BYV12中文资料

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RM12中文资料

RM12中文资料

RM1200E THRU RM2000E500 Milliamp High Voltage Silicon Rectifier 1200 to 2000 VoltsFeatures• Low Cost • Low Leakage• Low Forward Voltage Drop • High Current Capability • High VoltageMaximum Ratings• Operating Temperature: -55°C to +150°C •Storage Temperature: -55°C to +150°CMCC Catalog Number Device Marking Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage RM1200E 1200V 840V 1200V RM1500E 1500V 1050V 1500V RM1800E 1800V 1260V 1800V RM2000E2000V1400V 2000VElectrical Characteristics @ 25°C Unless Otherwise SpecifiedAverage Forward CurrentI F(AV)500mA T A = 50°C Peak Forward Surge Current I FSM30A8.3ms, half sineMaximum Instantaneous Forward VoltageRM1200E-RM1800ERM2000EV F 2.0V 3.0V I FM = 0.5A;T A = 50°C Maximum DCReverse Current At Rated DC Blocking VoltageI R 5.0µA 50µA T A = 25°C T A = 100°C Typical Junction CapacitanceC J30pFMeasured at1.0MHz, V R =4.0Vomp onents 20736 Marilla Street Chatsworth! "# $ % ! "#Micro Commercial ComponentsxCase Material: Molded Plastic. UL Flammability Classification Rating 94V-0www.mccsemi .comRM12RM15RM18RM20RM1200E - RM2000E110040510158Figure 3Peak Forward Surge Current Peak Forward Surge Current - Amperes versus Number Of Cycles At 60Hz - CyclesAmpsCycles261020608040202530Instantaneous Reverse Current - Micro Amps versus Percent Of Rated Peak Reverse Voltage - VoltsFigure 1Typical Reverse Characteristics 012020406080.01.02.04.06T J = 25°CµAVolts100.08.1.2.4.6.8124Average Forward Rectified Current - Amperes versus Ambient Temperature - °CFigure 2Forward Derating Curve150255075100100200300Single Phase, Half Wave60Hz Resistive or Inductive Load mA°C125400500600TMMicro Commercial Componentswww.mccsemi .comMicro Commercial Components***IMPORTANT NOTICE***Micro Commercial Components Corp.reserve s the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes .Micro Commercial Components Corp.does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,northe rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp.and all the companies whoseproducts are represented on our website, harmless against all damages.***APPLICATIONS DISCLAIMER***Products offer by Micro Commercial Components Corp.are not intended for use in Medical,Aerospace or Military Applications.。

AV106-12中文资料

AV106-12中文资料

Parameter 1ConditionFrequency Min.Typ.Max.Unit Switching CharacteristicsRise, On (10/90% or 50% CTL to 90% RF) 1.0µS Fall, Off (90/10% RF or 50% CTL to 10% RF)0.3µS Intermodulation Intercept Point (IIP3)3For Two-tone Input Power +0 dBm0.9 GHz10dBmControl Voltage (V C )0.0V SV Supply Voltage (V S )3V Control Current (I C ) 0.2 x V C mA Supply Current (I S )150µAGaAs IC 35 dB Voltage Variable Attenuator Single Positive 3 V Control 0.5–2.5 GHzFeaturess Single Positive +3 V Control Voltage s 35 dB Attenuation Range @ 0.9 GHz s Excellent Linearity PerformanceSOIC-8AV106-120.0490.016 MAX.0.004 (0.10 mm)0.007 (0.17 mm)8˚PIN 1DescriptionThe AV106-12 GaAs IC FET voltage variable attenuator provides 35 dB attenuation range at 900 MHz controlled by a single positive voltage.The VVA has a linear transfer curve of 12 dB/V slope, with input and output VSWR better than 2:1 over all states.Its attenuation range at 1900 MHz is 25 dB.It operates with supply voltage of +3 V and control voltage of 0 V to +3 V in a low cost SOIC-8 package.The RF ports require 25 pF DC blocking capacitors.Electrical Specifications at 25°C (V = 3 V)Operating Characteristics at 25°C (V S = 3 V)1.All measurements made in a 50 Ωsystem, unless otherwise specified.2.Maximum attenuation includes insertion loss.3.For worst case state.Preliminary2.52.0Frequency (GHz)Insertion Loss vs. FrequencyI n s e r t i o n L o s s (d B )0.51.01.5-5.0-4.5-4.0-3.5-3.0-2.5-20.-1.5-1.0-0.50.02.52.03.01.5V C (V)Attenuation vs. Control VoltageA t t e n u a t i o n (dB )0.51.0-40-35-30-25-20-15-10-50 2.502.00Frequency (GHz)Maximum Attenuation vs. FrequencyM a x i m u m A t t e n u a t i o n (d B )0.501.001.50-40-35-30-25-20-15-10-50Typical Performance Data @ 0.9 GHz(Unless Otherwise Specified)V C (V)VSWR vs. Control VoltageV S W R1.01.11.21.31.41.51.61.71.81.92.02.52.03.01.50.51.02.02.53.01.5V C (V)Input IP3 vs. Control VoltageI I P 3 (d B m )0.51.051015202530 2.0 2.5 3.01.5V C (V)Attenuation vs. Control VoltageOver TemperatureI n s e r t i o n L o s s (d B )0.5 1.0-5-4-3-2-1012345J 2CharacteristicValue RF Input Power 50 mW > 500 MHzSupply Voltage +7 V Control Voltage +3.3 V Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°CΘJC25°C/WAbsolute Maximum RatingsPin OutDC blocking capacitors (C BL ) supplied externally.C BL = 25 pF for operation >500 MHz.Note:Exceeding these parameters may cause irreversible damage.。

