FFB2907A中文资料

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MMPQ2907A中文资料

50
PD - POWER DISSIPATION (W) 1
Power Dissipation vs Ambient Temperature
20 10 5
30 ns
0.75
SOT-6
t r = 15 V
0.5
2
60 ns
0.25
1 10
100 I C - COLLECTOR CURRENT (mA)
30 V
200 Ω
Ω 1.0 KΩ 0 - 16 V 50 Ω
≤ 200ns
FIGURE 1: Saturated Turn-On Switching Time Test Circuit
15 V
- 6.0 V
1 KΩ Ω
37 Ω
1.0 KΩ Ω 0 - 30 V ≤ 200ns 50 Ω
FIGURE 2: Saturated Turn-Off Switching Time Test Circuit
Max
FMB2907A 700 5.6 180 MMPQ2907A 1,000 8.0 125 240
Units
mW mW/°C °C/W °C/W °C/W
© 1998 Fairchild Semiconductor Corporation
元器件交易网
FFB2907A / FMBT2907A / MMPQ2907A
TA = 25°C unless otherwise noted
Parameter
Value
60 60 5.0 600 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range

hdp2907m电源

海信先后开发了ASIC, MST, GENESIS- I , GENESIS- II , HY60, TRIDENT, PHILIPS高清机芯，NDSP, PHILIPS, SIEMENS倍频机芯和TDR2918倍频彩电。

其开关电源先后采用厚膜电路5Q1265RF,KACQ1265, KA3S0680R, STR-F6656, TNY253P, STR-G9656和振荡控制电路TDA4605 - 3、待机与低压控制电路KA7630。

上述开关电源的简介维修资料如下。

1. ASIC, MST高清机芯开关电源简介海信ASIC机芯高清彩电的数字视频解码电路采用TVP5147, D-A转换电路采用MST9883，倍频信号处理电路采用VPEIX, RGB信号混合处理和行场扫描电路采用OM8380H，视频解码芯片采用HISENSEDTV, HY57 V643220，末级视频放大电路采用TDA6111 Q，场输出集成电路为TDA8177，音频信号处理电路采用TDA7439，伴音功率放大集成电路为TDA7497 0海信MST机芯高清彩电采用MST公司5C16解码方案。

总线系统微处理器采用MM502，解码芯片采用M61266FP，倍频芯片采用MST5C16，视频信号和行场扫描信号处理电路采用TDA9333 H，末级视频放大电路采用LM2425，场输出集成电路为TDA8177，音频信号处理电路采用TDA7439伴音功率放大集成电路为TDA7495或TDA7497，电源模块集成电路为5 Q 1265 RF等。

海信ASIC, MST机芯高清彩电的开关电源基本相同，均设置在行场扫描大电路板上。

开关电源一次电路以5QI265RF新型厚膜电路（N801）为核芯，为并联型开关电源，二次低压供电稳压和开关机控制电路采用KA7630 （N804），为行输出电路提供B＋电压，为数字板和小信号处理电路提供15V, 7.5V电压和受控的12V, 8V, 5V-2电压，为伴音功率放大电路提供32V电压。

FFB2907A;FFB2907A_D87Z;中文规格书,Datasheet资料

/
FFB2907A / FMB2907A / MMPQ2907A
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
VCESAT - COLLECTOR EMITTE R VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain vs Collector Current
500
VCE = 5V
Collector-Emitter Saturation Voltage vs Collector Current
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector-Emitter Voltage
0.5 β = 10 0.4 0.3 0.2 0.1 0
125 °C - 40 °C
400 300 200 100 0 0.1
125 °C
25 °C
25 °C
- 40 °C
0.3
1 3 10 30 100 I C - COLLECTOR CURRENT (mA)
300
1
10 100 I C - COLLECTOR CURRE NT (mA)
Max
FMB2907A 700 5.6 180 MMPQ2907A 1,000 8.0 125 240

PZT2907A中文资料

500
V BE( ON)- BAS E EMITTER ON VOLTAGE (V)
V BESAT - BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
1
- 40 °C
Base Emitter ON Voltage vs Collector Current
300 0.4 1.6 1.3 2.6 V V V V
VCE(sat) VBE(sat)
Collector-Emitter Saturation Voltage* Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
fT Cobo Cibo Current Gain - Bandwidth Product Output Capacitance Input Capacitance IC = 50 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, IE = 0, f = 100 kHz VEB = 2.0 V, IC = 0, f = 100 kHz 200 8.0 30 MHz pF pF
1998 Fairchild Semiconductor Corporation
元器件交易网
PN2907A / MMBT2907A / PZT2907A
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
PN2907A / MMBT2907A / PZT2907A
PNP General Purpose Amplifier

