BZT55B3V3中文资料
GENERAL Semiconductor BZV55 SERIES 数据手册
♦Diodes available in these tolerance series:±2% BZV55-B, ±3% BZV55-F, ±5% BZV55-C.MECHANICAL DATACase: Mini-MELF Glass Case (SOD-80)Weight: approx. 0.05 gDimensions are in inches and (millimeters)Cathode band color: BlueMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSRatings at 25°C ambient temperature unless otherwise specified.SYMBOL VALUE UNIT Zener Current see Table “Characteristics”Power Dissipation at T flange= 50°C P tot500mW Power Dissipation at T A= 50°C P tot400 (1)mW Junction Temperature T j–65 to +200°C Storage Temperature Range T S–65 to +200°C Continuous Forward Current I F250mA Peak reverse power disipation (non-repetitive) tp=100µs P ZSM30 (2)WSYMBOL MIN.TYP.MAX.UNIT Thermal Resistance Junction to Ambient Air R thJA0.38(1)K/mW Thermal Resistance Junction to Lead R thJL0.30 K/mW Forward Voltage at I F= 10 mA V F0.9VNOTES:1) Mounted on ceramic substrate 10mm x 10mm x 0.6mm2) Tj = 150°C9/29/98(1) Valid provided that electrodes are kept at ambient temperature.BZV55-y2V4100600–0.08–0.06501BZV55-y2V7100600–0.08–0.06201BZV55-y3V095600–0.08–0.06101BZV55-y3V395600–0.08–0.0551BZV55-y3V690600–0.08–0.0451BZV55-y3V990600–0.07–0.0331BZV55-y4V390600–0.04–0.0131BZV55-y4V780500–0.03+0.0132BZV55-y5V160480–0.02+0.0522BZV55-y5V640400–0.01+0.0612BZV55-y6V2101500+0.0734BZV55-y6V81580+0.01+0.0824BZV55-y7V51580+0.01+0.0915BZV55-y8V21580+0.01+0.090.75BZV55-y9V115100+0.02+0.100.56BZV55-y1020150+0.03+0.110.27BZV55-y1120150+0.03+0.110.18BZV55-y1225150+0.03+0.110.18BZV55-y1330170+0.03+0.110.18BZV55-y1530200+0.03+0.110.0510BZV55-y1640200+0.03+0.110.0511BZV55-y1845225+0.03+0.110.0513BZV55-y2055225+0.03+0.110.0514BZV55-y2255250+0.03+0.110.0515BZV55-y2470250+0.04+0.120.0517BZV55-y2780(3)300(4)+0.04(3)+0.12 (3)0.0519BZV55-y3080(3)300(4)+0.04(3)+0.12 (3)0.0521BZV55-y3380(3)325(4)+0.04(3)+0.12 (3)0.0523BZV55-y3690(3)350(4)+0.043)+0.12 (3)0.0525BZV55-y39130(3)350(4)+0.04(3)+0.12 (3)0.0527BZV55-y43150(3)375(4)+0.04(3)+0.12 (3)0.0530BZV55-y47170(3)375(4)+0.04(3)+0.12 (3)0.0533BZV55-y51180(3)400(4)+0.04(3)+0.12 (3)0.0536BZV55-y56200(3)425(4)typ. +0.1(3)0.0539BZV55-y62215(3)450(4)typ. +0.1(3)0.0543BZV55-y68240(3)475(4)typ. +0.1(3)0.0548BZV55-y75255(3)500(4)typ. +0.1(3)0.0553(1) Tested with pulses tp = 5 ms.(2) Valid provided that electrodes are kept at ambient temperature. (3) at I Z = 2.0 mA (4) at I Z = 0.5 mAy = Zener voltage tolerance designatorType y=B for ±2%Vz y=F for ±3%Vz y=C for ±5%VzDynamic Resistanceat at I Z = 5 mA I Z = 1 mA f=1kHz f=1kHz r zj (Ω) r zj (Ω) max.max.Temp. coefficientof Zener Voltageat I Z = 5 mA αVZ (%/K)min.max.Reverse leakagecurrent at T amb = 25°Cat I R (µA)V R (V)(1) Valid provided that electrodes are kept at ambient temperature.(1) Tested with pulses tp = 5 ms. (3) I Z = 2 mASee BZV55-y table for all characteristics other than zener voltage range.TypeZener Voltage range(1)atI Z = 5 mA V Z V ±5% Tol.min.max.TypeZener Voltage range(1)atI Z = 5 mA V Z V ±3% Tol.min.max.TypeZener Voltage range(1)atI Z = 5 mA V Z V ±2% Tol.min.max.BZV55-C2V4 2.20 2.60BZV55-C2V7 2.50 2.90BZV55-C3V0 2.80 3.20BZV55-C3V3 3.10 3.50BZV55-C3V6 3.40 3.80BZV55-C3V9 3.70 4.10BZV55-C4V3 4.00 4.60BZV55-C4V7 4.40 5.00BZV55-C5V1 4.80 5.40BZV55-C5V6 5.20 6.00BZV55-C6V2 5.80 6.60BZV55-C6V8 6.407.20BZV55-C7V57.007.90BZV55-C8V27.708.70BZV55-C9V18.509.60BZV55-C109.4010.60BZV55-C1110.4011.60BZV55-C1211.4012.70BZV55-C1312.4014.10BZV55-C1513.8015.60BZV55-C1615.3017.10BZV55-C1816.8019.10BZV55-C2018.8021.20BZV55-C2220.8023.30BZV55-C2422.8025.60BZV55-C2725.1028.90(3)BZV55-C3028.0032.00(3)BZV55-C3331.0035.00(3)BZV55-C3634.0038.00(3)BZV55-C3937.0041.00(3)BZV55-C4340.0046.00(3)BZV55-C4744.0050.00(3)BZV55-C5148.0054.00(3)BZV55-C5652.0060.00(3)BZV55-C6258.0066.00(3)BZV55-C6864.0072.00(3)BZV55-C7570.0079.00(3)BZV55-F2V4 2.33 2.47BZV55-F2V7 2.62 2.78BZV55-F3V0 2.91 3.09BZV55-F3V3 3.20 3.40BZV55-F3V6 3.49 3.71BZV55-F3V9 3.78 4.02BZV55-F4V3 4.17 4.43BZV55-F4V7 4.56 4.84BZV55-F5V1 4.95 5.25BZV55-F5V6 5.43 5.77BZV55-F6V2 6.01 6.39BZV55-F6V8 6.607.00BZV55-F7V57.287.72BZV55-F8V27.958.45BZV55-F9V18.839.37BZV55-F109.7010.30BZV55-F1110.6711.33BZV55-F1211.6412.36BZV55-F1312.6113.39BZV55-F1514.5515.45BZV55-F1615.5016.50BZV55-F1817.5018.50BZV55-F2019.4020.60BZV55-F2221.3022.70BZV55-F2423.3024.70BZV55-F2726.2027.80(3)BZV55-F3029.1030.90(3)BZV55-F3332.0034.00(3)BZV55-F3634.9037.10(3)BZV55-F3937.8040.20(3)BZV55-F4341.7044.30(3)BZV55-F4745.6048.40(3)BZV55-F5149.5052.50(3)BZV55-F5654.3057.70(3)BZV55-F6260.1063.90(3)BZV55-F6866.0070.00(3)BZV55-F7572.8077.20(3)BZV55-B2V4 2.35 2.45BZV55-B2V7 2.65 2.75BZV55-B3V0 2.94 3.06BZV55-B3V3 3.23 3.37BZV55-B3V6 3.53 3.67BZV55-B3V9 3.82 3.98BZV55-B4V3 4.21 4.39BZV55-B4V7 4.61 4.79BZV55-B5V1 5.00 5.20BZV55-B5V6 5.49 5.71BZV55-B6V2 6.08 6.32BZV55-B6V8 6.66 6.94BZV55-B7V57.357.65BZV55-B8V28.048.36BZV55-B9V18.929.28BZV55-B109.8010.20BZV55-B1110.8011.20BZV55-B1211.8012.20BZV55-B1312.7013.30BZV55-B1514.7015.30BZV55-B1615.7016.30BZV55-B1817.6018.40BZV55-B2019.6020.40BZV55-B2221.6022.40BZV55-B2423.5024.50BZV55-B2726.5027.50(3)BZV55-B3029.4030.60(3)BZV55-B3332.3033.70(3)BZV55-B3635.3036.70(3)BZV55-B3938.2039.80(3)BZV55-B4342.1043.90(3)BZV55-B4746.1047.90(3)BZV55-B5150.0052.00(3)BZV55-B5654.9057.10(3)BZV55-B6260.8063.20(3)BZV55-B6866.6069.40(3)BZV55-B7573.5076.50(3)Copyright © Each Manufacturing Company.All Datasheets cannot be modified without permission.This datasheet has been download from :100% Free DataSheet Search Site.Free Download.No Register.Fast Search System.。
休闲裤贴袋机 Chino Pocket Setter （MB1002D-1-S7300A-305P）
休闲裤贴袋机Chino Pocket Setter （MB1002D-1-S7300A-305P）使用说明书Instruction Manual常州智谷机电科技有限公司CHANGZHOU WISDOM &VALLEY ELECTRICAL TECHNOLOGY CO.,LTD在使用本设备之前请先阅读本使用说明书Please read the operation manual of the touch screen interface before using the device 请将本使用说明书放在便于查阅的地方保管Please keep this operation manual of touch screen interface in convenient placeforreference2020.03版本信息/Version感谢购买IMB工业用缝纫机。
在使用此机器之前，请仔细阅读以下的说明，这样可以更好地帮到您了解此机器的相关操作。
这些说明是根据现行的条例明确阐述了正确的工作方法。
Thank you for purchasing this industrial sewing machine from IMBBefore using this automatic unit,please read the following instructions,which will help you tounderstand how the machine operates.These instructions illustrate the correct working methods to comply with current regulations.在没有得到IMB授权许可的前提下，此说明书的任何部分是不可以被复制或者转录的。
说明书的内容可能被修改，而不需预先通知。
No part of this manual may be copied or transcribed without requesting prior authorization from IMBThe contents of this manual may be subject to change without advance notification.我们将欣然接受各位提出的改进此说明书的任何建议和指示We are happy to receive suggestions and/or indications on ways we could improve this manual.本机介绍说明分为三部分，具体请参照《MB1002D休闲裤贴袋机-使用说明书》、《MB1002D休闲裤贴袋机-零件手册》、《MB1002D休闲裤贴袋机-触摸屏界面操作说明》。
yb3ybx3隔爆型三相异步电动机使用说明书diibt4
隔爆型三相异步电动机(Ex d IIB T1～T5 Gb机座号63～450 )使用说明书代号：南阳防爆集团股份有限公司2013年03月25日目录首先，感谢您选用我公司生产的高效率隔爆型三相异步电动机，在您使用该电动机之前，请您先仔细阅读这本《使用说明书》，它会告诉您如何正确操作、维护，使其更好的为您服务，并请您妥善保管好这本《使用说明书》，以便今后使用。
1、概述................................................................. 错误!未定义书签。
2、电动机型号及代表意义................................................. 错误!未定义书签。
3 、电动机的使用条件..................................................... 错误!未定义书签。
4、电动机的结构说明...................................................... 错误!未定义书签。
5、电动机防爆要点........................................................ 错误!未定义书签。
6、电动机的操作与使用要求................................................ 错误!未定义书签。
7、电动机的维护和修理.................................................... 错误!未定义书签。
