SMA半导体放电管规格书
ASEMI SS34(DO-214AC SMA)肖特基二极管规格书,中文资料
ASEMI SS34(DO-214AC SMA)肖特基二极管规格书，中文资料
我想用于充电器，可以吗？尺寸是多少呢？详见下解：
ASEMI品牌的SS34是3A 40V的贴片小二极管，属于肖特基封装，SMA超薄封装，小功率的，常用于家用的小功率电器，也常用于充电器，适配器
正向电流：3A
反向耐压：40V
芯片材质：GPP硅芯片
漏电流：0.5uA
操作温度：-40℃~150℃
正向电压：0.55V-0.95V
浪涌电流：100A
芯片尺寸：60mil
引线数量：2个
恢复时间：5ns
包装方式：5000/盘
这个品牌的打标采用的是镭射激光打标，不褪色，黑胶材质，外形黑体部分用环氧塑脂材料，包封稳定性好，引脚是无氧铜材质，导电性能好
常规包装是2000/盘
尺寸如下：
规格书。
带SMA接口的脉冲电压抑制器说明说明书
SMAJE400 W Transient voltage suppressorProduct features• Low profile SMA package • Excellent clamping capability•400 W peak pulse power capability at 10/1000 μs waveform• Typical I R less than 1 μA above 10 V•Fast response time: typically less than 1.0 ps from 0 V to V BR minimum•High temperature reflow soldering: +260 °C /40 s at terminal•Plastic package meets UL 94 V-0 flammability rating• Meets moisture sensitivity level (MSL) level 1•Terminal: Solder plated leads, solderable per J-STD-002•For surface mounted applications in order to optimize board space•UL 497B recognized.File No. : E198449 Guide QVGQ2Applications• Consumer electronics • Telecommunications • Computing and servers • Appliances• Industrial automation •Mobile and wearablesEnvironmental compliance and general specificationsSMAJE 5-0 C AFamily name V R voltage(“-” indicates decimal point) Bi-/Uni-Directional(Blank=Uni, C=Bi)Voltage toleranceOrdering part numberPIN configurationPb HALOGENHF FREE2Technical Data 11213Effective November 2020SMAJE400 W Transient voltage suppressor/electronicsParameterSymbolValueUnitStorage operating junction temperature range T STG / T J -55 to +150°C Steady state power dissipation at T L = +75 °C P M(AV) 3.3W Peak pulse power dissipation on 10/1000 μs waveformP PP 400W Maximum instantaneous forward voltage at 100 A for unidirectionalV F 5.0V Peak forward surge current, 8.3 ms single half sine wave 1I FSM 60A Typical thermal resistance junction to lead R JL 30°C/W Typical thermal resistance junction to ambientR JA120°C/WAbsolute maximum ratings(+25 °C, RH=45%-75%, unless otherwise noted)1. Measured on 8.3 ms single half sine wave or equivalent square wave for unidirectional device only, duty cycle = 4 per minute maximumPackaging information (mm)Drawing not to scale.Supplied in tape and reel packaging, 5,000 parts per 13” diameter reel (EIA-481 compliant)Mechanical parameters, pad layout- mmMillimetersInches Dimension MinimumMaximumMinimumMaximumA 2.60 3.000.1020.118B 4.15 4.650.1630.183C 1.25 1.650.0490.065D 0.95 1.520.0370.060E 4.90 5.300.1930.209F 0.0510.2030.0020.008G 0.150.310.0060.012H 2.00 2.440.0790.096J 2.000.079K 2.300.091L1.800.071Part markingDimension Millimeters InchesA0 2.79 ± 0.30.110 ± 0.012B0 5.33 ± 0.30.210 ± 0.012C 330.013.0 D0 1.55 ± 0.10.061 ± 0.004E 1.75 ± 0.20.069 ± 0.008E113.3 ± 0.30.524 ± 0.012F 5.50 ± 0.20.217 ± 0.008P0 4.00 ± 0.20.157 ± 0.008P1 4.00 ± 0.20.157 ± 0.008P2 2.00 ± 0.2 0.079 ± 0.008W 12.0 ± 0.20.472 ± 0.008W115.7 ± 2.00.618 ± 0.079Cathode band (Uni-polar only)Part marking: xxxx = Date codeyy- Refer to marking designator listed in Electrical Characteristics table3Technical Data 11213Effective November 2020SMAJE400 W Transient voltage suppressor /electronics Part number Marking V RI R @ V R V BR @ I T I TV C @ I PP I PP Uni-polarBi-polarUni Bi(V)(μA)min (V)max (V)(mA)max (V)(A)SMAJE5-0A SMAJE5-0CA HE TE 5120 6.47109.243.5SMAJE6-0A SMAJE6-0CA HG TG 6120 6.677.371010.338.8SMAJE6-5A SMAJE6-5CA HK TK 6.5807.227.981011.235.7SMAJE7-0A SMAJE7-0CA HM TM 7507.788.6101233.3SMAJE7-5A