MEMS传感器研发手册
基于MEMS技术的微型力传感器设计与制备
基于MEMS技术的微型力传感器设计与制备引言:近年来,随着科技的迅猛发展,MEMS(Micro-Electro-Mechanical Systems,微电子机械系统)技术在各个领域都得到了广泛的应用。
其中,微型力传感器是MEMS技术的重要应用之一。
本文将着重探讨基于MEMS技术的微型力传感器的设计与制备的关键技术及应用前景。
1. 微型力传感器的发展历程1.1 传感器的定义和分类传感器是一种将感知的物理量转化为可测量电信号的设备。
根据测量的物理量不同,传感器可分为温度、压力、湿度、力量等不同分类。
1.2 微型力传感器的发展传统力传感器体积庞大,不利于微型化系统的集成。
而基于MEMS技术的微型力传感器由于具有体积小、重量轻、响应速度快等优势,逐渐成为研究的热点。
2. 微型力传感器的原理与设计2.1 弹性元件的选择弹性元件是微型力传感器的核心组件,常见的有梁型、薄膜型、基于微弯曲磁致伸缩等类型。
2.2 传感电路的设计传感电路用于将微型力传感器感知到的力量转化为电信号,并进行放大、滤波等处理。
3. 基于MEMS技术的微型力传感器的制备3.1 微加工工艺微加工工艺是基于MEMS技术制备微型力传感器的关键步骤,主要包括沉积、光刻、腐蚀、薄膜制备等技术。
3.2 材料的选择微型力传感器所使用的材料需具备良好的弹性特性、低应力漂移以及与加工工艺的兼容性等特点。
4. 微型力传感器的应用案例4.1 工业领域微型力传感器可用于测量机械设备的受力状态,辅助排除故障,提高生产效率。
4.2 医疗领域微型力传感器可用于测量人体肌肉力量的变化,帮助康复和运动训练。
5. 微型力传感器的未来发展方向5.1 小型化随着科技的进步,人们对传感器的需求越来越高。
未来的微型力传感器将会更小巧精致,便于集成和使用。
5.2 多功能化传统的微型力传感器往往只能单一测量力量,而未来的微型力传感器有望实现多功能化,例如结合温度、湿度等传感功能。
5.3 智能化未来的微型力传感器将更加智能化,能够通过无线传输数据,实时监测和分析力量的变化。
mems传感器芯片开发流程
mems传感器芯片开发流程mems传感器芯片是一种基于微机电系统(Micro-Electro-Mechanical Systems,MEMS)技术的传感器芯片,其具有体积小、功耗低、响应速度快等优点,被广泛应用于移动设备、智能家居、汽车电子等领域。
本文将介绍mems传感器芯片的开发流程。
一、需求分析在开发mems传感器芯片之前,首先需要进行需求分析。
开发者需要明确传感器芯片的功能和性能要求,包括测量范围、精度、响应时间、耐受环境等。
通过与客户、市场调研等渠道获取需求信息,为后续开发工作提供指导。
二、设计阶段设计阶段是mems传感器芯片开发的关键阶段。
首先,需要进行传感器的物理设计,包括结构设计、材料选择、工艺流程等。
其次,进行电路设计,包括信号放大、滤波、AD转换等电路设计。
最后,进行软件设计,包括传感器芯片的驱动程序编写、数据处理算法设计等。
三、制造流程制造mems传感器芯片的制造流程复杂且精细。
首先,需要进行晶圆制备,即将mems结构图案转移到硅晶圆上。
然后,进行工艺加工,包括刻蚀、光刻、沉积等工艺步骤,以形成mems结构。
接着,进行封装和测试,将mems芯片封装到封装盒中,并进行功能测试和可靠性测试。
四、验证和调试mems传感器芯片制造完成后,需要进行验证和调试。
验证主要包括功能验证和性能验证,通过实验和测试验证传感器芯片的测量精度、响应速度等性能指标是否符合设计要求。
调试主要是对传感器芯片的驱动程序进行优化和修正,以确保其稳定可靠地工作。
五、批量生产经过验证和调试,mems传感器芯片可以进行批量生产。
在批量生产过程中,需要建立完善的生产工艺和质量控制体系,确保产品的一致性和稳定性。
同时,进行产品的测试和筛选,将不合格品剔除,以保证产品质量。
六、应用和维护mems传感器芯片开发完成后,可以应用于各个领域。
在应用过程中,需要根据具体场景进行传感器的布置和安装,同时进行数据采集和处理。
此外,还需要对传感器进行维护和保养,定期进行校准和检测,以确保其正常工作。
BSIL-RO-MEMS型MEMS传感器读数仪安装使用手册说明书
BSIL-RO-MEMS型MEMS传感器读数仪安装使用手册(REV A)北京SOIL仪器有限公司______________________________________________________________________________________________________________________________________________________________________ 地址:北京市丰台区丰台科技园航丰路9号302室电话:************邮编:100071 传真:************网址:电子邮箱:*************.cn目录1.简介 (1)2.设备组成与面板布局 (1)3.传感器读数 (2)4.数据换算 (4)5.维护保养 (5)5.1常规保养 (5)5.2率定 (6)5.3电池充电 (6)6.故障排除 (6)7.主要技术参数 (7)附录-半导体温度计温度推导计算 (8)1.简介BSIL-RO-MEMS 型MEMS(微电子机械系统)传感器便携式读数仪是用来读取MEMS 型固定式测斜仪(或倾角计)传感器的电压输出量的读数装置,设备内置锂离子可充电电池,可重复充电使用。
为达到准确测量的目的,在使用前请务必仔细阅读本使用手册。
由于BSIL-RO-MEMS 型MEMS 传感器读数仪采用了先进的测量技术,因此电缆的长度不会对仪器读数产生影响。
2.设备组成与面板布局读数仪由12V/1.2Ahr的铅酸电池、4.5位超大屏幕液晶(LCD) 数码显示屏、电源开关、功能选择器、输入连接电缆(接线夹)、充电器组成。
功能选择旋钮传感器连接插座电源开关面板的功能按键及说明:传感器连接插座:为10针插座,用于连接配套的传感器接线夹,使用时将接线夹插头上的定位槽与插座上的定位凹槽对准后插入,然后将插头顺时针拧紧(会听到“咔嗒”声)即可。
充电插座:用于连接配套的充电器为内置的锂离子电池充电,电池完全放空后将电池充满约需要12小时。
MEMS加速度传感器的研究报告
MEMS加速度传感器的研究报告MEMS(Micro-Electro-Mechanical Systems)加速度传感器是一种基于微纳技术制造的传感器,用于测量物体加速度的工具。
它具有小尺寸、低成本、高精度等优点,被广泛应用于汽车安全系统、移动设备、航空航天等领域。
本文主要对MEMS加速度传感器的原理、制造工艺、应用以及发展趋势进行研究和分析。
首先,MEMS加速度传感器的原理是基于微机械系统的振动原理。
当传感器受到加速度作用时,会引起传感器内部的微结构振动。
通过测量这种振动信号的变化,即可获得物体的加速度信息。
通常,MEMS加速度传感器采用谐振质量块和弹性支撑等微结构来实现。
其次,MEMS加速度传感器的制造工艺主要包括光刻、离子刻蚀、薄膜沉积等步骤。
首先,利用光刻技术在硅片上形成所需的结构图案。
然后,通过离子刻蚀方法将不需要的部分去除,形成谐振质量块和弹性支撑等微结构。
最后,通过薄膜沉积技术在微结构上形成感应电极,完成传感器的制造。
MEMS加速度传感器在众多领域有着广泛的应用。
在汽车安全系统中,它可以检测到车辆的碰撞或急刹车等情况,从而触发安全气囊的部署。
在移动设备中,它可以用于屏幕自动旋转、运动跟踪等功能。
在航空航天领域,它可以用于飞机的姿态稳定和导航系统的精确定位等。
随着技术不断发展,MEMS加速度传感器也呈现出一些新的趋势。
首先,尽管MEMS加速度传感器已取得很大进展,但其精度仍有提高的空间。
未来的研究将集中于提高传感器的精度和稳定性,以满足更高精度的应用需求。
其次,为了应对多种复杂环境下的应用需求,MEMS加速度传感器还需要增强其抗干扰能力和适应性。
此外,随着物联网技术的快速发展,MEMS加速度传感器将与其他传感器相结合,为更广泛的应用提供数据和支持。
综上所述,MEMS加速度传感器是一种重要的微纳技术应用,具有广泛的应用前景。
通过对其原理、制造工艺、应用和发展趋势的研究,可以更好地理解和推动该技术的发展,为相关领域的应用提供更好的解决方案。
基于MEMS技术的微电子感应器设计与制备
基于MEMS技术的微电子感应器设计与制备随着科技的不断进步,微电子感应器在各个领域的应用越来越广泛。
基于MEMS(Micro-Electro-Mechanical Systems)技术的微电子感应器不仅具有小型化、高灵敏度和低功耗等优势,还能够实现集成化和多功能化。
本文将探讨基于MEMS技术的微电子感应器的设计与制备过程,并介绍其在生物医学、环境监测和智能物联网等领域的应用。
一、微电子感应器的设计微电子感应器的设计是整个制备过程中的关键环节。
首先,需要确定感应器的类型和工作原理。
常见的微电子感应器包括压力传感器、加速度传感器、温度传感器等。
根据不同的应用需求,选择合适的感应器类型。
其次,需要进行感应器的结构设计。
在设计过程中,需要考虑到感应器的灵敏度、响应时间和稳定性等因素。
通过优化结构参数,可以提高感应器的性能。
例如,在压力传感器的设计中,可以通过调整薄膜的材料和厚度来提高其灵敏度和稳定性。
最后,需要进行电路设计。
微电子感应器通常需要与电路进行配合工作,将感应信号转化为电信号输出。
电路设计需要考虑到信号放大、滤波和模数转换等功能。
通过合理的电路设计,可以提高感应器的信噪比和动态范围。
二、微电子感应器的制备微电子感应器的制备是一个复杂的过程,包括材料选择、工艺流程和封装等环节。
首先,需要选择合适的材料。
常见的微电子感应器材料包括硅、玻璃和聚合物等。
根据不同的应用需求,选择具有合适性能的材料。
其次,需要进行工艺流程的设计。
工艺流程包括光刻、薄膜沉积、离子注入和金属薄膜制备等步骤。
通过合理的工艺流程设计,可以实现感应器结构的精确控制和制备。
最后,需要进行感应器的封装。
封装是保护感应器的重要环节,可以防止外界环境对感应器的影响。
常见的封装方式包括芯片封装和模块封装。
根据不同的应用需求,选择合适的封装方式。
三、基于MEMS技术的微电子感应器的应用基于MEMS技术的微电子感应器在各个领域的应用越来越广泛。
OMRON MEMS流量传感器D6F-V03A1说明书
The unique dust separating structure, developed by OMRON is a compact and highly efficient FLOW-SENSOR.•A dust-resistant design has been taken into consideration, by the original dust segregation structure, of OMRON.•+/-10% Full-Scale repeatable accuracy achieves consistent air velocity measurement.•Applications include clogged-filter detection and air velocity.Sensor specificationAbsolute maximum ratingOutput characteristicMeasurement condition: Power-supply voltage 3.3VDC, ambient temperature 25°C and dry air.Note:1.Air velocity is the value converted from the mass-flow in OMRON regulation wind tunnel phi48mm.2.The air velocity, set to the Measurement Law, is not shown. Please confirm in a real use environment in use.3.T emperature characteristics:Over ambient temperature range -10 to +60°C: within ±20% F .S. of detected characteristics Of at +25°C.Type D6F-V03A1Flow Range 0 – 3 m/s @ 25°C, 1 atmosphere Case Material Thermoplastic resin GasAirAmbient Temperature -10 to +60°C (with no condensation)Using Humidity Max. 85% RH (with no condensation)Storage Temperature -40 to +80°C (with no condensation)Preservation Humidity Max. 85% RH (with no condensation)Power Supply Voltage 3.15 to 3.45 VDCOutput Signal Analog output 0.5 to 2 VDC (non-linear output)Load resistance min. 10k ΩCurrent Consumption Max. 15mA (No-load, V CC = 3.3 VDC, 25°C)Insulation Resistance20Mohm min. (500VDC, between lead terminal and the case)Dielectric Withstanding Voltage Leakage current is 1mA max. (at 500 VAC, 50/60Hz for one minute).500VAC, 50/60Hz judged at 1mA max. (between the lead terminals and the case)ItemSymbol Rating Unit Power supply voltage V CC 12.0VDC Output voltageV OUT3.0VDCFlow Velocity (m/sec)00.75 1.50 2.25 3.00Output Voltage (VDC)0.50±0.150.70±0.151.11±0.151.58±0.152.00±0.15DimensionsOmron Electronic Components, LLCTerms and Conditions of Sales1.Definitions: The words used herein are defined as follows.(a) Terms:These terms and conditions(b) Seller:Omron Electronic Components LLC and its subsidiaries(c) Buyer:The buyer of Products, including any end user in section III through VI(d) Products:Products and/or services of Seller(e) Including:Including without limitation2.Offer; Acceptance: These Terms are deemed part of all quotations, acknowledgments,invoices, purchase orders and other documents, whether electronic or in writing, relating to the sale of Products by Seller. 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Buyer (at its own expense) shall indemnify and hold harmless Seller and defend or settle any action brought against Seller to the extent that it is based on a claim that any Product made to Buyer specifications infringedintellectual property rights of another party.2.Property; Confidentiality: Notwithstanding any charges to Buyer for engineering ortooling, all engineering and tooling shall remain the exclusive property of Seller. All information and materials supplied by Seller to Buyer relating to the Products areconfidential and proprietary, and Buyer shall limit distribution thereof to its trustedemployees and strictly prevent disclosure to any third party.3.Performance Data: Performance data is provided as a guide in determining suitabilityand does not constitute a warranty. It may represent the result of Seller's test conditions, and the users must correlate it to actual application requirements.4.Change In Specifications: Product specifications and description may be changed at anytime based on improvements or other reasons. It is Seller’s practice to change part numbers when published ratings or features are changed, or when significantengineering changes are made. However, some specifications of the Product may be changed without any notice.5.Errors And Omissions: The information on Seller’s website or in other documentationhas been carefully checked and is believed to be accurate; however, no responsibility is assumed for clerical, typographical or proofreading errors or omissions.6.Export Controls: Buyer shall comply with all applicable laws, regulations and licensesregarding (a) export of the Products or information provided by Seller; (b) sale ofProducts to forbidden or other proscribed persons or organizations; (c)disclosure to non-citizens of regulated technology or information.1.Waiver: No failure or delay by Seller in exercising any right and no course of dealingbetween Buyer and Seller shall operate as a waiver of rights by Seller.2.Assignment: Buyer may not assign its rights hereunder without Seller's written consent.w: These Terms are governed by Illinois law (without regard to conflict of laws). Federaland state courts in Illinois have exclusive jurisdiction for any dispute hereunder.4.Amendment: These Terms constitute the entire agreement between Buyer and Sellerrelating to the Products, and no provision may be changed or waived unless in writing signed by the parties.5.Severability: If any provision hereof is rendered ineffective or invalid, such provision shallnot invalidate any other provision.Certain Precautions on Specifications and UseOMRON ON-LINEGlobal - USA - Cat. No. J01C-E-01Printed in USAOMRON ELECTRONIC COMPONENTS LLC55 E. Commerce Drive, Suite B Schaumburg, IL 60173847-882-228801/07 Specifications subject to change without noticeComplete “Terms and Conditions of Sale” for product purchase and use are on Omron’s website at – under the “About Us” tab, in the Legal Matters section.ALL DIMENSIONS SHOWN ARE IN MILLIMETERS.T o convert millimeters into inches, multiply by 0.03937. To convert grams into ounces, multiply by 0.03527.。
MICHELIN MEMS EVOLUTION 4 流体防护传感器用户手册说明书