8、动机常见故障及处理方法：.............................................. 错误!未定义书签。
9 、电动机的贮存、运输................................................... 错误!未定义书签。
ZH-WTXB使用说明书(3)
ZH-WTXB微机型铁磁谐振消除装置使用说明书保定市中恒合力电气有限公司BAODING ZHONGHENGHELI ELECTRIC CO.，LTD目录一、概述 (1)二、主要功能和技术参数 (1)三、装置的工作特点 (1)四、工作原理 (2)五、装置面板各元件的功能说明 (3)六、操作说明 (3)七、通讯说明 (5)八、装置的原理及后端子图 (8)九、安装 (8)十、端子接线图 (8)附图1 (10)ZH-WTXB微机型铁磁谐振消除装置一、概述电力系统中的铁磁谐振过电压是一种常见的内部过电压现象，在35KV以下中性点绝缘的电网中频繁发生。
这种过电压持续时间长，甚至能长时间自保持，因而对电力系统的安全运行威胁极大。
它是导致高压熔丝熔断、电磁式电压互感器烧损爆炸的重要原因，也是电力系统中某些重大事故的诱发原因之一。
ZH-WTXB微机型铁磁谐振消除装置是我公司科技人员在总结了十几年来国内各种消谐装置成功、失败的经验和教训之后，研制出的新一代铁磁谐振消除装置。
该装置在软硬件的设计上进行了重大改进，无需整定和调试，使消谐成功率大大提高。
二、主要功能和技术参数1、适用范围：35KV以下中性点不接地或经消弧线圈接地的小接地电流系统。
2、母线段数：1段。
3、消谐频率：三分频、二分频、基频、三次谐波或其它高次谐波。
4、动作频率范围（HZ）：三分频（14～18）、二分频（22～27）、基频（47～52）、三次谐波（145～162）、其它高次谐波（频率大于52的非三次谐波）。
5、动作电压（V）：三分频、二分频30±5，基频、三次谐波、其它高次谐波（频率大于52的非三次谐波）110±5。
以上启动值为缺省经验值,用户无需整定。
6、远动报警功能：谐振报警、过电压报警。
报警出口分别提供一对无源触点（触点容量为8A/250VAC、8A30VDC）在电压不超过250V，电流不超过0.5A，时间常数为5±0.75ms的直流回路中，装置输出触点的断开容量为40W。
B55SiCrV 高强度弹簧钢盘条-(BZJ 531-2009代替BZJ 531-2007)
1 范围本暂行供货技术条件规定了B55SiCrV 高强度弹簧钢盘条的尺寸、外形、重量及允许偏差、技术要求、检验与试验、包装、标志和检验文件等。
本暂行供货技术条件适用于宝山钢铁股份有限公司生产的供制造高强度弹簧钢丝用的无扭控冷热轧盘条。
2 规范性引用文件下列文件中的条款通过本暂行供货技术条件的引用而成为本暂行供货技术条件的条款。
凡是注日期的引用文件，其随后所有的修改单（不包括勘误的内容）或修订版均不适用于本暂行供货技术条件，然而，鼓励根据本暂行供货技术条件达成协议的各方研究是否可使用这些文件的最新版本。
凡是不注日期的引用文件，其最新版本适用于本暂行供货技术条件。
GB/T 222-2006 钢的成品化学成分允许偏差GB/T 223 钢铁及合金化学分析方法GB/T 224-2008 钢的脱碳层深度测定法GB/T 228-2002 金属材料室温拉伸试验方法GB/T 2975-1998 钢及钢产品力学性能试验取样位置及试样制备GB/T 4336-2002 碳素钢和中低合金钢火花源原子发射光谱分析方法（常规法）GB/T 6394-2002 金属平均晶粒度测定法GB/T 8170-2008 数值修约规则与极限数值的表示和判定GB/T 10561-2005 钢中非金属夹杂物含量的测定标准评级图显微检验法GB/T 13298-1991 金属显微组织检验方法GB/T 20066-2006 钢和铁化学成分测定用试样的取样和制样方法GB/T 20123-2006 钢铁总碳硫含量的测定高频感应炉燃烧后红外吸收法（常规方法）GB/T 20125-2006 低合金钢多元素含量的测定电感耦合等离子体原子发射光谱法GB/T 20126-2006 非合金钢低碳含量的测定第2 部分：感应炉（经预加热）内燃烧后红外吸收法。
BZT55-B4V7资料
507at a D l a c i n a h c e M se r u t a eF sc i t s i r e t c a r a h C l a m r e h Td n a s g n i t a R m u m i x a M (Tamb =25o C, unless otherwise specified) Very sharp reverse characteristic Low reverse current levelAvailable with tighter tolerances Very high stability Low noiseFor voltage stabilizationCase: QuadroMELF (SOD-80) Weight: approx. 0.034gse i r e S 55T Z B se d o i D r e n e Z Wm 005:n o i t a p i s s i D r e w o P st l o V 57o t 4.2:e g n a R e g a t l o V r e n e Z re t e m a r a P lo b m y S e u l a V t i n U )"s c i t s i r e t c a r a h C "e l b a T e e s (t n e r r u c r e n e Z I Z P t o t V /Z A m R t a n o i t a p i s s i d r e w o P A J h t <W /K 003P t o t 005Wm e r u t a r e p m e t n o i t c n u J T j 571oC e g n a r e r u t a r e p m e t e g a r o t S T g t s 571+o t 56-oCI t a e g a t l o v d r a w r o F F Am 002=V F 5.1V mm 6.1X m m 05X m m 05d r a o b C P n o t n e i b m a n o i t c n u J R θAJ 005W/K Package Dimensions in mm (inches)元器件交易网508sc i t s i r e t c a r a h C l a c i r t c e l E (T A =25o C unless otherwise noted)r e b m u n t r a P r o f C +V %5Z eg a t l o v r e n e Z )1V Z I @TZ )V (e c n a t s i s e r c i m a n y D t s e T tn e r r u c e r u t a r e p m e T t n e i c i f f e o c K T Z V )K /%(t s e T tn e r r u c t n e r r u c e g a k a e l e s r e v e R .n i M .x a M I t a T Z z H k 1=f r j z (Ω)I t a K Z z H k 1=f r j z (Ω)I T Z )A m (.n i M .x a M I K Z )A m (t a T b m a 52=o C I R (u )A t a T b m a 051=o C I R (u )A V t a R )s t l o V (4V 2C -55T Z B 82.265.258<006<590.0-60.0-105<001<17V 2C -55T Z B 05.209.258<006<590.0-60.0-101<05<10V 3C -55T Z B 08.202.309<006<580.0-50.0-14<04<13V 3C -55T Z B 01.305.309<006<580.0-50.0-12<04<16V 3C -55T Z B 04.308.309<006<580.0-50.0-12<04<19V 3C -55T Z B 07.301.409<006<560.0-30.0-12<04<13V 4C -55T Z B 00.406.409<006<550.0-20.0+11<02<17V 4C -55T Z B 04.400.508<006<520.0-20.0+15.0<01<11V 5C -55T Z B 08.404.506<055<550.0-50.0+11.0<2<16V 5C -55T Z B 02.500.604<054<530.0+60.0+11.0<2<12V 6C -55T Z B 08.506.601<002<530.0+70.0+11.0<2<28V 6C -55T Z B 04.602.78<051<530.0+70.0+11.0<2<35V 7C -55T Z B 00.709.77<05<530.0+80.0+11.0<2<52V 8C -55T Z B 07.707.87<05<530.0+90.0+11.0<2<2.61V 9C -55T Z B 05.806.901<05<530.0+1.0+11.0<2<8.601C -55T Z B 04.906.0151<07<530.0+11.0+11.0<2<5.711C -55T Z B 04.0106.1102<07<530.0+11.0+11.0<2<2.821C -55T Z B 04.1107.2102<09<530.0+11.0+11.0<2<1.931C -55T Z B 04.2101.4162<011<530.0+11.0+11.0<2<0151C -55T Z B 08.3106.5103<011<530.0+11.0+11.0<2<1161C -55T Z B 03.5101.7104<071<530.0+11.0+11.0<2<2181C -55T Z B 08.6101.9105<071<530.0+11.0+11.0<2<3102C -55T Z B 08.8102.1255<022<540.0+21.0+11.0<2<5122C -55T Z B 08.0203.3255<022<540.0+21.0+11.0<2<6142C -55T Z B 08.2206.5208<022<540.0+21.0+11.0<2<8172C -55T Z B 01.5209.8208<022<540.0+21.0+11.0<2<0203C -55T Z B 00.8200.2308<022<540.0+21.0+11.0<2<2233C -55T Z B 00.1300.5308<022<540.0+21.0+11.0<2<4263C -55T Z B 00.4300.8308<022<540.0+21.0+11.0<2<7293C -55T Z B 00.7300.1409<005<5.240.0+21.0+5.01.0<5<0334C -55T Z B 00.0400.6409<006<5.240.0+21.0+5.01.0<5<3374C -55T Z B 00.4400.05011<007<5.240.0+21.0+5.01.0<5<6315C -55T Z B 00.8400.45521<007<5.240.0+21.0+5.01.0<01<9365C -55T Z B 00.2500.06531<0001<5.240.0+21.0+5.01.0<01<3426C -55T Z B 00.8500.66051<0001<5.240.0+21.0+5.01.0<01<7486C -55T Z B 00.4600.27002<0001<5.240.0+21.0+5.01.0<01<1557C -55T Z B 00.0700.97052<0051<5.240.0+21.0+5.01.0<01<65Notes:1. t p < 10 ms, T/t p > 1000.*) Additionnal measurement of Voltage group 9V1 to 75 at 95 % V zmin < 35 nA at T j 25 o C元器件交易网509sc i t s i r e t c a r a h C l a c i r t c e l E (T A =25o C unless otherwise noted)r e b m u n t r a P r o f B +V %2Z eg a t l o v r e n e Z )1V Z I @TZ )V (e c n a t s i s e r c i m a n y D t s e T tn e r r u c e r u t a r e p m e T t n e i c i f f e o c K T Z V )K /%(t s e T tn e r r u c t n e r r u c e g a k a e l e s r e v e R .n i M .x a M I t a T Z z H k 1=f r j z (Ω)I t a K Z z H k 1=f r j z (Ω)I T Z )A m (.n i M .x a M I K Z )A m (t a T b m a 52=o C I R (u )A t a T b m a 051=o C I R (u )A V t a R )s t l o V (4V 2B -55T Z B 53.254.258<006<590.0-60.0-105<001<17V 2B -55T Z B 56.267.258<006<590.0-60.0-101<05<10V 3B -55T Z B 49.260.309<006<580.0-50.0-14<04<13V 3B -55T Z B 42.363.309<006<580.0-50.0-12<04<16V 3B -55T Z B 25.386.309<006<580.0-50.0-12<04<19V 3B -55T Z B 28.389.309<006<560.0-30.0-12<04<13V 4B -55T Z B 22.483.409<006<550.0-20.0+11<02<17V 4B -55T Z B 6.48.408<006<520.0-20.0+15.0<01<11V 5B -55T Z B 00.502.506<055<550.0-50.0+11.0<2<16V 5B -55T Z B 84.527.504<054<530.0+60.0+11.0<2<12V 6B -55T Z B 80.623.601<002<530.0+70.0+11.0<2<28V 6B -55T Z B 66.649.68<051<530.0+70.0+11.0<2<35V 7B -55T Z B 53.756.77<05<530.0+80.0+11.0<2<52V 8B -55T Z B 40.863.87<05<530.0+90.0+11.0<2<2.61V 9B -55T Z B 29.882.901<05<530.0+1.0+11.0<2<8.601B -55T Z B 08.902.0151<07<530.0+11.0+11.0<2<5.711B -55T Z B 87.0122.1102<07<530.0+11.0+11.0<2<2.821B -55T Z B 67.1142.2102<09<530.0+11.0+11.0<2<1.931B -55T Z B 47.2162.3162<011<530.0+11.0+11.0<2<0151B -55T Z B 07.4103.5103<011<530.0+11.0+11.0<2<1161B -55T Z B 07.5103.6104<071<530.0+11.0+11.0<2<2181B -55T Z B 46.7163.8105<071<530.0+11.0+11.0<2<3102B -55T Z B 06.9104.0255<022<540.0+21.0+11.0<2<5122B -55T Z B 55.1254.2255<022<540.0+21.0+11.0<2<6142B -55T Z B 05.3205.4208<022<540.0+21.0+11.0<2<8172B -55T Z B 04.6206.7208<022<540.0+21.0+11.0<2<0203B -55T Z B 04.9206.0308<022<540.0+21.0+11.0<2<2233B -55T Z B 04.2306.3308<022<540.0+21.0+11.0<2<4263B -55T Z B 03.5307.6308<022<540.0+21.0+11.0<2<7293B -55T Z B 02.8308.9309<005<5.240.0+21.0+11.0<5<0334B -55T Z B 01.2409.3409<006<5.240.0+21.0+5.01.0<5<3374B -55T Z B 01.6409.74011<007<5.240.0+21.0+5.01.0<5<6315B -55T Z B 00.0500.25521<007<5.240.0+21.0+5.01.0<01<9365B -55T Z B 09.4501.75531<0001<5.240.0+21.0+5.01.0<01<3426B -55T Z B 08.0602.36051<0001<5.240.0+21.0+5.01.0<01<7486B -55T Z B 06.6604.96002<0001<5.240.0+21.0+5.01.0<01<1557B -55T Z B 05.3705.67052<0051<5.240.0+21.0+5.01.0<01<65Notes:1. t p < 10 ms, T/t p > 1000.*) Additionnal measurement of Voltage group 9V1 to 75 at 95 % V zmin < 35 nA at T j 25 o C元器件交易网510SE V R U C C I T S I R E T C A R A H C D N A S G N I T A R (T A = 25oC unless otherwise noted)元器件交易网511SE V R U C C I T S I R E T C A R A H C D N A S G N I T A R (T A = 25oC unless otherwise noted)元器件交易网。