SMAJE7-5CA HP TP 7.5508.339.21112.931SMAJE8-0A SMAJE8-0CA HR TR 8208.899.83113.629.4SMAJE8-5A SMAJE8-5CA HT TT 8.5109.4410.4114.427.8SMAJE9-0A SMAJE9-0CA HV TV 951011.1115.426SMAJE10A SMAJE10CA HX TX 10211.112.311723.5SMAJE11A SMAJE11CA HZ TZ 11112.213.5118.222SMAJE12A SMAJE12CA IE UE 12113.314.7119.920.1SMAJE13A SMAJE13CA IG UG 13114.415.9121.518.6SMAJE14A SMAJE14CA IK UK 14115.617.2123.217.3SMAJE15A SMAJE15CA IM UM 15116.718.5124.416.4SMAJE16A SMAJE16CA IP UP 16117.819.712615.4SMAJE17A SMAJE17CA IR UR 17118.920.9127.614.5SMAJE18A SMAJE18CA IT UT 1812022.1129.213.7SMAJE20A SMAJE20CA IV UV 20122.224.5132.412.4SMAJE22A SMAJE22CA IX UX 22124.426.9135.511.3SMAJE24A SMAJE24CA IZ UZ 24126.729.5138.910.3SMAJE26A SMAJE26CA JE VE 26128.931.9142.19.5SMAJE28A SMAJE28CA JG VG 28131.134.4145.48.8SMAJE30A SMAJE30CA JK VK 30133.336.8148.48.3SMAJE33A SMAJE33CA JM VM 33136.740.6153.37.5SMAJE36A SMAJE36CA JP VP 3614044.2158.1 6.9SMAJE40A SMAJE40CA JR VR 40144.449.1164.5 6.2SMAJE43A SMAJE43CA JT VT 43147.852.8169.4 5.8SMAJE45A SMAJE45CA JV VV 4515055.3172.7 5.5SMAJE48A SMAJE48CA JX VX 48153.358.9177.4 5.2SMAJE51A SMAJE51CA JZ VZ 51156.762.7182.4 4.9SMAJE54A SMAJE54CA RE WE 5416066.3187.1 4.6SMAJE58A SMAJE58CA RG WG 58164.471.2193.6 4.3SMAJE60A SMAJE60CA RK WK 60166.773.7196.8 4.1SMAJE64A SMAJE64CA RM WM 64171.178.61103 3.9SMAJE70A SMAJE70CA RP WP 70177.8861113 3.6SMAJE75A SMAJE75CA RR WR 75183.392.11121 3.3SMAJE78A SMAJE78CA RT WT 78186.795.81126 3.2SMAJE85A SMAJE85CA RV WV 85194.41041137 2.9SMAJE90A SMAJE90CA RX WX 9011001111146 2.8SMAJE100A SMAJE100CA RZ WZ 10011111231162 2.5SMAJE110A SMAJE110CA SE XE 11011221351177 2.3SMAJE120A SMAJE120CA SG XG 12011331471193 2.1SMAJE130A SMAJE130CA SK XK 13011441591209 1.9SMAJE150A SMAJE150CA SM XM 15011671851243 1.7SMAJE160A SMAJE160CA SP XP 16011781971259 1.6SMAJE170A SMAJE170CA SR XR 17011892091275 1.5SMAJE180A SMAJE180CA ST XT 18012012221292 1.4SMAJE200A SMAJE200CA SX XX 20012242471324 1.3SMAJE220A SMAJE220CA ZE YE 22012462721356 1.1SMAJE250A SMAJE250CA ZG YG 250127930914051SMAJE300A SMAJE300CA ZK YK 300133537114860.8SMAJE350A SMAJE350CA ZM YM 350139143215670.7SMAJE400A SMAJE400CA ZP YP 400144749416480.6SMAJE440ASMAJE440CAZRYR440149254317130.6Electrical characteristics (+25 °C)4Technical Data 11213Effective November 2020SMAJE400 W Transient voltage suppressor/electronicsI P P M (% I R S M )t (ms)200 25 50 75 100125 150 175P P P d e r a t i n g i n p e r c e n t a g e (%)100406080T J -Initial junction temperature (°C)V- I curve characteristics (Uni-directional)V- I curve characteristics (Bi-directional)Pulse waveformPulse derating curveSurge waveform: 10/1000 μsV R : Stand-off voltage -- Maximum voltage that can be applied V BR : Breakdown voltageV C : Clamping voltage -- Peak voltage measured across the suppressor at a specified I PP I R : Reverse leakage current I T : Test currentV F : Forward voltage drop for Uni-directional TVS diode0.0010.01 0.11.0 100.11001.010400 W at 10/1000 μs +25 °CP p p (k W )t d -Pulse width (ms)Peak pulse power dissipation vs. pulse widthRatings and V-I characteristic curves (+25 °C unless otherwise noted)EatonElectronics Division 1000 Eaton Boulevard Cleveland, OH 44122United States/electronics© 2020 EatonAll Rights Reserved Printed in USAPublication No. 11213 BU-MC20191November 2020Technical Data 11213Effective November 2020SMAJE400 W Transient voltage suppressor Life Support Policy: Eaton does not authorize the use of any of its products