Manuals+— User Manuals Simplified.MICHELIN Mems Evolution 4 Liquid Proof Sensor Owner’s ManualHome » MICHELIN » MICHELIN Mems Evolution 4 Liquid Proof Sensor Owner’s Manual PRODUCT NOTICEContents1 PRODUCT NAME MEMS2 PRODUCT DESCRIPTION3 FCC / IC CERTIFICATION4 PRODUCT SPECIFICATION5 DISPOSAL6 CONTACT DETAILS — TechnicalSupport7 Documents / ResourcesPRODUCT NAME MEMSEVOLUTION-4 LIQUID PROOF SENSOR — Part Number CA1564947PRODUCT DESCRIPTIONThe MEMS EVOLUTION-4 LIQUID PROOF SENSOR is a battery powered air pressure and air temperature sensor designed to operate inside tubeless earthmover tires.This information is sent, via a radio transmitter, to a MEMS EVOLUTION-4 TRANSCEIVER unit, which is usually mounted in the cab of the vehicle.FCC / IC CERTIFICATIONModel: RV1-30 FCC ID: F15-RV1-30G HVIN: RV1-30 IC: 5056A-RV130GPMN: MEMS EVOLUTION 4 LIQUID PROOF SENSORFederal Communications Commission (FCC) Statement 15.19 This device complies with Part 15 of the FCC Rules. Operation is subject to the following two conditions: 1) this device may not cause harmful interference and 2) this device must accept any interference received, including interference that may cause undesired. 15.195(a) This equipment has been tested and found to comply with the limits for a Class A digital device, pursuant to part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference when the equipment is operated in a commercial environment. This equipment generates, uses, and can radiate radio frequency energy and, if not in stalled and used in accordance with the instruction manual, may cause harmful interference to radio communications. Operation of this equipment in a residential area is likely to cause harmful interference in which case the user will be required to correct the interference at his own expense.’‘15.21 You are cautioned that changes or modifications not expressly approved by the part responsible for compliance could void the user’s authority to operate the equipment.”‘FCC RF Radiation Exposure Statement:1. This Transmitter must not be co-located or operating in conjunction with any other antenna or transmitter.”2. This equipment complies with FCC RF radiation exposure limits set forth for an uncontrolled environment. Thisequipment should be installed and operated with a minimum distance of 29 centimeters between th e radiator and your body.Devices shall not be used for control of or communic ations with unmanned aircraft systems.Caution: Exposure to Radio Frequency Radiation1. To comply with the Canadian RF exposure compliance requirements, this device and its antenna must notbe co-located or operating in conjunction with any other antenna or transmitter.”2. To comply with RSS 192 RF exposure compliance requirements, a separation distance of at least 20 cm mustbe maintained between the antenna of this device and all persons.****************************MFP MICHELIN 23 Place des Carmes-Dechaux 63000 Clermont-Ferrand France The product must not be disposed of with unsorted waste, but must be sent to separate collection facilities for recovery and recycling Features, specifications are subject to change without notification. Document version 17.0 MFP MICHELIN © 2012 All rights reserved. Exclusive property of Manufacture Francaise des Pneumatiques Michelin. Any reproduction or utilization prohibited without the consent of Michelin.Documents / ResourcesMICHELIN Mems Evolution 4 Liquid Proof Sensor [pdf] Owner's ManualRV1-30G, FI5-RV1-30G, FI5RV130G, Mems Evolution 4, Liquid Proof Sensor, Mems Evolution4 Liquid Proof Sensor, SensorManuals+,。
MEMS CO 气体传感器使用说明书
MEMS CO气体传感器(型号:GM-702B)使用说明书版本号:2.2实施日期:2020.08.25郑州炜盛电子科技有限公司Zhengzhou Winsen Electronic Technol ogy Co.,Ltd声明本说明书版权属郑州炜盛电子科技有限公司(以下称本公司)所有,未经书面许可,本说明书任何部分不得复制、翻译、存储于数据库或检索系统内,也不可以电子、翻拍、录音等任何手段进行传播。
感谢您使用炜盛科技的系列产品。
为使您更好地使用本公司产品,减少因使用不当造成的产品故障,使用前请务必仔细阅读本说明书并按照所建议的使用方法进行使用。
如果您不依照本说明书使用或擅自去除、拆解、更换传感器内部组件,本公司不承担由此造成的任何损失。
您所购买产品的颜色、款式及尺寸以实物为准。
本公司秉承科技进步的理念,不断致力于产品改进和技术创新。
因此,本公司保留任何产品改进而不预先通知的权力。
使用本说明书时,请确认其属于有效版本。
同时,本公司鼓励使用者根据其使用情况,探讨本产品更优化的使用方法。
请妥善保管本说明书,以便在您日后需要时能及时查阅并获得帮助。
郑州炜盛电子科技有限公司GM-702B CO气体传感器产品描述MEMS一氧化碳气体传感器利用MEMS工艺在Si基衬底上制作微热板,所使用的气敏材料是在清洁空气中电导率较低的金属氧化物半导体材料。
当环境空气中有被检测气体存在时传感器电导率发生变化,该气体的浓度越高,传感器的电导率就越高。
使用简单的电路即可将电导率的变化转换为与该气体浓度相对应的输出信号。
传感器特点本品采用MEMS工艺,结构坚固,对一氧化碳灵敏度高;具有尺寸小、功耗低、灵敏度高、响应恢复快、驱动电路简单、稳定性好、寿命长等优点。
主要应用家庭用一氧化碳气体泄漏报警器、工业用一氧化碳气体报警器以及便携式一氧化碳气体检测器等。
技术指标表1产品型号GM-702B产品类型MEMS一氧化碳气体传感器标准封装陶瓷封装检测气体一氧化碳检测浓度5ppm~5000ppm CO标准电路条件回路电压V C≤24V DC加热电压V H2.5V±0.1V AC or DC(高温)0.5V±0.1V AC or DC(低温)加热时间T L60s±1s(高温),90s±1s(低温)负载电阻R L可调标准测试条件下气敏元件特性加热电阻R H80Ω±20Ω(室温)加热功耗P H≤50mW敏感体电阻R S1KΩ~30KΩ(in150ppmCO)灵敏度S R0(in air)/Rs(in150ppmCO)≥3标准测试条件温度、湿度20℃±2℃;55%RH±5%RH 标准测试电路V H:2.5V±0.1V(高温)0.5V±0.1V(低温)V C:5.0V±0.1V传感器结构示意图引脚连接①R H1②③R H2④⑤R S1⑥⑦R S2⑧底视尺寸图(单位:mm )外形图底视引脚布置图①②③④⑧⑦⑥⑤基本电路图2GM-702B 测试电路VcV H+2.5V/0.5V图1传感器结构示意图说明:上图为GM-702B传感器的基本测试电路。
OMRON MEMS热敏传感器D6T说明书
MEMS Thermal SensorsD6TContactless measurementcreating energy-efficient and comfortable living spacesMEMS Thermal Sensors D6THigh Accuracy, Smaller Footprint, East to Work WithOMRON's unique MEMS technology allows combining thermopile elements and ASICs into one package resulting to ultra-compact footprint.Infrared rayAchieving the highest level of SNR* in the world ** SNR: Signal-to-Noise Ratio. Compares the level of a signal to the level of background noise *2 As of December 2017, according to OMRON researchConverts sensor signal to digital temperature output allowing easy use of microcontrollerSpace-saving design,well-suited for embedded applicationsEasy connectionCompact sizeSilicon lens far-infrared focusingDetection principleThermopileHot junctionInfrared ray Cold junctionMEMS Thermal (IR* sensor) measures the surface temperature of objects without touching them when the thermopile element absorbs the amount of radiant energy from the object.*IR: Infrared RayLow noiseCross-section view of D6T sensorThe sensor utilizes the seebeck effect in which thermoelectric force is generated due to the temperature difference that occurs 3Detection results of temperature distribution5MEMS Thermal Sensors D6TObject DetectionD6T sensors can detect objects by pinpointing the target object temperature.6D6T sensor meets customer needs byproviding a wide range of application support from home appliances to industrial use.D6T sensors let you measure temperature without the need to physically touch the object.This allows measuring temperature where it was not possible for contact thermal sensors due to space shortage.The sensors can be used in a wide range of applications including FEMS (Factory EnergyManagement System).7MEMS Thermal Sensors D6TComparison with Pyroelectric SensorAble to detect human (object) motionUnable to detect stationary human (object) presenceAble to detect human (object) motionAble to detect both stationary and motion state of humans (objects).Both the pyroelectric sensor and non-contact MEMS thermal sensor can detect even the slightest amount of radiant energy from objects such as infrared radiation and convert them into temperaturereadings. However, unlike pyroelectric sensor that relies on motion detection, non-contact MEMS thermal sensor is able to detect the presence of stationary humans (or objects).Converts temperature readings only when detecting “temperature changes in the radiant energy” in its field of view.Converts temperature readings by “continuously detecting the temperature of radiant energy” in its field of view8X = 58.0°Y = 58.0°X = 111cmY = 111cmX = 222cmY = 222cmX = 333cmY = 333cmX = 47cmY = 47cmX = 94cmY = 94cmX = 141cmY = 141cmX = 103cmY = 10cmX = 206cmY = 20cmX = 309cmY = 30cmX = 81cmY = 84cmX = 162cmY = 169cmX = 244cmY = 253cmX = 200cmY = 200cmX = 400cmY = 400cmX = 600cmY = 600cm1(1x1)8(1x8)16(4x4)X = 26.5°Y = 26.5°X = 54.5°Y = 5.5°X=44.2°Y=45.7°1024(32x32)X=90.0°Y=90.0°Viewing Angle and Measurement AreaChoose your preferred sensor viewing angle to meet your application needs.* The sizes of measurement area indicated above are for reference only.* The size of measurement area changes according to sensor mounting angle.DistanceNumber ofelementsAppearanceSize ofmeasurementareaDistance 1mDistance 2mDistance 3mNumber ofelementsX-directionY-directionDistance Distance Distance910D 6THigh Sensitivity Enables Detection of Stationary Human Presence•OMRON’s unique MEMS and ASIC technology achieve a high SNR.•Superior noise immunity with a digital output.•High-precision area temperature detection with low cross-talk field of view characteristics.Ordering InformationThermal SensorsAccessories (Sold separately)Model Number Legend(1) Number of elements 44L : 16 (4 ✕ 4)8L : 8 (1 ✕ 8)1A : 1 (1 ✕ 1)32L : 1024 (32 ✕ 32)(2) Viewing angle06: X direction=44.2°, Y direction=45.7°09: X direction=54.5°, Y direction=5.5°01: X direction, Y direction=58.0°02: X direction, Y direction=26.5°01A : X direction, Y direction=90.0°(3) Special Functions H : High-temperature type Non-display : Standard sensorRoHS CompliantRefer to Safety Precautions on page 17.Type Model Cable HarnessD6T-HARNESS-0211D6TMEMS Thermal SensorsD 6TRatings, Specifications, and FunctionsRatingsCharacteristicsFunctions*1.Refer to Field of View Characteristics .*2.Refer to Object Temperature Detection Range .*3.Reference data*4.Taken to be the average value of the central 4 pixels.ItemModelD6T-44L-06/06HD6T-8L-09/09HD6T-1A-01D6T-1A-02D6T-32L-01A Power supply voltage 4.5 to 5.5 VDC Storage temperature range -10 to 60°C -20 to 80°C-20 to 80°C-40 to 80°C -20 to 80°C (with no icing or condensation)Operating temperature range 0 to 50°C 0 to 60°C 0 to 60°C-40 to 80°C -10 to 70°C (with no icing or condensation)Storage humidity range 85% max.95% max.95% max.95% max.95% max.(with no icing or condensation)Operating humidity range20% to 85%20% to 95%20% to 95%20% to 95%20% to 95%(with no icing or condensation)Item Model D6T-44L-06/06H D6T-8L-09/09H D6T-1A-01D6T-1A-02D6T-32L-01AView angle *1X direction 44.2°54.5°58.0°26.5°90°Y direction45.7°5.5°58.0°26.5°90°Object temperature output accuracy *2Accuracy 1±1.5°C max.Measurement conditions: Vcc = 5.0 V (1) Tx = 25°C, Ta = 25°C (2) Tx = 45°C, Ta = 25°C (3) Tx = 45°C, Ta = 45°CWithin ±3.0°CMeasurementconditions: Vcc = 5.0 V Tx = 25°C, Ta = 25°C Central 16-pixel area Accuracy 2±3.0°C max.Measurement conditions: Vcc = 5.0 V (4) Tx = 25°C, Ta = 45°C Within ±5.0°C Measurementconditions: Vcc = 5.0 V Tx = 80°C, Ta = 25°C Central 16-pixel areaCurrent consumption5 mA typical3.5 mA typical19 mA typicalItemModelD6T-44L-06/06H D6T-8L-09/09H D6T-1A-01D6T-1A-02D6T-32L-01A Object temperature detection range *25 to 50°C/5 to 200°C 5 to 50°C/5 to 200°C 5 to 50°C -40 to 80°C 0 to 200°C Reference temperature detection range *25 to 45°C5 to 45°C5 to 45°C-40 to 80°C0 to 80°COutput specifications Digital values that correspond to the object temperature (Tx) and reference temperature(Ta) are output from a serial communications port.Output formBinary code (10 times the detected temperature (°C))Communications formI2C compliant Temperature resolution (NETD) *30.06°C0.03°C0.02°C0.06°C0.33°C *412D6TMEMS Thermal SensorsD 6TObject Temperature Detection RangeD6T-44L-06, D6T-8L-09, D6T-1A-01D6T-44L-06H, D6T-8L-09HD6T-1A-02D6T-32L-01AConnectionsThermal Sensor Configuration Diagram<D6T-8L-09/09H>Note:The D6T-44L-06/06H has pixels 0 to 15.The D6T-1A-01/02 has pixel 0.The D6T-32L-01A has pixel 0 to 1023.Terminal Arrangement: Object temperature detection range5101520253035404550-10020406080100120140160180200Object temperature Tx (°C)R e f e r e n c e t e m p e r a t u r e T a (°C )Object temperature Tx (°C)R e f e r e n c e t e m p e r a t u r e Ta (°C ): Object temperature detection range-10102030405060708090-10020406080100120140160180200Terminal NameFunctionRemarks1GND Ground2VCC Positive power supply voltage input 3SDA Serial data I/O line Connect the open-drain SDA terminal to a pull-up resistor.4SCLSerial clock inputConnect the open-drain SCL terminal to a pull-up resistor.13D6TMEMS Thermal SensorsD 6TField of View CharacteristicsD6T-44L-06/06HField of view in X Directionence, the angular range where the Sensor output is 50% or higher whenthe angle of the Sensor is changed is defined as the view angle.X directionY direction++−−P0P4P1 P5P2 P6P3P7D6T-8L-09/09HField of view in X DirectionField of view in Y DirectionDetection Area for Each PixelNote:Definition of view angle: Using the maximum Sensor output as a refer-ence, the angular range where the Sensor output is 50% or higher whenthe angle of the Sensor is changed is defined as the view angle.14D6TMEMS Thermal SensorsD 6TD6T-1A-01Field of view in X DirectionField of view in Y DirectionDetection Area for Each PixelD6T-1A-02Field of view in X DirectionField of view in Y DirectionNote:Definition of view angle: Using the maximum Sensor output as a refer-ence, the angular range where the Sensor output is 50% or higher when the angle of the Sensor is changed is defined as the view angle.D6T-32L-01AField of view in X DirectionField of view in Y DirectionDetection Area for Each PixelNote:Definition of view angle: Using the maximum Sensor output as a refer-ence, the angular range where the Sensor output is 50% or higher when the angle of the Sensor is changed is defined as the view angle.15D6TMEMS Thermal SensorsD 6TDimensions (Unit: mm)Note:Unless otherwise specified, a tolerance of ±0.3 mm applies to all dimensions.D6T-44L-06/06HSupporting and Mounting Area (Shaded Portion)Top ViewNote:Due to insulation distance limitations, donot allow metal parts to come into contactwith the Sensor.D6T-8L-09/09HSupporting and Mounting Area (Shaded Portion)Note:Due to insulation distance limitations, donot allow metal parts to come into contact with the Sensor.16D6TMEMS Thermal SensorsD 6TD6T-1A-01/02Supporting and Mounting Area (Shaded Portion)Top Viewmetal parts to come into contact with the Sensor.17D6TMEMS Thermal SensorsD 6TSafety Precautions●Installation•The Sensor may not achieve the characteristics given in this datasheet due to the ambient environment or installation loca-tion. Before using the Sensor, please acquire an adequate understanding and make a prior assessment of Sensor char-acteristics in your actual system.