8050、8550 (直插和贴片) 晶体三极管
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FEATURES
Power dissipation
P CM : 0.625 W （Tamb=25℃） Collector current
I CM : 0.5 A Collector-base voltage
V (BR)CBO
: 40 V ELECTRICAL CHARACTERISTICS （Tamb=25℃ unless otherwise specified ）
Parameter
Symbol Test conditions MIN
TYP
MAX
UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100μA , I E =0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1 mA ， I B =025 V Emitter-base breakdown voltage V(BR)EBO I E = 100μA ， I C =05
V
Collector cut-off current I CBO V CB = 40 V , I E =00.1μA Collector cut-off current I CEO V CE = 20 V , I B =00.1μA Emitter cut-off current
I EBO V EB = 5 V ， I C =00.1μA
H FE （1）
V CE = 1 V, I C = 50mA
85300
DC current gain(note)
H FE （2）
V CE = 1 V, I C = 500mA 50
Collector-emitter saturation voltage V CE (sat)I C = 500mA, I B = 50 mA 0.6 V Base-emitter saturation voltage V BE (sat)I C = 500mA, I B = 50 mA 1.2 V Base-emitter voltage
V BE
I E = 100mA
1.4
V
Transition frequency
f T
V CE = 6 V, I C = 20mA
f = 30MHz
150MHz
CLASSIFICATION OF H FE(1)
Rank B C D Range
85-160
120-200
160-300
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1 2 3
TRANSISTOR (NPN)
S8050LT1 TRANSISTOR （ NPN ）FEATURES
Power dissipation
P CM : 0.3 W （Tamb=25℃） Collector current
I CM : 0.5 A Collector-base voltage
V (BR)CBO
: 40 V
ELECTRICAL CHARACTERISTICS （Tamb=25℃ unless otherwise specified ）
Parameter
Symbol Test conditions MIN TYP
MAX
UNIT Collector-base breakdown voltage V (BR)CBO Ic= 100μA ， I E =0 40 V Collector-emitter breakdown voltage V (BR)CEO Ic= 0.1mA ， I B =025 V Emitter-base breakdown voltage V (BR)EBO I E =100μA ， I C =05
V
Collector cut-off current I CBO V CB =40 V , I E =00.1μA Collector cut-off current I CEO V CB =20V , I E =00.1μA Emitter cut-off current
I EBO V EB = 5V , I C =00.1μA
H FE(1)
V CE =1V, I C = 50mA
120 350
DC current gain(note)
H FE(2)
V CE =1V, I C = 500mA 50
Collector-emitter saturation voltage V CE (sat)I C =500 mA, I B = 50mA 0.6 V Base-emitter saturation voltage V CE (sat)I C =500 mA, I B = 50mA 1.2 V
Base-emitter voltage
V BE
I E = 100mA 1.4
Transition frequency
f T
V CE =6V, I C = 20mA
f=30MHz
150MHz
CLASSIFICATION OF H FE(1)
Rank L H Range
100-200
200-350
DEVICE MARKING : S8050LT1=J3Y
SOT —23
1. BASE
2. EMITTER
3. COLLECTOR
S8050LT1PLASTIC-ENCAPSULATE TRANSISTORS