亿光槽型光耦ITR8103
亿光EL30系列光耦及过零检测
亿光亿光过零检测过零检测过零检测光耦光耦
驱动大功率交流器件时常用双向可控硅进行功率控制，根据控制方式的不同有过零控制和移相控制。
不管哪种控制都要对零点进行检测，因为双向过控硅的特性是到了交流的零点，可控硅会自动关闭输出。
我们检测零点目的就是可控硅在零点关闭输出后，我们可以根据功率的需求选择时间来重新触发可控硅。
但对于单片机弱电直接控制交流肯定是不现实的，用继电器控制只能实现简单的慢速的开关量控制，而如果要实现功率调节，我们就需要用光特性的固态继电器，这种器件比较贵。
而假如用光耦肯定也是不行的，因为普通的光耦是单向器件，对于交流的网电它是不能实现控制的。
在这种情况下，我们最好的选择就是用EL30XX 系列的光控
可控硅，用得最多的EL3053和EL3083，它们的前端触发电流都是5mA ，隔离电压达到5000Vrms ，适合于对电绝缘特性要求高的工控或医疗电子行业。
EL3053和EL3083的主要区别就是EL3083有过零检测，MOC3053没有过零检测，对于有过零检测功能的EL3083，它每次在过零点的时候会判断有没有光输入，即有没有前置电流If ，如果有If ，那么在这个周期之内，它是导通的，所以它只能决定一个网电源周期内它是不是导通的，而不能决定在一个周期的某一个时刻
开始导通。
基于这种特性我们可以用它来实现过零控制，过零控制的缺点是控制精度低，优点是对电网没有污染。
对于没有过零检测的EL3053来说，它在有光输入的时刻开始到这个周期的结束它都是导通的。
基于这种特性，如果我们已经检测到了零点，我们就可以在零点的时刻开始延时一段时间来输入前置电流If，用它来实现移相检测。
QQ:312066116。
亿光光耦TIL113
6 PIN DIP PHOTODARLINGTON PHOTOCOUPLERTIL113, 4NXX, H11BX SeriesFeatures:• 4NXX series: 4N29, 4N30, 4N31, 4N32, 4N33• H11BX series: H11B1, H11B2, H11B3, H11B255• High isolation voltage between inputand output (Viso=5000 V rms )• Creepage distance >7.62 mm• Operating temperature up to +110°C• Compact small outline package• Pb free and RoHS compliant.• UL approved (No. E214129)• VDE approved (No. 132249)• SEMKO approved• NEMKO approved• DEMKO approved• FIMKO approved• CSA approvedDescriptionThe TIL113, 4NXX and H11BX series of devices each consist of an infrared emitting diode optically coupled to a photo darlington detector.They are packaged in a 6-pin DIP package and available in wide-lead spacing and SMD option. ApplicationsLow power logic circuitsTelecommunications equipmentPortable electronicsInterfacing coupling systems of different potentials and impedancesSchematicPin Configuration1. Anode2. Cathode3. No Connection4. Emitter5. Collector6. BaseAbsolute Maximum Ratings (Ta=25℃)Parameter Symbol Rating UnitInput Forward current I F60 mA Peak forward current (1us, pulse) I FP 1 AReverse voltage V R 6 VPower dissipationNo derating required up to Ta = 100°C P D120 mW3.8 mW/°COutputPower dissipationDerating factor (above Ta = 80°C) P C 150 mW 6.5 mW/°CCollector-Emitter voltage V CEO55 VCollector-Base voltage V CBO55 VEmitter-Collector voltage V ECO7 VEmitter-Base voltage V EBO7 V Total power dissipation P TOT200 mW Isolation voltage V ISO5000 Vrms Operating temperature T OPR-55~+100 °C Storage temperature T STG-55~+125 °C Soldering temperature *2T SOL260 °C Notes:*1 AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 & 3 are shorted together, and pins 4, 5 & 6 are shorted together. *2 For 10 secondsElectro-Optical Characteristics (Ta=25℃unless specified otherwise)InputParameter Symbol Min. Typ.* Max. Unit ConditionForward Voltage V F- 1.2 1.5 V I F= 10mAI F= 50mA for H11B3Reverse Current I R- - 10 µA V R= 6VInput capacitance C in- 50 - pF V = 0, f = 1MHz OutputParameter Symbol Min. Typ.* Max. Unit ConditionCollector-Emitter darkcurrentI CEO- - 100 nA V CE= 10V Collector-Emitterbreakdown voltageBV CEO55 - - V I c=1mAEmitter-Collectorbreakdown voltageBV CBO55 - - V I C=0.1mA Emitter-Collectorbreakdown voltageBV ECO7 - - V I E=0.1mATransfer Characteristics (Ta=25°C unless specified otherwise)Parameter Symbol Min Typ. Max. Unit ConditionCurrent transfer ratio4N324N33CTR500 - -%I F= 10mA ,V CE= 10V 4N294N30100 - -4N31 50 - -H11B1 500 - -I F= 1mA ,V CE= 5VH11B2 200 - -H11B3 100 - -H11B255 100 - - I F= 10mA ,V CE= 5V TIL113 300 - - I F= 10mA ,V CE= 1VTransfer Characteristics (T a=25°C unless specified otherwise)Parameter Symbol Min Typ. Max. Unit ConditionCollector-e mitter saturation voltage4N294N304N324N33V CE(sat)- - 1.0VI F = 8mA ,I c = 2mA4N31TIL113- - 1.2 I F = 8mA ,I c = 2mAH11B1H11B2H11B3- - 1.0 I F = 1mA ,I c = 1mAH11B255 - - 1.0 I F = 50mA ,I c = 50mAIsolation resistance R IO1011- - ΩV IO = 500Vdc Input-outputCapacitanceC IO- 0.8 - pF V IO = 0, f = 1MHzTurn-on timeH11B1H11B2H11B3H11B255Ton- 25 -µsV CC = 10V, I F = 10mA,R L = 100Ω4N294N304N314N324N33TIL113- - 5V CC = 10V, I C = 50mA,I F=200mATurn-off timeH11B1H11B2H11B3H11B255Toff- 18 -µsV CC = 10V,I F = 10mA,R L = 100Ω4N324N33TIL113- - 100 VCC= 10V,I C = 50mA,I F=200mA 4N294N304N31- - 40* Typical values at T a = 25°CTypical Electro-Optical Characteristics CurvesV CCI FOutputFigure 7. Switching Time Test Circuit & WaveformsOrder InformationPart Number4NXXY(Z)-Vor H11BXY(Z)-Vor TIL113Y(Z)-VNoteXX = Part No. for 4NX series (29, 30, 31, 32 or 33)X = Part No. for H11BX series (1, 2, 3 or 255)Y = Lead form option (S, S1, M or none)Z = Tape and reel option (TA, TB or none).V = VDE safety (optional)Option Description Packing quantity None Standard DIP-6 65 units per tube M Wide lead bend (0.4 inch spacing) 65 units per tube S (TA) Surface mount lead form + TA tape & reel option 1000 units per reel S (TB) Surface mount lead form + TB tape & reel option 1000 units per reel S1 (TA) Surface mount lead form (low profile) + TA tape & reel option 1000 units per reel S1 (TB) Surface mount lead form (low profile) + TB tape & reel option 1000 units per reelPackage Dimension (Dimensions in mm) Standard DIP TypeOption M TypeOption S TypeOption S1 TypeRecommended pad layout for surface mount leadformDevice MarkingNotesEL denotes Everlight4N33TIL113H11B1 denotes Part NumberY denotes 1 digit Year codeWW denotes 2 digit Week codeV denotes VDE safety (optional)EL4N33YWWVELH11B1YWWVELTIL113YWWV11DPC-0000021 Rev. 2Tape & Reel Packing SpecificationsTape dimensionsDimension No. A B