BYV32中文资料

BYV32中文资料

BYV32,BYVF32 & BYVB32 SeriesVishay Semiconductorsformerly General SemiconductorDocument Number Reverse Voltage 50 to 200VForward Current 18AReverse Recovery Time25nsMounting Pad Layout TO-263ABITO-220AB (BYVF32 Series)TO-220AB (BYV32 Series)TO-263AB (BYVB32 Series)Features• Plastic package has Underwriters Laboratory Flammability Classification 94V-0• Dual rectifier construction, positive centertap • Glass passivated chip junctions • Low power loss• Low forward voltage, high current capability • High surge current capability• Superfast recovery times for high efficiencyMechanical DataCase:JEDEC TO-220AB, ITO-220AB & TO-263AB molded plastic bodyTerminals:Plated leads, solderable per MIL-STD-750, Method 2026High temperature soldering guaranteed:250°C, 0.16" (4.06mm) from case for 10 seconds Polarity:As marked Mounting Position:Any Mounting Torque:10 in-lbs maximum Weight:0.08 oz., 2.24 gBYV32,BYVF32 & BYVB32 SeriesVishay Semiconductorsformerly General Semiconductor Document Number 88558Maximum Ratings (TC= 25°C unless otherwise noted)ParameterSymbol BYV32-50BYV32-100BYV32-150BYV32-200Unit Maximum repetitive peak reverse voltage V RRM 50100150200V Maximum RMS voltage V RMS 3570105140V Maximum DC blocking voltageV DC 50100150200V Maximum average forward rectified current at T C = 125°C I F(AV)18A Peak forward surge current8.3ms single half sine-wave superimposed I FSM 150A on rated load (JEDEC Method) per legOperating junction and storage temperature range T J , T STG –65 to +150°C RMS Isolation voltage (BYVF type only) from terminals to 4500 (1)heatsink with t = 1.0 second, RH ≤30%V ISOL3500 (2)V1500 (3)Electrical Characteristics (TC= 25°C unless otherwise noted)ParameterSymbol BYV32-50BYV32-100BYV32-150BYV32-200Unit Maximum instantaneous forward voltage per leg at:(4)at I F = 20AV F1.15Vat I F = 5.0A,T J = 100°C 0.85Maximum DC reverse current per leg T J = 25°C 10at rated DC blocking voltageT J = 100°CI R 600µA Maximum reverse recovery time per leg atI F = 1A, V R = 30V , di/dt = 100A/µs, I rr = 10% I RM t rr 25ns Typical junction capacitance per leg at 4V , 1MHzC J45pFThermal Characteristics (TC= 25°C unless otherwise noted)ParameterSymbol BYV BYVF BYVB Unit Thermal resistance from junction to case per legR ΘJC1.65.01.6°C/WNotes:(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110”offset (2) Clip mounting (on case), where leads do overlap heatsink(3) Screw mounting with 4-40 screw, where washer diameter is ≤4.9mm (0.19”)(4) Pulse test:300µs pulse width, 1% duty cycleBYV32,BYVF32 & BYVB32 SeriesVishay Semiconductorsformerly General SemiconductorDocument Number Ratings andCharacteristic Curves (T A = 25°C unless otherwise noted)I F – I n s t a n t a n e o u s F o r w a r d C u r r e n t (A )1001010.10.01Maximum Non-Repetitive Peak Forward Surge Current Per Leg4.01618208.0A v e r a g e F o r w a r d R e c t i f i e d C u r r e n t (A )1211010010020********Reverse Voltage (V)p F – J u n c t i o n C a p a c i t a n c eForward Current Derating Curve。

AT45DB321-CC中文资料

AT45DB321-CC中文资料

SECTOR 0
BLOCK AR 1 BLOCK 2
8 Pages
SECTOR 1
SECTOR 2 = 270,336 bytes (256K + 8K)
BLOCK 62 BLOCK 63 BLOCK 64 BLOCK 65
SECTOR 2
SECTOR 15 = 270,336 bytes (256K + 8K) SECTOR 16 = 270,336 bytes (256K + 8K)
Read
By specifying the appropriate opcode, data can be read from the main memory or from either one of the two data buffers.
MAIN MEMORY PAGE READ: A main memory read allows the user to read data directly from any one of the 8192 pages in the main memory, bypassing both of the data buffers and leaving the contents of the buffers unchanged. To start a page read, the 8-bit opcode, 52H, is followed by 24 address bits and 32 don’t care bits. In the AT45DB321, the first address bit is reserved for larger density devices (see Notes on page 10), the next 13 address bits (PA12-PA0) specify the page address, and the next 10 address bits (BA9-BA0) specify the starting byte address within the

BYV32E-150 -200中文资料

BYV32E-150 -200中文资料

-
per diode
Non-repetitive peak reverse tp = 100 µs
-
current per diode
Storage temperature
-40
Operating junction temperature
-
1 It is not possible to make connection to pin 2 of the SOT404 package
PF / W 10
Vo = 0.7 V Rs = 0.0183 Ohms
8
6
BYV32 2.8
Tmb(max) / C 126
1.9
2.2
a = 1.57
130.8
4 135.6
4
140.4
2
145.2
0
150
0
2
4
6
8
10
IF(AV) / A
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per diode; sinusoidal current waveform where a = form
Product specification
BYV32E, BYV32EB series
ESD LIMITING VALUE
SYMBOL PARAMETER
VC
Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model; C = 250 pF; R = 1.5 kΩ
factor = IF(RMS) / IF(AV).

