannelLogic LevelIRLML2402*912570.54200.25 1.20.95230H1IRLML2803912580.54300.251.20.93230P-ChannelLogic LevelIRLML6302*912590.54-200.6-0.62-4.8230H1IRLML5103912600.54-300.6-0.61-4.8230* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°Micro6Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPartNumberPD Max.PowerDissipation (W)N-ChannelLogic LevelIRLMS1902915401.7200.10 3.2 2.675H2IRLMS1503915081.7300.103.22.675P-ChannelLogic LevelIRLMS6702*914141.7-200.20-2.3-1.975H2IRLMS5703914131.7-300.20-2.3-1.975* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°Micro8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRF7601* 912611.820 0.035 5.7 4.6 70 H3IRF7603 912621.830 0.035 5.6 4.5 70Dual N-Channel Logic LevelIRF7501* 912651.220 0.135 2.4 1.9 100 H3IRF7503 912661.2530 0.135 2.4 1.9 100P-Channel Logic LevelIRF7604* 912631.8-20 0.09 -3.6 -2.9 70 H3IRF7606 912641.8-30 0.09 -3.6 -2.9 70Dual P-Channel Logic LevelIRF7504* 912671.25-20 0.27 -1.7 -1.4 100 H3IRF7506 912681.25-30 0.27 -1.7 -1.4 100Dual N- and P-Channel Logic LevelIRF7507* 912691.2520 0.1352.4 1.9 100 H3-20 0.27 -1.7 -1.4IRF7509 912701.2530 0.135 2.4 1.9 100-30 0.27 -1.7 -1.4* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRF7413913302.5300.011139.250H4IRF7413A 916132.5300.0135128.450IRF9410915622.5300.0375.850Dual N-ChannelIRF7311914352.0200.029 6.6 5.362.5H4IRF7313914802.0300.029 6.5 5.262.5IRF7333917002.0300.10 3.5 2.862.5917002.0300.050 4.9 3.962.5IRF9956915592.0300.103.52.862.5Dual P-ChannelIRF7314914352.0-200.058-5.3-4.362.5H4IRF7316915052.0-300.058-4.9-3.962.5IRF9953915602.0-300.25-2.3-1.862.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)RΘMax.ThermalResistance(°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)Dual N- and P-ChannelIRF7317 915682.020 0.029 6.6 5.3 62.5 H42.0-20 0.058 -5.3 -4.3 62.5IRF9952 915622.030 0.103.5 2.8 62.5915622.0-30 0.25 -2.3 -1.8 62.5IRF7319 916062.030 0.029 6.5 5.2 62.52.0-30 0.058 -4.9 -3.9 62.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRF7401912442.5200.0228.77.050H4IRF7201911002.5300.0307.0 5.650IRF7403912452.5300.0228.55.450Dual N-ChannelLogic LevelIRF7101908712.0200.10 3.5 2.362.5H4IRF7301912382.0200.050 5.2 4.162.5IRF7303912392.0300.050 4.9 3.962.5IRF7103910952.0500.1303.02.362.5P-ChannelLogic LevelIRF7204911032.5-200.060-5.3-4.250H4IRF7404912462.5-200.040-6.7-5.450IRF7205911042.5-300.070-4.6-3.750IRF7406912472.5-300.045-5.8-3.750IRF7416913562.5-300.02-10-7.150* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)Dual P-ChannelLogic LevelIRF7104910962.0-200.250-2.3-1.862.5H4IRF7304912402.0-200.090-4.3-3.462.5IRF7306912412.0-300.10-3.6-2.962.5Dual N- and P-Channe Logic LevelIRF7307912421.4200.050 4.3 3.490H4-200.090-3.6-2.9IRF7105910972.0250.1093.5 2.862.52-250.25-2.3-1.862IRF7309912432.0300.050 4.9 3.962.5-300.10-3.6-2.9* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SOT-223Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFL4105913812.1550.045 3.7 3.060H6IRFL110908612.01000.54 1.50.9660IRFL4310913682.11000.20 1.6 1.360IRFL21090868 2.02001.50.960.660IRFL214908622.02502.00.790.560P-ChannelIRFL9110908642.0-1001.2-1.1-0.6960H6N-ChannelLogic LevelIRLL3303913792.1300.031 4.6 3.760H6IRLL014N 914992.1550.14 2.0 1.660IRLL2705913802.1550.043.83.060* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFR33039164257300.0313321 2.2H7IRFR024N9133638550.0751610 3.3IRFR41059130248550.0452516 2.7IRFR12059131869550.0273723 1.8IRFR11090524251000.54 4.3 2.75IRFR120N 91365391000.219.1 5.8 3.2IRFR391091364521000.11159.5 2.4IRFR2109052625200 1.5 2.6 1.75IRFR22090525422000.8 4.833IRFR21490703252502 2.2 1.45IRFR2249060042250 1.1 3.8 2.43IRFR3109059725400 3.6 1.7 1.15IRFR3209059842400 1.8 3.123IRFR42090599425003 2.4 1.53IRFRC2090637426004.421.33* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)P-ChannelIRFR55059161057-550.11-18-11 2.2H7IRFR53059140289-550.065-28-18 1.4IRFR90149065425-600.5-5.1-3.25IRFR90249065542-600.28-8.8-5.63IRFR91109051925-100 1.2-3.1-25IRFR91209052042-1000.6-5.6-3.63IRFR9120N 9150739-1000.48-6.5-4.1 3.2IRFR92109052125-2003-1.9-1.25IRFR92209052242-200 1.5-3.6-2.33IRFR92149165850-250 3.0-2.7-1.7 2.5IRFR93109166350-4007.0-1.8-1.12.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRLR27039133538300.0452214 3.3H7IRLR33039131657300.0313321 2.2IRLR31039133369300.0194629 1.8IRLR024N 9136338550.0651711 3.3IRLR27059131746550.042415 2.7IRLR29059133469550.0273623 1.8IRLR120N 91541391000.18511 6.9 3.2IRLR341091607521000.10159.52.4* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-ChannelIRFZ24NS 913554555 0.07 17 12 3.3 H10IRFZ34NS 913116855 0.04 29 20 2.2IRFZ44NS 9131511055 0.022 49 35 1.4IRFZ46NS 9130512055 0.020 53 37 1.3IRFZ48NS 9140814055 0.016 64 45 1.1IRF1010NS 913723.855 0.011 84 60 40IRF3205S 9130420055 0.008 110 80 0.75IRFZ44ES 9171411060 0.023 48 34 1.4IRF1010ES 9172017060 0.012 83 59 0.90IRF2807S 9151815075 0.013 71 50 1.0IRF520NS 9134047100 0.2 9.5 6.7 3.2IRF530NS 9135263100 0.11 15 11 2.4IRF540NS 91342110100 0.052 27 19 1.6IRF1310NS 91514120100 0.036 36 25 1.3IRF3710S 91310150100 0.028 46 33 1.0IRF3315S 9161794150 0.082 21 15 1.6IRF3415S 91509150150 0.042 37 26 1.0IRFBC20S 9.101450600 4.4 2.2 1.4 2.5IRFBC30S 9101574600 2.2 3.6 2.3 1.7IRFBC40S 91016130600 1.2 6.2 3.9 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemandNumberCase Outline KeyPart NumberP D Max.PowerDissipation (W)IRFBF20S 9166554900 8.0 1.7 1.1 2.3 H10P-ChannelIRF5305S 91386110-55 0.06 -31 -22 1.4 H10IRF4905S 914783.8-55 0.02 -74 -52 40IRF9520NS 9152247-100 0.48 -6.7 -4.8 3.2IRF9530NS 9152375-100 0.20 -14 -9.9 2.0IRF9540NS 9148394-100 0.117 -19 -13 1.6IRF5210S 91405150-100 0.06 -35 -25 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRL3302S 916925720 0.020 39 25 2.2 H10IRL3202S916756920 0.016 48 30 1.8IRL3102S 916918920 0.013 61 39 1.4IRL3402S 9169311020 0.01 85 54 1.1IRL3502S 9167614020 0.007 110 67 0.89IRL2703S 913604530 0.04 24 17 3.3IRL3303S 913236830 0.026 38 27 2.2IRL3103S 9133811030 0.014 64 45 1.4IRL2203NS 9136717030 0.007 116 82 0.90IRL3803S 9131920030 0.006 140 98 0.75IRLZ24NS 913584555 0.06 18 13 3.3IRLZ34NS 913086855 0.035 30 21 2.2IRLZ44NS 9134711055 0.022 47 33 1.4IRL3705NS 9150217055 0.01 89 63 0.90IRL2505S 9132620055 0.008 104 74 0.75IRLZ44S 9090615060 0.028 50 36 1.0IRL530NS 9134963100 0.1 15 11 2.4IRL2910S 91376150100 0.026 48 34 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°SOT-227Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous DrainCurrent 25°C(A)RΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelFully Isolated Low ChargeFA38SA50LC 916155005000.1338240.25H21FA57SA50LC916506255000.0857360.20* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°I-PakThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFU33039164257300.0313321 2.2H8IRFU024N 9133638550.0751610 3.3IRFU41059130248550.0452519 2.7IRFU12059131869550.0273723 1.8IRFU11090524251000.54 4.3 2.7 5.0IRFU120N 91365391000.219.1 5.8 3.2IRFU391091364521000.11159.5 