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亿光光耦ELM452

Revision :3 © 1 Copyright LifecyclePhase:
Date:2013-07-15 2010, Everlight All Rights Reserved. Release Date : May 13, 2013. Issue Release No: DPC-0000113 Rev.3 Expired Period: Forever
Revision :3 5 Copyright © LifecyclePhase:
2010, Everlight All Rights Reserved. Release Date : May 13, 2013. Issue No:DPC-0000113 Rev.3
Release Date:2013-07-15 14:59:03.0 Expired Period: Forever
Pin Configuration 1. Anode 3. Cathode 4. Gnd 5. Vout 6. VCC
Description
The ELM452 and ELM453 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transistor.The devices are packaged in industry standard 5pin SOP packages and are suitable for surface mounting.

夏普光耦选型手册

4脚 DIP
PC815XNNSZ0F*5, *6 复合光晶 PC81510NSZ0X 体管 5, 6 输 PC852XNNSZ0F* * 出 PC853XNNSZ0F*5, *6
*1 *2 *3 *4 *5 *6 *7 *8 *9
–
–
50
5.0
35
600
1
60
100
⅜ ⅜ ⅜
– ⅜ ⅜
–
10
页码 40 40 40 40 40 40 41 41 41 41 41 41 41 42 42 42 42 42 42 43 43
<OPIC 输出型>
封装类型输出类型特点型号（系列） PC400J00000F／PC456L0NIP0F／ PC410S0NIP0F ／PC410L0NIP0F ／ PC4D10SNIP0F PC457S0NIP0F ／PC457L0NIP0F 页码
PC714V0NSZXF PC724V0NSZXF
高绝缘电压高绝缘电压，大输入电流高绝缘电压，带基底端子高绝缘电压，高灵敏度高绝缘电压，高灵敏度, 高集电极发射极电压，大功率
PC3HU7xYIP0B
PC3H2J00000F （小扁平型4脚）
注意：未经元器件规格说明书确认，便在设备中使用产品目录、数据手册等所刊载的任何夏普元器件，由此引起的故障或损害，夏普公司将不负任何责任。除非特别说明，本页所列的型号均符合 RoHS （有害物质限制）标准* 。详情请与夏普公司联系。 *RoHS （有害物质限制）标准：禁止使用铅、镉、六价铬、汞和特定溴系阻燃剂（PBB 和 PBDE），除特别情况外。因此，在使用任何夏普元器件之前，务请与夏普公司联系以获取最新的元器件规格说明书。

光耦datasheet

Figure 3. Switching times
Rev. A3, 11–Jan–99
129
CNY65Exi
Vishay Telefunken Typical Characteristics (Tamb = 25_C, unless otherwise specified)
200 P tot – Total Power Dissipation ( mW ) 160 120 Coupled Device 80 40 0 0
96 11698
+
tp = 50 ms
t
50 W
95 10900
100 W
Channel II
Figure 1. Test circuit, non-saturated operation
10% 0 0 IF RG = 50 W tp 0.01 T tp = 50 ms IF = 10 mA +5V IC td ton tp tion td tr ton (= td + tr) pulse duradelay time rise time turn-on time tr ts toff ts tf toff (= ts + tf) tf
Output (Detector)
Parameter Collector emitter voltage Emitter collector voltage Collector dark current Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, If = 0, E = 0 Symbol VCEO VECO ICEO Min. 32 7 Typ. Max. Unit V V nA

亿光光耦EL3023

6PIN DIP RANDOM-PHASE TRIAC DRIVER PHOTOCOUPLER EL301X, EL302X, EL305X SeriesFeatures:• Peak breakdown voltage -250V: EL301X -400V: EL302X -600V: EL305X• High isolation voltage between input and output (Viso=5000 V rms )• Compact dual-in-line package • Pb free and RoHS compliant.•UL and cUL approved(No. E214129)• VDE approved (No.132249)• SEMKO approved • NEMKO approved • DEMKO approved •FIMKO approvedDescriptionThe EL301X, EL302X and EL305X series of devices each consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon random phase photo Triac.They are designed for interfacing between electronic controls and power triacs to control resistive and inductive loads for 115 to 240 VAC operations.Applications●Solenoid/valve controls ●Lamp ballasts●Static AC power switch●Interfacing microprocessors to 115 to 240Vac peripherals ●Incandescent lamp dimmers ●Temperature controls ●Motor controlsSchematic126543Pin Configuration 1. Anode 2. Cathode3. No Connection4. Terminal5. Substrate(do not connect)6. Terminal亿光一级代理商超毅电子Absolute Maximum Ratings (Ta=25 )Parameter Symbol Rating Unit Input Forward current I F60mA Reverse voltage V R6VPower dissipationDerating factor (above T a = 85 C)P D100mW3.8mW/°COutputOff-state OutputTerminal Voltage EL301XV DRM250V EL302X400EL305X600Peak Repetitive Surge Current(pw=100μs,120pps)I TSM1A On-State RMS Current I T(RMS)100mAPower dissipationDerating factor (above T a = 85 C)P C300mW7.4mW/Total power dissipation P TOT330mW Isolation voltage*1V ISO5000Vrms Operating temperature T OPR-55 to 100 Storage temperature T STG-55 to 125 Soldering Temperature*2T SOL260 Notes:*1AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2&3are shorted together, and pins4, 5 & 6are shorted together. *2 For 10 secondsElectro-Optical Characteristics (Ta=25 unless specified otherwise)InputParameter Symbol Min.Typ.*Max.Unit Condition Forward Voltage V F- 1.18 1.5V I F=10mA Reverse Leakage current I R--10µA V R=6V OutputParameter Symbol Min.Typ.*Max.Unit ConditionPeak Blocking Current I DRM--100nA V DRM = Rated V DRM I F=0mAPeak On-state Voltage V TM-- 2.5V I TM=100mA peak, I F=Rated I FTCritical Rate of Rise off-state Voltage EL301XEL302X dv/dt-100-V/µsV PEAK=Rated V DRM,I F=0 (Fig. 8)EL305X1000--V PEAK=400V,I F=0 (Fig. 8)Transfer CharacteristicsParameter Symbol Min.Typ.*Max.Unit ConditionLED Trigger Current EL3020I FT30mA Main terminal Voltage=3V EL3010EL3021EL3051--15EL3011EL3022EL3052--10EL3012EL3023EL3053--5Holding Current I H-250-µA * Typical values at T a= 25°CTypical Electro-Optical Characteristics CurvesFigure 8. Static dv/dt Test Circuit & WaveformMeasurement MethodThe high voltage pulse is set to the required V PEAK value and applied to the D.U.T. output side through the RC circuit above. LED current is not applied. The waveform V T is monitored using a x100 scope probe. By varying R TEST , the dv/dt (slope) is increased, until the D.U.T. is observed to trigger (waveform collapses). The dv/dt is then decreased until the D.U.T. stops triggering. At this point, τRC is recorded and the dv/dt calculated.For example, V PEAK = 400V for EL302X series. The dv/dt value is calculated as follows:V PEAKApplied V T WaveformτRC0.632 x V PEAK50 Ω10 k ΩD.U.T.R TESTHigh Voltage Pulse SourceC TESTV T A KT1T20.63 x 400τRCdv/dt = = 252τRC0.632 x V PEAK τRCdv/dt =Order InformationPart NumberEL301XY(Z)-Vor EL302XY(Z)-Vor EL305XY(Z)-VNoteX = Part No. for EL301x (0, 1 or 2)X = Part No. for EL302x, EL305x (1, 2 or 3)Y = Lead form option (S, S1, M or none)Z = Tape and reel option (TA, TB or none).V = VDE safety approved (optional)Option Description Packing quantity None Standard DIP-665 units per tube M Wide lead bend (0.4 inch spacing)65 units per tube S Surface mount lead form65 units per tube S(TA)Surface mount lead form + TA tape & reel option1000 units per reel S (TB)Surface mount lead form + TB tape & reel option1000 units per reel S1 (TA)Surface mount lead form (low profile) + TA tape & reel option1000 units per reel S1 (TB)Surface mount lead form (low profile) + TB tape & reel option1000 units per reelPackage Dimension(Dimensions in mm) Standard DIP TypeOption M TypeOption S TypeOption S1 TypeRecommended pad layout for surface mount leadformDevice MarkingNotesEL denotes EVERLIGHT3053 denotes Device NumberY denotes 1 digit Year codeWW denotes 2 digit Week codeVdenotes VDE (optional)EL3053YWWVTape dimensionsDimension No.A B Do D1E F Dimension (mm)10.4±0.17.5±0.1 1.5±0.1 1.5+0.1/-01.75±0.17.5±0.1Dimension No.Po P1P2t W K Dimension (mm)4.0±0.1512±0.12.0±0.10.35±0.0316.0±0.24.5±0.1Revision : 7Release Date:2014-09-24 17:43:02.011Copyright © 2010, Everlight All Rights Reserved.Release Date:September 3, 2014. Issue No:DPC-0000059 Rev.7Precautions for Use1. Soldering Condition1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow ProfileNote: Reference: IPC/JEDEC J-STD-020DPreheatTemperature min (T smin ) 150 °C Temperature max (T smax )200°CTime (T smin to T smax ) (t s )60-120 seconds Average ramp-up rate (T smax to T p ) 3 °C/second maxOtherLiquidus Temperature (T L )217 °C Time above Liquidus Temperature (t L )60-100 sec Peak Temperature (T P )260°C Time within 5 °C of Actual Peak Temperature: T P -5°C 30 sRamp-Down Rate from Peak Temperature 6°C /second max.Time 25°C to peak temperature 8 minutes max.Reflow times 3 times .Revision : 7Release Date:2014-09-24 17:43:02.012 2010, Everlight All Rights Reserved.Release Date:September 3, 2014. Issue No:DPC-0000059 Rev.70 DISCLAIMER1.Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for abovespecification.2.When using this product, please observe the absolute maximum ratings and the instructions for using outlined in thesespecification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets.3.These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’treproduce or cause anyone to reproduce them without EVERLIGHT’s consent.。

