JESD22-A100D-Cycled Temperature-Humidity-Bias Life Test

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(完整)JESD22简介+目录

(完整)JESD22简介+目录

(完整)JESD22简介+目录JESD22标准定义及意义2. A100循环温湿度偏置寿命JESD22-A100CPublished:Oct—2007 CYCLEDTEMPERATUREHUMIDITYBIASLIFETEST:TheCycledTemperature-humidity—biasLifeTesti sperformedforthepurposeofevaluatingthere liabilityofnonhermeticpackagedsolidstatedevicesinhumidenvironments。

Itemploysconditionsoftemperaturecycling,humidity,andbiasthatacceleratethepenetrationofmoisturethroughtheexternalprotectivematerial(encapsulateorseal)oralongtheinterfacebetweentheexternalprotectivematerialandthemetallicconductorsthatpassthroughit.TheCycledTemperature-Humidity—BiasLifeTestistypicallyperformed oncavitypackages(e。

g。

,MQUADs,liddedceramicpingridarrays,etc.)asanalternativetoJESD22—A101orJESD22-A110.JESD22—A100C 发布:2007 年 10月循环温湿度偏置寿命试验循环温湿度偏置寿命试验以评估非气密封装固态器件在潮湿环境中的可靠性为目的。

它使用循环温度,湿度,以及偏置条件来加速水汽对外部保护性材料(封装或密封)或沿着外部保护材料和贯通其的金属导体的界面的穿透作用。

22a110-b-HAST(highly Accelerated Temperature and Humidity Stress Test)

22a110-b-HAST(highly Accelerated Temperature and Humidity Stress Test)
2 Apparatus
The test requires a pressure chamber capable of maintaining a specified temperature and relative humidity continuously, while providing electrical connections to the devices under test in a specified biasing configuration.
EIA/JEDEC standards and publications are adopted without regard to whether or not their adoption may involve patents or articles, materials, or processes. By such action JEDEC does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the EIA/JEDEC standards or publications.
TEST METHOD A110-B
HIGHLY-ACCELERATED TEMPERATURE AND HUMIDITY STRESS TEST (HAST)
(From JEDEC Council Ballot JCB-98-86, formulated under the cognizance of JC-14.1 Committee on Reliability Test Methods for Packaged Devices.)

JESD22-A110D Nov 2010 Highly Accelerated Temperature and Humidity Stress Test (HAST)

JESD22-A110D Nov 2010 Highly Accelerated Temperature and Humidity Stress Test (HAST)

PLEASE! DON’T VIOLATE THE LAW!
This document is copyrighted by JEDEC and may not be reproduced without permission. Organizations may obtain permission to reproduce a limited number of copies through entering into a license agreement. For information, contact:
NOTICE JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel. JEDEC standards and publications are designed to serve the public interest through eliminating misunderstandings between manufacturers and purchasers, facilitating interchangeability and improvement of products, and assisting the purchaser in selecting and obtaining with minimum delay the proper product for use by those other than JEDEC members, whether the standard is to be used either domestically or internationally. JEDEC standards and publications are adopted without regard to whether or not their adoption may involve patents or articles, materials, or processes. By such action JEDEC does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the JEDEC standards or publications. The information included in JEDEC standards and publications represents a sound approach to product specification and application, principally from the solid state device manufacturer viewpoint. Within the JEDEC organization there are procedures whereby a JEDEC standard or publication may be further processed and ultimately become an ANSI standard. No claims to be in conformance with this standard may be made unless all requirements stated in the standard are met. Inquiries, comments, and suggestions relative to the content of this JEDEC standard or publication should be addressed to JEDEC at the address below, or call (703) 907-7559 or Published by ©JEDEC Solid State Technology Association 2010 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 This document may be downloaded free of charge; however JEDEC retains the copyright on this material. By downloading this file the individual agrees not to charge for or resell the resulting material. PRICE: Please refer to Printed in the U.S.A. All rights reserved

封装的JEDEC标准

封装的JEDEC标准
2 x) S6 B) M* p; J" C6 kHTFB:high temperature forward bias高温正偏试验
. g8 s- X. d3 Y. @- VHTRB:high temperature reverse bias高温反偏试验
HTGB:high temperature gate bias高温栅偏试验
( o+ l! [+ g2 F: @
(TST)
JESD22A106-B
据查是晶圆级的考核
23
盐雾试验
JESD22-A107-B
24
耐焊接热试验标准
JESD22-B106-B
25
温湿度敏感器件的符号与标识
JEP113-B
26
表贴半导体器件的共面性试验
JESD22-B108
HTOL:high temperature operating life高温工作寿命试验
168hrs
5
温度循环试验
(TCT)
JESD22-A104D
500cycles
6
温度循环寿命测试
JESD22-A100C
7
上电温度循环
22A105-B
8
高温储存试验
(HTST)
JESD22-A103C
1000hrs
9
高温环境条件下的工作寿命试验
JESD22-A108C
10
恒温恒湿试验
(THT)
JESD22-A101C
JESD22-B102E
16
晶须试验
JESD22A121
17
跌落试验
IMAPS-drop-impact-dynamic-response-2008

JEDEC工业标准

JEDEC工业标准

JEDEC工业标准环境应力试验[JDa1]JESD22-A100-B Cycled Temperature-Humidity-Bias Life Test 上电温湿度循环寿命试验, (Revision of JESD22-A100-A) April 2000 [Text-jd001][JDa2]JESD22-A101-B Steady State Temperature Humidity Bias Life Test 上电温湿度稳态寿命试验, (Revision of JESD22-A101-A) April 1997 [Text-jd002][JDa3]JESD22-A102-C Accelerated Moisture Resistance -Unbiased Autoclave高加速蒸煮试验, (Revision of JESD22-A102-B) December 2000 [Text-jd003][JDa4]JESD22-A103-A Test Method A103-A High Temperature Storage Life高温储存寿命试验, (Revision of Test Method A103 Previously Published in JESD22-B) July 1989 [Text-jd004] [JDa5]JESD22-A103-B High Temperature Storage Life高温储存寿命试验, (Revision of JESD22-A103-A) August 2001 [Text-jd005][JDa6]JESD22-A104-B Temperature Cycling温度循环, (Revision of JESD22-A104-A) July 2000 (参见更新版本A104C) [Text-jd006][JDa7]EIA/JESD22-A105-B Test Method A105-B Power and Temperature Cycling上电和温度循环, (Revision of Test Method A105-A) February 1996 [Text-jd007][JDa8]JESD22-A106-A Test Method A106-A Thermal Shock热冲击, (Revision of Test Method A106-Previously Published in JESD22-B) April 1995 [Text-jd008][JDa9]JESD22-A107-A Salt Atmosphere盐雾试验, (Revision of Test Method A107-Previously Published in JESD22-B) December 1989 [Text-jd009][JDa10]JESD22-A108-B Temperature, Bias, and Operating Life高温环境条件下的工作寿命试验, (Revision of JESD22-A108-A) December 2000[JDa11]JESD22-A110-B Test Method A110-B Highly-Accelerated Temperature and Humidity Stress Test (HAST)高加速寿命试验, (Revision of Test Method A110-A) February 1999 [Text-jd010] [JDa12]JESD22-A113-B Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing非密封表贴器件在可靠性试验以前的预处理, (Revision of Test Method A113-A)March 1999 [Text-jd011][JDa13]JESD22-A118 Accelerated Moisture Resistance - Unbiased HAST不上电的高加速湿气渗透试验, December 2000 [Text-jd012][JDa14]JESD22-B106-B Test Method B106-B Resistance to Soldering Temperature for Through-Hole Mounted Devices插接器件的抗焊接温度试验, (Revision of Test Method B106-A) February1999 [Text-jd013][JDa15]EIA/JESD47 Stress-Test-Driven Qualification of Integrated Circuits集成电路施加应力的产品验收试验, July 1995 [Text-jd031][JDa1]JESD22-A104C Temperature Cycling, (Revision of JESD22-A104-B) May 2005 [Text-jd040]电应力和电测试试验[JDb1]JESD22-A114-B Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM)人体模型条件下的静电放电敏感度试验, (Revision of JESD22-A114-A) June 2000 [Text-jd014] [JDb2]EIA/JESD22-A115-A Electrostatic Discharge (ESD) Sensitivity Testing Machine Model (MM)机器模型条件下的静电放电敏感度试验, (Revision of EIA/JESD22-A115) October 1997 [Text-jd015][JDb3]JESD22-A117 Electrically Erasable Programmable ROM (EEPROM) Program/Erase Endurance and Data Retention Test EEPROM的擦涂和数据保存试验, January 2000 [Text-jd016][JDb4]EIA/JESD78 IC Latch-Up Test集成电路器件闩锁试验, March 1997 [Text-jd017][JDb5]JESD22-C101-A Field-Induced Charged-Device Model Test Method for Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components微电子器件在电荷感应模型条件下的抗静电放电试验, (Revision of JESD22-C101) June 2000 [Text-jd018]机械应力试验[JDc1]JESD-22-B103-A Test Method B103-A Vibration, Variable Frequency振动和扫频试验 (Revision of Test Method B103 Previously Published in JESD22-B) July 1989 [Text-jd019] [JDc2]JESD22-B104-A Test Method B104-A Mechanical Shock机械冲击 (Revision of Test Method B104, Previously Published in JEDEC Standard No.22-B) September 1990 [Text-jd020][JDc3]EIA/JESD22-B116 Wire Bond Shear Test Method焊线邦定的剪切试验方法, July 1998 [Text-jd021][JDc4]JESD22-B117 BGA Ball Shear BGA焊球的剪切试验, July 2000 [Text-jd022][JDc5]JESD22B113 Board Level Cyclic Bend Test Method for Interconnect Reliability Characterization of Components for Handheld Electronic Products, March 2006 [Text-jd038] [JDc6]JESD22-B111 Board Level Drop Test Method of Components for Handheld Electronic Products, July 2003 [Text-jd039]综合试验与测试[JDd1]JEDEC Standard No.22-A109 Test Method A109 Hermeticity密封性试验, July 1988 [Text-jd023][JDd2]JESD22-A120 Test Method for the Measurement of Moisture Diffusivity and Water Solubility in Organic Materials Used in Integrated Circuits集成电路器件中使用的有机材料水分扩散和水溶性测定试验方法, June 2001 [Text-jd024][JDd3]JESD22-B100-A Physical Dimensions物理尺寸的测量, (Revision of Test Method B100-Previously Published in JESD22-B) April 1990 [Text-jd025][JDd4]JESD22-B101 Test Method B101 External Visual外观检查, (Previously published in JESD22-B) September 1987 [Text-jd026][JDd5]EIA/JESD22-B102-C Solderability Test Method可焊性试验方法, September 1998 [Text-jd027] [JDd6]EIA/JESD22-B105-B Test Method B105-B Lead Integrity器件管脚的完整性试验, (Revision of Test Method B105-A) January 1999 [Text-jd028][JDd7]EIA/JESD22-B107-A Test Method B107-A Marking Permanency图标的耐久性试验, (Revision of Test Method B107-Previously Published in JESD22-B) September 1995 [Text-jd029] [JDd8]JESD22-B108 Coplanarity Test for Surface-Mount Semiconductor Devices表贴半导体器件的共面性试验, November 1991 [Text-jd030]其它[JDe1]JEP113-B Symbol and Labels for Moisture-Sensitive Devices湿度敏感器件的符号和标识, (Revision of JEP113-A) May 1999 [Text-jd032][JDe2]EIA/JEP122 Failure Mechanisms and Models for Silicon Semiconductors Devices硅半导体器件的失效机理和模型, February 1996 [Text-jd033][JDe3]IPC/JEDEC J-STD-020A Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices针对非密封表贴半导体器件的湿度/回流焊敏感度分类和级别,April 1999 [Text-jd034][JDe4]IPC/JEDEC J-STD-033 Standard for Handling, Packing, Shipping and Use of Moisture/Reflow Sensitive Surface Mount Devices湿度/回流焊敏感标贴器件的处理、包装、运输和使用的标准, May 1999 [Text-jd035][JDe5]EIA/JEP103-A Suggested Product-Documentation Classifications and Disclaimers, (Revision of JEP103) July 1996 [Text-jd036][JDe6]IPC/JEDEC J-STD-020D.1 Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices针对非密封表贴半导体器件的湿度/回流焊敏感度分类和级别,Supersedes IPC/JEDEC J-STD-020D August 2007, March 2008 [Text-jd037]。