●Operating Environment•Do not use the Sensor in locations where dust, dirt, oil, and other foreign matter will adhere to the lens. This may prevent correct temperature measurements.•Do not use the Sensor in any of the following locations.•Locations where the Sensor may come into contact with water or oil •Outdoors•Locations subject to direct sunlight.•Locations subject to corrosive gases (in particular, chlo-ride, sulfide, or ammonia gases).•Locations subject to extreme temperature changes •Locations subject to icing or condensation.•Locations subject to excessive vibration or shock.●Noise Countermeasures•The Sensor does not contain any protective circuits. Never subject it to an electrical load that exceeds the absolute maxi-mum ratings for even an instance. The circuits may be dam-aged. Install protective circuits as required so that the absolute maximum ratings are not exceeded.•Keep as much space as possible between the Sensor anddevices that generates high frequencies (such as high-frequency welders and high-frequency sewing machines) or surges.•Attach a surge protector or noise filter on nearby noise-generating devices (in particular, motors, transformers, solenoids, magnetic coils, or devices that have an inductance component).•In order to prevent inductive noise, separate the connector of the Sensor from power lines carrying high voltages or large currents. Using a shielded line is also effective.•If a switching requlator is used, check that malfunctions will not occur due to switching noise from the power supply.●Handling•This Sensor is a precision device. Do not drop it or subject it to excessive shock or force. Doing so may damage the Sensor or change its characteristics. Never subject the connector to unnecessary force. Do not use a Sensor that has been dropped.•Take countermeasures against static electricity before you handle the Sensor.•Turn OFF the power supply to the system before you install the Sensor. Working with the Sensor while the power supply is turned ON may cause malfunctions.•Secure the Sensor firmly so that the optical axis does not move.•Install the Sensor on a flat surface. If the installation surface is not even, the Sensor may be deformed, preventing correct measurements.•Do not install the Sensor with screws. Screws may cause the resist to peel from the board. Secure the Sensor in a way that will not cause the resist to peel.•Always check operation after you install the Sensor.•Use the specified connector (GHR-04 from JST) and connect it securely so that it will not come off. If you solder directly to the connector terminals, the Sensor may be damaged.•Make sure to wire the polarity of the terminals correctly. Incor-rect polarity may damage the Sensor.•Never attempt to disassemble the Sensor.•Do not use the cable harness to the other product.Precautions for Correct Use18Terms and Conditions AgreementRead and understand this catalog.Please read and understand this catalog before purchasing the products. Please consult your OMRON representative if you have any questions or comments.Warranties.(a) Exclusive Warranty. Omron’s exclusive warranty is that the Products will be free from defects in materials and workmanshipfor a period of twelve months from the date of sale by Omron (or such other period expressed in writingby Omron). Omron disclaims all other warranties, express or implied.(b) Limitations. OMRON MAKES NO WARRANTY OR REPRESENTATION, EXPRESS OR IMPLIED, ABOUTNON-INFRINGEMENT, MERCHANTABILITY OR FITNESS FOR A P ARTICULAR PURPOSE OF THEPRODUCTS. BUYER ACKNOWLEDGES THAT IT ALONE HAS DETERMINED THAT THE PRODUCTS WILLSUITABL Y MEET THE REQUIREMENTS OF THEIR INTENDED USE.Omron further disclaims all warranties and responsibility of any type for claims or expenses based on infringement by the Products or otherwise of any intellectual property right. (c) Buyer Remedy. Omron’s sole obligation hereunder shall be, at Omron’s election,to (i) replace (in the form originally shipped with Buyer responsible for labor charges for removal or replacement thereof) thenon-complying Product, (ii) repair the non-complying Product, or (iii) repay or credit Buyer an amount equal to the purchase priceof the non-complying Product; provided that in no event shall Omron be responsible for warranty, repair, indemnity or any other claims or expenses regarding the Products unless Omron’s analysis confirms that the Products were properly handled, stored, installed and maintained and not subject to contamination, abuse, misuse or inappropriate modification. Return of any Products by Buyer must be approved in writing by Omron before shipment. Omron Companies shall not be liable for the suitability or unsuitability or the results from the use of Products in combination with any electrical or electronic components, circuits, system assemblies or any other materials or substances or environments. Any advice, recommendations or information given orally or in writing, are not to be construed as an amendment or addition to the above warranty.See /global/ or contact your Omron representative for published information.Limitation on Liability; Etc.OMRON COMPANIES SHALL NOT BE LIABLE FOR SPECIAL, INDIRECT, INCIDENTAL, OR CONSEQUENTIAL DAMAGES, LOSS OF PROFITS OR PRODUCTION OR COMMERCIAL LOSS IN ANY WAY CONNECTED WITH THE PRODUCTS, WHETHER SUCH CLAIM IS BASED IN CONTRACT, WARRANTY, NEGLIGENCE OR STRICT LIABILITY.Further, in no event shall liability of Omron Companies exceed the individual price of the Product on which liability is asserted.Suitability of Use.Omron Companies shall not be responsible for conformity with any standards, codes or regulations which apply to the combination of the Product in the Buyer’s application or use of the Product. At Buyer’s request, Omron will provide applicablethird party certification documents identifying ratings and limitations of use which apply to the Product. This information by itself is not sufficient for a complete determination of the suitability of the Product in combination with the end product, machine, system,or other application or use. Buyer shall be solely responsible for determining appropriateness of the particular Product withrespect to Buyer’s application, product or system. Buyer shall take application responsibility in all cases.NEVER USE THE PRODUCT FOR AN APPLICA TION INVOLVING SERIOUS RISK TO LIFE OR PROPERTY OR IN LARGE QUANTITIES WITHOUT ENSURING THAT THE SYSTEM AS A WHOLE HAS BEEN DESIGNED TO ADDRESS THE RISKS, AND THAT THE OMRON PRODUCT(S) IS PROPERL Y RATED AND INSTALLED FOR THE INTENDED USE WITHIN THE OVERALL EQUIPMENT OR SYSTEM.Programmable Products.Omron Companies shall not be responsible for the user’s programming of a programmable Product, or any consequence thereof.Performance Data.Data presented in Omron Company websites, catalogs and other materials is provided as a guide for the user in determining suitability and does not constitute a warranty. It may represent the result of Omron’s test conditions, and the user must correlate it to actual application requirements. Actual performance is subject to the Omron’s Warranty and Limitations of Liability.Change in Specifications.Product specifications and accessories may be changed at any time based on improvements and other reasons. It is our practiceto change part numbers when published ratings or features are changed, or when significant construction changes are made. However, some specifications of the Product may be changed without any notice. When in doubt, special part numbers may be assigned to fix or establish key specifications for your application. Please consult with your Omron’s representative at any time to confirm actual specifications of purchased Product.Errors and Omissions.Information presented by Omron Companies has been checked and is believed to be accurate; however, no responsibility is assumed for clerical, typographical or proofreading errors or omissions.19• Application examples provided in this document are for reference only. In actual applications, confirm equipment functions and safety before using the product.• Consult your OMRON representative before using the product under conditions which are not described in the manual or applying the product to nuclear control systems, railroad systems, aviation systems, vehicles, combustion systems, medical equipment, amusement machines, safety equipment, and other systems or equipment that may have a serious influence on lives and property if used improperly. Make sure that the ratings and performance characteristics of the product provide a margin of safety for the system or equipment, and be sure to provide the system or equipment with double safety mechanisms.OMRON CorporationElectronic and Mechanical Components CompanyRegional ContactCat. No. A274-E1-020519(0318)Americas Europehttps:/// http://components.omron.eu/ Asia-Paci ic China https://.sg/ https:///Korea Japanhttps://www.omron-ecb.co.kr/ https://www.omron.co.jp/ecb/In the interest of product improvement, specifications are subject to change without notice.© OMRON Corporation 2018-2019 All Rights Reserved.。
赣州芯讯电子科技有限公司MEMS可燃气传感器说明书