亿光反射式光电开关的应用与特性

亿光反射式光电开关的应用与特性
文章出处：广州市超毅电子有限公司
亿光反射式光电开关也属于红外线不可见光产品，是一种小型光电元器件，它可以检测出其接收到的光强的变化。

在前期反射式光电开关是用来检测物体有无感应到的,它是由一个红外线发射管跟一个红外线接收管组合而成，它的发射波长是780nm-1mm，发射器带一个校准镜头，将光聚焦射向接收器，接收器出电缆将这套装置接到一个真空管放大器上。

检测对象是当它进入间隙的槽型开关和块光路之间的发射器和检测器,当
物体接近到灭弧室，接收器的一部分收集的光线从对象反射到光电元件上面。

它是利用物体对红外线光束遮光或反射，由同步回路选通而检测物体的有无的，其物体不限于金属，对所有能反射光线的物体均可检测。

亿光反射式光电开关是包括一个红外发光二极管和硅光电晶体管，包裹并排在聚光光学轴在一个黑色的热塑性塑料外壳。

光电晶体管不受辐射的红外发光二极管在正常情况下，当一个物体靠近时，辐射是由物体反射和光电接收更为接近的物体辐射。

亿光反射式光电开关检测方法都反应比较快、高解析、精度度高、峰值波长λ=模式、灵敏度高易散热、无铅、使用寿命比较长、符合RoHS标准，是新一代的绿色环保能源，而且可测参数多，它的结构也比较简单，形式灵活多样。

反射式光电开关应用非常的广泛主要应用于鼠标、打印机复印机、开关扫描仪软盘驱动器、非接触式开关直接板、感应洁具、感应水龙头、等红外线感应设备。

亿光代理商超毅电子是亿光的15年合作伙伴，拥有着丰富的亿光光电开关的市场经验，因此，如果对于对射式光电开关以及反射式光电开关的相关应用资料跟规格参数，可直接联系我们，我们会为您提供最专业的技术支持。

免费咨询热线4008-800-932。

亿光光耦EL814

09:38:06.0
亿光一级代理商超毅电子
DATASHEET 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER AC INPUT PHOTOCOUPLER EL814 Series
Electro-Optical Characteristics (Ta=25
unless specified otherwise)
Input
Parameter Forward Voltage Input capacitance Symbol VF Cin Min. Typ. 1.2 50 Max. 1.4 250 Unit V pF Condition IF = ± 20mA V = 0, f = 1KHz
Output
Parameter Collector-Emitter dark current Collector-Emitter breakdown voltage Emitter-Collector breakdown voltage Symbol ICEO BVCEO BVECO Min 80 6 Typ. Max. 100 Unit nA V V Condition VCE = 20V, IF = 0mA IC = 0.1mA IE = 0.1mA
Transfer Characteristics
Parameter Current Transfer ratio EL814 CTR EL814A 50 0.7 VCE(sat) RIO fc CIO Tr Tf 5×10 10
Symbol
Min 20
Typ. -
Max. 300
Unit
Condition
Option None M S (TA) S (TB) S1 (TA) S1 (TB) S (TU) S (TD) S1 (TU) S1 (TD) Standard DIP-4

