Method of pinning domain walls in a nanowire magne
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专利名称：Method of pinning domain walls in a
nanowire magnetic memory device
发明人：Kevin O'Grady,Gonzalo Vallejo
Fernandez,Atsufumi Hirohata
申请号：US14350434
申请日：20121008
公开号：US09293184B2
公开日：
20160322
专利内容由知识产权出版社提供
专利附图：
摘要：There is provided a method of pinning domain walls in a magnetic memory device () comprising using an antiferromagnetic material to create domain wall pinning
sites. Junctions () where arrays of ferromagnetic nanowires () and antiferromagnetic nanowires () cross exhibit a permanent exchange bias interaction between the ferromagnetic material and the antiferromagnetic material which creates domain wall pinning sites. The exchange bias field is between 30 to 3600 Oe and the anisotropy direction of the ferromagnetic elements is between 15 to 75° to an anisotropy direction of the antiferromagnetic elements.
申请人：University of York
地址：York GB
国籍：GB
代理机构：DASCENZO Intellectual Property Law, P.C.
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