2.4IRFU2109052625200 1.5 2.6 1.7 5.0IRFU22090525422000.80 4.8 3.0 3.0IRFU2149070325250 2.0 2.2 1.4 5.0IRFU2249060042250 1.1 3.8 2.4 3.0IRFU3109059725400 3.6 1.7 1.1 5.0IRFU3209059842400 1.8 3.1 2.0 3.0IRFU4209059942500 3.0 2.4 1.5 3.0IRFUC2090637426004.42.01.33.0I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°I-PakThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)P-ChannelIRFU55059161057-550.11-18-11 2.2H8IRFU53059140289-550.065-28-18 1.4IRFU90149065425-600.50-5.1-3.2 5.0IRFU90249065542-600.28-8.8-5.6 3.0IRFU91109051925-100 1.2-3.1-2.0 5.0IRFU91209052042-1000.60-5.6-3.6 3.0IRFU9120N 9150739-1000.48-6.5-4.1 3.2IRFU92109052125-200 3.0-1.9-1.2 5.0IRFU92209052242-200 1.5-3.6-2.3 3.0IRFU92149165850-2503.0-2.7-1.7 2.5IRFU93109166350-4007.0-1.8-1.12.5N-ChannelLogic LevelIRLU27039133538300.0452214 3.3H8IRLU33039131657300.0313321 2.2IRLU31039133369300.0194629 1.8IRLU024N 9136338550.0651711 3.3IRLU27059131746550.04241715IRLU29059133469550.0273623 1.8IRLU120N 91541391000.18511 6.9 3.2IRLU341091607521000.10159.52.4I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°HEXDIPThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFD014907001.3600.2 1.7 1.2120H9IRFD024906991.3600.1 2.5 1.8120IRFD110903281.31000.54 1.00.71120IRFD120903851.31000.27 1.30.94120IRFD210903861.3200 1.50.60.38120IRFD220904171.32000.80.80.50120IRFD214912711.3250 2.00.570.32120IRFD224912721.3250 1.10.760.43120IRFD310912251.3400 3.60.420.23120IRFD320912261.3400 1.80.600.33120IRFD420912271.3500 3.00.460.26120IRFDC20912281.36004.40.320.21120I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-220Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C (A)R ΘMax.Thermal Resistance(°C/W)1Faxon Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)N-ChannelLow ChargeIRF737LC91314743000.75 6.1** 1.7 3.9H11IRF740LC 910681254000.5510** 1.039IRF840LC 910691255000.858.0** 1.039IRFBC40LC910701256001.26.2**1.039I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFZ24N 9135445550.071712 3.3H12IRFZ34N9127656550.042618 2.7IRFZ44N 9130383550.0244129 1.8IRFZ46N 9127788550.024633 1.7IRFZ48N 9140694550.0165337 1.6IRF1010N 91278130550.0127251 1.2IRF320591279150550.0089869 1.0IRFZ34E 9167268600.0422820 2.2IRFZ44E 91671110600.0234834 1.4IRF1010E 91670170600.01281570.90IRF280791517150750.0137150 1.0IRF520N 91339471000.209.5 6.79.5IRF530N 91351601000.111511 2.4IRF540N 91341941000.0522719 1.6IRF1310N 916111201000.0363625 1.3IRF3710913091501000.0284633 1.0IRF331591623941500.0822115 1.6IRF3415914771501500.0423726 1.0IRFBC209062350600 4.4 2.2 1.4 2.5IRFBC309048274600 2.2 3.6 2.3 1.7IRFBC4090506125600 1.2 6.2 3.9 1.0IRFBE2090610548006.51.81.22.3I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)IRFBE3090613125800 3.0 4.1 2.6 2.0H12IRFBF3090616125900 3.7 3.6 2.3 1.0IRFBG209060454100011 1.40.86 2.3IRFBG309062012510005.03.12.01.0P-ChannelIRF9Z24N 9148445-550.175-12-8.53.3H12IRF9Z34N 9148556-550.10-17-12 2.7IRF530591385110-550.06-31-22 1.4IRF490591280150-550.02-64-45 1.0IRF9530N 9148275-1000.20-13-9.2 2.0IRF9540N 9143794-1000.117-19-13 1.6IRF521091434150-1000.06-35-25 1.0IRF62159147983-1500.29-11-7.81.8I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRL3302 916965720 0.020 39 25 2.2 H12IRL3202 916956920 0.016 48 30 1.8IRL3102 916948920 0.013 61 39 1.4IRL3402 9169711020 0.01 85 54 1.1IRL3502 9169814020 0.007 110 67 0.89IRL2703 913594530 0.04 24 17 3.3IRL3303 913225630 0.026 34 24 2.7IRL3103 913378330 0.014 56 40 1.8IRL2203N 9136613030 0.007 100 71 1.230 0.007 61 43 3.2IRL3803 9130115030 0.006 120 83 1.0IRLZ24N 913574555 0.06 18 13 3.3IRLZ34N 913075655 0.035 27 19 2.7IRLZ44N 913468355 0.022 41 29 1.8IRL3705N 9137013055 0.01 77 54 1.2IRL2505 9132520055 0.008 104 74 0.75IRL520N 9149447100 0.18 10 7.1 3.2IRL530N 9134863100 0.10 15 11 2.4IRL540N 9149594100 0.044 30 21 1.6IRL2910 91375150100 0.026 48 34 1.0I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-220 FullPak (Fully Isolated)Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous DrainCurrent 25°C(A)R ΘMax.Thermal Resistance (°C/W)1Fax on Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)N-ChannelLow ChargeIRFI740GLC91209404000.55 6.0** 3.139H13IRFI840GLC 91208405000.85 4.8** 3.139IRFIBC40GLC91211406001.24.0**3.139I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFIZ24N 9150126550.07139.2 5.8H14IRFIZ34N9148931550.041913 4.8IRFIZ44N 9140338550.02428200.024IRFIZ46N 9130640550.023122 3.8IRFIZ48N 9140742550.0163625 3.6IRFI1010N 9137347550.0124431 3.2IRFI32059137448550.0085640 3.1IRFIZ24E 9167329600.071149.6 5.2IRFIZ34E 9167437600.0422115 4.1IRFI510G 90829271000.54 4.5 3.2 5.5IRFI520N 91362271000.207.2 5.1 5.5IRFI530N 91353331000.11117.8 4.5IRFI540N 91361421000.0521813 3.6IRFI1310N 91611451000.0362216 3.3IRFI371091387481000.0252820 3.1IRFI620G 90832302000.8 4.1 2.6 4.1IRFI630G 90652322000.4 5.9 3.7 3.6IRFI640G 90649402000.189.8 6.2 3.1IRFI614G 9083123250 2.0 2.1 1.3 5.5IRFI624G 9083330250 1.1 3.4 2.2 4.1IRFI634G 90738322500.45 5.6 3.5 3.6IRFI644G 90739402500.287.953.1I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)IRFI720G 9083430400 1.8 2.6 1.7 4.1H14IRFI730G 9065032400 1.0 3.7 2.3 3.6IRFI740G 90651404000.55 5.4 3.4 3.1IRFI734G 9100135450 1.2 3.4 2.1 3.6IRFI744G 91002404500.63 4.9 3.1 3.1IRFI820G 9064130500 3.0 2.1 1.3 4.1IRFI830G 9064632500 1.5 3.12 3.6IRFI840G 90642405000.85 4.6 2.9 3.1IRFIBC20G 90850306004.41.71.1 4.1IRFIBC30G 90851356002.2 2.5 1.63.6IRFIBC40G 9085240600 1.2 3.5 2.2 3.1IRFIBE20G 9085330800 6.5 1.4.86 4.1IRFIBE30G 9085435800 3.0 2.1 1.4 3.6IRFIBF20G 90855309008.0 1.2.79 4.1IRFIBF30G90856359003.71.91.23.6P-ChannelIRFI9Z24N 9152929-550.175-9.5-6.7 5.2H14IRFI9Z34N 9153037-550.10-14-10 4.1IRFI49059152663-550.02-41-29 2.4IRFI9540G 9083742-1000.117-13-9.2 3.6IRFI9540N 9148742-1000.117-13-9.2 3.6IRFI52109140448-1000.06-20-14 3.1IRFI9634G 9148835-2501.0-4.1-2.63.6I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRLI2203N 9137847300.0076143 3.2H14IRLI38039132048300.0066747 3.1IRLIZ24N 9134426550.06149.9 5.8IRLIZ34N 9132931550.0352014 4.8IRLIZ44N 9149838550.0222820 4.0IRLI3705N 9136947550.014733 3.2IRLI25059132763550.00858412.4IRLI520N 91496271000.187.7 5.4 5.5IRLI530N 91350331000.10117.8 4.5IRLI540N 91497421000.04420143.6IRLI291091384481000.02627193.1P-ChannelLogic LevelIRFI9520G 9083537-1000.6-5.2-3.6 4.1H14IRFI9530G 9083638-1000.03-7.7-5.4 3.6IRFI9620G 9087430-200 1.5-3.0-1.9 4.1IRFI9630G 9083840-2000.8-4.3-2.7 3.6IRFI9640G9083940-2000.5-6.1-3.93.1I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-247Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C (A)R ΘMax.Thermal Resistance (°C/W)1Fax on Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)1N-ChannelLow ChargeIRFP350LC912291904000.3018**0.6570H16IRFP360LC 912302804000.2023**0.4598IRFP450LC 912311905000.4016**0.6570IRFP460LC 912322805000.2720**0.4598IRFPC50LC 912331906000.6013**0.6570IRFPC60LC912342806000.4016**0.4598I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not rated。