亿光EL817C光耦

Technical Data Sheet PhotocouplerEL817 Series Features:• Current transfer ratio(CTR:MIN.50% at IF =5mA ,VCE =5V) • High isolation voltage between input and output (Viso=5000 V rms ) • Compact dual-in-line package EL817*:1-channel type • Pb free• UL approved (No. E214129) • VDE approved (No. 132249)• SEMKO approved (No. 0143133/01-03) • NEMKO approved (No. P0*******) • DEMKO approved (No. 310352-04) • FIMKO approved (No. FI 16763A2) • CSA approved (No. 1143601) • BSI approved (No. 8592 / 8593)• Options available:- Leads with 0.4”(10.16mm) spacing (M Type) - Leads bends for surface mounting (S Type)- Tape and Reel of Type Ⅰ for SMD(Add”-TA” Suffix) - Tape and Reel of Type Ⅱ for SMD(Add”-TB” Suffix) - The tape is 16mm and is wound on a 33cm reelDescriptionThe EL817 series contains a infrared emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.Applications• Computer terminals• System appliances, measuring instruments• Registers, copiers, automatic vending machines • Cassette type recorder• Electric home appliances, such as fan heaters, etc.• Signal transmission between circuits of different potentialsandimpedancesPhotocouplerEL817 Series Device Selection GuideChip MaterialPart. No.IR PTEL817* GaAs SiliconPhotocouplerEL817 Series2. Factory code shall be marked (T: Taiwan / C: China)3. Year date code4. 2-digit work week5. All dimensions are in millimeters6. Specifications are subject to change without noticeTechnical Data Sheet PhotocouplerEL817 SeriesAbsolute Maximum Ratings ( Ta=25°C )Parameter Symbol Rating UnitForward CurrentI F 50 mA Input Reverse Voltage V R 6 V Power Dissipation P 70mWCollector Power DissipationP C 150 mW Output Collector CurrentI C 50mA Collector-Emitter Voltage V CEO 35 V Emitter-Collector Voltage V ECO 6V Total Power DissipationPtot 200 mW＊1Isolation VoltageViso 5000 V rmsOperating Temperature Topr -55~+110 °CStorage TemperatureTstg -55~+125 °C＊2Soldering TemperatureTsol 260 °C*1 AC for 1 minute, R.H= 40~ 60%RH-Isolation voltage shall be measured using the following method.) (1) Short between anode and cathode on the primary side and ) between collector, emitter and base on the secondary side. ) (2) The isolation voltage tester with zero-cross circuit shall be used. ) (3) The waveform of applied voltage shall be a sine wave *2 For 10 secondsTechnical Data Sheet PhotocouplerEL817 SeriesElectro-Optical Characteristics (Ta=25°C)Parameter Symbol Min. Typ. Max. Unit ConditionForwardV F - 1.2 1.4 V I F =20mA ReverseCurrent IR - - 10 uAV R =4VInputTerminal Ct - 30 250 pF V=0,f=1kHz Collector Dark currentI CEO - - 100 nAV CE =20VOutputCollector- Emitter breakdown voltage BV CEO 35 - - V Ic=0.1mACurrent Transfer ratio CTR 50-600 % I F =5mA ,V CE =5VCollector- Emitter saturation voltageV CE(sat) - 0.1 0.2 V I F =20mA ,Ic=1 mAIsolationresistanceR ISO5×10101011 - ΩDC500V,40~60%R.HFloation capacitance Cf - 0.6 1.0 pF V=0, f=1MHz Cut-off frequency fc - 80 - kHz V CE =5V, I C =2 mA R L =100Ω, -3dBRise time t r - 4 18 us TransferCharacteristicsFall timet f - 3 18 usV CE =2VI C =2mA,R L =100ΩPhotocouplerEL817 Series SupplementTechnical Data Sheet PhotocouplerEL817 SeriesRELIABILITY PLANThe reliability of products shall be satisfied with items listed below.Confidence level : 90 % , LTPD : 10 %ClassificationTest ItemDescription & Condition(Acc.) SampleFailure CriteriaReference StandardOperation Life * Ta = 25 ± 3°C IR: If = 50 mAPt: Pc = 130 mW ( Vf=1.4v) , 1000 hrs0 / 22MIL-S-750 : 1026 MIL-S-883 : 1005JIS C 7021 : B-1High Temperature / High Humidity Reverse Bias (H3TRB)Ta = 85 ± 3°C , Humi. = 85 % rh Pt: 80% * Vce (max rating) , 1000 hrs0 / 22 JIS C 7021 : B-11High TemperatureReverse Bias (HTRB) Ta = 105 ± 3°CPt: 100% * Vce (Max rating) ,1000 hrs0 / 22JIS C 7021 : B-8Low Temperature Storage Ta = -50 ± 3°C, 1000 hrs 0 / 22JIS C 7021 : B-12High Temperature Storage Ta = 125 ± 3°C , 1000 hrs0 / 22 JIS C 7021 : B-10 MIL-S-883 : 1008Endurance testAuto claveP = 15 PSIG , Ta = 121 °C , Humi. = 100 % rh , 48 hrs0 / 22JESD 22-A102-BTemperature Cycling (Air to Air) 125°C ~ - 55 °C30 ~ 30 min , 100 cycles 0 / 22 MIL-S-883 :1010 JIS C 7021 : A-4Thermal Shock (Liquid to Liquid)125 ~ - 55°C t (dwell) = 5 mint (trans.) = 10 sec , 100 cycles0 / 22 MIL-S-202 : 107D MIL-S-750 : 1051 MIL-S-883 :1011Solder ResistanceTa = 260 ± 3°C t (dwell) = 10 ± 1 sec0 / 22 MIL-S-750 : 2031 JIS C 7021 : A-1Environmental TestSolder AbilityTa = 230 ± 3 °C t (dwell) = 5 ± 1 sec0 / 22CTR shift > 1.2Vf > U* 1.0 Ir > U * 1.0 Vce(sat) >U*1.0Bvceo < L*1.0 Bveco < L*1.0L :Low Spec.LimitU : Up Spec. LimitMIL-S-883 : 2003 JIS C 7021 : A-2Technical Data SheetPhotocouplerEL817 Series2. 25 Tubes / Inner Carton3. 12 Inner Cartons / Outside CartonTechnical Data Sheet Photocoupler-11-。

亿光光耦含命名规则

CTR (%)
BVeco (V)
Vce (sat) (V)
Iceo (nA)
0.5
20
7
50
1.0
10
7
0.5
50
100
7
0.3
50
15
6 PIN DIP Darlington Photocoupler
Key Features:
• Wide Current Transfer Ratio selections
100
100
7
1.0
100
50
7
1.2
100
17
Current Optocoupler Offering
6-Pin DIP
****Launched***
Input / Output Function
DC Input / Phototransistor Output
Part Numbers
4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38, CNY17-1, CNY17-2, CNY17-3, CNY17-4, H11A1, H11A2, H11A3, H11A4,
1
6
2
5
3
4
Pin Configuration 1. Anode 2. Cathode 3. No Connection 4. Emitter 5. Collector 6. Base
16
6 PIN DIP Transistor Photocoupler
Model Number
4N32 4N33 4N29 4N30 4N31
2
Photo Coupler Construction

亿光光耦(光电耦合器)的性能特点

亿光光耦（光电耦合器）的性能特点文章出处：广州市超毅电子有限公司亿光光耦的主要优点是单向传输信号,输入端与输出端完全实现了电气隔离,抗干扰能力强,使用寿命长,传输效率高。

它广泛用于电平转换、信号隔离、级间隔离、开关电路、远距离信号传输、脉冲放大、固态继电器(SSR)、仪器仪表、通信设备及微机接口中。

由于光耦的输入阻抗与一般干扰源的阻抗相比较小,因此分压在电耦的输入端的干扰电压较小,它所能提供的电流并不大,不易使半导体二极管发光;由于光电耦的外壳是密封的,它不受外部光的影响;电耦的隔离电阻很大(约1012Ω)、隔离电容很小(约几个pF)所以能阻止电路性耦合产生的电磁干扰。

