MBRS360BT3G;MBRS360T3G;中文规格书,Datasheet资料

合集下载

MBRS340;中文规格书,Datasheet资料

MBRS340;中文规格书,Datasheet资料

VCX™
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Thermal Characteristics
Symbol
RθJL
Parameter
Thermal Resistance, Junction to Lead
Value
11
Units
°C/W
Electrical Characteristics
Symbol
VF IR Forward Voltage Reverse Current
MBRS340
MBRS340
Features • Compact surface mount with J-bend leads (SMC) • 3.0 Watt Power Dissipation package • 3.0 Ampere, forward voltage less than 500 mV

MBRS340中文资料

MBRS340中文资料

DIM A
2 1 A
(mils) 220 260 79 305 115 4 30 6
B C D E F G HBBiblioteka DAH C
G
F
E
SMC PACKAGE
PACKAGE CODE = (MC) Fairchild Semiconductor's Criteria
元器件交易网
MBRS340
SCHOTTKY POWER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters. This device offers a low forward voltage performance in a power surface mount package in applications where size and weight are critical. Features:
Forward Voltage vs Temperature
Reverse Leakage Current vs Temperature
10 5
125ºC
1 0.1 0.01 0.001 0.0001
100ºC 75ºC
100ºC
25ºC
25ºC
I
F-
R-
0
5
10 15 20 25 30 V R - REVERSE VOLTAGE (V)

MBR0540T1G;MBR0540T3G;NRVB0540T1G;中文规格书,Datasheet资料

MBR0540T1G;MBR0540T3G;NRVB0540T1G;中文规格书,Datasheet资料
Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 7
1
Publication Order Number: MBR0540T1/D
/
MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
10
100
10
25C
1.0 TJ = 125C TJ = -40C TJ = 25C TJ = 100C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
ELECTRICAL CHARACTERISTICS
Characteristic Maximum Instantaneous Forward Voltage (Note 3) (iF = 0.5 A) (iF = 1 A) Maximum Instantaneous Reverse Current (Note 3) (VR = 40 V) (VR = 20 V) 3. Pulse Test: Pulse Width 250 ms, Duty Cycle 2.0%. IR Symbol vF TJ = 25C 0.51 0.62 TJ = 25C 20 10 Value TJ = 100C 0.46 0.61 TJ = 100C 13,000 5,000 mA Unit V

MBRS140T3G;中文规格书,Datasheet资料

MBRS140T3G;中文规格书,Datasheet资料

(Note: Microdot may be in either location)
Lead and Mounting Surface Temperature for Soldering Purposes:
ORDERING INFORMATION
Device MBRS140T3G SBRS8140T3G Package SMB (Pb−Free) SMB (Pb−Free) Shipping† 2,500 / Tape & Reel 2,500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
DC
3 10
0
1
2
3
4
5
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Power Dissipation

3
/
MBRS140T3G, SBRS8140T3G
PACKAGE DIMENSIONS
Figure 3. Typical Capacitance
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
10 9 8 7 6 5 4 3 2 1 0 30 40 50 60 70 80 90 100 TC, CASE TEMPERATURE (C) 110 120 130

SBRD8320T4G;SBRD8330T4G;SBRD8340T4G;SBRD8350T4G;SBRD8360T4G;中文规格书,Datasheet资料

SBRD8320T4G;SBRD8330T4G;SBRD8340T4G;SBRD8350T4G;SBRD8360T4G;中文规格书,Datasheet资料

DPAK CASE 369C
1 3
4
MARKING DIAGRAM
YWW B 3x0G
Mechanical Characteristics:
Case: Epoxy, Molded Weight: 0.4 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal
MBRD320G, MBRD330G, MBRD340G, MBRD350G, MBRD360G,
SBRD8320G, SBRD8330G, SBRD8340G, SBRD8350G, SBRD8360G

MBRD320, MBRD340 and MBRD360 are Preferred Devices
ELECTRICAL CHARACTERISTICS
Characteristic Maximum Instantaneous Forward Voltage (Note 3) iF = 3 Amps, TC = +25C iF = 3 Amps, TC = +125C iF = 6 Amps, TC = +25C iF = 6 Amps, TC = +125C Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = +25C) (Rated dc Voltage, TC = +125C) 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. Symbol VF Value 0.6 0.45 0.7 0.625 0.2 20 Unit V

