s8050中文资料_数据手册_参数
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万联芯城
电子元器件采购网-万联芯城 提供中小批量 电子元器件一站式配套采购业务，保证所售产品均为优质原装现 货，万联芯城主打的优势授权代理品牌产品，包括长电科技，顺 络电子，先科 ST 等，价格优势明显。万联芯城已与全国各大终 端工厂企业形成战略合作伙伴关系，欢迎广大采购客户咨询相关 业务。点击进入万联芯城
UTC S8050NPN外延硅晶体管S8050半导体技术有限公司1QW-R201-013,ALOW电压高电流小 信号特性*集电极电流可达700mA*集电极-发射极电压可达20v *，补充S8550TO-9211:发射极 2:基数3:COLLECTORABSOLUTE最高评级(Ta = 25°C,除非另有说 明)PARAMETERSYMBOLVALUEUNITCollector-Base VoltageVCBO30VCollector-Emitter VoltageVCEO20VEmitter-Base VoltageVEBO5VCollector耗散(Ta = 25°C)Pc1WCollector CurrentIc700mAJunction TemperatureTj150°CStorage temperaturetstg - 65 ~ + 150° CELECTRICAL特征(Ta = 25°C,除非另有说明)PARAMETERSYMBOLTEST CONDITIONSMINTYPMAXUS8050NITCollector-Base击穿VoltageBVCBO-emitter击穿VoltageBVCEOIc = 1 ma,IB = 020 vemitter-base分解VoltageBVEBOIE = 100 a,Ic = 05 vcollector截止CurrentICBOVCB = 30 v,IE = 01 aemitter截止CurrentIEBOVEB = 5 v,Ic = 0100 nadc电流增益(注意)hFE1hFE2hFE3VCE = 1 v,Ic = 1 mAVCE = 1 v,Ic = 150 mAVCE = 1 v,Ic = 500 ma10012040110400collector-emitter饱和VoltageVCE(坐)Ic = 500 ma,IB = 50 ma0.5vbase-emitter饱和度VoltageVBE(satS8050)Ic=500mA,IB= 50ma1.2 vbase -发射器饱和 VoltageVBEVCE=1V,Ic=10mA1.0VCurrent Gain Bandwidth ProductfTVCE=10V,Ic=50mA100MHzOutput capacity itancecobvcb =10V,IE=0f=1MHz9.0p绝对 最大额定值(Ta = 25°C,除非另有说明)PARAS8050METERSYMBOLRATINGSUNITCollectorBase VoltageVCBO30VCollector-Emitter VoltageVCEO20VEmitter-Base VoltageVEBO5VCollector CurrentIc700mACollector耗散(Ta = 25°C)Pc1WJunction TemperatureTJ150°CStorage temperaturetstg - 65 ~ + 150°CNote:绝对最大额定参数的值超过此设备可以永久损坏。绝对 最大额定值仅为应力额定值，功能器S8050件操作不包含在内。电特性(Ta = 25°C,除非另 有说明)PARAMETERSYMBOLTEST CONDITIONSMINTYPMAXUNITCollector-Base击穿 VoltageBVCBOIc = 100μa,IE = 030 vcollector-emitter击穿VoltageBVCEOIc = 1 ma,IB = 020 vemitter-base分解VoltageBVEBOIE = 100μa,Ic = 05 vcollector截止CurrentICBOVCB = 30 v,IE = 01μaemitter截止CurrentIEBOVEB = 5 v,Ic = 0100 nahfe1vce = 1 v,Ic = 1 ma100hfe2vce = 1 v,Ic = 150 mA120110400DC当前GainhFE3VCE = 1 v,Ic = 500 ma40collector-emitter饱和 VoltageVCE(坐)Ic马= 500,IB= 50ma0.5 vbase -发射器饱和度VoltageVBE(SAT) Ic=500mA, IB= 50ma1.2 vbase -发射器饱和度VoltageVBEVCE=1V, Ic=10mA1.0VCurrent Gain Bandwidth ProductfTVCE=10V, Ic= 50ma100mhz100mhzS8050输出容量itancecobvcb =10V, icb20 2h282hfpv25