线性方式工作的电耦是在光耦的输入端加控制电压,在输出端会成比例地产生一个用于进一步控制下一级的电路的电压。

亿光电耦由发光二极管和光敏三极管组成,当发光二极管接通而发光,光敏三级管导通,电耦是电流驱动型,需要足够大的电流才能使发光二极管导通,如果输入信号太小,发光二极管不会导通,其输出信号将失真。

在开关电源,尤其是数字开关电源中,利用线性光耦可构成光耦反馈电路,通过调节控制端电流来改变占空比,达到精密稳压目的。

亿光光耦的技术参数主要有发光二极管正向压降VF、正向电流IF、电流传输比CTR、输入级与输出级之间的绝缘电阻、集电极-发射极反向击穿电压V(BR) CEO、集电极-发射极饱和压降VCE(sat)。

此外,在传输数字信号时还需考虑上升时间、下降时间、延迟时间和存储时间等参数。

电流传输比是光耦的重要参数,通常用直流电流传输比来表示。

当输出电压保持恒定时,它等于直流输出电流IC与直流输入电流IF的百分比。

其公式为：采用一只光敏三极管的光耦,CTR的范围大多为20%～300%(如4N35),而PC817则为80%～160%,达林顿型光耦如4N30)可达100%～5000%。

这表明欲获得同样的输出电流,后者只需较小的输入电流。

因此,CTR参数与晶体管的hFE有某种相似之处。

最全的Proteus电子元件符号大全及汉英对照表

各种电子元件符号正弦交流电流的公式是i=Isin2πfti是交流电流的瞬时值，I是交流电流的最大值，f是交流电的频率，t是时间随着时间的推移，交流电流可以从零变到最大值，从最大值变到零，又从零变到负的最大值，从负的最大值变到零。

在三角函数中2πft相当于角度，它反映了交流电任何时刻所处的状态，是在增大还是在减小，是正的还是负的等等。

因此把2πft叫做相位，或者叫做相。

二极管表示符号:D 变容二极管表示符号:D双向触发二极管表示符号:D稳压二极管表示符号:ZD,D稳压二极管表示符号:ZD,D 桥式整流二极管表示符号:D肖特基二极管隧道二极管隧道二极管光敏二极管或光电接收二极管发光二极管表示符号：LED双色发光二极管表示符号：LED光敏三极管或光电接收三极管表示符号：Q,VT 单结晶体管（双基极二极管）表示符号：Q,VT复合三极管表示符号：Q,VTNPN型三极管表示符号：Q,VTPNP型三极管表示符号：Q,VTPNP型三极管表示符号：Q,VTNPN型三极管表示符号：Q,VT带阻尼二极管NPN型三极管表示符号：Q,VT带阻尼二极管及电阻NPN型三极管表示符号：Q,VT IGBT 场效应管表示符号：Q,VT带阻尼二极管IGBT 场效应管表示符号：Q,VT接面型场效应管P-JFET 接面型场效应管N-JFET 场效应管增强型P-MOS 场效应管增强型N-MOS场效应管耗尽型P-MOS 场效应管耗尽型N-MOS电阻电阻器或固定电阻表示符号：R 电阻电阻器或固定电阻表示符号：R电位器表示符号:VR，RP,W可调电阻表示符号:VR，RP,W电位器表示符号:VR，RP,W可调电阻表示符号:VR，RP,W三脚消磁电阻表示符号：RT 二脚消磁电阻表示符号：RT压敏电阻表示符号：RZ,VAR热敏电阻表示符号：RT光敏电阻CDS 电容（有极性电容）表示符号：电容（有极性电容）表示符号：C可调电容表示符号：C电容（无极性电容）表示符号：C 四端光电光电耦合器表示符号：IC，N六端光电光电耦合器表示符号：IC，N单向可控硅(晶闸管) 双向可控硅(晶闸管) 双向可控硅(晶闸管)晶振石英晶体振荡器表示符号：X晶振石英晶体振荡器表示符号：X 石英晶体滤波器表示符号：X双列集成电路表示符号：IC或U单列集成电路表示符号：IC或U运算放大器倒相放大器AND gate 非门OR gate 或门NAND gate与非门 NOR gate 或非门保险管表示符号：F保险管表示符号：F变压器表示符号：T 永久磁铁电感表示符号：L带铁芯电感线圈表示符号：L继电器继电器线路输入端子按键开关表示符号:S 双极开关扬声器电池或直流电源电池或直流电源电流源特别重要的AC交流DC直流公共接地端恒压源恒流源信号源GND公共接地端电子元件符号及字母表示电流表 PA 电压表 PV有功电度表 PJ 无功电度表 PJR频率表 PF 相位表 PPA最大需量表(负荷监控仪) PM功率因数表 PPF 有功功率表 PW无功功率表 PR 无功电流表 PAR声信号 HA 光信号 HS指示灯 HL 红色灯 HR绿色灯 HG 黄色灯 HY蓝色灯 HB 白色灯 HW连接片 XB 插头 XP插座 XS 端子板 XT电线,电缆,母线 W 直流母线 WB插接式(馈电)母线 WIB 电力分支线 WP照明分支线 WL 应急照明分支线 WE电力干线 WPM 照明干线 WLM应急照明干线 WEM 滑触线 WT合闸小母线 WCL 控制小母线 WC信号小母线 WS 闪光小母线 WF事故音响小母线 WFS 预告音响小母线 WPS电压小母线 WV 事故照明小母线 WELM避雷器 F 熔断器 FU快速熔断器 FTF 跌落式熔断器 FF限压保护器件 FV 电容器 C电力电容器 CE 正转按钮 SBF反转按钮 SBR 停止按钮 SBS紧急按钮 SBE 试验按钮 SBT复位按钮 SR 限位开关 SQ 接近开关 SQP手动控制开关 SH 时间控制开关 SK液位控制开关 SL 湿度控制开关 SM压力控制开关 SP 速度控制开关 SS温度控制开关,辅助开关 ST电压表切换开关 SV 电流表切换开关 SA整流器 U 可控硅整流器 UR 控制电路有电源的整流器 VC变频器 UF 变流器 UC 逆变器 UI 电动机 M异步电动机 MA 同步电动机 MS 直流电动机 MD绕线转子感应电动机 MW 鼠笼型电动机 MC电动阀 YM 电磁阀 YV 防火阀 YF 排烟阀 YS 电磁锁 YL跳闸线圈 YT 合闸线圈 YC 气动执行器 YPA,YA 电动执行器 YE发热器件(电加热) FH 照明灯(发光器件) EL 空气调节器 EV电加热器加热元件 EE 感应线圈,电抗器 L励磁线圈 LF 消弧线圈 LA 滤波电容器 LL电阻器,变阻器 R 电位器 RP热敏电阻 RT 光敏电阻 RL 压敏电阻 RPS 接地电阻 RG放电电阻 RD 启动变阻器 RS 频敏变阻器 RF 限流电阻器 RC光电池,热电传感器 B 压力变换器 BP 温度变换器 BT 速度变换器 BV 时间测量传感器 BT1、BK 液位测量传感器 BL 温度测量传感器 BH、BM电子元件符号及字母表示电流表 PA 电压表 PV有功电度表 PJ 无功电度表 PJR频率表 PF 相位表 PPA最大需量表(负荷监控仪) PM功率因数表 PPF 有功功率表 PW无功功率表 PR 无功电流表 PAR声信号 HA 光信号 HS指示灯 HL 红色灯 HR绿色灯 HG 黄色灯 HY蓝色灯 HB 白色灯 HW连接片 XB 插头 XP插座 XS 端子板 XT电线,电缆,母线 W 直流母线 WB插接式(馈电)母线 WIB 电力分支线 WP照明分支线 WL 应急照明分支线 WE 电力干线 WPM 照明干线 WLM应急照明干线 WEM 滑触线 WT合闸小母线 WCL 控制小母线 WC信号小母线 WS 闪光小母线 WF事故音响小母线 WFS 预告音响小母线 WPS 电压小母线 WV 事故照明小母线 WELM 避雷器 F 熔断器 FU快速熔断器 FTF 跌落式熔断器 FF限压保护器件 FV 电容器 C电力电容器 CE 正转按钮 SBF反转按钮 SBR 停止按钮 SBS紧急按钮 SBE 试验按钮 SBT复位按钮 SR 限位开关 SQ 接近开关 SQP手动控制开关 SH 时间控制开关 SK液位控制开关 SL 湿度控制开关 SM压力控制开关 SP 速度控制开关 SS温度控制开关,辅助开关 ST电压表切换开关 SV 电流表切换开关 SA整流器 U 可控硅整流器 UR 控制电路有电源的整流器 VC变频器 UF 变流器 UC 逆变器 UI 电动机 M异步电动机 MA 同步电动机 MS 直流电动机 MD绕线转子感应电动机 MW 鼠笼型电动机 MC电动阀 YM 电磁阀 YV 防火阀 YF 排烟阀 YS 电磁锁 YL跳闸线圈 YT 合闸线圈 YC 气动执行器 YPA,YA 电动执行器 YE 发热器件(电加热) FH 照明灯(发光器件) EL 空气调节器 EV电加热器加热元件 EE 感应线圈,电抗器 L励磁线圈 LF 消弧线圈 LA 滤波电容器 LL电阻器,变阻器 R 电位器 RP热敏电阻 RT 光敏电阻 RL 压敏电阻 RPS 接地电阻 RG放电电阻 RD 启动变阻器 RS 频敏变阻器 RF 限流电阻器 RC光电池,热电传感器 B 压力变换器 BP 温度变换器 BT 速度变换器 BV 时间测量传感器 BT1、BK 液位测量传感器 BL 温度测量传感器 BH、BMproteus元器件中英文对照表AD芯片-----TECHWELL TW6805A仿真软件里的AD0809有问题,用0808代替定时/计数器的使用方法：CLK：计数和测频状态时，数字波的输入端。

