2SC4553中文资料

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cd4553

MC14553B3-Digit BCD CounterThe MC14553B 3–digit BCD counter consists of 3 negative edge triggered BCD counters that are cascaded synchronously. A quad latch at the output of each counter permits storage of any given count. The information is then time division multiplexed, providing one BCD number or digit at a time. Digit select outputs provide display control.All outputs are TTL compatible.An on–chip oscillator provides the low–frequency scanning clock which drives the multiplexer output selector.This device is used in instrumentation counters, clock displays,digital panel meters, and as a building block for general logic applications.•TTL Compatible Outputs •On–Chip Oscillator •Cascadable•Clock Disable Input•Pulse Shaping Permits Very Slow Rise Times on Input Clock •Output Latches •Master ResetMAXIMUM RATINGS (Voltages Referenced to V ) (Note 1.)may occur.2.Temperature Derating:Plastic “P and D/DW” Packages: – 7.0 mW/_C From 65_C To 125_C This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high–impedance circuit. For proper operation, V in and V out should be constrained to the range V SS v (V in or V out ) v V DD .Unused inputs must always be tied to an appropriate logic voltage level (e.g.,either V SS or V DD ). Unused outputs must be left open.DevicePackage Shipping ORDERING INFORMATIONMC14553BCP PDIP–1625/Rail MC14553BDWSOIC–1647/Rail查询CD4553 供应商Figure 1. Block Diagram121011139765142115V DD = PIN 16V SS = PIN 8TRUTH TABLE4.The formulas given are for the typical characteristics only at 25_C.5.To calculate total supply current at loads other than 50 pF:I T(C L) = I T(50 pF) + (C L – 50) Vfkwhere: I T is in µA (per package), C L in pF, V = (V DD – V SS) in volts, f in kHz is input frequency, and k = 0.004.7.Data labelled “Typ” is not to be used for design purposes but is intended as an indication of the IC’s potential performance.Figure 2. 3–Digit Counter Timing Diagram (Reference Figure 4)100099999899799699599499399299199090190089910110099989796959493929190898887861716151413121110987654321UNITS CLOCKUNITS Q0UNITS Q1UNITS Q2UNITS Q3TENS CLOCKTENS Q0TENS Q3HUNDREDSCLOCK HUNDREDS Q0HUNDREDS Q3DISABLE OVERFLOW MASTER RESET SCAN OSCILLATOR DIGIT SELECT 1DIGIT SELECT 2DIGIT SELECT 3LLOPERATING CHARACTERISTICSThe MC14553B three–digit counter, shown in Figure 4,consists of three negative edge–triggered BCD counters which are cascaded in a synchronous fashion. A quad latch at the output of each of the three BCD counters permits storage of any given count. The three sets of BCD outputs (active high), after going through the latches, are time division multiplexed, providing one BCD number or digit at a time. Digit select outputs (active low) are provided for display control. All outputs are TTL compatible.An on–chip oscillator provides the low frequency scanning clock which drives the multiplexer output selector.The frequency of the oscillator can be controlled externally by a capacitor between pins 3 and 4, or it can be overridden and driven with an external clock at pin 4. Multiple devices can be cascaded using the overflow output, which provides one pulse for every 1000 counts.The Master Reset input, when taken high, initializes the three BCD counters and the multiplexer scanning circuit.While Master Reset is high the digit scanner is set to digit one; but all three digit select outputs are disabled to prolong display life, and the scan oscillator is inhibited. The Disable input, when high, prevents the input clock from reaching the counters, while still retaining the last count. A pulse shaping circuit at the clock input permits the counters to continue operating on input pulses with very slow rise rmation present in the counters when the latch input goes high, will be stored in the latches and will be retained while the latch input is high, independent of other rmation can be recovered from the latches after the counters have been reset if Latch Enable remains high during the entire reset cycle.Figure 4. Expanded Block DiagramBCD OUTPUTS (ACTIVE HIGH)(ACTIVE HIGH)Figure 5. Six–Digit DisplayS T R O R E S C L O C K I N P U TD I S P L A Y S A RE L O W C U R R E N T L E D s(I p e a k < 10 m A P E R S E G M E N T )PDIP–16P SUFFIX PLASTIC DIP PACKAGENOTES:1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.DIMENSION L TO CENTER OF LEADS WHENFORMED PARALLEL.4.DIMENSION B DOES NOT INCLUDE MOLD FLASH.5.ROUNDED CORNERS OPTIONAL.MDIM MIN MAX MIN MAXMILLIMETERSINCHESA0.7400.77018.8019.55B0.2500.270 6.35 6.85C0.1450.175 3.69 4.44D0.0150.0210.390.53F0.0400.70 1.02 1.77G0.100 BSC 2.54 BSCH0.050 BSC 1.27 BSCJ0.0080.0150.210.38K0.1100.130 2.80 3.30L0.2950.3057.507.74M0 10 0 10S0.0200.0400.51 1.01____SOIC–16DW SUFFIX PLASTIC SOIC PACKAGE CASE 751G–03Notes11NotesON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATIONCENTRAL/SOUTH AMERICA:Spanish Phone:303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)Email:ONlit–spanish@Toll–Free from Mexico: Dial 01–800–288–2872 for Access –then Dial 866–297–9322ASIA/PACIFIC: LDC for ON Semiconductor – Asia SupportPhone:303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)Toll Free from Hong Kong & Singapore:001–800–4422–3781Email: ONlit–asia@JAPAN: ON Semiconductor, Japan Customer Focus Center4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031Phone: 81–3–5740–2700。

CD4553

数字脉搏测试电路的设计正常人的脉搏次数是每分钟60～80次（婴儿为90～140次,老年人则为100～150次), 这种频率信号属于低频范畴.因此,脉搏计的用来测量低频信号的装置,它的基本功能要求应该是:1.要把人体的脉搏数(振动)转换成电信号,这就需要借助传感器。

2.对转换后的电信号要进行放大和整形处理，以保证其它电路能正常加工和处理。

3.在很短的时间（若干秒）内，测出经放大后的电信号频率值。

总之，脉搏计的核心是要对低频信号在固定的短时间计数，最后以数字形式显示出来。

可见，脉搏计的主要组成部分是计数器和数字显示器。

1 设计思想脉搏计的上述功能要求，可采用两个不同的方案来实现：1.把转换为电信号的脉搏信号，在单位时间内（一分钟或半分钟）进行计数，并用数字显示其计数值，从而直接得到每分钟的脉搏数。

2.测量脉搏跳动固定次数（比如5次，10次）所需的时间，然后转换为没分钟的脉搏数。

这两种方案比较起来，第一种更直观，所需的电路结构更简单些；第二种方案的测量误差比较小，但实现起来电路要复杂些。

为了使脉搏计轻巧而便宜，通常采用第一种方案。

本文进行的设计就基于这一方案。

这种设计方案的方框图如下图1：图1 脉搏计组成方框图方框图中各部分的作用是：（1）传感器：将脉搏转换成相应的电脉冲信号；（2）放大电路：对微小电脉冲信号进行放大；（3）时基产生电路：产生固定时间（1分钟或半分钟）的控制信号，作为计数器的门控，使计数器只有在此期间才进行计数；（4）计数、译码、显示电路：在门控信号作用期间，对电脉冲信号进行技术，并显示译码器译码，再由数码管显示计数值；（5）心率监测电路：如果出现心率不齐，应有所告警。

2 功能模块实现2.1 传感器为了把脉搏转换成电信号，应采用压电式传感器。

它有两种基本类型：石英晶体和压电陶瓷。

前者温度稳定性和机械强度都很高，工作温度范围宽，转换精度也高。

而压电陶瓷是人工制造的压电材料。

优点是压电系数大、灵敏度高、价格便宜，只是温度稳定性和强度不如石英晶体。

2SA系列(PNP型)三极管全参数表

25
-1.5
-180
-160
120M
60-200
3CA10F
2SA1011S
SANYO
硅PNP三极管,功率放大，场输出，配对管2SC2344
25
-1.5
-180
-160
120M
60-200
3CA10F
2SA1011W
WS
硅PNP三极管,功率放大，场输出，配对管2SC2344
25
-1.5
-180
-160
200m
-500m
-40
-32
200M
82-390
2SA1037AK
ROHM
硅PNP三极管,一般小信号放大，配对管2SC2412K
200m
-150m
-60
-50
140M
120-560
2SA1037B
LRC
硅PNP三极管,一般小信号放大，配对管2SC2412K/2SC4081
200m
-150m
-60
-50
-25
200M
50-340
CK77A
2SA0684
PANASONIC
硅PNP三极管,低频功率放大和驱动，配对管2SC1384
1
-1.5
-60
-50
200M
50-340
CK77A
2SA0794
PANASONIC
硅PNP三极管,低频功率放大和驱动，配对管2SC1567
1.2
-500m
-100
-100
120M
60M
70-240
3CA10D
2SA1013
长电
硅PNP三极管,TO-92，放大

