LED基础知识培训-外延、芯片_图文(精)

LED基础知识培训-外延、芯片王立 2009-3-16 Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation

内容提要 1 2 3 4 LED器件基础知识 LED器件基础知识 LED材料生长 LED材料生长 LED芯片制造芯片制造高效率LED芯片设计芯片设计高效率 Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation

LED器件基础知识 1、半导体发光的概念发光是物体内部以某种方式吸收的能量转化为光辐射的过程。发光是一种非平衡辐射。区分各种非平衡辐射的宏观光学参量是辐射期间—去掉激发后辐射还可延续的时间。发光的辐射期间在10-11秒以上。 Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation

LED器件基础知识半导体发光的不同形态粉末发光。薄膜发光。结型发光。通常所说的半导体发光是指结型发光——器件的核心在于p-n结。半导体照明技术是结型电致发光和粉末光致发光的结合。 Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation

LED器件基础知识 2、半导体发光的研究历史 1907 ! Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation

LED器件基础知识 1923, O.W. Lossev of Russia reported electroluminescent light emission in silicon carbide crystals. 1937, F. Destriau of France reported (field-excited electroluminescence of zinc sulfide powders. 1939 – 1944 World War II 1951 – Solid State Lighting potential resurfaced when a team of researchers led by Kurt Lehovec started to investigate the electroluminescent potential of silicon carbide. 1962 – Nick Holonyak Jr, working at General Electric, gave the first practical demonstration of LEDs. 1968 – HP Labs develops the first commercially available light-emitting diode. GE, Bell Labs make the same claim. LEDs were first invented in England, Korea and China as well, depending upon who you talk to. …… 1994 –高亮度蓝光LED实现产业化，半

导体照明成为可能。 Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation

LED器件基础知识 3、半导体发光的原理——p-n结正向偏压下，电子和空穴复合 Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation

LED器件基础知识能带理论与半导体发光由于晶体中原子的周期性排列而使价电子不再为单个原子所有—电子的共有化。电子的共有化使原先每个原子中具有相同能级的电子能级，因各原子间的相互影响而分裂成一系列和原来能级很接近的新能级，形成能带。。E B 1s ∆E A O r r0 原子中的能级晶体中的能带∆E 氢原子的能级分裂 Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation

LED器件基础知识两个相邻能带间可能有一个能量间隔-禁带禁带宽度的大小是区分导体、半导体和绝缘体的重要特征空带空带• • • • • • • • • • • • • • • • • • 空带满带• • • • • • • • • • • • • • • • • • ∆Eg 禁带满带∆E g • • • • • • • • • • • • • • • • • • 禁带满带导体能带 Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation 半导体能带绝缘体能带

LED器件基础知识 Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation

LED器件基础知识 LED的I-V特性和发光光谱 Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation

LED器件基础知识发光波长取决于禁带宽度：λ= 1240/Eg (nm 可见光的波长范围：380nm -800 nm，对应的禁带宽度约3.3~1.6eV 通过形成混晶可以实现发光波长的连续变化。 Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation Lattice Power (Jiangxi Corporation