IRFR024NTRR中文资料

IRFR024NTRR中文资料

IRFR/U024NPRELIMINARYHEXFET ®Power MOSFETParameterTyp.Max.UnitsR θJC Junction-to-Case––– 3.3R θJA Case-to-Ambient (PCB mount)**–––50°C/WR θJAJunction-to-Ambient–––110Thermal ResistanceDescription 1D -P ak T O -252A AI-P ak TO -251AAl Ultra Low On-Resistance l Surface Mount (IRFR024N)l Straight Lead (IRFU024N)l Advanced Process Technology l Fast SwitchinglFully Avalanche RatedFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,provides the designer with an extremely efficient device for use in a wide variety of applications.The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.** When mounted on 1" square PCB (FR-4 or G-10 Material ) .For recommended footprint and soldering techniques refer to application note #AN-994ParameterMax.UnitsI D @ T C = 25°C Continuous Drain Current, V GS @ 10V 17I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 12A I DMPulsed Drain Current 68P D @T C = 25°C Power Dissipation 45W Linear Derating Factor 0.30W/°C V GS Gate-to-Source Voltage± 20V E AS Single Pulse Avalanche Energy 71mJ I AR Avalanche Current10A E AR Repetitive Avalanche Energy 4.5mJ dv/dt Peak Diode Recovery dv/dt 5.0V/ns T J Operating Junction and-55 to + 175T STGStorage Temperature RangeSoldering Temperature, for 10 seconds300 (1.6mm from case )°CAbsolute Maximum RatingsPD- 9.1336AIRFR/U024NIRFR/U024NIRFR/U024NIRFR/U024NIRFR/U024NIRFR/U024NIRFR/U024NIRFR/U024NIRFR/U024N元器件交易网Note: For the most current drawings please refer to the IR website at:/package/。

常用MOS管型号参数

常用MOS管型号参数

场效应管分类型号简介封装DISCRETEMOS FET 2N7000 60V,0.115A TO-92 DISCRETEMOS FET 2N7002 60V,0.2A SOT-23 DISCRETEMOS FET IRF510A 100V,5.6A TO-220 DISCRETEMOS FET IRF520A 100V,9.2A TO-220 DISCRETEMOS FET IRF530A 100V,14A TO-220 DISCRETEMOS FET IRF540A 100V,28A TO-220 DISCRETEMOS FET IRF610A 200V,3.3A TO-220 DISCRETEMOS FET IRF620A 200V,5A TO-220 DISCRETEMOS FET IRF630A 200V,9A TO-220 DISCRETEMOS FET IRF634A 250V,8.1A TO-220 DISCRETEMOS FET IRF640A 200V,18A TO-220 DISCRETEMOS FET IRF644A 250V,14A TO-220 DISCRETEMOS FET IRF650A 200V,28A TO-220 DISCRETEMOS FET IRF654A 250V,21A TO-220 DISCRETEMOS FET IRF720A 400V,3.3A TO-220 DISCRETEMOS FET IRF730A 400V,5.5A TO-220 DISCRETEMOS FET IRF740A 400V,10A TO-220 DISCRETEMOS FET IRF750A 400V,15A TO-220 DISCRETEMOS FET IRF820A 500V,2.5A TO-220 DISCRETEMOS FET IRF830A 500V,4.5A TO-220 DISCRETEMOS FET IRF840A 500V,8A TO-220 DISCRETEDISCRETEMOS FET IRF9540 -100V,-19A TO-220 DISCRETEMOS FET IRF9610 -200V,-1.8A TO-220 DISCRETEMOS FET IRF9620 -200V,-3.5A TO-220 DISCRETEMOS FET IRFP150A 100V,43A TO-3P DISCRETEMOS FET IRFP250A 200V,32A TO-3P DISCRETEMOS FET IRFP450A 500V,14A TO-3P DISCRETEMOS FET IRFR024A 60V,15A D-PAK DISCRETEMOS FET IRFR120A 100V,8.4A D-PAK DISCRETEMOS FET IRFR214A 250V,2.2A D-PAK DISCRETEMOS FET IRFR220A 200V,4.6A D-PAK DISCRETEMOS FET IRFR224A 250V,3.8A D-PAK DISCRETEMOS FET IRFR310A 400V,1.7A D-PAK DISCRETEMOS FET IRFR9020 -50V,-9.9A D-PAK DISCRETEMOS FET IRFS540A 100V,17A TO-220F DISCRETEMOS FET IRFS630A 200V,6.5A TO-220F DISCRETEMOS FET IRFS634A 250V,5.8A TO-220F DISCRETEMOS FET IRFS640A 200V,9.8A TO-220F DISCRETEMOS FET IRFS644A 250V,7.9A TO-220F DISCRETEMOS FET IRFS730A 400V,3.9A TO-220F DISCRETEMOS FET IRFS740A 400V,5.7A TO-220F DISCRETEMOS FET IRFS830A 500V,3.1A TO-220F DISCRETEDISCRETEMOS FET IRFS9Z34 -60V,-12A TO-220F DISCRETEMOS FET IRFSZ24A 60V,14A TO-220F DISCRETEMOS FET IRFSZ34A 60V,20A TO-220F DISCRETEMOS FET IRFU110A 100V,4.7A I-PAK DISCRETEMOS FET IRFU120A 100V,8.4A I-PAK DISCRETEMOS FET IRFU220A 200V,4.6A I-PAK DISCRETEMOS FET IRFU230A 200V,7.5A I-PAK DISCRETEMOS FET IRFU410A 500V ,1.2A I-PAK DISCRETEMOS FET IRFU420A 500V,2.3A I-PAK DISCRETEMOS FET IRFZ20A 50V,15A TO-220 DISCRETEMOS FET IRFZ24A 60V,17A TO-220 DISCRETEMOS FET IRFZ30 50V,30A TO-220 DISCRETEMOS FET IRFZ34A 60V,30A TO-220 DISCRETEMOS FET IRFZ40 50V,50A TO-220 DISCRETEMOS FET IRFZ44A 60V,50A TO-220 DISCRETEMOS FET IRLS530A 100V,10.7A,Logic TO-220F DISCRETEMOS FET IRLSZ14A 60V,8A,Logic TO-220F DISCRETEMOS FET IRLZ24A 60V,17A,Logic TO-220 DISCRETEMOS FET IRLZ44A 60V,50A,Logic TO-220 DISCRETEMOS FET SFP36N03 30V,36A TO-220 DISCRETEMOS FET SFP65N06 60V,65A TO-220 DISCRETEDISCRETEMOS FET SFP9634 -250V,-5A TO-220 DISCRETEMOS FET SFP9644 -250V,-8.6A TO-220 DISCRETEMOS FET SFP9Z34 -60V,-18A TO-220 DISCRETEMOS FET SFR9214 -250V,-1.53A D-PAK DISCRETEMOS FET SFR9224 -250V,-2.5A D-PAK DISCRETEMOS FET SFR9310 -400V,-1.5A D-PAK DISCRETEMOS FET SFS9630 -200V,-4.4A TO-220F DISCRETEMOS FET SFS9634 -250V,-3.4A TO-220F DISCRETEMOS FET SFU9220 -200V,-3.1A I-PAK DISCRETEMOS FET SSD2002 25V N/P Dual 8SOP DISCRETEMOS FET SSD2019 20V P-ch Dual 8SOP DISCRETEMOS FET SSD2101 30V N-ch Single 8SOP DISCRETEMOS FET SSH10N80A 800V,10A TO-3P DISCRETEMOS FET SSH10N90A 900V,10A TO-3P DISCRETEMOS FET SSH5N90A 900V,5A TO-3P DISCRETEMOS FET SSH60N10 100V,60A TO-3P DISCRETEMOS FET SSH6N80A 800V,6A TO-3P DISCRETEMOS FET SSH70N10A 100V,70A TO-3P DISCRETEMOS FET SSH7N90A 900V,7A TO-3P DISCRETEMOS FET SSH9N80A 800V,9A TO-3P DISCRETEMOS FET SSP10N60A 600V,9A TO-220 DISCRETEDISCRETEMOS FET SSP2N90A 900V,2A TO-220 DISCRETEMOS FET SSP35N03 30V,35A TO-220 DISCRETEMOS FET SSP3N90A 900V,3A TO-220 DISCRETEMOS FET SSP4N60A 600V,4A TO-220 DISCRETEMOS FET SSP4N60AS 600V,4A TO-220 DISCRETEMOS FET SSP4N90AS 900V,4.5A TO-220 DISCRETEMOS FET SSP5N90A 900V,5A TO-220 DISCRETEMOS FET SSP60N06 60V,60A TO-220 DISCRETEMOS FET SSP6N60A 600V,6A TO-220 DISCRETEMOS FET SSP70N10A 100V,55A TO-220 DISCRETEMOS FET SSP7N60A 600V,7A TO-220 DISCRETEMOS FET SSP7N80A 800V,7A TO-220 DISCRETEMOS FET SSP80N06A 60V,80A TO-220 DISCRETEMOS FET SSR1N60A 600V,0.9A D-PAK DISCRETEMOS FET SSR2N60A 600V,1.8A D-PAK DISCRETEMOS FET SSR3055A 60V,8A D-PAK DISCRETEMOS FET SSS10N60A 600V,5.1A TO-220F DISCRETEMOS FET SSS2N60A 600V,1.3A TO-220F DISCRETEMOS FET SSS3N80A 800V,2A TO-220F DISCRETEMOS FET SSS3N90A 900V,2A TO-220F DISCRETEMOS FET SSS4N60AS 600V,2.3A TO-220F DISCRETEDISCRETEMOS FET SSS5N80A 800V,3A TO-220F DISCRETEMOS FET SSS6N60 600V, 3.2A TO-220(F/P)。

