MAC4DSN-001G中文资料

Publication Order Number: MAC4DSM/D
元器件交易网
MAC4DSM, MAC4DSN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, − Junction−to−Case − Junction−to−Ambient − Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes (Note 3)
Symbol
RqJC RqJA RqJA
TL
Max
Unit
3.5
°C/W
88
80
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Peak Gate Power
PGM
0.5
W
(Pulse Width ≤ 10 msec, TC = 108°C)
Average Gate Power (t = 8.3 msec, TC = 108°C)
PG(AV)
0.1
W
Peak Gate Current
IGM
0.2
A
(Pulse Width ≤ 10 msec, TC = 108°C)
MAC4DSMT4 MAC4DSMT4G
DPAK
DPAK (Pb−Free)
369C 369C
2500 / Tape & Reel 2500 / Tape & Reel
MAC4DSN−001 MAC4DSN−001G
DPAK−3
DPAK−3 (Pb−Free)
369D 369D
75 Units / Rail 75 Units / Rail
MT2(+), G(−)
MT2(−), G(−)
VTM
−
1.3 1.6
V
IGT
mA
2.9 4.0 10
2.9 5.0 10
2.9 7.0 10
VGT
V
0.5 0.7 1.3
0.5 0.65 1.3
0.5 0.7 1.3
VGD
0.2 0.4
−
V
IH
2.0 5.5 15
mA
IL
mA
−
6.0 30
−
10
30
MAC4DSNT4
DPAK
369C
2500 / Tape & Reel
MAC4DSNT4G
DPAK (Pb−Free)
369C
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
−
6.0 30
DYNAMIC CHARACTERISTICS
Characteristic
Symbol
Min Typ Max Unit
Rate of Change of Commutating Current (VD = 400 V, ITM = 3.5 A, Commutating dv/dt = 10 V/msec, Gate Open, TJ = 125°C, f = 500 Hz, CL = 5.0 mF, LL = 20 mH, No Snubber) See Figure 16
1
November, 2005 − Rev. 5

TRIACS 4.0 AMPERES RMS
600 − 800 VOLTS
MT2
MT1 G
12 3
4 DPAK
CASE 369C STYLE 6
MARKING DIAGRAMS
YWW AC
4DSxG
4
1 2 3
DPAK−3 CASE 369D
VDRM,
V
(Note 1) (TJ = −40 to 125°C, Sine
VRRM
Wave, 50 to 60 Hz, Gate Open)
MAC4DSM
600
MAC4DSN
800
On−State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 108°C)
Peak Gate Voltage
VGM
5.0
V
(Pulse Width ≤ 10 msec, TC = 108°C)
Operating Junction Temperature Range
TJ −40 to 125 °C
Storage Temperature Range
Tstg −40 to 150 °C
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
TJ = 25°C TJ = 125°C
MT2(−), G(−)
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Gate Non−Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)
50 175
−
V/ms
ORDERING INFORMATION Device
MAC4DSM−001 MAC4DSM−001G
Package Type
DPAK−3
DPAK−3 (Pb−Free)
Package 369D 369D
Shipping† 75 Units / Rail 75 Units / Rail
Features
• Small Size Surface Mount DPAK Package • Passivated Die for Reliability and Uniformity • Blocking Voltage to 800 V • On−State Current Rating of 4.0 Amperes RMS at 108°C • Low IGT − 10 mA Maximum in 3 Quadrants • High Immunity to dv/dt − 50 V/ms at 125°C • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B u 8000 V
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use and best overall value.
di/dt(c)
3.0 4.0
−
A/ms
Critical Rate of Rise of Off−State Voltage (VD = 0.67 X Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dv/dt
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8″ from case for 10 seconds. 4. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 msec)
IT(RMS)
4.0
A
IA2sec
Machine Model, C u 400 V
• Pb−Free Packages are Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage
Parameter Peak Repetitive Forward Off−State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off−State Voltage Peak Reverse Blocking Current Maximum On−State Voltage Holding Current