2SD2696资料

2SD2696
Transistors 1/1
Low frequency transistor (for amplification)
2SD2696
z Structure z External dimensions (Unit : mm) NPN Silicon Epitaxial Planar Transistor
z Features
1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size. 2) Collector saturation voltage is low. V CE (sat) : max. 300mA at I C = 100mA / I B = 2mA
z
Switching
z Packaging specifications
z Absolute maximum ratings (T a=25°C)
∗1∗2Parameter
V V CBO Symbol V V CEO mA I C
mA
I CP mW / TOTAL
P D °C Tj °C
Tstg
Limits Unit Collector-base voltage Collector-emitter voltage Collector current
Power dissipation Junction temperature
Range of storage temperature
∗1 Pw =10ms, Single pulse
∗2 Each terminal mounted on a recommended land.
30150−55 to +150
30V V EBO Emitter-base voltage 6400800150
z Electrical characteristics (T a=25°C)
Parameter
Symbol BV CEO I EBO Min.30Typ.Max.Unit Conditions
BV CBO BV EBO I CBO V CE (sat)h FE f T C ob
Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current
Collector-emitter saturation voltage DC current gain
Transition frequency Output capacitance
−−V I C =1mA 30−−V I C =10µA 6−−V I E =10µA −−100nA V CB = 30V −−100nA V EB = 6V
−120300mV I C =100mA, I B = 2mA 270−400680−V CE =2V, I C =100mA
− 3.0
−MHz V CE =2V, I E = −100mA, f=100MHz −
−pF
V CB =10V, I E = 0A, f=1MHz
Appendix
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1。