常用全系列场效应管 MOS管型号参数封装资

常用全系列场效应管 MOS管型号参数封装资

场效应管分类型号简介封装DISCRETEMOS FET 2N7000 60V,0.115A TO-92 DISCRETEMOS FET 2N7002 60V,0.2A SOT-23 DISCRETEMOS FET IRF510A 100V,5.6A TO-220 DISCRETEMOS FET IRF520A 100V,9.2A TO-220 DISCRETEMOS FET IRF530A 100V,14A TO-220 DISCRETEMOS FET IRF540A 100V,28A TO-220 DISCRETEMOS FET IRF610A 200V,3.3A TO-220 DISCRETEMOS FET IRF620A 200V,5A TO-220 DISCRETEMOS FET IRF630A 200V,9A TO-220 DISCRETEMOS FET IRF634A 250V,8.1A TO-220 DISCRETEMOS FET IRF640A 200V,18A TO-220 DISCRETEMOS FET IRF644A 250V,14A TO-220 DISCRETEMOS FET IRF650A 200V,28A TO-220 DISCRETEMOS FET IRF654A 250V,21A TO-220 DISCRETEMOS FET IRF720A 400V,3.3A TO-220 DISCRETEMOS FET IRF730A 400V,5.5A TO-220 DISCRETEMOS FET IRF740A 400V,10A TO-220MOS FET IRF750A 400V,15A TO-220 DISCRETEMOS FET IRF820A 500V,2.5A TO-220 DISCRETEMOS FET IRF830A 500V,4.5A TO-220 DISCRETEMOS FET IRF840A 500V,8A TO-220 DISCRETEMOS FET IRF9520 TO-220 DISCRETEMOS FET IRF9540 TO-220 DISCRETEMOS FET IRF9610 TO-220 DISCRETEMOS FET IRF9620 TO-220IRF610 200V 3.3A 43WIRF820 500V 2.5A 50WIRF830 500V 4.5A 45WIRF840 500V 8A 125WIRF9620 200V 2A 40WIRFBC40R 600V 6.2A 125WIRFBC30 600V 3.6A 74WIRFPF50 900V 6.8A 150WIRFP450 500V 14A 180WDISCRETEMOS FET IRFP150A 100V,43A TO-3P DISCRETEMOS FET IRFP250A 200V,32A TO-3P DISCRETEMOS FET IRFP450A 500V,14A TO-3P DISCRETEMOS FET IRFR024A 60V,15A D-PAK DISCRETEMOS FET IRFR120A 100V,8.4A D-PAKMOS FET IRFR214A 250V,2.2A D-PAK DISCRETEMOS FET IRFR220A 200V,4.6A D-PAK DISCRETEMOS FET IRFR224A 250V,3.8A D-PAK DISCRETEMOS FET IRFR310A 400V,1.7A D-PAK DISCRETEMOS FET IRFR9020TF D-PAK DISCRETEMOS FET IRFS540A 100V,17A TO-220F DISCRETEMOS FET IRFS630A 200V,6.5A TO-220F DISCRETEMOS FET IRFS634A 250V,5.8A TO-220F DISCRETEMOS FET IRFS640A 200V,9.8A TO-220F DISCRETEMOS FET IRFS644A 250V,7.9A TO-220F DISCRETEMOS FET IRFS730A 400V,3.9A TO-220F DISCRETEMOS FET IRFS740A 400V,5.7A TO-220F DISCRETEMOS FET IRFS830A 500V,3.1A TO-220F DISCRETEMOS FET IRFS840A 500V,4.6A TO-220F DISCRETEMOS FET IRFS9Z34 -60V,12A TO-220F DISCRETEMOS FET IRFSZ24A 60V,14A TO-220F DISCRETEMOS FET IRFSZ34A 60V,20A TO-220FMOS FET IRFU110A 100V,4.7A I-PAK DISCRETEMOS FET IRFU120A 100V,8.4A I-PAK DISCRETEMOS FET IRFU220A 200V,4.6A I-PAK DISCRETEMOS FET IRFU230A 200V,7.5A I-PAK DISCRETEMOS FET IRFU410A 500V I-PAK DISCRETEMOS FET IRFU420A 500V,2.3A I-PAK DISCRETEMOS FET IRFZ20A TO-220 DISCRETEMOS FET IRFZ24A 60V,17A TO-220 DISCRETEMOS FET IRFZ30 TO-220 DISCRETEMOS FET IRFZ34A 60V,30A TO-220 DISCRETEMOS FET IRFZ40 TO-220 DISCRETEMOS FET IRFZ44A 60V,50A TO-220 DISCRETEMOS FET IRLS530A 100V,10.7A,Logic TO-220F DISCRETEMOS FET IRLSZ14A 60V,8A,Logic TO-220F DISCRETEMOS FET IRLZ24A 60V,17A,Logic TO-220 DISCRETEMOS FET IRLZ44A 60V,50A,Logic TO-220 DISCRETEMOS FET SFP36N03 30V,36A TO-220MOS FET SFP65N06 60V,65A TO-220 DISCRETEMOS FET SFP9540 -100V,17A TO-220 DISCRETEMOS FET SFP9634 -250V,5A TO-220 DISCRETEMOS FET SFP9644 -250V,8.6A TO-220 DISCRETEMOS FET SFP9Z34 -60V,18A TO-220 DISCRETEMOS FET SFR9214 -250V,1.53A D-PAK DISCRETEMOS FET SFR9224 -250V,2.5A D-PAK DISCRETEMOS FET SFR9310 -400V,1.5A D-PAK DISCRETEMOS FET SFS9630 -200V,4.4A TO-220F DISCRETEMOS FET SFS9634 -250V,3.4A TO-220F DISCRETEMOS FET SFU9220 -200V,3.1A I-PAK DISCRETEMOS FET SSD2002 25V N/P Dual 8SOP DISCRETEMOS FET SSD2019 20V P-ch Dual 8SOP DISCRETEMOS FET SSD2101 30V N-ch Single 8SOP DISCRETEMOS FET SSH10N80A 800V,10A TO-3P DISCRETEMOS FET SSH10N90A 900V,10A TO-3P DISCRETEMOS FET SSH5N90A 900V,5A TO-3PMOS FET SSH60N10 TO-3P DISCRETEMOS FET SSH6N80A 800V,6A TO-3P DISCRETEMOS FET SSH70N10A 100V,70A TO-3P DISCRETEMOS FET SSH7N90A 900V,7A TO-3P DISCRETEMOS FET SSH9N80A 800V,9A TO-3P DISCRETEMOS FET SSP10N60A 600V,9A TO-220 DISCRETEMOS FET SSP1N60A 600V,1A TO-220 DISCRETEMOS FET SSP2N90A 900V,2A TO-220 DISCRETEMOS FET SSP35N03 30V,35A TO-220 DISCRETEMOS FET SSP3N90A 900V,3A TO-220 DISCRETEMOS FET SSP4N60A 600V,4A TO-220 DISCRETEMOS FET SSP4N60AS 600V,4A TO-220 DISCRETEMOS FET SSP4N90AS 900V,4.5A TO-220 DISCRETEMOS FET SSP5N90A 900V,5A TO-220 DISCRETEMOS FET SSP60N06 60V,60A TO-220 DISCRETEMOS FET SSP6N60A 600V,6A TO-220 DISCRETEMOS FET SSP70N10A 100V,55A TO-220MOS FET SSP7N60A 600V,7A TO-220 DISCRETEMOS FET SSP7N80A 800V,7A TO-220 DISCRETEMOS FET SSP80N06A 60V,80A TO-220 DISCRETEMOS FET SSR1N60A 600V,0.9A D-PAK DISCRETEMOS FET SSR2N60A 600V,1.8A D-PAK DISCRETEMOS FET SSR3055A 60V,8A D-PAK DISCRETEMOS FET SSS10N60A 600V,5.1A TO-220F DISCRETEMOS FET SSS2N60A 600V,1.3A TO-220F DISCRETEMOS FET SSS3N80A 800V,2A TO-220F DISCRETEMOS FET SSS3N90A 900V,2A TO-220F DISCRETEMOS FET SSS4N60A 600V,3.5A TO-220(F/P) DISCRETEMOS FET SSS4N60AS 600V,2.3A TO-220(F/P) DISCRETEMOS FET SSS4N60AS 600V,2.3A TO-220F DISCRETEMOS FET SSS4N90AS 900V,2.8A TO-220F DISCRETEMOS FET SSS5N80A 800V,3A TO-220F DISCRETEMOS FET SSS6N60A 600V, TO-220(F/P) 2SK105 50V 0.01A 0.25W2SK161 18V 0.1A 0.2W2SK192 18V 0.1A 0.2W2SK413 140V 8A 100W2SK418 140V 8A 100W2SK544 20V 0.02A 0.03W2SK659 60V 12A 35W2SK701 60V 2A 15W2SK940 60V 0.8A 0.9W2SK1117 600V 6A 100W2SK1198 700V 2A 35W2SK1270 60V 2A 10WBUK453. 100A 100V 22A 75WBUK455. 60A 60V 38A 83WIRFBG20，IRFBG30，IRFPG50 IRFPG40 1000V。