MMBT2907A-7-F;MMBT2907A-7;中文规格书,Datasheet资料

60V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23Features• Epitaxial Planar Die Construction• Complementary NPN Type Available (MMBT2222A) • Ideal for Low Power Amplification and Switching • Lead Free, RoHS Compliant (Note 1)• Halogen and Antimony Free "Green" Device (Note 2) • Qualified to AEC-Q101 Standards for High ReliabilityMechanical Data• Case: SOT23 • Case Material: molded Plastic, “Green” Compound • UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Matte Tin Finish • Weight: 0.008 grams (approximate)Ordering Information (Note 3 & 4)ProductGradeMarkingReel size (inches) Tape width (mm)Quantity per reelMMBT2907A-7-F Commercial K2F 7 8 3,000 MMBT2907A-13-F Commercial K2F 13 8 10,000 MMBT2907AQ-7-F AutomotiveK2F783,000Notes:1. No purposefully added lead.2. Diodes Inc's "Green" policy can be found on our website at 3. For packaging details, go to our website at .4. Products with Q-suffix are automotive grade. Automotive products are electrical and thermal the same as the commercial, except where specifiedMarking InformationDate Code KeyYear 2010 2011 2012 2013 2014 2015 2016 2017Code X Y Z A B C D EMonthJanFebMar AprMay Jun Jul Aug Sep Oct Nov Dec Code1 2 3 4 5 6 7 8 9 O N DTop ViewSOT23Device SymbolTop ViewPin-OutK2F = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011)M = Month (ex: 9 = September)K2FY MMaximum Ratings @T A = 25°C unless otherwise specifiedCharacteristicSymbol Value Unit Collector-Base Voltage V CBO -60 V Collector-Emitter Voltage V CEO -60 V Emitter-Base VoltageV EBO -5.0 V Collector Current - Continuous I C -600 mAPeak Collector Current I CM-800 mAThermal Characteristics @T A = 25°C unless otherwise specifiedCharacteristicSymbol ValueUnit Power Dissipation (Note 5)P D 300 mW Thermal Resistance, Junction to Ambient (Note 5) R θJA 417 °C/W Thermal Resistance, Junction to Lead (Note 6) R θJL 350 °C/W Operating and Storage and Temperature RangeT J , T STG -55 to +150 °CNotes:5. For a device surface mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air conditions; the device is measured when operating in a steady-state condition.6. Thermal resistance from junction to solder-point (at the end of the collector lead).P , P O W E R D I S S I P A T I O N (m W )D T , AMBIENT TEMPERATURE (°C)Fig. 1 Power Dissipation vs. Ambient TemperatureAElectrical Characteristics @T A = 25°C unless otherwise specifiedCharacteristicSymbol Min Max Unit Test ConditionOFF CHARACTERISTICS (Note 7) Collector-Base Breakdown Voltage V (BR)CBO -60 ⎯ V I C = -10μA, I E = 0 Collector-Emitter Breakdown Voltage V (BR)CEO -60 ⎯ V I C = -10mA, I B = 0 Emitter-Base Breakdown Voltage V (BR)EBO -5.0 ⎯ V I E = -10μA, I C = 0 Collector Cutoff CurrentI CBO ⎯ -10 nA μA V CB = -50V, I E = 0V CB = -50V, I E = 0, T A = 125°C Collector Cutoff Current I CEX ⎯ -50 nA V CE = -30V, V EB(OFF) = -0.5V Base Cutoff CurrentI BL⎯ -50 nAV CE = -30V, V EB(OFF) = -0.5V ON CHARACTERISTICS (Note 7)DC Current Gainh FE 75 100 100 100 50 ⎯ ⎯ ⎯ 300 ⎯ ⎯I C = -100µA, V CE = -10V I C = -1.0mA, V CE = -10V I C = -10mA, V CE = -10V I C = -150mA, V CE = -10V I C = -500mA, V CE = -10V Collector-Emitter Saturation Voltage V CE(SAT) ⎯ -0.4 -1.6 V I C = -150mA, I B = -15mA I C = -500mA, I B = -50mA Base-Emitter Saturation Voltage V BE(SAT) ⎯ -1.3 -2.6 V I C = 150mA, I B = 15mA I C = 500mA, I B = 50mA SMALL SIGNAL CHARACTERISTICS Output Capacitance C obo ⎯ 8.0 pF V CB = -10V, f = 1.0MHz, I E = 0 Input CapacitanceC ibo — 30 pF V EB = -2.0V, f = 1.0MHz, I C = 0 Current Gain-Bandwidth Product f T 200 ⎯ MHz V CE = -20V, I C = -50mA, f = 100MHzSWITCHING CHARACTERISTICS Turn-On Time t off ⎯ 45 nsV CC = -30V, I C = -150mA, I B1 = -15mADelay Time t d ⎯ 10 ns Rise Time t r ⎯ 40 ns Turn-Off Time t off ⎯ 100 ns V CC = -6.0V, I C = -150mA, I B1 = I B2 = -15mAStorage Time t s ⎯ 80 ns Fall Timet f⎯30nsNotes: 7. Short duration pulse test used to minimize self-heating effect.1,000100h , D C C U R R E N T G A I NF E I , COLLECTOR CURRENT (mA)Fig. 2 Typical DC Current Gain vs. Collector Current CV , B A S E -E M I T T E R S A T U R A T I O N V O L T A G E (V )B E (O N )I , COLLECTOR CURRENT (mA)Fig. 4 Typical Base-Emitter Saturation Voltagevs. Collector CurrentCI , COLLECTOR CURRENT (mA)Fig. 3 Typical Collector-Emitter Saturation Voltagevs. Collector CurrentC V , C O L L E C T O R -E M I T T E RS A T U R A T I O N V O L T A G E (V )C E (S A T )f , G A I N -B A N D W I D T H P R O D U C T (M H z )T I , COLLECTOR CURRENT (mA)Fig. 6 Typical Gain-Bandwidth Product vs. Collector Current CI , BASE CURRENT (mA)Fig. 7 Typical Collector Saturation Region B V , C O L L E C T O R -E M I T T E RV O L T A G E (V )CE C A P A C I T A N C E (pF )V , REVERSE VOLTAGE (V)Fig. 5 Typical R Capacitance Characteristics25246141618Package Outline DimensionsSuggested Pad LayoutSOT23Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.0130.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.0850.18 0.11α0° 8° - All Dimensions in mmDimensions Value (in mm)Z 2.9 X 0.8 Y 0.9C2.0 E1.35 X EYCZIMPORTANT NOTICEDIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages.Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.LIFE SUPPORTDiodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:A. Life support devices or systems are devices or systems which:1. are intended to implant into the body, or2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in thelabeling can be reasonably expected to result in significant injury to the user.B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause thefailure of the life support device or to affect its safety or effectiveness.Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.Copyright © 2011, Diodes Incorporated分销商库存信息:DIODESMMBT2907A-7-F MMBT2907A-7。

