SOT323封装二极管

NC
K
K
NC
A A
BAT54W
K2
A
K2
A
K1 K1
BAT54AW
A2
K
A2
K
A1 A1
BAT54CW
K2
A2
K1
A2
K2
K1
A1
A1
BAT54SW
SOT-323
A 86 K
BAT54J SOD-323
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
C(pF) 10
5
2
1
1
2
VR(V)
5
10
F=1MHz Tj=25°C
20 30
Zth(j-a)/Rth(j-a) 1.00
δ = 0.5
0.10
δ = 0.2 δ = 0.1
Single pulse
0.01 1E-3
1E-2
T
tp(s) 1E-1 1E+0
δ=tp/T 1E+1
tp
1E+2
Fig. 6: Thermal resistance junction to ambient versus copper surface under each lead (Epoxy printedcircuit board FR4, copper thickness: 35µm.)
Tj(°C)
1E-2
5
10
15
20
25
30
0
25
50
75 100 125 150
Fig. 4: Junction capacitance versus reverse voltage applied (typical values).
Fig. 5: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy FR4 with recommended pad layout, e(Cu)=35µm)
Fig. 1-2: Forward voltage drop versus forward current (typical values, high level).
IFM(A)
2.00E-2 1.80E-2 1.60E-2 1.40E-2 1.20E-2 1.00E-2
Tj=100°C Tj=50°C
IF = 10 mA
IF = 30 mA
IF = 100 mA
IR ** Reverse leakage current Tj = 25°C
VR = 30 V
Tj = 100°C
Pulse test : * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2%
DYNAMIC CHARACTERISTICS (Tj = 25 °C)
BAT54SW
D78
BAT54J
86
Epoxy meets UL94,V0
Package SOT-323 SOT-323 SOT-323 SOT-323 SOD-323
Weight 0.006g 0.006g 0.006g 0.006g 0.005g
Base qty 3000 3000 3000 3000 3000
Value 550
Unit °C/W °C/W
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol
Parameters
Tests conditions
VF * Forward voltage drop
Tj = 25°C
IF = 0.1 mA
IF = 1 mA
June 1999 - Ed: 2A
Unit V A A
mW
°C °C °C
1/5
BAT54J / W / AW / CW / SW
THERMAL RESISTANCE
Symbol
Parameters
Rth (j-a) Junction to ambient (*)
SOD-323
SOT-323
(*) Mounted on epoxy board, with recommended pad layout.
D
1.52 1.8 0.06 0.071
E
1.11 1.45 0.044 0.057
H
2.3
2.7 0.09 0.106
L
0.1 0.46 0.004 0.02
Q1
0.1 0.41 0.004 0.016
Ordering type Marking
BAT54W
D73
BAT54AW
D74
BAT54go is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
®
BAT54J / W / AW / CW / SW
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE
Delivery mode Tape & reel Tape & reel Tape & reel Tape & reel Tape & reel
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringementof patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
260
Note 1: for double diodes, Ptot is the total dissipation of both diodes
*
:
dPtot dTj
<
1 Rth(j−a)
thermal runaway condition for a diode on its own heatsink
DESCRIPTION Schottky barrier diodes encapsulated either in SOT-323 or SOD-323 small SMD packages. Single and double diodes with different pining are available.
Fig. 3: Reverse leakage current versus junction temperature.
IR(µA) 1E+2
1E+1
Tj=100°C
IR(µA) 1E+4
VR=30V
1E+3
1E+2
1E+0
Tj=50°C
1E+1
1E-1 1E-2
0
1E+0
Tj=25°C
1E-1
VR(V)
Value
VRRM Repetitive peak reverse voltage
30
IF Continuous forward current
0.3
IFSM Surge non repetitive forward current
tp=10ms sinusoidal
1
Ptot Power dissipation (note 1)
E 1.15 1.25 1.35 0.045 0.049 0.053
e
0.65
0.026
H 1.8 2.1 2.4 0.071 0.083 0.094
E
L 0.1 0.2 0.3 0.004 0.008 0.012
θ0
30° 0
30°
4/5
PACKAGE MECHANICAL DATA SOD-323
Min. Typ. Max. 240 320 400 500 900 1 100
Unit mV
µA
Symbol Parameters
C Junction capacitance
trr
Reverse recovery
time
Tests conditions Tj = 25°C VR = 1 V F = 1 MHz
Tj=25°C
8.00E-3
6.00E-3 4.00E-3
2.00E-3
VFM(V)
0.00E+0
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50
IFM(A) 5E-1
1E-1
Tj=100°C
1E-2
Tj=50°C
Tj=25°C
VFM(V) 1E-3
θ
c
D b
e
DIMENSIONS
REF. Millimeters
Inches
Min. Typ. Max. Min. Typ. Max.
A 0.8
1.1 0.031
0.043
A1 0.0
0.1 0.0
0.004
b 0.25
0.4 0.010
0.016
c 0.1
0.26 0.004
0.010
D 1.8 2.0 2.2 0.071 0.079 0.086
Rth(j-a) (°C/W) 600
550
P=0.2W
500
450
400
350 300
0
S(Cu) (mm ) 5 10 15 20 25 30 35 40 45 50
3/5
BAT54J / W / AW / CW / SW
PACKAGE MECHANICAL DATA SOT-323
A A1
L H
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
2/5
Fig. 2: Reverse leakage current versus reverse voltage applied (typical values).
BAT54J / W / AW / CW / SW
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
Min.
Typ. Max. Unit 10 pF
IF = 10 mA IR = 10 mA Tj = 25°C Irr = 1 mA RL = 100 Ω
5
ns
Fig. 1-1: Forward voltage drop versus forward current (typical values, low level).
SOD-323
230
Tamb = 25°C
SOT-323
Tstg Maximum storage temperature range
- 65 to +150
Tj Maximum operating junction temperature *
150
TL Maximum temperaturefor soldering during 10s
H b
E
D
c
Q1
L
BAT54J / W / AW / CW / SW
DIMENSIONS
A1
REF. Millimeters
Inches
Min. Max. Min. Max.
A
1.17
0.046
A1
0
0.1
0 0.004
A
b
0.25 0.44 0.01 0.017
c
0.1 0.25 0.004 0.01