小博士GPS说明书汇总
小博士说明书介绍感谢您购买etrex(小博士)GPS接收机(以下简称“小博士”)--我们不停努力的结果，为了可以使您的新型GPS接收机发挥最大的用途，并且了解所有的操作细节，您可以花些时间阅读一下本手册。
手册由五部分组成：一、序言部分介绍了关于GPS系统和GPS接收机的基本知识。
二、基本操作部分介绍了“小博士”的结构、按键和基本操作。
三、主页面部分介绍了“小博士”四个主页面的概况。
四、具体功能详述部分详细说明了“小博士”各种功能的使用细节。
五、附录部分技术指标，相关附件等其他方面的信息。
标准配置包括主机：1台牵引绳索：1根中文说明书：1本本手册中，所有的按键名称将使用黑体字，所有的菜单选项将用“”括起来.GPS介绍全球定位系统（global positioning system - GPS）是美国从本世纪70年代开始研制，历时20年，耗资200亿美元，于1994年全面建成，具有在海、陆、空进行全方位实时三维导航与定位能力的新一代卫星导航与定位系统。
经过近10年我国测绘等部门的使用表明，GPS以全天候、高精度、自动化、高效益等显著的特点，赢得了广大测绘工作者的信赖，并成功地应用于大地测量、工程测量、航空摄影测量、运载工具导航和管制、地壳运动监测、工程变形监测、资源勘察、地球动力学等多种学科，从而给测绘领域带来一场深刻的技术革命。
随着全球定位系统的不断改进，硬、软件的不断完善，应用领域正在不断地开拓，目前已遍及国民经济各种部门，并开始逐步深入人们的日常生活。
GPS系统的特点:1)全球，全天候工作：能为用户提供连续，实时的三维位置，三维速度和精密时间。
不受天气的影响。
2)定位精度高：单机定位精度优于10米，采用差分定位，精度可达厘米级和毫米级。
3)功能多，应用广：随着人们对GPS认识的加深，GPS不仅在测量、导航、测速、测时等方面得到更广泛的应用，而且其应用领域不断扩大。
GPS发展历程GPS实施计划共分三个阶段：第一阶段为方案论证和初步设计阶段。
BQ30Z55EVM-001;中文规格书,Datasheet资料
bq30z50-R1and bq30z55-R1 Technical ReferenceLiterature Number:SLUU852January2012Contents Preface (11)1Introduction (13)2Calibration (15)2.1Overview (15)2.2Combining Calibrations (16)2.3Cell Voltage Calibration (17)2.4BAT Voltage Calibration (18)2.5PACK Voltage Calibration (18)2.6Current Calibration (19)2.6.1Offset Calibration (19)2.6.2Board Offset Calibration (19)2.6.3Gain Calibration (20)2.7Temperature Calibration (20)2.7.1Internal Temperature Sensor Calibration(Option1) (20)2.7.2Internal Temperature Sensor Calibration(Option2) (21)2.7.3TS1Calibration(Option1) (21)2.7.4TS1Calibration(Option2) (21)2.7.5TS2Calibration(Option1) (22)2.7.6TS2Calibration(Option2) (22)2.7.7TS3Calibration(Option1) (23)2.7.8TS3Calibration(Option2) (23)2.7.9TS4Calibration(Option1) (23)2.7.10TS4Calibration(Option2) (23)3Protections (25)3.1Introduction (25)3.2Cell Undervoltage Protection (25)3.3Cell Undervoltage Compensated Protection (25)3.4Cell Overvoltage Protection (26)3.5Overcurrent in Charge Protection (27)3.6Overcurrent in Discharge Protection (27)3.7Hardware-Based Protection (28)3.7.1Overload in Discharge Protection (28)3.7.2Short Circuit in Charge Protection (29)3.7.3Short Circuit in Discharge Protection (29)3.8Overtemperature in Charge Protection (30)3.9Overtemperature in Discharge Protection (30)3.10Overtemperature FET Protection (30)3.11SBS Host Watchdog Protection (31)3.12Pre-Charge Timeout Protection (31)3.13Fast Charge Timeout Protection (32)3.14Overcharge Protection (32)3.15Over-ChargingVoltage()Protection (32)3.16Over-ChargingCurrent()Protection (33)4Advanced Charge Algorithm (35)4.1Introduction (35)4.2Charge Temperature Ranges (35)4.3Voltage Range (36)4.4Charging Current (36)4.5Charging Voltage (37)4.6Valid Charge Termination (37)4.7Charge Inhibit (37)4.8Charge Suspend (38)4.9ChargingVoltage()Rate of Change (38)4.10ChargingCurrent()Rate of Change (38)4.11Charging Loss Compensation (39)5Permanent Fail (41)5.1Introduction (41)5.2Black Box Recorder (41)5.3Cell Undervoltage Permanent Fail (42)5.4Cell Overvoltage Permanent Fail (42)5.5Copper Deposition Permanent Fail (42)5.6Overtemperature Cell Permanent Fail (43)5.7Overtemperature FET Permanent Fail (43)5.8QMax Imbalance Permanent Fail (43)5.9Cell Balancing Permanent Fail (43)5.10Capacity Degradation Permanent Fail (44)5.11Impedance Permanent Fail (44)5.12Voltage Imbalance at Rest Permanent Fail (44)5.13Voltage Imbalance Active Permanent Fail (45)5.14Charge FET Permanent Fail (45)5.15Discharge FET Permanent Fail (45)5.16Thermistor Permanent Fail (45)5.17Chemical Fuse Permanent Fail (46)5.18AFE Register Permanent Fail (46)5.19AFE Communication Permanent Fail (46)5.20Second Level Protection Permanent Fail (46)5.21PTC Permanent Fail (47)5.22Instruction Flash Checksum Permanent Fail (47)5.23Open Cell Voltage Connection Permanent Fail (47)5.24Data Flash Permanent Fail (47)6Power Modes (49)6.1Normal Mode (49)6.2Sleep Mode (49)6.2.1Device Sleep (49)6.2.2ManufacturerAccess Sleep (50)6.3Ship Mode (50)6.3.1Ship Hibernate Mode (50)6.3.2Ship Shutdown Mode (50)6.4Shutdown Mode (50)6.4.1Voltage Based Shutdown (50)7Gauging (51)7.1Impedance Track (51)7.2Gas Gauge Mode (51)8LED Display (53)8.1LED Display State of Charge (53)8.2LED Display PF Codes (54)9Lifetime Data Collection (55)10Device Security (57)10.1Description (57)10.2SHA-1Description (57)10.3HMAC Description (57)10.4Authentication (57)10.5Unseal/Full Access (58)11SBS Commands (59)11.10x00ManufacturerAccess() (59)11.1.10x0000ManufacturerData (59)11.1.20x0001Device Type (59)11.1.30x0002Firmware Version (59)11.1.40x0003Hardware Version (60)11.1.50x0004Instruction Flash Checksum (60)11.1.60x0005Data Flash Checksum (60)11.1.70x0006Chemical ID (60)11.1.80x0010Shutdown Mode (60)11.1.90x0011Sleep Mode (60)11.1.100x0012Device Reset (61)11.1.110x001d Fuse Toggle (61)11.1.120x001e PRE-CHG FET (61)11.1.130x001f CHG FET (62)11.1.140x0020DSG FET (62)11.1.150x0021Gauging (62)11.1.16ManufacturerAccess()0x0022FET Control (62)11.1.17ManufacturerAccess()0x0023Lifetime Data Collection (62)11.1.18ManufacturerAccess()0x0024Permanent Failure (63)11.1.19ManufacturerAccess()0x0025Black Box Recorder (63)11.1.20ManufacturerAccess()0x0026Fuse (63)11.1.21ManufacturerAccess()0x0027LED Enable (64)11.1.22ManufacturerAccess()0x0028Lifetime Data Reset (64)11.1.23ManufacturerAccess()0x0029Permanent Fail Data Reset (64)11.1.24ManufacturerAccess()0x002a Black Box Recorder Reset (64)11.1.25ManufacturerAccess()0x002b LED Toggle (64)11.1.26ManufacturerAccess()0x002c LED Display On (64)11.1.27ManufacturerAccess()0x002D CAL Mode (64)11.1.28ManufacturerAccess()0x0030Seal Device (65)11.1.29ManufacturerAccess()0x0031UnSeal Device (65)11.1.30ManufacturerAccess()0x0032Full Access Device (65)11.1.31ManufacturerAccess()0x0033ROM Mode (66)11.1.32ManufacturerAccess()0x0034Ship Mode (66)11.1.33ManufacturerAccess()0x0035Unseal Key (66)11.1.34ManufacturerAccess()0x0036Full Access Key (66)11.1.35ManufacturerAccess()0x0037Authentication Key (67)11.1.36ManufacturerAccess()0x0050SafetyAlert (67)11.1.37ManufacturerAccess()0x0051SafetyStatus (67)11.1.38ManufacturerAccess()0x0052PFAlert (67)11.1.39ManufacturerAccess()0x0053PFStatus (67)11.1.40ManufacturerAccess()0x0054OperationStatus (68)11.1.41ManufacturerAccess()0x0055ChargingStatus (68)11.1.42ManufacturerAccess()0x0056GaugingStatus (68)11.1.43ManufacturerAccess()0x0057ManufacturingStatus (68)11.1.44ManufacturerAccess()0x0058AFE Register (68)11.1.45ManufacturerAccess()0x0060Lifetime Data Block1 (68)11.1.46ManufacturerAccess()0x0061Lifetime Data Block2 (69)11.1.47ManufacturerAccess()0x0062Lifetime Data Block3 (69)11.1.48ManufacturerAccess()0x0070ManufacturerInfo (69)11.1.49ManufacturerAccess()0x0071Voltages (69)11.1.50ManufacturerAccess()0x0072Temperatures (69)11.1.51ManufacturerAccess()0x0073ITSTATUS1 (69)11.1.52ManufacturerAccess()0x0074ITSTATUS2 (69)11.1.53ManufacturerAccess()0xF080Exit Calibration Output Mode (70)11.1.54ManufacturerAccess()0xF081Output CC and ADC for Calibration (70)11.1.55ManufacturerAccess()0xF082Output shorted Cc AND ADC Offset for Calibration (70)11.1.56ManufacturerAccess()0x01yy DF Access Row Address (71)11.20x01RemainingCapacityAlarm() (71)11.30x02RemainingTimeAlarm() (71)11.40x03BatteryMode() (73)11.50x04AtRate() (73)11.60x05AtRateToFull() (73)11.70x06AtRateToEmpty() (74)11.80x07AtRateOK() (74)11.90x08Temperature() (74)11.100x09Voltage() (74)11.110x0A Current() (74)11.120x0B AverageCurrent() (74)11.130x0C MaxError() (74)11.140x0D RelativeStateOfCharge() (75)11.150x0E AbsoluteStateOfCharge() (75)11.160x0F RemainingCapacity() (75)11.170x10FullChargeCapacity() (75)11.180x11RunTimeToEmpty() (75)11.190x12AverageTimeToEmpty() (76)11.200x13AverageTimeToFull() (76)11.210x14ChargingCurrent() (76)11.220x15ChargingVoltage() (76)11.230x16BatteryStatus() (77)11.240x17CycleCount() (78)11.250x18DesignCapacity() (78)11.260x19DesignVoltage() (78)11.270x1A SpecificationInfo() (78)11.280x1B ManufacturerDate() (79)11.290x1C SerialNumber() (79)11.300x20ManufacturerName() (79)11.310x21DeviceName() (80)11.320x22DeviceChemistry() (80)11.330x23ManufacturerData() (80)11.340x2F Authentication()AND ManufacturerInput() (80)11.350x3C–0x3F Cell Voltages() (80)11.360x50SafetyAlert() (82)11.370x51SafetyStatus() (84)11.380x52PFAlert() (86)11.390x53PFStatus() (88)11.400x54OperationStatus() (90)11.410x55ChargingStatus() (92)11.420x56GaugingStatus() (93)11.430x57ManufacturingStatus() (93)11.440x58AFERegisters() (95)11.450x60Lifetime Data Block1 (96)11.460x61Lifetime Data Block2 (97)11.470x62Lifetime Data Block3 (97)11.480x70ManufacturerInfo() (98)11.490x71Voltages() (98)11.500x72Temperatures() (98)11.510x73ITStatus1() (98)11.520x74ITStatus2() (99)12Data Flash Values and Device Configuration (103)12.1Data Formats (103)12.1.1Unsigned Integer (103)12.1.2Integer (103)12.1.3Floating Point (103)12.1.4Hex (103)12.1.5String (103)12.2Protections (103)12.2.1CUV—Cell Undervoltage (103)12.2.2CUVC—Cell Undervoltage Compensated (104)12.2.3COV—Cell Overvoltage (104)12.2.4OCC1—Overcurrent In Charge1 (104)12.2.5OCC2—Overcurrent In Charge2 (105)12.2.6OCC Overcurrent In Charge Recovery (105)12.2.7OCD1—Overcurrent In Discharge1 (105)12.2.8OCD2—Overcurrent In Discharge2 (105)12.2.9OCD—Overcurrent In Discharge Recovery (105)12.2.10OLD—Overload in Discharge (106)12.2.11SCC—Short Circuit In Charge (106)12.2.12SCD1—Short Circuit In Discharge1 (106)12.2.13SCD2—Short Circuit in Discharge2 (107)12.2.14SCD—Short Circuit in Discharge (107)12.2.15OTC—Over Temperature in Charge (107)12.2.16OTD—Over Temperature in Discharge (107)12.2.17OTF—Over Temperature FET (107)12.2.18HWD—Host Watchdog (108)12.2.19PTO—Pre Charge Mode Time Out (108)12.2.20CTO—Fast Charge Mode Time Out (108)12.2.21OC—Over Charge (108)12.2.22CHGV—ChargingVoltage (108)12.2.23CHGC—ChargingCurrent (109)12.3Permanent Fail (109)12.3.1CUV—Cell Undervoltage (109)12.3.2COV—Cell Overvoltage (109)12.3.3CUDEP—Copper Deposition (109)12.3.4OTCE—Over Temperature Cell (109)12.3.5OTF—Over Temperature FET (110)12.3.6QIM—QMax Imbalance (110)12.3.7CB—Cell Balance (110)12.3.8VIMR—Voltage Imbalance at Rest (110)12.3.9VIMA—Voltage Imbalance Active (110)12.3.10IMP—Impedance Imbalance (111)12.3.11CD—Capacity Degradation (111)12.3.12CFETF—CHG FET Failure (111)12.3.13DFET—DFET Failure (111)12.3.14TH—NTC Thermistor Failure (111)12.3.15FUSE—FUSE Failure (111)12.3.16AFER—AFE Register (112)12.3.17AFEC—AFE Communication (112)12.3.182LVL—2nd Level OV (112)12.3.19OCECO—Open Cell Connection (112)12.4Advanced Charge Algorithm (112)12.4.1Temperature Ranges (112)12.4.2Low Temp Charging (113)12.4.3Standard Temp Charging (113)12.4.4High Temp Charging (113)12.4.5REC Temp Charging (114)12.4.6PCHG (114)12.4.7MCHG (114)12.4.8Voltage Range (114)12.4.9Termination Config (115)12.4.10Cell Balancing Config (115)12.4.11Charging Rate of Change (116)12.4.12Charge Loss Compensation (116)12.5System Data (116)12.5.1Manufacturer Data (116)12.6SBS Configuration (116)12.6.1Data (116)12.6.2FD (118)12.6.3FC (118)12.6.4TDA (118)12.6.5TCA (118)12.6.6Max Error (119)12.7Lifetimes (119)12.7.1Voltage (119)12.7.2Current (119)12.7.3Safety Events (119)12.7.4Charging Events (120)12.7.5Gauging Events (121)12.7.6Power Events (121)12.7.7Cell Balancing (121)12.7.8Temperature (121)12.7.9Time (122)12.8Settings (123)12.8.1Fuse (123)12.8.2Manufacturing (124)12.8.3Protection (125)12.8.4Permanent Failure (126)12.8.5Configuration (126)12.8.6AFE (135)12.9Power (136)12.9.1Power (136)12.9.2Shutdown (136)12.9.3Sleep (136)12.9.4Ship (136)12.10Gas Gauging (137)12.10.1Current Thresholds (137)12.10.2State (137)12.11IT Config (138)12.12LED Config (140)12.13RA Table (141)12.13.1R_a0 (141)12.13.2R_a1 (141)12.13.3R_a2 (142)12.13.4R_a3 (143)12.13.5R_a0x (143)12.13.6R_a1x (144)12.13.7R_a2x (145)12.13.8R_a3x (146)12.14PF Status (148)12.14.1Device Status Data (148)12.14.2Device Voltage Data (160)12.14.3Device Current Data (161)12.14.4Device Temperature Data (161)12.14.5Device Gauging Data (161)12.14.6AFE Regs (162)12.15Black Box (167)12.15.1Safety Status (167)12.15.2PF Status (171)12.16Calibration (180)12.16.1Voltage (180)12.16.2Current (180)12.16.3Current Offset (180)12.16.4Temperature (180)12.16.5Internal Temp Model (180)12.16.6Cell Temp Model (181)12.16.7FET Temp Model (181)12.16.8Filter (183)12.16.9Current Deadband (183)A AFE Threshold and Delay Settings (185)A.1Overload in Discharge Protection(OLD) (185)A.2Short Circuit in Charge(SCC) (186)A.3Short Circuit in Discharge(SCD1and SCD2) (186)B Reading and Writing to Data Flash (189)C Sample Filter Settings (229)分销商库存信息: TIBQ30Z55EVM-001。
BZX84C18-V中文资料
Document Number Small Signal Zener DiodesFeatures•These diodes are also available in other case styles and other configurationsincluding: the SOD-123 case with type designation BZT52 series, the dual zenerdiode common anode configuration in the SOT-23case with type designation AZ23 series and the dual zener diode common cathode configuration in the SOT-23 case with type designation DZ23series.•The Zener voltages are graded according to the international E 24 standard. Standard Zener volt-age tolerance is ± 5 %. Replace "C" with "B" for ± 2 % tolerance.•Silicon Planar Power Zener Diodes •Lead (Pb)-free component•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECWeight: approx. 8.8 mgPackaging Codes/Options:GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/boxAbsolute Maximum RatingsT amb = 25°C, unless otherwise specified1) Device on fiberglass substrate, see layout.Thermal CharacteristicsT amb = 25°C, unless otherwise specified1)Device on fiberglass substrate, see layout.ParameterT est condition Symbol Value Unit Power dissipationP tot300 1)mWParameterTest condition Symbol Value Unit Thermal resistance junction to ambient air R thJA 420 1)°C/W Junction temperature T j 150°C Storage temperature rangeT S- 65 to + 150°CElectrical CharacteristicsPartnumber MarkingCodeZenerVoltageRangeDynamic Resistance T estCurrentTemp.Coefficientof ZenerVoltageTestCurrentReverse LeakageCurrentV Z @ I ZT1r zj @ I ZT1r zj @ I ZT2I ZT1αVZ @ I ZT1I ZT2I R@ V R VΩmA10-4/°C mAµA Vmin max min maxBZX84C2V4-V Z11 2.2 2.670 (≤100)2755-9.0-4.01501 BZX84C2V7-V Z12 2.5 2.975 (≤100)300 (≤600)5-9.0-4.01201 BZX84C3V0-V Z13 2.8 3.280 (≤95)325 (≤600)5-9.0-3.01101 BZX84C3V3-V Z14 3.1 3.585 (≤95)350 (≤600)5-8.0-3.0151 BZX84C3V6-V Z15 3.4 3.885 (≤90)375 (≤600)5-8.0-3.0151 BZX84C3V9-V Z16 3.7 4.185 (≤90)400 (≤600)5-7.0-3.0131 BZX84C4V3-V Z174 4.680 (≤90)410 (≤600)5-6.0-1.0131 BZX84C4V7-V Z1 4.4550 (≤80)425 (≤500)5-5.0+2.0132 BZX84C5V1-V Z2 4.8 5.440 (≤60)400 (≤480)5-3.0+4.0122 BZX84C5V6-V Z3 5.2615 (≤40)80 (≤400)5-2.0+6.0112 BZX84C6V2-V