ROHM UMT2907A SST2907A MMST2907A 说明书

TransistorsRev.B 1/4PNP Medium Power Transistor (Switching)UMT2907A / SST2907A / MMST2907Az Features1) BV CEO < -60V (I C =-10mA)2) Complements the UMT2222A / SST2222A / MMST2222A.z Package, marking and packaging specificationsPart No.UMT2907A UMT3R2F T1063000SST2907A SST3R2F T1163000MMST2907A SMT3R2F T1463000Packaging typeMarking CodeBasic ordering unit(pieces)z Absolute maximum ratings (T a=25°C)UMT2907A, SST2907A, MMST2907A ParameterSymbol V V V I Tj TstgLimits −60−60−5−0.6150−55 to +150Unit V V V A P 0.2W W ∗∗ Mounted on a 7x 5x 0.6mm ceramic substrate.SST2907A 0.35°C °CCollector-base voltage Collector-emitter voltage Emitter-base voltage Collector currentCollector powerdissipation Junction temperature Storage temperaturez Dimensions (Unit : mm)z Electrical characteristics (T a=25°C)ParameterSymbol Min.Typ.Max.Unit ConditionsBV CBO BV CEO BV EBO I CBO I EBO −−−−−−−−−100−100V V V nA nA I C = −10µA I C = −10mA I E = −10µA V CB = −50V I CES −−100V CB = −30V V EB = −3V−−2.6V BE(sat)−−1.3V−−1.6I C /I B = −500mA/ −50mA V CE(sat)−−0.4V I C /I B = −150mA/ −15mA I C /I B = −500mA/ −50mA I C /I B = −150mA/ −15mA −300h FE−−−−−−−V CE = −10V, I C = −0.1mA V CE = −10V, I C = −1mA V CE = −10V, I C = −10mA V CE = −10V, I C = −150mA −−V CE = −10V, I C = −500mAf T Cob −−−8MHz pF V CE = −20V, I E =50mA, f=100MHz V CB = −10V, f=100kHz Cib −30pF V EB = −2V, f=100kHzton −50ns V CC = −30V, V BE(OFF)= −1.5V, I C = −150mA, I B1= −15mA td −10ns V CC = −30V, V BE(OFF)= −1.5V, I C = −150mA, I B1= −15mA V CC = −30V, V BE(OFF)= −1.5V, I C =− 150mA, I B1= −15mA tr −40ns V CC = −30V, I C = −150mA, I B1=I B2= −15mA toff −100ns tstg −80ns V CC = −30V , I C = −150mA, I B1=I B2= −15mA V CC = −30V, I C = −150mA, I B1=I B2= −15mAtf−60−60−5−−−−−−−1001001007550200−−−−−−−−−30ns Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff currentBase-emitter saturation voltageCollector-emitter saturation voltage DC current transfer ratioTransition frequency Collector output capacitance Emitter input capacitance Turn-on time Delay time Rise time Turn-off time Storage time Fall timeTransistorsRev.B 2/4z Electrical characteristic curvesC O L L E C T O R C U R R E N T : I C(m A )COLLECTOR-EMITTER VOLTAGE : V CE (V)Fig.1 Grounded emitter outputcharacteristicsB A S E -E M I T T E R S A T U R AT I O N V O L T A G E : V B E (s a t ) (V )COLLECTOR CURRENT : I C (mA)Fig.2 Base-emitter saturationvoltage vs. collector currentD C C U R RE N T G A I N : hF ECOLLECTOR CURRENT : I C (mA)Fig.3 DC current gain vs. collector current ( I )D C C U R RE N T G A I N : hF ECOLLECTOR CURRENT : I C (mA)Fig.4 DC current gain vs. collector current ( II )TransistorsRev.B 3/4A C C U R R E N T G A I N : h F ECOLLECTOR CURRENT : I C (mA)Fig.5 AC current gain vs. collector currentC O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E : V C E(s a t ) (V )COLLECTOR CURRENT : I C (mA)Fig.6 Collector-emitter saturationvoltage vs. collector currentB A S E -E M I T T E R O N V OL T A G E : V B E (o n ) (V )COLLECTOR CURRENT : I C (mA)Fig.7 Grounded emitter propagationcharacteristicsC U R R E N T G A I N -B A ND W I D T H P R O DU C T : f T (M H z )COLLECTOR CURRENT : I C (mA)Fig.8 Gain bandwidth productvs. collector currentC OL L E C T O R -E M I T T E R V O L T A G E : V C E (V )COLLECTOR CURRENT : I C (mA)Fig.9 Gain bandwidth productC A P A C I T A N C E (p F )REVERSE BIAS VOLTAGE (V)Fig.10 Input/output capacitancevs. voltageT U R N O N T I M E : t o n (n s )COLLECTOR CURRENT : I C (mA)Fig.11 Turn-on time vs.collectorcurrentR I S E T I M E : t r (n s )COLLECTOR CURRENT : I C (mA)Fig.12 Rise time vs. collectorcurrentTransistorsRev.B 4/4S T O R A G E T I M E : t s (n s )COLLECTOR CURRENT : I C (mA)Fig.13 Storage time vs. collectorcurrentF A L L T I M E : t f (n s )COLLECTOR CURRENT : I C (mA)Fig.14 Fall time vs. collectorcurrentAppendix1-Rev2.0Thank you for your accessing to ROHM product informations.More detail product informations and catalogs are available, please contact your nearest sales office.ROHM Customer Support SystemTHE AMERICAS / EUPOPE / ASIA / JAPANContact us : webmaster@rohm.co.jpAppendix。

MPS2907A三极管

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsMPS2907ATRANSISTOR (PNP)FEATURESComplementary NPN Type available (MPS2222A)MAXIMUM RATINGS (T a =25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbolT est conditionsM in T yp Max UnitCollector-base breakdown voltage V (BR)CBOI C =-10μA,I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEOI C =-10mA,I B =0 -60 V Emitter-base breakdown voltage V (BR)EBO I E =-10μA,I C =0 -5 V Collector cut-off current I CBOV CB =-50V,I E =0 -10 n A Collector cut-off current I CEXV CE =-30V,V EB(off)=-0.5V -50 nAEmitter cut-off current I EBO V EB =-3V,I C =0 -10 nA h FE(1) V CE =-10V,I C =-0.1mA 78h FE(2)V CE =-10V,I C =-150mA 100 300DC current gainh FE(3) V CE =-10V,I C =-500mA 52 V CE(sat) I C =-150mA,I B =-15mA -0.4 VCollector-emitter saturation voltage V CE(sat) I C =-500mA,I B =-50mA -0.67 V V BE(sat) I C =-150mA,I B =-15mA -1 V Base-emitter saturation voltage V BE(sat) I C =-500mA,I B =-50mA -1.2 V Transition frequency f T V CE =-20V,I C =-50mA,f=100MHz 200 MHzDelay time t d10 n sRise time t rI B1=-I B2=-15mAV CC =-30V,Ic=-150mA, 25 n s Storage time t S225 n s Fall timet fV CC =-6V,Ic=-150mA, I B1=-I B2=-15mA60 n sCLASSIFIC A TION OF h FE(2)Ra n k LHRa n ge100-200 200-300TO-921. EMITTER2. BASE3. COLLECTORB ,Jul ,2012【南京南山半导体有限公司 — 长电三极管选型资料】-10-1000100200300400500255075100125150-0.1-1-10-100-0.01-0.1-1-0-40-80-120-160-200h FE —— -4T R A N S I T I O N F R E Q U E N C Y f T (M H z )COLLECTOR CURRENT I C (mA)MPS2907ATypical CharacterisiticsI CAMBIENT TEMPERATURE T a ()℃-600C O L L E C T O R C U R R E N T I C (m A )C O L L E C T O R -E M I T T E R S A T U R A T I O NV O L T A G E V C E s a t (V )Static CharacteristicC O L L E C T O R C U R R E N T I C (m A )B ,Jul ,2012 【南京南山半导体有限公司 — 长电三极管选型资料】【南京南山半导体有限公司 — 长电三极管选型资料】Sponge strip2000 pcsSponge strip The top gasketLabel on the Inner BoxPlastic bagLabel on the Outer BoxInner Box: 333 mm ×162mm ×43mmOuter Box: 350 mm × 340mm × 250mmQA LabelSeal the box with the tapeStamp “EMPTY” on the empty boxInner Box: 240 mm ×165mm ×９５mmLabel on the Inner BoxOuter Box: 525 mm × 360mm × 262mmLabel on the Outer BoxQA LabelSeal the box with the tapeStamp “EMPTY” on the empty box。

IRFP2907资料

ID = 125A VDS = 60V VDS = 37V
16
C, Capacitance(pF)
Ciss
12000
12
8000
8
4000
Coss Crss
1 10 100
4
0
0 0 100 200 300
FOR TEST CIRCUIT SEE FIGURE 13
°C/W
2014-8-14
1

IRFP2907
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff.
IRFP2907
TO-247AC
Typical Applications
q q
Integrated Starter Alternator 42 Volts Automotive Electrical Systems
Benefits
q q q q q q
Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
Repetitive rating; pulse width limited by