IRLR024;IRLR024TRLPBF;IRLR024TR;IRLR024TRL;IRLU024;中文规格书,Datasheet资料

IRLR024;IRLR024TRLPBF;IRLR024TR;IRLR024TRL;IRLU024;中文规格书,Datasheet资料

Power MOSFETIRLR024, IRLU024, SiHLR024, SiHLU024Vishay SiliconixFEATURES•Dynamic dV/dt Rating•Surface Mount (IRLR024/SiHLR024)•Straight Lead (IRLU024/SiHLU024)•Available in Tape and Reel •Logic-Level Gate Drive•R DS(on) Specified at V GS = 4 V and 5 V •Fast Switching•Lead (Pb)-free AvailableDESCRIPTIONThird generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRLU/SiH LU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.a.See device orientation.Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).b.V DD = 25 V, starting T J = 25 °C, L = 541 µH, R G = 25 Ω, I AS = 14 A (see fig. 12).c.I SD ≤ 17 A, dI/dt ≤ 140 A/µs, V DD ≤ V DS , T J ≤ 150 °C.d. 1.6 mm from case.e.When mounted on 1" square PCB (FR-4 or G-10 material).PRODUCT SUMMARYV DS (V)60R DS(on) (Ω)V GS = 5.0 V0.10Q g (Max.) (nC)18Q gs (nC) 4.5Q gd (nC)12ConfigurationSingleORDERING INFORMATIONPackage DPAK (TO-252)DPAK (TO-252)IPAK (TO-251)Lead (Pb)-free IRLR024PbF IRLR024TRPbF a IRLU024PbF SiHLR024-E3SiHLR024T-E3a SiHLU024-E3 SnPbIRLR024IRLR024TR a IRLU024SiHLR024SiHLR024T aSiHLU024ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise notedPARA ETER SY M BOL LI M IT UNIT Drain-Source Voltage V DS60VGate-Source Voltage V GS ± 10 Continuous Drain Current V GS at 5.0 VT C = 25 °C I D14A T C = 100 °C9.2Pulsed Drain Current a I DM 56Linear Derating Factor0.33W/°C Linear Derating Factor (PCB Mount)e 0.020Single Pulse Avalanche Energy b E AS 91mJ Maximum Power DissipationT C = 25 °C P D42WMaximum Power Dissipation (PCB Mount)e T A = 25 °C2.5Peak Diode Recovery dV/dt cdV/dt 4.5V/ns Operating Junction and Storage Temperature Range T J , T stg- 55 to + 150°CSoldering Recommendations (Peak Temperature)for 10 s260d* Pb containing terminations are not RoHS compliant, exemptions may applyIRLR024, IRLU024, SiHLR024, SiHLU024Vishay SiliconixNotea.When mounted on 1" square PCB (FR-4 or G-10 material).Notesa.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).THERMAL RESISTANCE RATINGSPARA ETER SY M BOL M IN.TYP.M AX.UNITMaximum Junction-to-Ambient R thJA --110°C/W Maximum Junction-to-Ambient (PCB Mount)aR thJA --50Maximum Junction-to-Case (Drain)R thJC-- 3.0IRLR024, IRLU024, SiHLR024, SiHLU024Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise notedFig. 1 - Typical Output Characteristics, T C = 25 °CFig. 2 - Typical Output Characteristics, T C= 150 °CFig. 3 - Typical Transfer CharacteristicsFig. 4 - Normalized On-Resistance vs. TemperatureIRLR024, IRLU024, SiHLR024, SiHLU024 Vishay SiliconixFig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward VoltageFig. 8 - Maximum Safe Operating AreaIRLR024, IRLU024, SiHLR024, SiHLU024Vishay SiliconixFig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time WaveformsFig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-CaseIRLR024, IRLU024, SiHLR024, SiHLU024Vishay SiliconixFig. 12b - Unclamped Inductive WaveformsFig. 12c - Maximum Avalanche Energy vs. Drain CurrentFig. 13a - Basic Gate Charge WaveformFig. 13b - Gate Charge Test CircuitIRLR024, IRLU024, SiHLR024, SiHLU024Vishay Siliconix Array Fig. 14 - For N-ChannelVishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, andreliability data, see /ppg?91322.TO-252AA (HIGH VOLTAGE)MILLIMETERS INCHES DIM.MIN.MAX.MIN.MAX.E 6.40 6.730.2520.265L 1.40 1.770.0550.070L1 2.743 REF0.108 REFL20.508 BSC0.020 BSCL30.89 1.270.0350.050L40.64 1.010.0250.040D 6.00 6.220.2360.245H9.4010.400.3700.409b0.640.880.0250.035b20.77 1.140.0300.045b3 5.21 5.460.2050.215e 2.286 BSC0.090 BSCA 2.20 2.380.0870.094A10.000.130.0000.005c0.450.600.0180.024c20.450.580.0180.023D1 5.30-0.209-E1 4.40-0.173-θ0'10'0'10'ECN: S-81965-Rev. A, 15-Sep-08DWG: 5973Notes1. Package body sizes exclude mold flash, protrusion or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side.2. Package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, gate burrs and interlead flash, butincluding any mismatch between the top and bottom of the plastic body.3. The package top may be smaller than the package bottom.4. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.10 mm total in excess of "b" dimension at maximummaterial condition. The dambar cannot be located on the lower radius of the foot.TO-251AA (HIGH VOLTAGE)MILLIMETERS INCHES MILLIMETERS INCHES DIM.MIN.MAX.MIN.MAX.DIM.MIN.MAX.MIN.MAX.A 2.18 2.390.0860.094D1 5.21-0.205-A10.89 1.140.0350.045E 6.35 6.730.2500.265 b0.640.890.0250.035E1 4.32-0.170-b10.650.790.0260.031e 2.29 BSC 2.29 BSC b20.76 1.140.0300.045L8.899.650.3500.380 b30.76 1.040.0300.041L1 1.91 2.290.0750.090 b4 4.95 5.460.1950.215L20.89 1.270.0350.050 c0.460.610.0180.024L3 1.14 1.520.0450.060 c10.410.560.0160.022θ10'15'0'15' c20.460.860.0180.034θ225'35'25'35'D 5.97 6.220.2350.245ECN: S-82111-Rev. A, 15-Sep-08DWG: 5968Notes1. Dimensioning and tolerancing per ASME Y14.5M-1994.2. Dimension are shown in inches and millimeters.3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at theoutermost extremes of the plastic body.4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.5. Lead dimension uncontrolled in L3.6. Dimension b1, b3 and c1 apply to base metal only.7. Outline conforms to JEDEC outline TO-251AA.Application Note 826Vishay SiliconixA P P L I C A T I O N N O RECOMMENDED MINIMUM PADS FOR DPAK (TO-252)分销商库存信息:VISHAYIRLR024IRLR024TRLPBF IRLR024TR IRLR024TRL IRLU024。

常用场效应管型号参数管脚识别及检测表

常用场效应管型号参数管脚识别及检测表

常用场效应管型号参数管脚识别及检测表场效应管管脚识别场效应管的检测和使用场效应管的检测和使用一、用指针式万用表对场效应管进行判别（1）用测电阻法判别结型场效应管的电极根据场效应管的PN结正、反向电阻值不一样的现象，可以判别出结型场效应管的三个电极。

具体方法：将万用表拨在R×1k档上，任选两个电极，分别测出其正、反向电阻值。

当某两个电极的正、反向电阻值相等，且为几千欧姆时，则该两个电极分别是漏极D和源极S。

因为对结型场效应管而言，漏极和源极可互换，剩下的电极肯定是栅极Ｇ。

也可以将万用表的黑表笔（红表笔也行）任意接触一个电极，另一只表笔依次去接触其余的两个电极，测其电阻值。

当出现两次测得的电阻值近似相等时，则黑表笔所接触的电极为栅极，其余两电极分别为漏极和源极。

若两次测出的电阻值均很大，说明是ＰＮ结的反向，即都是反向电阻，可以判定是Ｎ沟道场效应管，且黑表笔接的是栅极；若两次测出的电阻值均很小，说明是正向ＰＮ结，即是正向电阻，判定为Ｐ沟道场效应管，黑表笔接的也是栅极。

若不出现上述情况，可以调换黑、红表笔按上述方法进行测试，直到判别出栅极为止。

（2）用测电阻法判别场效应管的好坏测电阻法是用万用表测量场效应管的源极与漏极、栅极与源极、栅极与漏极、栅极Ｇ1与栅极Ｇ2之间的电阻值同场效应管手册标明的电阻值是否相符去判别管的好坏。

具体方法：首先将万用表置于Ｒ×１０或Ｒ×100档，测量源极Ｓ与漏极Ｄ之间的电阻，通常在几十欧到几千欧范围（在手册中可知，各种不同型号的管，其电阻值是各不相同的），如果测得阻值大于正常值，可能是由于内部接触不良；如果测得阻值是无穷大，可能是内部断极。