MBR1530CT;MBR1535CT;MBR1540CT;MBR1545CT;MBR1550CT;中文规格书,Datasheet资料

MBR1530CT;MBR1535CT;MBR1540CT;MBR1545CT;MBR1550CT;中文规格书,Datasheet资料

MBR1530CT - MBR1560CT15A SCHOTTKY BARRIER RECTIFIERFeaturesPin 1Pin 3Pin 2Maximum Ratings and Electrical Characteristics@ T A = 25°C unless otherwise specified·Schottky Barrier Chip·Guard Ring Die Construction for Transient Protection·Low Power Loss, High Efficiency ·High Surge Capability·High Current Capability and Low Forward Voltage Drop ·For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications ·Lead Free Finish, RoHS Compliant (Note 3)Mechanical Data·Case: TO-220AB·Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0·Moisture Sensitivity: Level 1 per J-STD-020C ·Terminals: Finish – Bright Tin. Solderable per MIL-STD-202, Method 208·Polarity: As Marked on Body ·Marking: Type Number ·Weight: 2.24 grams (approx.)Single phase, half wave, 60Hz, resistive or inductive load.For capacitive load, derate current by 20%.Notes:1. Thermal resistance junction to case mounted on heatsink.a2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.3.RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.0.11.010500.20.40.60.81.0I ,I N S T A N T A N E O U S F W D C U R R E N T (A )F V ,INSTANTANEOUS FORWARD VOLTAGE (V)Fig.2Typical Forward CharacteristicsF050100150200250300110100I ,P E A K F O R W A R D S U R G E C U R R E N T (A )F S M NUMBER OFCYCLES AT 60HzFig.3Max Non-Repetitive Surge Current100100040000.11.010100C ,C A P A C I T A N C E (p F )T V ,REVERSE VOLTAGE (V)Fig.4Typical Total Capacitance (per element)R 0.0010.010.11.01020406080100120140I ,I N S T A N T A N E O U S R E V E R S E C U R R E N T (m A )R PERCENT OF RATED PEAK REVERSE VOLTAGE (%)Fig.5Typical Reverse Characteristics04850100150I ,A V E R A G E F O R W A R D C U R R E N T(A )(A V )T ,CASE TEMPERATURE (C)Fig.1Forward Current Derating CurveC °121620Ordering Information(Note 4)Notes: 4. For Packaging Details, go to our website at /datasheets/ap02007.pdf.分销商库存信息:DIODESMBR1530CT MBR1535CT MBR1540CT MBR1545CT MBR1550CT MBR1560CT。

MBR3060中文资料

MBR3060中文资料
元器件交易网
MCC
Features
• • • •

omponents 21201 Itasca Street Chatsworth !"# $
% !"#
Maximum Ratings
• • Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C Maximum Recurrent Peak Reverse Voltage 20V 30V 35V 40V 45V 60V 80V 100V Maximum DC Blocking Voltage 20V 30V 35V 40V 45V 60V 80V 100V
MCC
Figure 2 Forward Derating Curve
15
Single Phase, Half Wave 60Hz Resistive or Inductive Load 0 50 75 100 °C Average Forward Rectified Current - Amperes versus Ambient Temperature - °C 125 150 175
Figure 3 Junction Capacitance
1000 600 400 200 pF 100 60 40 20 10 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 400 Junction Capacitance - pF versus Reverse Voltage - Volts 1000 TJ=25°C
MCC
Figure 5 Peak Forward Surge Current 400

MBRB40250TG;中文规格书,Datasheet资料

MBRB40250TG;中文规格书,Datasheet资料

MBR40250, MBR40250T, MBRF40250T, MBRB40250T
TYPICAL CHARACTERISTICS
100
100
IF, MAXIMUM FORWARD CURRENT (A)
TJ = 150°C
TJ = 125°C 10
TJ = 100°C TJ = 25°C
TJ = 150°C
• Power Supply • Power Management • Automotive • Instrumentation
Mechanical Characteristics
• Case: Epoxy, Molded • Weight: 1.9 grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal
AKA
1 3
4
D2PAK
CASE 418AJ
1
4 3
AY WW
B40250TG AKA
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Benefits
• Reduces or Eliminates Reverse Recovery Oscillations • Minimizes Need for EMI Filtering • Reduces Switching Losses • Improved Efficiency