KSP2907A

ww w.Ch in ad z.C om KSP2907A PNP EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTOR• Collector-Emitter Voltage: V CEO = 60V • Collector Dissipation: P C (max)=625mWABSOLUTE MAXIMUM RATINGS (T A =25 )• Refer to KSP2907 for graphsELECTRICAL CHARACTERISTICS (T A =25 )%Pulse Test: Pulse Width 300s , Duty Cycle 2%CharacteristicSymbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature V CBO V CEO V EBO I C P C T J T STG-60-60-5-600625150-55~150V V V mA mW &&CharacteristicSymbol Test ConditionsMinTypMaxUnit Collector-Base Breakdown Voltage %Collector Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current DC Current Gain%Collector-Emitter Saturation VoltageBase Emitter Saturation Voltage Output Capacitance%Current Gain Bandwidth ProductTurn On Time Turn Off TimeBV CBO BV CEO BV EBO I CBO h FEV CE (sat)V CE (sat)C OB f T t ON t OFFI C = -10}, I E =0I C = -10mA, I B =0 I E = -10}, I C =0 V CB = -50V, I E =0I C = -0.1mA, V CE = -10V I C = -1mA, V CE = -10V I C = -10mA, V CE = -10V %I C = -150mA, V CE = -10V %I C = -500mA, V CE = -10V I C = -150mA, I B = -15mA I C = -500mA, I B = -50mA I C = -150mA, I B = -15mA I C = -500mA, I B = -50mA V CB = -10V, I E =0 f=1MHzI C = -50mA, V CE = -20VV CC = -30V, I C = -150mA I B1= -15mAV CC = -6V, I C = -150mA I B1=I B2=15mA-60-40-57510010010050200-10300-0.4-1.6-1.3-2.6845100VV V nAV V V V pF MHzns nsTO-921. Emitter2. Base3. Collector©1999 Fairchild Semiconductor CorporationRev. BFree Datasheet Download ww w.Ch in ad z.C om TRADEMARKSACEx™CoolFET™CROSSVOLT™E 2CMOS TM FACT™FACT Quiet Series™FAST ®FASTr™GTO™HiSeC™The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.As used herein:ISOPLANAR™MICROWIRE™POP™PowerTrench™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8TinyLogic™1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a lifesupport device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationPreliminaryNo Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative orIn DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.UHC™VCX™Free Datasheet Download 。

irf2907场效应管参数

IRF2907场效应管参数1. 引言IRF2907是一种N沟道场效应管（MOSFET），广泛应用于电子设备和电路中。

本文将介绍IRF2907场效应管的参数，包括其基本特性、电气参数和应用。

2. 基本特性IRF2907是一种功率MOSFET，具有以下基本特性：•极高的开关速度：IRF2907具有快速的开关速度，能够实现高效率的功率转换。

•低导通电阻：IRF2907的导通电阻很低，能够提供较大的电流输出。

•高耐压能力：IRF2907能够承受较高的电压，适用于高压应用场合。

3. 电气参数IRF2907的电气参数对于设计和应用非常重要。

以下是IRF2907的一些主要电气参数：•额定电流（ID）：IRF2907的额定电流为75安培，表示在额定条件下，可以通过的最大电流。

•额定电压（VDS）：IRF2907的额定电压为75伏特，表示在额定条件下，可以承受的最大电压。

•阈值电压（VGS(th)）：IRF2907的阈值电压为2-4伏特，表示在场效应管导通之前，需要施加的门极电压。

•导通电阻（RDS(on)）：IRF2907的导通电阻为0.02欧姆，表示在导通状态下，场效应管的电阻大小。

4. 应用IRF2907常用于功率放大、开关和调节电路中。

以下是一些IRF2907的应用示例：4.1 功率放大器IRF2907可以作为功率放大器的输出级，将输入信号放大到较大功率输出。

其低导通电阻和高耐压能力使其适用于高功率放大应用。

4.2 开关电路IRF2907可用于开关电路中，实现电路的开关功能。

其快速的开关速度和低导通电阻使其适用于高效率的开关电源设计。

4.3 调节电路IRF2907还可用于调节电路中，通过控制场效应管的导通状态来实现电路的调节功能。

其阈值电压和导通电阻的参数特性使其适用于精确的电路调节。

5. 总结IRF2907是一种常用的N沟道场效应管，具有快速的开关速度、低导通电阻和高耐压能力。

其电气参数包括额定电流、额定电压、阈值电压和导通电阻等。

MPS2907三极管

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDTO-92 Plastic-Encapsulate TransistorsTRANSISTOR (PNP) FEATURESComplementary NPN Type available (MPS2222)ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditionsM inT yp Max UnitCollector-base breakdown voltage V (BR)CBO I C =-10μA,I E =0 -60 VCollector-emitter breakdown voltage V (BR)CEO I C =-10mA,I B =0 -40 VEmitter-base breakdown voltage V (BR)EBO I E =-10μA,I C =0 -5 VCollector cut-off current I CBO V CB =-50V,I E =0 -10 n ACollector cut-off current I CEX V CE =-30V,V EB(off)=-0.5V -50 nAEmitter cut-off current I EBO V EB =-3V,I C =0 -10 nAh FE(1) V CE =-10V,I C =-0.1mA 52h FE(2) V CE =-10V,I C =-150mA 100 300DC current gainh FE(3)V CE =-10V,I C =-500mA 32V CE(sat) I C =-150mA,I B =-15mA -0.4 VCollector-emitter saturation voltage V CE(sat) I C =-500mA,I B =-50mA -0.67 VV BE(sat) I C =-150mA,I B =-15mA -1 V Base-emitter saturation voltage V BE(sat) I C =-500mA,I B =-50mA -1.2 VTransition frequency f T V CE =-20V,I C =-50mA,f =100MHz 200 MHzDelay time t d 10 nS Rise time t r V CC =-30V,Ic=-150mA,I B1=-15mA 25 nS Storage time t S 225 nS Fall timet f V CC =-6V,Ic=-150mA,I B1=I B2=-15mA60 nSCLASSIFICATION OF h FE(2)Rank LHRange100-200 200-300TO-921.EMITTER2.BASE3. COLLECTORA,June,2011 【南京南山半导体有限公司 — 长电三极管选型资料】Sponge strip2000 pcsSponge strip The top gasketLabel on the Inner BoxPlastic bagLabel on the Outer BoxInner Box: 333 mm ×162mm ×43mmOuter Box: 350 mm × 340mm × 250mmQA LabelSeal the box with the tapeStamp “EMPTY” on the empty boxInner Box: 240 mm ×165mm ×９５mmLabel on the Inner BoxOuter Box: 525 mm × 360mm × 262mmLabel on the Outer BoxQA LabelSeal the box with the tapeStamp “EMPTY” on the empty box。