Do D1 E F Dimension(mm) 10.4±0.1 7.5±0.1 1.5±0.1 1.5+0.1/-01.75±0.1 7.5±0.1 Dimension No. Po P1 P2 t W K Dimension(mm) 4.0±0.1512±0.12.0±0.10.35±0.0316.0±0.24.5±0.112Copyright © 2010, Everlight All Rights Reserved. Release Date : October 5, 2012. Issue No: DPC-0000021 Rev. 2Precautions for Use1. Soldering Condition1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow ProfileNote: Reference: IPC/JEDEC J-STD-020DPreheatTemperature min (T smin ) 150 °C Temperature max (T smax )200°CTime (T smin to T smax ) (t s )60-120 seconds Average ramp-up rate (T smax to T p )3 °C/second maxOtherLiquidus Temperature (T L )217 °C Time above Liquidus Temperature (t L ) 60-100 sec Peak Temperature (T P )260°C Time within 5 °C of Actual Peak Temperature: T P - 5°C 30 sRamp- Down Rate from Peak Temperature 6°C /second max. Time 25°C to peak temperature 8 minutes max. Reflow times 3 times.DISCLAIMER1. Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for abovespecification.2. When using this product, please observe the absolute maximum ratings and the instructions for using outlined in thesespecification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets.3. These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’treproduce or cause anyone to reproduce them without EVERLIGHT’s consent.13Rev. 2。
ITR8102亿光U型槽型光耦,红外线对射式对管,对射式光电开关
Parameter Power Dissipation at(or below) 25℃ Free Air Temperature Input Reverse Voltage Forward Current Peak Forward Current (*1) Pulse width ≦100μs, Duty cycle=1% Collector Power Dissipation Output Collector Current Collector-Emitter Voltage Emitter-Collector Voltage Operating Temperature Storage Temperature Lead Soldering Temperature (*2) (1/16 inch form body for 5 seconds) (＊1) tw=100 μsec. , T=10 msec. Parameter Forward Voltage Reverse Current Peak Wavelength View Angle Dark Current Output C-E Saturation Voltage Collect Current Transfer Rise time Characteristics Fall time Symbol VF IR λP 2θ1/2 ICEO VCE(sat) IC(ON) tr tf Symbol Pd VR IF IFP PC IC B VCEO B VECO Topr Tstg Tsol (＊2) t=5 Sec Max. 1.5 10 ----100 0.4
1
Solder Heat
亿光槽型对射式光电开关 ITR9707
亿光槽型对射式光电开关ITR9707鼠标专用光遮断器
文章出处：广州市超毅电子有限公司
光电开关(ITR)英文为PhotoInterrupter中文为光遮断器，光断续器，光电开关。
亿光光电开关也属于红外线不可见光产品，是一种小型光电元器件，它可以检测出其接收到的光强的变化。
光电开关是光学电子装置的一种，它是通过电信号与光信号互为转换，其组合了发光与受光元件，用以检查物体为目的之一种装置。
亿光代理商超毅电子在此推荐一款亿光光电开关ITR9707，是超毅电子主推产品。
在代理亿光产品中也是销售也是名列前茅的，那它有什么优势才让市场那么受欢迎呢?下面我们一起去了解下。
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亿光光电开关ITR9707结构:是款槽型对射式光电开关，由一个红外发光二极管和一个NPN型硅光电晶体管组成的光电开关,光电晶体管接收红外辐射了。
这是正常的情况。
但当对象之间有物体时,光电晶体管无法接收辐射红外线了。
亿光光电开关ITR9707参数图：
亿光光电开关ITR9707的优势：光的发射与接收距离宽(5.2mm)，能快速的响应时间，截止可见波长λP=940海里，传感度精确，PWB封装，无铅，产品符合RoHS标准。
主要应用在鼠标，复印机，开关扫描仪，软盘驱动程序，无触点开关和pc看板等上面。
亿光光电开关ITR9707尺寸图：
亿光代理商超毅电子是亿光的15年合作伙伴，拥有着丰富的亿光光电开关的市场经验，因此，如果对于槽型对射式光电开关和反射式光电开关的相关应用资料跟规格参数，可直接联系超毅，超毅电子会为您提供最专业的技术支持。
免费咨询热线：4008-800-932。
R8103规格书(中文版)
ӨJA
110
℃/W
ESD 保护（人体模式） 储存温度 结温 焊接温度（锡焊，10 秒）
ESD~150
℃
150
℃
300
℃
注：超出所列的极限参数可能导致器件的永久性损坏。以上给出的仅仅是极限范围，在这样的极限条件下工作，器件的技术指标将得不到保证，
长期在这样的工作条件下还会影响可靠性
R8103 内部集成了丰富的保护功能，包括过压保护，短路保护，逐周期电流保护，温度保护和软启动 等。
R8103 具有极低的启动电流和工作电流，可在全电压交流输入（85VAC~265VAC）或 8 到 450V 直流输入 电压内高效驱动 LED。
应用范围
LED 驱动电源。
管脚排列
数据手册 3.0 ２３５５３Ｑ６８８７２黄Ｒ１３７６０３２电５０７０
FB
前沿消隐
输 出 驱 动
COMP
图 1 R8103 功能框图
DRAIN SOURCE
CS
数据手册 3.0
-３-
2012-09
R8103 应用信息
R8103 是非隔离降压型恒流驱动器,内部集成高压 600V MOSFET,采用 DIP-8 封装,LED 电流可以输 出高达 350mA;R8103 采用谷底开关模式,自适应电感感量和输出电压的变化,只需要很少的外围器件 来实现恒流驱动 LED。
输出开(短)路保护
R8103 内部集成了输出开(短)路保护 , R8103 一旦检测到输出开(短)路,系统会自动进入打嗝模式, 直到开(短)路保护条件除去。
过热保护
R8103 内部集成了过热保护功能,触发过热保护温度为典型 140℃,当 R8103 被触发过热保护后, 芯片只有降到 120℃之后,才能重新正常工作。
详解光耦EL817的重要参数
详解光耦EL817的重要参数详解光耦EL817的重要参数——CTR值 CTR:发光管的电流和光敏三极管的电流比的最小值。
隔离电压:发光管和光敏三极管的隔离电压的最小值。
光耦的技术参数主要有发光二极管正向压降VF、正向电流IF、电流传输比CTR、输入级与输出级之间的绝缘电阻、集电极-发射极反向击穿电压V(BR)CEO、集电极-发射极饱和压降VCE(sat)。
此外，在传输数字信号时还需考虑上升时间、下降时间、延迟时间和存储时间等参数。
集电极-发射极电压:集电极-发射极之间的耐压值的最小值光耦什么时候导通?什么时候截至?普通光耦合器的CTR-IF特性曲线呈非线性，在IF较小时的非线性失真尤为严重，因此它不适合传输模拟信号。
线性光耦合器的CTR-IF特性曲线具有良好的线性度，特别是在传输小信号时，其交流电流传输比(ΔCTR=ΔIC/ΔIF)很接近于直流电流传输比CTR值。
因此，它适合传输模拟电压或电流信号，能使输出与输入之间呈线性关系。
这是其重要特性。
电流传输比是光耦合器的重要参数，通常用直流电流传输比来表示。
当输出电压保持恒定时，它等于直流输出电流IC与直流输入电流IF的百分比。
采用一只光敏三极管的光耦合器，CTR的范围大多为20%,300%(如4N35)，而pc817则为80%,160%，台湾亿光(如EL817)可达50%,600%。
这表明欲获得同样的输出电流，后者只需较小的输入电流。
因此，CTR参数与晶体管的hFE有某种相似之处。
使用光电耦合器主要是为了提供输入电路和输出电路间的隔离，在设计电路时，必须遵循下列所选用的光电耦合器件必须符合国内和国际的有关隔离击穿电压的标准;由台湾亿光生成生产的EL817系列(如EL817B-F、EL817C-F)光耦合器，目前在国内应用地十分普遍。
鉴于此类光耦合器呈现开关特性，其线性度差，适宜传输数字信号(高、低电平)，可以用于单片机的输出隔离;所选用的光耦器件必须具有较高的耦合系数。
亿光光电开关ITR9909
+Opto Interrupter ITR9909Features․Fast response time ․High analytic․Cut-off visible wavelength λp=940nm ․High sensitivity ․Pb free․This product itself will remain within RoHS compliant versionDescription․The ITR9909 consist of an infrared emitting diode and an NPN silicon phototransistor,encased side-by-side on converging optical axis in a black thermoplastic housing,․The phototransistor receives radiation from the IR only .This is the normal situation. ․But when an object is in between , phototransistor could not receives the radiation.