12N60中文资料

12N60中文资料

Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
10V
RD tp
L VDS
BVDSS IAS
VDD
VDD D.U.T.
ID(t) tp
VDS(t) Time
Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms
25℃ 100
55℃
10-1 2
Notes:
1.VDS=50V 2.250μs Pulse Test
4
6
8
10
Gate-Source Voltage, VGS (V)
UNISONIC TECHNOLOGIES CO., LTD

12N60-x-TF3-T
12N60L-x-TF3-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube Tube
Copyright © 2008 Unisonic Technologies Co., Ltd
Turn-On Rise Time Turn-Off Delay Time
tR tD(OFF)
VDD = 300V, ID = 12A, RG = 25Ω (Note 4, 5)
115 240 nsቤተ መጻሕፍቲ ባይዱ95 200 ns

BY329-1000中文资料

BY329-1000中文资料

Philips Semiconductors Product specificationRectifier diodes BY329 seriesfast, soft-recoveryFEATURESSYMBOL QUICK REFERENCE DATA• Low forward volt drop • Fast switching• Soft recovery characteristic• High thermal cycling performance • Low thermal resistanceGENERAL DESCRIPTIONPINNINGSOD59 (TO220AC)Glass-passivated double diffused PIN DESCRIPTION rectifier diodes featuring low forward voltage drop,fast reverse 1cathode recovery and soft recovery characteristic.The devices are 2anode intended for use in TV receivers,monitors and switched mode power tabcathodesupplies.The BY329series is supplied in the conventional leaded SOD59(TO220AC)package.LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134).SYMBOL PARAMETERCONDITIONSMIN.MAX.UNIT BY329-800-1000-1200V RSM Peak non-repetitive reverse -80010001200V voltageV RRM Peak repetitive reverse voltage -80010001200V V RWM Crest working reverse voltage -6008001000V I F(AV)Average forward current 1square wave; δ = 0.5;-8A T mb ≤ 122 ˚Csinusoidal; a = 1.57;-7A T mb ≤ 125 ˚CI F(RMS)RMS forward current-11A I FRM Repetitive peak forward current t = 25 µs; δ = 0.5;-16A T mb ≤ 122 ˚CI FSMNon-repetitive peak forward t = 10 ms -75A current.t = 8.3 ms-82Asinusoidal; T j = 150 ˚C prior to surge; with reapplied V RWM(max)I 2t I 2t for fusing t = 10 ms -28A 2s T stg Storage temperature-40150˚C T jOperating junction temperature-150˚C1tab21 Neglecting switching and reverse current losses.Philips Semiconductors Product specificationRectifier diodes BY329 seriesfast, soft-recoveryTHERMAL RESISTANCESSYMBOL PARAMETERCONDITIONSMIN.TYP.MAX.UNIT R th j-mb Thermal resistance junction to -- 2.0K/W mounting baseR th j-aThermal resistance junction to in free air.-60-K/WambientSTATIC CHARACTERISTICST j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT V F Forward voltage I F = 20 A- 1.5 1.85V I RReverse currentV R = V RWM ; T j = 125 ˚C-0.11.0mADYNAMIC CHARACTERISTICST j = 25 ˚C unless otherwise stated SYMBOL PARAMETERCONDITIONSMIN.TYP.MAX.UNIT t rr Reverse recovery time I F = 1 A; V R > 30 V; -dI F /dt = 50 A/µs -100135ns Q sReverse recovery chargeI F = 2 A; V R > 30 V; -dI F /dt = 20 A/µs -0.50.7µC dI R /dtMaximum slope of the reverse I F = 2 A; -dI F /dt = 20 A/µs-5060A/µsrecovery currentPhilips Semiconductors Product specificationRectifier diodes BY329 seriesfast, soft-recoveryPhilips Semiconductors Product specificationRectifier diodes BY329 seriesfast, soft-recoveryPhilips Semiconductors Product specificationRectifier diodes BY329 seriesfast, soft-recoveryMECHANICAL DATANotes1. Refer to mounting instructions for TO220 envelopes.2. Epoxy meets UL94 V0 at 1/8".Philips Semiconductors Product specification Rectifier diodes BY329 series fast, soft-recoveryDEFINITIONSData sheet statusObjective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application informationWhere application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1998All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.。

CADSTAR V12中文版教程

CADSTAR V12中文版教程

CADSTAR V12培训手册Z UK E N株式会社图研中国代表处二〇一一年七月目录Cadstar 软件配臵 (3)安装步骤 (3)软件组成及设计流程 (4)示例描述 (5)设计步骤 (5)1.库编辑器 (5)原理图符号库(Symbol) (5)元件封装库(Component) (8)器件库(Part) (9)2.绘制原理图 (13)基本设臵 (13)绘制过程 (15)转换数据到PCB (21)3.绘制PCB版图 (22)基本设臵 (22)放臵元件 (25)网络优化 (27)双向设计更新 (28)多电源、地结构 (30)设臵布线参数 (31)4.自动布线器 (32)设臵操作环境 (33)检查布通率指数 (35)交互式布线、优化 (36)后处理操作 (39)返回PCB (42)5.加工数据输出 (42)设臵输出层 (42)输出光绘数据 (43)输出钻孔数据 (46)附录 (48)CADSTAR配臵操作系统:WindowsXP SP1、Vista、Win 7C P U :硬盘:内存:分辨率:1280 x 1024虚拟内存:CD-ROM:安装步骤1.插入Cadstar 安装光盘,自动运行安装引导界面,或者运行光盘根目录下\setup.exe程序。