JEDEC工业标准

JEDEC工业标准

JEDEC工业标准环境应力试验[JDa1]JESD22-A100-B Cycled Temperature-Humidity-Bias Life Test 上电温湿度循环寿命试验, (Revision of JESD22-A100-A) April 2000 [Text-jd001][JDa2]JESD22-A101-B Steady State Temperature Humidity Bias Life Test 上电温湿度稳态寿命试验, (Revision of JESD22-A101-A) April 1997 [Text-jd002][JDa3]JESD22-A102-C Accelerated Moisture Resistance -Unbiased Autoclave高加速蒸煮试验, (Revision of JESD22-A102-B) December 2000 [Text-jd003][JDa4]JESD22-A103-A Test Method A103-A High Temperature Storage Life高温储存寿命试验, (Revision of Test Method A103 Previously Published in JESD22-B) July 1989[Text-jd004][JDa5]JESD22-A103-B High Temperature Storage Life高温储存寿命试验, (Revision of JESD22-A103-A) August 2001 [Text-jd005][JDa6]JESD22-A104-B Temperature Cycling温度循环, (Revision of JESD22-A104-A) July 2000 (参见更新版本A104C) [Text-jd006][JDa7]EIA/JESD22-A105-B Test Method A105-B Power and Temperature Cycling上电和温度循环, (Revision of Test Method A105-A) February 1996 [Text-jd007][JDa8]JESD22-A106-A Test Method A106-A Thermal Shock热冲击, (Revision of Test Method A106-Previously Published in JESD22-B) April 1995 [Text-jd008][JDa9]JESD22-A107-A Salt Atmosphere盐雾试验, (Revision of Test Method A107-Previously Published in JESD22-B) December 1989 [Text-jd009][JDa10]JESD22-A108-B Temperature, Bias, and Operating Life高温环境条件下的工作寿命试验, (Revision of JESD22-A108-A) December 2000[JDa11]JESD22-A110-B Test Method A110-B Highly-Accelerated Temperature and Humidity Stress Test (HAST)高加速寿命试验, (Revision of Test MethodA110-A) February 1999 [Text-jd010][JDa12]JESD22-A113-B Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing非密封表贴器件在可靠性试验以前的预处理, (Revision of TestMethod A113-A) March 1999 [Text-jd011][JDa13]JESD22-A118 Accelerated Moisture Resistance - Unbiased HAST不上电的高加速湿气渗透试验, December 2000 [Text-jd012][JDa14]JESD22-B106-B Test Method B106-B Resistance to Soldering Temperature for Through-Hole Mounted Devices插接器件的抗焊接温度试验, (Revision of Test Method B106-A) February 1999 [Text-jd013][JDa15]EIA/JESD47 Stress-Test-Driven Qualification of Integrated Circuits集成电路施加应力的产品验收试验, July 1995 [Text-jd031][JDa1]JESD22-A104C Temperature Cycling, (Revision of JESD22-A104-B) May 2005 [Text-jd040]电应力和电测试试验[JDb1]JESD22-A114-B Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM)人体模型条件下的静电放电敏感度试验, (Revision of JESD22-A114-A)June 2000 [Text-jd014][JDb2]EIA/JESD22-A115-A Electrostatic Discharge (ESD) Sensitivity Testing Machine Model (MM)机器模型条件下的静电放电敏感度试验, (Revision of EIA/JESD22-A115)October 1997 [Text-jd015][JDb3]JESD22-A117 Electrically Erasable Programmable ROM (EEPROM) Program/Erase Endurance and Data Retention Test EEPROM的擦涂和数据保存试验, January 2000 [Text-jd016][JDb4]EIA/JESD78 IC Latch-Up Test集成电路器件闩锁试验, March 1997 [Text-jd017] [JDb5]JESD22-C101-A Field-Induced Charged-Device Model Test Method for Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components微电子器件在电荷感应模型条件下的抗静电放电试验, (Revision of JESD22-C101) June2000 [Text-jd018]机械应力试验[JDc1]JESD-22-B103-A Test Method B103-A Vibration, Variable Frequency振动和扫频试验(Revision of Test Method B103 Previously Published in JESD22-B) July1989 [Text-jd019][JDc2]JESD22-B104-A Test Method B104-A Mechanical Shock机械冲击(Revision of Test Method B104, Previously Published in JEDEC Standard No.22-B) September 1990[Text-jd020][JDc3]EIA/JESD22-B116 Wire Bond Shear Test Method焊线邦定的剪切试验方法, July 1998 [Text-jd021][JDc4]JESD22-B117 BGA Ball Shear BGA焊球的剪切试验, July 2000 [Text-jd022][JDc5]JESD22B113 Board Level Cyclic Bend Test Method for Interconnect Reliability Characterization of Components for Handheld Electronic Products, March 2006[Text-jd038][JDc6]JESD22-B111 Board Level Drop Test Method of Components for Handheld Electronic Products, July 2003 [Text-jd039]综合试验与测试[JDd1]JEDEC Standard No.22-A109 Test Method A109 Hermeticity密封性试验, July 1988 [Text-jd023][JDd2]JESD22-A120 Test Method for the Measurement of Moisture Diffusivity and Water Solubility in Organic Materials Used in Integrated Circuits集成电路器件中使用的有机材料水分扩散和水溶性测定试验方法, June 2001 [Text-jd024][JDd3]JESD22-B100-A Physical Dimensions物理尺寸的测量, (Revision of Test Method B100-Previously Published in JESD22-B) April 1990 [Text-jd025][JDd4]JESD22-B101 Test Method B101 External Visual外观检查, (Previously published in JESD22-B) September 1987 [Text-jd026][JDd5]EIA/JESD22-B102-C Solderability Test Method可焊性试验方法, September 1998 [Text-jd027][JDd6]EIA/JESD22-B105-B Test Method B105-B Lead Integrity器件管脚的完整性试验, (Revision of Test Method B105-A) January 1999 [Text-jd028][JDd7]EIA/JESD22-B107-A Test Method B107-A Marking Permanency图标的耐久性试验, (Revision of Test Method B107-Previously Published in JESD22-B) September 1995 [Text-jd029][JDd8]JESD22-B108 Coplanarity Test for Surface-Mount Semiconductor Devices表贴半导体器件的共面性试验, November 1991 [Text-jd030]其它[JDe1]JEP113-B Symbol and Labels for Moisture-Sensitive Devices湿度敏感器件的符号和标识, (Revision of JEP113-A) May 1999 [Text-jd032][JDe2]EIA/JEP122 Failure Mechanisms and Models for Silicon Semiconductors Devices硅半导体器件的失效机理和模型, February 1996 [Text-jd033][JDe3]IPC/JEDEC J-STD-020A Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices针对非密封表贴半导体器件的湿度/回流焊敏感度分类和级别, April 1999 [Text-jd034][JDe4]IPC/JEDEC J-STD-033 Standard for Handling, Packing, Shipping and Use of Moisture/Reflow Sensitive Surface Mount Devices湿度/回流焊敏感标贴器件的处理、包装、运输和使用的标准, May 1999 [Text-jd035][JDe5]EIA/JEP103-A Suggested Product-Documentation Classifications and Disclaimers, (Revision of JEP103) July 1996 [Text-jd036][JDe6]IPC/JEDEC J-STD-020D.1 Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices针对非密封表贴半导体器件的湿度/回流焊敏感度分类和级别, Supersedes IPC/JEDEC J-STD-020D August 2007, March2008 [Text-jd037]。

