呼吸机专用mos管 AP20N03D 20A 30V TO-252
呼吸机专用mos管APG60N10D 60A 100V TO-252
General DescriptionAPG60N10D use advanced SGT MOSFET technology toprovide low RDS(ON), low gate charge, fast switchingand excellent avalanche characteristics.This device is specially designed to get better ruggednessand suitable to use inFeaturesLow RDS(on) & FOMExtremely low switching lossExcellent stability and uniformity or InvertorsApplicationsConsumer electronic power supplyMotor controlSynchronous-rectificationIsolated DCSynchronous-rectification applicationsProduct ID Pack Marking Qty(PCS)APG60N10D TO-252-3APG60N10D XXX YYYY2500at T j=25℃ unless otherwise notedParameter Symbol Value UnitDrain source voltage V DS100 VGate source voltage V GS±20 V Continuous drain current1), T C=25 ℃I D60 APulsed drain current2), T C=25 ℃I D, pulse180 APower dissipation3), T C=25 ℃P D125 WSingle pulsed avalanche energy5)E AS100 mJ Operation and storage temperature T stg,T j-55 to 150 ℃ Thermal resistance, junction-case RθJC 1 ℃/WThermal resistance, junction-ambient4)RθJA62 ℃/W1Electrical Characteristics at T j=25 ℃ unless otherwise specified1)Calculated continuous current based on maximum allowable junction temperature.2)Repetitive rating; pulse width limited by max. junction temperature.3)Pd is based on max. junction temperature, using junction-case thermal resistance.4)The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a stillair environment with T a=25 ℃.5)V DD=50 V, R G=25 Ω, L=0.3 mH, starting T j=25 ℃.23Electrical Characteristics DiagramsV , Drain-source voltage (V) DSFigure 1, Typ. output characteristicsFigure 2, Typ. transfer characteristicsDS45 Test circuits and waveformsFigure 4, Diode reverse recovery test circuit & waveformsFigure 1 , G ate c h arge t e st c i rcuit & w a veformFigure , 2 S w itching t ime t e st c i rcuit & w a veformsFigure , 3 Unclamped i n ductive s w itching (UIS) t e st c i rcuit & w a veforms6Package Mechanical DataDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.A A2B C DE G H LV1V22.1000.660.40 2.500.100.860.600.08300.0260.0160.0980.0040.0340.0246.409.5010.700.3740.4210.0530.0655.906.30L20°6°0.2320.2486.800.2520.2684.47 4.670.1760.1841.09 1.210.0430.0487°1.351.650°6°7°B2 5.18 5.480.2020.216C20.440.580.0170.023D1E15.30REF4.630.1820.209REFDETAIL ATO-252Reel Spectification-TO-252ABBDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.W E F D0D1P0P1P2A0B0K0T t115.901.657.401.4016.101.857.601.600.6260.0650.2910.0550.6340.0730.2990.0631.40 1.607.9010.4510.600.4110.4170.240.270.0090.0110.0550.0633.90 4.106.900.27110P00.1540.1618.100.3110.3191.90 2.100.0750.0830.100.00440.001.5752.780.10916.001.757.501.501.504.008.002.0010.500.6300.0690.2950.0590.0590.1570.3150.0790.4136.857.002.68 2.880.2700.2760.1050.11339.8040.201.5671.583APG60N10D100V N-SGT Enhancement Mode MOSFETAttention1,Any and all APM Microelectronics products described or contained herein do not have specificationsthat can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result inserious physical and/or material damage. Consult with your APM Microelectronics representative nearestyou before using any APM Microelectronics products described or contained herein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from using productsat values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronicsproducts described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the describ ed products in the independent state, and arenot guarantees of the performance, characteristics, and functions of the described products as mountedin the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that theseprobabilistic failures could give rise to accidents or events that could endanger human lives that couldgive rise to smoke or fire, or that could cause damage to other property. When designing equipment,adopt safety measures so that these kinds of accidents or events cannot occur. Such measures includebut are not limited to protective circuits and error prevention circuits for safe design, redundantdesign,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) describedor contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectualproperty rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" forthe APM Microelectronics product that you Intend to use.7。
呼吸机专用mos管APG12N10D 12A 100V TO-252.
1General DescriptionAPG12N10D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.This device is specially designed to get better ruggednessand suitable to use inFeaturesLow RDS(on) & FOMExtremely low switching lossExcellent stability and uniformity or InvertorsApplicationsConsumer electronic power supply Motor controlSynchronous-rectification Isolated DCSynchronous-rectification applicationsat T j =25℃ unless otherwise notedElectrical Characteristics at T j=25 ℃ unless otherwise specified23Electrical Characteristics DiagramsV DS , Drain-source voltage (V)Figure 3, Typ. capacitancesFigure 4, Typ. gate chargeFigure 5, Drain-source breakdown voltageFigure 6, Drain-source on-state resistanceRD S (O N ) , O n -r e s i s t a n c e ( m Ω )Figure 1, Typ. output characteristics I D , D r a i n c u r r e n t (A )V DS , Drain-source voltage (V)I D , D r a i n c u r r e n t (A )4Figure 9, Drain currentFigure 10, Safe operation area T C =25 ℃Figure 7, Forward characteristic of body diode Figure 8, Drain-source on-state resistanceI S , S o u r c e c u r r e n t (A )V SD , Source-Drain voltage (V)I D , Drain current(A)R D S (O N ), O n -r e s i s t a n c e (Ω)I ASV GSBV DSSV DDEAS=12L x I AS 2 x BV DSS BV DSS -V DDFig.11 Switching Time WaveformFig.12 Unclamped Inductive Switching Waveform5Package Mechanical Data-TO-252-3LDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.A A2B C DE G H LV1V22.1000.660.40 2.500.100.860.600.08300.0260.0160.0980.0040.0340.0246.409.5010.700.3740.4210.0530.0655.906.30L20°6°0.2320.2486.800.2520.2684.47 4.670.1760.1841.09 1.210.0430.0487°1.351.650°6°7°B2 5.18 5.480.2020.216C20.440.580.0170.023D1E15.30REF4.630.1820.209REFDETAIL ATO-252Reel Spectification-TO-252ABBDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.W E F D0D1P0P1P2A0B0K0T t115.901.657.401.4016.101.857.601.600.6260.0650.2910.0550.6340.0730.2990.0631.40 1.607.9010.4510.600.4110.4170.240.270.0090.0110.0550.0633.90 4.106.900.27110P00.1540.1618.100.3110.3191.90 2.100.0750.0830.100.00440.001.5752.780.10916.001.757.501.501.504.008.002.0010.500.6300.0690.2950.0590.0590.1570.3150.0790.4136.857.002.68 2.880.2700.2760.1050.11339.8040.201.5671.583Attention1,Any and all APM Microelectronics products described or contained herein do not have specificationsthat can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result inserious physical and/or material damage. Consult with your APM Microelectronics representative nearestyou before using any APM Microelectronics products described or contained herein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from using productsat values that exceed, even momentarily, rated values (such as maximum ratings, operating conditionranges, or other parameters) listed in products specifications of any and all APM Microelectronicsproducts described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the describ ed products in the independent state, and arenot guarantees of the performance, characteristics, and functions of the described products as mountedin the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that theseprobabilistic failures could give rise to accidents or events that could endanger human lives that couldgive rise to smoke or fire, or that could cause damage to other property. When designing equipment,adopt safety measures so that these kinds of accidents or events cannot occur. Such measures includebut are not limited to protective circuits and error prevention circuits for safe design, redundantdesign,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) describedor contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate andreliable, but no guarantees are made or implied regarding its use or any infringements of intellectualproperty rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" forthe APM Microelectronics product that you Intend to use.6Copyright Attribution“APM-Microelectronice”7。
呼吸机专用mos管 AP5N50D 5A 500V TO-252
Gate-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Power Dissipation (TC = 25ºC)
Operating Junction and Storage Temperature Range
ID, Drain Current (A)
3
AP5N50D Rve1.0
臺灣永源微電子科技有限公司
AP5N50D
500V N-Channel Enhancement Mode MOSFE
103
10
Ciss
8
VDD = 400V