Z4 5.8 6.6 6.0 (≤10)40 (≤150)5-1.0+7.0134 BZX84C6V8-V Z5 6.47.2 6.0 (≤15)30 (≤80)5+2.0+7.0124 BZX84C7V5-V Z677.9 6.0 (≤15)30 (≤80)5+3.0+7.0115 BZX84C8V2-V Z77.78.7 6.0 (≤15)40 (≤80)5+4.0+7.010.75 BZX84C9V1-V Z88.59.6 6.0 (≤15)40 (≤100)5+5.0+8.010.56 BZX84C10-V Z99.410.68.0 (≤20)50 (≤150)5+5.0+8.010.27 BZX84C11-V Y110.411.610 (≤20)50 (≤150)5+5.0+9.010.18 BZX84C12-V Y211.412.710 (≤25)50 (≤150)5+6.0+9.010.18 BZX84C13-V Y312.414.110 (≤30)50 (≤170)5+7.0+9.010.18 BZX84C15-V Y413.815.610 (≤30)50 (≤200)5+7.0+9.010.050.7 V Znom.BZX84C16-V Y515.317.110 (≤40)50 (≤200)5+8.0+9.510.050.7 V Znom.BZX84C18-V Y616.819.110 (≤45)50 (≤225)5+8.0+9.510.050.7 V Znom.BZX84C20-V Y718.821.215 (≤55)60 (≤225)5+8.0+1010.050.7 V Znom.BZX84C22-V Y820.823.320 (≤55)60 (≤250)5+8.0+1010.050.7 V Znom.BZX84C24-V Y922.825.625 (≤70)60 (≤250)5+8.0+1010.050.7 V Znom.BZX84C27-V Y1025.128.925 (≤80)65 (≤300)2+8.0+100.50.050.7 V Znom.BZX84C30-V Y11283230 (≤80)70 (≤300)2+8.0+100.50.050.7 V Znom.BZX84C33-V Y12313535 (≤80)75 (≤325)2+8.0+100.50.050.7 V Znom.BZX84C36-V Y13343835 (≤90)80 (≤350)2+8.0+100.50.050.7 V Znom.BZX84C39-V Y14374140 (≤130)80 (≤350)2+10+120.50.050.7 V Znom.BZX84C43-V Y15404645 (≤150)85 (≤375)2+10+120.50.050.7 V Znom.BZX84C47-V Y16445050 (≤170)85 (≤375)2+10+120.50.050.7 V Znom.BZX84C51-V Y17485460 (≤180)85 (≤400)2+10+120.50.050.7 V Znom.BZX84C56-V Y18526070 (≤200)100 (≤425)2+9.0+110.50.050.7 V Znom.BZX84C62-V Y19586680 (≤215)100 (≤450)2+9.0+120.50.050.7 V Znom.BZX84C68-V Y20647290 (≤240)150 (≤475)2+10+120.50.050.7 V Znom.BZX84C75-V Y21707995 (≤255)170 (≤500)2+10+120.50.050.7 V Znom. Document Number 85763Document Number Electrical CharacteristicsPartnumberMarking CodeZener Voltage Range Dynamic ResistanceTest CurrentT emp. Coefficient of Zener Voltage T est CurrentReverse LeakageCurrentV Z @ I ZT1r zj @ I ZT1r zj @ I ZT2I ZT1αVZ @ I ZT1I ZT2I R @ V R V ΩmA10-4/°C mAµAVminmax min max BZX84B2V4-V Z50 2.35 2.4570 (≤100)2755-9-41501BZX84B2V7-V Z51 2.65 2.7575 (≤100)300 (≤600)5-9-41201BZX84B3V0-V Z52 2.94 3.0680 (≤95)325 (≤600)5-9-31101BZX84B3V3-V Z53 3.23 3.3785 (≤95)350 (≤600)5-8-3151BZX84B3V6-V Z54 3.53 3.6785 (≤90)375 (≤600)5-8-3151BZX84B3V9-V Z55 3.82 3.9885 (≤90)400 (≤600)5-7-3131BZX84B4V3-V Z56 4.21 4.3980 (≤90)410 (≤600)5-6-1131BZX84B4V7-V Z57 4.61 4.7950 (≤80)425 (≤500)5-52132BZX84B5V1-V Z585 5.240 (≤60)400 (≤480)5-34122BZX84B5V6-V Z59 5.49 5.7115 (≤40)80 (≤400)5-26112BZX84B6V2-V Z60 6.08 6.32 6.0 (≤10)40 (≤150)5-17134BZX84B6V8-V Z61 6.66 6.94 6.0 (≤15)30 (≤80)527124BZX84B7V5-V Z627.357.65 6.0 (≤15)30 (≤80)537115BZX84B8V2-V Z638.048.36 6.0 (≤15)40 (≤80)54710.75BZX84B9V1-V Z648.929.28 6.0 (≤15)40 (≤100)55810.56BZX84B10-V Z659.810.28.0 (≤20)50 (≤150)55810.27BZX84B11-V Z6610.811.210 (≤20)50 (≤150)55910.18BZX84B12-V Z6711.812.210 (≤25)50 (≤150)56910.18BZX84B13-V Z6812.713.310 (≤30)50 (≤170)57910.18BZX84B15-V Z6914.715.310 (≤30)50 (≤200)57910.050.7 V Znom.BZX84B16-V Z7015.716.310 (≤40)50 (≤200)589.510.050.7 V Znom.BZX84B18-V Z7117.618.410 (≤45)50 (≤225)589.510.050.7 V Znom.BZX84B20-V Z7219.620.415 (≤55)60 (≤225)581010.050.7 V Znom.BZX84B22-V Z7321.622.420 (≤55)60 (≤250)581010.050.7 V Znom.BZX84B24-V Z7423.524.525 (≤70)60 (≤250)581010.050.7 V Znom.BZX84B27-V Z7526.527.525 (≤80)65 (≤300)28100.50.050.7 V Znom.BZX84B30-V Z7629.430.630 (≤80)70 (≤300)28100.50.050.7 V Znom.BZX84B33-V Z7732.333.735 (≤80)75 (≤325)28100.50.050.7 V Znom.BZX84B36-V Z7835.336.735 (≤90)80 (≤350)28100.50.050.7 V Znom.BZX84B39-V Z7938.239.840 (≤130)80 (≤350)210120.50.050.7 V Znom.BZX84B43-V Z8042.143.945 (≤150)85 (≤375)210120.50.050.7 V Znom.BZX84B47-V Z8146.147.950 (≤170)85 (≤375)210120.50.050.7 V Znom.BZX84B51-V Z82505260 (≤180)85 (≤400)210120.50.050.7 V Znom.BZX84B56-V Z8354.957.170 (≤200)100 (≤425)29110.50.050.7 V Znom.BZX84B62-V Z8460.863.280 (≤215)100 (≤450)29120.50.050.7 V Znom.BZX84B68-V Z8566.669.490 (≤240)150 (≤475)210120.50.050.7 V Znom.BZX84B75-VZ8673.576.595 (≤255)170 (≤500)210120.50.050.7 V Znom. Document Number 85763Typical Characteristics (Tamb = 25 °C unless otherwise specified)Figure 1. Forward characteristics Figure 2. Admissible Power Dissipation vs. Ambient Temperature Figure3. Pulse Thermal Resistance vs. Pulse Duration1811418115Figure 4. Dynamic Resistance vs. Zener CurrentFigure 5. Capacitance vs. Zener VoltageFigure6. Dynamic Resistance vs. Zener Current1811718118Document Number Figure 7. Dynamic Resistance vs. Zener CurrentFigure 8. Thermal Differential Resistance vs. Zener Voltage Figure9. Dynamic Resistance vs. Zener Voltage18120Figure 10. Temperature Dependence of Zener Voltage vs. ZenerVoltageFigure 11. Change of Zener Voltage vs. Junction TemperatureFigure 12. Temperature Dependence of Zener Voltage vs. ZenerVoltage18124°C18136 Document Number 85763Figure 13. Change of Zener Voltage vs. Junction TemperatureFigure 14. Change of Zener voltage from turn-on up to the point ofthermal equilibrium vs. Zener voltageFigure 15. Change of Zener voltage from turn-on up to the point ofthermal equilibrium vs. Zener voltage181261813718138Document Number Figure 16. Breakdown CharacteristicsFigure17. Breakdown Characteristics1811118112 Document Number 85763Layout for R Theta;JA testThickness: Fiberglass 0.059 in. (1.5 mm)Copper leads 0.012 in. (0.3 mm)Figure18. Breakdown Characteristics18113Package Dimensions in mm (Inches)Document Number Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85763。
BZV55B5V1中文资料
Pb RoHSCOMPLIANCEBZV55B SERIES 0.5 Watts Hermetically Sealed GlassZener Voltage RegulatorsFeatures Zener voltage range 2.0 to 75 voltsLL-34(Mini-MELF) packageSurface device type mountingHermetically sealed glassCompression Bonded ConstructionAll external surfaces are corrosionresistant and terminals are readilysolderableRoHS compliantMatte Tin(Sn) lead finishBlue color band indicates negative polarityMINI-MELFDimensions in inches and (millimeters)Maximum Ratings and Electrical CharacteristicsRating at 25o C ambient temperature unless otherwise specified.Type Number Symbol Value Units Power Dissipation Ptot500 mW Operating and Storage Temperature Range T J, T STG-65 to + 200 o CNotes: These ratings are limiting values above which the serviceability of the diode may be impairedVersion: B07Figure 1. Total Power Dissipation vs. Ambient TemperatureFigure 2. Typical Change of Working Voltage under OperatingConditions at T amb =25°CFigure 3. Typical Change of Working Voltage vs. JunctionTemperature1201600100300400500600P t o t - T o t a l P o w e r D i s s i p a t i o n (m W )T am b - Am b ient Temperat ure (°C)20020080401015201101001000V Z - V o l t a g e C h a n g e (m V )V Z - Z-V oltage (V )5- 60601201800.80.91.01.11.21.3V Z t n - R e l a t i v e V o l t a g e C h an g eT j - J u nction Temperat u re (°C)0Figure 4. Temperature Coefficient of Vz vs. Z-VoltageFigure 5. Diode Capacitance vs. Z-VoltageFigure 6. Forward Current vs. Forward Voltage30- 5051015V Z - Z-V oltage (V )504010200T K V Z - T e m p e r a t u r e C o e f f i c i e n t o f V Z (10-4/K )101550C D - D i o d e C a p a c i t a n c e (p F )V Z - Z-V oltage (V )20500.20.40.60.80.0010.010.1110100I F - F o r w a r d C u r r e n t (m A )V F - For w ard V oltage (V )Figure 7. Z-Current vs. Z-VoltageFigure 8. Z-Current vs. Z-Voltage820020406080I Z - Z -C u r r e n t (m A )4612V Z - Z-V oltage (V )152025300I Z - Z -C u r r e n t (m A )V Z - Z-Voltage (V )Figure 9. Differential Z-Resistance vs. Z-Voltage051015201101001000(Ω)V Z - Z-V oltage (V )r Z - D i f f e r e n t i a l Z -R e s i s t a n c e Figure 10. Thermal ResponseZ t h p - T h e r m a l R e s