MEMS Combustible Gas Sensor(Model No.:GM-402B)ManualVersion: 1.1Valid from: 2017-05-10Zhengzhou Winsen Electronics Technology Co., LtdStatementThis manual copyright belongs to Zhengzhou Winsen Electronics Technology Co., LTD. Without the written permission, any part of this manual shall not be copied, translated, stored in database or retrieval system, also can’t spread through electronic, copying, record ways.Thanks for purchasing our product. In order to let customers use it better and reduce the faults caused by misuse, please read the manual carefully and operate it correctly in accordance with the instructions. If users disobey the terms or remove, disassemble, change the components inside of the sensor, we shall not be responsible for the loss.The specific such as color, appearance, sizes &etc, please in kind prevail.We are devoting ourselves to products development and technical innovation, so we reserve the right to improve the products without notice. Please confirm it is the valid version before using this manual. At the same time, users’ comments on optimized using way are welcome.Please keep the manual properly, in order to get help if you have questions during the usage in the future.Zhengzhou Winsen Electronics Technology CO., LTDGM-402B MEMS Combustible Gas SensorProduct descriptionMEMS combustible gas sensor is using MEMSmicro-fabrication hot plate on a Si substrate base,gas-sensitive materials used in the clean air with lowconductivity metal oxide semiconductor material. When thesensor exposed to gas atmosphere, the conductivity ischanging as the detected gas concentration in the air. Thehigher the concentration of the gas, the higher theconductivity. Use simple circuit can convert the change ofconductivity of the gas concentration corresponding to theoutput signal.CharacterMEMS technology, Strong constructionHigh sensitivity to combustible gasesSmall sizes and low power consumptionFast response and resumeSimple drive circuit, Long lifespanApplicationGas leak detection for mobile phones, computers and other consumer electronics applications; also apply for home, commercial use of the combustible gas leakage monitoring devices, gas leak detectors, fire / security detection system.Parameters Stable1.Part No. GM-402BSensor Type MEMSStandard Encapsulation CeramicDetection Gas CH4, C3H8 &etc.Detection Range 1~10000ppm (C3H8)Standard Circuit ConditionsLoop Voltage V C≤24V DC Heater Voltage V H 2.8V±0.1V AC or DC Load Resistance R L AdjustableSensor character under standard testconditionsHeater Resistance R H 80Ω±20Ω(room temperature)Heater consumption P H ≤80mW sensitive materials resistance R S1KΩ~30KΩ(in 5000ppm CH4) Sensitivity S R0(in air)/Rs(in 5000ppmCH4)≥2 Concentration Slope α≤0.9(R5000ppm/R1000ppmCH4)Standard test conditionsTemp. Humidity 20℃±2℃;55%±5%RH Standard test circuit V H:2.8V±0.1V;V C :5.0V±0.1VSensor Structure DiagramPins Connection①R H1②③R H2④⑤R S1⑥⑦R S2⑧Fig1.Sensor structureBasic Circuit①Heating 1⑦Measure 1③Heating 2⑤Measure 2Fig2. GM-402B test circuitInstructions: The above fig is the basic test circuit of GM-402B.The sensor requires two voltage inputs: heater voltage (V H) and circuit voltage (V C). V H is used to supply specific working temperature to the sensor and it can adopt DC or AC power. V out is the voltage of load resistance R L which is in series with sensor. Vc supplies thedetect voltage to load resistance R L and it should adopt DC power.Sensor ’s Characteristics:Fig3.Typical Sensitivity Curve Rs means resistance in target gas with different concentration, R 0 means resistance of sensor in clean air. All tests are finished under standard test conditions. Fig4.Typical temperature/humidity characteristicsRs means resistance of sensor in 5000ppm methane (CH 4) under different temp. and humidity. Rso means resistance of the sensor in 5000ppm methane under 20℃/55%RH.Fig6. Linearity characterThe output in above Fig is the voltage of RL which is in series with sensor. All tests are finished under standard test conditions.Fig5.Responce and ResumeThe output in above Fig is the voltage of RL which is in series with sensor. All tests are finished under standard test conditions and the test gas is 5000ppm CH4.airgas concentration(ppm)Temperature(℃)Voltage output(V)gas concentration(ppm)Time(s)Long-term stability:Voltage output(V)Preheating time(days)Fig7.long-term StabilityTest is finished in standard test conditions, the abscissa is observing time and the ordinate is voltage output of RL. Instructions:1. Preheating timeSensor’s resistance may drift reversibly after long-term storage without power. It need to preheat the sensor to reach inside chemical equilibrium. Preheating voltage is same with heating voltage V H. The suggested preheating time as follow:Storage Time Suggested aging timeLess than one month No less than 48 hours1 ~ 6 months No less than 72 hoursMore than six months No less than 168 hours2. CalibrationSensor’s accuracy is effected by many factors such as reference resistance’s difference, the sensitivity difference, temperature, humidity, interfering gases, preheating time, the relationship between input and output is not linear,hysteretic and non-repetitive. For absolute concentration measurement, they need regular calibration (one-point calibration / multi-points calibration for full scale) to ensure that the measuring value is accurate. For relative measurement calibration is not required.Cautions1 .Following conditions must be prohibited1.1 Exposed to organic silicon steamSensing material will lose sensitivity and never recover if the sensor absorbs organic silicon steam. Sensors must be avoid exposing to silicon bond, fixature, silicon latex, putty or plastic contain silicon environment. 1.2 High Corrosive gasIf the sensors are exposed to high concentration corrosive gas (such as H2S, SOX, Cl2, HCL etc.), it will notonly result in corrosion of sensors structure, also it cause sincere sensitivity attenuation.1.3 Alkali, Alkali metals salt, halogen pollutionThe sensors performance will be changed badly if sensors be sprayed polluted by alkali metals salt especially brine, or be exposed to halogen such as fluorine.1.4 Touch waterSensitivity of the sensors will be reduced when spattered or dipped in water.1.5 FreezingDo avoid icing on sensor’s surface, otherwise sensing material will be broken and lost sensitivity.1.6 Applied voltageApplied voltage on sensor should not be higher than 120mW, it will cause irreversible heater damaged, also hurt from static, so anti-static precautions should be taken when touching sensors.2 .Following conditions must be avoided2.1 Water CondensationIndoor conditions, slight water condensation will influence sensors’ performance lightly. However, if water condensation on sensors surface and keep a certain period, sensors’ sensitive will be decreased.2.2 Used in high gas concentrationNo matter the sensor is electrified or not, if it is placed in high gas concentration for long time, sensors characteristic will be affected. If lighter gas sprays the sensor, it will cause extremely damage.2.3 Long time exposed to extreme environmentNo matter the sensors electrified or not, if exposed to adverse environment for long time, such as high humidity, high temperature, or high pollution etc., it will influence the sensors’ performance badly.2.4 VibrationContinual vibration will result in sensors down-lead response then break. In transportation or assembling line, pneumatic screwdriver/ultrasonic welding machine can lead this vibration.2.5 ConcussionIf sensors meet strong concussion, it may lead its lead wire disconnected.2.6 SolderingSoldering flux: Rosin soldering flux contains least chlorine and safeguard procedures.If disobey the above using terms, sensors sensitivity will be reduced.Zhengzhou Winsen Electronics TechnologyCo., LtdAdd: No.299, Jinsuo Road, National Hi-TechZone, Zhengzhou 450001 ChinaTel: +86-371-67169097/67169670Fax: +86-371-60932988E-mail:*******************Website: 。
F1-(A)HDMO -D100R26 -5P 数字MEMS微声波传感器说明书
F1-(A)HDMO-D100R26-5P F1-(A)HDMO-D100R26-5PHigh SNR / Multiple Clock Mode/ Small MiniOMNI-DIRECTIONALBottom PORT1. INTRODUCTION• Digital MEMS Microphone - ½ Cycle PDM 16bit, Full Scale=120dBSPL• Bottom Port Type - Sensitivity is Typical -26dBFS• High Signal to Noise Ratio(SNR) – Typical 64.5dB (A-weighted, 20㎐~20㎑) at Standard Mode • Multiple Clock Mode – Stand by Mode, Low-Power Mode(LPM), Standard Mode(STM)• Omni-directional• Dual Channel supported• RF Shielded - with embedded Ground• Compatible with Sn/Pb and Halogen-free solder process• RoHS compliant• SMD reflow temperature of up to 260℃ for over 30 seconds2. APPLICATIONS• Smartphones• Ear-sets, Bluetooth Headsets• Smart Speaker, Set Top Box• Tablet Computers• Wearable Devices• Electrical Appliances• Voice Recognition Systems of Appliances3. MODEL NO.F1-(A)HDMO-D100R26-5PParameterConditions MinTypMaxUnits ClockFrequency RangeSleep Mode0 - 100 ㎑ Low-Power Mode 700 768 1200 ㎑ Standard Mode2.02.4 4.0 ㎒3.072 Sleep Mode Current f CLK < 100㎑-420㎂Short Circuit Current Grounded DATA pin1 - 20 ㎃ Output Load -- 140 ㎊ Fall-asleep Time f CLK < 100㎑ - - 10 ㎳ Wake-up Time f CLK > 351㎑- - 20 ㎳ Power-up Time V DD > V(min)- - 50 ㎳ Mode-Change Time--10㎳4. ABSOLUTE MAXIMUM RATINGSCaution : Stresses above those listed n “Absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only. Functional operation at these or any other conditions beyond those indicated under “ELECTRO -ACOUSTIC CHARACTERISTICS” is not implied. Exposure beyond those indicated under “ELECTRO -ACOUSTIC CHARACTERISTICS” for extended periods may affect device reliability.ParameterAbsolute maximum ratingUnitsVdd , Data to Ground -0.3 to +3.6 V Clock to Ground -0.3, Vdd+0.3 V Select to Ground -0.3, Vdd+0.3V Input Current2 mA Short Circuit Current to/from Datanasec5. GENERAL MICROPHONE SPECIFICATIONSTest Condition : 23 ± 2℃, Room Humidity = 55 ± 20 %, VDD=1.8V, fclk = 2.4㎒, SELECT Pin is grounded, CLOAD = 1㎌, unless otherwise noticed* Note : Must be consulted when used another clock frequency without the typical clock frequencys.6. ELECTRO-ACOUSTIC CHARACTERISTICSTest Condition : 23 ± 2℃, Room Humidity = 55 ± 20 %, VDD=1.8V, fclk = 2.4㎒, SELECT Pin is grounded,C LOAD = 1㎌, unless otherwise noticed.Parameter Conditions Min Typ Max Units Directivity Omni-directionalSupply Voltage 1.64 - 3.6 V Data Format ½ Cycle PDM 16bit - Full Scale Acoustic Level 120 dBSPLCurrent consumption fclk = 2.4㎒, load on DATA output 530 - 730㎂fclk = 3.072㎒, load on DATA output 590 - 790● Standard Mode [STM]Test Conditions : Measurement Clock Frequency=2.40 MHz , Vdd=1.8VSensitivity 94dB SPL at 1kHz -29 -26 -23 dBFS Signal to Noise Ratio(SNR)94dBSPL at 1kHz, A-weighted (20㎐~20㎑) - 64.5 - dB(A) Equivalent Input Noise (EIN) 94dBSPL at 1kHz, A-weighted (20㎐~20㎑) - 29.5 - dB(A)SPLTotal Harmonic Distortion (THD) 94dBSPL at 1㎑- 0.15 0.3% 111dBSPL at 1㎑- - 1.0118dBSPL at 1㎑- - 3.0119dBSPL at 1㎑- - 5.0Acoustic Overload Point(AOP)THD>10%, at 1㎑121 - - dBSPLPower Supply Rejection Raito (PSRR) Measured with 1㎑ sine wave andbroad band noise, both 200mVpp- 55 - dBV/FSPower Supply Rejection (PSR) Measured with 217㎐ square wave andbroad band noise, both 100mVpp,A-weighted- -88 - dBFS(A)● Low Power Mode [LPM]Test Conditions : Measurement Clock Frequency=768 kHz , Vdd=1.8VCurrent consumption Normal operation 200 - 380 ㎂Sensitivity 94dB SPL at 1kHz -29 -26 -23 dBFS Signal to Noise Ratio(SNR)94dBSPL at 1kHz, A-weighted (20㎐~8㎑) - 61.6 - dB(A) Equivalent Input Noise (EIN) 94dBSPL at 1kHz, A-weighted (20㎐~8㎑) - 32.4 - dB(A)SPLTotal Harmonic Distortion (THD) 94dBSPL at 1㎑- 0.2 0.3% 110dBSPL at 1㎑- - 1.0117dBSPL at 1㎑- - 3.0119dBSPL at 1㎑- - 5.0Acoustic Overload Point(AOP_THD>10%, at 1㎑121 - - dBSPLPower Supply Rejection Raito (PSRR) Measured with 1㎑ sine wave andbroad band noise, both 200mVpp- 67 - dBV/FSPower Supply Rejection (PSR) Measured with 217㎐ square wave andbroad band noise, both 100mVpp,A-weighted- -98 - dBFS(A)7. INTERFACE PARAMETERParameter Conditions Min Typ Max UnitsClock Frequency 0.7 - 1.2㎒2.0 - 4.0Stand by Clock Frequency - - 100 ㎑Clock Duty Cycle f CLK≤ 2.4㎒40 - 60 %2.4㎒<f CLK - 50 - %Clock Input Impedance 1000 - - ㏁LR Input Impedance 1000 - - ㏁Input Logic Low Level -0.3 - 0.3 x V DD V Input Logic High Level 0.7 x V DD- V DD + 0.3 V Output Logic Low Level -0.3 - 0.3 x V DD V Output Logic High Level 0.7 x V DD- V DD + 0.3 V Clock Rise / Fall Time - - 10 ㎱Delay Time for Data driven 18 55 - ㎱Delay Time for Valid Data R load, min = 100㏀C load, max = 200㎊VDD = 1.64 to 3.6V- - 100 ㎱Delay Time for High Z 0 5 10 ㎱8. MEASUREMENT CIRCUIT9. PIN DESCRIPTIONPin NameDescriptionVDD Supply and IO voltage for the microphone L/R Select Left/Right ( DATA2 / DATA1 ) Channel selection CLOCK