2SC945中文资料(Guangdong Kexin)中文数据手册「EasyDatasheet - 矽搜」

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SMD型
NPN硅晶体管 2SC945
■ 特征
● 集电极电流高达150mA
● 高ħ
线性
晶体管二极管
SOT-23
■ 绝对最大额定值大= 25℃
参数集电极基极电压集电极到发射极电压发射器基极电压
集电极电流（DC）
功耗结温存储温度范围
■ 电气特性TA = 25℃
参数集电极基击穿电压
集电极 - 发射极击穿电压
发射基地击穿电压集电极截止电流发射极截止电流
DC电流增益
集电极饱和电压基本饱和电压收藏家基地电容噪声系数转换频率
符
额定值
Unit
V
60
V
V
50
V
V
5
V
I
150
mA
P
200
mW
T
150
℃
T
-55到+150
℃
符
V V V
I I
h
V V
C NF f
Min Typ Max Unit
60
V
50
V
μA
130
400
40
0.3 V
1.0 V
3.0 pF
4 10 dB
150
MHz
1
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SMD型
2SC945
晶体管二极管
2
Testconditons I =100 μA, I =0 I =1mA, I =0 I =100 μA, I =0 V = 60V, I = 0 V = 5.0 V, I = 0 V = 6.0V, I =1.0mA V = 6.0V, I =0.1mA I =100mA,I =10mA I =100mA,I =10mA V = 10 V, I = 0,F = 1兆赫 V =6V,I =0.1mA,R =10kΩ,f=1kMHZ V =6V,I =10毫安,F = 30兆赫

2SC3356R25中文资料(NEC)中文数据手册「EasyDatasheet - 矽搜」

–150˚ –120˚
–30˚ –150˚
–60˚ –90˚
–120˚
–30˚
–60˚ –90˚
Data Sheet PU10209EJ02V0DS
5
10
插入最功大率可增5用益功|率SV增益=M1A0GV（分贝）
I 能力= 20 mA
0 0.05 0.1 0.2
0.5
1
2
频率f（GHz）
5 插入功率增益| S
0
0.5 1
5
集电极电流I
10 (mA)
50 70
备注
该图表显示标称特性.
Data Sheet PU10209EJ02V0DS
3
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2%
2. 收藏家基地电容,当发射器接地
hFE 分类
秩打标
h值
R23/Q R23
50至100
R24/R R24
80至160
R25/S R25
125至250
注意旧规格/新规格
MIN.
TYP. MAX.
单元
–
–
1.0
µA
–
–
1.0
µA
50
120
250
–
–
7
–
GHz
–
11.5
–
dB
–
1.1
2.0
dB0.55订源自信息零件号2SC3356 2SC3356-T1B
数量
50只（不卷） 3千件/卷
供给方式
•8mm宽压花录音 •引脚3（集电极）面带穿孔方
备注
要订购评价样品,请联系您最近销售部门. 单位样品数量为50个.
绝对最大额定值（T

2SC4793中文资料

TOSHIBA Transistor Silicon NPN Epitaxial Type2SC4793Power Amplifier ApplicationsDriver Stage Amplifier Applications• High transition frequency: f T = 100 MHz (typ.) • Complementary to 2SA1837Absolute Maximum Ratings (Tc = 25°C)Characteristics Symbol Rating UnitCollector-base voltage V CBO 230 V Collector-emitter voltage V CEO 230 V Emitter-base voltage V EBO 5 V Collector current I C 1 A Base current I B 0.1 A Ta = 25°C 2.0 Collector powerdissipationTc = 25°CP C20WJunction temperature T j 150 °C Storage temperature rangeT stg−55 to 150°CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Unit: mmJEDEC― JEITA ―TOSHIBA 2-10R1AWeight: 1.7 g (typ.)Electrical Characteristics (Tc = 25°C)Typ.Max UnitCondition Min Characteristics Symbol TestCollector cut-off current I CBO V CB = 230 V, I E = 0 ―― 1.0 μA Emitter cut-off current I EBO V EB = 5 V, I C = 0 ―― 1.0 μA Collector-emitter breakdown voltage V (BR) CEO I C = 10 mA, I B = 0 230 ―― V DC current gain h FE V CE = 5 V, I C = 100 mA 100 ― 320Collector-emitter saturation voltage V CE (sat)I C = 500 mA, I B = 50 mA ―― 1.5 V Base-emitter voltage V BE V CE = 5 V, I C = 500 mA ―― 1.0 V Transition frequency f T V CE = 10 V, I C = 100 mA ― 100 ― MHz Collector output capacitance C ob V CB = 10 V, I E = 0, f = 1 MHz ― 20 ― pF MarkingC4793lead (Pb)-free package orlead (Pb)-free finish.Collector-emitter voltage V CE (V) I C – V CEC ol le c t o r c u r r e n tI C (A )Base-emitter voltage V BE (V)I C – V BEC o l l ec t o r c u r r e n t I C(A )Collector current I C (A)V CE (sat) – I CD C c u r r e n t g a i nh F ECollector current I C (A)V CE (sat) – I CC o l l e c t o r -e m i t t e r s a t u r a t io n vo l t a g e V C E (s a t )(V )Collector current I C (mA) f T – I CT r a n s it i on f r e q u e n c yf T (M H z )Collector-emitter voltage V CE (V)Safe Operating AreaC o l l e c t o r c u r r e n t I C (A )131030 100 300RESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。

2SC5103TLQ中文资料

TransistorsRev.A 1/3High speed switching transistor (60V, 5A)2SC5103z Features1) Low V CE(sat) (Typ. 0.15V at I C / I B = 3 / 0.15A) 2) High speed switching (tf : Typ. 0.1 µs at I C = 3A) 3) Wide SOA. (safe operating area) 4) Complements the 2SA1952.z Absolute maximum ratings (T a=25°C)ParameterSymbol V CBO V CEO V EBOI C P C Tj Tstg Limits 10060551150−55 to +150Unit V V V A(DC)10∗A(Pulse)W10W(Tc =25°C)°C °CSingle pulse Pw=100msCollector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Junction temperature Storage temperatureCollector power dissipation∗z Packaging specifications and h FEType 2SC5103CPT3Q TL 2500Package h FE CodeBasic ordering unit (pieces)z External dimensions (Unit : mm)2.30.51.00.59.52.50.8Min.1.56.52.3(2)(3)C0.50.650.9(1)0.752.30.91.55.5(3) Emitter(2) Collector (1) Base ROHM : CPT3EIAJ : SC-635.1z Electrical characteristics (T a=25°C)TransistorsRev.A 2/3zElectrical characteristics curvesC O L L E C T O R C U R R E N T : I C (A )COLLECTOR TO EMITTER VOLTAGE : V CE (V)Fig.1 Ground emitter output characteristicsBASE TO EMITTER VOLTAGE : V BE (V)C O L L E C T O R C U R R E N T : I C (A )Fig.2 Ground emitter propagation characteristicsD C C U R RE N T G A I N : hF ECOLLECTOR CURRENT : I C (A)Fig.3 DC current gain vs. collector currentB A S E S A T U R A T I O N V O L T A G E : V B E (s a t ) (V )C O L L E C T O R S A T U R A T I O N V O L T A G E: V C E (s a t ) (V )COLLECTOR CURRENT : I C (A )Fig.4 Collector-emitter saturation voltageBase-emitter saturation voltage −collector currentC O L L E C T O R O U T P U T C A P A C I T W A N C E : C o b (p F )COLLECTOR TO BASE VOLTAGE : V CB (V)Fig.6 Collector output capacitance vs. collector-base voltage−T R A N S I T I O N F R E Q U E N C Y : f T (M H z )EMITTER CURRENT : I E (A)Fig.5 Gain bandwidth product vs.emitter currentS T R A G E T I M E : t s t g (µs )F A L LT I M E : t f (µs )T U R N O N T I M E : t o n (µs )COLLECTOR CURRENT : I C (A)Fig.7 Switching characteristicsCOLLECTOR TO EMITTER VOLTAGE : V CE (V)C O L L E C T O R C U R R E N T : I C (A )Fig.8 Safe operating areaTIME : t (s)T R A N S I E N T T H E R M A L R E S I S T A N C E : R t h (°C /W )Fig.9 Transient thermal resistanceTransistorsRev.A 3/3BBFig.10 Switching characteristic circuitAppendixAbout Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.Appendix1-Rev1.1。