MMBT2907A贴片三极管规格书

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR (PNP) FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) Marking: 2FELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified) ParameterSymbol Test conditions M in T yp M ax U nit Collector-base breakdown voltageV (BR)CBO I C =-10μA,I E =0 -60 V Collector-emitter breakdown voltageV (BR)CEO* I C =-10mA,I B =0 -60 V Emitter-base breakdown voltageV (BR)EBO I E =-10μA,I C =0 -5 V Collector cut-off currentI CBO V CB =-50V,I E =0 -20 nA Base cut-off currentI EBO V E B =-3V, I C =0 -10 nA Collector cut-off current I CEXV CE =-30 V, V BE(off) =-0.5V -50 nA h FE(1)V CE =-10V,I C =-150mA 100 300 h FE(2) V CE =-10V,I C =-0.1mA 75h FE(3) V CE =-10V,I C =-1mA 100h FE(4) V CE =-10V,I C =-10mA 100DC current gain h FE(5) V CE =-10V,I C =-500mA 50 V CE(sat)*I C =-150mA,I B =-15mA -0.4 V Collector-emitter saturation voltage V CE(sat)*I C =-500mA,I B =-50mA -1.6 V V BE(sat)*I C =-150mA,I B =-15mA -1.3 V Base-emitter saturation voltage V BE(sat)*I C =-500mA,I B =-50mA -2.6 V Transition frequencyf T V CE =-20V,I C =-50mA,f =100MHz 200 MHz Delay timet d 10 n s Rise timet r V CE =-30V,I C =-150mA,B1=-15mA 25 n s Storage timet S 225 n s Fall timet f V CE =-6V,I C =-150mA, I B1=- I B2=- 15mA 60 n s *Pulse test: t p ≤300μs , δ≤0.02. SOT-232. EMITTER3. COLLECTOR C,Oct,2012 【南京南山半导体有限公司 — 长电贴片三极管选型资料】-0.1-1-10-100025507510012515050100150200250300-0.0-0.3-0.6-0.9-0.00-0.05-0.10-0.15-0.20-0.25I C MMBT2907A Typical Characterisitics-600CO L L E C T O R C U R R E N T I C(m A )CO LL E C T O R P O W E R D I S S I P A T IO NPc(mW)AMBIENT TEMPERATURE T a ()℃h FE —— C O L L E C T O R -E M I T T E R S A T U R A T I O N VOLT A GEV C Esat(V )Static CharacteristicC O L L E C T O R C U R R E N T I C(A ) 【南京南山半导体有限公司 — 长电三极管选型资料】The bottom gasketThe top gasket3000×1 PCS 3000×15 PCS Label on the Reel Label on the Inner Box Label on the Outer Box QA Label Seal the boxwith the tape Seal the boxwith the tape Stamp “EMPTY”on the empty box Inner Box: 210 mm × 208 mm ×203 mm Outer Box: 440 mm × 440 mm × 230 mm。

W2F PMBT2907A贴片三极管

Product data sheet Supersedes data of 1999 Apr 272004 Jan 16PNP switching transistorsPMBT2907; PMBT2907AFEATURES•High current (max. 600 mA)•Low voltage (max. 60 V).APPLICATIONS•Switching and linear amplification.DESCRIPTIONPNP switching transistor in a SOT23 plastic package. NPN complements: PMBT2222 and PMBT2222A. MARKINGNote1.* = p : Made in Hong Kong.* = t : Made in Malaysia.* = W: Made in China.PINNINGTYPE NUMBER MARKING CODE(1) PMBT2907*2BPMBT2907A*2F PIN DESCRIPTION 1base2emitter3collectorORDERING INFORMATIONTYPE NUMBERPACKAGENAME DESCRIPTION VERSIONPMBT2907−plastic surface mounted package; 3 leads SOT23 PMBT2907A−plastic surface mounted package; 3 leads SOT23PNP switching transistors PMBT2907; PMBT2907ALIMITING VALUESIn accordance with the Absolute Maximum Rating System (IEC 60134).SYMBOL PARAMETER CONDITIONS MIN.MAX.UNIT V CBO collector-base voltage open emitter−−60VV CEO collector-emitter voltage open basePMBT2907−−40VPMBT2907A−−60VV EBO emitter-base voltage open collector−−5VI C collector current (DC)−−600mAI CM peak collector current−−800mAI BM peak base current−−200mAP tot total power dissipation T amb≤ 25 °C−250mW T stg storage temperature−65+150°CT j junction temperature−150°CT amb operating ambient temperature−65+150°CTHERMAL CHARACTERISTICSSYMBOL PARAMETER CONDITIONS VALUE UNIT R th(j-a)thermal resistance from junction to ambient note 1500K/W Note1.Transistor mounted on an FR4 printed-circuit board.PNP switching transistors PMBT2907; PMBT2907ACHARACTERISTICST j = 25 °C unless otherwise specified.SYMBOL PARAMETER CONDITIONS MIN.MAX.UNIT I CBO collector-base cut-off current I E = 0; V CB = −50 VPMBT2907−−20nAPMBT2907A−−10nAcollector-base cut-off current I E = 0; V CB = −50 V; T j = 125 °CPMBT2907−−20µAPMBT2907A−−10µAI EBO emitter-base cut-off current I C = 0; V EB = −5 V−−50nAh FE DC current gain I C = −0.1 mA; V CE = −10 VPMBT290735−PMBT2907A75−DC current gain I C = −1 mA; V CE = −10 VPMBT290750−PMBT2907A100−DC current gain I C = −10 mA; V CE = −10 VPMBT290775−PMBT2907A100−DC current gain I C = −150 mA; V CE = −10 V100300DC current gain I C = −500 mA; V CE = −10 VPMBT290730−PMBT2907A50−V CEsat collector-emitter saturationvoltage I C = −150 mA; I B = −15 mA−−400mV I C = −500 mA; I B = −50 mA−−1.6VV BEsat base-emitter saturation voltage I C = −150 mA; I B = −15 mA−−1.3VI C = −500 mA; I B = −50 mA−−2.6VC c collector capacitance I E = I e = 0; V CB = −10 V; f = 1 MHz−8pF C e emitter capacitance I C = I c = 0; V EB = −2 V; f = 1 MHz−30pF f T transition frequency I C = −50 mA; V CE = −20 V; f = 100 MHz200−MHz Switching times (between 10% and 90% levels); (see Fig.2)t on turn-on time I Con = −150 mA; I Bon = −15 mA;I Boff = 15 mA −40nst d delay time−12ns t r rise time−30ns t off turn-off time−365ns t s storage time−300ns t f fall time−65nsPNP switching transistors PMBT2907; PMBT2907APNP switching transistors PMBT2907; PMBT2907A PACKAGE OUTLINEPNP switching transistorsPMBT2907; PMBT2907ADATA SHEET STATUSNotes1.Please consult the most recently issued document before initiating or completing a design.2.The product status of device(s) described in this document may have changed since this document was publishedand may differ in case of multiple devices. The latest product status information is available on the Internet at URL . DOCUMENT STATUS (1)PRODUCT STATUS (2)DEFINITIONObjective data sheet Development This document contains data from the objective specification for product development.Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet ProductionThis document contains the product specification.DISCLAIMERSGeneral ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties,expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to informationpublished in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at the customer’s own risk.Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at /profile/terms, including those pertaining to warranty, intellectual property rightsinfringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.Export control ⎯ This document as well as the item(s) described herein may be subject to export controlregulations. Export might require a prior authorization from national authorities.Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.NXP SemiconductorsCustomer notificationThis data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outlinedrawings which were updated to the latest version.Contact informationFor additional information please visit: For sales offices addresses send e-mail to: salesaddresses@© NXP B.V. 2009All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.Printed in The Netherlands R75/05/pp8 Date of release: 2004 Jan 16Document order number: 9397 750 12459。