i s t a n c e f o r P u l s e C o n d . (K W )t P - P u lse Length (ms)10-1100101102ELECTRICAL CHARACTERISTICS (TA=25O C unless otherwise noted)Type Z ZT @ I ZT IR @ VR Number V Z V Z I ZT Ohms I ZK Z ZK @ I ZK uA VR Min (V)Max (V)mA Max mA Ohms MaxV BZV55B2V0 1.96 2.045100 1.060050 1.0BZV55B2V2 2.16 2.245100 1.060050 1.0BZV55B2V4 2.35 2.45585 1.060050 1.0BZV55B2V7 2.65 2.75585 1.060010 1.0BZV55B3V0 2.94 3.06585 1.06004 1.0BZV55B3V3 3.23 3.37585 1.06002 1.0BZV55B3V6 3.53 3.67585 1.06002 1.0BZV55B3V9 3.82 3.98585 1.06002 1.0BZV55B4V3 4.21 4.39575 1.06001 1.0BZV55B4V7 4.61 4.79560 1.06000.5 1.0BZV55B5V1 5.00 5.2535 1.05500.1 1.0BZV55B5V6 5.49 5.71525 1.04500.1 1.0BZV55B6V2 6.08 6.32510 1.02000.1 2.0BZV55B6V8 6.66 6.9458 1.01500.1 3.0BZV55B7V57.357.6557 1.0500.1 5.0BZV55B8V28.048.3657 1.0500.1 6.2BZV55B9V18.929.28510 1.0500.1 6.8BZV55B109.8010.2515 1.0700.17.5BZV55B1110.4011.22520 1.0700.18.2BZV55B1211.4012.24520 1.0900.19.1BZV55B1312.7413.26526 1.01100.110BZV55B1514.7015.30530 1.01100.111BZV55B1615.6816.32540 1.01700.112BZV55B1817.6418.36550 1.01700.113BZV55B2019.6020.40555 1.02200.115BZV55B2221.5622.44555 1.02200.116BZV55B2423.5224.48580 1.02200.118BZV55B2726.4627.54280 1.02200.120BZV55B3029.4030.60280 1.02200.122BZV55B3332.3433.66280 1.02200.124BZV55B3635.2836.72280 1.02200.127BZV55B3938.2239.782900.55000.128BZV55B4342.1443.862900.56000.132BZV55B4746.0647.9421100.57000.135BZV55B5149.9852.0221250.57000.138BZV55B5654.8857.1221350.510000.142BZV55B6260.7663.24 2.51500.510000.147BZV55B6866.6469.36 2.51600.510000.151BZV55B7573.5076.502.51700.510000.156VF Forward Voltage = 1.0v Maximum @ IF=100mA for all types.Notes: 1. The type numbers listed have zener voltage min/max limits as shown.2. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (I ZT or I ZK ) is superimposed to I ZT or I ZK .Version: B 07(Volts)V Z @ I ZT。
WGB-53（C）WGB-54（C）WGB-55（C）说明书
WGB-53（C）WGB-54（C）WGB-55（C）说明书1．保护对象说明本装置为微机综合保护装置，根据软件的不同配置可实现对线路、电动机、电容器及厂用变的保护，装置在出厂时默认设置为线路保护，在实际使用时请用户务必将保护对象设置的与实际相符；具体设置方法如下：2．整定说明假设用户要对‘过流I段’定值按如下要求整定：将本保护投入，电流定值设置为21.4A，延时设置为0.2 s，可参照如下流程进行：3．控制回路异常说明在使用时因控制回路接线不当本装置可能会有‘控制回路异常’的告警提示，如果出现如上情况可按照如下方式进行处理：进入装置“查看”菜单下的“开关量”子菜单，查看本菜单下的TW（跳位）和HW （合位）的状态，正常情况下断路器在跳闸状态时TW为1、HW 为0，断路器在合闸状态时TW为0、HW为1，如与上述情况不符可判断为控制回路接线错误，请仔细参照本说明书的第6节“产品接线说明”和WGB-53（C），WGB-54（C），WGB-55（C）控制回路接线示意排图’进行查修正；4．调试说明部分用户在对本装置实验时由于设置、接线或操作不当可能出现如下状况：例如预对‘过流II段’进行动作试验，对装置施加了电流但保护却不动作，如出现上述情况应该为用户原因，可按如下方法排查：A．检查‘过流II段’保护功能是否投入、电流定值及动作延时是否妥当，检查方法如下：在“查看”菜单下的“定值”子菜单选择当前使用的定值区进入，按“↓”键翻到‘过流II段’的相关定值上，确认压板已经投入并且定值合理，否则需到‘整定’菜单下对‘过流II段’定值进行重新整定；B．检查是否对保护装置正确的施加了电流，主要包括如下方面：◇用户使用的电流输出设备是否工作正常；◇用户对装置交流回路的接线是否正确，施加的电流回路是否正确；◇用户施加的电流是否已经大于了‘过流II段’的电流定值并且已经等待了本保护规定的动作延时；◇查看本保护装置实际采集到的动作电流是否与用户施加的电流相符，查看方法：在装置的‘主信息屏’或者进入“查看”菜单下的“模拟量”子菜单即可看到装置实际的采样电流。
佳木斯YB80-355低压隔爆型三相异步电动机样本手册
堵转电流 额定电流
转 速 3000 r/min
堵转转矩 最大转矩 额定转矩 额定转矩
（2 极）
重量 (kg)
66
0.8
5.0
68
0.81
70
5.5
73
0.83
75
6.0
78
0.84
79
19
20 22 23 31 2.3
81
0.85
37
7.0
83
2.2
50
85
53
86.4 0.88
82
噪声 dB(A) 空载 负载
同 步 转 速 1000 r/min （6 极）
711-6
0.18 835
1.15
0.66
62
0.66
52 59
712-6
0.25 860
1.53
0.89
0.68
21
63
1.9
801-6
0.37
2.25
1.3
0.70
4.0
900
55 61
802-6
0.55
2.94
1.7
66
22.5
0.72
2.1
90S-6
84
6.0
2.1
9.4
83
98 69 76
0.78
12.6
85
2.4
114
160M-6 7.5
160L-6
11
16.8
86
6.5
0.79
24.3 87.5
141 80
165 73
180L-6
15 970
31.6
89
SN55LBC176中文资料
元器件交易网IMPORTANT NOTICETexas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinueany product or service without notice, and advise customers to obtain the latest version of relevant informationto verify, before placing orders, that information being relied on is current and complete. All products are soldsubject to the terms and conditions of sale supplied at the time of order acknowledgement, including thosepertaining to warranty, patent infringement, and limitation of liability.TI warrants performance of its semiconductor products to the specifications applicable at the time of sale inaccordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extentTI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarilyperformed, except those mandated by government requirements.CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OFDEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICALAPPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, ORWARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHERCRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TOBE FULLY AT THE CUSTOMER’S RISK.In order to minimize risks associated with the customer’s applications, adequate design and operatingsafeguards must be provided by the customer to minimize inherent or procedural hazards.TI assumes no liability for applications assistance or customer product design. TI does not warrant or representthat any license, either express or implied, is granted under any patent right, copyright, mask work right, or otherintellectual property right of TI covering or relating to any combination, machine, or process in which suchsemiconductor products or services might be or are used. TI’s publication of information regarding any thirdparty’s products or services does not constitute TI’s approval, warranty or endorsement thereof.Copyright © 2000, Texas Instruments Incorporated。
bzv55
DATA SHEETProduct specificationSupersedes data of 1999May 212002Feb 28BZV55 seriesVoltage regulator diodes1/3 page (Datasheet)M3D054Voltage regulator diodesBZV55 seriesFEATURES•Total power dissipation: max.500mW •Two tolerance series:±2%, and approx.±5%•Working voltage range: nom.2.4to 75V (E24range)•Non-repetitive peak reverse power dissipation:max.40W.APPLICATIONS•Low voltage stabilizers or voltage references.DESCRIPTIONLow-power voltage regulator diodes in small hermetically sealed glass SOD80C SMD packages. The diodes are available in the normalized E24±2% (BZV55-B) and approx.±5% (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4to 75V.columnsMAM215kaFig.1Simplified outline (SOD80C) and symbol.The cathode is indicated by a yellow band.LIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).Note1.Device mounted on a ceramic substrate of 10×10×0.6mm.SYMBOL PARAMETERCONDITIONSMIN.MAX.UNIT I F continuous forward current −250mAI ZSM non-repetitive peak reverse current t p =100µs; square wave;T j =25°C prior to surge see Tables 1and 2A P tot total power dissipationT amb ≤50°C; note 1−400mW tie-point ≤50°C; note 1−500mW P ZSM non-repetitive peak reverse power dissipationt p =100µs; square wave;T j =25°C prior to surge; see Fig.3−40W T stg storage temperature −65+200°C T j junction temperature−65+200°CVoltage regulator diodes BZV55 seriesELECTRICAL CHARACTERISTICSTotal BZV55-B and BZV55-C seriesT j=25°C; unless otherwise specified.SYMBOL PARAMETER CONDITIONS MAX.UNIT V F forward voltage I F=10mA; see Fig.40.9V I R reverse currentBZV55-B/C2V4V R=1V50µABZV55-B/C2V7V R=1V20µABZV55-B/C3V0V R=1V10µABZV55-B/C3V3V R=1V5µABZV55-B/C3V6V R=1V5µABZV55-B/C3V9V R=1V3µABZV55-B/C4V3V R=1V3µABZV55-B/C4V7V R=2V3µABZV55-B/C5V1V R=2V2µABZV55-B/C5V6V R=2V1µABZV55-B/C6V2V R=4V3µABZV55-B/C6V8V R=4V2µABZV55-B/C7V5V R=5V1µABZV55-B/C8V2V R=5V700nABZV55-B/C9V1V R=6V500nABZV55-B/C10V R=7V200nABZV55-B/C11V R=8V100nABZV55-B/C12V R=8V100nABZV55-B/C13V R=8V100nABZV55-B/C15to BZV55-B/C75V R=0.7V Znom50nA4Product specificationBZV55 series3V3 3.23 3.37 3.1 3.53506008595−3.5−2.40450 6.03V6 3.53 3.67 3.4 3.83756008590−3.5−2.40450 6.03V9 3.82 3.98 3.7 4.14006008590−3.5−2.50450 6.04V3 4.21 4.39 4.0 4.64106008090−3.5−2.50450 6.04V7 4.61 4.79 4.4 5.04255005080−3.5−1.40.2300 6.05V1 5.00 5.20 4.8 