关于JESD的标准族统一编号

关于JESD的标准族统一编号

JEDEC工业标准环境应力试验[JDa1]JESD22-A100-B Cycled Temperature-Humidity-Bias Life Test 上电温湿度循环寿命试验, (Revision of JESD22-A100-A) April 2000 [Text-jd001][JDa2]JESD22-A101-B Steady State Temperature Humidity Bias Life Test 上电温湿度稳态寿命试验, (Revision of JESD22-A101-A) April 1997 [Text-jd002][JDa3]JESD22-A102-C Accelerated Moisture Resistance -Unbiased Autoclave高加速蒸煮试验, (Revision of JESD22-A102-B) December 2000 [Text-jd003][JDa4]JESD22-A103-A Test Method A103-A High Temperature Storage Life高温储存寿命试验, (Revision of Test Method A103 Previously Published in JESD22-B) July 1989 [Text-jd004] [JDa5]JESD22-A103-B High Temperature Storage Life高温储存寿命试验, (Revision of JESD22-A103-A) August 2001 [Text-jd005][JDa6]JESD22-A104-B Temperature Cycling温度循环, (Revision of JESD22-A104-A) July 2000 (参见更新版本A104C) [Text-jd006][JDa7]EIA/JESD22-A105-B Test Method A105-B Power and Temperature Cycling上电和温度循环, (Revision of Test Method A105-A) February 1996 [Text-jd007][JDa8]JESD22-A106-A Test Method A106-A Thermal Shock热冲击, (Revision of Test Method A106-Previously Published in JESD22-B) April 1995 [Text-jd008][JDa9]JESD22-A107-A Salt Atmosphere盐雾试验, (Revision of Test Method A107-Previously Published in JESD22-B) December 1989 [Text-jd009][JDa10]JESD22-A108-B Temperature, Bias, and Operating Life高温环境条件下的工作寿命试验, (Revision of JESD22-A108-A) December 2000[JDa11]JESD22-A110-B Test Method A110-B Highly-Accelerated Temperature and Humidity Stress Test (HAST)高加速寿命试验, (Revision of Test Method A110-A) February 1999[Text-jd010][JDa12]JESD22-A113-B Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing非密封表贴器件在可靠性试验以前的预处理, (Revision of Test Method A113-A)March 1999 [Text-jd011][JDa13]JESD22-A118 Accelerated Moisture Resistance - Unbiased HAST不上电的高加速湿气渗透试验, December 2000 [Text-jd012][JDa14]JESD22-B106-B Test Method B106-B Resistance to Soldering Temperature for Through-Hole Mounted Devices插接器件的抗焊接温度试验, (Revision of Test MethodB106-A) February 1999 [Text-jd013][JDa15]EIA/JESD47 Stress-Test-Driven Qualification of Integrated Circuits集成电路施加应力的产品验收试验, July 1995 [Text-jd031][JDa16]JESD22-A104C Temperature Cycling, (Revision of JESD22-A104-B) May 2005 [Text-jd040]电应力和电测试试验[JDb1]JESD22-A114-B Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM)人体模型条件下的静电放电敏感度试验, (Revision of JESD22-A114-A) June 2000 [Text-jd014][JDb2]EIA/JESD22-A115-A Electrostatic Discharge (ESD) Sensitivity Testing Machine Model (MM)机器模型条件下的静电放电敏感度试验, (Revision of EIA/JESD22-A115) October1997 [Text-jd015][JDb3]JESD22-A117 Electrically Erasable Programmable ROM (EEPROM) Program/Erase Endurance and Data Retention Test EEPROM的擦涂和数据保存试验, January 2000[Text-jd016][JDb4]EIA/JESD78 IC Latch-Up Test集成电路器件闩锁试验, March 1997 [Text-jd017][JDb5]JESD22-C101-A Field-Induced Charged-Device Model Test Method forElectrostatic-Discharge-Withstand Thresholds of Microelectronic Components微电子器件在电荷感应模型条件下的抗静电放电试验, (Revision of JESD22-C101) June2000 [Text-jd018]机械应力试验[JDc1]JESD-22-B103-A Test Method B103-A Vibration, Variable Frequency振动和扫频试验(Revision of Test Method B103 Previously Published in JESD22-B) July 1989 [Text-jd019] [JDc2]JESD22-B104-A Test Method B104-A Mechanical Shock机械冲击(Revision of Test Method B104, Previously Published in JEDEC Standard No.22-B) September 1990[Text-jd020][JDc3]EIA/JESD22-B116 Wire Bond Shear Test Method焊线邦定的剪切试验方法, July 1998 [Text-jd021][JDc4]JESD22-B117 BGA Ball Shear BGA焊球的剪切试验, July 2000 [Text-jd022][JDc5]JESD22B113 Board Level Cyclic Bend Test Method for Interconnect Reliability Characterization of Components for Handheld Electronic Products, March 2006 [Text-jd038] [JDc6]JESD22-B111 Board Level Drop Test Method of Components for Handheld Electronic Products, July 2003 [Text-jd039]综合试验与测试[JDd1]JEDEC Standard No.22-A109 Test Method A109 Hermeticity密封性试验, July 1988 [Text-jd023][JDd2]JESD22-A120 Test Method for the Measurement of Moisture Diffusivity and Water Solubility in Organic Materials Used in Integrated Circuits集成电路器件中使用的有机材料水分扩散和水溶性测定试验方法, June 2001 [Text-jd024][JDd3]JESD22-B100-A Physical Dimensions物理尺寸的测量, (Revision of Test Method B100-Previously Published in JESD22-B) April 1990 [Text-jd025][JDd4]JESD22-B101 Test Method B101 External Visual外观检查, (Previously published in JESD22-B) September 1987 [Text-jd026][JDd5]EIA/JESD22-B102-C Solderability Test Method可焊性试验方法, September 1998 [Text-jd027][JDd6]EIA/JESD22-B105-B Test Method B105-B Lead Integrity器件管脚的完整性试验, (Revision of Test Method B105-A) January 1999 [Text-jd028][JDd7]EIA/JESD22-B107-A Test Method B107-A Marking Permanency图标的耐久性试验, (Revision of Test Method B107-Previously Published in JESD22-B) September 1995[Text-jd029][JDd8]JESD22-B108 Coplanarity Test for Surface-Mount Semiconductor Devices表贴半导体器件的共面性试验, November 1991 [Text-jd030]其它[JDe1]JEP113-B Symbol and Labels for Moisture-Sensitive Devices湿度敏感器件的符号和标识, (Revision of JEP113-A) May 1999 [Text-jd032][JDe2]EIA/JEP122 Failure Mechanisms and Models for Silicon Semiconductors Devices硅半导体器件的失效机理和模型, February 1996 [Text-jd033][JDe3]IPC/JEDEC J-STD-020A Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices针对非密封表贴半导体器件的湿度/回流焊敏感度分类和级别, April 1999 [Text-jd034][JDe4]IPC/JEDEC J-STD-033 Standard for Handling, Packing, Shipping and Use of Moisture/Reflow Sensitive Surface Mount Devices湿度/回流焊敏感标贴器件的处理、包装、运输和使用的标准, May 1999 [Text-jd035][JDe5]EIA/JEP103-A Suggested Product-Documentation Classifications and Disclaimers, (Revision of JEP103) July 1996 [Text-jd036][JDe6]IPC/JEDEC J-STD-020D.1 Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices针对非密封表贴半导体器件的湿度/回流焊敏感度分类和级别, Supersedes IPC/JEDEC J-STD-020D August 2007, March 2008 [Text-jd037]。

