2N2369ACSM中文资料
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HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALL Y SEALED
CERAMIC SURFACE MOUNT P ACKAGE FOR HIGH RELIABILITY APPLICA TIONS
FEATURES
• SILICON PLANAR EPITAXIAL NPN TRANSISTOR
• HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE)• CECC SCREENING OPTIONS
APPLICATIONS:
Hermetically sealed surface mount version of the popular 2N2369A for high reliability /space applications requiring small size and low weight devices.
V CBO Collector – Base Voltage V CEO Collector – Emitter Voltage V EBO Emitter – Base Voltage I C Collector Current P D Total Device Dissipation @ T A =25°C Derate above 25°C P D Total Device Dissipation
@ T C =25°C Derate above 25°C
T STG , T J
Operating and Storage Temperature Range
40V 15V 4.5V 200mA 360mW 2.06mW / °C 680mW 6.85mW / °C –65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
SOT23 CERAMIC (LCC1 PACKAGE)
ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise stated)
PAD 1 – Base
Underside View
PAD 2 – Emitter
PAD 3 – Collector
2.54 ± 0.13 1.02 ± 0.10(0.04 ± 0.004)
(0.055)max.
A =
* Pulse Test: t p£300m s, d£2%.