for use in life support devices or systems without the express writtenapproval of an officer of the Company. Life support systems are devices which support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.Eaton reserves the right, without notice, to change design or construction of any products and to discontinue or limit distribution of any products. Eaton also reserves the right to change or update, without notice, any technical information contained in this bulletin.Solder reflow profileT e m p e r a t u r eT LT PEaton is a registered trademark.All other trademarks are property of their respective owners.Follow us on social media to get the latest product and support information.Reference J-STD-020Profile featureStandard SnPb solderLead (Pb) free solderPreheat and soak • Temperature min. (T smin )100 °C 150 °C • Temperature max. (T smax )150 °C 200 °C • Time (T smin to T smax ) (t s )60-120 seconds 60-180 seconds Ramp up rate T L to T p 3 °C/ second max. 3 °C/ second max.Liquidous temperature (T l ) Time (t L ) maintained above T L183 °C60-150 seconds 217 °C60-150 seconds Peak package body temperature (T P )*Table 1Table 2Time (t p )* within 5 °C of the specified classification temperature (T c )20 seconds*40 seconds*Ramp-down rate (T p to T L ) 6 °C/ second max. 6 °C/ second max.Time 25 °C to peak temperature6 minutes max.8 minutes max.* Tolerance for peak profile temperature (T p ) is defined as a supplier minimum and a user maximum.Table 1 - Standard SnPb solder (T c )Package thicknessVolume mm3 <350Volume mm3 ≥350<2.5 mm 235 °C 220 °C ≥2.5 mm220 °C220 °CTable 2 - Lead (Pb) free solder (T c )Package thicknessVolume mm 3 <350Volume mm 3350 - 2000Volume mm 3 >2000<1.6 mm 260 °C 260 °C 260 °C 1.6 – 2.5 mm 260 °C 250 °C 245 °C >2.5 mm250 °C245 °C245 °C。
ASEMI SS24(DO-214AC SMA)肖特基二极管规格书
ASEMI SS24(DO-214AC SMA)肖特基二极管规格书
我想用于充电器，可以吗？尺寸是多少呢？详见下解：
ASEMI品牌的SS24是2A 40V的贴片小二极管，属于肖特基封装，SMA超薄封装，小功率的，常用于家用的小功率电器，也常用于充电器，适配器
正向电流：2A
反向耐压：40V
芯片材质：GPP硅芯片
漏电流：0.5uA
操作温度：-40℃~150℃
正向电压：0.55V-0.95V
浪涌电流：30A
芯片尺寸：50mil
引线数量：2个
恢复时间：5ns
包装方式：5000/盘
这个品牌的打标采用的是镭射激光打标，不褪色，黑胶材质，外形黑体部分用环氧塑脂材料，包封稳定性好，引脚是无氧铜材质，导电性能好
常规包装是2000/盘
尺寸如下：
规格书。
B380A DO-214AC SMA系列规格书推荐
INSTANTANEOUS FORWARD VOLEAGE, VOLTS
2000
TRANSIENT THERMAL IMPEDANCE, C/W
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
0.060(1.52) 0.030(0.76)
0.008(0.203)MAX.
0.208(5.28) 0.188(4.80)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Part Number Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL(see fig.1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 3.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction temperature range Storage temperature range
M7-ASEMI二极管M7
M7-ASEMI⼆极管M7
编辑-Z
M7在SMA封装⾥采⽤的1个芯⽚，其尺⼨都是46MIL，是⼀⼩电流、贴⽚⼆极管。
M7的浪涌电流Ifsm为30A，漏电流(Ir)为5uA，其⼯作时耐温度范围为-55~150摄⽒度。
M7采⽤GPP芯⽚材质，⾥⾯有1颗芯⽚组成。
M7的电性参数是：正向电流(Io)为1A，反向耐压为1000V，正向电压(VF)为1.1V，其中有2条引线。
M7参数描述
型号：M7
封装：SMA
特性：⼩电流、贴⽚
电性参数：1A 1000V
芯⽚材质：GPP
正向电流(Io)：1A
芯⽚个数：1
正向电压(VF)：1.1V
芯⽚尺⼨：46 MIL
浪涌电流Ifsm：30A
漏电流(Ir)：5ua
⼯作温度：-55~+150℃
引线数量：2
M7贴⽚封装系列。
它的本体长度为4.6mm，加引脚长度为5.28mm，宽度为5.4mm，⾼度为4.62mm，脚宽度为1.6mm。
M7⽤于表⾯贴装应⽤，有低反向泄漏、内置应变消除装置，⾮常适合⾃动放置、⾼正向浪涌电流能⼒等特性。
以上就是关于M7-ASEMI⼆极管M7的详细介绍。
强元芯电⼦是⼀家集科研开发、制造、销售为⼀体的国家⾼新技术企业。
12年专注于整流桥、电源IC、及肖特基、快恢复⼆极管、汽车电⼦的研发与⽣产，致⼒于半导体⾏业，专注电源领域。
ASEMI产品⼴泛应⽤于：开关电源、LED照明、集成电路、移动通讯、计算机、⼯业⾃动化控制设备、汽车电⼦以及液晶电视、IoT、智能家居、医疗仪器、电磁炉等⼤⼩家电。
半导体放电管SMA
A.General Description 简要概述半导体放电管器件专门用来防止敏感的电信设备、POS 终端、基站设备、网络视频等设备出现由闪电、电源接触和电源感应引起的过压故障危险。
它们具有高电气浪涌抑制能力，有助于防止瞬间故障和断开状态的高阻抗，使系统的正常运行过程变得实际上更加透明。