2.选择安装部件。

3.指定安装目录,如C:\CADSTAR 12.1。

4.选择单机锁定方式(需安装软件狗驱动程序)或网络浮动方式(指定作口令服务器的机器),完成安装后重新启动计算机。

5.针对单机版或者网络版软件,分别设臵软件license.dat文件(此步骤由Zuken公司工程师现场协助安装)。

6.选择相应模块运行。

软件风格介绍Cadstar是Windows风格软件,实行所看即所得。

可以将所看到的sch或pcb内容存成一个color文件。

出gerber时也是将这些color文件按gerber的格式输出。

软件文件介绍∙Colours- this is where the Batch Process option looks for Colours files (used for setting up the WYSIWYG);∙Initial Design Directory - this is the default Working directory for your designs;∙Macros - this is where the system stores Macro files;∙Manufacturing Output - this is where the Batch Process option stores output Spool files;∙Datasheet Files - this is where HTML Datasheets for parts are generated (.htm);∙Report Generator Files- this is where the Batch Process option looks for files created by the Manage Reports option (.rgf files);∙Reuse Files- this is the default location where the system looks for and stores Reuse files;∙Selections- this is where the Batch Process option looks for Selections files (Scale and Position Plot etc.);∙Simulation Libraries - this is where the Signal Integrity tool looks for the Parts and the Models libraries it uses in design analysis;∙Templates- this where the system stores the pre-defined template files, from which you select when starting new designs/symbols/components;∙User- this is where the Batch Process option looks for Device files (r, r etc.);软件模块组成及设计流程软件模块Library Editor (库编辑器)Design Editor (原理图编辑器、PCB版图编辑器) PREditor XR (无网格自动布线器)EMC Adviser (电磁兼容专家分析系统)设计流程图示例描述本手册以“模拟计数器”为例,讲述利用Cadstar软件进行设计的全过程,内容包括器件库的建立(符号、封装及综合)、层次化原理图设计、PCB版图编辑及布局、自动布线及后处理、加工数据输出等。

ICX285AL中文资料

ICX285AL中文资料

Item
VDD, VOUT, φRG – φSUB
Vφ2A, Vφ2B – φSUB
Against φSUB
Vφ1, Vφ3, Vφ4, VL – φSUB
Hφ1, Hφ2, GND – φSUB
CSUB – φSUB
VDD, VOUT, φRG, CSUB – GND
Against GND
Vφ1, Vφ2A, Vφ2B, Vφ3, Vφ4 – GND
• High horizontal and vertical resolution (both approximately 1024 TV-lines) still images without a mechanical
shutter
• Supports high frame rate readout mode (effective 256 lines output, 60 frame/s)
Sony reserves the right to change products and specifications without prior notice. This information does not convery any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

1ED020I12-F中文资料

1ED020I12-F中文资料
• • • AC-Drives UPS-Systems Welding
VCC1
VCC2,H
DESAT
IN+, IN-, /RST EiceDRIVERTM /FLT, RDY CLAMP 1ED020I12-F OUT
VEE2,H GND2,H CPU VCC2,L DESAT
IN+, IN-, /RST EiceDRIVERTM /FLT, RDY CLAMP 1ED020I12-F OUT
Edition 2008-10-07 Published by Infineon Technologies AG, Campeon 1-12, 85579 Neubiberg, Germany © Infineon Technologies AG 2008. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

BUV298AV_01中文资料

BUV298AV_01中文资料

BUV298AVNPN TRANSISTOR POWER MODULEs HIGH CURRENT POWER BIPOLAR MODULE s VERY LOW R th JUNCTION CASEsSPECIFIED ACCIDENTAL OVERLOAD AREASs INSULATED CASE (2500V RMS)s EASY TO MOUNTsLOW INTERNAL PARASITIC INDUCTANCEINDUSTRIAL APPLICATIONS: s MOTOR CONTROL s SMPS & UPSs WELDING EQUIPMENTOctober 2001ABSOLUTE MAXIMUM RATINGS®1/7BUV298AVTHERMAL DATAC unless otherwise specified)ELECTRICAL CHARACTERISTICS (T case = 25 oSafe Operating AreasDerating CurveCollector Emitter Saturation VoltageThermal ImpedanceCollector Emitter Voltage VersusBase Emitter ResistanceBase Emitter Saturation VoltageBUV298AVReverse Biased SOAReverse Biased AOASwitching Times Inductive LoadForward Biased SOAForward Biased AOASwitching Times Inductive Load VersusTemperatureBUV298AVDc Current GainTurn-on Switching Test CircuitTurn-on Switching WaveformsTurn-off Switching Test CircuitTurn-off Switching WaveformsBUV298AVBUV298AVInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.BUV298AV。

BZV12中文资料

BZV12中文资料
k handbook, halfpage
BZV10 to BZV14
DESCRIPTION Voltage reference diode in a hermetically-sealed SODe.
a
MAM216
APPLICATION • Voltage reference sources in measuring instruments such as digital voltmeters.
MBG533
MBG532
handbook, halfpage
30
rdif (Ω) 25
0 20 −0.001 15
−0.002
−0.003 1.5
2.0
IZ (mA)
2.5
10 1.5
2.0
IZ (mA)
2.5
Fig.2
Temperature coefficient change as a function of working current; typical values.
Fig.4 SOD68 (DO-34).
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.