MBRB3045CT-1G;MBR3045STG;MBR3045ST;中文规格书,Datasheet资料

MBRB3045CT-1G;MBR3045STG;MBR3045ST;中文规格书,Datasheet资料

MBR3045ST,MBRB3045CT-1SWITCHMODE ™Power RectifierFeatures and Benefits•Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating •45 V Blocking V oltage •Low Forward V oltage Drop•175°C Operating Junction Temperature •Pb −Free Packages are AvailableApplications•Power Supply − Output Rectification •Power Management •InstrumentationMechanical Characteristics•Case: Epoxy, Molded•Weight (Approximately):1.9 Grams (TO −220AB)1.5 Grams (TO −262)•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable•Lead Temperature for Soldering Purposes:260°C Max. for 10 Seconds•Epoxy Meets UL 94 V −0 @ 0.125 inMAXIMUM RATINGSRatingSymbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 45VAverage Rectified Current Per Device (T C = 130°C)Per DiodeI F(AV)3015A Peak Repetitive Forward Current, per Diode (Square Wave, V R = 45 V, 20 kHz)I FRM 30A Non −Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions,Halfwave, Single Phase, 60 Hz)IFSM150APeak Repetitive Reverse Current, per Diode (2.0 m s, 1.0 kHz)I RRM 2.0A Storage Temperature RangeT stg −65 to +175°C Operating Junction Temperature (Note 1)T J −65 to +175°C Peak Surge Junction Temperature (Forward Current Applied)T J(pk)175°CVoltage Rate of Change (Rated V R )dv/dt10,000V/m sStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.The heat generated must be less than the thermal conductivity from Junction −to −Ambient: dP D /dT J < 1/R q JA .TO −220AB CASE 221A STYLE 6SCHOTTKY BARRIERRECTIFIER 30 AMPERES 45 VOLTS312, 4MARKING DIAGRAMSA = Assembly Location Y = YearWW = Work WeekAKA = Polarity Designator G = Pb −Free DeviceI 2PAK (TO −262)CASE 418D PLASTICAYWW B3045CTG AKASee detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.ORDERING INFORMATIONTHERMAL CHARACTERISTICS (Per Diode)CharacteristicSymbol Value Unit Thermal Resistance, Junction to CaseR θJC1.5°C/WELECTRICAL CHARACTERISTICS (Per Diode)Instantaneous Forward Voltage (Note 2)(i F = 15 Amp, T C = 25°C)(i F = 15 Amp, T C = 125°C)(i F = 30 Amp, T C = 25°C)(i F = 30 Amp, T C = 125°C)v F0.620.570.760.72VoltsInstantaneous Reverse Current (Note 2)(V R = 45 Volts, T C = 25°C)(V R = 45 Volts, T C = 125°C)I R0.240mA2Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤ 2.0%Figure 1. Typical Forward VoltageFigure 2. Maximum Reverse Currentv F , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)100010V R , REVERSE VOLTAGE (VOLTS)0.20.040.02i F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A M P S )I 1.00.10.41.00.1, R E V E R S E C U R R E N T (m A )R 4.02.01020100402001000.01Figure 3. Typical Reverse Currentv F , MAXIMUM FORWARD VOLTAGE (VOLTS)100010i F , M A X I M U M F O R W A R D C U R R E N T (A M P S )1.00.1100Figure 4. Current Derating, Case Figure 5. Current Derating, AmbientFigure 6. Forward Power Dissipation 110T C , CASE TEMPERATURE (°C)208.04.00T A , AMBIENT TEMPERATURE (°C)2024168.0040I F , AVERAGE FORWARD CURRENT (AMPS)3216128.04.00I I F (A V ), A V E R A G E F O R W A R D C U R R E N T (A M P S )1201301401706080180P 28, A V E R A G E F O R W A R D C U R R E N T (A M P S )F (A V )202416122420124.0100120140, A V E R A G E P O W E R D I S S I P A T I O N (W A T T S )F (A V )Figure 7. Capacitance0V R , REVERSE VOLTAGE (V)100010103040C , C A P A C I T A N C E (p F )100501000020150160160ORDERING INFORMATIONDevicePackage Shipping MBR3045ST TO −22050 Units/Rail MBR3045STG TO −220(Pb −Free)50 Units/Rail MBRB3045CT −1TO −26250 Units/Rail MBRB3045CT −1GTO −262(Pb −Free)50 Units/RailTO −220CASE 221A −09ISSUE AFNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.STYLE 6:PIN 1.ANODE 2.CATHODE 3.ANODE 4.CATHODEDIM MIN MAX MIN MAX MILLIMETERS INCHES A 0.5700.62014.4815.75B 0.3800.4059.6610.28C 0.1600.190 4.07 4.82D 0.0250.0350.640.88F 0.1420.161 3.61 4.09G 0.0950.105 2.42 2.66H 0.1100.155 2.80 3.93J 0.0140.0250.360.64K 0.5000.56212.7014.27L 0.0450.060 1.15 1.52N 0.1900.210 4.83 5.33Q 0.1000.1202.543.04R 0.0800.110 2.04 2.79S 0.0450.0551.15 1.39T 0.2350.255 5.97 6.47U 0.0000.0500.00 1.27V 0.045--- 1.15---Z---0.080--- 2.04FSEATINGPLANEI 2PAK (TO −262)CASE 418D −01ISSUE DNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.D DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.3350.3808.519.65B 0.3800.4069.6510.31C 0.1600.185 4.06 4.70D 0.0260.0350.660.89E 0.0450.055 1.14 1.40G 0.100 BSC 2.54 BSC H 0.0940.110 2.39 2.79J 0.0130.0250.330.64S 0.390 REF 9.90 REF V 0.0450.070 1.14 1.78W0.5220.55113.2514.00MBM 0.13 (0.005)T F 0.122 REF 3.10 REF K 0.5000.56212.7014.27ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATIONSWITCHMODE is a trademark of Semiconductor Components Industries, LLC.分销商库存信息:ONSEMIMBRB3045CT-1G MBR3045STG MBR3045ST。

