STZC6.8N中文资料
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Diodes
1/2
ESD Protection diode
STZC6.8N
z Application
ESD Protection, bi direction
z Features 1) Ultra small mold type. (SMD3) 2) High reliability .
3) Ultra low capacitance
z Construction
Silicon epitaxial planar z Structure
z
Diodes
2/2
z Electrical characteristic curves
6.5
6.66.76.86.97
0.1
1
10
0.5
1
1.5
2
2.5
3
3.5
4
REVERSE VOLTAGE：VR(V)VR-IR CHARACTERISTICS
R E V E R S E C U R R E N T :I R (n A )
R E V E R S E C U R R E N T :I R (n A )
IR DISRESION MAP C A P A C I T A N C E B E T W E E N T E R M I N A L S :C t (p F )
REVERSE VOLTAGE:VR(V)VR-Ct CHARACTERISTICS
Ct DISRESION MAP
C A P A C I T A N C E B E T W E E N T E R M I N A L S :C t (p F )
Z E N E R C U R R E N T :I z (m A )
ZENER VOLTAGE:Vz(V)Vz-Iz CHARACTERISTICS
D Y N A M I C I M P
E D A N C E :Z z (Ω)
ZENER CURRENT(mA)Zz-Iz CHARACTERISTICS
Vz DISRESION MAP Z E N E R V O L T A G E :V z (Ｖ)
TIME:t(s)
Rth-t CHARACTERISTICS
T R A N S I E N T T H A E R M A L I M P E D A N C E :R t h (℃/W )
0.00001
0.0001
0.001
0.010.1110
100
1
2
3
4
0.020.040.060.080.10.120.14
0.160.18
0.2
110
100
0.1
1
10
1234
5678910
110
100
1000
0.001
0.01
0.11101001000
1ms
0.001
0.01
0.11
10
6
6.57
7.58
Appendix
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1