JEDEC标准族

JEDEC标准族

JEDEC工业标准环境应力试验[JDa1]JESD22-A100-B Cycled Temperature-Humidity-Bias Life Test 上电温湿度循环寿命试验, (Revision of JESD22-A100-A) April 2000 [Text-jd001][JDa2]JESD22-A101-B Steady State Temperature Humidity Bias Life Test 上电温湿度稳态寿命试验, (Revision of JESD22-A101-A) April 1997 [Text-jd002][JDa3]JESD22-A102-C Accelerated Moisture Resistance -Unbiased Autoclave高加速蒸煮试验, (Revision of JESD22-A102-B) December 2000 [Text-jd003][JDa4]JESD22-A103-A Test Method A103-A High Temperature Storage Life高温储存寿命试验, (Revision of Test Method A103 Previously Published in JESD22-B) July 1989 [Text-jd004] [JDa5]JESD22-A103-B High Temperature Storage Life高温储存寿命试验, (Revision of JESD22-A103-A) August 2001 [Text-jd005][JDa6]JESD22-A104-B Temperature Cycling温度循环, (Revision of JESD22-A104-A) July 2000 (参见更新版本A104C) [Text-jd006][JDa7]EIA/JESD22-A105-B Test Method A105-B Power and Temperature Cycling上电和温度循环, (Revision of Test Method A105-A) February 1996 [Text-jd007][JDa8]JESD22-A106-A Test Method A106-A Thermal Shock热冲击, (Revision of Test Method A106-Previously Published in JESD22-B) April 1995 [Text-jd008][JDa9]JESD22-A107-A Salt Atmosphere盐雾试验, (Revision of Test Method A107-Previously Published in JESD22-B) December 1989 [Text-jd009][JDa10]JESD22-A108-B Temperature, Bias, and Operating Life高温环境条件下的工作寿命试验, (Revision of JESD22-A108-A) December 2000[JDa11]JESD22-A110-B Test Method A110-B Highly-Accelerated Temperature and Humidity Stress Test (HAST)高加速寿命试验, (Revision of Test Method A110-A) February 1999[Text-jd010][JDa12]JESD22-A113-B Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing非密封表贴器件在可靠性试验以前的预处理, (Revision of Test Method A113-A)March 1999 [Text-jd011][JDa13]JESD22-A118 Accelerated Moisture Resistance - Unbiased HAST不上电的高加速湿气渗透试验, December 2000 [Text-jd012][JDa14]JESD22-B106-B Test Method B106-B Resistance to Soldering Temperature for Through-Hole Mounted Devices插接器件的抗焊接温度试验, (Revision of Test MethodB106-A) February 1999 [Text-jd013][JDa15]EIA/JESD47 Stress-Test-Driven Qualification of Integrated Circuits集成电路施加应力的产品验收试验, July 1995 [Text-jd031][JDa16]JESD22-A104C Temperature Cycling, (Revision of JESD22-A104-B) May 2005 [Text-jd040]电应力和电测试试验[JDb1]JESD22-A114-B Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM)人体模型条件下的静电放电敏感度试验, (Revision of JESD22-A114-A) June 2000 [Text-jd014][JDb2]EIA/JESD22-A115-A Electrostatic Discharge (ESD) Sensitivity Testing Machine Model (MM)机器模型条件下的静电放电敏感度试验, (Revision of EIA/JESD22-A115) October1997 [Text-jd015][JDb3]JESD22-A117 Electrically Erasable Programmable ROM (EEPROM) Program/Erase Endurance and Data Retention Test EEPROM的擦涂和数据保存试验, January 2000[Text-jd016][JDb4]EIA/JESD78 IC Latch-Up Test集成电路器件闩锁试验, March 1997 [Text-jd017][JDb5]JESD22-C101-A Field-Induced Charged-Device Model Test Method forElectrostatic-Discharge-Withstand Thresholds of Microelectronic Components微电子器件在电荷感应模型条件下的抗静电放电试验, (Revision of JESD22-C101) June2000 [Text-jd018]机械应力试验[JDc1]JESD-22-B103-A Test Method B103-A Vibration, Variable Frequency振动和扫频试验(Revision of Test Method B103 Previously Published in JESD22-B) July 1989 [Text-jd019] [JDc2]JESD22-B104-A Test Method B104-A Mechanical Shock机械冲击(Revision of Test Method B104, Previously Published in JEDEC Standard No.22-B) September 1990[Text-jd020][JDc3]EIA/JESD22-B116 Wire Bond Shear Test Method焊线邦定的剪切试验方法, July 1998 [Text-jd021][JDc4]JESD22-B117 BGA Ball Shear BGA焊球的剪切试验, July 2000 [Text-jd022][JDc5]JESD22B113 Board Level Cyclic Bend Test Method for Interconnect Reliability Characterization of Components for Handheld Electronic Products, March 2006 [Text-jd038] [JDc6]JESD22-B111 Board Level Drop Test Method of Components for Handheld Electronic Products, July 2003 [Text-jd039]综合试验与测试[JDd1]JEDEC Standard No.22-A109 Test Method A109 Hermeticity密封性试验, July 1988 [Text-jd023][JDd2]JESD22-A120 Test Method for the Measurement of Moisture Diffusivity and Water Solubility in Organic Materials Used in Integrated Circuits集成电路器件中使用的有机材料水分扩散和水溶性测定试验方法, June 2001 [Text-jd024][JDd3]JESD22-B100-A Physical Dimensions物理尺寸的测量, (Revision of Test Method B100-Previously Published in JESD22-B) April 1990 [Text-jd025][JDd4]JESD22-B101 Test Method B101 External Visual外观检查, (Previously published in JESD22-B) September 1987 [Text-jd026][JDd5]EIA/JESD22-B102-C Solderability Test Method可焊性试验方法, September 1998 [Text-jd027][JDd6]EIA/JESD22-B105-B Test Method B105-B Lead Integrity器件管脚的完整性试验, (Revision of Test Method B105-A) January 1999 [Text-jd028][JDd7]EIA/JESD22-B107-A Test Method B107-A Marking Permanency图标的耐久性试验, (Revision of Test Method B107-Previously Published in JESD22-B) September 1995[Text-jd029][JDd8]JESD22-B108 Coplanarity Test for Surface-Mount Semiconductor Devices表贴半导体器件的共面性试验, November 1991 [Text-jd030]其它[JDe1]JEP113-B Symbol and Labels for Moisture-Sensitive Devices湿度敏感器件的符号和标识, (Revision of JEP113-A) May 1999 [Text-jd032][JDe2]EIA/JEP122 Failure Mechanisms and Models for Silicon Semiconductors Devices硅半导体器件的失效机理和模型, February 1996 [Text-jd033][JDe3]IPC/JEDEC J-STD-020A Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices针对非密封表贴半导体器件的湿度/回流焊敏感度分类和级别, April 1999 [Text-jd034][JDe4]IPC/JEDEC J-STD-033 Standard for Handling, Packing, Shipping and Use of Moisture/Reflow Sensitive Surface Mount Devices湿度/回流焊敏感标贴器件的处理、包装、运输和使用的标准, May 1999 [Text-jd035][JDe5]EIA/JEP103-A Suggested Product-Documentation Classifications and Disclaimers, (Revision of JEP103) July 1996 [Text-jd036][JDe6]IPC/JEDEC J-STD-020D.1 Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices针对非密封表贴半导体器件的湿度/回流焊敏感度分类和级别, Supersedes IPC/JEDEC J-STD-020D August 2007, March 2008 [Text-jd037]。

JESD22简介+目录列表

JESD22简介+目录列表

JESD22标准定义及意义详细如下JESD22-A101orJESD22-A110.3. A101稳态温湿度偏置寿命JESD22-A101-BPublished:Apr-1997STEADY-STATETEMPERATUREHUMIDITYBIASLIFETEST: Thisstandardestablishesadefinedmethodandconditionsf orperformingatemperaturehumiditylifetestwithbiasapplied.Thetestisusedtoevaluatethereliabilityofnonhermeticpackagedsolidstatedevicesinhumidenvironments.Itemployshightem peratureandhumidityconditionstoacceleratethepenetrati onofmoisturethroughexternalprotectivematerialoralongi nterfacesbetweentheexternalprotectivecoatingandcondu ctorsorotherfeatureswhichpassthroughit.Thisrevisionen hancestheabilitytoperformthistestonadevicewhichcanno tbebiasedtoachieveverylowpowerdissipation.JESD22-A101-B发布:1997 年8 月稳态温湿度偏置寿命试验本标准建立了一个定义的方法,用于进行一个施加偏置电压的温湿度寿命试验。

本试验用于评估非气密封装固态器件在潮湿环境下的可靠性。

试验采用高温和高湿条件以加速水汽对外部保护材料或沿着外部保护材料和外部保护涂层,贯通其的导体或其他部件的穿透作用。

JESD22-A106中文版

JESD22-A106中文版

JESD22-A106 中文版概述JESD22-A106 是一项关于环境试验的标准,由 JEDEC Solid State Technology Association 制定。

本标准规定了芯片、电子元器件和其他电子产品在不同环境条件下的试验方法和要求。

试验范围JESD22-A106 标准适用于所有类型的电子产品,包括半导体芯片、集成电路、存储器、传感器和其他各种电子元器件。

试验主要涵盖以下环境条件:1.高温试验2.低温试验3.恒温试验4.温度循环试验5.高湿度试验6.恒湿度试验7.湿热循环试验8.气候循环试验9.盐雾试验试验方法高温试验高温试验可用于评估组件在临界温度下的性能和可靠性。

试验条件如下:•温度范围:常温至 150°C•温度梯度:≤5°C/min•持续时间:至少 1000 小时低温试验低温试验用于评估组件在低温环境中的性能和可靠性。

试验条件如下:•温度范围:-65°C 至常温•温度梯度:≤5°C/min•持续时间:至少 1000 小时恒温试验恒温试验可以测试组件在恒定温度下的性能和可靠性。

试验条件如下:•温度范围:常温至 150°C•温度稳定性:±0.5°C•持续时间:至少 1000 小时温度循环试验温度循环试验可以模拟组件在温度变化环境下的应力和可靠性。