5.44004804060−2.7−0.8 1.2300 6.05V6 5.49 5.71 5.2 6.0804001540−2.0 1.2 2.5300 6.06V2 6.08 6.32 5.8 6.6401506100.4 2.3 3.7200 6.06V8 6.66 6.94 6.47.23080615 1.2 3.0 4.5200 6.07V57.357.657.07.93080615 2.5 4.0 5.3150 4.08V28.048.367.78.74080615 3.2 4.6 6.2150 4.09V18.929.288.59.640100615 3.8 5.57.0150 3.0109.8010.209.410.650150820 4.5 6.48.090 3.01110.8011.2010.411.6501501020 5.47.49.085 2.51211.8012.2011.412.7501501025 6.08.410.085 2.51312.7013.3012.414.150********.09.411.080 2.51514.7015.3013.815.65020010309.211.413.075 2.01615.7016.3015.317.150200104010.412.414.075 1.51817.6018.4016.819.150225104512.414.416.070 1.52019.6020.4018.821.260225155512.315.618.060 1.52221.6022.4020.823.360250205514.117.620.060 1.252423.5024.5022.825.660250257015.919.622.0551.255Product specificationBZV55 series3635.3036.7034.038.080350359026.031.837.4450.83938.2039.8037.041.0803504013028.734.841.2450.74342.1043.9040.046.0853754515031.438.846.6400.64746.1047.9044.050.0853755017035.042.951.8400.55150.0052.0048.054.0904006018038.646.957.2400.45654.9057.1052.060.01004257020042.252.063.8400.36260.8063.2058.066.01204508021558.864.471.6350.36866.6069.4064.072.01504759024065.671.779.8350.257573.5076.5070.079.01705009525573.480.288.6350.2Voltage regulator diodesBZV55 seriesTHERMAL CHARACTERISTICS Note1.Device mounted on a ceramic substrate of 10×10×0.6mm.SYMBOL PARAMETERCONDITIONSVALUE UNIT R th j-tp thermal resistance from junction to tie-point300K/W R th j-a thermal resistance from junction to ambient see Fig.2 and note 1380K/WGRAPHICAL DATAhandbook, full pagewidth10−1110102103104105MBG930102101103t p (ms)t pt p TTδ =0.020.01≤0.0010.750.500.330.200.100.05δ = 1R th j-a (K/W)Fig.2 Thermal resistance from junction to ambient as a function of pulse duration.Voltage regulator diodes BZV55 seriesFig.3Maximum permissible non-repetitive peak reverse power dissipation versus duration.handbook, halfpageMBG8011031duration (ms)P ZSM (W)1010210−1101(1)(2)(1)T j =25°C (prior to surge).(2)T j =150°C (prior to surge).Fig.4Typical forward current as a function of forward voltage.handbook, halfpage0.61.03001000200MBG7810.8V F (V)I F (mA)T j =25°C.Fig.5Temperature coefficient as a function of working current; typical values.handbook, halfpage060−2−3−1MBG7832040I Z (mA)S Z (mV/K)4V33V93V63V02V42V73V3BZV55-B/C2V4to BZV55-B/C4V3.T j =25to 150°C.Fig.6Temperature coefficient as a function of working current; typical values.handbook, halfpage0201610−55MBG7824812I Z (mA)S Z (mV/K)4V71211109V18V27V56V86V25V65V1BZV55-B/C4V7to BZV55-B/C12.T j =25to 150°C.Voltage regulator diodesBZV55 seriesPACKAGE OUTLINEREFERENCESOUTLINE VERSION EUROPEAN PROJECTIONISSUE DATE IEC JEDECEIAJNote1. The marking band indicates the cathode.SOD80C100H0197-06-20Hermetically sealed glass surface mounted package; 2 connectorsSOD80CUNIT D mm 1.601.453.73.30.3H L DIMENSIONS (mm are the original dimensions)HDLL(1)1 2 mmscalekaVoltage regulator diodesBZV55 seriesDATA SHEET STATUS Notes1.Please consult the most recently issued data sheet before initiating or completing a design.2.The product status of the device(s) described in this data sheet may have changed since this data sheet waspublished. The latest information is available on the Internet at URL .DATA SHEET STATUS (1)PRODUCT STATUS (2)DEFINITIONSObjective dataDevelopmentThis data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice.Preliminary data QualificationThis data sheet contains data from the preliminary specification.Supplementary data will be published at a later date. PhilipsSemiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product.Product data ProductionThis data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.DEFINITIONSShort-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device.These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied.Exposure to limiting values for extended periods may affect device reliability.Application information Applications that are described herein for any of these products are forillustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.DISCLAIMERSLife support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products canreasonably be expected to result in personal injury.Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.Right to make changes Philips Semiconductorsreserves the right to make changes,without notice,in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. PhilipsSemiconductors assumes no responsibility or liability for the use of any of these products,conveys no licence or title under any patent, copyright, or mask work right to these products,and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.Voltage regulator diodes BZV55 seriesNOTESPhilips Semiconductors Product specification Voltage regulator diodes BZV55 seriesNOTES2002Feb2811Philips Semiconductors – a worldwide companyContact informationFor additional information please visit .Fax:+31402724825For sales offices addresses send e-mail to:sales.addresses@.© Koninklijke Philips Electronics N.V. 2002SCA74 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract,is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.Printed in The Netherlands613514/03/pp12 Date of release:2002Feb28Document order number: 939775009386。
ZBZJⅢ特种变比组别测试仪使用手册
ZBZJ- Ⅲ特种变比组别测试仪使用手册武汉智能星电气有限企业2012-2-20目录一、概括 (3)二、技术指标 (4)三、仪器构造 (4)四、使用和操作 (6)1.操作注意事项 . (6)2.按键功能描绘： . (6)3.菜单描绘 . (7)4.操作举例 . (12)五、注意事项 (15)八、运输、储存 (17)九、售后服务 (17)ZBZJ-Ⅲ特种变比组别测试仪一、概括在电力变压器的半成品、成品生产过程中，新安装的变压器投入运转以前及依据国家电力部的预防性试验规程，要求对运转的变压器进行匝数比或电压比测试，能够检查变压器匝数比的正确性、分接开关的状况、变压器能否匝间短路、变压器能否能够并列运转。
传统的变比电桥读数不直观，要进行换算，只好逐相进行丈量。
ZBZJ-III 全自动变比组别测试仪战胜了传统变比电桥测试的弊端，操作简易直观，一次达成三相变比或匝比测试，测试快，正确度高。
1．测试量程宽，最高达10000 。
2．测试速度快， 15 秒钟达成三相测试。
3．Ζ形联接变压器测试。
4．自动达成组别测试功能。
5．高、低压反接的保护功能，变压器短路、匝间短路保护功能。
6．打印机输出丈量结果，中文菜单显示。
二、技术指标1.量程： 0.9 ～100002.精准度：± 0.1%+2 字(0.9~500) 、±0.2%+2 字 (501~2000)±0.3%+2 字 (2001~10000)3.分辨率：最小4. 工作电源： AC220V ±10%50±Hz5.环境温度： -10 ℃～ 40 ℃6.相对湿度：≤ 85% ，不结露7.外形尺寸： 400mmX320mmX150mm三、仪器构造1．显示屏：240 ×64 点阵液晶，带LED 背光，显示操作菜单和测试结果。
2．高压端：接红色外皮四芯电缆插头，电缆的黄、绿、红、黑四色测试夹，对应接被测变压器高电压侧的 A、B、C三相和中性点 O。
武汉市合众电气设备制造 ZHT-B 型 综合控制台 说明书
ZHT-B型综合控制台使用手册武汉市合众电气设备制造有限公司目录1．概述 (2)2．直流阻测试 (11)3．变比组别测试 (25)4．交流耐压试验 (33)5．产品随机附件 (34)一．概述该综合台适用于供配电系统，电力变压器制造厂，工矿等企业单位，能真实地判断电力变压器的空载电流，空载损耗，阻抗电压和负载损耗，准确的测量电力变压器直流电阻，温升，实施状态诊断，确保安全运行，为监测或修造变压器提供了可靠的数据。
1-1．主要特点该设备采用高档的单片机作为处理器，使用独特科学的算法进行数据的运算和处理，模数转换采用了高精度快速A/D转换器，模拟信号的调节也采用了目前先进使用的处理技术，这些为仪器的高性能、高精度、高可靠性提提供了必要条件。
该仪器的人机接口采用蓝屏（240 * 128）全中文的汉字图形显示器，菜单严格分级，逐步引导您完成实验，您只需要开机，按下任意键，仪器提供的菜单就会引导您完成你所需要的实验。
列外该仪器还提供了面板式的微型打印机，可以将实验的结果打印出来，作为实验存档的原始数据。
仪器还提供了串口通讯功能，你只要按说明书提供的通讯协议编写好软件，就可以在上位机上直接操作使用该仪器，完成实验。
该仪器主要用于电力变压器的空载及负载实验，所测的直接参数是三相电压，三相电压均方根、三相电流，三相功率，实验电源频率。
空载实验时根据所测数据计算出变平均电压、平均电流、总功率、空载电流，校正后的空载损耗；负载实验计算出短路阻抗、短路损耗和75度额定电流下的短路损耗。
该仪器集多种实验方式于一体，可以用于单相变压器和三相变压器的空载和负载实验，而且三相变压器的空载实验和负载实验还提供了双表法空/负载实验和三表法空/负载实验。
使您觉得使用该仪器非常的方便、灵活。
1-2．主要技术参数：电压：测量范围：0V ~ 500V误差范围：全量程范围内0.2级电流：测量范围：0A ~ 5(60)A误差范围：全量程范围内0.2级功率：测量范围：0KW ~ 2.500KW误差范围：全量程范围内0.3级频率：测量范围：45Hz ~ 65Hz误差范围：全量程范围内±0.05Hz说明：外接电压互感器和电流互感器可以拓宽仪器的测量范围。
55寸黑白电视机.doc