广泛应用在：网络通迅及消费类电子产品、高速数据传输设备（T1/E1、XDSL、ISDN、HDSL、CATV、SLIC 等）。
经典应用：电话信号接口防护、RS485、RS232、RS422等数据接口。
产品特点产品特点:: 精确导通电压、快速响应 超强的浪涌处理能力 双向对称,可靠性高 安装简便，器件体积小分SMA、SMB 贴片型/DO-15、TO-92直插型 符合ROHS 要求满足通信产品标准要求SMA/DO-214ACB.Dimension产品尺寸D.Surge Ratings 浪涌额定值E.Product Terminology 产品术语Electrical Parameters电气参数V DM :Repetitive peak Off-state Voltage 最高峰值电压，器件可保持关断状态，也即：不正作峰值电压VBo:Switching Voltage半导体雪崩或开关切换动作电压Ipp ：Surge Ratings最大额定峰值脉冲电流I DM ：Off-state current在V DM 下最大泄漏电流值I H Min ：Minimum Holding current 导通状态最小电流C ：O ff-state Capacitance 不工作状态下器件电容值di/dt ：Rate of Rise of Current 电流上升率dv/dt ：Rate of Rise of Voltage电压上升率F.Thermal Considerations温度特性考虑封装形式Symbol符号Parameter参数Value值SMA/Do-214ACT J Operating Junction Temperature Range工作温度范围-40~+150℃T S Storage Temperature Range贮存温度范围-55~+150℃RØJA Thermal Resistance:Junction to Ambient90℃/WG.Part Name Information 产品命名信息H.Packing information 包装信息505000PCS/Reel 00PCS/Reel1010000PCS 000PCS /BOX50,000PCS /CartonNOTE:ALL DATA AND SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE.注意注意：：所有的规格、参数更新将不例行通知。
放电管规格
4500V(3600~5400)100M ohm min @DC1000V 2PF max
DSA series DSA-622MA-05
D6*L21
6200V(4960~7440)100M ohm min @DC1000V 2PF max
DSA series DSA-752MA-05
D6*L21
7500V(6000~9000)100M ohm min @DC1000V 2PF max
FA55 series FA55-402-G04F-M D5.5*L7
4000V(3200~4800)100M ohm min @DC500V 1PF max
FA55 series FA55-402-H06-M D5.5*L7
4000V(3200~4800)100M ohm min @DC500V 1PF max
FA55 series FA55-302-G04F-M D5.5*L7
3000V(2400~3600)100M ohm min @DC500V 1PF max
FA55 series FA55-302-H06-M D5.5*L7
3000V(2400~3600)100M ohm min @DC500V 1PF max
D6*L21
3600V(2880~4320)100M ohm min @DC500V 2PF max
DSA series DSA-402MA-05
D6*L21
4000V(3200~4800)100M ohm min @DC500V 2PF max
DSA series DSA-452MA-05
D6*L21
DSA series DSA-102MA
D6*L21
士兰微 SGT40N60NPFDPN 说明书 40A、600V绝缘栅双极型晶体管 说明书
40A 、600V 绝缘栅双极型晶体管描述SGT40N60NPFDPN 绝缘栅双极型晶体管采用新一代场截止（Field Stop ）工艺制作，具有低的导通损耗和开关损耗，正温度系数易于并联应用等特点。
该产品可应用于感应加热UPS ，SMPS 以及PFC 等领域。
特点♦ 40A ，600V ，V CE(sat)(典型值)=1.8V@I C =40A ♦ 低导通损耗 ♦ 超快开关速度 ♦高击穿电压命名规则SGT 40 N E 60 □□□□ PNIGBT 产品系列名称电流值,20表示20AN ChannelE:表示有带ESD空白:表示不带ESD电压值:120表示1200VNP:表示NPT 工艺 P: 表示PT 工艺T: 表示Trench 工艺空白: 表示非Trench 工艺 F: 表示采用了Field stop 工艺空白: 表示非采用Field stop 工艺 D: 表示内置了FRD 空白: 表示没有内置了FRD表示封装形式,如PN 表示TO-3P 封装形式产品规格分类产 品 名 称 封装形式 打印名称 材料 包装 SGT40N60NPFDPNTO-3P40N60NPFD无铅料管极限参数 (除非特殊说明，T C =25°C)参 数符 号 参数范围 单位 集电极-射极电压 V CE 600 V 栅极-射极电压V GE±20 V 集电极电流 T C =25°CI C 80 A T C =100°C40 集电极脉冲电流 I CM 120 A 耗散功率（T C =25°C ） - 大于25°C 每摄氏度减少 P D 290 W 2.32 W/°C 工作结温范围 T J -55～+150 °C 贮存温度范围 T stg -55～+150°C热阻特性参数符号参数范围单位芯片对管壳热阻（IGBT）RθJC0.24 °C/W 芯片对管壳热阻（FRD）RθJC 1.4 °C/W 芯片对环境的热阻RθJA35.5 °C/WIGBT电性参数(除非特殊说明，TC=25°C)参 数 符 号 测试条件 最小值 典型值 最大值 单位 集射击穿电压BV CE V GE=0V,I C=250uA 600 -- -- V 集射漏电流I CES V CE=600V,V GE=0V -- -- 200 uA 栅射漏电流I GES V GE=20V,V CE=0V -- -- ±500 nA 栅极开启电压V GE(th)I C=250μA,V CE=V GE 4.0 5.0 6.5 V 饱和压降V CE(sat)I C=40A,V GE=15V -- 1.8 2.7 VI C=40A, V GE=15V, T C=125°C -- 2.1 -- V输入电容C ies VCE=30VV GE=0Vf=1MHz -- 1850 --pF输出电容C oes-- 180 -- 反向传输电容C res-- 50 --开启延迟时间T d(on)V CE=400VI C=40AR g=10ΩV GE=15V感性负载-- 18 --ns开启上升时间T r-- 80 --关断延迟时间T d(off)-- 110 --关断下降时间T f-- 105 --导通损耗E on-- 1.87 --mJ 关断损耗E off-- 0.68 --开关损耗E st-- 2.55 --栅电荷Q gV CE = 300V, I C=20A,V GE = 15V -- 100 --nC发射极栅电荷Q ge-- 11 --集电极栅电荷Q gc-- 52 --FRD电性参数(除非特殊说明，T C=25°C)参 数 符 号 测试条件 最小值 典型值 最大值 单位二极管正向压降V fm I F = 20A T C=25°C -- 1.9 2.6V I F = 20A T C=125°C -- 1.5 --二极管反向恢复时间T rr I ES =20A, dI ES/dt = 200A/μs-- 32 -- ns 二极管反向恢复电荷Q rr I ES =20A, dI ES/dt = 200A/μs-- 74 -- nC典型特性曲线图1. 