VDD = 250V
102
C oss
6
VDD = 100V
101
Crss
V(BR)DSS IDSS IGSS VGS(th)
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Gate-Source Threshold Voltage
VGS = 0V, ID = 250µA
-- 13.5 --
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 400V, ID = 5A, VGS = 10V
--
2
--
nC
--
6
--
td(on)
Turn-on Delay Time
tr
Turn-on Rise Time
MOS管规格书 20N03D_20A_30V_TO-252
1The AP20N03D uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aBattery protection or in other Switching application.V DS = 30V I D =20AR DS(ON) < 25m Ω@ V GS =10VBattery protection Load switchUninterruptible power supplyPackage Marking and Ordering InformationDescription General Features Application3942 =10A=15V , V 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2The data tested by pulsed , pulse width .The EAS data shows Max. rating .3he test condition is V ≦ 300us , duty cycle DD =25≦V,V 2%GS =10V,L=0.1mH,I AS =12.7A 4.The power dissipation is limited by 150℃ junction temperature5.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.Electrical Characteristics (T C =25℃ unless otherwise specified) 139903Typical Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge CharacteristicsFig.5 Normalized V vs. T 034VI ASV GS BV DSSV DDEAS=12L x I AS 2 x BV DSSBV DSS -V DDFig.8 Safe Operating AreaFig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform5Package Mechanical DataDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.A A2B C DE G H LV1V22.1000.660.40 2.500.100.860.600.08300.0260.0160.0980.0040.0340.0246.409.5010.700.3740.4210.0530.0655.906.30L20°6°0.2320.2486.800.2520.2684.47 4.670.1760.1841.09 1.210.0430.0487°1.351.650°6°7°B2 5.18 5.480.2020.216C20.440.580.0170.023D1E15.30REF4.630.1820.209REFDETAIL ATO-252Reel Spectification-TO-252A BBDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.W E F D0D1P0P1P2A0B0K0T t115.901.657.401.4016.101.857.601.600.6260.0650.2910.0550.6340.0730.2990.0631.40 1.607.9010.4510.600.4110.4170.240.270.0090.0110.0550.0633.90 4.106.900.27110P00.1540.1618.100.3110.3191.90 2.100.0750.0830.100.00440.001.5752.780.10916.001.757.501.501.504.008.002.0010.500.6300.0690.2950.0590.0590.1570.3150.0790.4136.857.002.68 2.880.2700.2760.1050.11339.8040.201.5671.5831339903946Attention1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating conditionranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the describ ed products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ’sproducts or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment,adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic ormechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.13352990394。
呼吸机专用mos管 AP30P03D -30A -30V TO-252
AP30P03D RVE3.0 臺灣永源微電子科技有限公司1DescriptionThe AP30P03D uses advanced trench technologyto provide excellent R DS(ON), low gate charge andoperation with gate voltages as low as 4.5V. Thisdevice is suitable for use as aBattery protection or in other Switching application.General FeaturesV DS = -30V I D =-30 AR DS(ON) < 20mΩ @ V GS=10VApplicationBattery protectionLoad switchUninterruptible power supplyPackage Marking and Ordering InformationProduct ID Pack Marking Qty(PCS) AP30P03D TO-252-3AP30P03D XXXX YYYY2500 Absolute Maximum Ratings (T C=25℃unless otherwise noted)Symbol ParameterRatingUnits 10s Steady StateV DS Drain-Source Voltage-30 V V GS Gate-Sou r ce Voltage ±20VI D@T C=25℃Continuous Drain Current, V GS @ -10V1-30 A I D@T C=100℃Continuous Drain Current, V GS @ -10V1-22 A I D@T A=25℃Continuous Drain Current, V GS @ -10V1-13.4 -8.5 A I D@T A=70℃Continuous Drain Current, V GS @ -10V1-10.7 -6.8 AI DM Pulsed Drain Current2-70 AEAS Single Pulse Avalanche Energy372.2 mJI AS Avalanche Current -38 A P D@T C=25℃Total Power Dissipation434.7 W P D@T A=25℃Total Power Dissipation4 5 2 W T STG Storage Temperature Range -55 to 150 ℃ T J Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 162 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) 25 ℃/W RθJC Thermal Resistance Junction-Case1 3.6 ℃/WAP30P03D RVE3.0 臺灣永源微電子科技有限公司2J Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V , I D =-250uA -30 --- --- V △BV DSS /△T J BV DSS Temperature Coefficient Reference to 25℃ , I D =-1mA--- -0.022 --- V/℃R DS(ON) Static Drain-Source On-Resistance 2 V GS =-10V , I D =-15A--- 18 20 m Ω V GS =-4.5V , I D =-10A --- 25 32 V GS(th) Gate Threshold VoltageV GS =V DS , I D =-250uA-1.0 --- -2.5 V △V GS(th) V GS(th) Temperature Coefficient --- 4.6 --- mV/℃ I DSS Drain-Source Leakage Current V DS =-24V , V GS =0V , T J =25℃--- --- -1 uA V DS =-24V , V GS =0V , T J =55℃ --- --- -5 I GSS Gate-Source Leakage Current V GS =±20V , V DS =0V --- --- ±100 nA gfs Forward Transconductance V DS =-5V , I D =-10A --- 5 --- S R g Gate Resistance V DS =0V , V GS =0V , f=1MHz--- 13 --- Ω Q g Total Gate Charge (-4.5V) V DS =-15V , V GS =-4.5V , I D =-15A ---12.5 --- nC Q gs Gate-Source Charge ---5.4 --- Q gd Gate-Drain Charge --- 5 --- T d(on) Turn-On Delay Time V DD =-15V , V GS =-10V,R G =3.3, I D =-15A--- 4.4 --- ns T r Rise Time --- 11.2 --- T d(off) Turn-Off Delay Time --- 34 --- T f Fall Time --- 18 --- C iss Input Capacitance V DS =-15V , V GS =0V , f=1MHz --- 1345 --- pF C oss Output Capacitance --- 194 --- C rss Reverse Transfer Capacitance --- 158 --- I S Continuous Source Current 1,5 V G =V D =0V , Force Current --- --- -35 A I SM Pulsed Source Current 2,5 --- --- -70 A V SD Diode Forward Voltage 2 V GS =0V , I S =-1A , T J =25℃ --- --- -1.2 V t rr Reverse Recovery Time I F =-15A , dI/dt=100A/µs , T J =25℃--- 12.4 --- nS Q rrReverse Recovery Charge---5---nC-30V P-Channel Enhancement Mode MOSFET3150 Fig.1 Typical Output CharacteristicsFig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) v.s T J4Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching WaveformAP30P03D RVE3.0 臺灣永源微電子科技有限公司5Package Mechanical DataDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.A A2B C DE G H LV1V22.1000.660.40 2.500.100.860.600.08300.0260.0160.0980.0040.0340.0246.409.5010.700.3740.4210.0530.0655.906.30L20°6°0.2320.2486.800.2520.2684.47 4.670.1760.1841.09 1.210.0430.0487°1.351.650°6°7°B2 5.18 5.480.2020.216C20.440.580.0170.023D1E15.30REF4.630.1820.209REFB2E HBGLC2DETAIL ADETAIL AACV 1V 1V 2A 2DV 1E1D 1L2TO-252Reel Spectification-TO-252WEFD 0P0P2P1D 1Tt1B 0K0A05°AAA BBB BDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.W E F D0D1P0P1P2A0B0K0T t115.901.657.401.4016.101.857.601.600.6260.0650.2910.0550.6340.0730.2990.0631.40 1.607.9010.4510.600.4110.4170.240.270.0090.0110.0550.0633.90 4.106.900.27110P00.1540.1618.100.3110.3191.90 2.100.0750.0830.100.00440.001.5752.780.109Φ329Φ132016.001.757.501.501.504.008.002.0010.500.6300.0690.2950.0590.0590.1570.3150.0790.4136.857.002.68 2.880.2700.2760.1050.11339.8040.201.5671.583Attention1,Any and all APM Microelectronics products described or contained herein do not have specificationsthat can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result inserious physical and/or material damage. Consult with your APM Microelectronics representative nearestyou before using any APM Microelectronics products described or contained herein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from using productsat values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronicsproducts described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the describ ed products in the independent state, and arenot guarantees of the performance, characteristics, and functions of the described products as mountedin the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that theseprobabilistic failures could give rise to accidents or events that could endanger human lives that couldgive rise to smoke or fire, or that could cause damage to other property. When designing equipment,adopt safety measures so that these kinds of accidents or events cannot occur. Such measures includebut are not limited to protective circuits and error prevention circuits for safe design, redundantdesign,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) describedor contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate andreliable, but no guarantees are made or implied regarding its use or any infringements of intellectualproperty rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" forthe APM Microelectronics product that you Intend to use.6AP30P03D RVE3.0 臺灣永源微電子科技有限公司。
呼吸机专用mos管APG20N10D 20A 100V TO-252