然后把万用表置于Ｒ×１０ｋ档，再测栅极Ｇ1与Ｇ2之间、栅极与源极、栅极与漏极之间的电阻值，当测得其各项电阻值均为无穷大，则说明管是正常的；若测得上述各阻值太小或为通路，则说明管是坏的。

要注意，若两个栅极在管内断极，可用元件代换法进行检测。

常用高压MOSFET型号

常用高压MOSFET型号

场效应管分类型号简介封装DISCRETEMOS FET 2N7000 60V,0.115A TO-92 DISCRETEMOS FET 2N7002 60V,0.2A SOT-23 DISCRETEMOS FET IRF510A 100V,5.6A TO-220 DISCRETEMOS FET IRF520A 100V,9.2A TO-220 DISCRETEMOS FET IRF530A 100V,14A TO-220 DISCRETEMOS FET IRF540A 100V,28A TO-220 DISCRETEMOS FET IRF610A 200V,3.3A TO-220 DISCRETEMOS FET IRF620A 200V,5A TO-220 DISCRETEMOS FET IRF630A 200V,9A TO-220 DISCRETEMOS FET IRF634A 250V,8.1A TO-220 DISCRETEMOS FET IRF640A 200V,18A TO-220 DISCRETEMOS FET IRF644A 250V,14A TO-220 DISCRETEMOS FET IRF650A 200V,28A TO-220 DISCRETEMOS FET IRF654A 250V,21A TO-220 DISCRETEMOS FET IRF720A 400V,3.3A TO-220 DISCRETEMOS FET IRF730A 400V,5.5A TO-220 DISCRETEMOS FET IRF740A 400V,10A TO-220 DISCRETEMOS FET IRF750A 400V,15A TO-220 DISCRETEMOS FET IRF820A 500V,2.5A TO-220 DISCRETEMOS FET IRF830A 500V,4.5A TO-220 DISCRETEMOS FET IRF840A 500V,8A TO-220 DISCRETEMOS FET IRF9520 TO-220 DISCRETEMOS FET IRF9540 TO-220 DISCRETEMOS FET IRF9610 TO-220 DISCRETEMOS FET IRF9620 TO-220 DISCRETEMOS FET IRFP150A 100V,43A TO-3P DISCRETEMOS FET IRFP250A 200V,32A TO-3P DISCRETEMOS FET IRFP450A 500V,14A TO-3P DISCRETEMOS FET IRFR024A 60V,15A D-PAK DISCRETEMOS FET IRFR120A 100V,8.4A D-PAK DISCRETEMOS FET IRFR214A 250V,2.2A D-PAK DISCRETEMOS FET IRFR220A 200V,4.6A D-PAK DISCRETEMOS FET IRFR224A 250V,3.8A D-PAK DISCRETEMOS FET IRFR310A 400V,1.7A D-PAK DISCRETEMOS FET IRFR9020TF D-PAK DISCRETEMOS FET IRFS540A 100V,17A TO-220F DISCRETEMOS FET IRFS630A 200V,6.5A TO-220F DISCRETEMOS FET IRFS634A 250V,5.8A TO-220F DISCRETEMOS FET IRFS640A 200V,9.8A TO-220F DISCRETEMOS FET IRFS644A 250V,7.9A TO-220F DISCRETEMOS FET IRFS730A 400V,3.9A TO-220F DISCRETEMOS FET IRFS740A 400V,5.7A TO-220F DISCRETEMOS FET IRFS830A 500V,3.1A TO-220F DISCRETEDISCRETEMOS FET IRFS9Z34 -60V,12A TO-220F DISCRETEMOS FET IRFSZ24A 60V,14A TO-220F DISCRETEMOS FET IRFSZ34A 60V,20A TO-220F DISCRETEMOS FET IRFU110A 100V,4.7A I-PAK DISCRETEMOS FET IRFU120A 100V,8.4A I-PAK DISCRETEMOS FET IRFU220A 200V,4.6A I-PAK DISCRETEMOS FET IRFU230A 200V,7.5A I-PAK DISCRETEMOS FET IRFU410A 500V I-PAK DISCRETEMOS FET IRFU420A 500V,2.3A I-PAK DISCRETEMOS FET IRFZ20A TO-220 DISCRETEMOS FET IRFZ24A 60V,17A TO-220 DISCRETEMOS FET IRFZ30 TO-220DISCRETEMOS FET IRFZ34A 60V,30A TO-220 DISCRETEMOS FET IRFZ40 TO-220DISCRETEMOS FET IRFZ44A 60V,50A TO-220 DISCRETEMOS FET IRLS530A 100V,10.7A,Logic TO-220F DISCRETEMOS FET IRLSZ14A 60V,8A,Logic TO-220F DISCRETEMOS FET IRLZ24A 60V,17A,Logic TO-220 DISCRETEMOS FET IRLZ44A 60V,50A,Logic TO-220 DISCRETEMOS FET SFP36N03 30V,36A TO-220 DISCRETEMOS FET SFP65N06 60V,65A TO-220 DISCRETEDISCRETEMOS FET SFP9634 -250V,5A TO-220 DISCRETEMOS FET SFP9644 -250V,8.6A TO-220 DISCRETEMOS FET SFP9Z34 -60V,18A TO-220 DISCRETEMOS FET SFR9214 -250V,1.53A D-PAK DISCRETEMOS FET SFR9224 -250V,2.5A D-PAK DISCRETEMOS FET SFR9310 -400V,1.5A D-PAK DISCRETEMOS FET SFS9630 -200V,4.4A TO-220F DISCRETEMOS FET SFS9634 -250V,3.4A TO-220F DISCRETEMOS FET SFU9220 -200V,3.1A I-PAK DISCRETEMOS FET SSD2002 25V N/P Dual 8SOP DISCRETEMOS FET SSD2019 20V P-ch Dual 8SOP DISCRETEMOS FET SSD2101 30V N-ch Single 8SOP DISCRETEMOS FET SSH10N80A 800V,10A TO-3P DISCRETEMOS FET SSH10N90A 900V,10A TO-3P DISCRETEMOS FET SSH5N90A 900V,5A TO-3P DISCRETEMOS FET SSH60N10 TO-3P DISCRETEMOS FET SSH6N80A 800V,6A TO-3P DISCRETEMOS FET SSH70N10A 100V,70A TO-3P DISCRETEMOS FET SSH7N90A 900V,7A TO-3P DISCRETEMOS FET SSH9N80A 800V,9A TO-3P DISCRETEMOS FET SSP10N60A 600V,9A TO-220 DISCRETEDISCRETEMOS FET SSP2N90A 900V,2A TO-220 DISCRETEMOS FET SSP35N03 30V,35A TO-220 DISCRETEMOS FET SSP3N90A 900V,3A TO-220 DISCRETEMOS FET SSP4N60A 600V,4A TO-220 DISCRETEMOS FET SSP4N60AS 600V,4A TO-220 DISCRETEMOS FET SSP4N90AS 900V,4.5A TO-220 DISCRETEMOS FET SSP5N90A 900V,5A TO-220 DISCRETEMOS FET SSP60N06 60V,60A TO-220 DISCRETEMOS FET SSP6N60A 600V,6A TO-220 DISCRETEMOS FET SSP70N10A 100V,55A TO-220 DISCRETEMOS FET SSP7N60A 600V,7A TO-220 DISCRETEMOS FET SSP7N80A 800V,7A TO-220 DISCRETEMOS FET SSP80N06A 60V,80A TO-220 DISCRETEMOS FET SSR1N60A 600V,0.9A D-PAK DISCRETEMOS FET SSR2N60A 600V,1.8A D-PAK DISCRETEMOS FET SSR3055A 60V,8A D-PAK DISCRETEMOS FET SSS10N60A 600V,5.1A TO-220F DISCRETEMOS FET SSS2N60A 600V,1.3A TO-220F DISCRETEMOS FET SSS3N80A 800V,2A TO-220F DISCRETEMOS FET SSS3N90A 900V,2A TO-220F DISCRETEMOS FET SSS4N60A 600V,3.5A TO-220(F/P) DISCRETEMOS FET SSS4N60AS 600V,2.3A TO-220(F/P) DISCRETEMOS FET SSS4N60AS 600V,2.3A TO-220F DISCRETEMOS FET SSS4N90AS 900V,2.8A TO-220F DISCRETEMOS FET SSS5N80A 800V,3A TO-220F DISCRETEMOS FET SSS6N60A 600V, TO-220(F/P)。

常用场效应管型号参数管脚识别及检测表

常用场效应管型号参数管脚识别及检测表

经常使用场效应管型号参数管脚识别及检测表之阿布丰王创作场效应管管脚识别场效应管的检测和使用场效应管的检测和使用一、用指针式万用表对场效应管进行判别（1）用测电阻法判别结型场效应管的电极根据场效应管的PN结正、反向电阻值纷歧样的现象，可以判别出结型场效应管的三个电极。

具体方法：将万用表拨在R×1k档上，任选两个电极，分别测出其正、反向电阻值。

当某两个电极的正、反向电阻值相等，且为几千欧姆时，则该两个电极分别是漏极D和源极S。

因为对结型场效应管而言，漏极和源极可互换，剩下的电极肯定是栅极Ｇ。

也可以将万用表的黑表笔（红表笔也行）任意接触一个电极，另一只表笔依次去接触其余的两个电极，测其电阻值。

当出现两次测得的电阻值近似相等时，则黑表笔所接触的电极为栅极，其余两电极分别为漏极和源极。

若两次测出的电阻值均很大，说明是ＰＮ结的反向，即都是反向电阻，可以判定是Ｎ沟道场效应管，且黑表笔接的是栅极；若两次测出的电阻值均很小，说明是正向ＰＮ结，即是正向电阻，判定为Ｐ沟道场效应管，黑表笔接的也是栅极。