112B中文资料

112B中文资料

Previous Page | Return to Index | Next Page1/4" ENCLOSED PHONE JACKS1. Series 11*2. PC Terminal View*3. Series N11*click here to download a schematic drawing(you will need to have Adobe Acrobat installed on your system to do this)Hi-D® Jax 2- and 3-CONDUCTORHi-D Jax® 2- and 3-conductor enclosed phone jacks are ideal for panel/chassis and PC board mounting. Unitized molded housing protects springs, provides mechanical and electrical reliability, minimizes leakage and provides low capacity between springs. Mounts on .625 inch minimum centers in rows or arrays. .25 inch or .21 in inside diameter bushing types, metal or thermoplastic bushings (for insulated mounting). Insulated Hi-D Jax® jacks are specifically designed for in-circuit (insulated) mounting from mounting surface and have fully protected enclosed internal sleeve feature. Solder lugs or PC terminals may be selected.MOUNTINGJacks mount in a single .375 inch diameter hole on .625 inch minimum centers. Series11*, N11*, NS11* and S11* mount in panels up to .156 inch thick. Series L11* andNL11* (long bushing) mount in panels up to .25 inch thick. Jacks with PC terminals mount on PC boards up to .094 inch thick. Formed "shoulders" on each terminal provide stable stand-off mount. Threaded bushing permits mechanical connection to equipment panel. Mounting hardware is supplied.SERIES 11* - 2- and 3-conductor types, threaded metalbushing .276 inch long. .25 inch inside diameterbushings.SERIES L11* - Same as Series 11*, except bushing is .375inch long for mounting in panels up to .25 inch thick.SERIES N11* - Same as Series 11*, except bushing ismolded thermoplastic for insulated mounting.SERIES NL11* - Same as Series N11*, except bushingis .375 inch long for insulated mounting in panels up to.25 inch thick.SERIES S11* - Same as Series 11*, except bushing has.21 inch inside diameter. Smaller diameter protects againstaccidental insertion of plugs with .25 inch diameter fingers.ý NS11* - (SPECIAL ORDER ONLY) - Same asSeries N11*, except bushing is .21 inch inside diameter.113BPC1M AND 114BPC1M - Versatile, 3-conductor 113BPC1M and 114BPC1M feature springs which accept a wide variety of 1/4 inch plug designs. Self-aligning PC terminals allow for easier insertion into a printed circuit board. Also feature a metric thread mounting.TWO CONDUCTOR PART NUMBERSSolder Lug Part Number PC TerminalsPart NumberDescription Jack Schematic1TypicalMating Plug2111111PC Open circuit I250 N111N111PC Insulated bushing I250NL111-.375 " long insulatedbushingI250112A112APC Single closed circuit III250 L112A L112APC.375" long bushing III250 N112A N112APC Insulated bushing III250NL112A-.375" long insulatedbushingIII250113113PC Isolated "make" circuit V250 N113-Insulated bushing V250ý 113D113DPC Transfer circuit (1-C)VI 3250 113E113EPC Isolated "break" circuit IX250 THREE CONDUCTOR PART NUMBERS112B112BPC Double open circuit IV267L112B-.375" long bushing IV267 N112B N112BPC Insulated bushing IV267 NL112B-.375" long bushing IV267-S112BPC .210" inside diameterbushingIV S-267113B113BPC Single closed circuit VII267-113BPC1M Single closed circuit VII-L113B-.375" long bushing VII267 N113B N113BPC Insulated bushing VII267 NL113B-.375" long bushing VII267 113F113FPC Ring circuit closed XXVIII267 114B114BPC Double closed circuit XII267 114BPC1M Double closed circuit XII-L114B L114BPC.375" long bushing XII267 N114B N114BPC Insulated bushing XII267 NL114B NL114BPC.375" long bushing XII2671 Other circuits available; contact factory. Schematics pages 65 and 66.2 See Plug Section for other options.3 Two tip springs.ý Special order only. Contact Switchcraft.SPECIFYING NOTE:Unless otherwise shown in "Description", jacks have .276 inch long threaded bushings with .25 inch inside diameter.Hi-D Jax® 2- and 3-CONDUCTORSPECIFICATIONSMATERIALMounting Bushing: Series 11*, L11*, S11* - Nickel-plated copper alloy. Series N11*, NL11*, NS11* - Molded thermoplastic over nickel-plated copper alloy sleeve.Previous Page | Return to Index | Next PageTo search a category please click on the corresponding icon:| Connectors | Jacks and Plugs || Patch Panels, Patch Kits & Jackfields | Cable Assemblies and Patch Cords | Switches | All products shown are covered by Switchcraft's limited lifetime warranty.| Switchcraft home |About Us | Products | What's New | Search | Contact Us。

Z515中文资料(Intel)中文数据手册「EasyDatasheet - 矽搜」

Z515中文资料(Intel)中文数据手册「EasyDatasheet - 矽搜」
Intel m ay m ak e changes to specifications and product descriptions at any tim e, without notice. Designers m ust not rely on the absence or characteristics of any features or instructions m ark ed “reserved” or “undefined.” Intel reserves these for future definition and shall have no responsibility whatsoever for conflicts or incom patibilities arising from future changes to them . The inform ation here is subject to change without notice. Do not finalize a design with this inform ation.
UNLESS O THERW ISE AGREED IN W RITING BY INTEL, THE INTEL PRO DUCTS ARE NO T DESIGNED NO R INTENDED FO R ANY APPLICATIO N IN W HICH THE FAILURE O F THE INTEL PRO DUCT CO ULD CREATE A SITUATIO N W HERE PERSO NAL INJURY O R DEATH MAY O CCUR.
Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order. Copie s of docum ents which have an orde r num be r and are re fere nce d in this docum ent, or othe r Inte l lite rature , m ay be obtaine d