2SC2655中文资料(secos)中文数据手册「EasyDatasheet - 矽搜」

Min. Typ. Max.
50
-
-
50
-
-
5
-
-
-
-
1
-
-
1
70
-
240
40
-
-
-
-
0.5
-
-
1.2
-
100
-
-
30
-
-
0.15
-
-
2
-
-
0.15
-
单元 V V V μA μA
V V MHz pF
μs
测试条件
IC=100μA, I E=0 IC=10mA, I B=0 IE=100μA, I C=0 VCB=50V, I E=0 VEB=5V, I C=0 VCE=2V, I C=0.5A VCE=2V, I C=1.5A IC=1A, I B=0.05A IC=1A, I B=0.05A VCE=2V, I C=0.5A VCB=10V, I E=0, f=1MHz VCC=30V IB1= -I B2=0.05A IC=1A
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2SC2655
2A , 50V NPN塑料封装晶体管
符合RoHS产品 "-C"后缀指定卤素及无铅
特征
低饱和电压：V 高速切换时间：T已为补充2SA1020
CE(sat) =0.5V(Max)(I C=1A) stg=1μs(Typ.)
^ h分类
产品秩范围
FE (1) 2SC2655-O
70-140
2SC2655-Y 120-240
收藏家
基地
发射器
TO-92MOD
A

CD4553中文资料

CD4553中文资料CD4553/CC4553是3位十进制计数器，但只有1个输出端，要完成3位输出，采用扫描输出方式，通过它的选通脉冲信号，依次控制3位十进制的输出，从而实现扫描显示方式。

引脚功能：CLOCK：计数脉冲输入端，下调沿有效。

CIA、CIB：内部振荡器的外界电容端子。

MR：计数器清零（只清计数器部分），高电平有效。

LE：锁定允许。

当该端为低电平时，3组计数器的内容分别进入3组锁存器，当该端为高电平时，锁存器锁定，计数器的值不能进入。

DIS：该端接地时，计数脉冲才能进行计数。

DS1、DS2、DS3：位选通扫描信号的输出，这3端能循环地输出低电平，供显示器作为位通控制。

Q0、Q1、Q2、Q3：BCD码输出端，它能分时轮流输出3组锁存器的BCD码。

CD4553内部虽然有3组BCD码计数器（计数最大值为999），但BCD的输出端却只有一组Q0～Q3通过内部的多路转换开关能分时输出个、十、百位的BCD码，相应地，也输出3位位选通信号。

例如：当Q0～Q3输出个位的BCD码时，DS1端输出低电平；当Q0～Q3输出十位的BCD码时，DS2端输出低电平；当Q0～Q3输出百位的BCD码时，DS3端输出低电平时，周而复始、循环不止。

真值表：图1 CD4553引脚图最大额定值（电压参考的VSS ）： Symbol 符号 Parameter 参数 Value 数值Unit 单位 VDD DC Supply Voltage 直流供电电压 Range -0.5 to +18.0 V Vin, Vout Input or Output Voltage Range(DC or Transient)输入或输出电压范围（直流或瞬态）-0.5 to VDD +0.5V Iin Input Current (DC or Transient) per Pin 输入电流（直流或瞬态）每个引脚±10mA Iout Output Current (DC or Transient) per Pin 输出电流（直流或瞬态）每个引脚+20mA PD Power Dissipation, per Package (Note 2.) 功耗 500mW TA Ambient Temperature Range 环境温度范围 –55 to +125 ℃ TstgStorage Temperature Range 储存温度范围–65 to +150℃Characteristic 参数符号VDD Vdc – 55℃25℃ 125℃Unit单位最小最大最小典型最大最小最大 Output Voltage 输出电压VdcVin = VDD or 0“0” Level V OL 5.00.05 0 0.05 — 0.05100.05 0 0.05 — 0.05 150.050.05 — 0.05Vin = 0 or VDD“1” Level V OH 5.0 4.954.955.0 4.95 Vdc109.959.95 10 9.95 15 14.9514.95 1514.95Input Voltage 输入电压Vdc (VO=4.5 or 0.5Vdc) “0” Level VIL 5.01.52.25 1.5 1.5交流开关特性：图2 CD4553 3位数计数器时序图（参考图4）图3 CD4553 开关时间测试电路和波形图4 CD4553方框图6位数显示电路图。

2SC5543资料

2SC5543Silicon NPN EpitaxialVHF / UHF wide band amplifierADE-208-690 (Z)1st. EditionNov. 1998 Features• Super compact package;(1.4 × 0.8 × 0.59mm)• Capable low voltage operation ;= 1V)(VCEOutline2SC55432Absolute Maximum Ratings (Ta = 25°C)ItemSymbol Ratings Unit Collector to base voltage V CBO 15V Collector to emitter voltage V CEO 8V Emitter to base voltage V EBO 1.5V Collector currentI C 20mA Collector power dissipation Pc 80mW Junction temperature Tj 150°C Storage temperatureTstg–55 to +150°CElectrical Characteristics (Ta = 25°C)ItemSymbol Min Typ Max Unit Test Conditions Collector cutoff current I CBO ——10µA V CB = 15V , I E = 0Collector cutoff current I CEO ——1mA V CE = 8V , R BE = ∞Emitter cutoff current I EBO ——10µA V EB = 1.5V , I C = 0DC current transfer ratio h FE 85—170V V CE = 1V , I C = 5mA Collector output capacitance Cob —0.510.9pF V CB = 1V , I E = 0f = 1MHzGain bandwidth product f T 5.58.5—GHz V CE = 1V , I C = 5mA Power gain PG 1113.7—dB V CE = 1V, I C = 5mA f = 900MHz Noise figureNF—1.12.5dBV CE = 1V, I C = 5mA f = 900MHz2SC554332SC554342SC554352SC55436Sparameter (V CE = 1V, I C = 5mA, Zo = 50Ω)S11S21S12S22f (MHz)MAG ANG MAG ANG MAG ANG MAG ANG 1000.836 –20.713.66162.90.024977.40.948–14.2 2000.757 –41.112.22146.90.047268.00.846–26.9 3000.649 –58.510.57134.10.063760.80.727–36.2 4000.564 –73.2 9.14124.50.075056.90.623–42.5 5000.496 –85.2 7.90116.80.084054.20.538–46.2 6000.436 –97.1 6.91111.20.091653.40.469–48.8 7000.396–106.2 6.12105.90.098553.00.413–50.4 8000.364–114.9 5.49102.00.10553.20.368–51.1 9000.338–123.9 4.96 98.30.11153.60.327–51.110000.316–130.6 4.52 95.30.11854.10.297–51.211000.305–140.0 4.16 92.30.12454.70.270–50.712000.296–146.5 3.86 89.80.13055.30.246–49.713000.293–153.0 3.59 87.50.13756.10.229–48.714000.286–159.5 3.36 85.40.14356.60.209–47.915000.287–166.0 3.17 83.20.15057.20.195–46.316000.285–170.7 3.00 81.40.15757.70.180–45.017000.289–175.8 2.83 79.80.16458.20.167–43.818000.294 178.7 2.71 77.90.17158.80.154–42.419000.302 175.4 2.59 75.90.17859.00.144–40.220000.308171.12.4774.50.18559.20.133–38.62SC5543 Package DimensionsUnit: mm7Cautions1.Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,copyright, trademark, or other intellectual property rights for information contained in this document.Hitachi bears no responsibility for problems that may arise with third party’s rights, includingintellectual property rights, in connection with use of the information contained in this document.2.Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use.3.Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,traffic, safety equipment or medical equipment for life support.4.Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product.5.This product is not designed to be radiation resistant.6.No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi.7.Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products.Hitachi, Ltd.Semiconductor & Integrated Circuits.Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.Hitachi Asia Pte. Ltd.16 Collyer Quay #20-00Hitachi TowerSingapore 049318Tel: 535-2100Fax: 535-1533URLNorthAmerica : http:/Europe : /hel/ecg Asia (Singapore): .sg/grp3/sicd/index.htm Asia (Taiwan): /E/Product/SICD_Frame.htm Asia (HongKong): /eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htmHitachi Asia Ltd.Taipei Branch Office3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105)Tel: <886> (2) 2718-3666Fax: <886> (2) 2718-8180Hitachi Asia (Hong Kong) Ltd.Group III (Electronic Components)7/F., North Tower, World Finance Centre,Harbour City, Canton Road, Tsim Sha Tsui,Kowloon, Hong Kong Tel: <852> (2) 735 9218Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd.Electronic Components Group.Whitebrook ParkLower Cookham Road MaidenheadBerkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000Fax: <44> (1628) 778322Hitachi Europe GmbHElectronic components Group Dornacher Stra§e 3D-85622 Feldkirchen, Munich GermanyTel: <49> (89) 9 9180-0Fax: <49> (89) 9 29 30 00Hitachi Semiconductor (America) Inc.179 East Tasman Drive,San Jose,CA 95134 Tel: <1> (408) 433-1990Fax: <1>(408) 433-0223For further information write to:。