光电耦合器的工作原理是什么

光电耦合器的工作原理是什么光电耦合器（Optocoupler）又称光电隔离器或光电隔离耦合器，是一种能够将电和光之间相互转换的器件。

它通常由一个发光二极管（LED）、一个光敏二极管（光电晶体管或光敏三极管）和一个光学耦合器件（光导纤维或光学隔离层）组成。

1.发光二极管发光：当输入端施加电流时，发光二极管中的LED发出光线。

这个光线通常是红外线，但也可以是其他可见光波段。

2.光线传递：发出的光线经过光学耦合器件，如光导纤维或光学隔离层，将光线传递到接收端。

3.光敏二极管感光：接收端的光敏二极管接收到发出的光线，并在其PN结上产生电流。

4.电流放大：感光二极管输出的电流被放大，以便用于驱动输出端的负载电路。

5.输出信号：通过输出端的负载电路，将放大后的电流转化为输出电压或其他信号。

1.电气隔离：光电耦合器在输入端和输出端之间实现了电气隔离，这样可以防止电气噪声、电磁干扰和地位差异等因素对电路的影响。

2.高速传输：光信号的传输速度比电信号快得多，因此光电耦合器可以实现高速的信号传输，适用于需要快速响应的应用场景。

3.安全性：由于光电耦合器实现了电与光的隔离，可以防止高电压或高电流通过到达较低电压或电流的输出端，从而提高设备和人员的安全性。

4.小尺寸：光电耦合器通常比传统的电气隔离器件小巧轻便，适用于对尺寸有限制的应用场景。

光电耦合器在实际应用中具有广泛的用途，例如在工业自动化控制系统中用于隔离输入和输出信号、在医疗设备中用于隔离高压和低压电路、在电源供电中用于隔离输入和输出端等。

总之，光电耦合器通过光线传递实现了电与光之间的隔离与耦合，为电路提供了高速传输、电气隔离和安全性保证的解决方案。

亿光光耦ELT3021

4PIN DIP RANDOM-PHASE TRIAC DRIVER PHOTOCOUPLER ELT302X, ELT305X SeriesFeatures:• Peak breakdown voltage -400V: ELT302X -600V: ELT305X• High isolation voltage between input and output (Viso=5000 V rms )• Compact dual-in-line package • Pb free and RoHS compliant.•UL and cUL approved(No. E214129)• VDE approved (No.40028391)• SEMKO approved • NEMKO approved • DEMKO approved •FIMKO approvedDescriptionThe ELT302X and ELT305X series of devices each consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon random phase photo Triac.They are designed for interfacing between electronic controls and power triacs to control resistive and inductive loads for 115 to 240 VAC operations.Applications●Solenoid/valve controls ●Lamp ballasts●Static AC power switch●Interfacing microprocessors to 115 to 240Vac peripherals ●Incandescent lamp dimmers ●Temperature controls ●Motor controlsSchematicPin Configuration 1. Anode 2. Cathode 3. Terminal 4. TerminalAbsolute Maximum Ratings (Ta=25 )Parameter Symbol Rating Unit Input Forward current I F60mA Reverse voltage V R6VPower dissipationDerating factor (above T a = 85 C)P D100mW3.8mW/°COutput Off-state OutputTerminal Voltage ELT302XV DRM400V ELT305X600Peak Repetitive Surge Current I TSM1APower dissipationDerating factor (above T a = 85 C)P C300mW7.4mW/Total power dissipation P TOT330mW Isolation voltage*1V ISO5000Vrms Operating temperature T OPR-55 to 100 Storage temperature T STG-55 to 125 Soldering Temperature*2T SOL260 Notes:*1AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1& 2 are shorted together, and pins3 & 4are shorted together. *2 For 10 secondsElectro-Optical Characteristics (Ta=25 unless specified otherwise)InputParameter Symbol Min.Typ.*Max.Unit Condition Forward Voltage V F- 1.18 1.5V I F=10mA Reverse Leakage current I R--10µA V R=6V OutputParameter Symbol Min.Typ.*Max.Unit ConditionPeak Blocking Current I DRM--100nA V DRM = Rated V DRM I F=0mAPeak On-state Voltage V TM-- 2.5V I TM=100mA peak, I F=Rated I FTCritical Rate of Rise off-state Voltage ELT302Xdv/dt-100-V/µsV PEAK=Rated V DRM,I F=0 (Fig. 8)ELT305X1000--V PEAK=400V,I F=0 (Fig. 8)Transfer CharacteristicsParameter Symbol Min.Typ.*Max.Unit ConditionLED Trigger Current ELT3021ELT3051I FT--15mA Main terminal Voltage=3V ELT3022ELT3052--10ELT3023ELT3053--5Holding Current I H-250-µA * Typical values at T a= 25°CTypical Electro-Optical Characteristics CurvesFigure 8. Static dv/dt Test Circuit & WaveformMeasurement MethodThe high voltage pulse is set to the required V PEAK value and applied to the D.U.T. output side through the RC circuit above. LED current is not applied. The waveform V T is monitored using a x100scope probe. By varying R TEST , the dv/dt (slope) is increased, until the D.U.T. is observed to trigger (waveform collapses). The dv/dt is then decreased until the D.U.T. stops triggering. At this point, τRC is recorded and the dv/dt calculated.For example, V PEAK = 400V for EL302X series. The dv/dt value is calculated as follows:V PEAKApplied V T WaveformτRC0.632 x V PEAK50 Ω10 k ΩD.U.T.R TESTHigh Voltage Pulse SourceC TESTV T A KT1T20.63 x 400τRCdv/dt = = 252τRC0.632 x V PEAK τRCdv/dt =Order InformationPart NumberELT302XY(Z)-Vor ELT305XY(Z)-VNoteX = Part No. (1, 2 or 3)Y = Lead form option (S, S1, M or none)Z = Tape and reel option (TA, TB ,TU, TD or none).V = VDE safety approved (optional)Option Description Packing quantity None Standard DIP-4100units per tube M Wide lead bend(0.4 inch spacing)100units per tube S(TA)Surface mount lead form+ TA tape & reel option1000units per reel S(TB)Surface mount lead form+ TB tape & reel option1000units per reel S1(TA)Surface mount lead form (low profile) + TA tape & reel option1000 units per reel S1(TB)Surface mount lead form (low profile) + TB tape & reel option1000 units per reel S (TU)Surface mount lead form + TU tape & reel option1500units per reel S(TD)Surface mount lead form + TD tape & reel option1500units per reel S1(TU)Surface mount lead form (low profile) + TU tape & reel option1500units per reel S1(TD)Surface mount lead form (low profile) + TD tape & reel option1500 units per reelPackage Dimension(Dimensions in mm) Standard DIP TypeOption M TypeOption S TypeOption S1 TypeRecommended pad layout for surface mount leadformDevice MarkingNotes EL denotes EverlightT3053denotes Device Number Y denotes 1 digit Year code WWdenotes 2 digit Week code Vdenotes VDE optionT3053EL YWW VTape dimensionsDimension No.A B Do D1E FDimension No.Po P1P2t W K Dimension(mm) 4.0±0.112.0±0.1 2.0±0.10.35±0.116.0±0.3 4.75±0.1Tape dimensionsDimension No.A B C D EF Dimension(mm)16.00±0.37.5±0.1 1.75±0.18.0±0.1 2.0±0.1 4.0±0.1Dimension No.G H I J K L Dimension(mm)1.55±0.0510.4±0.10.4±0.054.60±0.15.1±0.11.55±0.05Precautions for Use1. Soldering Condition1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow ProfileNote: Reference: IPC/JEDEC J-STD-020DPreheatTemperature min (T smin) 150 °CTemperature max (T smax)200°CTime (T smin to T smax) (t s)60-120 secondsAverage ramp-up rate (T smax to T p) 3 °C/second maxOtherLiquidus Temperature (T L)217 °CTime above Liquidus Temperature (t L)60-100 secPeak Temperature (T P) 260°CTime within 5 °C of Actual Peak Temperature: T P-5°C 30 sRamp-Down Rate from Peak Temperature 6°C /second max.Time 25°C to peak temperature8 minutes max.Reflow times 3 times.DISCLAIMER1.Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for abovespecification.2.When using this product, please observe the absolute maximum ratings and the instructions for using outlined in thesespecification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets.3.These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’treproduce or cause anyone to reproduce them without EVERLIGHT’s consent.。

亿光光耦ELT3041,6PIN光电耦合器

Applications
Solenoid/valve controls Light controls Static power switch AC motor drivers E.M. contactors Temperature controls AC Motor starters
063x600?rcvpeak0appliedvtwaveform?rc0632xvpeakdvdt378?rc0632xvpeak?rcdvdt50?10k?dutrtesthighvoltagepulsesourcectestvtakt1t2zerocrossingcircuit亿光一级代理商超毅电子lifecyclephase
For example, VPEAK = 600V for ELT306X series. The dv/dt value is calculated as follows: dv/dt = 0.63 x 600 RC = 378 RC
6 Copyright Revision :4 © LifecyclePhase:
亿光一级代理商超毅电子
DATASHEET 4 PIN DIP ZERO-CROSS TRIAC DRIVER PHOTOCOUPLER ELT304X, ELT306X, ELT308X Series
Electro-Optical Characteristics (Ta=25
unless specified otherwise)
1 Copyright Revision :4 © LifecyclePhase:
Date:2014-06-26 2010, Everlight All Rights Reserved. Release Date :June 14, 2014. Issue Release No: DPC-0000134 Rev.4 Expired Period: Forever

