MIG50Q6CSB1X中文资料

TOSHIBA Intelligent Power Module Silicon N Channel IGBTMIG50Q6CSB1X (1200V/50A 6in1)High Power Switching ApplicationsMotor Control Applications· Integrates inverter and control circuits (IGBT drive units, protection units for short-circuit current, over current, under voltage and over temperature) in one package.· The electrodes are isolated from case.· V CE (sat) = 2.2 V (typ.)· UL recognized: File No. E87989Equivalent Circuit1. V D (U)2. FO (U)3. IN (U)4.GND (U)5.V D (V)6.FO (V)7. IN (V)(V) 9. V D (W) 10. FO (W)11.IN (W)12.GND (W)13.V D (L) 14. FO (L)8. GND(L)(Z) 20.GND15. Open 16. Open 17. IN(X) 18.IN(Y) 19.INPackage Dimensions: TOSHIBA 2-108G1DUnit: mm1. V D (U)2. FO (U)3.IN (U)4.GND (U)5.V D (V)6. FO (V)7. IN (V) 8. GND (V) 9.V D (W)10.FO (W)11.IN (W)12. GND (W)13. V D (L) 14. FO (L) 15.Open 16.Open 17.IN (X) 18. IN (Y)(L)GND19.IN(Z)20.Signal Terminal LayoutUnit: mm1. V D (U)2. FO (U)3.IN (U)4.GND (U)5.V D (V)6. FO (V)7. IN (V) 8. GND (V) 9.V D (W)10.FO (W)11.IN (W)12. GND (W)13. V D (L) 14. FO (L) 15.Open 16.Open 17.IN (X) 18. IN (Y)(L)GND19.IN(Z)20.Maximum Ratings (unless otherwise specified, T j = 25°C)Stage CharacteristicCondition Symbol Ratings UnitSupply voltageP-N power terminalV CC 900 V Collector-emitter voltage¾V CES 1200 V Collector current Tc = 25°C, DC I C 50 A Forward currentTc = 25°C, DC I F 50ACollector power dissipation Tc = 25°CP C 580 W InverterJunction temperature ¾T j 150°C Control supply voltageV D -GND terminal V D 20 V Input voltage IN-GND terminal V IN 20 V Fault output voltage FO-GND terminal V FO 20 V ControlFault output current FO sink currentI FO 14 mA Operating temperature ¾ Tc -20 to 100°C Storage temperature range¾T stg-40 to 125°CIsolation voltage AC 1 minute V ISO 2500 V Screw torque (terminal) M4 ¾ 2 N·m ModuleScrew torque (mounting)M5¾ 3 N·mElectrical Characteristics1. Inverter StageCharacteristic Symbol Test Condition Min Typ. Max UnitT j = 25°C ¾ ¾ 1Collector cut-off currentI CEXV CE = 1200 V T j = 125°C ¾¾ 10mAT j = 25°C ¾ 2.2 2.6 Collector-emitter saturation voltage V CE (sat) V D = 15 V,I C = 50 A,V IN = 15 V ® 0 VT j = 125°C¾¾ 3.0V Forward voltageV F I F = 50 A, T j = 25°C¾ 2.4 2.8 Vt on ¾2.03.0 t c (on)¾ 0.3 ¾ t rr ¾ 0.3¾t off ¾ 1.5 2.5 Switching timet c (off)V CC = 600 V, I C = 50 A,V D = 15 V, V IN = 15 V « 0 V, T j = 25°C, Inductive load(Note 1)¾0.4¾m sNote 1: Switching time test circuit and timing chart.2. Control Stage (T j = 25°C)Characteristic Symbol Test Condition Min Typ. Max UnitHigh side I D (H) ¾ 13 17Control circuit current Low sideI D (L) V D = 15 V ¾39 51mAInput-on signal voltage V IN (on) V D = 15 V 1.4 1.6 1.8 V Input-off signal voltage V IN (off)V D = 15 V 2.2 2.5 2.8 V Protection I FO (on) 8 10 12Fault output current Normal I FO (off)V D = 15 V¾¾ 0.1mAOver currentprotection trip level Inverter OC V D = 15 V, T j <=125°C 80 ¾ ¾ A Short-circuit current protection trip level Inverter SC V D = 15 V, T j <=125°C 80¾ ¾ A Over current cut-off time t off (OC) V D = 15 V ¾ 5 ¾ m s Trip level OT 110 118 125Over temperature protectionReset level OTr Case temperature¾ 98 ¾ °CTrip level UV 11.0 12.0 12.5Control supply under voltage protection Reset level UVr ¾12.0 12.5 13.0VFault output pulse widtht FOV D = 15 V1 2 3 ms3. Thermal Resistance (Tc = 25°C)Characteristic Symbol Test Condition Min Typ. Max UnitInverter IGBT stage ¾ ¾ 0.215Junction to case thermal resistance R th (j-c)Inverter FRD stage¾¾0.464°C/WCase to fin thermal resistanceR th (c-f) Compound is applied¾ 0.017 ¾ °C/WSwitching Time Test CircuitTiming ChartInput PulseV IN WaveformI C WaveformV CE WaveformIntelligent power moduleCC4. Recommended conditions for applicationCharacteristic Symbol Test Condition Min Typ. MaxUnitSupply voltage V CC P-N Power terminal ¾ 600 800V Control supply voltage V DV D -GND Signal terminal13.5 1516.5VCarrier frequency fc PWM Control ¾ ¾ 20 kHz Dead timetdeadSwitching time test circuit(see page.6) (Note 2)3¾¾m sNote 2: The table lists Dead time requirements for the module input, excluding photocoupler delays. Whenspecifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above.Dead Time Timing Chart15 VV IN WaveformV IN Waveform15 V52 134 I C – V CEI C – V CESwitching time – I CSwitching time – I CI F – V Ftrr, Irr – I FCollector-emitter voltage V CE (V)Collector-emitter voltage V CE (V)Collector current I C (A)Collector current I C (A)Forward voltage V F (V)Forward current I F (A)C o l l e c t o r c u r r e n t I C (A )C o l l e c t o r c u r r e n t I C (A )S w i t c h i n g t i m e (m s )S w i t c h i n g t i m e (m s )P e a k r e v e r s e r e c o v e r y c u r r e n t I r r (A ) R e v e r s e r e c o v e r y t i m e t r r (´10 n S )F o r w a r d c u r r e n t I F (A )5213420 40 6010 30502040 6010305052 134 02040 60105030OC – TcI D (H) – fcI D (L) – fcReverse bias SOAR th (t) – tw Inverter stageCase temperature Tc (°C)Carrier frequency fc (kHz)Carrier frequency fc (kHz)Collector-emitter voltage V CE (V)Pulse width tw (s)H i g h s i d e c o n t r o l c i r c u i t c u r r e n t I D (H ) (m A )O v e r c u r r e n t p r o t e c t i o n t r i p l e v e l O C (A )C o l l e c t o r c u r r e n t I C (A )L o w s i d e c o n t r o l c i r c u i t c u r r e n t I D (L ) (m A )T r a n s i e n t t h e r m a l r e s i s t a n c e R t h (t )/(°C /W )100.001 0.01 0.11 255 1015 20 1400200400600800 1000 1200 15025 50 75100 125 255 10 15 2020 40 6010 3050Turn on loss – I CTurn off loss – I CCollector current I C (A)Collector current I C (A)T u r n o f f l o s s E o f f (m J )T u r n o n l o s s E o n (m J )1040 605030102003-02-19 11· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.· The information contained herein is subject to change without notice.000707EAA RESTRICTIONS ON PRODUCT USE 元器件交易网。