半导体材料英文缩略语

[材料科学] 半导体材料英文缩略语
材料科学2008-03-24 16:18:46 阅读37 评论0 字号：大中小订阅
援引：MEMC Electronic Materials, Inc.
A
. -- Angstrom
A-defects -- Dislocation loops in Silicon formed by agglomeration of interstitials
AA -- Atomic absorption
AE -- Acid Etch
AFM -- Atomic Force Microscopy
ALCVD -- Atomic Layer Chemical Vapor Deposition
AMC -- Barrel or batch type Epi reactor (Applied Materials)
APCVD -- Atmospheric-Pressure Chemical Vapor Deposition Furnace ASIC -- Application Specific Integrated Circuit
ASM -- a single-chamber Epi reactor (ASM America)
ASTM -- American Standard Test Method
ASTM -- American Society for Testing and Materials
B
BESOI -- Bonded and Etch Back SOI
BGSOI -- Bonded and Grind Back SOI
BJT -- Bipolar Junction Transistor
BMD -- Bulk Micro-Defects or Bulk Microdefect Density (used almost exclusively
as a measure of the oxygen precipitate density)
BOE -- Buffered Oxide Etch
BOX -- Buried Oxide Layer
BP -- Backside Polish
BV -- Breakdown Voltage
Bvox -- Breakdown Voltage-oxide
C
°C -- Centigrade
°C/min -- Centigrade per minute
CD -- Critical Dimension
CE -- Caustic Etch
cm -- Centimeter (0.01 meter)
CMOS -- Complementary Metal Oxide Semiconductor
CMP -- Chemical Mechanical Polishing
CO -- Carbon Monoxide
CO2 -- Carbon Dioxide
COO -- Cost of Ownership
COP’s -- Crystal Originated Particles
CoQC -- Certificate Of Quality Conformance
CP -- Crystal Puller
CV -- Capacity or capacitance voltage
CVD -- Chemical Vapor Deposition
CZ -- Czochralski method of pulling single crystal
D
D-defects -- Very small voids in Silicon formed by agglomeration of vacancies
DIBL -- Drain Induced Barrier Lowering
DIC -- Differential Interference Contrast
DL -- Diffusion Length
DMOS -- Double-diffused MOS
DOE -- Design of Experiments
DOF -- Depth of Focus
DRAM -- Dynamic Random Access Memory
DSOD – Direct Surface Oxide Defect
DSP -- Double Sided Polish
DZ -- Denuded Zone (depth measured from the surface that is free of oxygen
precipitates and which is denuded of interstitial oxygen (by
out-diffusion))
E
eDRAM -- Embedded Dynamic Random Access Memory
EG -- Enhanced Gettering
EEPROM -- Electrically-erasable and Programmable Read-only Memory
EPROM -- Erasable and Programmable Read-only Memory
EOT -- Equivalent Oxide Thickness
EPI -- Epitaxy
ESF -- Epi Stacking Fault
F
FBE -- Floating Body Effect
FET -- Field Effect Transistor
FD-SOI -- Fully Depleted Silicon-on-Insulator
FPD -- Flow Pattern Defect (ref. Crystal)
FPD -- Focal Plane Deviation (ref. Mechanical flatness)
FRAM -- Ferroelectric Random Access Memory
FTIR -- Fourier Transform Infra-Red Spectroscopy
FZ -- Float Zone method of Crystal Pulling
G
GBIR -- Global flatness, back-referenced GeOI -- Germanium-on-Insulator
GFA -- Gas Fusion Analysis
GOI -- Gate Oxide Integrity
GTIR -- Global Total Indicated Reading GUI -- Graphical User Interface
H
H2 -- Hydrogen gas
H2O2 -- Hydrogen Peroxide
HCl -- Hydrogen Chloride
HF -- Hydrofluoric Acid
HMOS -- High-performance MOS
HZ -- Hot Zone
I
IC -- Integrated Circuits
IDM -- Integrated Device Manufacturer
IG -- Internal Gettering
IGBT -- Insulated Gate Bipolar Transistor IQC -- Incoming Quality Control
ISO -- International Standards Organization ITOX -- Internal Oxidation
JFET -- Junction Field Effect Transistor
K
kg -- Kilogram
kN -- Kilo Newton
KOH -- Potassium Hydroxide
kP -- Kilo Pascal
KSIE -- Thousand Square Inch Equivalent
L
LAD -- Large Area Defect
Lg -- Transistor Gate Length
LLS -- Localized Light Scatterers
LLPD’s -- Large Light Point Defects
LPCVD -- Low Pressure Chemical Vapor Deposition
LPD’s -- Light Point Defects
LPD-E -- Light Point Defect, class E (a KLA-Tencor SP1 defect class) LPD-N -- Light Point Defect, class N (a KLA-Tencor SP1 defect class) LPD-S -- Light Point Defect, class S (a KLA-Tencor SP1 defect class) LPE -- Liquid Phase Epitaxy
LSE -- Latex Sphere Equivalent particle size
LSI -- Large-scale Integration
LSTD -- Laser Scattering Tomographic Detection
LTO -- Low Temperature Oxide
M9K -- MEMC proprietary polishing machine
MBE -- Molecular Beam Epitaxy
MDZ -- Magic Denuded Zone (gettering)
MEMS -- Micro-ElectroMechanical System
MIM -- Metal-Insulator-Metal