2024年光耦元件市场前景分析

2024年光耦元件市场前景分析引言光耦元件是一种能够将电信号转化为光信号，并进行隔离传输的器件。

随着电子产品和光通信的快速发展，光耦元件作为一种重要的光电转换器件，在电子工程领域具有广泛的应用。

本文将对光耦元件市场的前景进行分析，以探讨其发展趋势和市场潜力。

市场规模分析根据市场研究数据，全球光耦元件市场在过去几年持续增长，并将在未来几年保持良好的增长势头。

光耦元件市场规模主要受到以下几个因素的驱动：1. 电子产品的快速发展随着智能手机、平板电脑等电子产品的普及和不断更新换代，对光耦元件的需求也在不断增长。

光耦元件作为传感器和隔离器件的重要组成部分，广泛应用于电源管理、通信、自动化控制等领域。

2. 光通信的普及光通信作为一种快速、高带宽的通信方式，被广泛应用于数据中心、云计算、物联网等领域。

光耦元件作为光通信的关键元件之一，其需求量也随着光通信市场的增长而增加。

3. 新兴应用领域的需求光耦元件在医疗、汽车电子、工业控制等新兴应用领域也具有重要价值。

随着这些领域的快速发展，对光耦元件的需求也在逐渐增加。

综合以上因素，光耦元件市场规模将在未来几年持续增长。

技术趋势分析光耦元件市场的发展除了受到市场需求的推动，同时也与技术的发展密切相关。

以下是未来几年光耦元件市场的技术趋势：1. 高速传输能力随着通信技术的发展，对高速传输能力的需求越来越迫切。

光耦元件作为光电转换器件，需要具备较高的传输速度和带宽，以满足新一代通信系统的需求。

2. 小型化和集成化随着电子产品的趋向小型化和轻便化，对光耦元件尺寸的要求也越来越严格。

未来的光耦元件将趋向于更小型化和集成化，以满足各种场景下的应用需求。

3. 低功耗和高能效在节能环保的背景下，对光耦元件的功耗和能效要求越来越高。

未来的光耦元件将通过技术创新和材料改进，实现更低的功耗和更高的能效。

市场竞争格局目前，光耦元件市场存在着较为激烈的竞争格局。

主要的竞争者包括国际知名的光电器件厂商和一些新兴的本地企业。

24v限位光耦隔离

24v限位光耦隔离
24V限位光耦隔离是一种电子器件，用于隔离和保护24V电
路之间的信号传输。

光耦隔离器是指利用光电技术，将传输信号的电路与接收信号的电路通过光电元件进行隔离，从而实现信号的高速传输和电气隔离的功能。

在24V限位光耦隔离中，它可以将24V电路之间的信号隔离，保护接收信号的电路免
受高压和瞬态电压的侵害，提高电路的稳定性和可靠性。

这种隔离器通常由外部元件、光电转换器和输出电路组成。

外部元件用于接收输入信号和控制光电转换器的工作状态，光电转换器则将输入信号转换为光信号，通过光电隔离达到电气隔离的目的，最后输出电路将光信号转换为输出信号。

24V限位光耦隔离器广泛应用于工业自动化控制系统、电力系统和通信系统中，为设备和电路提供了更高的安全性和可靠性。

中国电子科技集团公司光电耦合器说明书

光电耦合器说明书中国电子科技集团公司第四十四研究所目录1、光电耦合器简介 (1)2、替代国外产品情况 (4)3、光电耦合器典型应用图 (7)4、光电耦合器GH3201Z (10)5、光电耦合器GH302 (12)6、光电耦合器GH3201Z-2 (14)7、光电耦合器GH302-2 (16)8、光电耦合器GH3201Z-2A (18)9、光电耦合器GH3201Z-4 (20)10、光电耦合器GH302-4 (22)11、光电耦合器GH3201Z-6 (24)12、光电耦合器GH3201Z-B (26)13、光电耦合器GH3202Z (28)14、光电耦合器GH3202S (30)15、光电耦合器GH402S (32)16、光电耦合器GH3202J (34)17、光电耦合器GH1201Z (36)18、光电耦合器GH140Z (38)19、光电耦合器GH5520Z (40)20、光电耦合器GH332 (42)21、光电耦合器GH332-2 (44)22、光电耦合器GH1121Z (46)23、光电耦合器GH127J (48)24、光电耦合器GH1100Z (50)25、光电耦合器GH1351Z (52)26、高速光电耦合器GH1205Z (54)27、高速光电耦合器GH1403Z (56)28、高速光电耦合器GH1143Z (58)29、高速光电耦合器GH2240Z (60)30、高速光电耦合器GH5231Z (62)31、高速光电耦合器GH5231Z-F (64)32、高速光电耦合器GH5631Z (66)33、高速光电耦合器GH0630J (68)34、高速光电耦合器GH6631S (70)35、高速光电耦合器GH4440Z (72)36、高速光电耦合器GH5540Z (74)37、高速光电耦合器GH5541Z (76)38、光电耦合器GG4022Z (78)39、高压光电耦合器GH1122Z (80)40、高压光电耦合器GH1122Z-A (82)41、高速光电耦合器GH1142Z (84)42、线性光电耦合器GG4201Z (86)43、线性光电耦合器GG4202Z (88)44、线性光电耦合器GG4203Z (90)45、线性光电耦合器GG1141Z (92)46、传感器GH1190 (94)47、传感器GH1191Z (96)48、光开关GH8220Z (98)49、光开关GH4420Z (100)50、光电驱动模块HCD0201 (102)51、固体继电器GH1220Z (104)52、固体继电器GH275Z (106)53、中频检波器GH1100R (108)54、光电耦合器抗干扰能力曲线 (110)55、光电耦合器典型响应曲线 (111)光电耦合器简介概述光电耦合器是一种把红外光发射器件和红外光接受器件以及信号处理电路等封装在同一管座内的器件。

亿光组装LED发光二极管A264B-SUB-S400-A4规格书(精)

EVERLIGHT ELECTRONICS CO.,LTD.Technical Data Sheet3.0mm Round Type LED LampsA264B/SUB/S400-A4█ Features :●Low power consumption●High efficiency and low cost●Good control and free combinations on the colors of LED lamps ●Good lock and easy to ass embly ●Stackable and easy to assembly ●Stackable vertically and easy to assembly ●Versatile mounting on P.C board or panel ●Stackable horizontally and easy to assembly ●Pb free█ Descriptions :●ARRAY=Plastic Holder+Combinations of Lamps●The array will e asily mount the applicable lamps on any panel up to█ Applications :●ed as indicators of indicating the Degree, Functions, Positions etc, in electronic instruments.ChipMaterial Emitted Color 264-10SUBD/C470/S400-A4InGaNSuper BlueBlue DiffusedEVERLIGHT ELECTRONICS CO.,LTD.http : //REV.:1Page: 1 of 6Device Number :CDAE-026-087Prepared date: 2005/2/21Prepared by:Lian Xiang YouLens Color PART NO.020-******** QQ2462655096EVERLIGHT ELECTRONICS CO.,LTD.