Clock input to the microphone DATAPDM data output from the microphoneGND Ground10. INTERFACE CIRCUIT & CHANNEL DATA CONFIGURATIONMIC 1CODECClock OutputData Input ClockDataMIC 2ClockData L/R Select GND VDD1.64V to 3.6VGND1㎌L/R Select 1㎌VDD 1.64V to 3.6VR1 R1R2Data symbol in interfacetiming chart L/R Select connected toData asserted at Data sampled at DATA1 [MIC1(Low)] GND Falling clock edge Rising clock edge DATA2 [MIC2(High)]V DDRising clock edgeFalling clock edgeNote 1 : Stereo operation is accomplished by connecting the L/R Sel. pin either to VDD or GND on the phone PWB. Bypass Capacitors near each MIC. on VDD are recommended to provide maximum SNR performance. Note 2 : R1(Data source termination Resister) should be as close as possible to each the MIC. (50Ω~100Ω) Note 3 : R2(Clock source termination Resister) should be as close as possible to the CODEC. (50Ω~100Ω)11. INTERFACE TIMING CHARTWith defining a minimum value for t DD and a maximum value for t HZ it is securedthat the driven DATA signals of the right and the left channel don’t overlap.A definition of a maximum value for t DD is not necessary, instead t DV defines thetime until the driven DATA is valid.12. ENVIRONMENTAL CHARACTERISTICS AND STANDARD CONDITIONSItem Min Typ Max Unit Operating temperature range -40 - +100 ℃Storage temperature range -40 - +100 ℃Relative humidity 25 - 85 % Air Pressure 860 - 1060 mBar Standard temperature range 15 20 25 ℃Standard Relative humidity 40 - 60 %Figure 3. Typical IDD vs Clock Frequency, All Mode13. TYPICAL FREQUENCY RESPONSE CURVEFar Field Measurement Condition Temperature : 23 ± 2 ℃ Supply Voltage : 1.8V Clock Frequency : 2.4㎒Acoustic stimulus : 1Pa ( 94㏈ SPL at 1㎑ ) at 50 ㎝ from the loud-speaker.The loud-speaker must be calibrated to make a flat frequency response input signal. Position : The frequency response of microphone unit measured at 50㎝ from the loud-speakerFigure 2. THD vs. Input Level, Standard and Low-Power ModesFigure 4. Typical Power Supply Rejection (PSR) vs. Frequency,Standard and Low-Power ModesFigure 1. Typical Frequency Response, Normalized to 1㎑■ Frequency Mask SpecificationFrequency [Hz]Lower Limit [dBr]Upper Limit [dBr]Note50 -6 +2 0dBr = dBFS at 1㎑150 ~ 1000 -2 +2 1000 0 0 1000 ~ 3400 -2 +2 12000 -2 +7 15000-2+12Note : Band Frequency Range1. Narrow Band : 300㎐ ~ 3.4㎑2. Wide Band : 100㎐ ~ 7㎑3. Super Wide Band : 50㎐ ~ 14㎑F1-(A)HDMO-D100R26-5PSMD Type※ PCB design & Pin size can be changed by model No.LetteringV1.0 F1M 16 26VersionWeek YearE : Engineering Sample P : Pre-Production M : Mass Production4.00±0.13.00±0.11.00±0.1Pin # Pin Name Type Description 1 VDD Power Supply and I/O voltage 2 L/R L/R Select Left/Right channel selection3 CLK Clock Clock input4 DATA Digital O PDM data output5GNDGroundGroundItemDimensionTolerance (+/-)Units Length (L) 4.00 0.10 mm Width (W) 3.00 0.10 mm Height (H)1.000.10mmAcoustic Port (AP) Φ 0.25 0.10 mm- Mechanical dimensions & Pad Lay-outDimensions (Unit : mm)TOP VIEWSIDE VIEWBOTTOM VIEWNote : All ground Pins must be connected to ground.“5”Pin must be sealed by solder paste on the PWB. General Tolerance ±0.08mm.14. MECHANICAL CHARACTERISTICS - Recommended Land Pattern & Stencil PatternRecommendedPCB land pattern(Unit : mm)Recommendedsolder stencil pattern(Unit : mm)( thickness of metal mask: 0.10T)(Unit : mm)• 13” reel will be provided for the mass production stage- Reel[ Note ]1. Reel ESD : 102~1010ΩWIDTHAN W1 W2 W3 C12mm 330 ±2.080 +3.0-1.012.4 +3.0-0.016.4 ±2.0 13.6 ±2.0 13 +0.5-0.2- TapingUnit : mmA0 4.30±0.10 E 1.75±0.10 B0 3.20±0.10 F 5.50±0.05 K0 1.30±0.10 T 0.30±0.05 D01.50±0.10W12.00±0.30Sound HolePin 1 9.3Cover Tape[ Note ]1. Direction of parts : See above pictures.2. Microphone total quantity (13” Reel) : 4,000pcs3. Carrier Tape ESD : 102~1010Ω4. Carrier Tape Material & Color : PS, Black5. Cover Tape Inside ESD : 102~1010Ω6. Thermo Compression BondingInner Box spec.Outer Box Spec. 1 Inner Box included 2 reels→ Microphone total quantity : 8,000 pcs 1 Outer Box included 5 Inner Boxes→ Microphone total quantity : 40,000 pcs - Packing16. RELIABILITY TEST CONDITIONSNote : After test conditions are performed, the sensitivity of the microphone shall not deviate more than ±3dB from its initial value.TEST DESCRIPTIONTEMPERATURE STORAGE [High Temperature Storage]+80℃±3℃ x 200hrs(The measurement to be done after 2 hours of conditioning at room temperature) [Low Temperature Storage]-30℃±3℃ x 200hrs(The measurement to be done after 2 hours of conditioning at room temperature)TEMPERATURECYCLE (-25℃±2℃ x 30min -> +20℃±2℃ x 10min -> +70℃±2℃ x 30min ->+20℃±2℃ x 10min) x 5cycles(The measurement to be done after 2 hours of conditioning at room temperature)THERMAL SHOCK (+85℃±2℃ -> -40℃±2℃Change time : 20sec) x 96cycles Maintain : 30min(The measurement to be done after 2 hours of conditioning at room temperature)HIGH TEMPERATURE AND HUMIDITY +85℃±2, 85±%RH, Bias(3.6V) x 200hrs(The measurement to be done after 2 hours of conditioning at room temperature)+70℃±2, 95±%RH x 200hrs(The measurement to be done after 2 hours of conditioning at room temperature)ESD (Electrostatic Discharge) Air discharge : ±8kV, ±10kV, ±12kV, ±15kVVdd, Data, CLK, L/R, GND Pad each 5 times (Non-ground)Contact discharge : ±2kV, ±4kV, ±6kV, ±8kVVdd, Data, CLK, L/R, GND Pad each 5 times (Non-ground)VIBRATION Signal 5Hz to 500Hz, acceleration spectral density of 0.01g²/Hz in each of 3 axes, 120 min in each axis (360min in total)DROP To be no interference in operation after dropped to steel floor18 times from 1.52 meter height in state of packingREFLOWSENSITIVITY 5 reflow cycles. Refer to reflow profile from specification item 18.17.1 Measurement Condition(a) Supply voltage : 1.8V(b) Clock Frequency : 768㎑, 2.4 ㎒ (c) Acoustic stimulus : 94㏈ SPL at 1㎑ (d) Distance between MIC & SPK : 50㎝(e) Measurement frequency : 50 (㎐) ∼ 20 (㎑)17. MEASUREMENT SYSTEMMachineModel NoPurposeStandard MIC 4191 Revision of input signal & SPK spec Audio Analyzer APX525 Audio Analysis (include Power Supply) Loud-speaker GRF Memory HESPK (Input sound Signal occur) Power Amplifier2716C Power amplificationCharging Conditioning Amplifier 2690 Ref. MIC Signal Transformation Operating Software APx500 3.4.4A-D Freq. Resp.Sound Level Calibrator4231Standard MIC Calibration purposeLoud Speaker (Input S.P.L : 94dB)Anechoic ChamberMicrophone50㎝Line DriverRef. MIC.Amplifier Type 2690Audio PrecisionAPx500System ProgramTurn-Table Controller Power Amplifier Type 2716C Audio Analyzer Type APx52518. SOLDER REFLOW PROFILE[Notes]1. Solder Reflow Profile based on IPC/JDEC J-STD-020 Revision D.2. Do not pull a vacuum over the port hole of the microphone. Pulling a vacuum over the port hole can damage the device.3. Do not board wash after the reflow process. Board washing and cleaning agents can damage the device. Do not expose to ultrasonic processing or cleaning.4. Recommend no more than 5 cycles.5. Shelf life : Twelve(12) months when devices are to be stored in factory supplied, unopened ESD moisture sensitive bag under maximum environmental condition of 30℃, 70% R.H.6. Exposure : Devices should not be exposed to high humidity, high temperature environment. MSL (Moisture sensitivity level) Class 1.7. Out of bag : Maximum of 90 days of ESD moisture sensitive bag, assuming maximum conditions of 30℃, 70% R.H.Critical Zone T L to Tptpt Lt 25℃ to Peakts PreheatTsmaxTsminProfile FeaturePb-Free AssemblyPreheat/SoakTemperature Min (Tsmin) Temperature Min (Tsmax)Time(ts) from (Tsmin to Tsmax) 150℃ 200℃60 ~ 120 seconds Ramp-up rate (T L to Tp) 3℃/second max. Liquidous temperature(T L ) Time(t L ) maintained above T L 217℃60 ~ 150 secondsPeak package body temperature (Tp)260℃ Time(tp) within 5℃ of the specified classification Temperature(Tc) 20 ~ 40 seconds Ramp-down rate (Tp to T L ) 6℃/second max. Time 25℃ to peak temperature8 minutes max.V2.0 19. RECOMMENDED PICK-UP NOZZLE CONDITIONS19.1. Nozzle material : Metal or Rubber, Etc.19.2. Case Weight- If tool outer size is bigger than MIC. : Max. 10N- If tool outer size is smaller than MIC. : Max. 4N19.3. Nozzle position : The opposite side of sound hole- Nozzle inner diameter size : Max. Ø2.0- position : the MIC center20. APPLICATION EXAMPLEKey PadCoverVoicedust coverMain boardMicrophoneGasketMicrophoneMain boardGasketVoiceVoiceCompression force for sealingAdhesive tapNITTO No.5919M (0.05T) (or similar)Mesh (Dust cloth)NITTOKU NT270T (0.06T) (or Tradex PES 38/31 or similar)Adhesive tapNITTO No.5000NS (0.06T) (or similar)GasketNITTO 100(0.9T) (or Rogers PORON 92-12039 P (1.0T) or similar)Gasket compression range for sealing0.5±0.2mmGasket LayersSound Path Size at Cover or Gasket : Min Φ1.00㎜21. HANDLING GUIDE21.1. Handling Guide of Cleaning & Foreign Matter* Note 1. No Liquid or/and gas should be used for washing / cleaning.* Note 2. No board washes should be applied after reflow* Note 3. No foreign matter should be exposed interior microphone during cleaning or washing.if cleaning or washing is applied unavoidably, It must do additional prevention in area of “Microphone sound hole” to avoid foreign matter.(ex. Attached protective tape)* Note 4. No seal sound hole of microphone should be applied during reflow process* Note 5. No ultrasonic cleaning should be applied in case of microphone unit itself or/and afterinstalled microphone onto board.* Note 6. Do not reuse microphone which is defect during SMD.Do not wash or clean to reuse microphone which is defect during SMD.De-cap View ofGood part► Example) De-cap View of the NG MicrophoneReflow after sealing of Sound Hole Defect view NG MIC by Pick-up Defect view NG MIC by ultrasonic cleaning Defect view NG MIC by liquid foreign matter21.2. Handling Guide of Care of Board Routing & Cutting* Note 1. Do work maximum distance with microphone and minimum speed machining setting during Board Routing & Cutting* Note 2. Do not wash or clean “Board” after Board Routing & Cutting* Note 3. Do additional prevention in area of “microphone sound hole” to avoid foreignmatter(ex. Attached protective tape) during Board Routing & Cutting* Note 4. Do not use strong air flow directly in order to remove foreign matter should be applied in microphone* Note 5. Do preventive action in area of “microphone sound hole” to avoid foreignmatter(ex. Attached protective tape) or air .(ex. Block “Microphone sound hole” by hands as below picture)► Example) Air Blowing ConditionN.GExample) Do block “Microphone Sound Hole”by hands during air blow21.3. Broken Membrane & Back Plate of MEMS DIE* Note 1. Do not touch Sound Hole by Sharp Tools. (ex. Tweezers)* Note 2. Do not rub Sound Hole by Swab. (ex. Cloth)Sound HoleAwl Knife Swab Tweezers21.4. PRECAUTION for ESD* Note 1. Wrist strapsSince the main cause of static is people, wrist-straps is very important to reduce theESD damage. A wrist-strap, when properly grounded, keeps a person wearing it near ground potential and static charges do not accumulate. Wrist-straps should be wornby all personnel in all ESD protection areas, that is where ESD susceptible devicesand end products containing them are assembled, manufactured handled andpackaged.Further ESD protection, similar to wrist-strap, involves the use of ESD protection floors in conjunction with ESD control footwear or foot-straps. Static control garments (smocks) give additional protection.* Note 2. Work AreasIt is recommended that all areas where components that are not in ESD protectivepackaging are handled should be designated as ESD protective areas. Ground matsof ESD safe table surfaces is needed. These should be connected to the local ground with a 1 Mega-ohm series resistor. ESD safe floor and shoes are also needed.