1General DescriptionAPG20N10D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.This device is specially designed to get better ruggednessand suitable to use inFeaturesLow RDS(on) & FOMExtremely low switching lossExcellent stability and uniformity or InvertorsApplicationsConsumer electronic power supply Motor controlSynchronous-rectification Isolated DCSynchronous-rectification applicationsat T j =25℃ unless otherwise notedElectrical Characteristics at T j=25 ℃ unless otherwise specifiedNote1)Calculated continuous current based on maximum allowable junction temperature.2)Repetitive rating; pulse width limited by max. junction temperature.3)Pd is based on max. junction temperature, using junction-case thermal resistance.4)V DD=50 V, R G=50 Ω, L=0.3 mH, starting T j=25 °C.5)The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a stillair environment with T a=25 °C.2Electrical Characteristics DiagramsV DS, Drain-source voltage (V)Figure 5, Drain-source breakdown voltage Figure 6, Drain-source on-state resistance34 APG20N10D R ev1.0APG20N10D R ev 1.0 臺灣永源微電子科技有限公司5Figure 4, Diode reverse recovery test circuit & waveformsFigure 1 , G ate c h arge t e st c i rcuit & w a veformFigure , 2 S w itching t ime t e st c i rcuit & w a veformsFigure , 3 Unclamped i n ductive s w itching (UIS) t e st c i rcuit & w a veformsAPG20N10D R ev 1.0 6Package Mechanical DataDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.A A2B C DE G H LV1V22.1000.660.40 2.500.100.860.600.08300.0260.0160.0980.0040.0340.0246.409.5010.700.3740.4210.0530.0655.906.30L20°6°0.2320.2486.800.2520.2684.47 4.670.1760.1841.09 1.210.0430.0487°1.351.650°6°7°B2 5.18 5.480.2020.216C20.440.580.0170.023D1E15.30REF4.630.1820.209REFDETAIL ATO-252Reel Spectification-TO-252ABBDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.W E F D0D1P0P1P2A0B0K0T t115.901.657.401.4016.101.857.601.600.6260.0650.2910.0550.6340.0730.2990.0631.40 1.607.9010.4510.600.4110.4170.240.270.0090.0110.0550.0633.90 4.106.900.27110P00.1540.1618.100.3110.3191.90 2.100.0750.0830.100.00440.001.5752.780.10916.001.757.501.501.504.008.002.0010.500.6300.0690.2950.0590.0590.1570.3150.0790.4136.857.002.68 2.880.2700.2760.1050.11339.8040.201.5671.583Attention1,Any and all APM Microelectronics products described or contained herein do not havespecifications that can handle applications that require extremely high levels of reliability, such aslife support systems, aircraft's control systems, or other applications whose failure can bereasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics productsdescribed or contained herein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from usingproducts at values that exceed, even momentarily, rated values (such as maximum ratings,operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained hereinstipulate the performance, characteristics, and functions of the described products in theindependent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms andstates that cannot be evaluated in an independent device, the customer should always evaluate andtest devices mounted in the customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible thatthese probabilistic failures could give rise to accidents or events that could endanger human livesthat could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safedesign, redundant design,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from theauthorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by anymeans,electronic or mechanical, including photocopying and recording, or any information st orageor retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurateand reliable, but no guarantees are made or implied regarding its use or any infringements ofintellectual property rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.7 APG20N10D R ev1.0。
呼吸机专用mos管 AP5N30D 5A 300V TO-252
D = 0.1
10-2
D = 0.05
D = 0.02
D = 0.01
Single Pulse
10-3
10-7 10-6 10-5 10-4 10-3 10-2 10-1 100
Tp, Pulse Width (s)
ZthJC, Thermal Impedance (K/W)
4
AP5N30D Rev1.0
2. IAS = 3.2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25 ºC 3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
263 --
ns
1.9 --
μC
2
AP5N30D Rev1.0
臺灣永源微電子科技有限公司
臺灣永源微電子科技有限公司
AP5N30D
300V N-Channel Enhancement Mode MOSFET
Figure A:Gate Charge Test Circuit and Waveform
Figure B:Resistive Switching Test Circuit and Waveform
--
--
1.4 V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
--
VGS = 0V,IS = 5A, diF/dt =100A
/μs
--
Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature
呼吸机专用mos管 AP30P04D - 30A -40V TO-252
-40V P-Channel Enhancement Mode MOSFET
Description
The AP30P04D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
7
14
Qg
Total Gate Charge (-4.5V)
--- 27.9 ---
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=-20V , VGS=-4.5V , ID=-12A ---
ns
ID=-1A
---
9.6
---
Ciss
Input Capacitance
--- 3500 ---
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=-15V , VGS=0V , f=1MHz
---
323
---
pF
--- 222 ---
-55 to 150 -55 to 150
62 2.4
Units V V A A A A A mJ A W W ℃ ℃
℃/W ℃/W
1
AP30P04D Rve3.8
臺灣永源微電子科技有限公司
AP30P04D
-40V P-Channel Enhancement Mode MOSFET
AP80N03D 80A 30V TO-252
1DescriptionThe AP80N03D uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aBattery protection or in other Switching application.General FeaturesV DS = 30V I D =80 A R DS(ON) < 6m Ω @ V GS =10VApplicationBattery protection Load switchUninterruptible power supplyAbsolute Maximum Ratings (T C =25℃unless otherwise noted)Electrical Characteristics (T J=25℃, unless otherwise noted)23F i g.1 C ontinuous Drain Current vs. TcFig. 3 NormalizedVthvs. TjJTC, Case Temperature (℃)Fig.2Normalized RDSON vs. TjTJ, Junction Temperature (℃)Qg , Gate Charge (nC)Fig .4Gate Charge WaveformSquare Wave Pulse Duration (s) V DS, Drain to Source V oltage (V ) Fig.6 Maximum Safe Operation AreaFig.5 Normalized Transient Impedance T J , Junction Temperature ( ℃)4T d(on)T ron T d(off)T foff V DSV GS10 %IASV GSBV DSSV DDEAS= 12 L x I AS 2 x BVDSS BV DSS V - DDF i g. 8 E AS Wavefo rmF i g . 7 S witching Time Waveform5Package Mechanical DataDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.A A2B C DE G H LV1V22.1000.660.40 2.500.100.860.600.08300.0260.0160.0980.0040.0340.0246.409.5010.700.3740.4210.0530.0655.906.30L20°6°0.2320.2486.800.2520.2684.47 4.670.1760.1841.09 1.210.0430.0487°1.351.650°6°7°B2 5.18 5.480.2020.216C20.440.580.0170.023D1E15.30REF4.630.1820.209REFDETAIL ATO-252Reel Spectification-TO-252ABBDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.W E F D0D1P0P1P2A0B0K0T t115.901.657.401.4016.101.857.601.600.6260.0650.2910.0550.6340.0730.2990.0631.40 1.607.9010.4510.600.4110.4170.240.270.0090.0110.0550.0633.90 4.106.900.27110P00.1540.1618.100.3110.3191.90 2.100.0750.0830.100.00440.001.5752.780.10916.001.757.501.501.504.008.002.0010.500.6300.0690.2950.0590.0590.1570.3150.0790.4136.857.002.68 2.880.2700.2760.1050.11339.8040.201.5671.583Attention1,Any and all APM Microelectronics products described or contained herein do not have specificationsthat can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result inserious physical and/or material damage. Consult with your APM Microelectronics representative nearestyou before using any APM Microelectronics products described or contained herein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from using productsat values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronicsproducts described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the describ ed products in the independent state, and arenot guarantees of the performance, characteristics, and functions of the described products as mountedin the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that theseprobabilistic failures could give rise to accidents or events that could endanger human lives that couldgive rise to smoke or fire, or that could cause damage to other property. When designing equipment,adopt safety measures so that these kinds of accidents or events cannot occur. Such measures includebut are not limited to protective circuits and error prevention circuits for safe design, redundantdesign,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) describedor contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate andreliable, but no guarantees are made or implied regarding its use or any infringements of intellectualproperty rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" forthe APM Microelectronics product that you Intend to use.6。
呼吸机专用mos管APG130N06D 130A 60V TO-252
Qrr
68.3 73.0
ns IS=25 A, di/dt=100 nC A/μs
Peak reverse recovery current
Irrm
1.9
A
1、Calculated continuous current based on maximum allowable junction temperature.