․For additional component information , please refer to IR and PTApplications․Mouse Copier ․Switch Scanner ․Floppy disk driver․Non-contact Switching ․For Direct Board亿光一级代理商超毅电子Device Selection GuideDevice No.ChipMaterialsLens ColorIR GaAlAs BluePT Silicon BlackAbsolute Maximum Ratings(Ta=25)Parameter Symbol Ratings Unit Power Dissipation at(or below) 25 Free AirTemperaturePd75mW Reverse Voltage V R5VForward Current I F50mA InputPeak Forward Current (*1)Pulse width100μs,Duty cycle=1%I FP1ACollector Power Dissipation Pd75mWCollector Current I C50mACollector-Emitter Voltage B V CEO30V OutputEmitter-Collector Voltage B V ECO5V Operating Temperature Topr-25~+85 Storage Temperature Tstg-40~+85 Lead Soldering Temperature (*2)(1/16 inch form body for 5 seconds)Tsol260 (*1) tw=100 μsec. , T=10 msec. (*2) t=5 SecElectro-Optical Characteristics (Ta=25)ParameterSymbolMin.Typ.Max.UnitConditions --- 1.21.5I F =20mA--- 1.4 1.85IF=100mA,tp=100 s,tp/T=0.01Forward VoltageVF--- 2.64.0VIF=1A,tp=100 s,tp/T=0.01Reverse Current I R ------10μA V R =5V InputPeak Wavelength λP ---940---nm I F =20mADark C urrentI CEO ------100nA V CE =20V,Ee=0mW/cm2OutputC-E Saturation VoltageV CE (sat)------0.4VI C =2mAEe=1mW/cm 2Collect CurrentI C (ON)200------uA V CE =5V IF=20mA Rise timet r ---15---μsec TransferCharacteristics Fall timet f ---15---μsecV CE =5V,I C =1mA ,R L =1000Ω-201.0-10020107007257507758008258508759009259509751000102510500.00.2R e l a Wavelength (nm)-20402006010080Relative Radiant Intensity vs Forward Current Relative Radiant Intensity vs Angular Displacement110080007000.290010001300110100CRelative Collector Current vs. Ambient Temperature Collector Current vs. Irradiance502585751002Typical Electrical/Optical/Characteristics Curves for ITR Relative Collector Current vs DIistance Between SensorPackage DimensionNote: Tolerances unless dimensions ±0.25mmPacking Quantity Specification1.150PCS/1Bag, 5Bags/1Box2.10Boxes/1CartonNotes1.Above specification may be changed without notice. EVERLIGHT will reserve authority onmaterial change for above specification.2.When using this product, please observe the absolute maximum ratings and the instructionfor using outlined in these specification sheets. EVERLIGHT assumes no responsibility forany damage resulting from use of the product which does not comply with the absolutemaximum ratings and the instructions included in these specification sheets.3.These specification sheets include materials protected under copyright of EVERLIGHT corporation.Please don’t reproduce or cause anyone to reproduce them without EVERLIGHT’s consent.。
el3083光耦参数
el3083光耦参数el3083光耦是一种常用的光电器件，广泛应用于各种电子设备中。
它由发光二极管（LED）和光敏三极管（光电二极管）组成，通过光的转换来实现电信号的隔离和传输。
光耦的参数对于其性能和应用范围具有重要影响，下面将对el3083光耦的主要参数进行详细介绍。
1. 光耦输入电流（IF）：光耦输入电流是指光耦所需的驱动电流，通常以毫安（mA）为单位。
IF值的选择应根据具体应用需求和光耦的额定工作电流范围来确定，过小的IF值可能无法正常驱动光耦，而过大的IF值则可能导致光耦工作不稳定或损坏。
2. 光耦输出电流（IC）：光耦输出电流是指光耦输出端的电流，通常以毫安（mA）为单位。
IC值的大小取决于光耦的响应速度和驱动电流IF的大小，一般情况下，IC值越大，表示光耦的输出能力越强。
3. 光耦输入电压（VF）：光耦输入电压是指光耦的工作电压范围，通常以伏特（V）为单位。
VF值的选择应根据光耦的额定工作电压范围来确定，过小或过大的VF值可能导致光耦无法正常工作或损坏。
4. 光耦输出电压（VCE）：光耦输出电压是指光耦输出端的电压，通常以伏特（V）为单位。
VCE值的大小取决于光耦的输出电流IC和光耦的负载电阻值，一般情况下，VCE值越小，表示光耦的输出能力越强。
5. 光耦绝缘电压（VR）：光耦绝缘电压是指光耦输入端和输出端之间的绝缘电压，通常以伏特（V）为单位。
VR值的大小决定了光耦的隔离性能，一般情况下，VR值越大，表示光耦的隔离能力越强。
6. 光耦响应时间（tR、tF）：光耦响应时间是指光耦从接收到输入光信号到输出电流上升或下降到一定百分比所需的时间。
tR表示上升时间，tF表示下降时间。
光耦的响应时间越短，表示其响应速度越快。
7. 光耦工作温度范围（Tamb）：光耦工作温度范围是指光耦正常工作的环境温度范围。
Tamb值的选择应根据光耦的额定工作温度范围来确定，过高或过低的环境温度可能导致光耦无法正常工作或损坏。
光耦的应用
功能渠道8-pin DIP8-pin DIP宽体5-pin MFP（SO-5）8-pin SOP（SO-8）高速光耦每秒钟传输1M比特单通道6N1356N136EL4502ELW135ELW136ELM0452ELM0453EL0500EL0501 双通道EL2530EL2531————EL0530EL0531每秒钟传输10M比特单通道6N137EL2601EL2611ELW137ELW2601ELW2611ELM600ELM601ELM611EL0600EL0601EL0611 双通道EL2630EL2631 ————EL0630EL0631EL0661 达林顿输出300K单通道6N1386N139————亿光的高速光耦一般应用在电源上，具体应用在放点等离子，固态继电器，工业测量机，调制器，电话，空调控制板，可编程逻辑控制器等等。
电源工作渠道固态继电器（SSR）Photo TriacEL302X，EL305X，EL304X，EL306X,EL308XELM302X,ELM305X，ELM304X，ELM306X,ELM308X高速光耦应用在空调标准EL817，EL357N-G 空调机应用到的光耦驱动EL3120高速光耦应用在驱动电源标准EL357N-G，EL3H7-G 驱动器应用到的光耦高速6N136，EL0500高速光耦的应用末端设备电话交换系统so8封装晶体管末端设备电机驱动逆变器/伺服系统栅极驱动器末端设备仪表控制/工业网络缝纫机串行总线接口隔离建议的使用设备：8-Pin DIP：6N135,6N136,,EL2503 8-Pin SOP:EL0500,EL0501总线网络描述·总线接口隔离·隔离控制器和分析设备（I/O,，伺服电机，控制板，流出物处理元件）应用·工厂自动化网络（总线接口，总线，CC-LINK）建议的使用设备：5-pin SOP:ELMO452,ELMO4538-pin DIP:EL2502,EL25038-pin SOP:EL0500,EL0501数据传输框图应用：·RS485和RS-422 的隔离接口·I²C的隔离接口建议的使用设备：5-pin SOP:ELM600,ELMO601，ELM06118-pin DIP:EL2601，EL26118-pin SOP:EL0500,EL0501，EL0601,EL0611PLC输入/输出（可编程逻辑控制器）通讯（面板与面板之间）建议的使用设备：5-pin SOP:ELM601,ELM6118-pin SOP:EL0601，EL0611，EL0630，EL0631电机控制描述·电流隔离电机线和控制集成电路·电机驱动控制的高速开关应用·IPM驱动/变频驱动建议的使用设备：5-pin SOP:ELM452，ELM453 8-pin DIP:EL0452，EL0453 8-pin SOP:EL0452,EL0453筑控设备描述：·通信线路之间的隔离室控制器·电机驱动控制的高速开关应用：·数据通信·IPM驱动/变频驱动建议的使用设备：5-pin SOP:ELM452，ELM4538-pin SOP:EL0630，EL0631，EL0611。
亿光光电传感器ITR8307规格书.
Leakage Current I CEOD
μA
V CE =5V I F =20mA Rise time t r μsec Transfer Characteristics
Fall time
t f
---
20
---
μsec
V CE =2V I C =100μA R L =1KΩ
█ Rank
Packing Quantity
1. 1000Pcs/1Bag
2. 1Bag/1Carton
Technical Data Sheet OPTO INTERRUPTER ITR █ Recommended Method of Storage use: Shelf life in sealed bag: 12 months at < 40 °C and < 90% relative humidity (RH After bag is opened, devices that will be subjected to reflow solder or other high temperature process must a Mounted within 72 hours of factory conditions < 30 °C/60%RH, or b Stored at <20% RH Devices require bake, before mounting, if: Humidity Indicator Card is > 20% when read at 23 ± 5 °C If baking is required, devices may be baked: a 192 hours at 40℃,and <5% RH(dry air/nitrogen or b 96 hours at 60℃,and <5% RH for all device containers c 24 hours at 125 °C ITR8307 The following are general recommendations for moisture sensitive level (MSL 4 storage and EVERLIGHT ELECTRONICS CO., LTD. Office: No 25, Lane 76, Sec 3, Chung Yang Rd, Tucheng, Taipei 236, Taiwan, R.O.C Tel: 886-2-2267-2000, 2267-9936 Fax: 886-2267-6244, 2267-6189, 2267-6306 http:\\ Everlight Electronics Co., Ltd. Device No：DRX-083-025 http:\\ Prepared date:2006/12/22 Rev 4 Page: 11 of 11 Prepared by: Ming-jing Lee
