BC857T贴片三极管 SOT-523三极管封装BC857T参数
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-523 Plastic-Encapsulate Transistors
ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)
Parameter
Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V (BR)CBO I C = -10µA, I E 0 -50 V
Collector-emitter breakdown voltage V (BR)CEO I C = -10mA, I B 0 -45 V
Emitter-base breakdown voltage V (BR)EBO I E = -1µA, I C 0 -6 V
Collector Cutoff Current I CBO
V CB -30V -15 nA
DC current gain BC857AT
BC857BT BC857CT
h FE
V CE =-5V, I C =-2mA
125 220 420 250
475800
Collector-emitter saturation voltage V CE (sat)I C =-10mA, I B =-0.5 mA I C =-100mA, I B =-5 mA -0.3
-0.65
V Base-emitter saturation voltage V BE (sat)I C =-10mA, I B =-0.5 mA I C =-100mA, I B = -5 mA -0.7-0.9 V Base-emitter voltage V BE(on) V CE =
-5V, I C = -2mA V CE = -5V, I C = -10mA -600 660
-750-820
mV
Transition frequency f T V CE = -5 V, I C = -10mA f=100MHz
100
MHz
Collector output capacitance
C ob V CB =-10V,f =
1MHz 4.5 pF
Noise figure
NF
V CE =-5V,I C =-0.2mA, f=1KHZ,
R S =2K Ω,BW=200HZ
10 dB
A,May,2011
【南京南山半导体有限公司 — 长电贴片三极管选型资料】
The bottom gasket
The top gasket
3000×1 PCS
3000×15 PCS
Label on the Reel
Label on the Inner Box
Label on the Outer Box
QA Label
Seal the box with the tape
Seal the box with the tape
Stamp “EMPTY” on the empty box
Inner Box: 210 mm × 208 mm × 203 mm
Outer Box: 440 mm × 440 mm × 230 mm