若不出现上述情况，可以调换黑、红表笔按上述方法进行测试，直到判别出栅极为止。

（2）用测电阻法判别场效应管的好坏测电阻法是用万用表丈量场效应管的源极与漏极、栅极与源极、栅极与漏极、栅极Ｇ1与栅极Ｇ2之间的电阻值同场效应管手册标明的电阻值是否相符去判别管的好坏。

具体方法：首先将万用表置于Ｒ×１０或Ｒ×100档，丈量源极Ｓ与漏极Ｄ之间的电阻，通常在几十欧到几千欧范围（在手册中可知，各种分歧型号的管，其电阻值是各不相同的），如果测得阻值大于正常值，可能是由于内部接触不良；如果测得阻值是无穷大，可能是内部断极。

然后把万用表置于Ｒ×１０ｋ档，再测栅极Ｇ1与Ｇ2之间、栅极与源极、栅极与漏极之间的电阻值，当测得其各项电阻值均为无穷大，则说明管是正常的；若测得上述各阻值太小或为通路，则说明管是坏的。

常用场效应管型号参数管脚识别及检测表

常用场效应管型号参数管脚识别及检测表

常用场效应管型号参数管脚识别及检测表场效应管管脚识别场效应管的检测和使用场效应管的检测和使用一、用指针式万用表对场效应管进行判别（1）用测电阻法判别结型场效应管的电极根据场效应管的PN结正、反向电阻值不一样的现象，可以判别出结型场效应管的三个电极。

具体方法:将万用表拨在R ×1k档上，任选两个电极，分别测出其正、反向电阻值。

当某两个电极的正、反向电阻值相等，且为几千欧姆时，则该两个电极分别是漏极D和源极S。

因为对结型场效应管而言，漏极和源极可互换,剩下的电极肯定是栅极Ｇ.也可以将万用表的黑表笔（红表笔也行）任意接触一个电极，另一只表笔依次去接触其余的两个电极,测其电阻值.当出现两次测得的电阻值近似相等时，则黑表笔所接触的电极为栅极,其余两电极分别为漏极和源极.若两次测出的电阻值均很大,说明是ＰＮ结的反向，即都是反向电阻,可以判定是Ｎ沟道场效应管，且黑表笔接的是栅极；若两次测出的电阻值均很小,说明是正向ＰＮ结，即是正向电阻，判定为Ｐ沟道场效应管，黑表笔接的也是栅极。

若不出现上述情况，可以调换黑、红表笔按上述方法进行测试，直到判别出栅极为止。

（2）用测电阻法判别场效应管的好坏测电阻法是用万用表测量场效应管的源极与漏极、栅极与源极、栅极与漏极、栅极Ｇ1与栅极Ｇ2之间的电阻值同场效应管手册标明的电阻值是否相符去判别管的好坏。

具体方法:首先将万用表置于Ｒ×１０或Ｒ×100档，测量源极Ｓ与漏极Ｄ之间的电阻，通常在几十欧到几千欧范围（在手册中可知,各种不同型号的管,其电阻值是各不相同的），如果测得阻值大于正常值，可能是由于内部接触不良；如果测得阻值是无穷大，可能是内部断极。

然后把万用表置于Ｒ×１０ｋ档,再测栅极Ｇ1与Ｇ2之间、栅极与源极、栅极与漏极之间的电阻值,当测得其各项电阻值均为无穷大,则说明管是正常的；若测得上述各阻值太小或为通路，则说明管是坏的。

要注意，若两个栅极在管内断极，可用元件代换法进行检测。

IRFR214中文资料

IRFR214中文资料

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Eas
Formerly developmental type TA17443.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFR214
TO-252AA
IRFR214
IRFU214
TO-251AA
IRFU214
NOTE: When ordering, use the entire part number.
Source Lead, 6mm
LD
(0.25in) From Header to
Source Bonding Pad
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
or 407-727-9207 | Copyright © Intersil Corporation 1999

IRLU024N中文资料

IRLU024N中文资料

HEXFET ®Power MOSFETParameterTyp.Max.UnitsR θJC Junction-to-Case––– 3.3R θJA Case-to-Ambient (PCB mount)**–––50°C/WR θJAJunction-to-Ambient–––110Thermal ResistanceDescription2/10/00 1l Logic-Level Gate Drive l Surface Mount (IRLR024N)l Straight Lead (IRLU024N)l Advanced Process Technology l Fast SwitchinglFully Avalanche RatedFifth Generation HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.** When mounted on 1" square PCB (FR-4 or G-10 Material ) .For recommended footprint and soldering techniques refer to application note #AN-994ParameterMax.UnitsI D @ T C = 25°C Continuous Drain Current, V GS @ 10V 17I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 12A I DMPulsed Drain Current 72P D @T C = 25°C Power Dissipation 45W Linear Derating Factor 0.3W/°C V GS Gate-to-Source Voltage± 16V E AS Single Pulse Avalanche Energy 68mJ I AR Avalanche Current11A E AR Repetitive Avalanche Energy 4.5mJ dv/dt Peak Diode Recovery dv/dt 5.0V/ns T J Operating Junction and-55 to + 175T STGStorage Temperature RangeSoldering Temperature, for 10 seconds300 (1.6mm from case )°CAbsolute Maximum RatingsPD- 91363ED-Pak I-Pak IRLR024N IRLU024NIRLR024N IRLU024NIRLR/U024NIRLR/U024NIRLR/U024NIRLR/U024NIRLR/U024NIRLR/U024NIRLR/U024NIRLR/U024NIRLR/U024N。

元件选型型号

元件选型型号

型号：2N4401参数：Small Signal General Purpose NPN原装正品，进口全新，无铅环保，可长期供货。

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我们视“客户+企业=共赢”作为企业发展的基础，做最诚信的供应商，希望真诚与您携手共进、共同成长，为国家的和谐发展和电子行业的繁荣作出应有的贡献！++++系列场效应管（MOSFET）：IRF1010E，IRF1404，IRF1405，IRF5305，IRF2807，IRF3205，IRF3710，I RF4905，IRF5210，IRF530，IRF530N，IRF540N，IRF630N，IRF640N，IR F730，IRF740，IRF830，IRF840，IRF9510，IRF9520，IRF9530N，IRF954 0，IRF9540N，IRF9630，IRF9640，IRFZ24N，IRFZ34N，IRFZ44N，IRFZ4 4R，IRFZ44V，IRLZ44N，IRFZ46N，IRFZ46Z，IRFZ48V，IRFZ48N，IRF9 Z24N，IRF9Z34N，IRFP150，IRFP150N，IRFP250N，IRFP260N，IRFP25 4N，IRFP264，IRFP264N，IRFP350，IRFP360，IRFP450，IRFP450LC，I RFP460，IRFP460A，IRFP460LC，IRFP054N，IRFP064N，IRFBE30，IRF 520N，IRF634，IRF710，IRF720，IRF820，IRF4905L，IRF5303，IR2520D，IRFP240，IRFP9240，IRF610，IRF9610，IRF5210，IRFR024N，IRFR120N，IRFR220N，IRFR9024，IRFR420，IRFR5305，IRF7313，IRF7314，IRF741 3，IRFL9110，IRL3705，IRL3803，IRL3803S，IRFD110，IRFD9110，IRFD9220，IRFD220，IRFD120，IRFD9120，IRFU9120，IRF6216，IRF640NS，IRF3415，IRFB4310，IRF7210，IRF9530S，IRF7832，IRFP140N，IRFP44 8，IRFP2907，IRFP9140N，IRFPC50，IRFPC60，IRFBE30，IRFPE40，IR FPE50，IRFPF50，IRFPG50，IRFBC20，IRFBC30，IRFBC40，IRFBG20，IRFBG30，IRLML6302TR，IRLML2402TR，IRLML2502TR，IRLML2803TR，IRLML5103TR，IRLML5203TR，IRLML6401TR，IRLML6402TR，IRFB4710，IRFB4212，IRFB11N50A，IRFB38N20D，IRFB31N20D，STP60NF06，STP 75NF75，STP55NF06，2SK2645，IRF630B，IRF640B，IRF840B，FQPF2 N60C，FQP5N60C，FQF5N60C，SSS7N60B，FQPF8N60C，FQPF10N60 C，FQPF12N60C，FYP2010DNTU，FQP50N06，FGA15N120ANTDTU，FGA25N120ANTDTU。