RF3603D;中文规格书,Datasheet资料

RF3603D;中文规格书,Datasheet资料

Electrical Characteristics Electrical Connections CharacteristicSymNotes Min TypMax UnitsCenter Frequency f C 316.4MHz 1 dB BandwidthBW 113MHzMaximum Insertion Loss, 310.0 to 319.5 MHz IL MAX1.82.2dBAmplitude Ripple, p-p, 310.0 to 319.5 MHz1.0Rejection Referenced to Insertion Loss at 315.0 MHz: DC to 306 MHz 3740 336 to 366 MHz 1821 366 to 966 MHz 5255 966 to 1266 MHz 4649 1266 to 2000 MHz 2831 Source Impedance Z S 50Ω Balanced Load Impedance Z L150Ω Case StyleSM3838-8 3.8 x 3.8 mm Nominal FootprintLid Symbolization (Y=year, WW=week, S=shift) dot=pin 1 indicator 886, YWWS Standard Reel Quantity Reel Size 7 Inch 500 Pieces/Reel Reel Size 13 Inch3000 Pieces/ReelConnectionTerminalsSingle-ended Port 6 Balanced Port 1, 3 Case Ground 4, 5, 7, 8No Connection2•310.0 to 319.5 MHz Filter•Optimized for use with the TRC105 Transceiver •Balanced 150 ohm IC Interface•Complies with Directive 2002/95/EC (RoHS)Absolute Maximum Ratings RatingValueUnitsInput Power Level +15dBm DC Voltage±5V Operating Temperature Range-40 to +85°C Storage Temperature Range in Tape and Reel-40 to +85°C Maximum Soldering Profile, 5 cycles/ 10 seconds maximum265°C316.4 MHz SAW FilterRF3603D1.Unless noted otherwise, all specifications apply over the operating temperature range with filter soldered to the specified demonstration board with impedance matching to 50 Ω and measured with 50 Ω network analyzer.2.Unless noted otherwise, all frequency specifications are referenced to the nominal center frequency, fc.3.Rejection is measured as attenuation below the minimum IL point in the passband. Rejection in final user application is dependent on PCB layout and external impedance matching design. See Application Note No. 42 for details.4.The design, manufacturing process, and specifications of this filter are subject to change. and international patents may apply.6.RFM, stylized RFM logo, and RF Monolithics, Inc. are registered trademarks of RF Monolithics, Inc.PbCAUTION: Electrostatic Sensitive Device. Observe precautions for handling.Notes:RF3603D Broadband Response, 200 to 2000 MHzRF3603D Response, 216.4 to 416.4 MHzRF3603D Response, 266.4 to 366.4 MHzRF3603D Passband ResponseRF3603D Input Impedance PlotRF3603D Balanced Output Impedance PlotCase DimensionsDimensionmm Inches Min Nom Max Min Nom Max A 3.6 3.8 4.00.1420.1500.157B 3.6 3.8 4.00.1420.1500.157C 0.90 1.00 1.10.0350.0400.043D 0.800.90 1.00.0310.0350.040E 0.90 1.00 1.100.0350.0400.043F 0.500.600.700.0200.0240.028G 2.39 2.54 2.690.0900.1000.110H1.401.752.050.0550.0690.080MaterialsSolder Pad Plating 0.3 to 1.0 µm Gold over 1.27 to 8.89 µm Nickel Lid Plating 2.0 to 3.0 µm Nickel Body Al 2O 3 CeramicPb Free8-Terminal Ceramic Surface-Mount Case3.8 X 3.8 mm Nominal FootprintTOP VIEW BOTTOM VIEWTape and Reel Specifications“B“Nominal Size Quantity Per ReelInches millimeters7178500133303000COMPONENT ORIENTATION and DIMENSIONSCarrier Tape DimensionsAo 4.25 mmBo 4.25 mmKo 1.30 mmPitch8.0 mmW12.0mm分销商库存信息: RFMRF3603D。

iw3616、3617、3630datasheet中文翻译(绝对真实)

iw3616、3617、3630datasheet中文翻译(绝对真实)

产品特色大幅简化离线式LED驱动器设计●单级功率因数校正(PFC)与精确恒流(CC)输出相结合●输入/输出电容和变压器体积小●一次侧反馈控制,无需光耦电路,简化了电路设计●简化初级侧PWM调光接口●符合IEC61000-3-2标准高效节能和高兼容性●大幅提升效率,可达到85%以上●减少元件数量●总谐波失真<15%且PF>0.95●前沿、后沿和数字调光器●传感器和定时器精确稳定的性能●LED负载恒流精度不低于±5%●支持LED负载热插拔●1%-100%宽范围调光,调光无闪烁先进的保护及安全特性●通过自动重启动提供短路保护●开路故障检测模式●自动热关断重启动无论在PCB板上还是在封装上,都保证高压漏极引脚与其他所有信号引脚之间满足高压爬电要求应用●LED离线固态照明说明G7617 是一款的适用于LED调光控制的离线式两级交流/直流电源控制器,是适用于25W 输出功率的可调光LED 灯具的最优之选。

G7617符合电磁兼容性(EMC) IEC61000-3-2 标准,在120V AC或230V AC输入电压下其功率因数(PF) 可达到0.95 以上。

采用先进的数控技术来检测调光器的类型和相位,为调光器提供动态阻抗的同时可调节LED发光亮度,自动检测调光器类型和相位,从而实现了业内与模拟及数字调光器最广泛的兼容性。

