METHOD FOR REGULATING AND CONTROLLING MAGNETIC MUL

专利名称：METHOD FOR REGULATING AND
CONTROLLING MAGNETIC MULTI-DOMAIN
STATE
发明人：BI, Chong,毕冲,LONG, Shibing,龙世兵,LIU,
Ming,刘明
申请号：CN2014/073289
申请日：20140312
公开号：WO2015/135156A1
公开日：
20150917
专利内容由知识产权出版社提供
专利附图：
摘要：The present invention relates to the technical field of information data storage
and processing. Disclosed is a method for regulating and controlling a magnetic multi-domain state. According to the method, when the current is input to magnetic thin films, an external magnetic field with the magnetic density of 0-4*105 A/m is applied to regulate and control the magnetization state of the magnetic thin films, wherein the current is used to push the movement of a magnetic domain in the magnetic multi-domain state of the magnetic thin films, and the external magnetic field is used to regulate and control the generation of new magnetic domains in the magnetic thin films and the state of existing magnetic domains in the moving process, so that the magnetic thin films can be in a stable magnetic multi-domain state. The multi-domain state is not to be influenced by a higher or lower current, and is able to keep stable after the current is removed. The method can be used for the operation of the magnetization state of present magnetic memories and future spinning logic devices to realize the non-volatile multi-value storage and the multi-bit logical operation.
申请人：INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES,中国科学院微电子研究所
地址：No.3 Beitucheng West Road, Chaoyang District Beijing 100029 CN,中国北京市朝阳区北土城西路3号, Beijing 100029 CN
国籍：CN,CN
代理人：CHINA SCIENCE PATENT & TRADEMARK AGENT LTD.,中科专利商标代理有限责任公司
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