典型输出特性集电极电流 – I C (A )0401201.53.06.0集电极-发射极电压 – V CE (V)集电极电流 – I C (A )集电极-发射极电压 – V CE (V)图3. 典型饱和电压特性802060100 4.5图2. 典型输出特性集电极电流 – I C (A )401200 1.5 3.0 6.0集电极-发射极电压 – V CE (V)8020601004.5040120012580206010043集电极电流 – I C (A )栅极-发射极电压 – V GE (V)图4. 传输特性40120456128020601001089711图5. 饱和电压vs. V GE集电极-发射极电压 – V C E (V )0420481220栅极-发射极电压 – V GE (V)1281616图6. 饱和电压vs. V GE集电极-发射极电压 – V C E (V )0420481220栅极-发射极电压 – V GE (V)1281616典型特性曲线（续）图7. 电容特性电容(p F )0200050000.11.010.030.0集电极-发射极电压 – V CE (V)开关时间 [n s ]栅极电阻 - R G (Ω)图9. 开启特性 vs. 栅极电阻300010004000102001020501004030图8. 栅极电荷特性栅极-发射极电压 - V G E (V )06153060120栅极电荷量 – Q G (nC)931290开关时间 [n s ]栅极电阻 - R G (Ω)图10. 关闭特性 vs. 栅极电阻10550010205010004030开关损耗 [m J ]栅极电阻 - R G (Ω)图11. 开关损耗 vs. 栅极电阻0.310.01020504030正向电流 - I F (A )正向电压 - V F (V)图12. 正向特性0.280.01410.0321.0典型特性曲线（续）图14. IGBT 瞬态热阻抗峰值功率阻抗 (°C /W )00.10.2510-510-410-310-1脉冲持续时间(S)0.150.050.210-210-110101100101102103102集电极电流 - I C (A )图13. SOA 特性集电极-射极电压 - V CE(V)封装外形图声明：♦士兰保留说明书的更改权，恕不另行通知！客户在下单前应获取最新版本资料，并验证相关信息是否完整和最新。
君耀电子半导体放电管产品选型指南说明书
TSS 半导体放电管产品选型指南T hyristor S urge S uppressors Selection Guide版权及最终解释权归君耀电子（BrightKing）所有V2，2018目录1TSS工作原理 (3)2TSS特点 (3)3TSS典型应用电路 (4)4TSS参数说明 (4)4.1.V DRM，I DRM (4)4.2.I H (5)4.3.V T，I T (6)4.4.V S，I S (6)4.5.V PP，I PP (6)5TSS选型注意事项 (7)5.1.反向截止电压（V DRM） (7)5.2.TSS的续流问题 (7)5.3.封装形式 (7)6TSS命名规则 (7)7君耀电子（BrightKing）TSS产品线 (8)1 TSS 工作原理TSS （Thyristor Surge Suppressors ），浪涌抑制晶闸管，也称半导体放电管，是采用半导体工艺制成的PNPN 结四层结构器件，其伏安特性（如图1）类似于晶闸管，具有典型的开关特性。
TSS 一般并联在电路中应用，正常工作状态下TSS 处于截止状态，当电路中由于感应雷、操作过电压等出现异常过电压时，TSS 快速导通泄放由异常过电压导致的异常过电流，保护后端设备免遭异常过电压的损坏，异常过电压消失后，TSS 又恢复至截止状态。
图2是TSS 第一象限放大图，TSS 的开关特性包含四个区域：断态区、击穿区、负电阻区和通态区。
断态区：是电压—电流特性的高电阻、低电流区。
该区域从原点延伸至击穿起始点。
断态电流是结反向电流和所有表面漏电流的综合，在该区可施加反向截止电压（V DRM ）测量TSS 的漏电流（I DRM ）。
击穿区：击穿区是电压—电流特性的低电阻、高电压区域。
该区域是从电压—电流特性的高动态电阻的低电流部分开始变化，至显著的低动态电阻区、电流剧增的区域。
最终当TSS 正反馈出现足以激活开通时，该区域终止。
负电阻区：负电阻区表示从击穿区开关点到通态状态的轨迹。
SS26(DO-214AC SMA)肖特基二极管规格书
2.0 1.5 60 1.0 40
Fig.2-Maximum Non-repetitive Surge Current
80 At rated TL 8.3ms single half sine-wave
0.5 SS22-SS24 SS25&SS26 0.0 25 50 75 100 125 150 175
inch ( mm )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ℃ ambient temperature unless otherwise specified. Single phase. half wave. 60HZ. resistive or inductive load. For capacitive load. derate current by 20％ SYMBOL Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current 9.5mm Lead Length. TA = 75℃ Peak Forward Surge Current 8.3ms Single half-sine-wave superimposed on rated load Maximum Forward Voltage at 1.5A DC Maximum Reverse Current Tj = 25℃ at Rated DC Blocking Voltage Tj = 100℃ Typical Junction Capacitance ( Note 1 ) Typical Thermal Resistance ( Note 2 ) Operating Junction Temperature Range Storage Temperature Range NOTE: VF IR Cj RQJA Tj TSTG 0.50 0.5 15.0 150 20 55 to 125 55 to 150 0.70 0.85 V mA pF ℃/W ℃ ℃ IFSM 50.0 A VRRM VRMS VDC I(AV) SS22 20 14 20 SS23 30 21 30 SS24 40 28 40 SS25 50 35 50 2.0 SS26 60 42 60 SS28 80 56 80 SS210 100 70 100
半导体器件芯片常用型号参数12页word文档
半导体器件常用型号参数一、半导体二极管参数符号及其意义CT---势垒电容Cj---结（极间）电容，表示在二极管两端加规定偏压下，锗检波二极管的总电容Cjv---偏压结电容Co---零偏压电容Cjo---零偏压结电容Cjo/Cjn---结电容变化Cs---管壳电容或封装电容Ct---总电容CTV---电压温度系数。
在测试电流下，稳定电压的相对变化与环境温度的绝对变化之比CTC---电容温度系数Cvn---标称电容IF---正向直流电流（正向测试电流）。
锗检波二极管在规定的正向电压VF下，通过极间的电流；硅整流管、硅堆在规定的使用条件下，在正弦半波中允许连续通过的最大工作电流（平均值），硅开关二极管在额定功率下允许通过的最大正向直流电流；测稳压二极管正向电参数时给定的电流IF（AV）---正向平均电流IFM（IM）---正向峰值电流（正向最大电流）。
在额定功率下，允许通过二极管的最大正向脉冲电流。
发光二极管极限电流。