亿光的光耦el817的工作寿命评估方式
亿光的光耦el817的工作寿命评估方式光耦是一种将输入光信号和输出电信号进行电光转换的器件，广泛应用于各种电子设备中。
其中，亿光的光耦型号el817是一种常用的光耦产品。
在评估el817的工作寿命时，可以考虑以下几个方面：光电转换性能、环境因素、温度、电器荷电量、加电击波和终端压力。
首先，光电转换性能是评估el817工作寿命的重要指标之一。
光电转换性能包括光耦的转换速度、滞后时间和线性度等方面。
在实际应用中，光耦的转换速度要求越高，生命周期就越短。
因此，使用el817作为光耦时，需要根据具体需求选择合适的型号，并根据其提供的转换速度等参数进行评估。
其次，环境因素也会对el817的工作寿命产生影响。
环境因素主要包括湿度、光照强度和尘埃等。
湿度过高会导致光耦内部元件的腐蚀，从而降低工作寿命；光照强度过高会导致光耦内部元件的老化，同样会缩短工作寿命；而尘埃对光耦的外部结构形成阻隔，影响光信号的输入和输出，进而影响光耦的转换性能和工作寿命。
此外，温度对el817的工作寿命也有重要影响。
温度过高会使光耦内部元件的粘结材料老化，导致光电转换性能下降，从而缩短工作寿命。
因此，在设计电路时，需要根据实际环境温度，选择合适的散热措施，以保证el817在合适的温度范围内工作。
同时，电器荷电量也是评估el817工作寿命的重要因素之一。
电器荷电量是指光耦元器件上积累的电荷量，过高的电器荷电量会导致静电放电现象，进而对光电转换性能和工作寿命造成不可逆的损害。
此外，加电击波也是一个重要的评估因素。
在实际应用中，电路开关和继电器的加电冲击会影响光耦的工作寿命。
因此，在电路设计中，需要考虑合适的保护电路来减小电路开关对光耦产生的冲击，从而提高工作寿命。
最后，终端压力也是影响el817工作寿命的因素之一。
终端压力过大，会使光耦内部元件的结构变形，进而影响光电转换性能和工作寿命。
因此，在应用中需要注意处理好终端压力，避免对光耦造成不可逆的损害。
亿光EL817C光耦
Technical Data Sheet PhotocouplerEL817 Series Features:• Current transfer ratio(CTR:MIN.50% at IF =5mA ,VCE =5V) • High isolation voltage between input and output (Viso=5000 V rms ) • Compact dual-in-line package EL817*:1-channel type • Pb free• UL approved (No. E214129) • VDE approved (No. 132249)• SEMKO approved (No. 0143133/01-03) • NEMKO approved (No. P0*******) • DEMKO approved (No. 310352-04) • FIMKO approved (No. FI 16763A2) • CSA approved (No. 1143601) • BSI approved (No. 8592 / 8593)• Options available:- Leads with 0.4”(10.16mm) spacing (M Type) - Leads bends for surface mounting (S Type)- Tape and Reel of Type Ⅰ for SMD(Add”-TA” Suffix) - Tape and Reel of Type Ⅱ for SMD(Add”-TB” Suffix) - The tape is 16mm and is wound on a 33cm reelDescriptionThe EL817 series contains a infrared emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option.Applications• Computer terminals• System appliances, measuring instruments• Registers, copiers, automatic vending machines • Cassette type recorder• Electric home appliances, such as fan heaters, etc.• Signal transmission between circuits of different potentialsandimpedancesPhotocouplerEL817 Series Device Selection GuideChip MaterialPart. No.IR PTEL817* GaAs SiliconPhotocouplerEL817 Series2. Factory code shall be marked (T: Taiwan / C: China)3. Year date code4. 2-digit work week5. All dimensions are in millimeters6. Specifications are subject to change without noticeTechnical Data Sheet PhotocouplerEL817 SeriesAbsolute Maximum Ratings ( Ta=25°C )Parameter Symbol Rating UnitForward CurrentI F 50 mA Input Reverse Voltage V R 6 V Power Dissipation P 70mWCollector Power DissipationP C 150 mW Output Collector CurrentI C 50mA Collector-Emitter Voltage V CEO 35 V Emitter-Collector Voltage V ECO 6V Total Power DissipationPtot 200 mW＊1Isolation VoltageViso 5000 V rmsOperating Temperature Topr -55~+110 °CStorage TemperatureTstg -55~+125 °C＊2Soldering TemperatureTsol 260 °C*1 AC for 1 minute, R.H= 40~ 60%RH-Isolation voltage shall be measured using the following method.) (1) Short between anode and cathode on the primary side and ) between collector, emitter and base on the secondary side. ) (2) The isolation voltage tester with zero-cross circuit shall be used. ) (3) The waveform of applied voltage shall be a sine wave *2 For 10 secondsTechnical Data Sheet PhotocouplerEL817 SeriesElectro-Optical Characteristics (Ta=25°C)Parameter Symbol Min. Typ. Max. Unit ConditionForwardV F - 1.2 1.4 V I F =20mA ReverseCurrent IR - - 10 uAV R =4VInputTerminal Ct - 30 250 pF V=0,f=1kHz Collector Dark currentI CEO - - 100 nAV CE =20VOutputCollector- Emitter breakdown voltage BV CEO 35 - - V Ic=0.1mACurrent Transfer ratio CTR 50-600 % I F =5mA ,V CE =5VCollector- Emitter saturation voltageV CE(sat) - 0.1 0.2 V I F =20mA ,Ic=1 mAIsolationresistanceR ISO5×10101011 - ΩDC500V,40~60%R.HFloation capacitance Cf - 0.6 1.0 pF V=0, f=1MHz Cut-off frequency fc - 80 - kHz V CE =5V, I C =2 mA R L =100Ω, -3dBRise time t r - 4 18 us TransferCharacteristicsFall timet f - 3 18 usV CE =2VI C =2mA,R L =100ΩPhotocouplerEL817 Series SupplementTechnical Data Sheet PhotocouplerEL817 SeriesRELIABILITY PLANThe reliability of products shall be satisfied with items listed below.Confidence level : 90 % , LTPD : 10 %ClassificationTest ItemDescription & Condition(Acc.) SampleFailure CriteriaReference StandardOperation Life * Ta = 25 ± 3°C IR: If = 50 mAPt: Pc = 130 mW ( Vf=1.4v) , 1000 hrs0 / 22MIL-S-750 : 1026 MIL-S-883 : 1005JIS C 7021 : B-1High Temperature / High Humidity Reverse Bias (H3TRB)Ta = 85 ± 3°C , Humi. = 85 % rh Pt: 80% * Vce (max rating) , 1000 hrs0 / 22 JIS C 7021 : B-11High TemperatureReverse Bias (HTRB) Ta = 105 ± 3°CPt: 100% * Vce (Max rating) ,1000 hrs0 / 22JIS C 7021 : B-8Low Temperature Storage Ta = -50 ± 3°C, 1000 hrs 0 / 22JIS C 7021 : B-12High Temperature Storage Ta = 125 ± 3°C , 1000 hrs0 / 22 JIS C 7021 : B-10 MIL-S-883 : 1008Endurance testAuto claveP = 15 PSIG , Ta = 121 °C , Humi. = 100 % rh , 48 hrs0 / 22JESD 22-A102-BTemperature Cycling (Air to Air) 125°C ~ - 55 °C30 ~ 30 min , 100 cycles 0 / 22 MIL-S-883 :1010 JIS C 7021 : A-4Thermal Shock (Liquid to Liquid)125 ~ - 55°C t (dwell) = 5 mint (trans.) = 10 sec , 100 cycles0 / 22 MIL-S-202 : 107D MIL-S-750 : 1051 MIL-S-883 :1011Solder ResistanceTa = 260 ± 3°C t (dwell) = 10 ± 1 sec0 / 22 MIL-S-750 : 2031 JIS C 7021 : A-1Environmental TestSolder AbilityTa = 230 ± 3 °C t (dwell) = 5 ± 1 sec0 / 22CTR shift > 1.2Vf > U* 1.0 Ir > U * 1.0 Vce(sat) >U*1.0Bvceo < L*1.0 Bveco < L*1.0L :Low Spec.LimitU : Up Spec. LimitMIL-S-883 : 2003 JIS C 7021 : A-2Technical Data SheetPhotocouplerEL817 Series2. 25 Tubes / Inner Carton3. 12 Inner Cartons / Outside CartonTechnical Data Sheet Photocoupler-11-。
