XP04114资料

4
Input voltage VIN (V)
–1000 –300 –100 –30 –10 –3
–100 –30 –10 –3 –1 –0.3 –0.1 –0.1 –0.3
3
2
1
0 –0.1 –0.3
–1
–3
–10
–30
–100
–1 –0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
–10
–30
2.0±0.1
s Features
0.65
1 2 3
6 5 4
0.2
0.9±0.1
s Basic Part Number of Element
q
0 to 0.1
UN1114 × 2 elements
0.7±0.1
0.2±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Rating Collector to emitter voltage of element Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VC
IO — VIN
f=1MHz IE=0 Ta=25˚C –10000 –3000 VO=–5V Ta=25˚C –1000 –300
VIN — IO
VO= –0.2V Ta=25˚C
Collector output capacitance Cob (pF)
5
Output current IO (µA)
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Composite Transistors
XP4114
Silicon PNP epitaxial planer transistor
Unit: mm
0.425 1.25±0.1 0.425
0.2±0.05
For switching/digital circuits
(Ta=25˚C)
Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 R1/R2 Conditions IC = –10µA, IE = 0 IC = –2mA, IB = 0 VCB = –50V, IE = 0 VCE = –50V, IB = 0 VEB = –6V, IC = 0 VCE = –10V, IC = –5mA IC = –10mA, IB = – 0.3mA VCC = –5V, VB = – 0.5V, RL = 1kΩ VCC = –5V, VB = –2.5V, RL = 1kΩ VCB = –10V, IE = 1mA, f = 200MHz –30% 0.17 80 10 0.21 +30% 0.25 –4.9 – 0.2 80 – 0.25 V V V MHz kΩ min –50 –50 – 0.1 – 0.5 – 0.2 typ max Unit V V µA µA mA
(Ta=25˚C)
Ratings –50 –50 –100 150 150 –55 to +150 Unit V V mA mW ˚C ˚C
1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin)
–100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
2
0.12 –0.02
+0.05
1
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Composite Transistors
PT — Ta
250
XP4114
Total power dissipation PT (mW)
200
150
100
50
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
IC — VCE
–160 –100
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
Ta=25˚C IC/IB=10 400
hFE — IC
VCE=–10V
IB=–1.0mA
–30 –10 –3 –1 –0.3 –0.1 –0.03 –25˚C –0.01 –0.1 –0.3 –1 –3 –10 –30 –100 25˚C Ta=75˚C
2.1±0.1
0.65
q
q
Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
Marking Symbol: BK Internal Connection
1 2 3 Tr1 6 5 4
Tr2
s Electrical Characteristics
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance Resistance ratio
–140
300
Ta=75˚C 200 25˚C –25˚C 100
–8
–10
–12
0 –1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage VCE (V)
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
–120 –100 –80 –60 –40 –20 0 0 –2 –4 –6
–0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –0.4mA –0.3mA –0.2mA –0.1mA
Forward current transfer ratio hFE