2SA1235A中文资料

MAXIMUM RATINGS（Ｔａ＝２５℃）
Symbol ＶＣＢＯ ＶＥＢＯ ＶＣＥＯ Ｉ Ｃ ＰＣ Ｔｊ Ｔｓｔｇ Parameter Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation Junction temperature Storage temperature Ratings
Test conditions
I C=-100μA，RBE=∞
2SA1235A,2SA1602A
Min
-50
E E
Limits Typ
Max
-0.1 -0.1 -0.1 500
Unit
V μA μA － － － V MHz pF dB
VCB=-50V，I VCB=-60V，I
=0 =0 150
ｈＦＥ* ｈＦＥ ＶＣＥ（ｓａｔ） ｆＴ Cob NF
EＢＯ
Symbol
C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain C to E Saturation Vlotage Gain bandwidth product Collector output capacitance C to E break down voltage 2SA1993
2SA1993
COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE
COLLECTOR DISSIPATION Pc (mW)
200
COLLECTOR DISSIPATION Pc (mW)
0 25 50 75 100 AMBIENT TEMPERTURE Ta (℃) 125 150
GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT
RELATIVE VALUE OF DC FORWARD CURRENT GAIN hFE
150
100
100
10
50
1 -0.1 -1 -10 -100 COLLECTOR CURRENT IC(mA)
COLLECTOR OUTPUT CAPACITANCE VS. COLLECTOR TO BASE VOLTAGE 100 COLLECTOR OUTPUT CAPACITANCE Cob(pF) Ta=25℃ IE=0 f=1MHz
ISAHAYA ELECTRONICS CORPORATION
0.16
0.4
元器件交易网
< SMALL-SIGNAL TRANSISTOR >
2SA1235A
2SA1602A 2SA1993
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)
*： It shows hFE classification in below table.
ｈFE 2SA1235A 2SA1602A 2SA1993
150～300
250～500
ISAHAYA ELECTRONICS CORPORATION
元器件交易网
< SMALL-SIGNAL TRANSISTOR >
400
150
300
100
200
50
100
0
0 0 25 50 75 100 AMBIENT TEMPERTURE Ta (℃) 125 150
ISAHAYA ELECTRONICS CORPORATION
元器件交易网
< SMALL-SIGNAL TRANSISTOR >
0.95
APPLICATION
For Hybrid IC,small type machine low frequency voltageAmplify application 2.0 1.3
0.3
① ② ③
① ② ③
2.9 1.90
0.65
0.9
1.1
0.95
0.15
0.7
0.8
JEITA：SC-70 JEDEC：－ TERMINAL CONNECTER ①：BASE ②：EMITTER ③：COLLECTOR
元器件交易网
< SMALL-SIGNAL TRANSISTOR >
2SA1235A
2SA1602A 2SA1993
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) FEATURE ・ Super mini package for easy mounting OUTLINE DRAWING
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. Notes regarding these materials ·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging ISAHAYA or third party. ·ISAHAYA Electronics Corporation assumes no responsibility for any damage, or infringement of any third party's rights , originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials. ·All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed herein. ·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to t he export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein.
2SA1235A -60 -6 -50 200 200 200 +150 -55～+150 450 2SA1602A -60 2SA1993 -50
Unit
V V V mA mW ℃ ℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parame ter
Ｖ（ＢＲ）ＣＥＯ Ｉ ＣＢＯ Ｉ
0～0.1
JEITA：SC-59 JEDEC：TO-236 類似 TERMINAL CONNECTER ①：BASE ②：EMITTER ③：COLLECTOR 2SA1993
4.0
3.0
0～0.1
14.01ຫໍສະໝຸດ 01.00.1 0.45
1.27 1.27 0.4 2.5 ① ② ③
JEITA：－ JEDEC：－ TERMINAL CONNECTER ①：EMITTER ②：COLLECTOR ③：BASE
VEB=-6V，I VCE=-6V，I
2SA1993
C
=0 C =-1mA VCE=-6V，I
C
2SA1235A,2SA1602A
=-0.1mA
50 90 -0.3 200 4.0 20
Noise figure
E F
I C =-100mA，I B =-10mA VCE=-6V，I E =10mA VCB=-6V，I E =0,f=1MHz VCE=-6V，I E =0.3mA,f=100Hz,RG=10ｋΩ
2SA1602A
2.1 0.425 1.25 0.425 0.5
Unit：ｍｍ
2SA1235A
2.5 1.5 0.5
・Excellent linearity of DC forward gain
・Small collector to emitter saturation voltage VCE(sat)=-0.3V max 0.65
-50
COMMON EMITTER TRANSFER
Ta=25℃ 0.14mA 0.12mA
COLLECTOR CURRENT IC(mA) -40
Ta=25℃ VCE=-6V
-30
0.10mA 0.08mA
-30
-20
0.06mA 0.04mA
-20
-10
0.02mA IB=0
-10
-0 -0 -1 -2 -3 -4 -5 COLLECTOR EMITTER VOLTAGE VCE(V)
0
-1000
0.1
1 10 EMITTER CURRENT IE(mA)
100
10
1
0.1 -0.1 -1 -10 COLLECTOR TO BASE VOLTAGE VCB(V) -100
ISAHAYA ELECTRONICS CORPORATION
元器件交易网
Marketing division, Marketing planning department
-0 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 BASE TO EMITTER VOLTAGE VBE(V)
DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 10000 Ta=25℃ VCE=-6V 100(@IC=-1mA) 1000
250 Ta=25℃ VCE=-6V GAIN BAND WIDTH PRODUCT fT(MHz) 200
2SA1235A
2SA1602A 2SA1993
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)
COMMON EMITTER OUTPUT -50 0.18mA 0.16mA COLLECTOR CURRENT IC(mA) -40
2SA1235A
2SA1602A 2SA1993
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type)
2SA1235A、2SA1602