光敏种类都有哪些,光敏生产厂家有哪些
光敏种类都有哪些？光敏生产厂家有哪些？光敏种类主要包括以下类别：光敏的主要生产厂家有以下这些：1、深圳市鑫永诚光电（深圳）科技有限公司主营：光敏2、鑫永诚光电科技有限公司主营：光敏3、鑫永诚光电科技（深圳）有限公司主营：光敏4、广州市正悦电子科技有限公司主营：光敏二极管贴片红外对管5、东莞市益鸿文具有限公司主营：光敏印章高档印章盖印次数多6、株洲三丰光电高科实业有限公司主营：株洲室内照明LED雷达感应吸顶灯7、惠州市百家创新技术有限公司主营：光敏传感器生产工艺制备方法专利8、广州市曙吉光电科技有限公司主营：广州光敏二极管厂家9、深圳市奥普达光电技术有限公司主营：光敏草坪灯10、深圳市世俊科技有限公司主营：深圳供应FORM1光敏树脂盒11、广州市光晖电子有限公司主营：原装现货亿光贴片光敏接收管12、宁波大大防腐材料技术有限公司主营：光敏固化玻璃钢保护套预浸带13、上海喜润化学工业有限公司主营：光敏生物素,0.25mg,上海发14、厦门友昇工贸有限公司主营：光敏管15、沃德一佳科技有限公司主营：厂家热销供应5mm光敏电阻16、汕头协勤文具有限公司上海分公司主营：通用光敏印组合装17、北京速达印章公司主营：光敏印章18、东莞市印达印章材料有限公司主营：印德美YH水晶柄圆形光敏印章材料19、深圳市晶创和立科技有限公司主营：光敏电阻套管20、深圳鑫永诚光电科技有限公司主营：光敏接收管光控蜡烛灯上专用因篇幅限制以及信息时效性原因，仅仅只上传前面的一部分排名靠前的光敏知名企业。
需要查看更多新的完整光敏商家信息，请登陆一呼百应网进行搜索查阅。
点击光敏查阅/p/B9E2C3F4.html出师表两汉：诸葛亮先帝创业未半而中道崩殂，今天下三分，益州疲弊，此诚危急存亡之秋也。
然侍卫之臣不懈于内，忠志之士忘身于外者，盖追先帝之殊遇，欲报之于陛下也。
诚宜开张圣听，以光先帝遗德，恢弘志士之气，不宜妄自菲薄，引喻失义，以塞忠谏之路也。
ISL8103资料
REF0
ENLL 37
REF1
OVP
40 3PH 2PH DAC REF OFST VCC COMP FB VDIFF RGND 1 2 3 4 5 6 3 Pinout
ISL8103 (6x6 QFN) TOP VIEW
UGATE1 31 30 29 28 27 41 GND 26 25 24 23 22 21 11 VSEN 12 OCSET 13 ICOMP 14 DROOP 15 ISUM 16 IREF 17 LGATE3 18 PVCC3 19 ISEN3 20 UGATE3 BOOT1 PHASE1 PHASE2 UGATE2 BOOT2 ISEN2 PVCC2 LGATE2 PHASE3 BOOT3 LGATE1 PGOOD PVCC1 33 ISEN1 32
元器件交易网
®
ISL8103
Data Sheet February 15, 2006 FN9246.0
Three-Phase Buck PWM Controller with High Current Integrated MOSFET Drivers
The ISL8103 is a three-phase PWM control IC with integrated MOSFET drivers. It provides a precision voltage regulation system for multiple applications including, but not limited to, high current low voltage point-of-load converters, embedded applications and other general purpose low voltage medium to high current applications.The integration of power MOSFET drivers into the controller IC marks a departure from the separate PWM controller and driver configuration of previous multi-phase product families. By reducing the number of external parts, this integration allows for a cost and space saving power management solution. Output voltage can be programmed using the on-chip DAC or an external precision reference. A two bit code programs the DAC reference to one of 4 possible values (0.6V, 0.9V, 1.2V and 1.5V). A unity gain, differential amplifier is provided for remote voltage sensing, compensating for any potential difference between remote and local grounds. The output voltage can also be offset through the use of single external resistor. An optional droop function is also implemented and can be disabled for applications having less stringent output voltage variation requirements or experiencing less severe step loads. A unique feature of the ISL8103 is the combined use of both DCR and rDS(ON) current sensing. Load line voltage positioning and overcurrent protection are accomplished through continuous inductor DCR current sensing, while rDS(ON) current sensing is used for accurate channel-current balance. Using both methods of current sampling utilizes the best advantages of each technique. Protection features of this controller IC include a set of sophisticated overvoltage and overcurrent protection. Overvoltage results in the converter turning the lower MOSFETs ON to clamp the rising output voltage and protect the load. An OVP output is also provided to drive an optional crowbar device. The overcurrent protection level is set through a single external resistor. Other protection features include protection against an open circuit on the remote sensing inputs. Combined, these features provide advanced protection for the output load.
Kurth Electronic KE8x00 光源操作手册说明书
KE8100 KE8200 Optical light sourceWarningThe laser could injure your eyes, never look directly at the laser out-put or the connected optical fibre. Do not install fibres while the light source is active and make sure that your eyes are protected at all times.PreparationInsert two AA alkaline batteries into the battery compartment on the back of the device. To do this, remove the drop protection.UsageThe two light sources KE8100 and KE8200 with their stabilized laser diodes support different wavelengths (KE8100: 850 and 1300 nm; KE8200: 1310, 1490 and 1550 nm), the precise identification of fibres, the determination of fibre attenuation and thus the assurance of sufficient transmission quality. They provide high-quality laser light for testing in field and laboratory applica-tions. The robust casing, the large LCD display with backlight and the simple operation make the handy KE8100 and KE8200 light sources ideal tools for your daily testing tasks. Due to the stabilization of the output power and the different wavelengths, the laser light sources are indispensable for optical network installations as well as for troubleshooting and maintenance in LAN/ WAN, Enterprise, Carrier Ethernet, FTTx, PON and telecom wide area net-works. In combination with the KE8000 