KSP2907A中文资料

KSP2907A PNP General Purpose AmplifiertmSeptember 2006KSP2907APNP General Purpose AmplifierFeatures•Collector-Emitter Voltage: V CEO = 60V•Collector Power Dissipation: P C (max)=625mW•Suffix “-C” means a Center Collector (1.Emitter 2.Collector 3.Base)•Non suffix “-C” means a Side Collector (1.Emitter 2.Base 3.Collector)•Available as PN2907AAbsolute Maximum Ratings * T a= 25°C unless otherwise noted* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.Thermal Characteristics T a=25°C unless otherwise notedNote1. Infinite heat sink.Note2. Minimum Land pad size.Electrical Characteristics * T a= 25°C unless otherwise noted* DC Item are tested by Pulse Test: Pulse Width ≤300us, Duty Cycle ≤2%SymbolParameterValueUnitsV CBO Collector-Base Voltage -60V V CEO Collector-Emitter Voltage -60V V EBO Emitter-Base Voltage -5V I C Collector current-600mA T J Junction Temperature +150°C T stgStorage Temperature-55 ~ +150°CSymbolParameterMaxUnitsP C Collector Power Dissipation, by R θJA625mW R θJC Thermal Resistance, Junction to Case(note1)83.3°C/W R θJAThermal Resistance, Junction to Ambient(note2)200°C/WSymbolParameterTest ConditionMin.Typ.Max.UnitsV (BR)CBO Collector-Base Breakdown Voltage I C = -10µA, I E = 0-60V V (BR)CEO Collector-Emitter Breakdown Voltage I C = -10mA, I B = 0-60V V (BR)EBO Emitter-Base Breakdown Voltage I E = -10µA, I C = 0-5.0V I CBO Collector Cutoff Current V CB = -50V, I E = 0-10nAh FEDC Current GainV CE = -10V, I C = -0.1mA, V CE = -10V, I C = -1mA, V CE = -10V, I C = -10mA, V CE = -10V, I C = -150mA, V CE = -10V, I C = -500mA, 7510010010050300V CE(sat)Collector-Emitter Saturation Voltage I C = -150mA, I B = -15mA I C = -500mA, I B = -50mA -0.4-1.6V V V BE(sat)Base-Emitter Saturation Voltage I C = -150mA, I B = -15mA I C = -500mA, I B = -50mA-1.3-2.6V V C obo Output CapacitanceV CB = -10V, I E = 0, f = 1.0MHz 8pF f T Current Gain Bandwidth Product I C = -50mA, V CE = -20V, f = 100MHz200MHz t ON Turn On Time V CC = -30V, I C = -150mA, I B1= -15mA 45ns t OFFTurn Off TimeV CC = -6V, I C = -150mA,I B1= I B1 = -15mA100nsKSP2907A : 1. Emitter 2. Base 3. Collector KSP2907AC : 1. Emitter 2. Collector 3. BaseTO-921 2 3KSP2907A PNP General Purpose AmplifierPackage Marking and Ordering InformationNote : Affix “-C-” - center collector pin.Suffix “-BU” - Bulk packing, straight lead form.(see package dimensions)Suffix “-TF” - Tape& Reel packing, 0.200 In-Line Spacing lead form. (see package dimensions) SUffix “-TA” - Tape& AMMO packing, 0.200 In-Line Spacing lead form. (see package dimensions)Device (note)Device MarkingPackagePacking MethodQty(pcs)Pin DefinitionsKSP2907ABU KSP2907A TO-92BULK -- 1.Emitter 2.Base 3.Collector KSP2907ACBU KSP2907AC TO-92BULK -- 1.Emitter 2.Collector 3.Base KSP2907ATA KSP2907A TO-92TAPE & AMMO 2,000 1.Emitter 2.Base 3.Collector KSP2907ACTA KSP2907AC TO-92TAPE & AMMO 2,000 1.Emitter 2.Collector 3.Base KSP2907ATFKSP2907ATO-92TAPE & REEL2,0001.Emitter2.Base3.CollectorKSP2907A PNP General Purpose AmplifierKSP2907A PNP General Purpose AmplifierTRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.KSP2907A PNP General Purpose AmplifierDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPE-CIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet IdentificationProduct StatusDefinitionAdvance InformationFormative or In DesignThis datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT Quiet Series™GlobalOptoisolator™GTO™HiSeC™I 2C™i-Lo ™ImpliedDisconnect™IntelliMAX™ISOPLANAR™LittleFET™MICROCOUPLER™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerEdge™PowerSaver™PowerTrench ®QFET ®QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™µSerDes™ScalarPump™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TCM™TinyBoost™TinyBuck™TinyPWM™TinyPower™TinyLogic ®TINYOPTO™TruTranslation™UHC™UltraFET ®UniFET™VCX™Wire™ACEx™ActiveArray™Bottomless™Build it Now™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FAST ®FASTr™FPS™FRFET™Across the board. Around the world.™The Power Franchise ®Programmable Active Droop™Rev. I20。