IH---恒定电流、维持电流。
Ii--- 发光二极管起辉电流IFRM---正向重复峰值电流IFSM---正向不重复峰值电流（浪涌电流）Io---整流电流。
在特定线路中规定频率和规定电压条件下所通过的工作电流IF(ov)---正向过载电流IL---光电流或稳流二极管极限电流ID---暗电流IB2---单结晶体管中的基极调制电流IEM---发射极峰值电流IEB10---双基极单结晶体管中发射极与第一基极间反向电流IEB20---双基极单结晶体管中发射极向电流ICM---最大输出平均电流IFMP---正向脉冲电流IP---峰点电流IV---谷点电流IGT---晶闸管控制极触发电流IGD---晶闸管控制极不触发电流IGFM---控制极正向峰值电流IR（AV）---反向平均电流IR（In）---反向直流电流（反向漏电流）。
在测反向特性时，给定的反向电流；硅堆在正弦半波电阻性负载电路中，加反向电压规定值时，所通过的电流；硅开关二极管两端加反向工作电压VR时所通过的电流；稳压二极管在反向电压下，产生的漏电流；整流管在正弦半波最高反向工作电压下的漏电流。
培训资料-半导体放电管
냫떼쳥럅뗧맜엠통닄쇏一半导体放电管的应用概述半导体放电管是一种微型化、高频化和高可靠性的特殊新型电力电子半导体器件，它的结构是一种五层双端对称双向晶闸管，导通与关断只由外加电压或dv/dt决定，因此在线路的在线保护方面有着优越的性能而广泛地应用于通信电路系统中作为雷电浪涌保护器。
目前，完全由它代替气体放电管，用来保护程控交换机、电话机等免遭雷电和交流电源线感应的强脉冲干扰，是理想的换代产品。
半导体放电管的基本特性是：外加电压低于其不动作电压时，管子的漏电流极小，相当于断路；当外电压继续加大时，开始发生击穿（类似与二级管）；外电压进一步加大后，管子两端变成通态，相当于短路，可泄放大的电流；当外电压撤去以后，管子可恢复断态，能重复使用且双向结构及电参数一致，可以泄放双向的过电压。
对称的伏安特性曲线如图一：图一半导体放电管的电路符号如图2：半导体吸收雷电浪涌示意如图3：图 2图 6对于低于200伏左右（振铃电路可能产生一百五六十伏的电压，在此正常工作电压下放电管应不动作）的电压，固体放电管不动作（对应参数：不动作电压），相当于断路（对应参数：绝缘电阻）外界引入的过电压经一级保护后，到达B点时最高只有两三百伏（对应固体放电管的最高限制电压），此电压经过二级保护区后到达D点后只有五六十伏，不会对用户接口卡造成损坏。
二级保护可以由低压放电管（标称58伏）构成，也可以由专用的二级保护电路来实现。
主要用于电话机中的线线保护，防雷电感应的高压脉冲对电信终端的损害。
图7为二极管DO－15轴式封装的固体放电管示意图图8为外形图图8 图7二半导体放电管芯片的结构及原理半导体放电管的芯片结构如图8、平面图形如图9图8 图9 (表面金属EB短路)从结构可以分解如图10从上图可以看出，五层双端结构的半导体放电管芯片可以看作是两个无门极的晶闸管的组合，而每个晶闸管又可以看作是两个互相作用的三级管的组合。
在此,简要介绍一下晶闸管的导通条件如图10中的电路图所示：档门极施加触发电流IG时，经晶体管V2放大为电流IC2，又可将IC2视为V1管的基极电流，经V1管放大为电流IC1。
伯恩半导体 SMA封装 P1300TA 规格书
Features◆ Bi-directional crowbar transient voltage protection ◆ High surge capability ◆ High off-state impedance ◆ Low leakage current ◆ Low on-state voltage ◆ Short-circuit failure modeMain ApplicationBORN’s thyristor surge protector devices are desi gned to help protect sensitive telecommunication equipment from the hazards caused by lighning ,power contact,and power induction. These devices enable equipment to comply with various regulatory requirements including GR 1089,ITU K.20,K.21and K.45,IEC 60950,UL 60950,and TIA-968-A(formerly known as FCC Part 68).Typical application including:● Central office switching equipment. Analog and digital linecards(xDSL,T1/E1,ISDN……)● Customer Premises Equipment(CPE)such as phones, fax machines,modems,POSterminals, PBX systems and caller ID adjunct boxes. ● Primary protection modules including Main Distribution Frames(M DF),building entrance equipment and station protection modules.● Access network equipment such as remoteterminals,line repeaters,multiplexers,cross-connects,WAN equipment,Network Int erface Devices(NID).● Data lines and security systems.● CATV line amplifiers and power inserters. ● Sprinkler systems.Electrcal Parameters (Tamb=25℃)Part NumberV DRMI DRMV BOI BOV TI TC O`I H Min.Max.Max.Max.Max.Max.Max.Min.VuAVmAVApFmABEP 1500TA120516080042.240150Eletrical CharacteristicsV DRMS t a nd -o ff v o l tag e,is m ea sur ed a t ID RM I HHolding current.V BOB r e a ko v e r v o l tag e,is m ea sur ed a t 100V/μs.I BOBreadover current.C O Off-state capacitance ismeasured in V DC=2V@1M HZ. I T ON-state currentI DRM Leakage current,is measured at VDRM. V T On-state voltage. Part Numbering SystemBEP1300T A(A) (B) (C) (D)(A) BORN’s Semiconductor SurgeArrester (B)Series:0080,0300…3500,3800,4200etc.