nC VGS=10 V
V
Diode forward current
IS
130
Pulsed source current
ISP
Diode forward voltage
VSD
390
A
VGS<Vth
1.3
V IS=20 A, VGS=0 V
Reverse recovery time
trr
Reverse recovery charge
VGS ID
ID, pulse PD EAS
Tstg,Tj
±20 130 390 140 80 -55 to 150
Unit V V A A W mJ ℃
Thermal resistance, junction-case Thermal resistance, junction-ambient4)
RθJC RθJA
1.575 1.583
APG60N10D Rve1.0
臺灣永源微電子科技有限公司
APG130N06PIT
60V N-SGT Enhancement Mode MOSFET Attention
1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.
呼吸机专用mos管APG120N03NF 120A 30V DFN5x6
1General DescriptionAPG120N03NF use advanced SGT MOSFET technology to provide low R DS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggednessand suitable to use in Synchronous-rectification applications.FeaturesLow R DS(on) & FOMExtremely low switching lossExcellent stability and uniformity or InvertorsApplicationsConsumer electronic power supply Motor controlSynchronous-rectification Isolated DCSynchronous-rectification applicationsPackage Marking and Ordering InformationElectrical Characteristics at T j=25 ℃ unless otherwise specified23Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge CharacteristicsFig.5 Normalized V GS(th) vs T J Fig.6 Normalized R DSONvs T JAPG120N03NF30V N-SGT Enhancement Mode MOSFET4I ASV GS BV DSSV DD EAS=12L x I AS 2 xBV DSS BV DSS -V DDFig.8 Safe Operating Area Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching WaveformPackage Mechanical Data-DFN5*6-8L-JQ Single5Attention1,Any and all APM Microelectronics products described or contained herein do not have specificationsthat can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result inserious physical and/or material damage. Consult with your APM Microelectronics representative nearestyou before using any APM Microelectronics products described or contained herein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from using productsat values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronicsproducts described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the describ ed products in the independent state, and arenot guarantees of the performance, characteristics, and functions of the described products as mountedin the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that theseprobabilistic failures could give rise to accidents or events that could endanger human lives that couldgive rise to smoke or fire, or that could cause damage to other property. When designing equipment,adopt safety measures so that these kinds of accidents or events cannot occur. Such measures includebut are not limited to protective circuits and error prevention circuits for safe design, redundantdesign,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) describedor contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate andreliable, but no guarantees are made or implied regarding its use or any infringements of intellectualproperty rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" forthe APM Microelectronics product that you Intend to use.67。
呼吸机专用mos管 AP20G04S 40V 20A N+P
40V N+P-Channel Enhancement Mode MOSFETAP20G04S R ve3.1 臺灣永源微電子科技有限公司1DescriptionThe AP20G04S uses advanced trench technologyto provide excellent R DS(ON) and low gate charge .The complementary MOSFETs may be used to form alevel shifted high side switch, and for a host of other applications.General FeaturesN-ChannelV DS =40V,I D =20AR DS(ON) < 21mΩ @ V GS=10VR DS(ON) < 25mΩ @ V GS=4.5VP-ChannelV DS =-40V,I D = -18AR DS(ON) <38mΩ @ V GS=-10VR DS(ON) < 62mΩ @ V GS=-4.5VPackage Marking and Ordering InformationProduct ID Pack Marking Qty(PCS)AP20G04S SOP-8AP20G04S XXX YYYY3000Absolute Maximum Ratings ASymbol Parameter N Channel P Channel Unit V DSS Drain-Source Voltage 40 -40 V VGSS Gate-Source Voltage ±20 ±20 V T J Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °CI S Diode Continuous Forward Current 2 -2 AIDP Pulse Drain Current Tested V GS=10V(N),V GS=-10V(P) 30 -22 AI D Continuous Drain Current T A=25°C 7.5 -5.5A T A=70°C 6 -4.5P D Maximum Power Dissipation T A=25°C 2 2W T A=70°C 1.3 1.3R q JL Thermal Resistance-Junction to Lead Steady State 50 50 °C/WR q JA Thermal Resistance-Junction to Ambient t £ 10s 62.5 62.5°C/W Steady State b 110 110IAS a Avalanche Current, Single pulse L=0.5mH 10 10 AAP20G04S R ve 3.1 臺灣永源微電子科技有限公司2E AS aAvalanche Energy, Single pulseL=0.5mH2525mJSymbolParameterTest Conditions N Channel Unit Min. Typ. Max. BV DSS Drain-Source Breakdown Voltage V GS =0V, I DS =250m A 40 - - V I DSSZero Gate Voltage Drain CurrentV DS =32V, V GS =0V- - 1 m AT J =85°C- - 30 V GS(th) Gate Threshold Voltage V DS =V GS , I DS =250m A 1.5 2 2.5 V I GSSGate Leakage CurrentV GS =±20V, V DS =0V - - ±100 nA R DS(ON) c Drain-Source On-state Resistance V GS =10V, I DS =6A - 16 21 m W V GS =4.5V, I DS =5A - 18 25 V SD c Diode Forward Voltage I SD =1A, V GS =0V - 0.75 1.1 V t rr Reverse Recovery Time I DS =6A, dl SD /dt=100A/m s - 13 - ns Q rr Reverse Recovery Charge - 8.7 - nC R G Gate Resistance V GS =0V,V DS =0V,F=1MHz - 2.5 - WC iss Input Capacitance V GS =0V, V DS =20V,Frequency=1.0MHz - 815 - pFC oss Output Capacitance- 95 - C rss Reverse Transfer Capacitance - 60 - t d(ON) Turn-on Delay Time V DD =20V, R L =20W , I DS =1A, V GEN =10V, R G =6W- 7.8 - ns t r Turn-on Rise Time - 6.9 - t d(OFF) Turn-off Delay Time- 22.4 - t f Turn-off Fall Time - 4.8 - Q g Total Gate Charge V DS =20V, V GS =10V, I DS =6A- 15.7 22 nC Q g Total Gate Charge V DS =20V, V GS =4.5V, I DS =6A-7.5 10.5 Q gth Threshold Gate Charge - 1.85 - Q gs Gate-Source Charge - 3.24 - Q gdGate-Drain Charge-2.75-Note c :Pulse test ; pulse width £300s, duty cycle £2%. Note d :Guaranteed by design, not subject to production testing.40V N+P-Channel Enhancement Mode MOSFETAP20G04S R ve3.1 臺灣永源微電子科技有限公司3Symbol Parameter Test ConditionsP ChannelUnit Min. Typ. Max.BV DSS Drain-Source Breakdown Voltage V GS=0V, I DS=-250m A -40 - - VIDSS Zero Gate Voltage Drain Current V DS=-32V, V GS=0V - - -1 m AT J=85°C - - -30 mAVGS(th) Gate Threshold Voltage V DS=V GS, I DS=-250m A -1.5 -2 -2.5 V IGSS Gate Leakage Current V GS=±20V, V DS=0V - - ±100 nAR DS(ON) c Drain-Source On-state Resistance V GS=-10V, I DS=-5.5A - 30 38m W V GS=-4.5V, I DS=-3.5A - 46 62VSD c Diode Forward Voltage I SD=-1A, V GS=0V - -0.75 -1 Vt rr