MLD -- Modified Low Dose
mm -- 1/1000 of a meter and 0.03937 inch
mm/min -- millimeters per minute
MNOS -- Metal Nitride Oxide Semiconductor
MOCVD -- MetalOrganic Chemical Vapor Deposition MODFET -- Modulation-Doped Field Effect Transistor
MOS -- Metal Oxide Semiconductor
MOSFET -- Metal Oxide Semiconductor Field Effect Transistor MRAM -- Magnetoresistive Random Access Memory
MSI -- Medium-scale Integration
MSIE -- Million Square Inch Equivalent
N
N -- Silicon doped to create excess negative charge carriers (electrons)
N+ -- Heavily doped, N-type silicon
NT -- Nanotopography
N2 -- Nitrogen gas
nm -- nanometers
NMOS -- N-channel Metal Oxide Semiconductor
NPT -- Non-Punch Through
O2 -- Oxygen
Oi -- Interstitial Oxygen
OISF -- Oxidation-Induced Stacking Fault
OPP -- Optical Precipitate Profiler
OUM -- Ovonics Unified Memory
P
P -- Silicon doped to create excess positive charge carriers (holes)
P- -- Lightly doped P-type silicon wafer
P+ -- Heavily doped P-type silicon wafer
P/P+ -- Lightly doped P-type epi layer on a heavily doped P-type substrate
P/P- -- Lightly doped P-type epi layer on a lightly doped P-type substrate
P-band -- Anomalous oxygen precipitation region in vicinity of the vacancy/interstitial boundary
PD-SOI -- Partially Depleted Silicon-on-Insulator
PECVD -- Plasma Enhanced Chemical Vapor Deposition Furnace PFRAM -- Polymeric Ferroelectric Random Access Memory
PFZ -- Precipitate Free Zone (depth measured from the surface that is free of
oxygen precipitates but not necessarily depleted in interstitial oxygen) PMOS -- P-channel Metal Oxide Semiconductor
PPB -- Parts Per Billion
PPC -- Post Polish Clean
PPE -- Personal Protective Equipment
PPM -- Parts Per Million
PPMA -- Parts Per Million Atomic
PPMD -- Parts Per Million Defective
PPT -- Parts Per Trillion
PROM -- Programmable Read-only Memory
PT -- Punch Through
P/V -- Peak to Valley measurement
PZT -- Lead Zirconate Titanate
Q
R
RAM -- Random Access Memory
RF -- Radio Frequency
RFCMOS -- Radio-Frequency Complementary Metal Oxide Semiconductor
ROM -- Read-only Memory
RSD -- Raised Source/Drain
RTA -- Rapid Thermal Anneal
RTP -- Rapid Thermal Process
S
SAC -- Submicron Application Crystal
SBIR -- Site flatness, back-referenced
SBSD -- Soft Backside Damage
SC1 -- 1st cleaning bath in the standard “RCA clean” sequence, consisting of
NH4OH / H202/ H20 solution designed to remove particles from Si surface
SC2 –2nd cleaning bath in the standard “RCA clean” sequence, consisting of
HCl / H202/ H20 solution designed to remove metals from Si surface
SCE -- Short Channel Effects
SEM -- Scanning Electron Microscope
SFQR -- Site flatness, best-fit, front-referenced
SFSR -- Site flatness, best-fit, front-referenced, scanning site
SGOI – Strained Si on SiGe on Insulator
Si -- Silicon
SIE -- Square Inch Equivalent
SIMOX -- Separation by Implantation of Oxygen
SIMS -- Secondary Ion Mass Spectroscopy
SiO -- Silicon Monoxide
SiO2 -- Silicon Dioxide
SIP -- Single In-line Package
SIRM -- Scanning Infra-red Microscope
SoC -- System-on-a-Chip
SOI -- Silicon-on-Insulator
SOS -- Silicon-on-Sapphire
SPT -- Soft Punch Through
SPV -- Surface Photovoltage
SRAM -- Static Random Access Memory
SRP -- Spreading Resistance Probe or Spreading Resistance Profile SSI -- Small-scale Integration
sSi -- Strained Silicon
SSIS -- Surface Scanning Inspection System
SSOI -- Strained Silicon directly on Insulator
SSP -- Single Side Polish
STD -- Standard
STD CZ -- Standard Czochralski-grown Crystal
STI -- Shallow Trench Isolation
STIR -- Site TIR (Total Indicated Reading)
T
T -- Temperature
TCS -- Trichlorosilane
TEM -- Transmission Electron Microscope
TIR -- Total Indicated Reading
TOX -- Gate Oxide Thickness
Tsoi -- Thickness of SOI top Si layer
TSOP -- Thin Small Outline Package
TTV -- Total Thickness Variation
U
ULSI -- Ultra Large-scale Integration
V
v/G -- v: growth rate (crystal pulling rate), G: vertical temperature gradient at
melt/solid interface
VI -- Vacancy Interstitial
VLSI -- Very Large-scale Integration
VPE -- Vapor Phase Epitaxy
W
WRFTIR -- Whole Rod Fourier Transform Infra-Red Spectroscopy X
XTL -- Crystal
Z
ZD -- Zero Dislocation。