(C) Pake:SMA(DO-214AC)(D) Rating SureV oltage:A:3KV(10/700μs)Electrical Characteristics CurvesFigure1 V-I Characteristics Figure2 tr x td Pulse Wave-formJunction TemperatureBEP 1300TAThermal ConsiderationsPackage DO-214AA/SMBSymbolParameterValueUnitT J Operating Junction Temperature -40 to +150℃T S Storage Temperature Range -40 to +150℃R θJAJunction to Ambient on printed circuit90℃/WSolder Reflow Recommendations●Recommended reflow methods: IR, vapor phase oven, hot air oven, wave solder. ●The device can be exposed to a maximumtemperature of 265°C for 10 seconds. ●Devices can be cleaned using standard industry methods and solvents.Notes: If reflow temperatures exceed therecommended profile, devices may not meet the performance requirements.Product DimensionsRef.（mm ）Min. Max. A 1.250 1.650 B3.9904.500 C 2.540 2.790 D 1.980 2.290 E 0.780 1.520 F 4.9305.280 G0.1520.305BEP 1300TAD。
SA2M整流二极管规格书
Surface Mount Glass Passivated RectifierSA2B thru SA2MFEATURES•Low profile package•Ideal for automated placement •Glass passivated chip junction •Low forward voltage drop •Low leakage current•High forward surge capability•Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C•Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/ECTYPICAL APPLICATIONSFor use in general purpose rectification of power supplies,inverters, converters and freewheeling diodes for consumerand telecommunication.MECHANICAL DATACase: DO-214AC (SMA)Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable perJ-STD-002 and JESD 22-B102E3 suffix meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode endNotes(1)Pulse test: 300 μs pulse width, 1 % duty cycle(2)Pulse test: Pulse width ≤ 40 msPRIMARY CHARACTERISTICSI F(AV) 2.0 A V RRM 100 V to 1000 VI FSM55 AI R 3.0 μA V F at I F = 2.0 A0.854 V T J max.150 °CDO-214AC (S MA)MAXIMUM RATINGS (T A = 25°C unless otherwise noted)PARAMETERSYMBOL SA2B SA2D SA2G SA2J SA2K SA2M UNIT Maximum repetitive peak reverse voltage V RRM 1002004006008001000V Average forward currentI F(AV) 2.0A Peak forward surge current 10 ms single halfsine-wave superimposed on rated loadI FSM 55A Operating junction and storage temperature rangeT J , T STG- 55 to + 150°CELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAMETERTEST CONDITIONS SYMBOL TYP.MAX.UNITInstantaneous forward voltageI F = 1.0 AT J = 25 °CV F (1)0.911-VI F = 2.0 A 0.954 1.1I F = 1.0 A T J = 125 °C 0.805-I F = 2.0 A0.8540.95Reverse currentRated V RT J = 25 °C I R (2)0.193μA T J = 125 °C2890Typical reverse recovery time I F = 0.5 A, I R = 1.0 A,I rr = 0.25 A t rr 1.5-μs Typical junction capacitance4.0 V, 1 MHzC J11-pFSA2B thru SA2MNote(1)Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.79" x 0.79" (20 mm x 20 mm) copper pad areas RATINGS AND CHARACTERISTICS CURVES(T A = 25 °C unless otherwise noted)Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 4 - Typical Instantaneous Forward CharacteristicsTHERMAL CHARACTERISTICS (T A = 25°C unless otherwise noted)PARAMETER SYMBOL SA2B SA2D SA2G SA2J SA2K SA2M UNITTypical thermal resistance RθJA(1)80°C/W RθJL(1)12ORDERING INFORMATION (Example)PREFERRED P/N UNIT WEIGHT (g)PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODESA2J-E3/61T0.06461T18007" diameter plastic tape and reel SA2J-E3/5AT0.0645AT750013" diameter plastic tape and reelSA2B thru SA2MFig. 5 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Junction Capacitance Fig. 7 - Typical Transient Thermal Impedance。
P0080TA半导体放电管
固体放电管（半导体放电管）是基于可控硅的原理和结构的一种二端负阻器件，用于保护敏感易损的集成电路，使之免遭雷电和突波的冲击而造成的损坏。
它采用了先进的离子注入技术，具有精确导通、快速响应、浪涌吸收组能力强、可靠性高等特点;广泛应用于通讯交换设备中的程控交换机、电话机、传真机、配线架、XDSL、通讯接口、通讯发射设备等一切需要防雷保护的领域，以保护其内部的IC免受瞬间过电压的冲击和破坏。
在当今世界微电子及通讯设备高速发展的今天，固态放电管已成为世界通讯设备的首选器件。