试验条件如下:•温度范围:-65°C 至 150°C•温度梯度:≤10°C/min•循环次数:至少 1000 次高湿度试验高湿度试验可用于评估组件在高湿环境下的性能和可靠性。

试验条件如下:•相对湿度范围:70% 至 95%•温度范围:常温至 85°C•持续时间:至少 1000 小时恒湿度试验恒湿度试验可以测试组件在恒定湿度下的性能和可靠性。

试验条件如下:•相对湿度范围:70% 至 95%•温度范围:常温至 85°C•温度稳定性:±0.5°C•持续时间:至少 1000 小时湿热循环试验湿热循环试验是一种将高温高湿度和低温低湿度交替循环的试验。

JESD22-A118

JESD22-A118
Arlington, Virginia 22201-3834 or call (703) 907-7559
JEDEC Standand No. 22-A118 Page 1
ACCELERATED MOISTURE RESISTANCE - UNBIASED HAST
(From JEDEC Board Ballot JCB-00-56, formulated under the cognizance of the JC-14.1 Subcommittee on Reliability Test Methods for Packaged Devices.)
3 Apparatus
The test requires a pressure chamber capable of maintaining a specified temperature and relative humidity during ramp-up to, and ramp-down from, the specified test conditions.
1 Purpose
The Unbiased HAST is performed for the purpose of evaluating the reliability of non-hermetic packaged solid-state devices in humid environments. It is a highly accelerated test which employs temperature and humidity under non-condensing conditions to accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors which pass through it. Bias is not applied in this test to ensure the failure mechanisms potentially overshadowed by bias can be uncovered (e.g. galvanic corrosion). This test is is used to identify failure mechanisms internal to the package and is destructive.

JESD22 A102E高压蒸煮

JESD22 A102E高压蒸煮

JESD22 A102E高压蒸煮
周期
每个试验周期应包括以下步骤:
a.将受试器件放置在试验腔体中,并保持稳定状态。

b.在规定的温度和相对湿度下,施加规定的蒸汽压力。

c.在试验周期结束时,将受试器件从试验腔体中移除,并
在室温下存储至少4小时。

d.重复以上步骤,直到达到规定的试验时间。

5.评估
在试验结束后,应对受试器件进行评估。

评估应包括以下内容:
a.外观检查,包括任何物理损伤和变色。

b.功能测试,包括任何电性能参数的变化。

c.显微镜检查,包括任何锈蚀、氧化或其他表面变化。

d.离子污染测试,以验证试验设备和储存箱的离子污染是
否受控。

6.结果
试验结果应记录并报告。

应包括以下内容:
a.试验条件,包括温度、相对湿度、蒸汽压力和持续时间。

b.受试器件的数量和型号。

c.试验结果,包括任何失效和变化。

d.评估结果,包括任何外观、功能和显微镜检查结果。

e.离子污染测试结果。

7.参考文献
JESD22-A102-XXX-XXX.。

JESD22-A104D temperatuer cycling

JESD22-A104D temperatuer cycling
2.4 maximum sample temperature: (Ts(max)): The maximum temperature experienced by the sample(s) as measured by thermocouples, per 3.3.
2.5 minimum sample temperature: (Ts(min)): The minimum temperature experienced by the sample(s) as measured by thermocouples, per 3.3.
This test is conducted to determine the ability of components and solder interconnects to withstand mechanical stresses induced by alternating high- and low-temperature extremes. Permanent changes in electrical and/or physical characteristics can result from these mechanical stresses.
Organizations may obtain permission to reproduce a limited number of copies through entering into a license agreement. For information, contact:
JEDEC Solid State Technology Association 3103 North 10th Street Suite 240 South

JESD22标准

JESD22标准

C:\Users\ ATC6100\ Desktop\ JEDEC标准\ JESD22-A100D.pdfC:\Users\ATC6100\ Desktop\JESD22-A101D.pdfC:\Users\ATC6100\Desktop\JEDEC标准\JESD22-A102E.pdf C:\Users\ ATC6100\ Desktop\JESD22-1D标准解读.docxC:\Users\ATC6100\Desktop\JESD22-A103E.pdfC:\Users\ATC6100\Desktop\JESD22-A104E.pdfC:\Users\ATC6100\Desktop\JESD22\JEDEC标准\JESD22-A105C_0.pdfC:\Users\ATC6100\Desktop\JESD22\JEDEC标准\JESD22-A106B-01.pdfC:\Users\ATC6100\Desktop\JEDEC标准\JESD22-A107C.pdfC:\Users\ATC6100\Desktop\JEDEC标准\JESD22-A108D.pdfC:\Users\ATC6100\Desktop\JESD22\JEDEC标准\JESD22-A109B.pdf C:\Users\ATC6100\Desktop\JESD22\JEDEC标准\JESD22-A110E.pdf C:\Users\ATC6100\Desktop\JEDEC标准\JESD22-A111B.pdf C:\Users\ATC6100\Desktop\JESD22\JEDEC标准\J-STD-020E.pdf C:\Users\ATC6100\Desktop\JESD22\JEDEC标准\JESD22-A113H.pdf C:\Users\ATC6100\Desktop\C:\Users\ATC6100\Desktop\JEDEC标准\JESD22-A117D.pdf C:\Users\ATC6100\Desktop\JEDEC标准\JESD22-A118B.pdf C:\Users\ATC6100\Desktop\JEDEC标准\JESD22-A119A.pdf C:\Users\ATC6100\Desktop\JESD22-A120B.pdfC:\Users\ATC6100\Desktop\JEDEC标准\JESD22-A121A_R.pdf C:\Users\ATC6100\Desktop\JESD22\JEDEC标准\JESD22-A122A.pdf C:\Users\ATC6100\Desktop\JESD22\JEDEC标准\JESD22-B100B.pdf C:\Users\ATC6100\Desktop\JESD22\JEDEC标准\JESD22-B101C.pdf C:\Users\ATC6100\Desktop\JESD22\JEDEC标准\JESD22-A120B.pdf C:\Users\ATC6100\Desktop\JESD22\JEDEC标准\JESD22-B103B-01.pdf C:\Users\ATC6100\Desktop\JESD22-B110B.pdf C:\Users\ATC6100\Desktop\JESD22-B105E.pdf C:\Users\ATC6100\Desktop\JESD22\JEDEC标准\JESD22-B106E.pdf C:\Users\ATC6100\Desktop\JESD22\JEDEC标准\JESD22-B107D_R.pdf C:\Users\ATC6100\Desktop\JEDEC标准\JESD22-B108B.pdfC:\Users\ ATC6100\ Desktop\ JEDEC标准\JESD22-B109B.pdf C:\Users\ ATC6100\ Desktop\JESD22-B110B.pdfC:\Users\ ATC6100\ Desktop\ JEDEC标准\ JESD22-B111A.pdf C:\Users\ ATC6100\ Desktop\ JEDEC标准\JESD22-B112B.pdfC:\Users\ATC6100\Desktop\ JEDEC标准\JESD22-B113A.pdfC:\Users\ATC6100\Desktop\JEDEC标准\JESD22-B114A.pdfC:\Users\ATC6100\Desktop\C:\Users\ATC6100\Desktop\JESD22-B117B.pdfC:\Users\ ATC6100\ Desktop\C:\Users\ ATC6100\ Desktop\C:\Users\ ATC6100\ Desktop\。