LV12S26-150资料

LV12S26-150资料

TECHNICAL DATASHEETRev. CLV12S26-150Low Voltage DC-DC Converter10-36 Vdc Input 26Vdc Output at 5.8A Half-Brick PackageApplications:• For use in 12V and 24V battery applications. • For use in Intermediate and Distributed Bus Architectures (IBA)• Telecommunication equipment • Network (LANs/WANs) Equipment • Next generation low voltage, high current microprocessors and IcsFeatures:• Up to 86% Efficient • Cost Efficient Solution• Delivering 5.8A at Room Temperature with No Added Heat Sink with 400 LFM • Fixed Switching Frequency • High Reliability• Consult Factory for Optional Heat Sink • Output Short Circuit Protection • Output Over Current Protection• Optional Encapsulation for added Ruggedness • Remote ON/OFF• Remote Sense Compensation to 10% Vout • Fast Transient Response • 100% Burn InDescription:The LV12S26-150 is a high density, low input voltage, isolated converter with a wide input voltage range. Low input voltage converters are uncommon in the industry and the LV12S26-150 offers the flexibility of operation with both 12V and 24V busses. This state-of-the-art converter’s features include fast transient response, short circuit protection, over current protection, and many other features that are required for today’s demanding applications.Technical Specifications M o d e l N o.LV12S26-150All specifications are based on 25 o C, Nominal Input Voltage and Maximum Output Current unless otherwise noted.We reserve the right to change specifications based on technological advances.SPECIFICATION Related condition Min Nom Max Unit SwitchingFrequency - 350 - kHz INPUT (V in)Operating Voltage Range 10 12 / 24 36 Vdc UVLO Turn On at 9.4 9.5 9.6 Vdc UVLO Turn Off at 9.3 9.4 9.5 Vdc Maximum Input Current Low Line - 6.3 - ANo Load Input Current No Load - 0.15 - AInput Current under “Remote Off” - 0.0064 - A Reflected Ripple Current - 225 - mA EFFICIENCY - 84.5 - % OUTPUT (V o)Voltage Set Point ±RS shorted to ±Vo 25.74-1%26.026.26+1%Vdc%Voltage Adjustment Max Output limited to 150W 23.4-10%26.028.6+10%VdcLoad Regulation ±RS shorted to ±Vo - 0.1 0.2 % Line Regulation ±RS shorted to ±Vo - 0.1 0.2 % Temperature Drift - 0.2 - % / o CRemote Sense Compensation Max Output limited to 150W - 15.1510%Vdc%Ripple 1uF Ceramic &10uF Tantalum - 360 - mV pk-pk Spikes 1uF Ceramic &10uF Tantalum - - mV pk-pk Current 0.6 - 5.8 ACurrent Limit Power Limited-Dependent upon SENSEcompensation and TRIM adjustment- 10 - AOver Voltage Limit Output Clamped - - - VdcDYNAMIC RESPONSE 1uF Ceramic & 10uF TantalumLoad step / ∆ V 50% to 100% Io, di/dt=1A/uS - 200 - mVRecovery Time Recovery to within 1% Nominal Vo - - msTurn On Delay From Vin(min) to Vout (nom) - - msTurn On Overshoot Full Load Resistive - - %Hold Up Time From Vin (min) to V ULVO_Turn_Off 0--mS REMOTE ON/OFF Active HighRemote ON – Active High Min High (ON/OFF pin) 2.2 - - VdcRemote ON – Active Low Max Low (ON/OFF pin) N/A - - VdcRemote OFF – Active High Max Low (ON/OFF pin) - - 1.2 VdcRemote OFF – Active Low Min High (ON/OFF pin) N/A - - VdcRemote ON/OFF pin Floating – Active High Over Operating Voltage Range 2.5 - 5.0 VdcRemote ON/OFF pin Floating – Active Low Over Operating Voltage Range N/A - - VdcI ON/OFF Sink to pull low – Active Low or High V ON/OFF =0V, Vin=36V - - 0.38 mAI ON/OFF Source to drive high – Active High V ON/OFF =5V, Vin=36V - - 0.03 mAI ON/OFF Source to drive high – Active Low V ON/OFF =5V, Vin=36V - - - mATurn On Delay – Active High ON/OFF (max Low) to Vout (min) - 9 - msTurn Off Delay – Active High ON/OFF (0V) to Vout (min) - 160 - uSISOLATIONInput-Output 1minute -1500-VdcInput-Case 1 minute - 500 - VdcOutput-Case 1minute - 500 - VdcTHERMALAmbient Max. Ambient limited by OTP -40 25 OTP o COver Temperature Protection (OTP)Case Temperature Greater than - 95 - o CTurn On (OTP) Case Temperature Less than - 85 - o CMTBF Calculated Using Bellcore TR-332 Method 1 case 3 2,563,116 hoursMECHANICAL See Figure 1Table 1: Pin AssignmentsPin # Pin Name Function Comments1 -VoNegativeOutput2 -RS Negative Remote Sense If not used, leave open or short to -Vo3 Trim Output Voltage Trim Refer to page 64 +RS Positive Remote Sense If not used, leave open or short to +Vo5 +VoPositiveOutput6 -VinNegativeInput7 CHGND Chassis Ground (Case) If not used, leave open8 Key Pin/NC To Key Converter Leave as a No Connect pin9 ON/OFFRemoteOn/Off If not used, leave floating for Active High Unit If not used, short to –Vin on an Active Low Unit10 +Vin PositiveInputFigure 1: Mechanical DimensionsNOTES:1. PIN TO PIN TOLERANCE ± .01 [±0.3],PIN DIAMETER TOLERANCE: ±.005 [±0.13].2. CASE MATERIAL: .040 [1.02] THICK, ALUMINUM ALLOY 3003-0,PER: QQA 250/2.3. UNLESS OTHERWISE SPECIFIED.TO ORDER:4. UNIT COMES WITH EITHER 3M x 0.5 THREADED THRUINSERTS OR FOR Ø.125 THRU-HOLE ADD: “TH” SUFFIX TOMODEL PART NUMBER.EXAMPLE: LV12S15-100TH5. CONSULT FACTORY FOR OPTIONAL HEAT SINK.DESIGN CONSIDERATIONSUnder Voltage Lock Out (UVLO)The converter output is disabled until the input voltage exceeds the UVLO turn-on limit. The converter will remain ON until the input voltage falls below the UVLO turn-off limit.Over Current ProtectionThe converter is protected from short circuit and over current conditions. During these fault conditions, the converter output will ‘hiccup’. The converter output will recover once the short or over current fault is removed. Over Temperature Protection (OTP)The converter has internal thermal protection that will shut the converter OFF once the case temperature exceeds the OTP turn-off limit. The converter will resume operation when the case temperature has dropped below the OTP turn-on limit.Input FilterIt is recommended to bypass the +Vin and –Vin pins of the converter with a minimum of 680uF (50V minimum) capacitor (UCC - SXE50VB681M12X35LL). No other bypassing is needed. However, to reduce the input ripple beyond what is seen in Photo 1, larger values of capacitance may be used in conjunction with a ceramic capacitor. Additionally, an inductor may be placed between the source and the previously mentioned capacitor. No