2SC系列三极管参数

2SC系列三极管参数2SC系列三极管参数2SC系列三极管参数2SC1000 SI-N 55V 0.1A 0.2W 80MHz2SC1008 SI-N 80V 0.7A 0.8W 75MHz | 2SC1012A SI-N 250V 60mA0.75W >80MHz2SC1014 SI-N 50V 1.5A 7W | 2SC1017 SI-N 75V 1A 60mW 120MHz2SC1030 SI-N 150V 6A 50W | 2SC1046 SI-N 1000V 3A 25W 2SC1047 SI-N 30V 20mA 0.4W 650MHz | 2SC1050 SI-N 300V 1A 40W2SC1051 SI-N 150V 7A 60W 8MHz | 2SC1061 SI-N 50V 3A 25W 8MHz=H1062SC1070 SI-N 30V 20mA 900MHz | 2SC1080 SI-N 110V 12A 100W 4MHz2SC109 SI-N 50V 0.6A 0.6W | 2SC1096 SI-N 40V 3A 10W60MHz2SC1106 SI-N 350V 2A 80W | 2SC1114 SI-N 300V 4A 100W 10MHz2SC1115 SI-N 140V 10A 100W 10MHz | 2SC1116 SI-N 180V 10A 100W 10MHz2SC1161 SI-P 160V 12A 120W | 2SC1162 SI-N 35V 1.5A 10W 180MHz2SC1172 SI-N 1500V 5A 50W | 2SC1195 SI-N 200V 2.5A 100W2SC1213C SI-N 50V 0.5A 0.4W UNI | 2SC1214 SI-N 50V 0.5A 0.6W 50MHz2SC1215 SI-N 30V 50mA 0.4W 1.2GHZ | 2SC1216 SI-N 40V 0.2A0.3W <20/402SC1226 SI-N 40/50V 2A 10W 150MHz | 2SC1238 SI-N 35V 0.15A 5W 1.7GHz2SC1247A SI-N 50V 0.5A 0.4W 60MHz | 2SC1308 SI-N 1500V 7A 50W2SC1312 SI-N 35V 0.1A 0.15W 100MHz | 2SC1318 SI-N 60V 0.5A0.6W 200MHz2SC1343 SI-N 150V 10A 100W 14MHz | 2SC1345 SI-N 55V 0.1A0.1W 230MHz2SC1359 SI-N 30V 30mA 0.4W 250MHz | 2SC1360 SI-N 50V 0.05A 1W >300MHz2SC1362 SI-N 50V 0.2A 0.25W 140MHz | 2SC1368 SI-N 25V 1.5A 8W 180MHz2SC1382 SI-N 80V 0.75A 5W 100MHz | 2SC1384 SI-N 60V 1A 1W 200MHz2SC1393 SI-N 30V 20mA 250 mW 700MHz | 2SC1398 SI-N 70V 2A15W2SC1413A SI-N 1200V 5A 50W | 2SC1419 SI-N 50V 2A 20W 5MHz2SC1426 SI-N 35V 0.2A 2.7GHz | 2SC1431 SI-N 110V 2A 23W 80MHz2SC1432 N-DARL 30V 0.3A 0.3W B=40 | 2SC1439 SI-N 150V 50mA 0.5W 130MHz2SC1445 SI-N 100V 6A 40W 10MHz | 2SC1446 SI-N 300V 0.1A10W 55MHz2SC1447 SI-N 300V 0.15A 20W 80MHz | 2SC1448 SI-N 150V1.5A 25W 3MHz2SC1449 SI-N 40V 2A 5W 60MHz | 2SC1450 SI-N 150V 0.4A 20W2SC1454 SI-N 300V 4A 50W 10MHz | 2SC1474-4 SI-N 20V 2A 0.75W 80MHz2SC1501 SI-N 300V 0.1A 10W 55MHz | 2SC1505 SI-N 300V 0.2A15W2SC1507 SI-N 300V 0.2A 15W 80MHz | 2SC1509 SI-N 80V 0.5A 1W 120MHz2SC1515 SI-N 200V 0.05A 0.2W 110MHz | 2SC1520 SI-N 300V 0.2A 12,5W2SC1545 N-DARL 40V 0.3A 0.3W B=1K | 2SC1567 SI-N 100V 0.5A5W 120MHz2SC1570 SI-N 55V 0.1A 0.2W 100MHz | 2SC1571 SI-N 40V 0.1A0.2W 100MHz2SC1573 SI-N 200V 0.1A 1W 80MHz | 2SC1577 SI-N 500V 8A 80W 7MHz2SC1583 SI-N 50V 0.1A 0.4W 100MHz | 2SC1619 SI-N 100V 6A 50W 10MHz2SC1623 SI-N 60V 0.1A 0.2W 250MHz | 2SC1624 SI-N 120V 1A 15W 30MHz2SC1627 SI-N 80V 0.4A 0.8W 100MHz | 2SC1674 SI-N 30V .02A600MC RF/IF2SC1675 SI-N 50V .03A 0.25W | 2SC1678 SI-N 65V 3A 3W2SC1685 SI-N 60V 0.1A 150MC UNI | 2SC1688 SI-N 50V 30mA0.4W 550MHz2SC1708A SI-N 120V 50mA 0.2W 150MHz | 2SC1729 SI-N 35V 3.5A 16W 500MHz2SC1730 SI-N 30V 0.05A 1.1GHz UHF | 2SC1740 SI-N 40V 100mA 0.3W2SC1741 SI-N 40V 0.5A 0.3W 250MHz | 2SC1756 SI-N 300V0.2A >50MHz2SC1760 SI-N 100V 1A 7.9W 80MHz | 2SC1775A SI-N 120V 0.05A 0.2W UNI2SC1781 SI-N 50V 0.5A 0.35W | 2SC1815 SI-N 50V 0.15A 0.4W 80MHz2SC1815BL SI-N 60V 0.15A 0.4W B>350 | 2SC1815GR SI-N 60V 0.15A 0.4W B>2002SC1815Y SI-N 60V 0.15A 0.4W B>120 | 2SC1827 SI-N 100V 4A 30W 10MHz2SC1832 N-DARL 500V 15A 150W B>10 | 2SC1841 SI-N 120V 0.05A 0.5W2SC1844 SI-N 60V 0.1A 0.5W 100MHz | 2SC1845 SI-N 120V 0.05A 0.5W2SC1846 SI-N 120V 0.05A 0.5W | 2SC1847 SI-N 50V 1.5A 1.2W2SC1855 SI-N 20V 20mA 0.25W 550MHz | 2SC1871 SI-N 450V 15A 150W <1/3us2SC1879 N-DARL+D 120V 2A 0.8W B>1 | 2SC1890 SI-N 90V 0.05A 0.3W 200MHz2SC1895 SI-N 1500V 6A 50W 2MHz | 2SC1906 SI-N 19V 0.05A0.3W2SC1907 SI-N 30V 0.05A 1100MHz | 2SC1913 SI-N 150V 1A 15W 120MHz0.05A 0.6W2SC1922 SI-N 1500V 2.5A 50W | 2SC1923 SI-N 30V 20mA 10mW550MHz2SC1929 SI-N 300V 0.4A 25W 80MHz | 2SC1941 SI-N 160V 50mA 0.8W2SC1944 SI-N 80V 6A PQ=16W | 2SC1945 SI-N 80V 6A 20W 2SC1946A SI-N 35V 7A 50W | 2SC1947 SI-N 35V 1A4W/175MHz2SC1953 SI-N 150V 0.05A 1.2W 70MHz | 2SC1957 SI-N 40V 1A1.8W/27MHz2SC1959 SI-N 30V 0.5A 0.5W 200MHz | 2SC1967 SI-N 35V 2A 8W 470MHz2SC1968 SI-N 35V 5A 3W 470MHz | 2SC1969 SI-N 60V 6A 20W2SC1970 SI-N 40V 0.6A 5W | 2SC1971 SI-N 35V 2A 12.5W2SC1972 SI-N 35V 3.5A 25W | 2SC1975 SI-N 120V 2A 3.8W 50MHz2SC1980 SI-N 120V 20mA 0.25W 200MHz | 2SC1984 SI-N 100V 3A 30W B=7002SC1985 SI-N 80V 6A 40W 10MHz | 2SC2023 SI-N 300V 2A 40W 10MHz2SC2026 SI-N 30V 0.05A 0.25W | 2SC2027 SI-N 1500/800V 5A 50W2SC2036 SI-N 80V 1A PQ=1..4W | 2SC2053 SI-N 40V 0.3A 0.6W 500MHz2SC2055 SI-N 18V 0,3A 0,5W | 2SC2058 SI-N 40V 0.05A 0.25W1A0.75W 120MHz2SC2068 SI-N 300V 0.05A 95MHz | 2SC2073 SI-N 150V 1.5A 25W 4MHz2SC2078 SI-N 80V 3A 10W 150MHz | 2SC2086 SI-N 75V 1A0.45W/27MHz2SC2092 SI-N 75V 3A 5W 27MHz | 2SC2094 SI-N 40V 3.5A PQ>15W 175MHz2SC2097 SI-N 50V 15A PQ=85W | 2SC2120 SI-N 30V 0.8A 0.6W 120MHz2SC2122 SI-N 800V 10A 50W | 2SC2166 SI-N 75V 4A 12.5W RFPOWER2SC2168 SI-N 200V 2A 30W 10MHz | 2SC2200 SI-N 500V 7A 40W1US2SC2209 SI-N 50V 1.5A 10W 150MHz | 2SC2216 SI-N 45V 50mA 0.3W 300MHz2SC2228 SI-N 160V 0.05A 0.75W >50 | 2SC2229 SI-N 200V 50mA 0.8W 120MHz2SC2230 SI-N 200V 0.1A 0.8W 50MHz | 2SC2233 SI-N 200V 4A 40W 8MHz2SC2235 SI-N 120V 0.8A 0.9W 120MHz | 2SC2236 SI-N 30V 1.5A0.9W 120MHz2SC2237 SI-N 35V 2A PQ>7.5W 175MHz | 2SC2238 SI-N 160V 1.5A 25W 100MHz2SC2240 SI-N 120V 50mA .3W 100MHz | 2SC2261 