JEDEC工业标准

JEDEC工业标准

JEDEC工业标准环境应力试验[JDa1]JESD22-A100-B Cycled Temperature-Humidity-Bias Life Test 上电温湿度循环寿命试验, (Revision of JESD22-A100-A) April 2000 [Text-jd001][JDa2]JESD22-A101-B Steady State Temperature Humidity Bias Life Test 上电温湿度稳态寿命试验, (Revision of JESD22-A101-A) April 1997 [Text-jd002][JDa3]JESD22-A102-C Accelerated Moisture Resistance -Unbiased Autoclave高加速蒸煮试验, (Revision of JESD22-A102-B) December 2000 [Text-jd003][JDa4]JESD22-A103-A Test Method A103-A High Temperature Storage Life高温储存寿命试验, (Revision of Test Method A103 Previously Published in JESD22-B) July 1989 [Text-jd004] [JDa5]JESD22-A103-B High Temperature Storage Life高温储存寿命试验, (Revision of JESD22-A103-A) August 2001 [Text-jd005][JDa6]JESD22-A104-B Temperature Cycling温度循环, (Revision of JESD22-A104-A) July 2000 (参见更新版本A104C) [Text-jd006][JDa7]EIA/JESD22-A105-B Test Method A105-B Power and Temperature Cycling上电和温度循环, (Revision of Test Method A105-A) February 1996 [Text-jd007][JDa8]JESD22-A106-A Test Method A106-A Thermal Shock热冲击, (Revision of Test Method A106-Previously Published in JESD22-B) April 1995 [Text-jd008][JDa9]JESD22-A107-A Salt Atmosphere盐雾试验, (Revision of Test Method A107-Previously Published in JESD22-B) December 1989 [Text-jd009][JDa10]JESD22-A108-B Temperature, Bias, and Operating Life高温环境条件下的工作寿命试验, (Revision of JESD22-A108-A) December 2000[JDa11]JESD22-A110-B Test Method A110-B Highly-Accelerated Temperature and Humidity Stress Test (HAST)高加速寿命试验, (Revision of Test Method A110-A) February 1999 [Text-jd010] [JDa12]JESD22-A113-B Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing非密封表贴器件在可靠性试验以前的预处理, (Revision of Test Method A113-A)March 1999 [Text-jd011][JDa13]JESD22-A118 Accelerated Moisture Resistance - Unbiased HAST不上电的高加速湿气渗透试验, December 2000 [Text-jd012][JDa14]JESD22-B106-B Test Method B106-B Resistance to Soldering Temperature for Through-Hole Mounted Devices插接器件的抗焊接温度试验, (Revision of Test Method B106-A) February1999 [Text-jd013][JDa15]EIA/JESD47 Stress-Test-Driven Qualification of Integrated Circuits集成电路施加应力的产品验收试验, July 1995 [Text-jd031][JDa1]JESD22-A104C Temperature Cycling, (Revision of JESD22-A104-B) May 2005 [Text-jd040]电应力和电测试试验[JDb1]JESD22-A114-B Electrostatic Discharge (ESD) Sensitivity Testing Human Body Model (HBM)人体模型条件下的静电放电敏感度试验, (Revision of JESD22-A114-A) June 2000 [Text-jd014] [JDb2]EIA/JESD22-A115-A Electrostatic Discharge (ESD) Sensitivity Testing Machine Model (MM)机器模型条件下的静电放电敏感度试验, (Revision of EIA/JESD22-A115) October 1997 [Text-jd015][JDb3]JESD22-A117 Electrically Erasable Programmable ROM (EEPROM) Program/Erase Endurance and Data Retention Test EEPROM的擦涂和数据保存试验, January 2000 [Text-jd016][JDb4]EIA/JESD78 IC Latch-Up Test集成电路器件闩锁试验, March 1997 [Text-jd017][JDb5]JESD22-C101-A Field-Induced Charged-Device Model Test Method for Electrostatic-Discharge-Withstand Thresholds of Microelectronic Components微电子器件在电荷感应模型条件下的抗静电放电试验, (Revision of JESD22-C101) June 2000 [Text-jd018]机械应力试验[JDc1]JESD-22-B103-A Test Method B103-A Vibration, Variable Frequency振动和扫频试验 (Revision of Test Method B103 Previously Published in JESD22-B) July 1989 [Text-jd019] [JDc2]JESD22-B104-A Test Method B104-A Mechanical Shock机械冲击 (Revision of Test Method B104, Previously Published in JEDEC Standard No.22-B) September 1990 [Text-jd020][JDc3]EIA/JESD22-B116 Wire Bond Shear Test Method焊线邦定的剪切试验方法, July 1998 [Text-jd021][JDc4]JESD22-B117 BGA Ball Shear BGA焊球的剪切试验, July 2000 [Text-jd022][JDc5]JESD22B113 Board Level Cyclic Bend Test Method for Interconnect Reliability Characterization of Components for Handheld Electronic Products, March 2006 [Text-jd038] [JDc6]JESD22-B111 Board Level Drop Test Method of Components for Handheld Electronic Products, July 2003 [Text-jd039]综合试验与测试[JDd1]JEDEC Standard No.22-A109 Test Method A109 Hermeticity密封性试验, July 1988 [Text-jd023][JDd2]JESD22-A120 Test Method for the Measurement of Moisture Diffusivity and Water Solubility in Organic Materials Used in Integrated Circuits集成电路器件中使用的有机材料水分扩散和水溶性测定试验方法, June 2001 [Text-jd024][JDd3]JESD22-B100-A Physical Dimensions物理尺寸的测量, (Revision of Test Method B100-Previously Published in JESD22-B) April 1990 [Text-jd025][JDd4]JESD22-B101 Test Method B101 External Visual外观检查, (Previously published in JESD22-B) September 1987 [Text-jd026][JDd5]EIA/JESD22-B102-C Solderability Test Method可焊性试验方法, September 1998 [Text-jd027] [JDd6]EIA/JESD22-B105-B Test Method B105-B Lead Integrity器件管脚的完整性试验, (Revision of Test Method B105-A) January 1999 [Text-jd028][JDd7]EIA/JESD22-B107-A Test Method B107-A Marking Permanency图标的耐久性试验, (Revision of Test Method B107-Previously Published in JESD22-B) September 1995 [Text-jd029] [JDd8]JESD22-B108 Coplanarity Test for Surface-Mount Semiconductor Devices表贴半导体器件的共面性试验, November 1991 [Text-jd030]其它[JDe1]JEP113-B Symbol and Labels for Moisture-Sensitive Devices湿度敏感器件的符号和标识, (Revision of JEP113-A) May 1999 [Text-jd032][JDe2]EIA/JEP122 Failure Mechanisms and Models for Silicon Semiconductors Devices硅半导体器件的失效机理和模型, February 1996 [Text-jd033][JDe3]IPC/JEDEC J-STD-020A Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices针对非密封表贴半导体器件的湿度/回流焊敏感度分类和级别,April 1999 [Text-jd034][JDe4]IPC/JEDEC J-STD-033 Standard for Handling, Packing, Shipping and Use of Moisture/Reflow Sensitive Surface Mount Devices湿度/回流焊敏感标贴器件的处理、包装、运输和使用的标准, May 1999 [Text-jd035][JDe5]EIA/JEP103-A Suggested Product-Documentation Classifications and Disclaimers, (Revision of JEP103) July 1996 [Text-jd036][JDe6]IPC/JEDEC J-STD-020D.1 Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices针对非密封表贴半导体器件的湿度/回流焊敏感度分类和级别,Supersedes IPC/JEDEC J-STD-020D August 2007, March 2008 [Text-jd037]。