G7617工作于准谐振工作模式,工作效率高,可工作于前沿后沿调光模式,也可工作于R 型、R-C型或R-L型调光控制模式。

G7617 符合热插拔LED 模块的固态照明行业标准Zhaga,同时还集成了调光功能的映射选项(位于白炽灯替代灯的NEMA SSL6 调光曲线内)。

G7617 系列有两个版本:针对120V AC输入应用进行优化的G7617-00 和针对230V AC 应用进行优化的G7617-01。

订购信息应用框图图1典型应用内部框图Vcc VinVcbVT CFGASU BisenseBdrvFdrvFisensePGNDAGND C O R E图2 内部框图引脚功能描述BV SENSE V IN BI SENSE B DRV CFG ASU V CCV CBV TFV SENSEFI SENSEF DRVAGNDPGND 图3. 引脚布局BV SENSE引脚:PFC电感电压反馈点,用于感知Boost电感的磁通状态。

WP1503SRCF;中文规格书,Datasheet资料

WP1503SRCF;中文规格书,Datasheet资料

分销商库存信息:
KINGBRIGHT WP1503SRC/F
Electrical / Optical Characteristics at TA=25°C
Symbol λpeak λD [1] Δλ1/2 C VF [2] IR Parameter Peak Wavelength Dominant Wavelength Spectral Line Half-width Capacitance Forward Voltage Reverse Current Device Super Bright Red Super Bright Red Super Bright Red Super Bright Red Super Bright Red Super Bright Red Typ. 660 640 20 95 1.85 2.5 10 Max. Units nm nm nm pF V uA Test Conditions IF=20mA IF=20mA IF=20mA VF=0V;f=1MHz IF=20mA VR = 5V
/
SPEC NO: DSAF2387 APPROVED: WYNEC
REV NO: V.5 CHECKED: Allen Liu
DATE: MAR/02/2011 DRAWN: J.Yu
PAGE: 6 OF 6 ERP: 1101001679-01
/
Super Bright Red
WP1503SRC/F
SPEC NO: DSAF2387 APPROVED: WYNEC
REV NO: V.5 CHECKED: Allen Liu
DATE: MAR/02/2011 DRAWN: J.Yu
PAGE: 3 OF 6 ERP: 1101001679-01

Getac B360 Pro配件说明书

Getac B360 Pro配件说明书

Rugged Mobile Computing SolutionsGET AC B360 Pro配件说明书手册强韧坚固笔记本电脑极大性能更安全强韧坚固B360 PRO备用主电池特点和优点Getac B360Pro备用主电池用于交流电源适配器无法连接时,给您的设备提供主电源。

它设有集成电源指示灯,状态检查按钮,让用户一按了解电源容量状态。

产品信息产品照片电池类型:锂离子电池设计:3S2P输出电压:10.8V容量:标准6900mAh;最小6600mAh尺寸:长141.05x宽73.8x高22.3mm重:345.6gSKU IDSKU ID:GBM6X590W交流电源适配器特点和优点此适配器用交流电给B360和内部电池充电。

适配器含有特定国家的电源线,可匹配您所在国家的本地电源插座。

产品信息产品照片输入:100V-240V输出:19V, 4.74 A, 90W尺寸:长129x宽53x高30.5mm重:368g输入电线长度:1830mm输出电线长度:1800mmSKU IDSKU ID:GAA9*5*欧盟地区=E,美国地区=U,英国地区=K,澳大利亚地区=A,中国大陆地区= C,台湾地区=T—电源线90W MIL-STD-461交流电源适配器特点和优点该MIL-STD-461G交流电源适配器已通过严格的军用标准和试验规格,确保适配器的传导发射、传导敏感度、辐射发射和辐射敏感度能够满足电磁干扰控制的要求。

产品信息产品照片输入:115V-230V, 1.6A 50~60Hz输出:19V, 4.74A, 90W尺寸:长170x宽75x高45mm重:880g(无电源线)输入电线长度:1530mm输出电线长度:1800mmSKU IDSKU ID:GAAG*5*欧盟地区=E,美国地区=U,英国地区=K,中国大陆地区=C-电源线120W办公室扩展坞适配器特点和优点这款120W交流电源适配器专门与办公室扩展坞和B360Pro搭载的分立元件图形处理器一起使用,能够高效地为您的设备供电。

MBRM140T3G;MBRM140T1G;MBRM140T3;中文规格书,Datasheet资料

MBRM140T3G;MBRM140T1G;MBRM140T3;中文规格书,Datasheet资料

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Lead (Anode) (Note 1) Thermal Resistance, Junction−to−Tab (Cathode) (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10 Symbol Rtjl Rtjtab Rtja Value 35 23 277 Unit C/W
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 110C) Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 110C) Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) Storage Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) Symbol VRRM VRWM VR IO IFRM IFSM Tstg TJ dv/dt Value 40 Unit V