█ Absolute Maximum Ratings at Ta = 25℃Parameter Symbol Rating UnitForward Current I F25mAOperating Temperature Topr-40 to +85℃Storage Temperature Tstg-40 to +100℃Soldering Temperature Tsol260 ± 5℃Electrostatic Discharge ESD150VPower Dissipation Pd110mWPeak Forward Current I F(Peak100mA Reverse Voltage V R5VNote: *1:I FP Conditions --Pulse Width ≦ 1msec and Duty ≦ 1/10.*2:Soldering time ≦ 5 seconds.EVERLIGHT ELECTRONICS CO.,LTD.http : // REV.:1Page: 2 0f 6 Device Number :CDAE-026-087Prepared date:2005/2/21 Prepared by:Lian Xiang YouEVERLIGHT ELECTRONICS CO.,LTD.Technical Data Sheet3.0mm Round Type LED LampsA264B/SUB/S400-A4Min.Typ.Max.Unit I F =20mA / 3.4 4.0V V R =5V //50μA I F =20mA 160250/mcd I F =20mA /35/deg I F =20mA /468/nm I F =20mA /470/nm I F =20mA/35/nmEVERLIGHT ELECTRONICS CO.,LTD. http : // REV.:1Page:3 of 6Device Number :CDAE-026-087Prepared date:Prepared by:Lian Xiang YouDominant Wavelength Spectrum RadiationBandwidthParameter Condition Forward Voltage Reverse Current Luminous Intensity Viewing Angle Peak Wavelength Symbol I R Iv 2θ1/2Electro-Optical Characteristics(Ta=25℃2005/2/21λp λd △λV FEVERLIGHT ELECTRONICS CO.,LTD.Technical Data Sheet3.0mm Round Type LED LampsA264B/SUB/S400-A4█Reliability test items and conditions:The reliability of products shall be satisfied with items listed below. Confidence level:97% LTPD:3%NO Item Test ConditionsSample Size FailureJudgment Criteria1Solder Heat TEMP : 260℃ ± 5 ℃76 PCSH : +100℃ 15min2Temperature Cycle∫ 5 min 76 PCSL : -40℃ 15min H : +100℃ 5min3Thermal Shock ∫ 10 sec 76 PCSL : -10℃ 5min 4High Temperature Storage TEMP : 100℃76 PCS5Low Temperature Storage TEMP : -40℃76 PCSTEMP : 25℃I F = 20mA 7High Temperature / HighHumidity85℃ / 85% RH76 PCSNote :Ivt:The test Iv value of the chip before the reliablility testIv:The test value of the chip that has completed the reliablility test U:Upper Specification Limit L: Lower Specification LimitEVERLIGHT ELECTRONICS CO.,LTD.http : // REV.:1 Page:5 of 6Device Number :CDAE-026-087Prepared date: Prepared by:Lian Xiang You0/10/11000 HRS 0/10/11000 HRS6DC Operating Life 1000 HRS 2005/2/211000 HRSTest Hours/Cycle Ac/Re10 SECIv≦Ivt*0.5or Vf≧Uor Vf≦L 0/1300 CYCLES 0/1300 CYCLES 0/176 PCSEVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet 3.0mm Round Type LED Lamps A264B/SUB/S400-A4 Packing Quantity Specification1.250PCS/1Bag，4Bags/1Box2. 10Boxes/1Carton Label Form Specification CPN: Customer’s Production Numb er P/N : Production Number QTY: Packing QuantityA264B/SUB/S400-A4 CAT: Ranks HUE: Peak Wavelength REF: Reference LOT No: Lot Number MADE IN TAIWAN: Production Place Notes 1. Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for above specification. 2. When using this product, please observe the absolute maximum ratings and the instructions for using outlined in these specification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets. 3. These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’t reprodu ce or cause anyone to reproduce them without EVERLIGHT ’sconsent. EVERLIGHT ELECTRONICS CO., LTD. Office: No 25, Lane 76, Sec 3, Chung Yang Rd, Tucheng, Taipei 236, Taiwan, R.O.C Tel: (886-2-2267-2000, 2267-9936 Fax: 886-2267-6244, 2267-6189, 2267-6306 http:\\ EVERLIGHT ELECTRONICS CO.,LTD. http :// Prepared date: 2005/2/21 REV.: Prepared by: 1 Page: 6 0f 6 Lian Xiang You Device Number : CDAE-026-087。

