1AM-3904 SOT-23

JIANGSU CHANGJ CHANGJI I ANG EL ELE
E C TRONICS TECHNOLOGY CO.,L TD DONGGUAN FU YAT ELECTRONICS CO LTD-86-769-85388861
SO SOT T -23Plastic-Enca Plastic-Encap
p sulate Transistors MMBT390MMBT3904
4TRANSISTOR (NPN)
FE FEA
A TURES �As complementary type the PNP transistor MMBT3906is recommended �Epitaxial planar die construction MARKING:1AM
MAXIMUM R A TINGS (T A =2=255℃unless othe other
r w i s e noted)SO SOT
T -231.BASE 2.EMITTER 3.COLLECTOR
Symbol Par Para a met mete
e r V a lue Uni Unit t s V CBO Collector-Base Voltage
60V V CEO Collector-Emitter Voltage 40V V EBO Emitter-Base Voltage 6V I C Collector Current -Continuous 200mA P C Total Device Dissipation
200mW R θJA Thermal Resistance Junction to Ambient 625℃/W T J Junction Temperature 150℃T stg
Storage Temperature
-55to +150
℃
ELECTRICAL CHAR CHARA A CTERISTICS (T amb=25℃unless othe other
r w i s e specified)Par Para a met mete
e r Symbol T est
conditions
MIN M A X
UNIT Collector-base breakd breakdo
o w n v o l t age V CBO I C =10μA,I E =060V Collector-emitter b r eak eakdo do dow w n v ol olt
t age V CEO I C =1mA,I B =040V Emitter-b Emitter-ba a s e breakd breakdo o w n v o l t age V EBO I E =10μA,I C =06
V Collector cut-off current I CBO V CB =60V,I E =00.1μA Collector cut-off current I CEX V CE =30V,V BE(off)=3V 50nA Emitter cut-off
current
I EBO V EB =5V,I C =00.1μA
DC cur curr
r ent g a in h FE(1)
V CE =1V,I C =10mA 100400h FE(2)V CE =1V,I C =50mA 60h FE(3)
V CE =1V,I C =100mA 30
Collector-emitter satu satur r ation v o l t age V CE(sat)I C =50mA,I B =5mA 0.3V Ba Bas s e -emitt -emitte e r saturation v ol olt t age V BE(sat)
I C =50mA,I B =5mA
0.95
V T r a n s ition fr fre e qu que e n c y f T V CE =20V,I C =10mA,f=100MHz 300
MHz Del Dela a y T ime td V CC =3V,V BE =-0.5V I C =10mA,I B1=-I B2=1.0mA 35nS Rise T ime tr 35nS S torage T ime ts V CC =3V,I C =10mA,I B1=-I B2=1mA
200nS Fall T ime
tf
50
nS
CLASSIFIC CLASSIFICA
A TION OF h FE(1)Rank O Y G R a nge
100-200
200-300
300-400
T y pical Characteristics MMBT3904。