SI-N 180V 8A80W 15MHz2SC2267 SI-N 400/360V 0.1A 0.4W | 2SC2270 SI-N 50V 5A 10W 100MHz2SC2271 SI-N 300V 0.1A 0.9W 50MHz | 2SC2275 SI-N 120V 1.5A25W 200MHz2SC2283 SI-N 38V 0.75A 2.8W(500MHz | 2SC2287 SI-N 38V 1.5A 7.1W 175MHz2SC2295 SI-N 30V 0.03A 0.2W 250MHz | 2SC2307 SI-N 500V 12A 100W 18MHz2SC2308 SI-N 55V 0.1A 0.2W 230MHz | 2SC2310 SI-N 55V 0.1A0.2W 230MHz2SC2312 SI-N 60V 6A 18.5W/27MHz | 2SC2314 SI-N 45V 1A 5W2SC2320 SI-N 50V 0,2A 0,3W | 2SC2329 SI-N 38V 0.75A 2W 175MHz2SC2331 SI-N 150V 2A 15W POWER | 2SC2333 SI-N 500/400V 2A 40W2SC2334 SI-N 150V 7A 40W POWER | 2SC2335 SI-N 500V 7A 40W POWER2SC2336B SI-N 250V 1.5A 25W 95MHz | 2SC2344 SI-N 180V 1.5A 25W 120MHz2SC2347 SI-N 15V 50mA 250mW 650MHz | 2SC2362 SI-N 120V50mA 0.4W 130MHz2SC2363 SI-N 120V 50mA 0.5W 130MHz | 2SC2365 SI-N 600V 6A50W POWER2SC2369 SI-N 25V 70mA 0.25W 4.5GHz | 2SC2383 SI-N 160V 1A2SC2389 SI-N 120V 50mA 0.3W 140MHz | 2SC2407 SI-N 35V 0.15A 0.16W 500MHz2SC2412 SI-N 50V 0.1A 180MHz | 2SC2433 SI-N 120V 30A 150W 80MHz2SC2440 SI-N 450V 5A 40W | 2SC2458 SI-N 50V 0.15A 0.2W 80MHz2SC2466 SI-N 30V 0.05A 2.2GHz | 2SC2482 SI-N 300V 0.1A 0.9W 50MHz2SC2485 SI-N 100V 6A 70W 15MHz | 2SC2486 SI-N 120V 7A 80W 15MHz2SC2491 SI-N 100V 6A 40W 15MHz | 2SC2497 SI-N 70V 1.5A 5W 150MHz2SC2498 SI-N 30V 0.05A 0.3W 3.5GHz | 2SC2508 SI-N 40V 6A 50W 175MHz2SC2510 SI-N 55V 20A 250W(28MHz) | 2SC2512 SI-N 30V 50mA 900MHz TUNE2SC2516 SI-N 150V 5A 30W <0.5/2us | 2SC2517 SI-N 150V 5A 30W <0.5/2us2SC2538 SI-N 40V 0.4A 0.7W | 2SC2539 SI-N 35V 4A 17W175MHz2SC2542 SI-N 450V 5A 40W | 2SC2547 SI-N 120V 0.1A 0.4W 2SC2551 SI-N 300V 0.1A 0.4W 80MHz | 2SC2552 SI-N 500V 2A 20W2SC2553 SI-N 500V 5A 40W 1us | 2SC2562 SI-N 60V 5A 25W0.1us2SC2563 SI-N 120V 8A 80W 90MHz | 2SC2570A SI-N 25V 70mA 0.6W2SC2579 SI-N 160V 8A 80W 20MHz | 2SC2581 SI-N 200V 10A 100W2SC2590 SI-N 120V 0.5A 5W 250MHz | 2SC2592 SI-N 180V1A 20W 250MHz2SC2603 SI-N 50V 0.2A 0.3W | 2SC2610 SI-N 300V 0.1A 0.8W 80MHz2SC2611 SI-N 300V 0.1A 0.8W 80MHz | 2SC2621E SI-N 300V 0.2A 10W >50MHz2SC2625 SI-N 450V 10A 80W | 2SC2630 SI-N 35V 14A 100W 2SC2631 SI-N 150V 50mA 0,75W 160MHz | 2SC2632 SI-N 150V 50mA2SC2634 SI-N 60V 0.1A 0.4W 200MHz | 2SC2653 SI-N 350V 0.2A15W >50MHz2SC2654 SI-N 40V 7A 40W | 2SC2655 SI-N 50V 2A 0.9W 0.1us 2SC2656 SI-N 450V 7A 80W <1.5/4.5 | 2SC2660 SI-N 200V 2A 30W 30MHz2SC2668 SI-N 30V 20mA 0.1W 550MHz | 2SC2671 SI-N 15V 80mA 0.6W 5.5GHz2SC2682 SI-N 180V 0.1A 8W 180MHz | 2SC2690 SI-N 120V 1.2A20W 160MHz2SC2694 SI-N 35V 20A 140W | 2SC2705 SI-N 150V 50mA 0.8W 200MHz2SC2706 SI-N 140V 10A 100W 90MHz | 2SC2712 SI-N 50V 0.15A 0.15W 80MHz2SC2714 SI-N 30V 20mA 0.1W 550MHz | 2SC2717 SI-N 30V 50mA 0.3W 300MHz2SC2724 SI-N 30V 30mA 200MHz | 2SC2749 SI-N 500V 10A 100W 50MHz2SC2750 SI-N 150V 15A 100W POWER | 2SC2751 SI-N 500V 15A 120W 50MHz2SC2752 SI-N 500V 0.5A 10W <1/3.5 | 2SC2753 SI-N 17V0.07A0.3W 5GHz2SC2759 SI-N 30V 50mA 0.2W 2.3GHz | 2SC2786 SI-N 20V 20mA 600MHz2SC2787 SI-N 50V 30mA 0.3W 250MHz | 2SC2791 SI-N 900V 5A 100W2SC2792 SI-N 850V 2A 80W | 2SC2793 SI-N 900V 5A 100W 2SC2802 SI-N 300V 0.2A 10W 80MHz | 2SC2808 SI-N 100V 50mA 0.5W 140MHz2SC2810 SI-N 500V 7A 50W 18MHz | 2SC2812 SI-N 55V 0.15A0.2W 100MHz2SC2814 SI-N 30V 0.03A 320MHz F | 2SC2825 SI-N 80V 6A 70W B>5002SC2837 SI-N 150V 10A 100W 70MHz | 2SC2839 SI-N 20V 30mA 0.15W 320MHz2SC2851 SI-N 36V 0.3A 1W 1.5GHz | 2SC2873 SI-N 50V 2A 0.5W 120MHz2SC2878 SI-N 20V 0.3A 0.4W 30MHz | 2SC2879 SI-N 45V 25A PEP=100W 28MHz2SC2882 SI-N 90V 0.4A 0.5W 100MHz | 2SC288A SI-N 35V 20mA 0.15W2SC2898 SI-N 500V 8A 50W | 2SC2901 SI-N 40V 0.2A 0.6W <12/182SC2908 SI-N 200V 5A 50W 50MHz | 2SC2910 SI-N 160V 70mA 0.9W 150MHz2SC2911 SI-N 180V 140mA 10W 150MHz | 2SC2912 SI-N 200V140mA 10W 150MHz2SC2922 SI-N 180V 17A 200W 50MHz | 2SC2923 SI-N 300V0.1A 140MHz2SC2928 SI-N 1500V 5A 50W | 2SC2939 SI-N 500V 10A 100W 2.5us2SC2958 SI-N 160V 0.5A 1W | 2SC2979 SI-N 800V 3A 40W 2SC2987 SI-N 140V 12A 120W 60MHz | 2SC2988 SI-N 36V 0.5A 175MHz2SC2999 SI-N 20V 30mA 750MHz | 2SC3001 SI-N 20V 3APQ=7W(175MHz)2SC3019 SI-N 35V 0.4A 0.6W 520MHz | 2SC3020 SI-N 35V 1A 10W2SC3022 SI-N 35V 7A 50W | 2SC3026 SI-N 1700V 5A 50W POWER2SC3030 N-DARL 900V 7A 80W | 2SC3039 SI-N 500V 7A 52W 2SC3042 SI-N 500/400V 12A 100W | 2SC3052F SI-N 50V 0.2A0.15W 200MHz2SC3063 SI-N 300V 0.1A 1.2W 140MHz | 2SC3067 2xSI-N 130V50mA 0.5W 1602SC3068 SI-N 30V 0.3A Ueb=15V B>8 | 2SC3071 SI-N 120V 0.2A Ueb=15V B>2SC3073 SI-N 30V 3A 15W 100MHz | 2SC3074 SI-N 60V 5A 20W 120MHz2SC3075 SI-N 500V 0.8A 10W 1/1.5us | 2SC3089 SI-N 800V 7A 80W2SC3101 SI-N 250V 30A 200W 25MHz | 2SC3102 SI-N 35V 18A 170W 520MHz2SC3112 SI-N 50V 0.15A 0.4W 100MHz | 2SC3116 SI-N 180V 0.7A 10W 120MHz2SC3117 SI-N 180V 1.5A 10W 120MHz | 2SC3133 SI-N 60V 6A 1.5W27MHz2SC3148 SI-N 900V 3A 40W 1us | 2SC3150 SI-N 900V 3A 50W 15MHz2SC3153 SI-N 900V 6A 100W | 2SC3157 SI-N 150V 10A 60W 2SC3158 SI-N 500V 7A 60W | 2SC3164 SI-N 500V 10A 100W 2SC3169 SI-N 500V 2A 25W >8MHz | 2SC3175 SI-N 400V 7A 50W 40MHz2SC3178 SI-N 1200V 2A 60W | 2SC3179 SI-N 60V 4A 30W15MHz2SC3180N SI-N 80V 6A 60W 30MHz | 2SC3181N SI-N 120V 8A 80W 30MHz2SC3182N SI-N 140V 10A 100W 30MHz | 2SC3195 SI-N 30V 20mA 