MBRA410ET3-D.PDF 安森美 MBR410ET3 表面贴装肖特基功率整流器 数据手册

MBRA410ET3-D.PDF   安森美 MBR410ET3 表面贴装肖特基功率整流器 数据手册

MBRS410ET3Surface MountSchottky Power RectifierThis device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “ORing” of multiple supply voltages and any other application where performance and size are critical.Features•Very Low V F Accompanied by Low I R•1st in the Market Place with a 10 V R Schottky Rectifier •Small Compact Surface Mountable Package with J−Bend Leads •Rectangular Package for Automated Handling•Highly Stable Oxide Passivated Junction•Designed for Low Leakage•Excellent Ability to Withstand Reverse Avalanche Energy Transients •Guard−Ring for Stress Protection•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS CompliantMechanical Characteristics•Case: Epoxy, Molded•Weight: 217 mg (Approximately)•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable•Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds•Polarity: Polarity Band on Plastic Body Indicates Cathode Lead •ESD Ratings: Machine Model = CHuman Body Model = 3BMAXIMUM RATINGSRating Symbol Value UnitPeak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRMV RWMVR10VAverage Rectified Forward Current(@ T L = 130°C)I O 4.0ANon−Repetitive Peak Surge Current(Surge Applied at Rated Load ConditionsHalfwave, Single Phase, 60 Hz)I FSM250A Operating Junction Temperature T J−65 to +150°C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.Device Package Shipping†ORDERING INFORMATIONMBRS410ET3SMC2500/T ape & Reel SCHOTTKY BARRIERRECTIFIERS4.0 AMPERES, 10 VOLTSB4E1= Specific Device CodeA= Assembly Location*Y= YearWW= Work WeekG= Pb−Free Package(Note: Microdot may be in either location)MARKING DIAGRAMMBRS410ET3G SMC(Pb−Free)2500/T ape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.SMC 2−LEADCASE 403AC*The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank.THERMAL CHARACTERISTICSCharacteristicSymbol 5 mm x 5 mm (Note 2)1 Inch x 1/2 inchUnit Thermal Resistance,Junction −to −Lead Thermal Resistance,Junction −to −AmbientR q JL R q JA121097.059°C/WELECTRICAL CHARACTERISTICSMaximum Instantaneous Forward Voltage (Note 1)V FT J = 25°C T J = 100°C V(I F = 2.0 A)(I F = 4.0 A)(I F = 8.0 A)0.4750.5000.5250.3700.3950.430Maximum Instantaneous Reverse Current (Note 1)I R T J = 25°C T J = 100°C m A (Rated dc Voltage, V R = 5.0 V)(Rated dc Voltage, V R = 10 V)5015020004000Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.1.Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤2%.2.Mounted with Minimum Recommended Pad Size, PC Board FR4.TYPICAL ELECTRICAL CHARACTERISTICSFigure 1. Typical Forward Voltage100.11I F , I NS T A N T A N E O U S F O R WAR D C U R R E N T (A )V F , INSTANTANEOUS FORWARD VOLTAGE (V)Figure 2. Maximum Forward VoltageV F , MAXIMUM INSTANTANEOUS FORWARDVOLTAGE (V)I F , M A X I M U M I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )Figure 3. Typical Reverse Current 1.0E −I R , R E V E R S E C U R R E N T (A )V R , REVERSE VOLTAGE (V)Figure 4. Typical Capacitance1.0E −10C , C A P A C I T A N C E (p F )V R , REVERSE VOLTAGE (V)1001.0E −1.0E −1.0E −1.0E −TYPICAL ELECTRICAL CHARACTERISTICS (continued)Figure 5. Current Derating, Junction −to −Lead05I F , A V E R A G E F O R W A R D C U R R E N T (A )T L , LEAD TEMPERATURE (°C)Figure 6. Forward Power Dissipation3.501.5I F(AV), AVERAGE FORWARD CURRENT (A)P F O , A V E R A G E P O W E R D I S S I P A T I O N (W )Figure 7. Thermal Response, Junction −to −Ambient (min pad)123496780.512.523t, TIME (S)R (t ), T R A N S I E N T T H E R M A L R E S I S T A N C E (°C /W )Figure 8. Thermal Response, Junction −to −Ambient (1 inch pad)t, TIME (S)R (t ), T R A N S I E N T T H E R M A L R E S I S T A N C E (°C /W )SMC 2−LEAD CASE 403AC ISSUE BDATE 27 JUL 2017may or may not be present.*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.LSCALE 1:1MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor thePUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORTNorth American Technical Support:Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910LITERATURE FULFILLMENT :Email Requests to:*******************onsemi Website: Europe, Middle East and Africa Technical Support:Phone: 00421 33 790 2910For additional information, please contact your local Sales Representative。

