FMP3217BA0-GXXX资料

Name VCC VCCQ VSS /UB /LB DNU
Function Core Power I/O Power Ground Upper Byte(I/O9~16) Lower Byte(I/O 1~8) Do Not Use
/CS1 CS2 /OE Control Logic /WE /UB /LB
• Organization : 2M x 16 • Power Supply Voltage : 2.7~3.3V • Dual CS & Page Modes
FMP3217BA0 : Dual CS FMP3217BA7 : Page mode with Dual CS
CMOS LPRAM
2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
)
Unit Min 2.7 2.25 0 0.8VCCQ -0.22) Max 3.3 2.75 0 VCC+0.21) 0.2VCCQ Min 2.7 1.65 0 0.8VCCQ -0.22) Max 3.3 1.95 0 VCC+0.21) 0.2VCCQ V V V V V
0.2VCCQ
Note : 1. Overshoot : Vcc+1.0V in case of pulse width≤20ns. 2. Undershoot : -1.0V in case of pulse width≤20ns. 3. Overshoot and undershoot are sampled, not 100% tested.
/LB X1) X1) H L
/UB X1) X1) H X1) L H L L H L L
I/O1-8 High-Z High-Z High-Z High-Z High-Z Dout High-Z Dout Din High-Z Din
I/O9-16 High-Z High-Z High-Z High-Z High-Z High-Z Dout Dout High-Z Din Din
Mode Deselect/Power-down Deselect/Power-down Deselect/Power-down Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write
RECOMMENDED DC OPERATING CONDITIONS
FMP3217BA Item Supply voltage I/O operating voltage (VCCQ ≤ VCC) Ground Input high voltage Input low voltage Symbol Min VCC VCCQ VSS VIH VIL 2.7 2.7 0 0.8VCCQ -0.22) Max 3.3 3.3 0 VCC+0.211
History
Draft date
Nov.10th, 2005 Jun.1st , 2006 Feb.2nd , 2007
Remark
Preliminary
1
Revision 0.2 Feb. 2007
元器件交易网
FMP3217BA0(7)
FEATURES • Process Technology : Full CMOS
元器件交易网
FMP3217BA0(7)
Document Title
2M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
CMOS LPRAM
Revision History Revision No.
0.0 0.1 0.2 Initial Draft Revised P/N according to the new P/N system Revised ISB1 to 120uA
PRODUCT FAMILY
Operating Voltage (V) Product Family Min. Typ. Max. FMP3217BA0(7)-H60E FMP3217BA0(7)-H70E 60ns 70ns Speed Typ. 1.5mA Power Dissipation ICC1 f = 1MHz Max. 3mA ICC2 f = fmax Typ. 15mA 12mA Max. 20mA ISB1 (CMOS Standby Current) Typ. 80uA Max. 120uA
2.7
3.0
3.3
1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at Vcc = Vcc (typ) and TA = 25C. 2. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER 3. Operating Temperature Range: S (-10’C~60’C), C(0’C~70’C), E(-25’C~85’C), I (-40’C~85’C)
• Operating Temperature Ranges:
Special (-10’C to +60’C) Commercial (0’C to +70’C) Extended (-25’C to +85’C) Industrial (-40’C to +85’C)
• Separated I/O power(VCCQ) & Core Power(VCC) • Easy memory expansion with /CS1, CS2, and /OE features • Automatic power-down when deselected
3
Revision 0.2 Feb. 2007
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FMP3217BA0(7)
CAPACITANCE1)
Item Input capacitance Input/Output capacitance
1. Capacitance is sampled, not 100% tested.
CMOS LPRAM
Symbol CIN CIO Test Condition VIN=0V VIO=0V Min Max 8 8 Unit pF pF
(f=1MHz , TA=25’C)
DC AND OPERATING CHARACTERISTICS
Item Input leakage current Output leakage current Symbol ILI ILO ICC1 Average operating current ICC2 Output low voltage Output high voltage Standby Current(TTL) Standby Current(CMOS) VOL VOH ISB ISB1 Cycle time=Min, IIO=0mA, 100% duty, /CS=VIL, CS2=VIH, VIN=VIL or VIH IOL=0.5mA IOH=-0.5mA /CS=VIH, CS2=VIH, Other inputs=VIH or VIL /CS≥VCC-0.2V, CS2≤0.2V, Other inputs=0~VCC 0.8VCCQ 0.3 120 20 0.2VCCQ mA V V mA uA VIN=VSS to VCC /CS=VIH, CS2=VIH, /OE=VIH or /WE=VIL, VIO=VSS to VCC Cycle time=1us, 100%duty, IIO=0mA, /CS≤0.2V, CS2=VIH, VIN≤0.2V or VIN≥VCC-0.2V Test Conditions Min -1 -1 Typ Max 1 1 3 Unit uA uA mA
I/O16
A19
A12
A13
WE
I/O8
A18
A8
A9
A10
A11
A20
I/O9~I/O16
Data cont
48-FBGA : Top View(Ball Down)
Data cont
Column Addresses
Name CS2 /CS1 /OE /WE A0~A20 I/O1~I/O16
Function Chip Select Input Chip Select Input Output Enable Input Writeata Inputs/Outputs
Power Standby Standby Standby Active Active Active Active Active Active Active Active
H
H L
ABSOLUTE MAXIMUM RATINGS1)
Item Voltage on any pin relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Storage temperature Symbol VIN, VOUT Vcc PD TSTG Ratings -0.2 to Vcc+0.3V -0.2 to 3.6 1.0 -65 to 150 Unit V V W ’C
• Three state output and TTL Compatible • Package Type : 48-FBGA-6.00x8.00 mm2
FMP3217BA0(7)-FxxX : Normal FMP3217BA0(7)-GxxX : Pb-Free FMP3217BA0(7)-HxxX : Pb-Free & Halogen Free
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2
Revision 0.2 Feb. 2007
元器件交易网
FMP3217BA0(7)
PRODUCT LIST
Part Name FMP3217BA0(7)-H60E FMP3217BA0(7)-H70E Function
CMOS LPRAM
48-FBGA, 60ns, VCC=3.0V, VCCQ=3.0V(2.5V,1.8V) 48-FBGA, 70ns, VCC=3.0V, VCCQ=3.0V(2.5V,1.8V)
1. F=FBGA, G=FBGA(Pb-Free), H=FBGA(Pb-Free & Halogen Free), W=WAFER 2. Operating Temperature Range: S (-10’C~60’C), C(0’C~70’C), E(-25’C~85’C), I (-40’C~85’C)
I/O3
Row Addresses Row select
Memory array
VSS
I/O12
A17
A7
I/O4
VCC
VCCQ
I/O13
DNU
A16
I/O5
VSS
I/O15
I/O14
A14
A15
I/O6
I/O7
I/O1~I/O8 Data cont I/O Circuit Column select
PIN DESCRIPTION
1 2 3 4 5 6
FUNCTIONAL BLOCK DIAGRAM
A B C D E F G H
/LB
/OE
A0
A1
A2
CS2
Clk gen.
Precharge circuit.
I/O9
/UB
A3
A4
/CS1
I/O1
VCC VSS
I/O10
I/O11
A5
A6
I/O2
FUNCTIONAL DESCRIPTION
/CS1 H X1) X1) L H H H X1) L L L H L X1) L H L
1. X means don’t care.(Must be low or high state)
CS2 H L H H
/OE X1) X1) X1) H
/WE X1) X1) X1) H