LM2907中文资料

LM2907/LM2917Frequency to Voltage ConverterGeneral DescriptionThe LM2907,LM2917series are monolithic frequency to voltage converters with a high gain op amp/comparator de-signed to operate a relay,lamp,or other load when the input frequency reaches or exceeds a selected rate.The tachom-eter uses a charge pump technique and offers frequency doubling for low ripple,full input protection in two versions (LM2907-8,LM2917-8)and its output swings to ground for a zero frequency input.The op amp/comparator is fully compatible with the tachom-eter and has a floating transistor as its output.This feature allows either a ground or supply referred load of up to 50mA.The collector may be taken above V CC up to a maximum V CE of 28V.The two basic configurations offered include an 8-pin device with a ground referenced tachometer input and an internal connection between the tachometer output and the op amp non-inverting input.This version is well suited for single speed or frequency switching or fully buffered frequency to voltage conversion applications.The more versatile configurations provide differential ta-chometer input and uncommitted op amp inputs.With this version the tachometer input may be floated and the op amp becomes suitable for active filter conditioning of the tachom-eter output.Both of these configurations are available with an active shunt regulator connected across the power leads.The regulator clamps the supply such that stable frequency to voltage and frequency to current operations are possible with any supply voltage and a suitable resistor.Advantagesn Output swings to ground for zero frequency input n Easy to use;V OUT =f IN x V CC x R1x C1n Only one RC network provides frequency doubling n Zener regulator on chip allows accurate and stable frequency to voltage or current conversion (LM2917)Featuresn Ground referenced tachometer input interfaces directly with variable reluctance magnetic pickupsn Op amp/comparator has floating transistor output n 50mA sink or source to operate relays,solenoids,meters,or LEDsn Frequency doubling for low ripplen Tachometer has built-in hysteresis with either differential input or ground referenced input n Built-in zener on LM2917n ±0.3%linearity typicaln Ground referenced tachometer is fully protected from damage due to swings above V CC and below groundApplicationsn Over/under speed sensingn Frequency to voltage conversion (tachometer)n Speedometersn Breaker point dwell meters n Hand-held tachometer n Speed governors n Cruise controln Automotive door lock control n Clutch control n Horn controlnTouch or sound switchesBlock and Connection DiagramsDual-In-Line and Small Outline Packages,Top Views00794201Order Number LM2907M-8or LM2907N-8See NS Package Number M08A or N08E 00794202Order Number LM2917M-8or LM2917N-8See NS Package Number M08A or N08EMay 2003LM2907/LM2917Frequency to Voltage Converter©2003National Semiconductor Corporation Block and Connection Diagrams Dual-In-Line and Small Outline Packages,Top Views(Continued)00794203Order Number LM2907M or LM2907N See NS Package Number M14A or N14A 00794204Order Number LM2917M or LM2917N See NS Package Number M14A or N14AL M 2907/L M 2917 2Absolute Maximum Ratings(Note1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.Supply Voltage28V Supply Current(Zener Options)25mA Collector Voltage28V Differential Input VoltageTachometer28V Op Amp/Comparator28V Input Voltage RangeTachometerLM2907-8,LM2917-8±28VLM2907,LM29170.0V to+28V Op Amp/Comparator0.0V to+28V Power DissipationLM2907-8,LM2917-81200mW LM2907-14,LM2917-141580mW See(Note1)Operating Temperature Range−40˚C to+85˚C Storage Temperature Range−65˚C to+150˚C Soldering InformationDual-In-Line PackageSoldering(10seconds)260˚C Small Outline PackageVapor Phase(60seconds)215˚C Infrared(15seconds)220˚C See AN-450“Surface Mounting Methods and Their Effect on Product Reliability”for other methods of soldering surface mount devices.Electrical CharacteristicsV CC=12V DC,T A=25˚C,see test circuitSymbol Parameter Conditions Min Typ Max Units TACHOMETERInput Thresholds V IN=250mVp-p@1kHz(Note2)±10±25±40mVHysteresis V IN=250mVp-p@1kHz(Note2)30mVOffset Voltage V IN=250mVp-p@1kHz(Note2)LM2907/LM2917 3.510mVLM2907-8/LM2917-8515mVInput Bias Current V IN=±50mV DC0.11µAV OH Pin2V IN=+125mV DC(Note3)8.3VV OL Pin2V IN=−125mV DC(Note3) 2.3VI2,I3Output Current V2=V3=6.0V(Note4)140180240µAI3Leakage Current I2=0,V3=00.1µAK Gain Constant(Note3)0.9 1.0 1.1 Linearity f IN=1kHz,5kHz,10kHz(Note5)−1.00.3+1.0%OP/AMP COMPARATORV OS V IN=6.0V310mVI BIAS V IN=6.0V50500nAInput Common-Mode Voltage0V CC−1.5V VVoltage Gain200V/mVOutput Sink Current V C=1.04050mAOutput Source Current V E=V CC−2.010mASaturation Voltage I SINK=5mA0.10.5VI SINK=20mA 1.0VI SINK=50mA 1.0 1.5VZENER REGULATORRegulator Voltage R DROP=470Ω7.56VSeries Resistance10.515ΩTemperature Stability+1mV/˚CTOTAL SUPPLY CURRENT 3.86mANote1:For operation in ambient temperatures above25˚C,the device must be derated based on a150˚C maximum junction temperature and a thermal resistanceof101˚C/W junction to ambient for LM2907-8and LM2917-8,and79˚C/W junction to ambient for LM2907-14and LM2917-14.Note2:Hysteresis is the sum+V TH−(−V TH),offset voltage is their difference.See test circuit.Note3:V OH is equal to3⁄4x V CC−1V BE,V OL is equal to1⁄4x V CC−1V BE therefore V OH−V OL=V CC/2.The difference,V OH−V OL,and the mirror gain,I2/I3,are the two factors that cause the tachometer gain constant to vary from1.0.Note4:Be sure when choosing the time constant R1x C1that R1is such that the maximum anticipated output voltage at pin3can be reached with I3x R1.The maximum value for R1is limited by the output resistance of pin3which is greater than10MΩtypically.LM2907/LM29173Electrical Characteristics(Continued)Note 5:Nonlinearity is defined as the deviation of V OUT (@pin 3)for f IN =5kHz from a straight line defined by the V OUT @1kHz and V OUT @10kHz.C1=1000pF,R1=68k and C2=0.22mFd.Test Circuit and Waveform00794206Tachometer Input Threshold Measurement00794207L M 2907/L M 2917 4Typical Performance CharacteristicsTotal Supply CurrentZener Voltage vsTemperature0079424000794241Normalized Tachometer Output vs TemperatureNormalized TachometerOutput vs Temperature 0079424200794243Tachometer Currents I2 and I3vs Supply VoltageTachometer Currents I2and I3vs Temperature0079424400794245LM2907/LM29175Typical Performance Characteristics(Continued)Tachometer Linearity vs TemperatureTachometer Linearity vs Temperature0079424600794247Tachometer Linearity vs R1Tachometer Input Hysteresisvs Temperature0079424800794249Op Amp Output TransistorCharacteristics Op Amp Output TransistorCharacteristics0079425000794251L M 2907/L M 2917 6Applications InformationThe LM2907series of tachometer circuits is designed forminimum external part count applications and maximum ver-satility.In order to fully exploit its features and advantageslet’s examine its theory of operation.The first stage of op-eration is a differential amplifier driving a positive feedbackflip-flop circuit.The input threshold voltage is the amount ofdifferential input voltage at which the output of this stagechanges state.Two options(LM2907-8,LM2917-8)haveone input internally grounded so that an input signal mustswing above and below ground and exceed the input thresh-olds to produce an output.This is offered specifically formagnetic variable reluctance pickups which typically providea single-ended ac output.This single input is also fullyprotected against voltage swings to±28V,which are easilyattained with these types of pickups.The differential input options(LM2907,LM2917)give theuser the option of setting his own input switching level andstill have the hysteresis around that level for excellent noiserejection in any application.Of course in order to allow theinputs to attain common-mode voltages above ground,inputprotection is removed and neither input should be takenoutside the limits of the supply voltage being used.It is veryimportant that an input not go below ground without someresistance in its lead to limit the current that will then flow inthe epi-substrate diode.Following the input stage is the charge pump where the inputfrequency is converted to a dc voltage.To do this requiresone timing capacitor,one output resistor,and an integratingor filter capacitor.When the input stage changes state(dueto a suitable zero crossing or differential voltage on the input)the timing capacitor is either charged or discharged linearlybetween two voltages whose difference is V CC/2.Then inone half cycle of the input frequency or a time equal to1/2f INthe change in charge on the timing capacitor is equal toV CC/2x C1.The average amount of current pumped into orout of the capacitor then is:The output circuit mirrors this current very accurately into theload resistor R1,connected to ground,such that if the pulsesof current are integrated with a filter capacitor,then V O=i c xR1,and the total conversion equation becomes:V O=V CC x f IN x C1x R1x KWhere K is the gain constant—typically1.0.The size of C2is dependent only on the amount of ripplevoltage allowable and the required response time.CHOOSING R1AND C1There are some limitations on the choice of R1and C1whichshould be considered for optimum performance.The timingcapacitor also provides internal compensation for the chargepump and should be kept larger than500pF for very accu-rate operation.Smaller values can cause an error current onR1,especially at low temperatures.Several considerationsmust be met when choosing R1.The output current at pin3is internally fixed and therefore V O/R1must be less than orequal to this value.If R1is too large,it can become asignificant fraction of the output impedance at pin3whichdegrades linearity.Also output ripple voltage must be con-sidered and the size of C2is affected by R1.An expressionthat describes the ripple content on pin3for a single R1C2combination is:It appears R1can be chosen independent of ripple,howeverresponse time,or the time it takes V OUT to stabilize at a newvoltage increases as the size of C2increases,so a compro-mise between ripple,response time,and linearity must bechosen carefully.As a final consideration,the maximum attainable input fre-quency is determined by V CC,C1and I2:USING ZENER REGULATED OPTIONS(LM2917)For those applications where an output voltage or currentmust be obtained independent of supply voltage variations,the LM2917is offered.The most important consideration inchoosing a dropping resistor from the unregulated supply tothe device is that the tachometer and op amp circuitry alonerequire about3mA at the voltage level provided by thezener.At low supply voltages there must be some currentflowing in the resistor above the3mA circuit current tooperate the regulator.As an example,if the raw supplyvaries from9V to16V,a resistance of470Ωwill minimize thezener voltage variation to160mV.If the resistance goesunder400Ωor over600Ωthe zener variation quickly risesabove200mV for the same input variation.LM2907/LM29177Typical ApplicationsMinimum Component Tachometer0079420800794209L M 2907/L M 2917 8Typical Applications(Continued)Zener Regulated Frequency to Voltage Converter00794210Breaker Point Dwell Meter00794211LM2907/LM29179Typical Applications(Continued)Voltage Driven Meter Indicating Engine RPM V O =6V @400Hz or 6000ERPM (8Cylinder Engine)00794212Current Driven Meter Indicating Engine RPMI O =10mA @300Hz or 6000ERPM (6Cylinder Engine)00794213L M 2907/L M 2917 10Typical Applications(Continued)Capacitance MeterV OUT=1V–10V for C X=0.01to0.1mFd(R=111k)00794214Two-Wire Remote Speed Switch00794215LM2907/LM2917Typical Applications(Continued)100Cycle Delay Switch00794216Variable Reluctance Magnetic Pickup Buffer Circuits00794239Precision two-shot output frequency equals twice input frequency.Pulse height =V ZENER00794217L M 2907/L M 2917Typical Applications(Continued)Finger Touch or Contact Switch0079421800794219Flashing LED Indicates Overspeed00794220Flashing begins when f IN ≥100Hz.Flash rate increases with input frequency increase beyond trip point.LM2907/LM2917Typical Applications(Continued)Frequency to Voltage Converter with2Pole Butterworth Filter to Reduce Ripple00794221 Overspeed Latch0079422200794223 LM297/LM2917Typical Applications(Continued)Some Frequency Switch Applications May Require Hysteresis in theComparator Function Which can be Implemented in Several Ways:0079422400794225007942260079422700794228LM2907/LM2917Typical Applications(Continued)Changing the Output Voltage for an Input Frequency of Zero0079422900794230Changing Tachometer Gain Curve or Clamping the Minimum Output Voltage0079423100794232L M 2907/L M 2917Anti-Skid Circuit Functions“Select-Low”Circuit0079423300794234V OUT is proportional to the lower of the two input wheel speeds.“Select-High”Circuit0079423500794236V OUT is proportional to the higher of the two input wheel speeds.“Select-Average”Circuit00794237LM2907/LM2917Equivalent Schematic Diagram00794238*This connection made on LM2907-8and LM2917-8only.**This connection made on LM2917and LM2917-8only.L M 2907/L M 2917Physical Dimensions inches(millimeters)unless otherwise noted8-Lead(0.150"Wide)Molded Small Outline Package,JEDECOrder Number LM2907M-8or LM2917M-8NS Package Number M08AMolded SO Package(M)Order Number LM2907M or LM2917MNS Package Number M14A LM2907/LM2917Physical Dimensionsinches (millimeters)unless otherwise noted (Continued)Molded Dual-In-Line Package (N)Order Number LM2907N-8or LM2917N-8NS Package Number N08EMolded Dual-In-Line Package (N)Order Number LM2907N or LM2917NNS Package Number N14AL M 2907/L M 2917NotesLIFE SUPPORT POLICYNATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION.As used herein:1.Life support devices or systems are devices or systems which,(a)are intended for surgical implant into the body,or (b)support or sustain life,and whose failure to perform when properly used in accordance with instructions for use provided in the labeling,can be reasonably expected to result in a significant injury to the user.2.A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system,or to affect its safety or effectiveness.National Semiconductor Americas Customer Support CenterEmail:new.feedback@ Tel:1-800-272-9959National SemiconductorEurope Customer Support CenterFax:+49(0)180-5308586Email:europe.support@Deutsch Tel:+49(0)6995086208English Tel:+44(0)8702402171Français Tel:+33(0)141918790National Semiconductor Asia Pacific Customer Support CenterEmail:ap.support@National SemiconductorJapan Customer Support Center Fax:81-3-5639-7507Email:jpn.feedback@ Tel:81-3-5639-7560LM2907/LM2917Frequency to Voltage ConverterNational does not assume any responsibility for use of any circuitry described,no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.元器件交易网。