MBRA260 D MBRAF260T3G, NRVBAF260T3G 表面贴装肖特基功率整流器 数

MBRA260 D MBRAF260T3G, NRVBAF260T3G 表面贴装肖特基功率整流器 数

MBRAF260T3G,NRVBAF260T3GSurface MountSchottky Power RectifierThis device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features•Low Profile Package for Space Constrained Applications •Rectangular Package for Automated Handling•Highly Stable Oxide Passivated Junction•150°C Operating Junction Temperature•Guard−Ring for Stress Protection•NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable•These are Pb−Free and Halide−Free DevicesMechanical Charactersistics•Case: Epoxy, Molded, Epoxy Meets UL 94, V−0•Weight: 95 mg (approximately)•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable•Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds•Cathode Polarity Band•Device Meets MSL 1 Requirements•ESD Ratings: Machine Model = CHuman Body Model = 3BDevice Package Shipping†ORDERING INFORMATIONSMA−FLCASE 403AASTYLE 6SCHOTTKY BARRIERRECTIFIER2.0 AMPERE60 VOLTS†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.MBRAF260T3G SMA−FL(Pb−Free)5000 / Tape & Reel RAG= Specific Device CodeA= Assembly LocationY= YearWW= Work WeekG= Pb−Free PackageMARKING DIAGRAMNRVBAF260T3G SMA−FL(Pb−Free)5000 / Tape & ReelMAXIMUM RATINGSRating Symbol Value UnitPeak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRMV RWMV R60VAverage Rectified Forward Current (At Rated V R, T L = 120°C)I O2.0APeak Repetitive Forward Current(Rated V R, Square Wave, 20 kHz) T L = 90°C I FRM4.0ANon−Repetitive Peak Surge Current(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)I FSM60AStorage Temperature Range T stg−55 to +150°C Operating Junction Temperature T J−55 to +150°CVoltage Rate of Change (Rated V R, T J = 25°C)dv/dt10,000V/m sControlled Avalanche Energy (see test conditions in Figures 6 and 7)W AVAL10mJ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.THERMAL CHARACTERISTICSCharacteristic Symbol Value UnitThermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1)R q JLR q JA2590°C/W1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.ELECTRICAL CHARACTERISTICSCharacteristic Symbol Value UnitMaximum Instantaneous Forward Voltage(Note 2) (i F = 1.0 A)(i F = 2.0 A)v F T J = 25°C T J = 125°C V0.510.630.4750.55Maximum Instantaneous Reverse Current (Note 2) (V R = 60 V)I R T J = 25°C T J = 125°C mA0.220Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.2.Pulse Test: Pulse Width ≤ 250 m s, Duty Cycle ≤ 2.0%.Figure 1. Typical Forward Voltage100.11I F ,I N S T A N T A N E O U S F O R W A RD C U R RE N T (A M P S )V F , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)Figure 2. Maximum Forward Voltage100.11V F , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)I F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A M P S )Figure 3. Typical Reverse Current I R , R E V E R S E C U R R E N T (A M P S )V R , REVERSE VOLTAGE (VOLTS)Figure 4. Typical CapacitanceC , C A P A C I T A N C E (p F )V R , REVERSE VOLTAGE (VOLTS)100010100Figure 5. Typical Transient Thermal Response, Junction−to−Ambientt, PULSE TIME (S)R (t ), T Y P I C A L T R A N S I E N T T H E R M A L R E S I S T A N C E (°C /W )BV DUTI L I DV DDt0t1t2t Figure 6. Test Circuit Figure 7. Current−Voltage WaveformsThe unclamped inductive switching circuit shown in Figure 6 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened.When S1 is closed at t0 the current in the inductor I L ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BV DUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2.By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the V DD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from thisequation that if the V DD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2).W AVAL[12LI2LPKBVW AVAL[12LI2LPKEQUATION (1):EQUATION (2):SMA −FL CASE 403AA −01ISSUE ODATE 02 MAR 2011LSCALE 2:1SOLDER FOOTPRINT*DIMENSIONS: MILLIMETERS*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.1.30RECOMMENDED NOTES:1.DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.2.CONTROLLING DIMENSION: MILLIMETERS.DIM MIN MAX MILLIMETERS A 0.90 1.10b 1.25 1.65c 0.150.30D 2.40 2.80TOP VIEWBOTTOM VIEW2XE 4.80 5.40E1 4.00 4.60L0.70 1.10MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor thePUBLICATION ORDERING INFORMATIONTECHNICAL SUPPORTNorth American Technical Support:Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910LITERATURE FULFILLMENT :Email Requests to:*******************onsemi Website: Europe, Middle East and Africa Technical Support:Phone: 00421 33 790 2910For additional information, please contact your local Sales Representative。

  1. 1、下载文档前请自行甄别文档内容的完整性,平台不提供额外的编辑、内容补充、找答案等附加服务。
  2. 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
  3. 3、如文档侵犯您的权益,请联系客服反馈,我们会尽快为您处理(人工客服工作时间:9:00-18:30)。