inductor should be placed between the capacitor and the input to the converter. It is important to note that placement of the input filter must be as close as possible to the input pins of the converter to assure a low impedance at the pins.Figure 2: Input Filter SetupOutput FilterNo additional output capacitor is needed for the power supply to operate. However, to reduce the ripple and noise on the output, additional capacitance may be added. A low ESR Ceramic capacitor may be added across the +Vo and –Vo pins to reduce the ripple and spike noise. Additional capacitance in the form of a tantalum or aluminum electrolytic may also be placed across these pins in order reduce ripple and improve the transient peak-to-peak voltage deviation.Remote SenseTo improve the regulation at the load, route the connections from the -RS and the +RS pins to the –Vo and +Vo connections at the load. This will force the converter to regulate the voltage at the load and not at the pins of the converter (refer to Graph 6). If it is not desired to use the Remotes Sense feature, the –RS and +RS pins may be left open or they may be shorted to the -Vo and +Vo pins respectively. Shorting the RS pins to the Vo pins will reduce the voltage drops through the converter pins.Figure 4: Trim DownOutput Voltage Trim: (24V, 26V, and 28V Models)The output is adjustable +/–10% of rated output voltage. To trim the output voltage up, place the trim resistor between the Trim and –Rs pins (Figure 5). To trim the output voltage down, place the trim resistor between the Trim and +Rs pins (Figure 4).The value of the trim resistor with respect to the desired output voltage (Vo) can be derived from the followingTable 2: Trim Equations for LV Series (24V, 26V, and 28V Models)Vonom Vref RH RL Rlim RTH to -Rs 26.000 2.49524.00 2.55 8.25 RTL to +Rs Percent Trim Low Trim HighTrim Vo RTL Vo RTH1% 25.740 2342.17 26.260 203.60 All in Kohms2% 25.480 1100.90 26.520 102.103% 25.220 711.89 26.780 66.35 4% 24.960 521.71 27.040 48.10 5% 24.700 408.96 27.300 37.02 6% 24.440 334.34 27.560 29.59 7% 24.180 281.31 27.820 24.25 8% 23.920 241.68 28.080 20.23 9% 23.660 210.95 28.340 17.09 10% 23.400 186.41 28.600 14.58 (in Kohms)(in Kohms)Note that while decreasing the output voltage, themaximum output current still remains at 5.8A, and while increasing the output voltage, the output current is reduced to maintain a total output power at 150 W.Figure 5: Trim UpR loadR loadGraph 1: LV12S26-150 Efficiency vs. Output CurrentGraph 2: LV12S26-150Max Ambient vs. IoGraph 3:LV12S26-150 Power Dissipation vs. Input VoltageGraph 4: LV12S26-150 Input Current vs. Input VoltageGraph 5: LV12S26-150 Load Regulation(±RS Pins Open)Graph 6: LV12S26-150 Load Regulation(+RS to +Vo, -RS to -Vo)Graph 7: LV12S26-150 Line Regulation(±RS Pins Open)Graph 8: LV12S26-150 Line Regulation(+RS to +Vo, -RS to -Vo)Photo 1: Remote Turn On Vin=24V, Iout = 0.6A Photo 2: Remote Turn On Vin=24V, Iout = 5.8A,Photo 3: Normal Turn On Vin=24V, Iout = 0.6A Photo 4: Normal Turn On Vin=24V, Iout = 5.8APhoto 5: Remote Turn Off Vin=24V, Iout = 0.6APhoto 6: Remote Turn Off Vin=24V, Iout = 5.8APhoto 7: Transient Response 50% to 100%Vin=24V, Iout = 2.9 to 5.8A Cout=1uF Ceramic + 10uF TantalumPhoto 8: Transient Response 10% to 100%Vin=24V, Iout = 0.6 to 5.8A Cout=1uF Ceramic + 10uF TantalumPhoto 9: Output Voltage Ripple (20 MHz BW)Vin=24V, Iout=0.6ACout=1uF Ceramic + 10uF TantalumPhoto 10: Output Voltage Ripple (20 MHz BW)Vin=24V, Iout=5.8ACout=1uF Ceramic + 10uF TantalumPhoto 11: Output Voltage Ripple (Spike)Vin=24V, Iout = 5.8ACout=1uF Ceramic + 10uF TantalumPhoto 12: Input Reflected Ripple Voltage and Ripple CurrentVin=24V, Iout = 5.8Awith a 680uF Aluminum Electrolytic and 12uH series inductor.TEST SETUP:The LV12S26-150 specifications are tested with the following configurations:Regulation and Efficiency SetupTo ensure that accurate measurement are taken, the voltage measurements are taken directly at the terminal of the module. This minimizes errors due to contact and trace lengths between the load and the output of the supply. The following is a diagram of the test setup.Figure 7: Regulation and Efficiency Probe SetupOutput Ripple Voltage SetupThe module is tested with a 1uF ceramic capacitor in parallel with a 10uF tantalum capacitor across the output terminals.Figure 8: Ripple Voltage Probe SetupInput Reflected Ripple Current and Input Ripple Current SetupThe module is tested for input reflected ripple current (Irrc) and input ripple current (Irc). The input ripple voltage is also measured at the pins with the following input filter. If there is a need to reduce input ripple current/voltage then additional ceramic capacitors can be added to the input of the converter.Figure 9: Ripple Current SetupR loadConverter Thermal ConsiderationThe converter is designed to operate without convective cooling if the derating curves are followed. The converter can operate at higher temperatures if airflow is applied. Airflow should be aligned lengthwise to the converter for optimum heat transfer. Contact Factory for derating curves.Figure 10: Airflow OrientationCompany Information:Wall Industries, Inc. has created custom and modified units for over 40 years. Our in-house research and development engineers will provide a solution that exceeds your performance requirements on-time and on budget. Our ISO9001-2000 certification is just one example of our commitment to producing a high quality, well documented product for our customers.Our past projects demonstrate our commitment to you, our customer. Wall Industries, Inc. has a reputation for working closely with its customers to ensure each solution meets or exceeds form, fit and function requirements. We will continue to provide ongoing support for your project above and beyond the design and production phases. Give us a call today to discuss your future projects.Contact Wall Industries for further information:Phone: (603)778-2300Toll Free: (888)587-9255Fax: (603)778-9797E-mail: sales@Web: Address: 5 Watson Brook Rd.Exeter, NH 03833。