SEMIWILL半导体放电管P0080TA(SMA封装)：1）产品优点：浪涌吸收能力强（10/700uS:2KV）⌝精确导通、快速响应耐压高，漏电流低⌝可靠性高标准SMA封装符合RoHS环保要求包装方式：卷盘包装4000PCS/盘12000PCS/箱2）应用领域：1、安防领域室内监控系统的雷击防护2、xDSL、Cable Modem、以太网等的雷击防护3、其他领域的雷击防护3）PXXXXTA全系列产品：P0080TA、P0300TA、P0640TA、P1300TA、P1800TA、P2600TA、P3100TA、P3500 TA、P4200TA等作为全球领先的专业半导体分立器件生产厂家，望爵半导体科技（SEMIWILL SEMICONDUCT OR INC.）为您提供最优质的元器件产品，包括半导体放电管（Thyristor Surge Suppressors）、陶瓷气体放电管(Gas Discharge Tubes)、瞬态抑制二极管(Transient Voltage Suppressors)、静电保护器（EletroStatic Protection Devices）和可控硅产品（Thyristor）等，同时我们为您提供最新的行业解决方案以及免费的测试验证服务等。
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PXXXXAA SERIES
Over-voltage Protection Thyristor
HIGHFAR PxxxxAA Series Do-214AC are designed to protect baseband equipment such as modems,line cards,CPE and DSL from damaging overvoltage transients.
The series provides a surface mount solution that enables equipment to comply with global regulatory standards.Features
* Low voltage overshoot * Low on-state voltage
* Does net degrade with use
* Fails short citcuit when surged in excess of ratings * Low Capacitance
Dot Applicable Electrical Parameters
Peak Off-state Voltage - maximum voltage that can be applied while
Revosion:17-Oct-11 1/4
C O V PP I PP
Parameter I DRM I S I T I H V S V T Definition
Switching Voltage - maximum voltage prior to switching to on state On-state Voltage - maximum voltage measured at rated on-state current Leakage Current - maximum peak off-state current measured at V DRM V DRM maintaining off state
Switching Current - maximum current required to switch to on state On-state Current - maximun rated continuous on-state current Holding Current - minimum current required to maintain on state Off-state Capacitance - typical capactiance measured in off state Peak Pulse Voltage - maximum rated peak impulse voltage Peak Pulse Current - maximum rated peak impulse current
PXXXXAA SERIES Electrical Characteristics
Part Number V DRM (V)
V S
(V)
V T
(V)
I DRM (uA)
I S
(mA)
I T
(A)
I H
(mA)
C O
(PF)
V PP
10/700uS(
V)
I PP
10/1000uS
(A)
P0080AA62545800 2.25070400080 P0300AA254045800 2.25070400080 P0640AA587745800 2.215060400080 P0720AA658845800 2.215060400080 P0900AA759845800 2.215055400080 P1100AA9013045800 2.215055400080 P1300AA12016045800 2.215055400080 P1500AA14018045800 2.215060400080 P1800AA17022045800 2.215060400080 P2300AA19026045800 2.215055400080 P2600AA22030045800 2.215050400080 P3100AA27535045800 2.215045400080 P3500AA32040045800 2.215040400080 Notes:
* All measurements are made at an ambient temperature of 25℃.Ipp applies to-40℃ through +85℃ temperature range.
* Off-state capacitance(CO)is measured at 1 MHz with a 2V bias and is typical value.
Thermal considerations
Value Unit
-40 to +150℃
-40 to +150℃
90℃/W Revision:17-Oct-11 2/4 Package DO-214AC/SMA Symbol Parameter
T J
T S
R
Operating Junction Temperature
Storage Temperature Range
Junction to Ambient on printed circuit
Characteristics Curve
Figure 1. V-I Characteristics
Figure 2. tr X td Pulse Wave - form
Temperature Case Temperature
Physical Spectifications
Lead Material Terminal Finish
Body Material
Revision:17-Oct-11 3/4
Copper Alloy 100% Matte-Tin Plated UL recognized epoxy meeting flammability classification 94v-0
Dimensions
Tape and Reel Specification - DO-214AC
Revision:17-Oct-11 4/4
-
L
2.100
-
0.082
-K - 2.300-0.090J 2.100-0.0820.2080.0120.1100.0900.0600.0085.2800.3050.0490.1570.1000.0780.030-0.1940.0062.7902.2901.5200.203G H 1.2503.9902.5401.9800.780-4.9300.152C D E F Inches
Millimeters A B 1.6504.5000.0650.177Max.Min.Max.-I 1.800-0.070Item Min.。