MBRS360T3G,MBRS360BT3G,NRVBS360T3G,NRVBS360BT3GSurface MountSchottky Power RectifierThis device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, oras free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Features•Small Compact Surface Mountable Package with J−Bend Leads •Rectangular Package for Automated Handling•Highly Stable Oxide Passivated Junction•Excellent Ability to Withstand Reverse Avalanche Energy Transients •Guard−Ring for Stress Protection•NRVBS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable•These are Pb−Free DevicesMechanical Characteristics•Case: Epoxy, Molded, Epoxy Meets UL 94 V−0•Weight:217 mg (Approximately), SMC95 mg (Approximately), SMB•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable•Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds•Polarity: Notch in Plastic Body Indicates Cathode Lead •Device Meets MSL 1 Requirements•ESD Ratings:♦Machine Model, C♦Human Body Model, 3BDevice Package Shipping†ORDERING INFORMATIONSMCCASE 403SCHOTTKY BARRIERRECTIFIERS3.0 AMPERES, 60 VOLTS†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.MBRS360T3G SMC(Pb−Free)2,500 /Tape & Reel B36= Specific Device CodeA= Assembly LocationY= YearWW= Work WeekG= Pb−Free Package(Note: Microdot may be in either location)MARKING DIAGRAMSAYWWB36GGSMBCASE 403AAYWWB36GGMBRS360BT3G SMB(Pb−Free)2,500 /Tape & Reel NRVBS360T3G SMC(Pb−Free)2,500 /Tape & Reel2,500 /Tape & Reel NRVBS360BT3G SMB(Pb−Free)MAXIMUM RATINGSRatingSymbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking VoltageV RRM V RWM V R 60VAverage Rectified Forward CurrentI F(AV) 3.0 @ T L = 137°C 4.0 @ T L = 127°CA Nonrepetitive Peak Surge Current(Surge applied at rated load conditions halfwave, single phase, 60 Hz)I FSM 125A Storage Temperature RangeT stg −65 to +175°C Operating Junction Temperature (Note 1)T J−65 to +175°CStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.The heat generated must be less than the thermal conductivity from Junction −to −Ambient: dP D /dT J < 1/R q JA .THERMAL CHARACTERISTICSCharacteristicSymbol Value Unit Thermal Resistance, Junction −to −Lead (Note 2)SMC Package SMB PackageR q JL1115°C/WThermal Resistance, Junction −to −Ambient (Note 2)SMC Package SMB PackageR q JA136145°C/WThermal Resistance, Junction −to −Ambient (Note 3)SMC PackageSMB Package (Note 4)R q JA7173°C/WELECTRICAL CHARACTERISTICSMaximum Instantaneous Forward Voltage (Note 5)(i F = 3.0 A, T J = 25°C)V F 0.740V Maximum Instantaneous Reverse Current (Note 5)(Rated dc Voltage, T J = 25°C)(Rated dc Voltage, T J = 100°C)i R0.1510mA2.Mounted with minimum recommended pad size, PC Board FR4.3. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.4.Typical Value; 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.5.Pulse Test: Pulse Width = 300 m s, Duty Cycle ≤2.0%.V F , INSTANTANEOUS FORWARD VOLTAGE (V)Figure 1. Typical Forward Voltage Figure 2. Maximum Forward VoltageI F , I N S T A N T A N E O U S F OR W A R D C U R R E N T (A )V F , INSTANTANEOUS FORWARD VOLTAGE (V)0.010.11100.010.1110I F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )V R , INSTANTANEOUS REVERSE VOLTAGE (V)Figure 3. Typical Reverse CurrentFigure 4. Maximum Reverse CurrentI R , I N S T A N T A N E O U S R E V E R S E C U R R E N T (A )V R , INSTANTANEOUS REVERSE VOLTAGE (V)I R , I N S T A N T A N E OU S R E V E R S E C U R R E N T (A )1.0E −1.0E −1.0E −1.0E −1.0E −1.0E −1.0E −1.0E+001.0E −1.0E −1.0E −1.0E −1.0E −1.0E −1.0E+00T L , LEAD TEMPERATURE (°C)Figure 5. Current DeratingFigure 6. Forward Power DissipationI F (A V ), A V E R A G E F O R W A R D C U R R E N T (A )I O , AVERAGE FORWARD CURRENT (A)P F O , A V E R A G E P O W E R D I S S I P A T I O N (W )Figure 7. Typical CapacitanceV R , REVERSE VOLTAGE (V)C , C A P A C I T A N C E (p F )t, TIME (s)Figure 8. Thermal Response, Junction −to −Ambient, SMC Packager (t ), T R A N S I E N T T H E R M A L R E S P O N S E 0.000010.00010.0010.01110010000.110Figure 9. Typical Thermal Response, Junction −to −Ambient, SMB PackagePULSE TIME (s)0.010.1110100R (t ) (°C /W )SMC PLASTIC PACKAGE CASE 403−03ISSUE EDIMAMINNOM MAX MINMILLIMETERS1.902.13 2.410.075INCHESA10.050.100.150.002b 2.92 3.00 3.070.115c0.150.230.300.006D 5.59 5.84 6.100.220E 6.60 6.867.110.260L0.76 1.02 1.270.0300.0840.0950.0040.0060.1180.1210.0090.0120.2300.2400.2700.2800.0400.050NOM MAX7.757.948.130.3050.3130.320H EǒmmǓ*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*cNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.4.403-01 THRU -02 OBSOLETE, NEW STANDARD 403-03.0.020 REF0.51 REFL1SMBCASE 403A −03ISSUE HcNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.ǒmm inchesǓSCALE 8:1*For additional information on our Pb −Free strategy and solderingdetails, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.SOLDERING FOOTPRINT*DIM A MIN NOM MAX MIN MILLIMETERS1.902.20 2.280.075INCHES A10.050.100.190.002b 1.96 2.03 2.200.077c 0.150.230.310.0063.30 3.56 3.950.130E4.06 4.32 4.600.160L 0.761.02 1.600.0300.0870.0900.0040.0070.0800.0870.0090.0120.1400.1560.1700.1810.0400.063NOM MAX 5.21 5.44 5.600.2050.2140.220H E 0.51 REF0.020 REFD L1ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur.Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries,affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATION分销商库存信息:ONSEMIMBRS360BT3G MBRS360T3G。

相关文档
最新文档