Reverse Recovery TimeI DS=-5.5A, dl SD/dt=100A/m s - 15 - nsQ rr Reverse Recovery Charge - 8 - nC R G Gate Resistance V GS=0V,V DS=0V,F=1MHz - 8 - WC iss Input CapacitanceV GS=0V, V DS=-20V,Frequency=1.0MHz - 668 -pFC oss Output Capacitance - 98 - C rss Reverse Transfer Capacitance - 72 -td(ON) Turn-on Delay TimeV DD=-20V, R L=20W,I DS=-1A, V GEN=-10V,R G=6W - 8.7 -nst r Turn-on Rise Time - 7 - td(OFF) Turn-off Delay Time - 31 - t f Turn-off Fall Time - 17 -Q g Total Gate Charge V DS=-20V, V GS=-10V, I DS=-5.5A- 15 -nCQ g Total Gate ChargeV DS=-20V, V GS=-4.5V, I DS=-5.5A - 7.5 -Q gth Threshold Gate Charge - 1.4 - Q gs Gate-Source Charge - 2.4 - Q gd Gate-Drain Charge - 3.5 - Note c:Pulse test; pulse width£300m s, duty cycle£2%.Note d:Guaranteed by design, not subject to production testing.40V N+P-Channel Enhancement Mode MOSFETAP20G04S R ve 3.1 臺灣永源微電子科技有限公司4N Channel Typical Operating CharacteristicsPower Dissipation P t o t - P o w e r (W )T j - Junction T emperature (°C)I D - D r a i n C u r r e n t (A )Drain CurrentT j - Junction Temperature (°C)Safe Operation AreaV DS - Drain - Source Voltage (V)I D - D r a i n C u r r e n t (A )N o r m a l i z e d T r a n s i e n t T h e r m a l R e s i s t a n c eThermal Transient Impedance Square Wave Pulse Duration (sec)0.00.40.81.21.62.02.40.01.53.04.56.07.59.00.010.11101003000.010.11101001E-30.010.1125 V DS - Drain - Source Voltage (V)I D - D r a i n C u r r e n t (A )I D - Drain Current (A)V GS - Gate - Source Voltage (V)T j - Junction T emperature (°C)Gate Threshold VoltageN o r m a li z e d T h r e s h o l d V l o t a g eN Channel Typical Operating Characteristics (Cont.)R D S (O N ) - O n - R e s i s t a n c e (m W )Gate-Source On Resistance0510152025308162432404856-50-2502550751001251500.20.40.60.81.01.21.41.66Drain-Source On ResistanceN o r m a l i z e d O n R e s i s t a n c eT j - Junction Temperature (°C)V SD - Source - Drain Voltage (V)Source-Drain Diode ForwardI S - S o u r c e C u r r e n t (A )V DS - Drain - Source Voltage (V)C - C a p a c i t a n c e (p F )Capacitance Gate ChargeQ G - Gate Charge (nC)V G S - G a t e -s o u r c e V o l t a g e (V )N Channel Typical Operating Characteristics (Cont.)-50-252550751001251500.20.40.60.81.01.21.41.61.82.00.1110300200400600800100012007P Channel Typical Operating CharacteristicsPower DissipationP t o t - P o w e r (W )T j - Junction T emperature (°C)-I D - D r a i n C u r r e n t (A )Drain Current T j - Junction Temperature (°C)Safe Operation Area -V DS - Drain - Source Voltage (V)-I D - D r a i n C u r r e n t (A )N o r m a l i z e d T r a n s i en t T h e r m a l R e s i s t a n c eThermal Transient Impedance Square Wave Pulse Duration (sec)204060801001201401600.00.40.81.21.62.02.4T A =25oC20406080100120140160123456T A =25oC,V G =-10V0.010.1110100R d s (o n ) L i m i t1s T A =25oC10ms 300m s 1ms 100msDC1E-41E-30.010.1110601E-30.010.112Mounted on 1in 2padR q JA : 62.5 oC/W0.010.020.050.10.2Single PulseDuty = 0.58 -V DS - Drain - Source Voltage (V)-I D - D r a i n C u r r e n t (A )-I D - Drain Current (A)-V GS - Gate - Source Voltage (V)T j - Junction T emperature (°C)Gate Threshold Voltage N o r m a l i z e dT h r e s h o l d V l o t a g eR D S (O N ) - O n - R e s i s t a n c e (m W )Gate-Source On Resistance 0481216202345678910020406080100120140-50-2502550751001251500.20.40.60.81.01.21.41.69Drain-Source On Resistance N o r m a l i z e d O n R e s i s t a n c eT j - Junction Temperature (°C)-V SD - Source - Drain Voltage (V)-I S - S o u r c e C u r r e n t (A )-V DS - Drain - Source Voltage (V)C - C a p a c i t a n c e (p F )CapacitanceGate Charge Q G - Gate Charge (nC)-V G S - G a t e -s ou r c e V o l t a g e (V )P Channel Typical Operating Characteristics (Cont.)0.20.40.60.81.01.21.41.61.82.00.00.30.60.9 1.2 1.50.1110200100200300400500600700800900100010Avalanche Test Circuit and WaveformsSwitching Time Test Circuit and Waveforms。
呼吸机专用mos管APG40N10D 40A 100V TO-252
General DescriptionAPG40N10D use advanced SGT MOSFET technology toprovide low RDS(ON), low gate charge, fast switchingand excellent avalanche characteristics.This device is specially designed to get better ruggednessand suitable to use inFeaturesLow RDS(on) & FOMExtremely low switching lossExcellent stability and uniformity or InvertorsApplicationsConsumer electronic power supplyMotor controlSynchronous-rectificationIsolated DCSynchronous-rectification applicationsProduct ID Pack Marking Qty(PCS)APG40N10D TO-252-3APG40N10D XXX YYYY2500Absolute Maximum Ratings at T j=25℃ unless otherwise notedParameter Symbol Value UnitDrain source voltage VDS 100 VGate source voltage VGS ±20 V Continuous drain current1), T C=25 ℃ID 40 APulsed drain current2), T C=25 ℃ID, pulse 120 APower dissipation3), T C=25 ℃P D72 WSingle pulsed avalanche energy5)EAS 30 mJOperation and storage temperature Tstg,Tj -55 to 150 ℃1 APG40N10D R ev1.0 臺灣永源微電子科技有限公司APG40N10D R ev 1.0 臺灣永源微電子科技有限公司2ParameterSymbol Value Unit Thermal resistance, junction-case RθJC 1.74 ℃/W Thermal resistance, junction-ambient 4)RθJA62℃/Wat T j =25 ℃ unless otherwise specifiedParameterSymbol Test condition Min. Typ. Max. Unit Drain-source breakdown voltageBV DSS V GS =0 V, I D =250 μA 100 V Gate threshold voltage V GS(th) V DS =V GS , I D =250 μA 1.0 2.5 V Drain-source on-state resistanceR DS(ON) V GS =10 V, I D =8 A 16 20 mΩ Drain-source on-state resistanceR DS(ON) V GS =4.5 V, I D =6 A26 mΩ Gate-source leakage current I GSS100 nA V GS =20 V-100 Drain-source leakage current I DSS V DS =100 V, V GS =0 V1 μA Input capacitance Ciss V GS =0 V, V DS =50 V, ƒ=1 MHz1190.6 pF Output capacitanceCoss 194.6 pF Reverse transfer capacitance Crss 4.1 pF Turn-on delay time td(on) V GS =10 V, V DS =50 V, R G =2.2 Ω, I D =10A17.8 ns Rise timet r 3.9 ns Turn-off delay time td(off) 33.5 ns Fall time t f 3.2 ns Total gate charge Q g I D =8 A, V DS =50 V, V GS =10 V 19.8 nC Gate-source charge Q gs 2.4 nC Gate-drain charge Q gd 5.3 nC Gate plateau voltage V plateau 3.2 V Diode forward current I S V GS <V th40 Pulsed source current I SP 120 A Diode forward voltage V SD I S =8 A, V GS =0 V1.3 V Reverse recovery time t rr I S =8 A, di/dt=100 A/μs 50.2 ns Reverse recovery charge Q rr 95.1 nC Peak reverse recovery currentI rrm2.5AAPG40N10D R ev 1.0 臺灣永源微電子科技有限公司3Electrical Characteristics