55寸黑白电视机目录目录.......................................................................... - 1 -1.绪论...................................................................... - 4 -2.电视机工作原理.................................................. - 5 -2.1电视的接收方式....................................... - 6 -2.2 电视信号的分离...................................... - 6 -3. 黑白电视机的组成............................................ - 6 -3.1 电源电路.................................................. - 7 -3.2 场频电路.................................................. - 7 -3.3 行频电路.................................................. - 7 -3.4 信号处理电路.......................................... - 7 -﹡3.5黑白显像管........................................... - 8 -3.5.1显像管的结构............................... - 8 -3.5.2黑白显像管的现象原理............... - 9 -4.元器件简介.......................................................... - 9 -4.1色环电阻................................................. - 10 -4.1.1色环电阻简介............................. - 10 -4.1.2顺序的识别................................. - 10 -4.1.3大小的识别................................. - 11 -4.1.4对照表......................................... - 11 -4.2电容......................................................... - 12 -4.2.1电容器的型号命名方法........... - 12 -4.2.2识别方法..................................... - 12 -4.2.3电容容量误差表......................... - 13 -4.3二极管..................................................... - 13 -4.3.1二极管简介................................. - 13 -4.3.2二极管工作原理......................... - 13 -4.3.3二极管的表示............................. - 14 -4.4三极管..................................................... - 14 -4.5行输出变压器......................................... - 15 -4.6高频头..................................................... - 15 -4.7变压器..................................................... - 15 -5.电视机的焊接与安装........................................ - 16 -6.系统调试............................................................ - 19 -6.1 电源电路的调试.................................... - 19 -6.2通道部分的调试..................................... - 19 -6.3扫描电路的调试..................................... - 19 -6.4控制部分的调试..................................... - 19 -7.整机组装及调试................................................ - 20 -7.1接线......................................................... - 20 -7.2调试......................................................... - 20 -7.3装壳......................................................... - 20 - 结论........................................................................ - 21 - 心得体会................................................................ - 22 -致谢........................................................................ - 24 - 参考文献................................................................ - 25 - 附录........................................................................ - 27 - 机芯主板图.................................................... - 27 - 元器件清单.................................................... - 28 -1.绪论通信工程专业装配实习是一个十分重要的综合性实践教学环节，是学生综合运用所学知识技能，为将来走上社会工作岗位奠定基础的一个重要实践环节。
55中夏牌ZX2035电视机安装实习指导书.docx
电视机安装实习指导书谭政编青岛港湾职业学院实验实训中心二OO四年八月一. ..................................................... 实习目的.. (3)二实训产品技术参数 (3)三.电路工作原理 (4)（―）ZX2035型黑白电视机方框图 (4)（二）集成电路CD5151CP的功能及内部框图 (4)（三）Z X2035型黑白电视机信号流程 (6)（四）Z X2035型黑白电视机各部分工作原理 (6)四.印制板的焊接 (11)五.电视机的分级安装和调试 (12)（-）调试 (12)（―）单元电路调节时的提示 (14)（三）总装 (14)六.电视机整机常见故障检修 (15)（-）光栅故障检修 (15)（二） ................................ 图象故障的检修17（三） ................................ 伴音故障的检修18七.检修黑片电视机的常用方法 (18)附录一： (22)附录二 (27)一・实习目的通过对5.5 "电视机安装、焊接、调试”，了解黑白电视机的工作原理、训练动手能力。
要求：1・熟悉常用电了元件的型号、规格、性能及使用范圉，能正确识别和选用常用电子元器件，能杳阅电子元器件手册。
2.能运用万用表进行常用元器件的一般检测、判别和筛选。
3.能独立使用电烙铁进行手工焊接，了解一般电子产品的装配工艺流程，能看懂电路图及装配图。
4.了解常用电子线路的调试方法，能按工艺要求进行调试，使产品达到设计要求，能排出在调试中出现的故障。
二.实训产品技术参数中夏牌ZX2035型是一款5. 5英寸小屏幕黑白电视机套件。
该套件采用大规模单片电视机集成专用电路cd5151cp(或cdc5151p),由于该芯片把所有小信号处理电路都集成在一起，所以电路具有代表性，外围元件少，调试比较简单，成功率高。
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Pb RoHSCOMPLIANCEBZT55B SERIES 0.5 Watts Hermetically Sealed GlassZener Voltage RegulatorsFeatures Zener voltage range 2.0 to 75 voltsMini-MELF packageSurface device type mountingHermetically sealed glassCompression Bonded ConstructionAll external surfaces are corrosionresistant and terminals are readilysolderableRoHS compliantMatte Tin(Sn) lead finishBlue color band indicates negative polarityQUADRO MINI MELFDimensions in inches and (millimeters)Maximum Ratings and Electrical CharacteristicsRating at 25o C ambient temperature unless otherwise specified.Type Number Symbol Value Units Power Dissipation Ptot500 mW Operating and Storage Temperature Range T J, T STG-65 to + 200 o CNotes: These ratings are limiting values above which the serviceability of the diode may be impairedVersion: B07Figure 1. Total Power Dissipation vs. Ambient TemperatureFigure 2. Typical Change of Working Voltage under OperatingConditions at T amb =25°CFigure 3. Typical Change of Working Voltage vs. JunctionTemperature1201600100300400500600P t o t - T o t a l P o w e r D i s s i p a t i o n (m W )T am b - Am b ient Temperat ure (°C)20020080401015201101001000V Z - V o l t a g e C h a n g e (m V )V Z - Z-V oltage (V )5- 60601201800.80.91.01.11.21.3V Z t n - R e l a t i v e V o l t a g e C h an g eT j - J u nction Temperat u re (°C)0Figure 4. Temperature Coefficient of Vz vs. Z-VoltageFigure 5. Diode Capacitance vs. Z-VoltageFigure 6. Forward Current vs. Forward Voltage30- 5051015V Z - Z-V oltage (V )504010200T K V Z - T e m p e r a t u r e C o e f f i c i e n t o f V Z (10-4/K )101550C D - D i o d e C a p a c i t a n c e (p F )V Z - Z-V oltage (V )20500.20.40.60.80.0010.010.1110100I F - F o r w a r d C u r r e n t (m A )V F - For w ard V oltage (V )Figure 7. Z-Current vs. Z-VoltageFigure 8. Z-Current vs. Z-Voltage820020406080I Z - Z -C u r r e n t (m A )4612V Z - Z-V oltage (V )152025300I Z - Z -C u r r e n t (m A )V Z - Z-Voltage (V )Figure 9. Differential Z-Resistance vs. Z-Voltage051015201101001000(Ω)V Z - Z-V oltage (V )r Z - D i f f e r e n t i a l Z -R e s i s t a n c e Figure 10. Thermal ResponseZ t h p - T h e r m a l R e s i s t a n c e f o r P u l s e C o n d . (K W )t P - P u lse Length (ms)10-1100101102ELECTRICAL CHARACTERISTICS (TA=25O C unless otherwise noted)Type Z ZT @ I ZT IR @ VR Number V Z V Z I ZT Ohms I ZK Z ZK @ I ZK uA VR Min (V)Max (V)mA Max mA Ohms MaxV BZT55B2V0 1.96 2.045100 1.060050 1.0BZT55B2V2 2.16 2.245100 1.060050 1.0BZT55B2V4 2.35 2.45585 1.060050 1.0BZT55B2V7 2.65 2.75585 1.060010 1.0BZT55B3V0 2.94 3.06585 1.06004 1.0BZT55B3V3 3.23 3.37585 1.06002 1.0BZT55B3V6 3.53 3.67585 1.06002 1.0BZT55B3V9 3.82 3.98585 1.06002 1.0BZT55B4V3 4.21 4.39575 1.06001 1.0BZT55B4V7 4.61 4.79560 1.06000.5 1.0BZT55B5V1 5.00 5.2535 1.05500.1 1.0BZT55B5V6 5.49 5.71525 1.04500.1 1.0BZT55B6V2 6.08 6.32510 1.02000.1 2.0BZT55B6V8 6.66 6.9458 1.01500.1 3.0BZT55B7V57.357.6557 1.0500.1 5.0BZT55B8V28.048.3657 1.0500.1 6.2BZT55B9V18.929.28510 1.0500.1 6.8BZT55B109.8010.2515 1.0700.17.5BZT55B1110.4011.22520 1.0700.18.2BZT55B1211.4012.24520 1.0900.19.1BZT55B1312.7413.26526 1.01100.110BZT55B1514.7015.30530 1.01100.111BZT55B1615.6816.32540 1.01700.112BZT55B1817.6418.36550 1.01700.113BZT55B2019.6020.40555 1.02200.115BZT55B2221.5622.44555 1.02200.116BZT55B2423.5224.48580 1.02200.118BZT55B2726.4627.54280 1.02200.120BZT55B3029.4030.60280 1.02200.122BZT55B3332.3433.66280 1.02200.124BZT55B3635.2836.72280 1.02200.127BZT55B3938.2239.782900.55000.128BZT55B4342.1443.862900.56000.132BZT55B4746.0647.9421100.57000.135BZT55B5149.9852.0221250.57000.138BZT55B5654.8857.1221350.510000.142BZT55B6260.7663.24 2.51500.510000.147BZT55B6866.6469.36 2.51600.510000.151BZT55B7573.5076.502.51700.510000.156VF Forward Voltage = 1.0v Maximum @ IF=100mA for all types.Notes: 1. The type numbers listed have zener voltage min/max limits as shown.2. The zener impedance is derived from the 60-cycle ac voltage, which results when an ac current having an rms value equal to 10% of the dc zener current (I ZT or I ZK ) is superimposed to I ZT or I ZK .Version: B 07(Volts)V Z @ I ZT。