optical level meter, optical losses can be easily determined and the attenuation behavior of optical fibres evaluated. At a glanceHandy and easy to useFor multimode or singlemode fibresContinuous light and pulsating modeHigh stabilityAutomatic switch-off function after 10 minutesLarge LCD shows all values at a glanceBattery charge indicatorOperation1. ON / OFFPress the ON button for 2 seconds to turn on the light source. The display will show the wavelength, battery level and modulation frequency. By default, the device is set to the wavelengths 1310 nm (KE8200), 850 nm (KE8100) and DC light (0 Hz). Press the OFF button for 2 seconds to turn off the unit. The symbol in the lower left corner of the display indicates that the auto-off function is active and that the unit switches off 10 minutes after the last key was pressed. Briefly pressing the OFF key switches off the auto-off function, pressing the OFF key again reactivates the auto-off function.2. Wavelength selectionPressing the λ button allows you to select the wavelength. The selected wa-velength is shown in the centre of the LCD display.3. Modulation outputPressing the Mode button allows the selection of the different laser light mo-dulations. The following options can be selected:0 Hz ( DC ), 270 Hz, 330 Hz, 1 kHz and 2 kHz. The selected modulation frequency is automatically detected by the KE8000 Optical Power Meter and the measured value is displayed correctly. The selected modulation is shown in the upper right corner of the display.4. Backlight on / offPressing the button turns the LCD backlight on or off. However, if the backlight is turned off, it will be turned on for 8 seconds each time the key is pressed.5. Battery charge status6. MeasurementThe measurement is usually carried out in combination with the KE8000 Op-tical Power Meter. Please compare the explanations in the corresponding operating instructions or on the following pages.Performing optical power measurementsScrew the appropriate SC, FC or ST interchangeable measuring adapter onto the measuring connection of the KE8000. Among the measuring ad-apters there is a built-in 2.5 mm universal measuring adapter ferrule, which can also be used for measurements without an additional measuring adapter. Switch on the level meter with the ON / OFF button. If the input of the power meter is covered by the dust cap, ‘L0‘ appears in the display. The power me-ter is now ready to measure and there is currently no signal level.Now use the wavelength button (λ) to select the desired wavelength. Remo-ve the dust protection cap and connect the power meter to the object to be measured.By default, the power Meter displays the dBm value of the optical signal level. System power level or absolute power level measurementConnect the KE8000 level meter directly or via an optical measuring cable to your test object.For system power level measurements, the absolute power level is measu-red in dBm. System power levels can, for example, be measured directly at the transmitter output Tx of an optical transmission system. Likewise, all types of optical connections can be checked to see whether an optical signal level is emitted.Attenuation or relative power level measurementThe relative power level is measured in dB for attenuation measurements of fibre lines or optical components (e.g. connectors).This measurement is carried out in two steps and is performed with at least one additional optical measuring cable and a stabilized light source, e.g. KE8100 or KE8200.Measuring step 1 – Reference measurementConnect the light source and the levelmeter KE8000 with a high-quality opticalmeasuring cable.The power meter now displays a measu-red value in dBm, which corresponds tothe level of the light source (level trans-mitter) minus the attenuation of the mea-suring cable and the insertion loss of theplug at the light source itself.Now press the REF key to set this levelvalue as the reference value. Measuring step 2 – Attenuation measurementNow disconnect the measuring cablefrom the power meter and connect theopen end via a coupling, e.g. to the fibresection to be measured. The other endof the fibre path is now connected to thelevel meter. Make sure that the connec-tion at the power level transmitter is notdetached or altered.The power meter now displays a relati-ve power level in dB. This value corres-ponds to the attenuation of the fibre pathplus the insertion loss of the connector(coupling).Last revision: 09 / 2018。
亿光直插光耦ELT3081
亿光直插光耦ELT30814PIN DIP ZERO-CROSS TRIAC DRIVER PHOTOCOUPLER ELT304X, ELT306X, ELT308X SeriesFeatures:Peak breakdown voltage -400V: ELT304X -600V: ELT306X -800V: ELT308XHigh isolation voltage between input and output (Viso=5000 V rms )Zero voltage crossingPb free and RoHS compliant.UL and cUL approved(No. E214129) VDE approved (No.40028391) SEMKO approved NEMKO approved DEMKO approved FIMKO approvedDescriptionThe ELT304X, ELT306X and ELT308X series of devices each consist of a GaAs infrared emitting diode optically coupled to a monolithic silicon zero voltage crossing photo triac.They are designed for use with a discrete power triac in the interface of logic systems to equipment powered from 110 to 380 VAC lines,such as solid-state relays, industrial controls, motors, solenoids and consumer appliances.Applications●Solenoid/valve controls ●Light