SI2328DS_08中文资料

Test Conditions
VGS = 0 V, ID = 1 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 70_C VDS w 15 V, VGS = 10 V VGS = 10 V, ID = 1.5 A VDS = 15 V, ID = 1.5 A
1.15
1.2
0.92
6
6
1.8
0.6
1.25
0.73
0.80
0.47
−55 to 150
Unit
V
A
mJ A W _C
THERMAL RESISTANCE RATINGS Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
TO-236 (SOT-23)
G1 S2
3D
Top View Si2328DS (D8)* *Marking Code
Ordering Information: Si2328DS-T1 Si2328DS-T1—E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
IDSS ID(on) rDS(on)
gfs VSD
Qg Qgs Qgd Rg
td(on) tr
td(off) tf trr
Notes a. Pulse test: PW v300 ms duty cycle v2%. b. Guaranteed by design, not subject to production testing.
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance
Switching
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Source-Drain Reverse Recovery Time
3
6
9
12
ID − Drain Current (A)
Gate Charge 20
VDS = 50 V ID = 1.5 A 16
C − Capacitance (pF)
200
Ciss 150
100
50
Coss
Crss 0
0
20
40
60
80
100
VDS − Drain-to-Source Voltage (V)
Document Number: 71796 S-41259—Rev. C, 05-Jul-04
rDS(on) − On-Resistance ( W )
0.0 −50 −25 0
25 50 75 100 125 150
TJ − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage 0.6
Threshold Voltage
0.6
12
0.3
10
ID = 250 mA
0.0
8
Power (W)
VGS(th) Variance (V)
−0.3
6
−0.6
4
−0.9
2
−1.2 −50 −25
0 25 50 75 100 125 150 TJ − Temperature (_C)
0 0.01
Single Pulse Power TA = 25_C
Power Dissipationa
Operating Junction and Storage Temperature Range
TA= 25_C TA= 70_C
L = 0.1 mH
TA= 25_C TA= 70_C
VDS VGS
ID
IDM IAS EAS IS
PD
TJ, Tstg
100
"20
1.5
Document Number: 71796 S-41259—Rev. C, 05-Jul-04
t v 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
80 130 45
Maximum
100 170 55
Unit
_C/W
1
Legal Disclaimer Notice
Vishay
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.
On-Resistance vs. Junction Temperature 2.5
VGS = 10 V ID = 1.5 A 2.0
rDS(on) − On-Resiistance (Normalized)
V GS − Gate-to-Source Voltage (V)
12
1.5
8
1.0
4
0.5
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.
rDS(on) − On-Resistance ( W )
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.6
250
Capacitance
0.5
0.4 VGS = 10 V
0.3
0.2
0.1
0.0
0
10
100
600
Normalized Effective Transient Thermal Impedance
4
Document Number: 71796 S-41259—Rev. C, 05-Jul-04
元器件交易网
Disclaimer
TC = 125_C 3
25_C
−55_C
0
0
2
4
6
8
VGS − Gate-to-Source Voltage (V)
Document Number: 71796 S-41259—Rev. C, 05-Jul-04
元器件交易网
Si2328DS
Vishay Siliconix
10−1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2 1. Duty Cycle, D =
t1 t2
2. Per Unit Base = RthJA = 176_C/W
3. TJM − TA = PDMZthJA(t)
4. Surface Mounted
元器件交易网
Si2328DS
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage
元器件交易网
N-Channel 100-V (D-S) MOSFET
Si2328DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
100
rDS(on) (W)
0.250 @ VGS = 10 V
ID (A)
1.5
FEATURES D 100% Rg Tested
IS = 1.0 A, VGS = 0 V