JESD22-A101D

JESD22-A101D

---------------------------------------------------------------最新资料推荐------------------------------------------------------JESD22-A101DJEDEC STANDARDSteady-State Temperature-Humidity Bias Life TestJESD22-A101D(Revision of JESD22-A101C, March 2009)JULY 2015JEDEC SOLID STATE TECHNOLOGY ASSOCIATION1/ 17NOTICE JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel. JEDEC standards and publications are designed to serve the public interest through eliminating misunderstandings between manufacturers and purchasers, facilitating interchangeability and improvement of products, and assisting the purchaser in selecting and obtaining with minimum delay the proper product for use by those other than JEDEC members, whether the standard is to be used either domestically or internationally. JEDEC standards and publications are adopted without regard to whether or not their adoption may involve patents or articles, materials, or processes. By such action JEDEC does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the JEDEC standards or publications. The information included in JEDEC standards and publications represents a sound approach to product specification and application, principally from the solid state device manufacturer viewpoint. Within the JEDEC organization there are procedures whereby a JEDEC standard or publication may be further processed and ultimately become an ANSI standard. No---------------------------------------------------------------最新资料推荐------------------------------------------------------ claims to be in conformance with this standard may be made unless all requirements stated in the standard are met. Inquiries, comments, and suggestions relative to the content of this JEDEC standard or publication should be addressed to JEDEC at the address below, or refer to under Standards and Documents for alternative contact information. Published by ?JEDEC Solid State Technology Association 2015 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 This document may be downloaded free of charge; however JEDEC retains the copyright on this material. By downloading this file the individual agrees not to charge for or resell the resulting material.PRICE: Contact JEDECPrinted in the U.S.A. All rights reserved3/ 17PLEASE! DON’T VIOLATE THE LAW! This document is copyrighted by JEDEC and may not be reproduced without permission. For information, contact: JEDEC Solid State Technology Association 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 or refer to under Standards-Documents/Copyright Information.---------------------------------------------------------------最新资料推荐------------------------------------------------------5/ 17JEDEC Standard No. 22-A101D Page 1TEST METHOD A101D STEADY-STATE TEMPERATURE-HUMIDITY BIAS LIFE TEST(From JEDEC Board Ballots JCB-96-64, JCB-09-10, and JCB-15-28, formulated under the cognizance of JC-14.1 Committee on Reliability Test Methods for Packaged Devices.)1ScopeThe Steady-State Temperature-Humidity Bias Life Test is performed to evaluate the reliability of nonhermetic packaged IC devices in humid environments. Temperature, humidity, and bias conditions are applied to accelerate the penetration of moisture through the external protective material (encapsulant or seal) or along the interface between the external protective material and the metallic conductors which pass through it.2ApparatusThe test requires a temperature-humidity test chamber capable of maintaining a specified temperature and relative humidity continuously, while providing electrical connections to the devices under test in a specified biasing configuration. 2.1 Temperature and relative humidityThe chamber must be capable of providing controlled conditions of temperature and relative humidity during ramp-up to, and ramp-down from, the specified test conditions.NOTE Care should be taken to ensure the test chamber (dry-bulb) temperature exceeds the wet-bulb temperature at all times.2.2Devices under stressDevices under---------------------------------------------------------------最新资料推荐------------------------------------------------------ stress must be physically located to minimize temperature gradients.NOTE Care should be taken to minimize relative humidity gradients and maximize air flow between devices.2.3Minimize release of contaminationCare must be exercised in the choice of board and socket materials to minimize release of contamination, and to minimize degradation due to corrosion and other mechanisms. 2.4 Ionic contaminationIonic contamination from the test apparatus (e.g., card cage, test boards, sockets, wiring, storage containers, etc.) shall be controlled to avoid test artifacts. 2.5 Deionized waterDeionized water with a minimum resistivity of 1 MΩ-cm at room temperature shall be used.Test Method A101D (Revision of Test Method A101C)7/ 17JEDEC Standard No. 22-A101D Page 23Test ConditionsTest conditions consist of a temperature, relative humidity, and duration used in conjunction with an electrical bias configuration specific to the device. 3.1 Temperature, Relative Humidity and Duration Temperature1 [dry-bulb °C] 85 ± 2NOTE 1 NOTE 2Relative Humidity1 [%] 85 ± 5Temperature2 [wet-bulb, °C] 81.0Vapor Pressure2 [kPa (psia)] 49.1 (7.12)Duration3 [hours] Typ. 1000 +168/-24Tolerances apply to the entire useable test area. For information only.NOTE 3 The test conditions are to be applied continuously except during any interim readouts. For interim readouts, devices should be returned to stress within the time specified in 4.5.3.2Biasing guidelinesApply either of the two methods ofbias according to the following guidelines: a) Minimize power dissipation. b) Alternate pin bias as much as possible. c) Distribute potential differences across chip metallization as much as possible. d) Maximize voltage within operating range.NOTE The priority of the above guidelines depends on mechanism and specific device characteristics.e) Either of two methods of bias can be used to satisfy these guidelines, whichever is more severe: 1) Continuous bias: The dc bias shall be applied continuously. Continuous bias is more severe than cycled bias when the die---------------------------------------------------------------最新资料推荐------------------------------------------------------ temperature is ≤ 10 °C higher than the chamber ambient temperature. If the die temperature is not known, when the heat dissipation of the device under test (DUT) is less than 200 mW. If the heat dissipation of the DUT exceeds 200 mW, then the die temperature should be calculated. If the die temperature exceeds the chamber ambient temperature by more than 5 °C then the die temperature rise above the chamber ambient should be included in reports of test results since acceleration of failure mechanisms will be affected.Test Method A101D (Revision of Test Method A101C)9/ 17JEDEC Standard No. 22-A101D Page 3 3.2 Biasing guidelines (cont’d) 2) Cycled bias: The dc voltage applied to the devices under test shall be periodically interrupted with an appropriate frequency and duty cycle. If the biasing configuration results in a temperature rise above the chamber ambient, ΔTja, exceeding 10°C, then cycled bias, when optimized for a specific device type, will be more severe than continuous bias. Heating as a result of power dissipation tends to drive moisture away from the die and thereby hinders moisture-related failure mechanisms. Cycled bias permits moisture collection on the die during the off periods when device power dissipation does not occur. Cycling the DUT bias with one hour on and one hour off is optimal for most plastic-encapsulated microcircuits. The die temperature, as calculated on the basis of the known thermal impedance and dissipation, should be quoted with the results whenever it exceeds the chamber ambient by 5 °C or more. 3.2.1 Choosing and reportingCriteria for choosing continuous or cyclical bias, and whether or not to report the amount by which the die temperature exceeds the chamber ambient temperature, are summarized in the table: ΔTja ΔTja < 5 °C, or Power per DUT < 200 mW (ΔTja ≥ 5 °C or Power per DUT ≥ 200 mW),---------------------------------------------------------------最新资料推荐------------------------------------------------------ and ΔTja < 10 °C ΔTja ≥ 10 °C Cyclical Bias? N o No Report ΔTja? No YesYes1YesCycling the DUT bias with one hour on and one hour off is optimal for most plasticencapsulated microcircuits14ProceduresThe test devices shall be mounted in a manner that exposes them to a specified condition of temperature and humidity with a specified electrical biasing condition. Exposure of devices to excessively hot, dry ambient or conditions that result in condensation on devices and electrical fixtures shall be avoided, particularly during ramp-up and ramp-down. Appropriate attention should also be made to avoid any water dripping on the devices under stress.4.1 Ramp-upThe time to reach stable temperature and relative humidity conditions should be less than 3 hours. Condensation on the devices under stress and/or fixtures/hardware shall be avoided at all times by ensuring that their temperature is always higher than the dew point temperature.Test Method A101D (Revision of Test Method A101C)11/ 17JEDEC Standard No. 22-A101D Page 4 4.2 Ramp-downRamp-down should be less than 3 hours. Condensation shall be avoided by ensuring that the test chamber (dry-bulb) temperature exceeds the wetbulb temperature at all times during ramp-down.NOTE For a DUT with a cavitiy in the package, condensation on the internal surface may occur due to length of ramp-down time.4.3Test ClockThe test clock starts when the temperature and relative humidity reach the setpoints, and stops at the beginning of ramp-down. 4.4 BiasBias application during ramp-up and ramp-down is optional. Bias should be verified after devices are loaded, prior to the start of the test clock. Bias should also be verified after the test clock stops, but before devices are removed from the chamber. 4.5 ReadoutElectrical test shall be performed not later than 48 hours after the end of ramp-down. For intermediate readouts, devices shall be returned to stress within 96 hours of the end of ramp-down. The rate of moisture loss from devices after removal from the chamber can be reduced by placing the devices in sealed moisture barrier bags (without desiccant). When devices are placed in sealed bags, the "test window clock" runs at 1/3 of the rate of devices exposed to the laboratory ambient. Thus the test window can be extended to as---------------------------------------------------------------最新资料推荐------------------------------------------------------ much as 144 hours, and the time to return to stress to as much as 288 hours by enclosing the devices in moisture-proof bags.NOTE 1 current). NOTE 2 The electrical test parameters should be chosen to preserve any defect (i.e., by limiting the applied test Additional time-to-test delay or return-to-stress delay time may be allowed if justified by technical data4.6HandlingSuitable hand-covering shall be used to handle devices, boards and fixtures. Contamination control is important in any accelerated moisture stress test.Test Method A101D (Revision of Test Method A101C)13/ 17JEDEC Standard No. 22-A101D Page 55Failure CriteriaA device will be considered to have failed the Steady-State Temperature-Humidity Bias Life Test if parametric limits are exceeded, or if functionality cannot be demonstrated under nominal and worst-case conditions. Specific failure criteria may be found in other applicable document or data sheet.6SafetyFollow equipment manufacturer's recommendations and local safety regulations.7SummaryThe following details shall be specified in the applicable procurement document: a) Test duration, if other than as specified in 3.1. b) Measurements after test. c) Biasing configuration. d) Temperature of die during test if it is ≥ 5 °C above the chamber ambient. e) Frequency and duty cycle of bias if cycled bias is to be used.Test Method A101D (Revision of Test Method A101C)---------------------------------------------------------------最新资料推荐------------------------------------------------------ JEDEC Standard No. 22-A101D Page 6Annex A (informative) Differences between JESD22-A101D and its predesessors These tables briefly describe most of the non-editorial changes made to entries that appear in this standard, JESD22-A101D, compared to its predecessors, JESD22-A101C (March 2009) and JESD22-A101-B (April 1997). A.1 Clause 3.1 3.1 3.1 4.1 4.2 A.2 Clause 1 1 1 1 1 2.1 2.2 2.4 3.1 3.1 3.2 3.2e 3.2.1 3.2.1 4 4.1 4.2 4.2 4.5 5 Differences between JESD22-A101D and JESD22-A101C Description of change Changed “psia/kPa” to “kPa (psia)”. This corrects an error made in JESD22-A101C when the order of the numbers was reversed, but the order of the units in the heading was not. In ta ble, last column: replaced “Note 4” with context of NOTE 4. Removed NOTE 4. Changed the phrase “shall be less than 3 hours” to “should be less than 3 hours”. Changed the phrase “shall not exceed 3 hours” to “should be less than 3 hours”. Differences betwee n JESD22-A101C and JESD22-A101-B (April 1997) Description of change deleted “for the purpose of evaluating” replaced with “to evaluate”. deleted “solid-state” replaced with “IC”. deleted “It employs conditions of” replaced with “.”. deleted “which” replace d with “conditions are applied to”. deleted15/ 17“encapsulant” replaced with “encapsulate”. Added note. Added note. deleted “of” replaced with “from” Under duation hours, changed from “1000(-24,+168)” to “Note 4” Added Note 4. Added “either of the two methods of”. deleted ‘kinds” rep laced with “methods”. In table replaced “D” with “Δ” in 3 places. Added reference 1. Add last sentence to paragraph beginning “Appropriate attention…”. Reworded second paragraph. Added “during ramp-down” at end of first paragraph. Added note. Added note. Reworded paragraph.Test Method A101D (Revision of Test Method A101C)---------------------------------------------------------------最新资料推荐------------------------------------------------------ Standard Improvement FormJEDEC JESD22-A101DThe purpose of this form is to provide the Technical Committees of JEDEC with input from the industry regarding usage of the subject standard. Individuals or companies are invited to submit comments to JEDEC. All comments will be collected and dispersed to the appropriate committee(s). If you can provide input, please complete this form and return to: JEDEC Attn: Publications Department 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 1. I recommend changes to the following: Requirement, clause number Test method number Clause number Fax: 703.907.7583The referenced clause number has proven to be: Unclear Too Rigid In Error Other 2. Recommendations for correction:3.Other suggestions for document improvement:Submitted by Name: Company: Address: City/State/Zip: Date: Phone : E-mail:17/ 17。