controls●Static power switch ●AC motor drivers ●E.M. contactors●Temperature controls ●AC Motor startersSchematicPin Configuration 1. Anode 2. Cathode 3. Terminal 4. TerminalAbsolute Maximum Ratings (Ta=25 )Parameter Symbol Rating Unit Input Forward current I F60mA Reverse voltage V R6VPower dissipation P D100mWOutputOff-state OutputTerminal Voltage ELT304XV DRM400V ELT306X600ELT308X800Peak Repetitive Surge Current I TSM1APower dissipation P C300mW Total power dissipation P TOT330mW Isolation voltage*1V ISO5000Vrms Operating temperature T OPR-55 to 100 Storage temperature T STG-55 to 125 Soldering Temperature*2T SOL260 Notes:*1AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1& 2 are shorted together, and pins3 & 4are shorted together. *2 For 10 secondsElectro-Optical Characteristics (Ta=25 unless specified otherwise)InputParameter Symbol Min.Typ.*Max.Unit Condition Forward Voltage V F-- 1.5V I F=30mA Reverse Leakage current I R--10µA V R=6V OutputParameter Symbol Min.Typ.*Max.Unit ConditionPeak Blocking Current ELT304XI DRM--100nA V DRM = Rated V DRMI F=0mAELT306XELT308X500Peak On-state Voltage V TM--3V I TM=100mA peak, I F=Rated I FTCritical Rate of Rise off-state Voltage ELT304XELT306Xdv/dt1000--V/µsV PEAK=Rated V DRM,I F=0 (Fig. 10)ELT308X600--Inhibit Voltage (MT1-MT2voltage above which devicewill not trigger)V INH--20V I F= Rated I FTLeakage in lnhibited State I DRM2--500µA I F= Rated I FT,V DRM=Rated V DRM, off stateTransfer CharacteristicsParameter Symbol Min.Typ.*Max.Unit ConditionLED Trigger Current ELT3041ELT3061ELT3081I FT--15mA Main terminal Voltage=3V ELT3042ELT3062ELT3082--10ELT3043ELT3063ELT3083--5Holding Current I H-280-µA * Typical values at T a= 25°CTypical Electro-Optical Characteristics CurvesFigure 10. Static dv/dt Test Circuit & WaveformMeasurement MethodThe high voltage pulse is set to the required V PEAK value and applied to the D.U.T. output side through the RC circuit above. LED current is not applied. The waveform V T is monitored using a x100 scope probe. By varying R TEST , the dv/dt (slope) is increased, until the D.U.T. is observed to trigger (waveform collapses). The dv/dt is then decreased until the D.U.T. stops triggering. At this point,τRC is recorded and the dv/dt calculated.For example, V PEAK = 600V for ELT306X series. The dv/dt value is calculated as follows:V PEAKApplied V T WaveformτRC0.632 x V PEAK0.63 x 600τRCdv/dt = = 378τRC0.632 x V PEAK τRCdv/dt =50 ?10 k ?D.U.T.R TESTHigh Voltage Pulse SourceC TEST V TA KT1T2Zero Crossing CircuitOrder InformationPart NumberELT304X(Y)(Z)-Vor ELT306X(Y)(Z)-Vor ELT308X(Y)(Z)-VNoteNoteX = Part No. (1, 2, or 3)Y = Lead form option (S, S1, M or none)Z = Tape and reel option (TA, TB, TU,TD or none).V=VDE safety approved optionOption Description Packing quantity None Standard DIP-4100units per tube M Wide lead bend(0.4 inch spacing)100units per tube S(TA)Surface mount lead form+ TA tape & reel option1000units per reel S(TB)Surface mount lead form+ TB tape & reel option1000units per reel S1(TA)Surface mount lead form (low profile) + TA tape & reel option1000 units per reel S1(TB)Surface mount lead form (low profile) + TB tape & reel option1000 units per reel S (TU)Surface mount lead form + TU tape & reel option1500units per reel S(TD)Surface mount lead form + TD tape & reel option1500units per reelS1(TU)Surface mount lead form (low profile) + TU tape & reel option1500units per reel S1(TD)Surface mount lead form (low profile) + TD tape & reel option1500 units per reelPackage Dimension(Dimensions in mm) Standard DIP TypeOption M TypeOption S TypeOption S1 TypeRecommended pad layout for surface mount leadformDevice MarkingNotes EL denotes EverlightT3083denotes Device Number Y denotes 1 digit Year code WWdenotes 2 digit Week code Vdenotes VDE optionT3083EL YWW VTape dimensionsDimension No.Po P1P2t W K Dimension(mm) 4.0±0.112.0±0.1 2.0±0.10.35±0.116.0±0.3 4.75±0.1Tape dimensionsDimension No.A B C D EF Dimension(mm)16.00±0.37.5±0.1 1.75±0.18.0±0.1 2.0±0.1 4.0±0.1Dimension No.G H I J K L Dimension(mm)1.55±0.0510.4±0.10.4±0.054.60±0.15.1±0.11.55±0.05Precautions for Use1. Soldering Condition1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow ProfileNote: Reference: IPC/JEDEC J-STD-020DPreheatTemperature min (T smin) 150 °CTemperature max (T smax)200°CTime (T smin to T smax) (t s)60-120 secondsAverage ramp-up rate (T smax to T p) 3 °C/second maxOtherLiquidus Temperature (T L)217 °CTime above Liquidus Temperature (t L)60-100 secPeak Temperature (T P) 260°CTime within 5 °C of Actual Peak Temperature: T P-5°C 30 sRamp-Down Rate from Peak Temperature 6°C /second max.Time 25°C to peak temperature8 minutes max.Reflow times 3 times.DISCLAIMER1.Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for abovespecification.2.When using this product, please observe the absolute maximum ratings and the instructions for using outlined in thesespecification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets.3.These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’treproduce or cause anyone to reproduce them without EVERLIGHT’s consent.。
亿光光耦EL357N-G
