MMST4401T146;SST4401T116;中文规格书,Datasheet资料

Transistors
Rev.B 1/3
NPN Medium Power Transistor (Switching)
SST4401 / MMST4401
z Features
1) BV CEO >40V (I C =1mA)
2) Complements the SST4403 / MMST4403.
z Package, marking, and packaging specifications
Part No.Packaging type Marking Code
Basic ordering unit (pieces)
SST4401SST3R2X T1163000
MMST4401SMT3R2X T1463000
z Absolute maximum ratings (T a=25°C)
Parameter
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Junction temperature
Storage temperature
Symbol V CBO V CEO V EBO I C
Tj
Tstg Limits 604060.6150
−55 to +150
Unit V V V A Collector power dissipation
P C
0.2
0.35
W W ˚C ˚C
∗ Mounted on a 7 5 0.6mm CERAMIC SUBSTRATE
+
+
z Dimensions (Unit : mm)
z Electrical characteristics (T a=25°C)
Parameter
Symbol Min.Typ.Max.Unit Conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current
BV CBO BV CEO BV EBO I CBO I EBO 60406−−−−−−−−−−0.10.1V V V µA µA I C =100µA I C =1mA I E =100µA V CB =35V V EB =5V
−− 1.2Base-emitter saturation voltage
V BE(sat)
−−0.95V
−−0.75I C /I B =500mA/50mA Collector-emitter saturation voltage V CE(sat)−−0.4V I C /I B =150mA/15mA I C /I B =500mA/50mA I C /I B =150mA/15mA 40
−−100−300DC current transfer ratio
h FE
80−−−40
−−20−−V CE =1V, I C =0.1mA V CE =1V, I C =1mA V CE =1V, I C =10mA V CE =1V, I C =150mA V CE =2V, I C =500mA
Transition frequency
Collector output capacitance f T Cob 250−−−−6.5MHz pF V CE =10V, I E = −20mA, f =100MHz V CB =10V, f =100kHz Emitter input capacitance Cib −−30pF V EB =0.5V, f =100kHz
Delay time td −−15ns V CC =30V, V EB(OFF)=2V, I C =150mA, I B1=15mA V CC =30V, V EB(OFF)=2V, I C =150mA, I B1=15mA Rise time tr −−20ns Storage time tstg −−225ns V CC =30V, I C =150mA, I B1=-I B2=15mA V CC =30V, I C =150mA, I B1=-I B2=15mA
Fall time
tf
−
−
30
ns
Transistors
Rev.B 2/3
z Electrical characteristic curves
C O L L E C T O R C U R R E N T : I c (m A )
COLLECTOR-EMITTER VOLTAGE : V CE (V)
Fig.1 Grounded emitter output characteristics
D C C U R R
E N T G A I N : h
F E
COLLECTOR CURRENT : Ic(mA)
Fig.3 DC current gain vs. collector current(Ι)
C O L L E C T O R E M I T T E R S A T U R A T I O N V O L T A G E : V C E (s a t )(V )
COLLECTOR CURRENT : Ic(mA)
Fig.2 Collector-emitter saturation voltage vs. collector current
D C C U R R
E N T G A I N : h
F E
COLLECTOR CURRENT : Ic(mA)
Fig.4 DC current gain vs. collector current(ΙΙ)
A C C U R R E N T G A I N : h F E
COLLECTOR CURRENT : Ic(mA)
Fig.5 AC current gain vs. collector current
B A S E E M I T T E R S A T U R A T I O N V O L T A G E : V B E (s a t )(V )
COLLECTOR CURRENT : Ic (mA)
Fig.6 Base-emitter saturation
voltage vs. collector current
Transistors
Rev.B 3/3
B A S E E M I T T E R V O L T A G E : V B E (O N )(V )
COLLECTOR CURRENT : Ic(mA)
Fig.7 Grounded emitter propagation characteristics
T U R N O N T I M E : t o n (n s )
COLLECTOR CURRENT : Ic(mA)
Fig.8 Turn-on time vs. collector current
R I S E T I M E : t r (n s )
COLLECTOR CURRENT : Ic (mA)
Fig.9 Rise time vs. collector current
S T O R A G E T I M E : t s (n s )
COLLECTOR CURRENT : Ic (mA)
Fig.10 Storage time vs. collector current
F A L L T I M E : t f (n s )
COLLECTOR CURRENT : Ic (mA)
Fig.11 Fall time vs. collector current
C A P A C I T A N C E (p F )
REVERSE BIAS VOLTAGE (V)
Fig.12 Input / output capacitance vs. voltage
C O L L E C T O R -E M I T T E R V O L T A G E : V C E (V )
COLLECTOR CURRENT : Ic (mA)
Fig.13 Gain bandwidth product
C U R R E N T G A I N -B A N
D W I D T H P R O D U C T (M H z )
COLLECTOR CURRENT : Ic (mA)
Fig.14 Gain bandwidth product vs. collector current
Appendix1-Rev2.0
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Appendix
分销商库存信息:
ROHM
MMST4401T146SST4401T116。