AO3400A替代型号DMN3042L

DMN3042LN-CHANNEL ENHANCEMENT MODE MOSFETAO3400A 替代型号DMN3042LDescription and ApplicationsThis MOSFET is designed to minimize the on-state resistance(R DS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. ∙ Battery Charging∙ Power Management Functions ∙ DC-DC Converters ∙Portable Power AdaptorsFeatures and Benefits∙ Low On-Resistance ∙ Low Gate Threshold Voltage ∙ Low Input Capacitance ∙ Fast Switching Speed ∙ Low Input/Output Leakage∙ Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ∙Halogen and Antimony Free. “Green” Device (Note 3)Mechanical Data∙ Case: SOT23∙ Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 ∙Moisture Sensitivity: Level 1 per J-STD-020∙ Terminals: Finish − Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 ∙ Terminals Connections: See Diagram Below ∙Weight: 0.008 grams (Approximate)SOT23GTop ViewInternal SchematicOrdering Information (Note 4)Top View2. See /quality/lead_free.html fo r more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.4. For packaging details, go to our website at http”///products/packages.html.Marking InformationSOT234L = Product Type Marking Code YM = Date Code MarkingY or Y¯ = Year (ex: B = 2014) M = Month (ex: 9 = September)4LY MThermal CharacteristicsElectrical Characteristics (@T A = +25°C unless otherwise specified.)Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.7. Short duration pulse test used to minimize self-heating effect.8. Guaranteed by design. Not subject to product testing.V GS = 2.5VV GS V GS = 3.0V= 4.0V= 2.0VV GS = 1.5VV GS = 4.5VV GS = 10.0VV GS= 4.5VV G S = 10VR D S (O N ), D R A I N -S O U R C E O N -R E S I S T A N C E (N O R M A L I Z E D )R D S (O N ), D R A I N -S O U R C E O N -R E S I S T A N C E (Ω)I D , D R A I N C U R R E N T (A )30 25201051 2 3 4 5V DS , DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics1 1.5 V GS , GATE-SOURCE VOLTAGE (V) Figure2 Typical Transfer Characteristics0.0280.0260.0240.0220.020.0185 10 15 20 25 30I D , DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate VoltageV GS , GATE-SOURCE VOLTAGE (V)Figure 4 Typical Transfer Characteristic1.81.61.41.210.8246810 12 14 16 1820I D , DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature0.6 -50-25 0 25 50 75 100 125 150T J , JUNCTION TEMPERATURE ( C)Figure 6 On-Resistance Variation with Temperature= 4. = 5.05V AV GS I D = 5.8AV GS I D = 2.5V = 4.0AR D S (O N ), D R A I N -S O U R C E O N -R E S I S T A N C E (Ω)R D S (O N ), D R A I N -S O U R C E O N -R E S I S T A N C E (Ω)I D , D R A I N C U R R E N T (A )T A = 150°C T A = 125°C85°C = 25°CT = -55°C5.0AS = 10 VT A =150°C 125°C 85°CT A = -55°CV GS = 2.5VI D = 1 0AV GS = 4. V GS I D 5V = 10V = 5.8AI D = 5.0 AV DS = 15V I D = 6.9AI D , D R A I N C U R R E N T (A )V G S (t h ), G A T E T H R E S H O L D V O L T A G E (V )0.051.21.10.041 0.90.8 0.030.7 0.60.020.50.01-50 -25 0 25 50 75 100 125 150T J , JUNCTION TEMPERATURE (︒C)Figure 7 On-Resistance Variation with Temperature 200.40.3 -50-25255075 100 125 150T J , JUNCTION TEMPERATURE (︒C)Figure 8 Gate Threshold Variation vs. Ambient Temperature 1000016100012810040.30.60.91.2 1.5V SD , SOURCE-DRAIN VOLTAGE (V)Figure 9 Diode Forward Voltage vs. Current10100 10 05 10 15 20 25 30V DS , DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction CapacitanceR DS(on) Limited86= 10s 42 02 4 6 8 10 12 14Q g , TOTAL GATE CHARGE (nC)Figure 11 Gate Charge100V DS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation AreaI D = 1mAI D = 250µAT A = 150°CT A = 125°CA = 85°CT A T = -55°C A = 25°C f = 1M H zC issC ossC rssI S , S O U R C E C U R R E N T (A )R D S (O N ), D R A I N -S O U R C E O N -R E S I S T A N C E (Ω)V G S G A T E T H R E S H O L D V O L T A G E (V )C T , J U N C T I O N C A P A C I T A N C E (p F )A L F GM L 11D = 0.9D = 0.7 D = 0.5D = 0.30.1D = 0.1D = 0.05D = 0.020.01D = 0.01D = 0.005D = Single PulseR thja (t) = r(t) * R thja R thja = 168°C/WDuty Cycle, D = t1/ t2 0.001 A l 7°H G A U 0E .2 P 5L A N E 0.00001 0.0001 0.0010.01 0.1 1101001000t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal ResistanceK 1 K J aPackage Outline Dimensionsr (t ), T R A N S I E N T T H E R M A L R E S I S T A N C EDMN3042LPlease see AP02002 at /datasheets/ap02002.pdf for the latest version.C BDSuggested Pad LayoutPlease see AP02001 at /datasheets/ap02001.pdf for the latest version.YZCXEDMN3042L。