JESD22-A103D高温存储试验

JESD22-A103D高温存储试验

JESD22-A103D高温存储试验1. 范围该测试适用于评价、筛选、监测或鉴定试验所有固态器件。

高温存储测试经常用来判定在存储条件下时间和温度的影响,针对固体电子器件的热激活失效机理和失效时间分布。

测试器件,使用加速温度应力,不使用电气条件。

该测试也许具有破坏性,根据时间、温度和封装。

2. 参考文档JESD22-B101, External VisualJESD47,Stress-Test-Driven Qualification of Integrated CircuitsJ-STD-020,Joint IPC/JEDEC Standard ,Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface-Mount Devices.3. 设备3.1 高温存储箱在测试期间,能将所有测试样品保持在特定温度的可控温度箱。

3.2 电子测试设备能对器件进行适当测量的电子设备。

4. 流程4.1 高温存储条件被测器件应该在表1的其中一个温度条件下连续存储。

注意当选择一个加速条件时应谨慎行事,因为使用的加速温度可能超过器件和材料的承受能力,从而出现正常使用条件下不会发生的失效。

作为最低限度,应考虑下列项目:1)金属熔点,特别是焊锡。

金属老化包括冶金接口。

2)封装老化。

例如:任何高分子材料的玻璃转化温度Tg和空气中的热稳定性。

3)封装的含水量。

4)硅器件的温度限制。

5)测试条件(温度、时间)应选择覆盖相应失效机理的加速和器件的预期寿命。

鉴定试验和可靠性检测测试条件一般要求时间为表1中条件B 1000小时。

其他条件和时间适当使用。

器件要恢复室温状态或其他定义温度时进行临时测试。

4.2 测量除非另行规定,临时和最终测试测量应该在器件从特定测试条件移除后168小时内完成。

除非另行规定,临时测量为可选。

如果提供了特定技术的验证数据,可以不需要满足时间窗口。

JESD22-A100D-Cycled Temperature-Humidity-Bias Life Test

JESD22-A100D-Cycled Temperature-Humidity-Bias Life Test

NOTICE JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel. JEDEC standards and publications are designed to serve the public interest through eliminating misunderstandings between manufacturers and purchasers, facilitating interchangeability and improvement of products, and assisting the purchaser in selecting and obtaining with minimum delay the proper product for use by those other than JEDEC members, whether the standard is to be used either domestically or internationally. JEDEC standards and publications are adopted without regard to whether or not their adoption may involve patents or articles, materials, or processes. By such action JEDEC does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the JEDEC standards or publications. The information included in JEDEC standards and publications represents a sound approach to product specification and application, principally from the solid state device manufacturer viewpoint. Within the JEDEC organization there are procedures whereby a JEDEC standard or publication may be further processed and ultimately become an ANSI standard. No claims to be in conformance with this standard may be made unless all requirements stated in the standard are met. Inquiries, comments, and suggestions relative to the content of this JEDEC standard or publication should be addressed to JEDEC at the address below, or refer to under Standards and Documents for alternative contact information. Published by ©JEDEC Solid State Technology Association 2013 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 This document may be downloaded free of charge; however JEDEC retains the copyright on this material. By downloading this file the individual agrees not to charge for or resell the resulting material. PRICE: Contact JEDEC Printed in the U.S.A. All rights reserved

JESD22 A102E高压蒸煮

JESD22 A102E高压蒸煮

JESD22-A102-E 高压蒸煮试验1.范围本方法用于评估非气密性封装IC器件在湿度环境下的可靠性。

温度/湿度/偏压条件应用于加速湿气的渗透,可通过外部保护材料(塑封料或封口),或沿着外部保护材料与金属传导材料之间界面进行渗透。

2.设备本试验要求一个压力箱,能够维持规定的温度和相对湿度。

2.1记录建议每个试验循环有一套温度曲线记录,以便验证应力条件。

2.2被试器件被试器件不近于内部箱表面3cm,不能直接受热。

2.3离子污染试验设备和储存箱的离子污染必须受控,避免影响被测器件。

2.4去离子水必须使用室温下最小1MΩ-cm的去离子水。

3.试验条件试验条件包括温度,相对湿度,蒸汽压力和持续时间表1 温度,相对湿度和压力注1 公差应用于整个可用的试验区域.注 2 试验条件应持续施加,除去中间读数点。

对中间读数点,器件件应在5.2规定时间内返回加压。

注3 本文件之前的版本规定以下试验条件。

试验时间由内部鉴定要求、JESD47或适用的程序文件规定。

典型为96小时。

注意:对塑封微电路,湿气会降低塑封料的有效的玻璃化温度。

在有效的玻璃化温度之上的应力温度可能导致与操作使用相关的失效机理。

4.程序受试器件应以一定方式固定,暴露在规定的温度、湿度条件下。

应避免元件置于100℃以上和小于10%R.H.湿度的环境中,特别是上升、下降和先期测量干燥期间。

上升和下降时间应分别小于3小时。

在设备控制和冷却程序时要特别小心防止受试器件受到破坏性的降压。

确保减少污染,经常清洁试验腔体。

4.1试验周期温度和相对湿度达到第4条规定的设定点启动试验计时,并在下降开始点停止计时。

4.2测试电测试应在下降结束降到室温不早于2小时,不超过48小时内进行。

对于中间测量,在下降阶段结束后96小时内器件恢复应力。

器件从试验箱移出后,可以通过把器件放入密封的潮湿袋(无干燥剂)中来减小器件的潮气释放速率。

当器件放入密封袋时,测试时间计时以器件暴露于实验室环境中潮气释放速率的1/3来计算。

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A recording device (e.g. a chart recorder or a computer) with an interface to suitable chamber monitoring instrumentation shall be provided for continuous recording of chamber temperature and relative humidity. 2.3 Devices under stress
2
Apparatus
The test requires a temperature-humidity test chamber capable of maintaining a specified temperature and relative humidity profile continuously, while providing electrical connections to the devices under test in a specified biasing configuration. 2.1 Temperature and relative humidity
1
Scope
The Cycled Temperature-Humidity-Bias Life Test is typically performed on cavity packages (e.g., MQUADs, lidded ceramic pin grid arrays, etc.) as an alternative to JESD22-A101 or JESD22-A110. The Cycled Temperature-humidity –Biased Life Test is performed for the purpose of evaluating the reliability of non-hermetic, packaged solid state devices in humidity environments when surface condensation is likely. It employs conditions of bias, temperature cycling and high humidity that will cause condensation to occur on the device surface. It is useful to determine device surface susceptibility to corrosion and/or dendritic growth. For most applications test method JESD22-A110 “Highly Accelerated Temperature and Humidity Stress Test (HAST)” or JESD22-A101 “Steady State Temperature, Humidity, Biased Life Test” is preferred.
JEDEC STANDARD
Cycled Temperature-Humidity-Bias Life Test
JESD22-A100D
(Revision of JESD22-A100-C,October 2007)
JULY 2013
JEDEC SOLID STATE TECHNOLOGY ASSOCIATION
Test Method A100D (Revision of A100C)
JEDEC Standard No. 22-A100C Page 2 2 2.5 Apparatus (cont’d) Ionic contamination
Ionic contamination of the test apparatus (card cage, test boards, sockets, wiring, storage containers, etc.) shall be controlled to avoid test artifacts. 2.6 Deionized water
JEDEC Standard No. 22-A100D Page 1
TEST METHOD A100D CYCLED TEMPERATURE-HUMIDITY-BIAS LIFE TEST
(From JEDEC Board Ballot JCB-13-26, formulated under the cognizance of JC-14.1 Committee on Reliability Test Methods for Packaged Devices.)
Deionized water with a minimum resistivity of 1 M•cm at room temperature shall be used.
3Leabharlann Test Conditions
The test condition consists of a temperature, relative humidity, and duration used in conjunction with an electrical bias configuration specific to the device. 3.1 Temperature and relative humidity
Devices under stress must be physically located to minimize temperature gradients. 2.4 Minimize release of contamination
Care must be exercised in the choice of board and socket materials, to minimize release of contamination, and to minimize degradation due to corrosion and other mechanisms.
NOTICE JEDEC standards and publications contain material that has been prepared, reviewed, and approved through the JEDEC Board of Directors level and subsequently reviewed and approved by the JEDEC legal counsel. JEDEC standards and publications are designed to serve the public interest through eliminating misunderstandings between manufacturers and purchasers, facilitating interchangeability and improvement of products, and assisting the purchaser in selecting and obtaining with minimum delay the proper product for use by those other than JEDEC members, whether the standard is to be used either domestically or internationally. JEDEC standards and publications are adopted without regard to whether or not their adoption may involve patents or articles, materials, or processes. By such action JEDEC does not assume any liability to any patent owner, nor does it assume any obligation whatever to parties adopting the JEDEC standards or publications. The information included in JEDEC standards and publications represents a sound approach to product specification and application, principally from the solid state device manufacturer viewpoint. Within the JEDEC organization there are procedures whereby a JEDEC standard or publication may be further processed and ultimately become an ANSI standard. No claims to be in conformance with this standard may be made unless all requirements stated in the standard are met. Inquiries, comments, and suggestions relative to the content of this JEDEC standard or publication should be addressed to JEDEC at the address below, or refer to under Standards and Documents for alternative contact information. Published by ©JEDEC Solid State Technology Association 2013 3103 North 10th Street Suite 240 South Arlington, VA 22201-2107 This document may be downloaded free of charge; however JEDEC retains the copyright on this material. By downloading this file the individual agrees not to charge for or resell the resulting material. PRICE: Contact JEDEC Printed in the U.S.A. All rights reserved
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