DiagramsDS4 APG40N10D R ev1.0 臺灣永源微電子科技有限公司APG40N10D100V N-SGT Enhancement Mode MOSFETAPG40N10D Rev 1.0 臺灣永源微電子科技有限公司5Figure 4, Diode reverse recovery test circuit & waveformsFigure 1 , G ate c h arge t e st c i rcuit & w a veformFigure , 2 S w itching t ime t e st c i rcuit & w a veformsFigure , 3 Unclamped i n ductive s w itching (UIS) t e st c i rcuit & w a veformsAPG40N10D100V N-SGT Enhancement Mode MOSFETAPG40N10D R ev 1.0 6Package Mechanical DataDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.A A2B C DE G H LV1V22.1000.660.40 2.500.100.860.600.08300.0260.0160.0980.0040.0340.0246.409.5010.700.3740.4210.0530.0655.906.30L20°6°0.2320.2486.800.2520.2684.47 4.670.1760.1841.09 1.210.0430.0487°1.351.650°6°7°B2 5.18 5.480.2020.216C20.440.580.0170.023D1E15.30REF4.630.1820.209REFB2E HBGLC2DETAIL ADETAIL AACV 1V 1V 2A 2DV 1E1D 1L2TO-252Reel Spectification-TO-252WEFD 0P0P2P1D 1Tt1B 0K0A05°AAA BBB BDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.W E F D0D1P0P1P2A0B0K0T t115.901.657.401.4016.101.857.601.600.6260.0650.2910.0550.6340.0730.2990.0631.40 1.607.9010.4510.600.4110.4170.240.270.0090.0110.0550.0633.90 4.106.900.27110P00.1540.1618.100.3110.3191.90 2.100.0750.0830.100.00440.001.5752.780.109Φ329Φ132016.001.757.501.501.504.008.002.0010.500.6300.0690.2950.0590.0590.1570.3150.0790.4136.857.002.68 2.880.2700.2760.1050.11339.8040.201.5671.583APG40N10D 100V N-SGT Enhancement Mode MOSFETAPG40N10D R ev1.0 7Attention1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by anymeans,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.。
贴片场效应管 MOS管ME20P03 TO-252 规格书推荐
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current
TC=25℃ TC=70℃
Pulsed Drain Current Maximum Power Dissipation
*The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V V A A W ℃ ℃/W
DCC 正式發行
Mar, 2012-Ver1.3
01
P- Channel 30-V (D-S) MOSFET
ME20P03/ME20P03-G
Electrical Characteristics (TC=25℃ Unless Otherwise Specified)
ME20P03/ME20P03-G
TO-252 Package Outline
Mar, 2012-Ver1.3
SYMBOL A B C D D1 E E1 L1 L2 L3 H P
MIN 2.10 0.40 0.40 5.30 2.20 6.30 4.80 0.90 0.50 0.00 8.90
2.30 BSC
Unit
V V nA μA mΩ V
nC
pF
ns
Mar, 2012-Ver1.3
DCC 正式發行
02
P- Channel 30-V (D-S) MOSFET
Typical Characteristics (TJ =25℃ Noted)
呼吸机专用mos管 AP15N10D 15A 100V TO-252
1DescriptionThe AP15N10D uses advanced trench technology and design to provide excellent R DS(ON) with low gat e charge. It can be used in a wide variety of applications. It is ESD protested.General FeaturesV DS =100V,I D =15AR DS(ON) <112m Ω @ V GS =10VApplicationPower switch DC/DC convertersCElectrical Characteristics (T J=25℃, unless otherwise noted)V DD=50V , V GS=10V ,R G=3.3I D=10A1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%3.The EAS data shows Max. rating . The test condition is V DD=25V,V GS=10V,L=0.1mH,I AS=11A4.The power dissipation is limited by 150℃ junction temperature5.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.23150Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V vs. T4I AS V GS BV DSSV DD EAS=12L x I AS 2 x BV DSSBV DSS -V DDFig.8 Safe Operating AreaFig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform5Package Mechanical DataDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.A A2B C DE G H LV1V22.1000.660.40 2.500.100.860.600.08300.0260.0160.0980.0040.0340.0246.409.5010.700.3740.4210.0530.0655.906.30L20°6°0.2320.2486.800.2520.2684.47 4.670.1760.1841.09 1.210.0430.0487°1.351.650°6°7°B2 5.18 5.480.2020.216C20.440.580.0170.023D1E15.30REF4.630.1820.209REFDETAIL ATO-252Reel Spectification-TO-252ABBDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.W E F D0D1P0P1P2A0B0K0T t115.901.657.401.4016.101.857.601.600.6260.0650.2910.0550.6340.0730.2990.0631.40 1.607.9010.4510.600.4110.4170.240.270.0090.0110.0550.0633.90 4.106.900.27110P00.1540.1618.100.3110.3191.90 2.100.0750.0830.100.00440.001.5752.780.10916.001.757.501.501.504.008.002.0010.500.6300.0690.2950.0590.0590.1570.3150.0790.4136.857.002.68 2.880.2700.2760.1050.11339.8040.201.5671.583Attention1,Any and all APM Microelectronics products described or contained herein do not have specificationsthat can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result inserious physical and/or material damage. Consult with your APM Microelectronics representative nearestyou before using any APM Microelectronics products described or contained herein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from using productsat values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronicsproducts described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the describ ed products in the independent state, and arenot guarantees of the performance, characteristics, and functions of the described products as mountedin the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that theseprobabilistic failures could give rise to accidents or events that could endanger human lives that couldgive rise to smoke or fire, or that could cause damage to other property. When designing equipment,adopt safety measures so that these kinds of accidents or events cannot occur. Such measures includebut are not limited to protective circuits and error prevention circuits for safe design, redundantdesign,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) describedor contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate andreliable, but no guarantees are made or implied regarding its use or any infringements of intellectualproperty rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" forthe APM Microelectronics product that you Intend to use.6。
呼吸机专用mos管 AP2N100D 2A 1000V TO-252
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol VDS
Parameter Drain-Source Voltage (VGS = 0V)
ID
Continuous Drain Current
IDM VGS
Pulsed Drain Current Gate-Source Voltage
Figure 7. Capacitance
10 3 Ciss
Figure 8. Gate Charge
VDD = 200V VDD =500V
10 2
VDD = 800V
Coss
10 1
Crss
VGS = 0V f = 1MHz
10 0
VDS, Drain-to-Source Voltage (V) Figure 9. Transient Thermal Impedance
Qg, Total Gate Charge (nC) Figure 10. Transient Thermal Impedance
Tp, Pulse Width (s)
Tp, Pulse Width (s)
4
AP20N03D Rve3.8
臺灣永源微電子科技有限公司
5
V1 V2
Package Mechanical Data
Application
Uninterruptible Power Supply(UPS) Power Factor Correction (PFC)
Package Marking and Ordering Information
Product ID
呼吸机专用mos管 AP15P04D -15A -40V TO-252