2N2907A;中文规格书,Datasheet资料

20736Marilla Street Chatsworth! "#Symbol Parameter Min Max UnitsON CHARACTERISTICS*V CE(sat) Collector-Emitter Saturation Voltage*(I C =150mAdc, I B =15mAdc) (I C =500mAdc, I B =50mAdc)--- --- 400 1.6 mVdc Vdc V BE(sat) Base-Emitter Saturation Voltage *(I C =150mAdc, I B =15mAdc) (I C =500mAdc, I B =50mAdc)--- ---1.32.6Vdc VdcSMALL-SIGNAL CHARACTERISTICSC OB Output Capacitance(V CB =10Vdc,I E =ie=0, f=1.0MHz) --- 8.0 pFf T Transistor Frequency*(I C =50mAdc, V CE =20Vdc, f=100MHz) 200 --- MHzSWITCHING CHARACTERISTICST d Delay Time ---15 ns t r Rise Time --- 35 ns t s Storage Time --- 250 ns t f Fall TimeI CON =150mAdc,I BON =15mAdc, I B(off)=15mAdc ---50 ns* Pulse Test: tp ≦300us, Duty Cycle ≦2.0%2N2907,2N2907ATMMicro Commercial ComponentsMicro Commercial ComponentsOrdering Information :Device PackingPart Number-B P Bulk;100pcs/Box***IMPORTANT NOTICE***Micro Commercial Components Corp. reserve s the right to make changes without further notice to any product herein to make corrections, modifications , enhancements , improvements , or other changes . Micro Commercial Components Corp . does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all risks of such use and will agree to hold Micro Commercial Components Corp . and all the companies whose products are represented on our website, harmless against all damages.***LIFE SUPPORT***MCC's products are not authorized for use as critical components in life support devices or systems without the express writtenapproval of Micro Commercial Components Corporation.***CUSTOMER AWARENESS***Counterfeiting of semiconductor parts is a growing problem in the industry. Micro Commercial Components (MCC) is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. MCC strongly encourages customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine parts, have full traceability, meet MCC's quality standards for handling and storage. MCC will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. MCC is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.分销商库存信息: MICRO-COMMERICAL-CO 2N2907A。