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Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current Reverse recovery time Reverse recovery charge Test Conditions IF=1A VR=VRRM VR=VRRM, Tj=150°C IF=0.5A, IR=1A, iR=0.25A IF=1A, di/dt=5A/ms Type Symbol VF IR IR trr Qrr Min Typ 1 60 Max 1.5 5 150 300 200 Unit V mA mA ns nC
94 9522
tp – Pulse Length ( s )
Figure 8. Thermal Response
Dimensions in mm
∅ 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5 g Cathode Identification
Figure 6. Max. Forward Current vs. Forward Voltage
www.vishay.de • FaxBack +1-408-970-5600 2 (4)
Document Number 86039 Rev. 2, 24-Jun-98
元器件交易网
technical drawings according to DIN specifications 94 9538
∅ 0.82 max.
26 min.
4.2 max.
26 min.
Document Number 86039 Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600 3 (4)
tp=10ms, half sinewave ϕ=180°, Tamb=25°C
Maximum Thermal Resistance
Test Conditions l=10mm, TL=constant on PC board with spacing 25mm Symbol RthJA RthJA Value 45 100 Unit K/W K/W
TL=constant
94 9101
l – Lead Length ( mm )
Figure 1. Typ. Thermal Resistance vs. Lead Length
1.2 I FAV– Average Forward Current ( A )
Figure 4. Junction Temperature vs. Reverse/Repetitive Peak Reverse Voltage
R thJA – Therm. Resist. Junction / Ambient ( K/W ) 120 T j – Junction Temperature (° C ) l 100 80 60 40 20 0 0 5 10 15 20 25 30
94 9517
240 l RthJA=100K/W 200 VR RM 160 BYV12 120 BYV14 80 BYV13 40 0 1000 0 200 400 600 800 VR,VRRM – Reverse / Repetitive Peak Reverse Voltage ( V ) BYV15 BYV16 VR
v v
10
1
Tj = 175°C
0.1
Tj = 25°C
0.01 0 1 2 3 4 Tamb – Ambient Temperature ( °C ) VF – Forward Voltage ( V )
94 9518
Figure 3. Max. Average Forward Current vs. Ambient Temperature
元器件交易网
BYV12...BYV16
Vishay Telefunken
Fast Silicon Mesa Rectifiers
Features
D D D D
Glass passivated junction Hermetically sealed package Soft recovery characteristic Low reverse current
Figure 5. Reverse Current vs. Junction Temperature
100
2.0 IF – Forward Current ( A ) 1.6 1.2 0.8 0.4 0 0 40 80 120 160 z RthJA 45K/W L=10mm
Applications
Fast rectifier and switch for example for TV–line output circuits and switch mode power supply
94 9539
Absolute Maximum Ratings
Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Test Conditions Type BYV12 BYV13 BYV14 BYV15 BYV16 Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM IFRM IFAV Tj=Tstg Value 100 400 600 800 1000 40 9 1.5 –65...+175 Unit V V V V V A A A °C
Peak forward surge current Repetitive peak forward current Average forward current Junction and storage temperature range Tj = 25_C Parameter Junction ambient
1000 I R – Reverse Current ( mA )
1.0 0.8 0.6 0.4 0.2 0 0 40 80
VR RM f 20kHz RthJA 100K/W PCB
v v
Scattering Limit 100
10
1 VR = VR RM 0 40 80 120 160 200
0.1 120 160 200
BYV12...BYV16
Vishay Telefunken
12 CD – Diode Capacitance ( pF ) 10 8 6 4 2 0 0.1
94 9523
f = 470kHz Tj = 25°C 1 10 100
VR – Reverse Voltage ( V )
Figure 7. Typ. Diode Capacitance vs. Reverse Voltage
Z thp – Thermal Resistance for Pulse Cond. (K/W) 1000 VR RM= 1000 V RthJA=100K/W 100 Tamb= 25°C Tamb= 45°C 10 Tamb= 60°C
Tamb= 70°C 1 10–5 Tamb= 100°C 10–4 10–3 10–2 10–1 100 101 100 101 IFRM – Repetitive Peak Forward Current ( A )
94 9521
94 9519
Tamb – Ambient Temperature ( °C )
Tj – Junction Temperature ( °C )
Figure 2. Max. Average Forward Current vs. Ambient Temperature
I FAV– Average Forward Current ( A )
Document Number 86039 Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600 1 (4)
元器件交易网
BYV12...BYV16
Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified)
元器件交易网
BYV12...BYV16
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
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