万联芯城
电子元器件采购网-万联芯城 提供中小批量 电子元器件一站式配套采购业务，保证所售产品均为优质原装现 货，万联芯城主打的优势授权代理品牌产品，包括长电科技，顺 络电子，先科 ST 等，价格优势明显。万联芯城已与全国各大终 端工厂企业形成战略合作伙伴关系，欢迎广大采购客户咨询相关 业务。点击进入万联芯城
UTC S8050NPN外延硅晶体管S8050半导体技术有限公司1QW-R201-013,ALOW电压高电流小 信号特性*集电极电流可达700mA*集电极-发射极电压可达20v *，补充S8550TO-9211:发射极 2:基数3:COLLECTORABSOLUTE最高评级(Ta = 25°C,除非另有说 明)PARAMETERSYMBOLVALUEUNITCollector-Base VoltageVCBO30VCollector-Emitter VoltageVCEO20VEmitter-Base VoltageVEBO5VCollector耗散(Ta = 25°C)Pc1WCollector CurrentIc700mAJunction TemperatureTj150°CStorage temperaturetstg - 65 ~ + 150° CELECTRICAL特征(Ta = 25°C,除非另有说明)PARAMETERSYMBOLTEST CONDITIONSMINTYPMAXUS8050NITCollector-Base击穿VoltageBVCBO-emitter击穿VoltageBVCEOIc = 1 ma,IB = 020 vemitter-base分解VoltageBVEBOIE = 100 a,Ic = 05 vcollector截止CurrentICBOVCB = 30 v,IE = 01 aemitter截止CurrentIEBOVEB = 5 v,Ic = 0100 nadc电流增益(注意)hFE1hFE2hFE3VCE = 1 v,Ic = 1 mAVCE = 1 v,Ic = 150 mAVCE = 1 v,Ic = 500 ma10012040110400collector-emitter饱和VoltageVCE(坐)Ic = 500 ma,IB = 50 ma0.5vbase-emitter饱和度VoltageVBE(satS8050)Ic=500mA,IB= 50ma1.2 vbase -发射器饱和 VoltageVBEVCE=1V,Ic=10mA1.0VCurrent Gain Bandwidth ProductfTVCE=10V,Ic=50mA100MHzOutput capacity itancecobvcb =10V,IE=0f=1MHz9.0p绝对 最大额定值(Ta = 25°C,除非另有说明)PARAS8050METERSYMBOLRATINGSUNITCollectorBase VoltageVCBO30VCollector-Emitter VoltageVCEO20VEmitter-Base VoltageVEBO5VCollector CurrentIc700mACollector耗散(Ta = 25°C)Pc1WJunction TemperatureTJ150°CStorage temperaturetstg - 65 ~ + 150°CNote:绝对最大额定参数的值超过此设备可以永久损坏。绝对 最大额定值仅为应力额定值，功能器S8050件操作不包含在内。电特性(Ta = 25°C,除非另 有说明)PARAMETERSYMBOLTEST CONDITIONSMINTYPMAXUNITCollector-Base击穿 VoltageBVCBOIc = 100μa,IE = 030 vcollector-emitter击穿VoltageBVCEOIc = 1 ma,IB = 020 vemitter-base分解VoltageBVEBOIE = 100μa,Ic = 05 vcollector截止CurrentICBOVCB = 30 v,IE = 01μaemitter截止CurrentIEBOVEB = 5 v,Ic = 0100 nahfe1vce = 1 v,Ic = 1 ma100hfe2vce = 1 v,Ic = 150 mA120110400DC当前GainhFE3VCE = 1 v,Ic = 500 ma40collector-emitter饱和 VoltageVCE(坐)Ic马= 500,IB= 50ma0.5 vbase -发射器饱和度VoltageVBE(SAT) Ic=500mA, IB= 50ma1.2 vbase -发射器饱和度VoltageVBEVCE=1V, Ic=10mA1.0VCurrent Gain Bandwidth ProductfTVCE=10V, Ic= 50ma100mhz100mhzS8050输出容量itancecobvcb =10V, icb20 2h282hfpv25