CNY65中文资料

CNY64/ CNY65/ CNY66Document Number 83540Vishay SemiconductorsOptocoupler, Phototransistor Output, Very High Isolation VoltageFeatures•Rated isolation voltage (RMS includes DC) V IOWM = 1000 V RMS (1450 V peak)•Rated recurring peak voltage (repetitive) V IORM = 1000 V RMS•Thickness through insulation ≥ 3 mm•Creepage current resistance according to V DE 0303/IEC 60112 C omparative T racking I ndex: CTI ≥ 200•Lead-free component•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECAgency Approvals•UL1577, File No. E76222 System Code H,J &K, Double Protection•DIN EN 60747-5-2 (V DE0884)DIN EN 60747-5-5 pending •V DE related features:•Rated impulse voltage (transient overvoltage)V IOTM = 8 k V peak•Isolation test voltage (partial discharge test volt-age) V pd = 2.8 k V peakApplicationsCircuits for safe protective separation against electri-cal shock according to safety class II (reinforced iso-lation):For appl. class I - I V at mains voltage ≤ 300 V For appl. class I - I V at mains voltage ≤ 600 VFor appl. class I - III at mains voltage ≤ 1000 V accord-ing to DIN EN 60747-5-2(V DE0884)/ DIN EN 60747-5-5 pending, table 2, suitable for:Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system inter-face.Order InformationDescriptionThe CNY64/ CNY65/ CNY66 consist of a phototrans-istor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin plastic package.The single components are mounted opposite one another, providing a distance between input and out-put for highest safety requirements of > 3 mm.VDE StandardsThese couplers perform safety functions according to the following equipment standards:DIN EN 60747-5-2(V DE0884)/ DIN EN 60747-5-5pendingOptocoupler for electrical safety requirementsIEC 60950/EN 60950Part RemarksCNY64CTR 50 - 300 %, High Isolation Distance, 4 PIN CNY65CTR 50 - 300 %, High Isolation Distance, 4 PIN CNY66CTR 50 - 300 %, High Isolation Distance, 4 PIN CNY64A CTR 63 - 125 %, High Isolation Distance, 4 PIN CNY65A CTR 63 - 125 %, High Isolation Distance, 4 PIN CNY64B CTR 100 - 200 %, High Isolation Distance, 4 PIN CNY65BCTR 100 - 200 %, High Isolation Distance, 4 PIN Document Number 83540CNY64/ CNY65/ CNY66Vishay SemiconductorsOffice machines (applied for reinforced isolation for mains voltage≤ 400 V RMS)VDE 0804Telecommunication apparatus and data processingIEC 60065Safety for mains-operated electronic and related household appa-ratusVDE 0700/IEC 60335Household equipmentVDE 0160Electronic equipment for electrical power installationVDE 0750/IEC 60601Medical equipmentAbsolute Maximum RatingsT amb = 25°C, unless otherwise specifiedStresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.InputOutputCouplerParameterTest conditionSymbol V alue Unit Reverse voltage V R 5V Forward current I F 75mA Forward surge current t p ≤ 10 µsI FSM 1.5A Power dissipation P diss 120mW Junction temperatureT j100°CParameterTest conditionSymbol V alue Unit Collector emitter voltage V CEO 32V Emitter collector voltage V ECO 7V Collector current I C 50mA Collector peak current t p /T = 0.5, t p ≤ 10 msI CM 100mA Power dissipation P diss 130mW Junction temperatureT j100°CParameterTest conditionSymbol V alue Unit AC isolation test voltage (RMS)t = 1 minV ISO 8.2k V Total power dissipation P tot 250mW Ambient temperature range T amb - 55 to + 85°C Storage temperature range T stg - 55 to + 100°C Soldering temperature2 mm from case, t ≤ 10 s T sld260°CCNY64/ CNY65/ CNY66Document Number 83540Vishay SemiconductorsElectrical CharacteristicsT amb = 25°C, unless otherwise specifiedMinimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.InputOutputCouplerCurrent Transfer RatioMaximum Safety Ratings(according to DIN EN 60747-5-2(V DE0884)/ DIN EN 60747-5-5 pending) see figure 1 This optocoupler is suitable for safe electrical isolation only within the safety ratings.Compliance with the safety ratings shall be ensured by means of suitable protective circuits.InputOutputParameterT est conditionSymbol MinT yp.Max Unit Forward voltage I F = 50 mA V F 1.25 1.6V Junction capacitanceV R = 0, f = 1 MHzC j50pFParameterT est conditionSymbol Min T yp.MaxUnit Collector emitter voltage I C = 1 mA V CEO 32V Emitter collector voltage I E = 100 µA V ECO 7V Collector-emitter leakage currentV CE = 20 V , I f = 0I CEO200nAParameterT est conditionSymbol MinT yp.Max Unit Collector emitter saturation voltageI F = 10 mA, I C = 1 mA V CEsat 0.3V Cut-off frequency V CE = 5 V , I F = 10 mA, R L = 100 Ωf c 110kHz Coupling capacitancef = 1 MHzC k0.3pFParameterT est conditionPartSymbol Min T yp.Max Unit I C /I FV CE = 5 V , I F = 10 mACTR 50300%CNY64A CTR 63125%CNY65A CTR 63125%CNY64B CTR 100200%CNY65B CTR100200%ParameterT est conditionSymbol MinT yp.Max Unit Forward currentI F120mAParameterT est conditionSymbol