IRFR024N_datasheet

IRFR024N_datasheet

IRFR/U024NPRELIMINARYHEXFET ®Power MOSFETParameterTyp.Max.UnitsR θJC Junction-to-Case––– 3.3R θJA Case-to-Ambient (PCB mount)**–––50°C/WR θJAJunction-to-Ambient–––110Thermal ResistanceDescription 1D -P ak T O -252A AI-P ak TO -251AAl Ultra Low On-Resistance l Surface Mount (IRFR024N)l Straight Lead (IRFU024N)l Advanced Process Technology l Fast SwitchinglFully Avalanche RatedFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,provides the designer with an extremely efficient device for use in a wide variety of applications.The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.** When mounted on 1" square PCB (FR-4 or G-10 Material ) .For recommended footprint and soldering techniques refer to application note #AN-994ParameterMax.UnitsI D @ T C = 25°C Continuous Drain Current, V GS @ 10V 17I D @ T C = 100°C Continuous Drain Current, V GS @ 10V 12A I DMPulsed Drain Current 68P D @T C = 25°C Power Dissipation 45W Linear Derating Factor 0.30W/°C V GS Gate-to-Source Voltage± 20V E AS Single Pulse Avalanche Energy 71mJ I AR Avalanche Current10A E AR Repetitive Avalanche Energy 4.5mJ dv/dt Peak Diode Recovery dv/dt 5.0V/ns T J Operating Junction and-55 to + 175T STGStorage Temperature RangeSoldering Temperature, for 10 seconds300 (1.6mm from case )°CAbsolute Maximum RatingsPD- 9.1336AIRFR/U024NIRFR/U024NIRFR/U024NIRFR/U024NIRFR/U024NIRFR/U024NIRFR/U024NIRFR/U024NIRFR/U024N。

常用MOS管型号参数(精)

常用MOS管型号参数(精)

场效应管分类型号简介封装 DISCRETE MOS FET 2N7000 60V,0.115A TO-92 DISCRETE MOS FET 2N7002 60V,0.2A SOT-23 DISCRETE MOS FET IRF510A 100V,5.6A TO-220 DISCRETE MOS FET IRF520A 100V,9.2A TO-220 DISCRETE MOS FET IRF530A 100V,14A TO-220 DISCRETE MOS FET IRF540A 100V,28A TO-220 DISCRETE MOS FET IRF610A 200V,3.3A TO-220 DISCRETE MOS FETIRF620A 200V,5A TO-220 DISCRETE MOS FET IRF630A 200V,9A TO-220 DISCRETE MOS FET IRF634A 250V,8.1A TO-220 DISCRETE MOS FET IRF640A 200V,18A TO-220 DISCRETE MOS FET IRF644A 250V,14A TO-220 DISCRETE MOS FET IRF650A 200V,28A TO-220 DISCRETE MOS FET IRF654A 250V,21A TO-220 DISCRETE MOS FET IRF720A 400V,3.3A TO-220 DISCRETE MOS FETIRF730A 400V,5.5A TO-220 DISCRETE MOS FET IRF740A 400V,10A TO-220 DISCRETE MOS FET IRF750A 400V,15A TO-220 DISCRETE MOS FET IRF820A 500V,2.5A TO-220 DISCRETE MOS FET IRF830A 500V,4.5A TO-220 DISCRETE MOS FET IRF840A 500V,8A TO-220 DISCRETE MOS FET IRF9520 -100V,-6A TO-220 DISCRETE MOS FET IRF9540 -100V,-19A TO-220 DISCRETE MOS FETIRF9610 -200V,-1.8A TO-220 DISCRETE MOS FET IRF9620 -200V,-3.5A TO-220 DISCRETE MOS FET IRFP150A 100V,43A TO-3P DISCRETE MOS FET IRFP250A 200V,32A TO-3P DISCRETE MOS FET IRFP450A 500V,14A TO-3P DISCRETE MOS FET IRFR024A 60V,15A D-PAK DISCRETE MOS FET IRFR120A 100V,8.4A D-PAK DISCRETE MOS FET IRFR214A 250V,2.2A D-PAK DISCRETE MOS FET IRFR220A 200V,4.6A D-PAK DISCRETE MOS FET IRFR224A 250V,3.8A D-PAK DISCRETE MOS FET IRFR310A 400V,1.7A D-PAK DISCRETE MOS FET IRFR9020 -50V,-9.9A D-PAK DISCRETE MOS FET IRFS540A 100V,17A TO-220F DISCRETE MOS FET IRFS630A 200V,6.5A TO-220F DISCRETE MOS FET IRFS634A250V,5.8A TO-220F DISCRETE MOS FET IRFS640A 200V,9.8A TO-220F DISCRETE MOS FET IRFS644A 250V,7.9A TO-220F DISCRETE MOS FETIRFS730A 400V,3.9A TO-220F DISCRETE MOS FET IRFS740A 400V,5.7A TO-220F DISCRETE MOS FET IRFS830A 500V,3.1A TO-220F DISCRETE MOS FETIRFS840A 500V,4.6A TO-220F DISCRETE MOS FET IRFS9Z34 -60V,-12A TO-220F DISCRETE MOS FET IRFSZ24A 60V,14A TO-220F DISCRETE MOS FETIRFSZ34A 60V,20A TO-220F DISCRETE MOS FET IRFU110A 100V,4.7A I-PAK DISCRETE MOS FET IRFU120A 100V,8.4A I-PAK DISCRETE MOS FET IRFU220A 200V,4.6A I-PAK DISCRETE MOS FET IRFU230A 200V,7.5A I-PAK DISCRETE MOS FET IRFU410A 500V ,1.2A I-PAK DISCRETE MOS FET IRFU420A 500V,2.3A I-PAK DISCRETE MOS FET IRFZ20A 50V,15A TO-220 DISCRETE MOS FET IRFZ24A 60V,17A TO-220 DISCRETE MOS FET IRFZ30 50V,30A TO-220 DISCRETE MOS FET IRFZ34A 60V,30A TO-220 DISCRETE MOS FET IRFZ4050V,50A TO-220 DISCRETE MOS FET IRFZ44A 60V,50A TO-220 DISCRETE MOS FET IRLS530A 100V,10.7A,Logic TO-220F DISCRETE MOS FET IRLSZ14A60V,8A,Logic TO-220F DISCRETE MOS FET IRLZ24A 60V,17A,Logic TO-220 DISCRETE MOS FET IRLZ44A 60V,50A,Logic TO-220 DISCRETE MOS FETSFP36N03 30V,36A TO-220 DISCRETE MOS FET SFP65N06 60V,65A TO-220 DISCRETE MOS FET SFP9540 -100V,-17A TO-220 DISCRETE MOS FET SFP9634 -250V,-5A TO-220DISCRETE MOS FET SFP9644 -250V,-8.6A TO-220 DISCRETE MOS FET SFP9Z34 -60V,-18A TO-220 DISCRETE MOS FET SFR9214 -250V,-1.53A D-PAK DISCRETE MOS FET SFR9224 -250V,-2.5A D-PAK DISCRETE MOS FET SFR9310 -400V,-1.5A D-PAK DISCRETE MOS FET SFS9630 -200V,-4.4A TO-220F DISCRETE MOS FET SFS9634 -250V,-3.4A TO-220F DISCRETE MOS FETSFU9220 -200V,-3.1A I-PAK DISCRETE MOS FET SSD2002 25V N/P Dual 8SOP DISCRETE MOS FET SSD2019 20V P-ch Dual 8SOP DISCRETE MOS FET SSD2101 30V N-ch Single 8SOP DISCRETE MOS FET SSH10N80A 800V,10A TO-3P DISCRETE MOS FET SSH10N90A 900V,10A TO-3P DISCRETE MOS FETSSH5N90A 900V,5A TO-3P DISCRETE MOS FET SSH60N10 100V,60A TO-3P DISCRETE MOS FET SSH6N80A 800V,6A TO-3P DISCRETE MOS FETSSH70N10A 100V,70A TO-3P DISCRETE MOS FET SSH7N90A 900V,7A TO-3PDISCRETE MOS FET SSH9N80A 800V,9A TO-3P DISCRETE MOS FETSSP10N60A 600V,9A TO-220 DISCRETE MOS FET SSP1N60A 600V,1A TO-220 DISCRETE MOS FET SSP2N90A 900V,2A TO-220 DISCRETE MOS FET SSP35N03 30V,35A TO-220 DISCRETE MOS FET SSP3N90A 900V,3A TO-220 DISCRETE MOS FET SSP4N60A 600V,4A TO-220 DISCRETE MOS FET SSP4N60AS 600V,4A TO-220 DISCRETE MOS FET SSP4N90AS 900V,4.5A TO-220 DISCRETE MOS FET SSP5N90A 900V,5A TO-220 DISCRETE MOS FET SSP60N06 60V,60A TO-220 DISCRETE MOS FET SSP6N60A 600V,6A TO-220 DISCRETE MOS FETSSP70N10A 100V,55A TO-220 DISCRETE MOS FET SSP7N60A 600V,7A TO-220 DISCRETE MOS FET SSP7N80A 800V,7A TO-220 DISCRETE MOS FETSSP80N06A 60V,80A TO-220 DISCRETE MOS FET SSR1N60A 600V,0.9A D-PAK DISCRETE MOS FET SSR2N60A 600V,1.8A D-PAK DISCRETE MOS FETSSR3055A 60V,8A D-PAK DISCRETE MOS FET SSS10N60A 600V,5.1A TO-220F DISCRETE MOS FET SSS2N60A 600V,1.3A TO-220F DISCRETE MOS FETSSS3N80A 800V,2A TO-220F DISCRETE MOS FET SSS3N90A 900V,2A TO-220F DISCRETE MOS FET SSS4N60AS 600V,2.3A TO-220F DISCRETE MOS FETSSS4N90AS 900V,2.8A TO-220F DISCRETE MOS FET SSS5N80A 800V,3A TO-220F DISCRETE MOS FET SSS6N60 600V, 3.2A TO-220(F/P。

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