* Note 3. IonizersIn situations where we have to deal with isolated conductors that cannot be grounded and with most common plastics, air ionization can neutralize the static charge because only air is required for ionization to be effective, air ionizers can and should be usedwherever it is not possible to ground everything.21.5. Inspection by X-Ray* Note 1. Do inspect X-Ray after SMD.It is different X-Ray condition by applied SMD company.22.1. Recommended Heater Gun Specification1.5cmHeater gun nozzleMICPCB22.2. Recommended Heater Gun Setting Condition* Note 2. According to Rework M/C & Worker, this condition will be change.* Note 1. According to the material & thickness & counts of layer for PCB, this condition will be change.Manufacturer HAKKO Model 850B ESD Temperature control100 ~ 420 Top heaterTypeHot air flowFlow rate< 23 ℓ/min Alignment visual Pick-up ManualSolder/flux1. Removing or pre-heating the solder residue before mounting new part2. Apply lead-free flux only or apply 2 ~ 3 points of solder paste insteadHeater gun setting Temperature300 ℃ ~ 400 ℃Nozzle & MIC. Length1.5 cm Flow setting2.0 ~Alignment Visual Pick-upManual Working TimeRemove10 ~ 20 sec SMD10 ~ 20 sec22.3. Rework Process Condition (using Heater Gun) Bottom Heater Recommend IR heater.Alignment Use magnifier for alignment.Note : it may difficult to do alignment by naked visual because MIC pad is located on soffit.Temperature Recommend temperature is “300℃”.Time It is the optimized working process of 1.0 ~ 2.0mm board for 10~20sec under 300℃ temp.Nozzle Use heater gun without nozzleSolder/flux Process Options 1. Removing the solder residue before mounting new part- print Halogen-free solder paste on the SMD MICterminals using mask mounting2-1. Pre-heating the solder residue before mounting new part - apply Halogen-free flux onto the land pattern2-2. Pre-heating the solder residue before mounting new part - apply 2 ~ 3 points of Halogen-free solder paste onto theland pattern3. Highly recommendation process for rework.- After remove defect parts without Pre-heating,It is used Halogen-free flux or 2~3 points of Halogen-free solder. (It is most effective and fast for rework)22.4. Handling of Rework* Note 1. Follow standard guide line of SMD company for Rework Condition* Note 2. Rework conditions may variable by SMD companies' circumstance and working condition.* Note 3. Do Not reuse defect microphone by SMD process.* Note 4. Do not employ chemical board wash or cleaning, as the associated cleaning agents (such as liquid or air) can damage the device.193, Namdongseo-ro, Namdong-gu, Incheon, South KoreaSPECIFICATION HISTORYAddressContactTEL : +82-32-500-1700~7 FAX : +82-32-554-6205~6VersionDateComments1.0 Nov. 01. 17 1st Submission of Electro-Acoustical specification2.0Apr. 01. 18Updated INTERFACE CIRCUIT & CHANNEL DATA CONFIGURATION。
YX-AS 系列mems振动加速度传感器 产品说明书
产品使用手册1.产品名称YX-AS系列MEMS振动加速度传感器2.基本工作原理简述本产品采用单晶硅构成质量-弹簧-阻尼系统,差分电容方式检测中心质量块与固定框架的相对位移,而该相对位移与外界输入加速度具有确定的比例关系。
3.产品结构及特点本产品是由加速度表头、调理电路和金属外壳等部分组成。
加速度表头采用硅微机械加工制造,差分电容敏感结构,采用陶瓷管壳充氮封装,表贴形式焊接在印制电路板上;调理电路由集成电路和外围电阻、电容等电子器件构成,全部采用表面贴装方式焊接在印制电路板上;传感器使用表面阳极氧化发黑的铝合金外壳,内部组件采用环氧灌封,通过电缆与外界连接,输出测试信号,引入工作电源。
4.质量等级及执行标准产品质量等级为普通军品B1级Q/HDYXW30001-2006 MEMS振动加速度传感器详细规范5.产品用途MEMS微硅加速度振动传感器具有量程大、抗冲击振动能力强的优点。
广泛应用于地面振动传感与探测;导弹、飞机、舰船、潜艇在航行中,由于发动机、气流和波浪扰动所造成的振动;地面车辆在凹凸不平的路面上行驶所引起的振动;旋转机械由于质量失衡在运行中的振动等等。
6.产品照片7.基本参数表1型号YX-AS-005 YX-AS-010 YX-AS-025 YX-AS-050 YX-AS-100 YX-AS-200 YX-AS-400 单位输入范围±5 ±10 ±25 ±50 ±100 ±200 ±400 g频响范围0~400 0~600 0~1000 0~1500 0~2000 0~3000 0~3500 Hz灵敏度800 400 160 80 40 20 10 mV/g输出噪声32 64 158 316 632 1264 2530 ug/(root Hz)机械冲击2000g,半正弦波,0.1ms g8.其他特性参数最小典型最大单位横向灵敏度比 2 3 %-005 2 4 % of span零点-025~-400 1 2 % of span零点漂移 1 % of span灵敏度漂移 2 % of span 零点温度漂移-005 100 300ppm of span/℃(-40℃~85℃)-025~-400 50 200灵敏度温度漂移2000 ppm/℃(-40℃~85℃)非线性 1 % of span电源电压 6 15 Vdc电源电压抑制比25 dB输出阻抗 2 Ω 工作电流5 7mA 绝缘电阻≥100M Ω9.应用环境条件工作温度范围:-40℃~85℃; 贮存温度范围:-55℃~125℃; 工作电压范围:6VDC ~15VDC 。
MEMS Handbook-_PDF_C01(MEMS手册)
IBackground and Fundamentals1 Introduction Mohamed Gad-el-Hak2 Scaling of Micromechanical Devices William Trimmer, Robert H. Stroud Introduction •The Log Plot •Scaling of Mechanical Systems3 Mechanical Properties of MEMS Materials William N. Sharpe, Jr.Introduction •Mechanical Property Definitions •Test Methods •Mechanical Properties •Initial Design Values 4 Flow Physics Mohamed Gad-el-Hak Introduction •Flow Physics •Fluid Modeling •ContinuumModel •Compressibility •Boundary Conditions •Molecular-BasedModels •Liquid Flows •Surface Phenomena •Parting Remarks5 Integrated Simulation for MEMS: Coupling Flow-Structure-Thermal-Electrical Domains Robert M. Kirby, George Em Karniadakis, Oleg Mikulchenko, Kartikeya Mayaram Abstract •Introduction •Coupled Circuit-Device Simulation •Overview ofSimulators •Circuit-Microfluidic Device Simulation •Demonstrations of the IntegratedSimulation Approach •Summary and Discussion6 Liquid Flows in Microchannels Kendra V . Sharp, Ronald J. Adrian, Juan G. Santiago, Joshua I. Molho Introduction •Experimental Studies of Flow Through Microchannels •ElectrokineticsBackground •Summary and Conclusions7 Burnett Simulations of Flows in Microdevices Ramesh K. Agarwal,Keon-Young Yun Abstract •Introduction •History of Burnett Equations •Governing Equations •Wall-Boundary Conditions •Linearized Stability Analysis of Burnett Equations •Numerical Method •Numerical Simulations •Conclusions8 Molecular-Based Microfluidic Simulation Models Ali BeskokAbstract •Introduction •Gas Flows •Liquid and Dense Gas Flows •Summary andConclusions9 Lubrication in MEMS Kenneth S. BreuerIntroduction•Fundamental Scaling Issues•Governing Equations forLubrication•Couette-Flow Damping•Squeeze-Film Damping•Lubricationin Rotating Devices•Constraints on MEMS Bearing Geometries•ThrustBearings•Journal Bearings•Fabrication Issues•Tribologyand Wear•Conclusions10 Physics of Thin Liquid Films Alexander OronIntroduction•The Evolution Equation for a Liquid Film on a Solid Surface•Isothermal Films•Thermal Effects•Change of Phase: Evaporationand Condensation•Closing Remarks11 Bubble/Drop Transport in Microchannels Hsueh-Chia ChangIntroduction•Fundamentals•The Bretherton Problem for Pressure-DrivenBubble/Drop Transport•Bubble Transport by Electrokinetic Flow•FutureDirections12 Fundamentals of Control Theory Bill GoodwineIntroduction•Classical Linear Control•“Modern” Control•NonlinearControl•Parting Remarks13 Model-Based Flow Control for Distributed Architectures Thomas R. BewleyIntroduction•Linearization: Life in a Small Neighborhood•Linear Stabilization: Leveraging Modern Linear Control Theory•Decentralization: Designing for Massive Arrays•Localization: Relaxing Nonphysical Assumptions•Compensator Reduction: Eliminating Unnecessary Complexity•Extrapolation: Linear Control of Nonlinear Systems•Generalization: Extending to Spatially Developing Flows•NonlinearOptimization: Local Solutions for Full Navier–Stokes•Robustification: Appealing to Murphy’s Law•Unification: Synthesizing a General Framework•Decomposition: Simulation-Based System Modeling•Global Stabilization: Conservatively Enhancing Stability•Adaptation: Accounting for a Changing Environment•PerformanceLimitation: Identifying Ideal Control Targets•Implementation: EvaluatingEngineering Trade-Offs•Discussion: A Common Language for Dialog•The Future: A Renaissance14 Soft Computing in Control Mihir Sen, Bill GoodwineIntroduction•Artificial Neural Networks•Genetic Algorithms•Fuzzy Logicand Fuzzy Control•Conclusions1IntroductionHow many times when you are working on something frustratingly tiny, like your wife’s wrist watch, have you said to yourself, “If I could only train an ant to do this!” What I would like to suggest is the possibility of training an ant to train a mite to do this. What are the possibilities of small but movable machines?They may or may not be useful, but they surely would be fun to make.(From the talk “There’s Plenty of Room at the Bottom,” delivered by Richard P . Feynman at the annual meeting of the American Physical Society, Pasadena, CA, December 29, 1959.)Tool making has always differentiated our species from all others on Earth. Aerodynamically correct wooden spears were carved by archaic Homo sapiens close to 400,000 years ago. Man builds things consistent with his size, typically in the range of two orders of magnitude larger or smaller than himself,as indicated in Figure 1.1. Though the extremes of the length scale are outside the range of this figure,man, at slightly more than 100 m, amazingly fits right in the middle of the smallest subatomic particle,which is approximately 10−26 m, and the extent of the observable universe, which is of the order of 1026 m (15 billion light years)—neither geocentric nor heliocentric but rather an egocentric universe! But humans have always striven to explore, build and control the extremes of length and time scales. In the voyages to Lilliput and Brobdingnag of Gulliver’s Travels , Jonathan Swift (1726) speculates on the remark-able possibilities which diminution or magnification of physical dimensions provides.1 The Great Pyramid of Khufu was originally 147 m high when completed around 2600 B .C ., while the Empire State Building constructed in 1931 is currently—after the addition of a television antenna mast in 1950—449 m high.At the other end of the spectrum of man-made artifacts, a dime is slightly less than 2 cm in diameter.Watchmakers have practiced the art of miniaturization since the 13th century. The invention of the microscope in the 17th century opened the way for direct observation of microbes and plant and animal cells. Smaller things were man-made in the latter half of the 20th century. The transistor—invented in 1947—in today’s integrated circuits has a size 2 of 0.18 µm (180 nm) in production and approaches 10 nm in research laboratories using electron beams. But what about the miniaturization of mechanical parts—machines—envisioned by Feynman (1961) in his legendary speech quoted above?1Gulliver’s Travels was originally designed to form part of a satire on the abuse of human learning. At the heart of the story is a radical critique of human nature in which subtle ironic techniques work to part the reader from any comfortable preconceptions and challenge him to rethink from first principles his notions of man.2The smallest feature on a microchip is defined by its smallest linewidth, which in turn is related to the wavelength of light employed in the basic lithographic process used to create the chip.Mohamed Gad-el-HakUniversity of Notre DameManufacturing processes that can create extremely small machines have been developed in recent years [Angell et al., 1983; Gabriel et al., 1988; 1992; O’Connor, 1992; Gravesen et al., 1993; Bryzek et al., 1994; Gabriel, 1995; Ashley, 1996; Ho and Tai, 1996; 1998; Hogan, 1996; Ouellette, 1996; Paula, 1996; Robinson et al., 1996a; 1996b; Madou, 1997; Tien, 1997; Amato, 1998; Busch-Vishniac, 1998; Kovacs, 1998; Knight, 1999; Epstein, 2000; Goldin et al., 2000; O’Connor and Hutchinson, 2000; Chalmers, 2001; Tang and Lee, 2001]. Electrostatic, magnetic, electromagnetic, pneumatic and thermal actuators, motors, valves, gears, cantilevers, diaphragms and tweezers less than 100 µm in size have been fabricated. These have been used as sensors for pressure, temperature, mass flow, velocity, sound and chemical composition; as actuators for linear and angular