MinT yp.Max Unit Power dissipationP diss250mW Document Number 83540CNY64/ CNY65/ CNY66Vishay Semiconductors CouplerInsulation Rated ParametersParameterTest conditionSymbol MinTyp.Max Unit Rated impulse voltage V IOTM 8k V Safety temperatureT si150°CParameterTest conditionSymbol Min Typ.Max Unit Partial discharge test voltage - Routine test100 %, t test = 1 s V pd 2.8k V Partial discharge test voltage - Lot test (sample test)t T r = 60 s, t test = 10 s, (see figure 2)V IOTM 8k V V pd 2.2k V Insulation resistanceVIO = 500 V , T amb = 25°C R IO 1012ΩV IO = 500 V , T amb = 100°C R IO 1011ΩV IO = 500 V , T amb = 150°C(construction test only)R IO109ΩFigure 1. Derating diagram02550750255075100125150175200T amb (°C )9510922Figure 2. Test pulse diagram for sample test according to DIN EN60747-5-2(V DE0884)/ DIN EN 60747-; IEC6074713930V IOTMV Pd V IOWM VCNY64/ CNY65/ CNY66Document Number 83540Vishay SemiconductorsSwitching CharacteristicsParameterT est conditionSymbol Min T yp.Max Unit Delay time V S = 5 V , I C = 5 mA, R L = 100 Ω (see figure 3)t d 2.6µs Rise time V S = 5 V , I C = 5 mA, R L = 100 Ω (see figure 3)t r 2.4µs Fall time V S = 5 V , I C = 5 mA, R L = 100 Ω (see figure 3)t f 2.7µs Storage time V S = 5 V , I C = 5 mA, R L = 100 Ω (see figure 3)ts 0.3µs T urn-on time V S = 5 V , I C = 5 mA, R L = 100 Ω (see figure 3)t on 5.0µs T urn-off time V S = 5 V , I C = 5 mA, R L = 100 Ω (see figure 3)t off 3.0µs T urn-on time V S = 5 V , I F = 10 mA, R L = 1 k Ω (see figure 4)t on 25.0µs T urn-off timeV S = 5 V , I F = 10 mA, R L = 1 k Ω (see figure 4)t off42.5µsFigure 3. Test circuit, non-saturated operation Figure 4. Test circuit, saturated operation95 10900R G = 50 t pt p = 50 P T= 0.01adjusted throughinput amplitudeI FOscilloscope R L t 1 M W C L d 20 pFI II9510843R G =50t pt p =50T=0.01I F 0Oscilloscope R L ≥C L 20pFΩM 1≤µFigure 5. Switching Times10%I FI C t p pulse duration t d delay time t rrise time t on (=t d +t r )turn-on timet s storage time t ffall time t off (=t s +t f )turn-off time Document Number 83540CNY64/ CNY65/ CNY66Vishay SemiconductorsTypical Characteristics (Tamb = 25 °C unless otherwise specified)Figure 6. Total Power Dissipation vs. Ambient Temperature Figure 7. Forward Current vs. Forward V oltage Figure 8. Relative Current Transfer Ratio vs. AmbientTemperature255075100P –T o t a l P o w e r D i s s i p a t i o n (mW )t o t T amb –Ambient Temperature (°C )95110030.1110100100000.20.40.60.81.01.21.41.61.82.0V F -Forward Voltage (V )9611862F I -F o r w a r d C u r r e n t (m A )0.50.60.70.80.91.01.11.21.31.41.5–30–20–1001020304050607080T amb –Ambient T emperature (°C )9611911C T R –R e l a t i v e C u r r e n t Tr a n s f e r R a t i o r e l Figure 9. Collector Dark Current vs. Ambient TemperatureFigure 10. Collector Current vs. Forward CurrentFigure 11. Collector Current vs. Collector Emitter V oltage11010010000102030405060708090100T amb –Ambient T emperature (°C )9612000I –C o l l e c t o r D a r k C u r r e n t ,C E O w i t h o p e n B a s e (n A)0.11101I –C o l l e c t o r C u r r e n t (m A )C I F –Forward Current (mA )10095110120.11101V CE –Collector Emitter Voltage (V )1009511013I –C o l l e c t o r C u r r e n t (m A )CCNY64/ CNY65/ CNY66Document Number 83540Vishay SemiconductorsFigure 12. Collector Emitter Saturation V oltage vs. CollectorCurrentFigure 13. Current Transfer Ratio vs. Forward CurrentFigure 14. Turn on / off Time vs. Forward Current110100I C –Collector Current (mA )9611912V –C o l l e c t o r E m i t t e r S a t u r at i o n V o l t a g e (V )C E s a t0.1110110C T R –C u r r e n t T r a n s f e r R a t i o (%)IF –Forward Current (mA )100951101551015010********I F -Forward Current (mA )209511017t /t -T u r n o n /T u r n o f f T im e (µ s )o f f o n Figure 15. Turn on / off Time vs. Collector Current246I C -Collector Current (mA )109511016058t /t -T u r n o n /T u r n o f f T i m e (µ s )o f f o n Document Number 83540CNY64/ CNY65/ CNY66Vishay SemiconductorsPackage Dimensions in mmPackage Dimensions in mmCNY64/ CNY65/ CNY66Document Number 83540Vishay SemiconductorsPackage Dimensions in mm Document Number 83540CNY64/ CNY65/ CNY66Vishay SemiconductorsOzone Depleting Substances Policy StatementIt is the policy of V ishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution andoperatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban on these substances.V ishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.V ishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use V ishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify V ishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personaldamage, injury or death associated with such unintended or unauthorized use.V ishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423。