40V P-Channel Enhancement Mode MOSFET1General DescriptionThe AP15P04D uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as -4.5V. This device is suitable for use as a wide variety of applications.FeaturesV DS = -40V,ID =-15AR DS(ON) < 36mΩ @ V GS =-10V R DS(ON) < 52mΩ @ V GS =-4.5VHigh Power and current handing capability Lead free product is acquired Surface Mount PackageApplicationPWM applications Load switchPower managementAbsolute Maximum Ratings (T A =25℃)40V P-Channel Enhancement Mode MOSFET2RJCThermal Resistance,Junction-to-Case4℃/WElectrical Characteristics (TA=25℃unless otherwise noted)Symbol ParameterConditionsMin Typ Max Unit BV DSS Drain-Source Breakdown VoltageV GS =0V I D =-250μA -40V I DSS Zero Gate Voltage Drain Current V DS =-32V,V GS =0V -1 μA I GSS Gate-Body Leakage Current V GS =±20V,V DS =0V ±100 nA V GS(th) Gate Threshold Voltage V DS =V GS ,I D =-250μA -1 -2 -3 V g FS Forward Transconductance V DS =-5V,I D =-10A 25 S R DS(ON)Drain-Source On-State ResistanceV GS =-10V, I D =-20A 2536 mΩV GS =-4.5V, I D =-10A42 52 mΩ C issInput Capacitance V DS =-25V,V GS =0V,f=1.0MHz840 pF C oss Output Capacitance 92 pF C rss Reverse Transfer Capacitance 60 pF t d(on) Turn-on Delay Time V GS =-10V, V DS =-20V, R L =1.6,R GEN =35 nS t r Turn-on Rise Time 12 nS t d(off) Turn-Off Delay Time 20 nS t f Turn-Off Fall Time 4.5 nS Q g Total Gate Charge V GS =-10V, V DS =-20V, I D =-15A20 nC Q gs Gate-Source Charge 2.5 nC Q gd Gate-Drain Charge4.5 nC I SD Source-Drain Current(Body Diode) -20 A V SDForward on VoltageV GS =0V,I S =-20A-1.2V40V P-Channel Enhancement Mode MOSFET3Switch Time Test Circuit and Switching Waveforms :TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)Figure1. Power DissipationFigure2. Drain CurrentFigure3. Output CharacteristicsFigure4. Transfer Characteristics-I D D r a i n C u r r e n t (A )T J -Junction Temperature(℃)P o w e r D i s s i p a t i o n (W )T J -Junction Temperature(℃)40V P-Channel Enhancement Mode MOSFET4Figure5. Capacitance Figure6. R DS(ON) vs Junction TemperatureFigure7. V GS(th) vs Junction TemperatureFigure8. Gate Charge WaveformsFigure9. Normalized Maximum Transient Thermal ImpedanceC C a p a c i t a n c e (pF )-VDS Drain-to-Source Voltage(V) -V g s (V )Qg(nC)40V P-Channel Enhancement Mode MOSFETTO-252 Package Information540V P-Channel Enhancement Mode MOSFETAttention1,Any and all APM Microelectronics products described or contained herein do not have specificationsthat can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using productsat values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and arenot guarantees of the performance, characteristics, and functions of the described products as mountedin the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that couldgive rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundantdesign,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.6。
呼吸机专用mos管 AP30P06D -30A -60V TO-252
1DESCRIPTIONThe AP30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES V DS =- 60V,I D =-30A R DS(ON) < 40mΩ @ V GS =-10V R DS(ON) < 55mΩ @ V GS =-4.5VHigh Power and current handing capability Lead free product is acquired Surface Mount Package Application PWM applications Load switch Power managementParameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS V GS=0V I D=-250μA -60 V Zero Gate Voltage Drain Current I DSS V DS=-48V,V GS=0V -1 μA Gate-Body Leakage Current I GSS V GS=±20V,V DS=0V ±100 nA Gate Threshold Voltage V GS(th)V DS=V GS,I D=-250μA -1 -1.8 -2.5 VDrain-Source On-State Resistance R DS(ON)V GS=-10V, I D=-20A 31 40 mΩ V GS=-4.5V, I D=-20A 42 55 mΩForward Transconductance g FS V DS=-5V,I D=-20A 5 SInput Capacitance C lssV DS=-30V,V GS=0V,F=1.0MHz 3060 PFOutput Capacitance C oss300 PF Reverse Transfer Capacitance C rss205 PFTurn-on Delay Time t d(on)V DS=-30V,V GS=-10V,R GEN=3ΩI D=1A 14 nSTurn-on Rise Time t r20 nS Turn-Off Delay Time t d(off)40 nS Turn-Off Fall Time t f19 nST otal Gate Charge Q gV DS=-30V,I D=-20A,V GS=-10V 48 nCGate-Source Charge Q gs11 nCGate-Drain Charge Q gd10 nCBody Diode Reverse Recovery Time T rrI F=-20A, dI/dt=100A/µs40 nSBody Diode Reverse Recovery Charge Q rr56 nCDiode Forward Voltage (Note 3) V SD V GS=0V,I S=-1A -0.72 -1 VNOTES:1. Repetitive Rating: Pulse width limited by maximum junction temperature.2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec.3. Pulse T est: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.4. Guaranteed by design, not subject to production testing.23TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICSV INV t Figure 2:Switching WaveformsFigure 1:Switching Test CircuitFigure 3 Power DissipationT J -Junction Temperature(℃) P D P o w e r (W )D - D r a i n C u r r e n t (A )-I T J -Junction Temperature(℃)Figure 4 Drain Current-I D R d s o n O n -R e s i s t a n c e (m Ω)- D r a i n C u r r e n t (A )-I -Vds Drain-Source Voltage (V) D - Drain Current (A)Figure 6 Drain-Source On-ResistanceFigure 5 Output CHARACTERISTICS4-IN o r m a l i z e d O n -R e s i s t a n c eD - D r a i n C u r r e n t (A )-Vgs Gate-Source Voltage (V)T J -Junction Temperature(℃)Figure 7 Transfer Characteristics Figure 8 Drain-Source On-ResistanceR d s o n O n -R e s i s t a n c e (m Ω)C C a p a c i t a n c e (p F )-Vgs Gate-Source Voltage (V)-Vds Drain-Source Voltage (V)Figure 10 Capacitance vs VdsFigure 9 Rdson vs Vgs-V g s G a t e -S o u r c e V o l t a g e (V )s - R e v e r s e D r a i n C u r r e n t (A )-I Qg Gate Charge (nC)-Vsd Source-Drain Voltage (V)Figure 11 Gate ChargeFigure 12 Source- Drain Diode Forward5D - D r a i n C u r r e n t (A )-IVds Drain-Source Voltage (V)Figure 13 Safe Operation AreaSquare Wave Pluse Duration(sec)Figure 14 Normalized Maximum Transient Thermal ImpedanceZ t h J A N o r m a l i z e d T r a n s i e n t T h e r m a l R e s i s t a n ceTO-252 Package InformationSymbolDimensions In Millimeters Dimensions In Inches Min.Max.Min.Max.A 2.200 2.400 0.087 0.094A1 0.000 0.127 0.000 0.005b 0.660 0.860 0.026 0.034c 0.460 0.580 0.018 0.023D 6.500 6.700 0.256 0.264D1 5.100 5.460 0.201 0.215D2 4.830 TYP. 0.190 TYP.E 6.000 6.200 0.236 0.244e 2.186 2.386 0.086 0.094L 9.800 10.400 0.386 0.409L1 2.900 TYP. 0.114 TYP.L21.400 1.700 0.055 0.067L3 1.600 TYP. 0.063 TYP.L4 0.600 1.000 0.024 0.039Φ 1.100 1.300 