IRGIB10B60KD1

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
2/27/04
• Low VCE (on) Non Punch Through IGBT Technology.• Low Diode VF.
• 10µs Short Circuit Capability.• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175°C
Benefits
• Benchmark Efficiency for Motor Control.• Rugged Transient Performance.• Low EMI.
• Excellent Current Sharing in Parallel Operation.
IRGIB10B60KD1
PD-94576A
IRGIB10B60KD1
CES GE G
IRGIB10B60KD1
3
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Forward SOA T C = 25°C; T J ≤ 175°C Fig. 4 - Reverse Bias SOA T J = 150°C; V GE =15V
10
100
1000
V CE (V)
110
100
I C A
)
20
40
60
80100120140160180 T C (°C)
048
1216
20
I C (A
)
20
40
60
80100120140160180 T C (°C)
05
1015
202530354045
50P t o t (W
)
1
10
1001000
10000
V CE (V)
0.01
0.1
1
10100I C (A )
IRGIB10B60KD1
Fig. 6 - Typ. IGBT Output Characteristics
T J = 25°C; tp = 80µs
Fig. 5 - Typ. IGBT Output Characteristics
T J = -40°C; tp = 80µs Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 7 - Typ. IGBT Output Characteristics
T J = 150°C; tp = 80µs
02
46
V CE (V)
2468101214161820I C E (A )
2
46 V CE (V)
02468101214161820I C E (A )
2
4
6
V CE (V)
02468101214161820I C E (A )
0.00.5 1.0 1.5 2.0 2.5 3.0
V F (V)
510152025303540
I F (A
)
5
Fig. 10 - Typical V CE vs. V GE
T J = 25°C
Fig. 11 - Typical V CE vs. V GE
T J = 150°C Fig. 12 - Typ. Transfer Characteristics
V CE = 50V; tp = 10µs
5
10
15
20
V GE (V)
2468101214161820V C E (V )
5
10
15
20
V GE (V)
2468101214
161820V C E (V )
5
10
1520
V GE (V)
02468101214161820V C E (V )
5
1015
20
V GE (V)
10203040506070
8090100I C E (A )
IRGIB10B60KD1
Fig. 14 - Typ. Switching Time vs. I C T J = 150°C; L=1.07mH; V CE = 400V
R G = 50Ω; V GE = 15V
Fig. 13 - Typ. Energy Loss vs. I C T J = 150°C; L=1.07mH; V CE = 400V
R G = 50Ω; V GE = 15V Fig. 16 - Typ. Switching Time vs. R G T J = 150°C; L=1.07mH; V CE = 400V
I CE = 10A; V GE = 15V
Fig. 15 - Typ. Energy Loss vs. R G T J = 150°C; L=1.07mH; V CE = 400V
I CE = 10A; V GE = 15V 0
5
1015
20
I C (A)
0100200300400500600700E n e r g y (µJ )
100
200
300
400
500
R G (Ω)0200
400
600
800
1000E n e r g y (µJ )
5
10
15
20
I C (A)
110
100
1000
S w i c h i n g T i m e (n s )
0100200300400500
R G (Ω)
10
100
1000
10000
S w i c h i n g T i m e (n s )
IRGIB10B60KD1
7
Fig. 17 - Typical Diode I RR vs. I F
T J = 150°C Fig. 18 - Typical Diode I RR vs. R G
T J = 150°C; I F = 10A
Fig. 20 - Typical Diode Q RR V CC = 400V; V GE = 15V;T J = 150°C
Fig. 19- Typical Diode I RR vs. di F /dt
V CC = 400V; V GE = 15V;I CE = 10A; T J = 150°C
100
200
300
400
500
R G (Ω)
02
46
810
12
1416
I R R (A
)
200
400
600
di F /dt (A/µs)
024681012
14
16I R R (A
)
5
10
15
20
I F (A)
05
10
15
I R R (A )
100
200
300
400
500
600
di F /dt (A/µs)
0200
400
600
800
1000
Q R R
(n C )
IRGIB10B60KD1
Fig. 21 - Typical Diode E RR vs. I F
T J = 150°C
Fig. 23 - Typical Gate Charge vs. V GE
I CE = 10A; L = 2500µH
Fig. 22- Typ. Capacitance vs. V CE
V GE = 0V; f = 1MHz 0
5
10
15
20
25
I F (A)
40
80
120
160
200
E n e r g y (µJ )
1
10
100
V CE (V)
10
100
1000
C a p a c i t a n c e (p F
)
10
20
30
40
50
Q G , Total Gate Charge (nC)
024
681012
14
16
V
G E (V )
IRGIB10B60KD1
9
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
t 1 , Rectangular Pulse Duration (sec)
T h e r m a l R e s p o n s e ( Z )
t 1 , Rectangular Pulse Duration (sec)
T h e r m a l R e s p o n s e ( Z t h J C )
IRGIB10B60KD1
Fig.C.T.1 - Gate Charge Circuit (turn-off)Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5
- Resistive Load Circuit
R =
V CC I
IRGIB10B60KD1
11
@ T J = 150°C using Fig. CT.4@ T C = 150°C using Fig. CT.3
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903 Visit us at for sales contact information.2/04。