0.1W 550MHz2SC3199 SI-N 60V 0.15A 0.2W 130MHz | 2SC3200 SI-N 120V 0.1A 0.3W 100MHz2SC3202 SI-N 35V 0.5A 0.5W 300MHz | 2SC3203 SI-N 35V 0.8A0.6W 120MHz2SC3205 SI-N 30V 2A 1W 120MHz2SC4544参数：Si-NPN 300V 0.1A 8W 70MHz| 2SC3206 SI-N 150V 0.5A 0.8W 120MHz2SC3210 SI-N 500V 10A 100W 1us | 2SC3211 SI-N 800V 5A 70W >3MHz2SC3212 SI-N 800V 7A 3W 3.5MHz | 2SC3225 SI-N 40V 2A 0.9W 1us2SC3231 SI-N 200V 4A 40W 8MHz | 2SC3240 SI-N 50V 25A 110W 30MHz2SC3242 SI-N 20V 2A 0.9W 80MHz | 2SC3244E SI-N 100V 0.5A 0.9W 130MHz2SC3245A SI-N 150V 0.1A 0.9W 200MHz | 2SC3246 SI-N 30V1.5A 0.9W 130MHz2SC3247 SI-N 50V 1A .9W 130MHz B> | 2SC3257 SI-N 250V 10A40W 1/3.5us2SC3258 SI-N 100V 5A 30W 120MHz | 2SC3260 N-DARL 800V 3A 50W B>102SC3262 N-DARL 800V 10A 100W | 2SC3263 SI-N 230V 15A 130W2SC3264 SI-N 230V 17A 200W 60MHz | 2SC3271 SI-N 300V 1A 5W 80MHz2SC3277 SI-N 500V 10A 90W 20MHz | 2SC3279 SI-N 10V 2A 0.75W 150MHz2SC3280 SI-N 160V 12A 120W 30MHz | 2SC3281 SI-N 200V 15A 150W 30MHz2SC3284 SI-N 150V 14A 125W 60MHz | 2SC3293 N-DARL+D 50V 1.2A 20W 1802SC3297 SI-N 30V 3A 15W 100MHz | 2SC3299 SI-N 60V 5A 20W 0.1us2SC3300 SI-N 100V 15A 100W | 2SC3303 SI-N 100V 5A 20W 0.2us2SC3306 SI-N 500V 10A 100W 1us | 2SC3307 SI-N 900V 10A 150W 1us2SC3309 SI-N 500V 2A 20W 1us | 2SC3310 SI-N 500V 5A 30W1us2SC3311 SI-N 60V 0.1A 0.3W 150MHz | 2SC3320 SI-N 500V 15A80W2SC3326 SI-N 20V 0.3A 0.15W 30MHz | 2SC3327 SI-N 50V 0.3A0.2W 30MHz2SC3328 SI-N 80V 2A 0.9W 100MHz | 2SC3330 SI-N 60V 0.2A 0.3W 200MHz2SC3331 SI-N 60V 0.2A 0.5W 200MHz | 2SC3332 SI-N 180V 0.7A 0.7W 120MHz2SC3334 SI-N 250V 50mA 0.9W 100MHz | 2SC3345 SI-N 60V 12A40W 90MHz2SC3346 SI-N 80V 12A 40W 0.2us | 2SC3355 SI-N 20V 0.1A 0.6W 6.5GHz2SC3356 SI-N 20V 0.1A 0.2W 7GHz | 2SC3377 SI-N 40V 1A 0.6W 150MHz2SC3378 SI-N 120V 0.1A 0.2W 100MHz | 2SC3379 SI-N 20V 1.5APQ=3W2SC3381 2xSI-N 80V 0.1A 0.4W 170MHz | 2SC3383 SI-N 60V 0.2A 0.5W 250MHz2SC3397 SI-N 50V 0.1A 250MHz 46K/ | 2SC3399 SI-N 50V 0.1A250MHz2SC3400 SI-N 50V 0.1A 250MHz 22K/ | 2SC3401 SI-N 50V .1A 46K/23KOHM2SC3402 SI-N 50V 0.1A 250MHz 10K/ | 2SC3405 SI-N 900V 0.8A20W 1us2SC3409 SI-N 900V 2A 80W .8uS | 2SC3416 SI-N 200V 0.1A 5W 70MHz2SC3419 SI-N 40V 0.8A 5W 100MHz | 2SC3420 SI-N 50V 5A 10W 100MHz2SC3421O SI-N 120V 1A 1.5W BJT O-G | 2SC3421Y SI-N 120V1A10W 120MHz2SC3422Y SI-N 40V 3A 10W 100MHz | 2SC3423 SI-N 150V 50mA 5W 200MHz2SC3425 SI-N 500V 0.8A 10W | 2SC3446 SI-N 800V 7A 40W 18MHz2SC3447 SI-N 800V 5A 50W 18MHz | 2SC3456 SI-N 1100/800V 1.5A 40W2SC3457 SI-N 1100V 3A 50W | 2SC3460 SI-N 1100V 6A 100W 2SC3461 SI-N 1100/800V 8A 120W | 2SC3466 SI-N 1200/650V 8A 120W2SC3467 SI-N 200V 0.1A 1W 150MHz | 2SC3468 SI-N 300V 0.1A 1W 150MHz2SC3486 SI-N 1500V 6A 120W | 2SC3502 SI-N 200V 0.1A 1.2W2SC3503 SI-N 300V 0.1A 7W 150MHz | 2SC3504 SI-N 70V 0.05A 0.9W 500MHz2SC3505 SI-N 900V 6A 80W | 2SC3507 SI-N 1000/800V 5A 80W2SC3509 N-DARL+D 900V 10A 100W 0. | 2SC3514 SI-N 180V 0.1A 10W 200MHz2SC3518 SI-N 60V 5A 10W | 2SC3520 SI-N 500V 18A 130W 18MHz2SC3526 SI-N 110V 0.15A 7A 30W 1us | 2SC3528 SI-N 500V 20A 125W2SC3549 SI-N 900V 3A 40W | 2SC3552 SI-N 1100V 12A 150W 15MHz2SC3568 SI-N 150V 10A 30W | 2SC3571 SI-N 500V 7A 30W 2SC3577 SI-N 850V 5A 80W 6MHz | 2SC3581 SI-N 55V 0.4A 0.9W 150MHz2SC3591 SI-N 400V 7A 50W | 2SC3595 SI-N 30V 0.5A 5W2SC3596 SI-N 80V 0.3A 8W 700MHz | 2SC3597 SI-N 80V 0.5A 10W 800MHz2SC3599 SI-N 120V 0.3A 8W 500MHz | 2SC3600 SI-N 200V 0.1A 7W 400MHz2SC3601 SI-N 200V 0.15A 7W 400MHz | 2SC3608 SI-N 20V 0.08A 6.5GHz2SC3611 SI-N 50V 0.15A 4W 300MHz | 2SC3616 SI-N 25V 0.7A250MHz2SC3621 SI-N 150V 1.5A 10W 100MHz | 2SC3623 SI-N 60V 0.15A 0.25W B=1K2SC3632 SI-N 600V 1A 10W 30MHz | 2SC3636 SI-N 900/500V 7A 80W2SC3642 SI-N 1200V 6A 100W 200ns | 2SC3655 SI-N 50V 0.1A0.4W 46/23K2SC3656 SI-N 50V 0.1A 0.4W 10K/10 | 2SC3659 SI-N+D 1700/800V 5A 50W2SC3668 SI-N 50V 2A 1W 100MHz | 2SC3669 SI-N 80V 2A 1W 0.2us2SC3675 SI-N 1500/900V 0.1A 10W | 2SC3678 SI-N 900V 3A 80W2SC3679 SI-N 900/800V 5A 100W | 2SC3680 SI-N 900/800V 7A 120W 6MHz2SC3684 SI-N+D 1500V 10A 150W | 2SC3688 SI-N 1500V 10A 150W 0.2us2SC3692 SI-N 100V 7A 30W <300/180 | 2SC373 SI-N 35V 0.1A 0.2W B>2002SC3746 SI-N 80V 5A 20W 100MHz | 2SC3748 SI-N 80V 10A30W 100/600ns2SC3752 SI-N 1100/800V 3A 30W | 2SC3781 SI-N 120V 0.4A 15W 500MHz2SC3782 SI-N 200V 0.2A 15W 400MHz | 2SC3783 SI-N 800V 5A100W2SC3787 SI-N 180V 0.14A 10W 150MHz | 2SC3788 SI-N 200V 0.1A 5W 150MHz2SC3789 SI-N 300V 0.1A 7W 70MHz | 2SC3790 SI-N 300V 0.1A 7W 150MHz2SC3792 SI-N 50V 0.5A 0.5W 250MHz | 2SC3795A SI-N 900V 5A2SC3807 SI-N 30V 2A 15W 260MHz | 2SC3808 N-DARL 80V 2A 170MHz B>802SC380TM SI-N 30V 50mA 0.3W 100MHz | 2SC3811 SI-N 40V 0.1A 0.4W 450MHz2SC3831 SI-N 500V 10A 100W | 2SC3833 SI-N 500/400V 12A 100W2SC3842 SI-N 600V 10A 70W 32MHz | 2SC3844 SI-N 600V 15A75W 30MHz2SC3851 SI-N 80V 4A 25W 15MHz | 2SC3852 SI-N 80V 3A 25W 15MHz2SC3855 SI-N 200V 10A 100W 20MHz | 2SC3857 SI-N 200V 15A 150W 20MHz2SC3858 SI-N 200V 17A 200W 20MHz | 2SC3866 SI-N 900V 3A 40W2SC3868 SI-N 500V 1.5A 25W 0.7us | 2SC3883 SI-N+D 1500V 6A 50W2SC3884A SI-N 1500V 6A 50W | 2SC3886A SI-N 1500V 8A50W 0.1us2SC388A SI-N 25V 50mA 0.3W 300MHz | 2SC3890 SI-N 500V 7A30W 500NS2SC3892A