0.043 0.051θ 0°8°0°8°h 0.000 0.300 0.000 0.012V 5.350 TYP. 0.211 TYP.6Attention1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems,or other applications whose failure can be reasonably expected to result in serious physical and/or materialdamage. Consult with your APM Microelectronics representative nearest you before using any APMMicroelectronics products described or contained herein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or otherparameters) listed in products specifications of any and all APM Microelectronics products described or containedherein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of theperformance, characteristics, and functions of the described products as mounted in the customer’s products orequipment. T o verify symptoms and states that cannot be evaluated in an independent device, the customer shouldalways evaluate and test devices mounted in the customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could giverise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that couldcause damage to other property. When designing equipment, adopt safety measures so that these kinds ofaccidents or events cannot occur. Such measures include but are not limited to protective circuits and errorprevention circuits for safe design, redundant design,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not beexported without obtaining the export license from the authorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by an y means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without theprior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guaranteesare made or implied regarding its use or any infringements of intellectual property rights or other rights of thirdparties.8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronicsproduct that you Intend to use.9, this catalog provides information as of Sep.2014. Specifications and information herein are subject to change without notice7。
20n03场效应管参数
20n03场效应管参数20n03是一种场效应管,也被称为N沟道金属氧化物半导体场效应管(NMOSFET)。
下面将解释20n03场效应管的主要参数:1. 额定电压(VDS):20n03场效应管的额定电压是指可以在其两个端口之间施加的最大直流电压。
这个参数是非常重要的,因为超过额定电压可能会导致管子损坏。
2. 额定电流(ID):20n03场效应管的额定电流是指在特定温度和电源电压下,可以通过管子的最大电流。
超过额定电流可能会导致过热和管子损坏。
3. 阈值电压(Vth):20n03场效应管的阈值电压是指在其栅极和源极之间应用的电压,开始导通的电压。
当栅极电压超过阈值电压时,管子开始导通。
4. 最大功率(PD):20n03场效应管的最大功率是指在特定条件下可以承受的最大功率。
超过最大功率可能会导致管子过热并损坏。
5. 开启电阻(RDS(on)):20n03场效应管的开启电阻是指当管子完全导通时,通过管子的电阻。
这个参数反映了管子导通时的损耗。
6. 耗散功率(PD):20n03场效应管的耗散功率是指在正常工作条件下,管子消耗的功率。
这个参数对于设计电路和散热系统非常重要。
7. 输出电容(Coss):20n03场效应管的输出电容是指当管子导通时,栅极和源极之间的电容。
这个参数对于高频应用和交流电路设计非常重要。
8. 上升时间(tr)和下降时间(tf):20n03场效应管的上升时间和下降时间分别是指从50%到90%和90%到50%的开关时间。
这些参数反映了管子开关速度的快慢。
9. 开关损耗(Psw):20n03场效应管的开关损耗是指在开关过程中产生的能量损耗。
这个参数对于高频开关电路和功率转换器设计非常重要。
10. 芯片温度(Tj):20n03场效应管的芯片温度是指管子内部的温度。
过高的芯片温度可能会导致管子损坏。
因此,散热系统的设计对于保持芯片温度在合理范围内非常重要。
这些是20n03场效应管的一些重要参数,可以通过它们来评估管子在特定应用中的性能和可靠性。
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1The AP20N03D uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as aBattery protection or in other Switching application.V DS = 30V I D =20AR DS(ON) < 25m Ω@ V GS =10VBattery protection Load switchUninterruptible power supplyPackage Marking and Ordering InformationDescription General Features ApplicationElectrical Characteristics (T C=25℃unless otherwise specified)=10A=15V , V1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.2The data tested by pulsed , pulse width .The EAS data shows Max. rating .3he test condition is V≦ 300us , duty cycle DD=25≦V,V 2%GS =10V,L=0.1mH,I AS=12.7A4.The power dissipation is limited by 150℃ junction temperature5.The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.23Typical Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge CharacteristicsFig.5 Normalized V vs. T4VI ASV GS BV DSSV DDEAS=12L x I AS 2 x BV DSSBV DSS -V DDFig.8 Safe Operating AreaFig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform5Package Mechanical DataDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.A A2B C DE G H LV1V22.1000.660.40 2.500.100.860.600.08300.0260.0160.0980.0040.0340.0246.409.5010.700.3740.4210.0530.0655.906.30L20°6°0.2320.2486.800.2520.2684.47 4.670.1760.1841.09 1.210.0430.0487°1.351.650°6°7°B2 5.18 5.480.2020.216C20.440.580.0170.023D1E15.30REF4.630.1820.209REFDETAIL ATO-252Reel Spectification-TO-252ABBDimensionsMillimeters Inches Ref.Min.Typ.Max.Min.Typ.Max.W E F D0D1P0P1P2A0B0K0T t115.901.657.401.4016.101.857.601.600.6260.0650.2910.0550.6340.0730.2990.0631.40 1.607.9010.4510.600.4110.4170.240.270.0090.0110.0550.0633.90 4.106.900.27110P00.1540.1618.100.3110.3191.90 2.100.0750.0830.100.00440.001.5752.780.10916.001.757.501.501.504.008.002.0010.500.6300.0690.2950.0590.0590.1570.3150.0790.4136.857.002.68 2.880.2700.2760.1050.11339.8040.201.5671.583Attention1,Any and all APM Microelectronics products described or contained herein do not have specificationsthat can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result inserious physical and/or material damage. Consult with your APM Microelectronics representative nearestyou before using any APM Microelectronics products described or contained herein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from using productsat values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronicsproducts described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the describ ed products in the independent state, and arenot guarantees of the performance, characteristics, and functions of the described products as mountedin the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that theseprobabilistic failures could give rise to accidents or events that could endanger human lives that couldgive rise to smoke or fire, or that could cause damage to other property. When designing equipment,adopt safety measures so that these kinds of accidents or events cannot occur. Such measures includebut are not limited to protective circuits and error prevention circuits for safe design, redundantdesign,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services) describedor contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate andreliable, but no guarantees are made or implied regarding its use or any infringements of intellectualproperty rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" forthe APM Microelectronics product that you Intend to use.6。