motions; and as simple components for complex systems such as robots, micro-heat-engines and micro-heat-pumps [Lipkin, 1993; Garcia and Sniegowski, 1993; 1995; Sniegowski and Garcia, 1996; Epstein and Senturia, 1997; Epstein et al., 1997]. Microelectromechanical systems (MEMS) refer to devices that have a characteristic length of less than 1 mm but more than 1 µm, that combine electrical and mechanical components and that are fabricated using integrated circuit batch-processing technologies. The books by Madou (1997) and Kovacs (1998) provide excellent sources for microfabrication technology. Current manufacturing techniques for MEMS include surface silicon micromachining; bulk silicon micromachining; lithography, electrodeposition and plastic molding (or, in its original German, lithographie galvanoformung abformung, LIGA); and elec-trodischarge machining (EDM). As indicated in Figure 1.1, MEMS are more than four orders of magni-tude larger than the diameter of the hydrogen atom, but about four orders of magnitude smaller than the traditional man-made artifacts. Microdevices can have characteristic lengths smaller than the diameter of a human hair. Nanodevices (some say NEMS) further push the envelope of electromechanical min-iaturization [Roco, 2001].The famed physicist Richard P. Feynman delivered a mere two, but profound, lectures3 on electrome-chanical miniaturization: “There’s Plenty of Room at the Bottom,” quoted above, and “Infinitesimal Machinery,” presented at the Jet Propulsion Laboratory on February 23, 1983. He could not see a lot of use for micromachines, lamenting in 1959: “[Small but movable machines] may or may not be useful, but they surely would be fun to make,” and, 24 years later, “There is no use for these machines, so I still don’t understand why I’m fascinated by the question of making small machines with movable and controllable parts.” Despite Feynman’s demurring regarding the usefulness of small machines, MEMS are finding increased applications in a variety of industrial and medical fields, with a potential worldwide market in the billions of dollars ($30 billion by 2004). Accelerometers for automobile airbags, keyless entry systems, dense arrays of micromirrors for high-definition optical displays, scanning electron micro-scope tips to image single atoms, micro-heat-exchangers for cooling of electronic circuits, reactors for separating biological cells, blood analyzers and pressure sensors for catheter tips are but a few in current use. Microducts are used in infrared detectors, diode lasers, miniature gas chromatographs and high-frequency fluidic control systems. Micropumps are used for ink-jet printing, environmental testing and electronic cooling. Potential medical applications for small pumps include controlled delivery and mon-itoring of minute amounts of medication, manufacturing of nanoliters of chemicals and development of an artificial pancreas.This multidisciplinary field has witnessed explosive growth during the last decade. Several new journals are dedicated to the science and technology of MEMS—for example, Journal of Microelectromechanical Systems, Journal of Micromechanics and Microeng ineering and Microscale Thermophysical Eng ineering. Numerous professional meetings are devoted to micromachines—for example, Solid-State Sensor and Actuator Workshop, International Conference on Solid-State Sensors and Actuators (Transducers), Micro Electro Mechanical Systems Workshop, Micro Total Analysis Systems, Eurosensors, etc.This handbook covers several aspects of microelectromechanical systems, or more broadly the art and science of electromechanical miniaturization. MEMS design, fabrication and application as well as the physical modeling of their materials, transport phenomena and operations are discussed. Chapters on 3Both talks have been reprinted in the Journal of Microelectromechanical Systems 1(1), pp. 60–66, 1992; 2(1), pp. 4–14, 1993.the electrical, structural, fluidic, transport and control aspects of MEMS are included. Other chapters cover existing and potential applications of microdevices in a variety of fields including instrumentation and distributed control. Physical understanding of the different phenomena unique to micromachines is emphasized throughout this book. The handbook is divided into four parts: Part I provides background and physical considerations, Part II discusses the design and fabrication of microdevices, Part III reviews a few of the applications of microsensors and microactuators, and Part IV ponders the future of the field. The 36 chapters are written by the world’s foremost authorities on this multidisciplinary subject. The contributing authors come from academia, government and industry. Without compromising rigorous-ness, the text is designed for maximum readability by a broad audience having an engineering or science background. The nature of the book—being a handbook and not an encyclopedia—and its size limitation dictate the exclusion of several important topics in the MEMS area of research and development.Our objective is to provide a current overview of the fledgling discipline and its future developments for the benefit of working professionals and researchers. The handbook will be a useful guide and reference to the explosive literature on MEMS and should provide the definitive word for the fundamentals and applications of microfabrication and microdevices. Glancing at the table of contents, the reader may rightly sense an overemphasis on the physics of microdevices. This is consistent with the strong conviction of the editor-in-chief that the MEMS technology is moving too fast relative to our understanding of the unconventional physics involved. This technology can certainly benefit from a solid foundation of the underlying fundamentals. If the physics is better understood, better, less expensive and more efficient microdevices can be designed, built and operated for a variety of existing and yet-to-be-dreamed appli-cations. Consistent with this philosophy, chapters on control theory, distributed control and soft com-puting are included as the backbone of the futuristic idea of using colossal numbers of microsensors and microactuators in reactive control strategies aimed at taming turbulent flows to achieve substantial energy savings and performance improvements of vehicles and other man-made devices.I shall leave you now for the many wonders of the small world you are about to encounter when navigating through the various chapters that follow. May your voyage to Lilliput be as exhilarating, enchanting and enlightening as Lemuel Gulliver’s Travels into Several Remote Nations of the World. Hekinah deg ul! Jonathan Swift may not have been a good biologist and his scaling laws were not as good as those of William Trimmer (see Chapter 2 of this book), but Swift most certainly was a magnificent storyteller. Hnuy illa nyha majah Yahoo!ReferencesAmato, I. (1998) “Formenting a Revolution, in Miniature,” Science282(5388), 16 October, pp. 402–405. Angell, J.B., Terry, S.C., and Barth, P.W. (1983) “Silicon Micromechanical Devices,” Faraday Trans. I68, pp. 744–748.Ashley, S. (1996) “Getting a Microgrip in the Operating Room,” Mech. Eng.118, September, pp. 91–93. Bryzek, J., Peterson, K., and McCulley, W. (1994) “Micromachines on the March,” IEEE Spectrum31, May, pp. 20–31.Busch-Vishniac, I.J. (1998) “Trends in Electromechanical Transduction,” Phys. Today 51, July, pp. 28–34. Chalmers, P. (2001) “Relay Races,” Mech. Eng.123, January, pp. 66–68.Epstein, A.H. (2000) “The Inevitability of Small,” Aerosp. Am.38, March, pp. 30–37.Epstein, A.H., and Senturia, S.D. (1997) “Macro Power from Micro Machinery,” Science276, 23 May, p. 1211.Epstein, A.H., Senturia, S.D., Al-Midani, O., Anathasuresh, G., Ayon, A., Breuer, K., Chen, K.-S., Ehrich, F.F., Esteve, E., Frechette, L., Gauba, G., Ghodssi, R., Groshenry, C., Jacobson, S.A., Kerrebrock, J.L., Lang, J.H., Lin, C.-C., London, A., Lopata, J., Mehra, A., Mur Miranda, J.O., Nagle, S., Orr, D.J., Piekos, E., Schmidt, M.A., Shirley, G., Spearing, S.M., Tan, C.S., Tzeng, Y.-S., and Waitz, I.A. (1997)“Micro-Heat Engines, Gas Turbines, and Rocket Engines—The MIT Microengine Project,” AIAA Paper No. 97-1773, American Institute of Aeronautics and Astronautics, Reston, V A.Feynman, R.P. (1961) “There’s Plenty of Room at the Bottom,” in Miniaturization, ed. H.D. Gilbert, pp. 282–296, Reinhold Publishing, New Y ork.Gabriel, K.J. (1995) “Engineering Microscopic Machines,” Sci. Am.260, September, pp. 150–153. Garcia, E.J., and Sniegowski, J.J. (1993) “The Design and Modelling of a Comb-Drive-Based Microengine for Mechanism Drive Applications,” in Proc. Seventh Int. Conf. on Solid-State Sensors and Actuators (Transducers ’93), pp. 763–766, 7–10 June, Y okohama, Japan.Garcia, E.J., and Sniegowski, J.J. (1995) “Surface Micromachined Microengine,” Sensors and ActuatorsA 48, pp. 203–214.Gabriel, K.J., Jarvis, J., and Trimmer, W., eds. (1988) Small Machines, Large Opportunities: A Report on the Emerg ing Field of Microdynamics, National Science Foundation, AT&T Bell Laboratories, Murray Hill, NJ.Gabriel, K.J., Tabata, O., Shimaoka, K., Sugiyama, S., and Fujita, H. (1992) “Surface-Normal Electrostatic/ Pneumatic Actuator,” in Proc. IEEE Micro Electro Mechanical Systems ’92, pp. 128–131, 4–7 February, Travemünde, Germany.Goldin, D.S., Venneri, S.L., and Noor, A.K. (2000) “The Great out of the Small,” Mech.Eng.122, November, pp. 70–79.Gravesen, P., Branebjerg, J., and Jensen, O.S. (1993) “Microfluidics—A Review,” J. Micromech. Microeng.3, pp. 168–182.Ho, C.-M., and Tai, Y.-C. (1996) “Review: MEMS and Its Applications for Flow Control,” J. Fluids Eng.118,pp. 437–447.Ho, C.-M., and Tai, Y.-C. (1998) “Micro-Electro-Mechanical Systems (MEMS) and Fluid Flows,” Annu.Rev. Fluid Mech. 30, pp. 579–612.Hogan, H. (1996) “Invasion of the Micromachines,” New Sci.29, June, pp. 28–33.Knight, J. (1999) “Dust Mite’s Dilemma,” New Sci.162(2180), 29 May, pp. 40–43.Kovacs, G.T.A. (1998) Micromachined Transducers Sourcebook, McGraw-Hill, New Y ork.Lipkin, R. (1993) “Micro Steam Engine Makes Forceful Debut,” Sci. News144, September, p. 197. Madou, M. (1997) Fundamentals of Microfabrication, CRC Press, Boca Raton, FL.O’Connor, L. (1992) “MEMS: Micromechanical Systems,” Mech.Eng.114, February, pp. 40–47.O’Connor, L., and H utchinson, H. (2000) “Skyscrapers in a Microworld,” Mech.Eng.122, March, pp. 64–67.Ouellette, J. (1996) “MEMS: Mega Promise for Micro Devices,” Mech.Eng.118, October, pp. 64–68. Paula, G. (1996) “MEMS Sensors Branch Out,” Aerosp. Am.34, September, pp. 26–32.Robinson, E.Y., Helvajian, H., and Jansen, S.W. (1996a) “Small and Smaller: The World of MNT,” Aerosp.Am.34, September, pp. 26–32.Robinson, E.Y., Helvajian, H., and Jansen, S.W. (1996b) “Big Benefits from Tiny Technologies,” Aerosp.Am.34, October, pp. 38–43.Roco, M.C. (2001) “A Frontier for Engineering,” Mech.Eng.123, January, pp. 52–55.Sniegowski, J.J., and Garcia, E.J. (1996) “Surface Micromachined Gear Trains Driven by an On-Chip Electrostatic Microengine,” IEEE Electron Device Lett. 17, July, p. 366.Swift, J. (1726) Gulliver’s Travels, 1840 reprinting of Lemuel Gulliver’s Travels into Several Remote Nations of the World, Hayward & Moore, London.Tang, W.C., and Lee, A.P. (2001) “Military Applications of Microsystems,” Ind. Physicist7, February, pp. 26–29.Tien, N.C. (1997) “Silicon Micromachined Thermal Sensors and Actuators,” Microscale Thermophys.Eng.1, pp. 275–292.。
MEMS硅膜电容式气象压力传感器的研制.