SI-N+D 1500V 7A 50W 0.4us | 2SC3893A SI-N+D 1500V8A 50W2SC3895 SI-N 1500/800V 8A 70W | 2SC3896 SI-N 1500V 8A 70W2SC3897 SI-N 1500V 10A 70W | 2SC3902 SI-N 180V 1.5A 10W 120MHz2SC3907 SI-N 180V 12A 130W 30MHz | 2SC3927 SI-N 900V 10A 120W2SC394 SI-N 25V 0.1A 200MC RF | 2SC3940 SI-N 30V 1A 1W 200MHz2SC3943 SI-N 110V 0.15A 2W 300MHz | 2SC3944 SI-N 150V 1A 40W 300MHz2SC3948 SI-N 850V 10A 75W 20MHz | 2SC3950 SI-N 30V 0.5A 5W2SC3952 SI-N 80V 0.5A 10W 700MHz | 2SC3953 SI-N 120V 0.2A 8W 400MHz2SC3954 SI-N 120V 0.3A 8W 400MHz | 2SC3955 SI-N 200V 0.1A 7W 300MHz2SC3956 SI-N 200V 0.2A 7W 70MHz | 2SC3964 SI-N 40V 2A 1.5W2SC3972 SI-N 800/500V 5A 40W | 2SC3973A SI-N 900V 7A 45W2SC3979A SI-N 800V 3A 2W 10MHz | 2SC3987 N-DARL+D 50V 3A 15W2SC3996 SI-N 1500/800V 15A 180W | 2SC3998 SI-N 1500V25A 250W POWER2SC3999 SI-N 300V 0.1A 0.75W 300MHz | 2SC4004 SI-N 900/800V 1A 30W <1/42SC4020 SI-N 900V 3A 50W 1us | 2SC4024 SI-N 100V 10A 35W B>3002SC4029 SI-N 230V 15A 150W 30MHz | 2SC4043 SI-N 20V 50mA 0.15W 3.2GHz2SC4046 SI-N 120V 0.2A 8W 350MHz | 2SC4052 SI-N 600V 3A 40W 20MHz2SC4056 SI-N 600V 8A 45W | 2SC4059 SI-N 600/450V 15A 130W2SC4064 SI-N 50V 12A 35W 40MHz | 2SC4107 SI-N 500/400V 10A 60W2SC4119 N-DARL+D 1500V 15A 250W B | 2SC4123 SI-N+D 1500V 7A 60W2SC4125 SI-N+D 1500/800V 10A 70W | 2SC4131 SI-N 100V 15A60W 18MHz2SC4135 SI-N 120V 2A 15W 200MHz | 2SC4137 SI-N 25V 0.1A300MHz2SC4138 SI-N 500V 10A 80W <1/3.5us | 2SC4153 SI-N 200V 7A 30W 0.5us2SC4157 SI-N 600V 10A 100W | 2SC4159 SI-N 180V 1.5A 15W 100MHz2SC4161 SI-N 500V 7A 30W | 2SC4169 N-DARL+D 50V 1.2A 1W B=4K2SC4199 SI-N 1400V 10A 100W | 2SC4200 SI-N 20V 0.6A 5W 2.5GHz2SC4204 SI-N 30V 0.7A 0.6W | 2SC4231 SI-N 1200/800V 2A30W2SC4235 SI-N 1200/800V 3A 80W | 2SC4236 SI-N 1200/800V 6A 100W2SC4237 SI-N 1200/800V 10A 150W | 2SC4242 SI-N 450/400V 7A2SC4256 SI-N 1500V 10A 175W 6MHz | 2SC4278 SI-N 150V 10A 100W 30MHz2SC4288A SI-N1600/600V 12A 200W | 2SC4289A SI-N 1500V 16A 200W2SC4290A SI-N 1500V 20A 200W | 2SC4297 SI-N 500V 12A 75W 10MHz2SC4298 SI-N 500V 15A 80W 10MHz | 2SC4300 SI-N 900V 5A 75W 1/6us2SC4304 SI-N 800V 3A 35W | 2SC4308 SI-N 30V 0.3A 0.6W 2.5GHz2SC4313 SI-N 900V 10A 100W 0.5us | 2SC4381 SI-N 150V 2A 25W 15MHz2SC4382 SI-N 200V 2A 25W 15MHz | 2SC4386 SI-N 160/120V 8A 75W 20MHz2SC4387 SI-N 200V 10A 80W 20MHz | 2SC4388 SI-N 200V 15A85W 20MHz2SC4408 SI-N 80V 2A 0.9W 100/600ns | 2SC4429 SI-N 1100/800V 8A 60W2SC4430 SI-N 1100V 12A 65W 15MHz | 2SC4431 SI-N 120V 1.5A 20W 150MHz2SC4439 SI-N 180V 0.3A 8W 400MHz | 2SC4467 SI-N 160/120V 8A 80W 20MHz2SC4468 SI-N 200V 10A 80W 20MHz | 2SC4484 SI-N 30V 2.5A 1W 250MHz2SC4488 SI-N 120V 1A 1W 120MHz | 2SC4511 SI-N 120V 6A 30W 20MHz2SC4512 SI-N 120V 6A 50W 20MHz | 2SC4517 SI-N 900V 3A 30W 6MHz2SC4517A SI-N 1000V 3A 30W 0.5us | 2SC4531 SI-N+D 1500V 10A 50W2SC4532 SI-N 1700V 10A 200W 2uS | 2SC4538 SI-N 900V 5A 80W2SC454 SI-N 30V 0.1A 230MHz | 2SC4542 SI-N 1500V 10A 50W2SC4547 N-DARL+D 85V 3A 30W B>2K | 2SC4557 SI-N 900V 10A 80W <1/5.5us2SC4560 SI-N 1500V 10A 80W | 2SC458 SI-N 30V 0.1A 230MC UNI0.2W 230MHz2SC461 SI-N 30V 0.1A 0.2W 230MHz | 2SC4744 SI-N 1500V 6A POWER2SC4745 SI-N 1500V 6A | 2SC4747 SI-N 1500V 10A 50W0.3us2SC4758 SI-N 1500V 8A 50W HI-RES | 2SC4769 SI-N+D 1500V 7A 60W2SC4770 SI-N 1500/800V 7A 60W | 2SC4793 SI-N 230V 1A 2W 100MHz2SC4804 SI-N 900V 3A 30W 0.3us | 2SC4820 SI-N 450V 6A 30W 12MHz2SC4826 SI-N 200V 3A 1.3W 300MHz | 2SC4834 SI-N 500V 8A 45W <0.3/1.42SC4883A SI-N 180V 2A 20W 120MHz | 2SC4891 SI-N 1500V 15A 75W2SC4908 SI-N 900V 3A 35W 1us | 2SC4924 SI-N 800V 10A70W2SC4977 SI-N 450V 7A 40W | 2SC5002 SI-N 1500V 7A 80W 2SC5003 SI-N+D 1500V 7A 80W | 2SC5027 SI-N 1100V 3A 50W 0.3us2SC5030 SI-N 50V 5A 1.3W 150MHz | 2SC5045 SI-N 1600V 15A75W2SC5047 SI-N 1600V 25A 250W | 2SC5048 SI-N 1500V 12A 50W 0.3us2SC5070 SI-N 30V 2A 1.5W B>800 | 2SC5086 SI-N 20V 80MA 7GHZ2SC509 SI-N 35V 0.5A 0.6W 60MHz | 2SC5144 SI-N 1700V 20A 200W2SC5148 SI-N 1500V 8A 50W 0.2us | 2SC5149 SI-N+D 1500V 8A 50W 0.2us2SC5150 SI-N 1700V 10A 50W 03us | 2SC5171 SI-N 180V 2A 20W 200MHz2SC5198 SI-N 140V 10A 100W 30MHz | 2SC5207 SI-N 1500V 10A 50W 0.4us2SC5242 SI-N 230V 15A 130W 30MHz | 2SC5244A SI-N 1600V 30A 200W2SC5296 SI-N+D 1500V 8A 60W | 2SC5297 SI-N 1500V 8A 60W0.1W 0.700M2SC536 SI-N 40V 0.1A 180MC UNI | 2SC620 SI-N 50V 0.2A 0.25W UNI2SC643 SI-N 1100V 2.5A 50W | 2SC644 SI-N 30V 50mA 0.25W2SC645 SI-N 30V 30mA 0.14W 200MHz | 2SC710 SI-N 30V 0.03A 200MHz2SC711 SI-N 30V 0.05A 150MHz | 2SC712 SI-N 30V 0.5A150MHz2SC717 SI-N 30V 50mA 0.2W 600MHz | 2SC730 SI-N 40V 0.4APQ=1.5W2SC732 SI-N 50V 0.15A 0.4W 150MHz | 2SC735 SI-N 35V 0.4A 0.3W UNI2SC752 SI-N 15V 100mA 0.1W | 2SC756 SI-N 40V 4A 10W65MHz2SC784 SI-N 40V 0.02A 500MC RF | 2SC815 SI-N 60V 0.2A 0.25W 200MHz2SC828 SI-N 30V 0.05A 0.25W UNI | 2SC829 SI-N 30V 30mA 0.4W 230MHz2SC839 SI-N 50V 0.03A 250MHz | 2SC867 SI-N 400V 1A 23W 8MHz2SC869 SI-N 160V 30mA 0.2W 150MHz | 2SC898A SI-N 150V 7A80W 15MHz2SC900 SI-N 30V 0.03A 100MHz | 2SC930 SI-N 15V 0.03A300MC RF2SC936 SI-N 1000V 1A 22W POWER | 2SC941 SI-N 35V 20mA 0.2W 120MHz2SC943 SI-N 60V 0.2A 0.3W 220MHz | 2SC945 SI-N 50V 0.1A 250MC UNI2SC982 N-DARL 40V 0.3A 0.4W。