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Output
Collector current Collector-Emitter voltage
Emitter-Collector voltage
Total Power Dissipation Isolation Voltage*1
Operating Temperature
Storage Temperature Soldering Temperature*2
6
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000041 Rev. 3
亿光一级代理商超毅电子
DATASHEET 4 PIN DIP VERY HIGH ISOLATION VOLTAGE PHOTOCOUPLER CNY64 series, CNY65 series
BVCEO
80
Emitter-Collector breakdown voltage
BVECO
7
Collector-Emitter capacitance
CCE
-
Transfer Characteristics
Parameter
Symbol Min
CNY64
50
CNY65
Current Transfer
Applications
z Switch mode power supply z Line receiver z Computer peripheral interface z Microprocessor system interface z Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage ≤ 300 V - for appl. class I - IV at mains voltage ≤ 600 V - for appl. class I - III at mains voltage ≤ 1000 V according to DIN EN 60747-5-5.
comparative tracking index: CTI ≥ 200 • Thickness through insulation ≧3mm
• Pb free and RoHS compliant. • CUL approved (No. E214129) • VDE approved (No. 40027351) • FIMKO approved (No. 25464)
亿光一级代理商超毅电子
DATASHEET 4 PIN DIP VERY HIGH ISOLATION VOLTAGE PHOTOCOUPLER CNY64 series, CNY65 series
Typical Electro-Optical Characteristics Curves
4
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000041 Rev. 3
1 Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000041 Rev. 3
cห้องสมุดไป่ตู้
亿光一级代理商超毅电子
DATASHEET 4 PIN DIP VERY HIGH ISOLATION VOLTAGE PHOTOCOUPLER CNY64 series, CNY65 series
亿光一级代理商超毅电子
DATASHEET 4 PIN DIP VERY HIGH ISOLATION VOLTAGE PHOTOCOUPLER CNY64 series, CNY65 series
Order Information
Part Number
CNY64Y-V
or
CNY65Y-V
Note
Y = CTR Rank (A, B, or none) V = VDE safety (optional).
2
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000041 Rev. 3

亿光一级代理商超毅电子
DATASHEET 4 PIN DIP VERY HIGH ISOLATION VOLTAGE PHOTOCOUPLER CNY64 series, CNY65 series
亿光一级代理商超毅电子
DATASHEET 4 PIN DIP VERY HIGH ISOLATION VOLTAGE PHOTOCOUPLER CNY64 series, CNY65 series
VCC
IF
IC
RL
Input Pulse
Output
Input RIN
Output Pulse
tr ton
* Typical values at Ta = 25°C
3
Copyright © 2010, Everlight All Rights Reserved. Release Date : May 21, 2013. Issue No: DPC-0000041 Rev. 3

亿光一级代理商超毅电子
4 PIN DIP VERY HIGH ISOLATION VOLTAGE PHOTOCOUPLER CNY64 series, CNY65 series
Schematic
CNY64
CNY65
Features:
• High Voltage , BVCEO=80V (min.) • Operating temperature up to +85°C • High isolation voltage between input and output, Viso = 8200 Vrms • Rated recurring peak voltage (repetitive), VIORM = 1000 VRMS • Creepage current resistance according to VDE 0303/IEC 60112
Unit
Condition
%
IF = 5mA ,VCE = 5V
V
IF = 10mA , IC = 1mA
Ω
VIO = 500Vdc, 40~60% R.H.
pF
VIO = 0, f = 1MHz
VCC = 5V, IC = 5mA, RL = 100Ω µs
VCC = 5V, IC = 5mA, RL = 100Ω
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Rating
Unit
Forward current
Input
Peak forward current (<10µs) Reverse voltage
Power dissipation Collector power dissipation
亿光一级代理商超毅电子
DATASHEET 4 PIN DIP VERY HIGH ISOLATION VOLTAGE PHOTOCOUPLER CNY64 series, CNY65 series
Device Marking
EL CNY64 RYWWV
Notes
EL CNY64 R Y WW V
denotes Everlight denotes Part no. denotes CTR rank (A or B) denotes 1 digit Year code denotes 2 digit Week code denotes VDE safety (optional)
Pin Configuration 1. Anode 2. Cathode 3. Emitter 4. Collector
Description
The CNY64 and CNY65 series contains an infrared emitting diode optically coupled to a phototransistor. These devices are packaged in an 4-pin DIP package and providing a distance between input and output for highest safety requirement of >3mm.
Option CNY64 CNY64-V CNY65 CNY65-V
Standard Standard + VDE Standard Standard + VDE
Description
Packing quantity 60 units per tube 60 units per tube 45 units per tube 45 units per tube
CNY64A
CTR
63
ratio
CNY65A
CNY64B
100
CNY65B
Collector-Emitter saturation voltage