MEMS硅膜电容式气象压力传感器的研制1 引言大气压力传感器在工业生产、气象预报、气候分析、环境监测、航空航天等方面发挥着不可替代的作用。
传统的压力传感器一般为机械式,体积比较大,不利于微型化和集成化。
利用MEMS技术不仅可以解决上述缺点,还能极大地降低成本,而性能更为优异。
如今基于MEMS技术得到广泛应用的压力传感器主要有压阻式和电容式两大类,压阻式压力传感器的线性度很好,但精度一般,温漂大,一致性差;电容式压力传感器与之相比,精度更高,温漂小,芯片结构更具鲁棒性,但线性度差且易受寄生电容的影响。
目前MEMS电容式压力传感器多用于过压测量,用于气象压力测量的较少且价格昂贵。
为此,本文研制了一种高性能、低成本的微型电容气象压力传感器,整个流程工艺简单标准,薄膜材料选择单晶硅,采用接触式结构,利用阳极键合形成真空腔,最后由KOH各向异性腐蚀和深刻蚀形成硅薄膜。
试验结果表明,该传感器适用于气象压力测量。
2 基本原理和结构电容式压力传感器的基本结构如图1所示。
式中:ε0为真空中的介电常数;t 为绝缘层的厚度;εr为绝缘层的相对介电常数;g为零载荷时电容器两极板之间的初始距离;ω(x,y)为极板膜的中平面的垂向位移。
由公式可知,外界压力通过改变电容的极板面积和间距来改变电容。
随着压力慢慢增大,电容因极板间距减小而增大,此时电容值由非接触电容来决定;当两极板接触时,电容的大小则主要由接触电容来决定。
3 传感器的设计与制造敏感薄膜是传感器最核心的部件,其材料、尺寸和厚度决定着传感器的性能。
目前敏感薄膜的材料多采用重掺杂p型硅、Si3N4、单晶硅等。
这几种材料都各有优缺点,其选择与目标要求和具体工艺相关。
硅膜不破坏晶格,机械性能优异,适于阳极键合形成空腔,从简化工艺的目的出发,本方案选择硅膜。
利用有限元分析软件ANSYS对接触式结构的薄膜工作状态进行了模拟。
材料为Si,膜的形状为正方形,边长1000 μm,膜厚5 μm,极板间距10 μm。
第十五章MEMS传感器讲述课件
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应用范围
体微加工技术适用于制造 一些特殊类型的MEMS传 感器,如流体传感器、生 物传感器等。
键合与封装技术
定义
键合与封装技术是将MEMS传感 器与外部电路和保护壳体进行连
接和封装的过程。
工艺流程
键合与封装技术包括芯片粘接、引 线键合、密封填充等步骤,以确保 MEMS传感器能够在实际应用中稳 定工作。
。
集成化
MEMS传感器通常与其 他电子器件集成在一起 ,形成一个完整的系统
。
高精度
MEMS传感器的精度非 常高,能够实现高精度
的测量。
低功耗
MEMS传感器的功耗非 常低,能够延长设备的
续航时间。
材料选择
单晶硅
单晶硅是MEMS传感器的主要材料之一,具 有高强度、高刚度和良好的热稳定性。
多晶硅
多晶硅材料具有较好的塑性和韧性,适合用 于制造柔性MEMS传感器。
未来发展趋势
01
新材料应用
随着新材料的发展,MEMS传 感器的性能将得到进一步提升 。
02
智能化
未来MEMS传感器将更加智能 化,能够自适应调整参数以提 高性能。
03
网络化
随着物联网技术的发展, MEMS传感器将更加网络化, 实现远程监控和管理。
04
个性化与定制化
随着需求的多样化,MEMS传 感器的设计和应用将更加个性 化与定制化。
分辨率与精度
分辨率
分辨率是指传感器能够检测到的 最小输入信号变化量。分辨率越 高,传感器能够检测到的信号变 化越细微。
精度
精度是指传感器测量结果的准确 性。高精度的传感器能够提供更 接近真实值的测量结果。
MEMS传感器研发手册
MEMS传感器一般是把敏感单元和信号处理电路集成在一个芯片上。
这样,传感器不仅能够感知被测参数,将其转换成方便度量的信号,而且能对所得到的信号进行分析、处理和识别、判断,因此被称为智能传感器。
MEMs传感器的主要优点有以下几点。
a.可提高信噪比。
在同一个芯片上进行信号传输前可放大信号以提高信号水平,减小干扰和传输的噪声,特别是同一芯片上进行A/D转换时,更能改善信噪比。
b.可改善传感器悸性能。
因这种传感器集成了敏感元件、放大电路和补偿电路(如微型压力传感器)在同一芯片上在实现传感探测的同时具有信号处理的功能(在同一芯片上的反馈电路可改善输出钽电容的线性度和频响特性):因为集成了补偿电路,可降低由温度或由应变等因素引起的误差;在同一芯片上的电压式电流源可提供自动的或周期性的自校准和自诊断。
c.输出信号的调节功能。
集成在芯片上的电路可以在信号传输前预先完成A/D转换、阻抗匹配、输出信号格式化以及信号平均等信号调节和处理工作。
d.MEMS传感器还可以把多个相同的敏感元件集成在同一芯片上形成传感器阵列(如微型触觉传感器);或把不同的敏感元件集成在同一芯片上实现多功能传感(如微型气敏传感器)c%ddze.由于MEMS传感器体积微小,重量极轻,因此其附贴片钽电容加质量等因素对被测系统的影响可以忽略不计,可提高测量精度。
MEMS传感器种类繁多,可用来测量的参量很多,主要可分为以下几类。
a.压力传感器:通常有测量绝对压力的传感器和计量压力的传感器。
b:热学传感器:温度、热量和热流传感器。
c.力学传感器:力、压强、速度、加速度和位置传感器。
d.化学传感器:化学浓度、化学成分和AVX反应率传感器。
e.磁学传感器:磁场强度、磁通密度和磁化强度传感器。
f.辐射传感器:电磁波强度、磁通密度和磁化强度传感器。
g.电学传感器:电压、电流和电荷传感器。
就应用领域来讲:包括军事、生物医学、汽车业等MEMS压力传感器的原理与应用作者:颜重光上海市传感技术学会MEMS(Micro Electromechanical System,即微电子机械系统)是指集微型传感器、执行器以及信号处理和控制电路、接口电路、通信和电源于一体的微型机电系统。
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MEMS传感器一般是把敏感单元和信号处理电路集成在一个芯片上。
这样,传感器不仅能够感知被测参数,将其转换成方便度量的信号,而且能对所得到的信号进行分析、处理和识别、判断,因此被称为智能传感器。
MEMs传感器的主要优点有以下几点。
a.可提高信噪比。
在同一个芯片上进行信号传输前可放大信号以提高信号水平,减小干扰和传输的噪声,特别是同一芯片上进行A/D转换时,更能改善信噪比。
b.可改善传感器悸性能。
因这种传感器集成了敏感元件、放大电路和补偿电路(如微型压力传感器)在同一芯片上在实现传感探测的同时具有信号处理的功能(在同一芯片上的反馈电路可改善输出钽电容的线性度和频响特性):因为集成了补偿电路,可降低由温度或由应变等因素引起的误差;在同一芯片上的电压式电流源可提供自动的或周期性的自校准和自诊断。
c.输出信号的调节功能。
集成在芯片上的电路可以在信号传输前预先完成A/D转换、阻抗匹配、输出信号格式化以及信号平均等信号调节和处理工作。
d.MEMS传感器还可以把多个相同的敏感元件集成在同一芯片上形成传感器阵列(如微型触觉传感器);或把不同的敏感元件集成在同一芯片上实现多功能传感(如微型气敏传感器)c%ddz
e.由于MEMS传感器体积微小,重量极轻,因此其附贴片钽电容加质量等因素对被测系统的影响可以忽略不计,可提高测量
精度。
MEMS传感器种类繁多,可用来测量的参量很多,主要可分为以下几类。
a.压力传感器:通常有测量绝对压力的传感器和计量压力的传感器。
b:热学传感器:温度、热量和热流传感器。
c.力学传感器:力、压强、速度、加速度和位置传感器。
d.化学传感器:化学浓度、化学成分和AVX反应率传感器。
e.磁学传感器:磁场强度、磁通密度和磁化强度传感器。
f.辐射传感器:电磁波强度、磁通密度和磁化强度传感器。
g.电学传感器:电压、电流和电荷传感器。
就应用领域来讲:包括军事、生物医学、汽车业等
MEMS压力传感器的原理与应用
作者:颜重光上海市传感技术学会
MEMS(Micro Electromechanical System,即微电子机械系统)是指集微型传感器、执行器以及信号处理和控制电路、接口电路、通信和电源于一体的微型机电系统。
MEMS压力传感器可以用类似集成电路的设计技术和制造工艺,进行高精度、低成本的大批量生产,从而为消费电子和工业过程控制产品用低廉的成本大量使用MEMS传感器打开方便
之门,使压力控制变得简单、易用和智能化。
传统的机械量压力传感器是基于金属弹性体受力变形,由机械量弹性变形到电量转换输出,因此它不可能如MEMS压力传感器那样,像集成电路那么微小,而且成本也远远高于MEMS压力传感器。
相对于传统的机械量传感器,MEMS压力传感器的尺寸更小,最大的不超过一个厘米,相对于传统“机械”制造技术,其性价比大幅度提高。
图1 惠斯顿电桥电原理
图2 应变片电桥的光刻版本
图3 硅压阻式压力传感器结构
MEMS压力传感器原理
目前的MEMS压力传感器有硅压阻式压力传感器和硅电容式压力传感器,两者都是在硅片上生成的微机械电子传感器。
硅压阻式压力传感器是采用高精密半导体电阻应变片组成惠斯顿电桥作为力电变换测量电路的,具有较高的测量精度、较低的功耗和极低的成本。
惠斯顿电桥的压阻式传感器,如无压力变化,其输出为零,几乎不耗电。
其电原理如图1所示。
硅压阻式压力传感器其应变片电桥的光刻版本如图2。
MEMS硅压阻式压力传感器采用周边固定的圆形应力杯硅薄膜内壁,采用MEMS技术直接将四个高精密半导体应变片刻制在其表面应力最大处,组成惠斯顿测量电桥,作为力电变换测量电路,将压力这个物理量直接变换成电量,其测量精度能达0.01-0.03%FS。
硅压阻式压力传感器结构如图3所示,上下二
层是玻璃体,中间是硅片,硅片中部做成一应力杯,其应力硅薄膜上部有一真空腔,使之成为一个典型的绝压压力传感器。
应力硅薄膜与真空腔接触这一面经光刻生成如图2的电阻应变片电桥电路。
当外面的压力经引压腔进入传感器应力杯中,应力硅薄膜会因受外力作用而微微向上鼓起,发生弹性变形,四个电阻应变片因此而发生电阻变化,破坏原先的惠斯顿电桥电路平衡,电桥输出与压力成正比的电压信号。
图4是封装如集成电路的硅压阻式压力传感器实物照片。
图4 硅压阻式压力传感器实物
图6 电容式压力传感器实物
图5 电容式压力传感器结构
电容式压力传感器利用MEMS技术在硅片上制造出横隔栅状,上下二根横隔栅成为一组电容式压力传感器,上横隔栅受压力作用向下位移,改变了上下二根横隔栅的间距,也就改变了板间电容量的大小,即△压力=△电容量(图5)。
电容式压力传感器实物如图6。
MEMS压力传感器的应用
MEMS压力传感器广泛应用于汽车电子如TPMS、发动机机油压力传感器、汽车刹车系统空气压力传感器、汽车发动机进气歧管压力传感器(TMAP)、柴油机轨压力传感器。
消费电子如胎压计、血压计、橱用秤、健康秤,洗衣机、洗碗机、电冰箱、微波炉、烤箱、吸尘器用压力传感器,空调压力传感器,洗衣机、
饮水机、洗碗机、太阳能热水器用液位控制压力传感器。
工业电子如数字压力表、数字流量表、工业配料称重等。
典型的MEMS压力传感器管芯(die)结构和电原理如图7所示,左是电原理图,即由电阻应变片组成的惠斯顿电桥,右为管芯内部结构图。
典型的MEMS压力传感器管芯可以用来生产各种压力传感器产品,如图8所示。
MEMS压力传感器管芯可以与仪表放大器和ADC管芯封装在一个封装内(MCM),使产品设计师很容易使用这个高度集成的产品设计最终产品。
MEMS压力传感器Die的设计、生产、销售链
MEMS压力传感器Die的设计、生产、销售链如图9所示。
目前集成电路的4寸圆晶片生产线的大多数工艺可为MEMS生产所用。
但是需要增加双面光刻机、湿法腐蚀台和键合机三项MEMS 特有的工艺设备。
压力传感器产品生产厂商需要增加价格不菲的标准压力检测设备。
对于MEMS压力传感器生产厂家来说,开拓汽车电子以及消费电子领域的销售经验和渠道是十分重要和急需的。
特别是汽车电子对MEMS压力传感器的需要量在近几年激增,如捷伸电子的年需求量约为200-300万个。
MEMS芯片在设计、工艺、生产方面与IC的异同与传统IC行业注重二维静止的电路设计不同,MEMS以理论力学为基础,结合电路知识设计三维动态产品。
对于在微米尺度进行机械设计会更多地依靠经验,设计开发工具(Ansys)也与
传统IC(如EDA)不同。
MEMS加工除了使用大量传统的IC工艺,还需要一些特殊工艺,如双面刻蚀,双面光刻等。
MEMS比较传统IC,工艺简单,光刻步骤少,MEMS生产的一些非标准的特殊工艺,工艺参数需要按照产品的要求来进行调整。
由于需要产品设计、工艺设计和生产三方面的密切配合,IDM的模式要优于Fabless+Foundry的模式。
MEMS对封装技术的要求很高。
传统半导体厂商的4〃生产线正面临淘汰,即使用来生产LDO,其利润也非常低,但是,如果生产MEMS,则可获得较高的利润。
4〃线上的每一个圆晶片可生产合格的MEMS压力传感器Die5-6K个,每个出售后,可获成本7-10倍的毛利(如图10)。
转产MEMS对厂家的工艺要求改动不大,新增辅助设备有限,投资少、效益高。
MEMS芯片与IC芯片整合封装是集成电路技术发展的新趋势,也是传统IC厂商的新机遇。
图11是MEMS在4〃圆晶片生产线上。
4〃生产MEMS压力传感器Die成本估计
4”圆晶片生产线生产MEMS压力传感器Die成本估计如表所示,新增固定成本是指为该项目投入的人员成本和新设备的折旧(人员:专家1名+MEMS设计师2名+工程师4名+工艺师5名+技工12名,年成本147万元,新增设备投入650万元,按90%四年折旧计算);现有4”线成本是指在5次光刻条件下使用4”线的成本(包括人工、化剂、水电、备件等的均摊成本);硅片材料成本是指双抛4寸硅片的价格。