2SC5423资料

12Request for your special attention and precautions in using the technical information andsemiconductors described in this book(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws andregulations of the exporting country, especially, those with regard to security export control, must be observed. (2)The technical information described in this book is intended only to show the main characteristics and application circuit examplesof the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book.(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as officeequipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-ucts may directly jeopardize life or harm the human body.– Any applications other than the standard applications intended.(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment.Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of MatsushitaElectric Industrial Co., Ltd.M a i n t e n a n D i s c o n t i n u eP le a s ev i s it f o l l o w i n g U R L a b o u t l a t e s t i n fo r mh t t p ://p a n a s o n i c .n e t /s c /e n。

2SC3356中文资料(RENESAS)中文数据手册「EasyDatasheet - 矽搜」

芯片中文手册,看全文,戳
2SC3356
电气特性（T
参数直流特性集电极截止电流发射极截止电流
DC电流增益
射频特性增益带宽产品插入功率增益噪声系数反向传输电容
A = +25°C)
符号
测试条件
ICBO IE B O h Note 1
FE
VCB = 10 V, I E = 0 mA时 VEB = 1.0 V, I C = 0 mA时 VCE = 10 V, I C 能力= 20 mA
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50 100
15 (dB)
2
|21e 10
插入功率增益主场迎战集电极电流
VCE = 10 V F = 1 GHz的