4 PIN SOP PHOTOTRANSISTOR PHOTOCOUPLER EL357N-G SeriesFeatures:•Halogens free(Br <900 ppm ,Cl <900 ppm , Br+Cl < 1500 ppm)•Current transfer ratio(CTR: 50~600% at I F =5mA,V CE =5V)•High isolation voltage between input and output (Viso=3750 V rms )•Compact 4 Pin SOP with a 2.0 mm profile •Compliance with EU REACH •Pb free and RoHS compliant•UL and cUL approved (No. E214129)•VDE approved (No. 132249)• SEMKO approved • NEMKO approved • DEMKO approved •FIMKO approvedDescriptionThe EL357N-G series contains an infrared emitting diode, optically coupled to a phototransistor detector.The devices in a 4-pin small outline SMD package.Applications•DC-DC Converters• Programmable controllers• Telecommunication equipments• Signal transmission between circuits of different potentials and impedancesSchematicPin Configuration 1. Anode 2. Cathode 3. Emitter 4. Collector亿光一级代理商超毅电子Absolute Maximum Ratings (Ta=25 )Parameter Symbol Rating UnitInput Forward current I F50mA Peak forward current (1us, pulse)I FP1A Reverse voltage V R6V Power dissipationDerating factor (about Ta=100°C)P D70mW2.9mW/COutput Power dissipationDerating factor (above T a = 70 C)P C150mW3.7mW/°C Collector current I C50mA Collector-Emitter voltage V CEO80V Emitter-Collector voltage V ECO7VTotal Power Dissipation P TOT200mW Isolation Voltage*1V ISO3750V rms Operating temperature T OPR-55~+110°C Storage temperature T STG-55~+125°C Soldering Temperature*2T SOL260°C Notes:*1AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1, 2 are shorted together, and pins 3, 4 are shorted together. *2 For 10 secondsElectro-Optical Characteristics (Ta=25 unless specified otherwise)InputParameter Symbol Min.Typ.Max.Unit Condition Forward voltage V F- 1.2 1.4V I F=20mA Reverse current I R--10µA V R= 4V Input capacitance C in-30250pF V=0,f=1kHz OutputParameter Symbol Min Typ.Max.Unit Condition Collector-Emitter darkcurrentI CEO--100nA V CE=20V, I F= 0mA Collector-Emitterbreakdown voltage BV CEO80--V I C=0.1mA Emitter-Collectorbreakdown voltageBV ECO7--V I E=0.01mA Transfer Characteristics(T a=25°C unless specified otherwise)Parameter Symbol Min Typ.Max.Unit ConditionCurrent Transfer ratio EL357NCTR50-600%I F=5mA ,V CE=5V EL357NA80-160EL357NB130-260EL357NC200-400EL357ND300-600EL357NE100-200EL357NF150-300Collector-Emittersaturation voltageV CE(sat)-0.10.2V I F =20mA ,I C=1mAIsolation resistance R IO5×1010--ΩV IO= 500Vdc, 40~60% R.H.Floating capacitance C IO-0.6 1.0pF V IO=0, f=1MHzRise time t r-318µs V CE=2V, I C=2mA, R L=100ΩFall time t f-418 * Typical values at T a= 25°CTypical Electro-Optical Characteristics CurvesFigure 10. Switching Time Test Circuit & WaveformsI C R LV CCOutputInput PulseOutput Pulse10%90%t f t r t offt onOrder InformationPart NumberEL357N(X)(Y)-VGNoteX= CTR Rank(A, B, C, D, E, For none)Y= Tape and reel option (TA, TB or none).V= VDE (option)G= Halogen freeOption Description Packing quantity None Standard SMD option100units per tube -V Standard SMD option + VDE100units per tube (TA)TA Tape & reel option3000units per reel (TB)TB Tape & reel option3000units per reel (TA)-V TA Tape & reel option+ VDE3000units per reel (TB)-V TB Tape & reel option+ VDE3000units per reelPackage Dimension(Dimensions in mm)Recommended pad layout for surface mount leadformDevice MarkingEL357NRYWWVNotesEL denotes Everlight357N denotes Device NumberR denotes CTR RankY denotes 1 digit Year codeWW denotes 2 digit Week codeV denotes VDE approved (optional)Tape & Reel Packing SpecificationsTape dimensionsDimension No.A B Do D1E F Dimension (mm) 4.4±0.17.4±0.1 1.5+ 0.1/-01.5±0.11.75±0.17.5±0.05Dimension No.Po P1P2t W K Dimension (mm)4.0±0.158.0 ±0.12.0±0.10.25±0.0316.0 ±0.22.4±0.1Direction of feed from reel Direction of feed from reelOption TAOption TBPrecautions for Use1. Soldering Condition1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow ProfileNote: Reference: IPC/JEDEC J-STD-020DPreheatTemperature min (T smin) 150 °CTemperature max (T smax)200°CTime (T smin to T smax) (t s)60-120 secondsAverage ramp-up rate (T smax to T p) 3 °C/second maxOtherLiquidus Temperature (T L)217 °CTime above Liquidus Temperature (t L)60-100 secPeak Temperature (T P) 260°CTime within 5 °C of Actual Peak Temperature: T P-5°C 30 sRamp-Down Rate from Peak Temperature 6°C /second max.Time 25°C to peak temperature8 minutes max.Reflow times 3 times.LifecyclePhase:PreliminaryLifecyclePhase:Revision : (6)Expired Period: Forever Release Date:2014-06-05 16:01:32.0DATASHEET4 PIN SOP PHOTOTRANSISTOR PHOTOCOUPLEREL357N-G series11Copyright © 2010, Everlight All Rights Reserved. Release Date : June 5, 2014. Issue No: DPC-0000014 Rev. 6DISCLAIMER1.Above specification may be changed without notice. EVERLIGHT will reserve authority on material change for abovespecification.2.When using this product, please observe the absolute maximum ratings and the instructions for using outlined in thesespecification sheets. EVERLIGHT assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute maximum ratings and the instructions included in these specification sheets.3.These specification sheets include materials protected under copyright of EVERLIGHT corporation. Please don’treproduce or cause anyone to reproduce them without EVERLIGHT’s consent.亿光一级代理商超毅电子。
亿光光电开关(对射式光耦)ITR9707规格书
Opto Interrupter 020-22074733 QQ 2462655096
█ Features
․Fast response time ․High analytic ․Cut-off visible wavelength λp=940nm ․High sensitivity ․Pb free ․This product itself will remain within RoHS compliant version
Prepared date：2009/4/14
Rev .3
Page: 5 of 8
Prepared by：huangzw
█ Typical Electrical/Optical/Characteristics Curves for PT
ITR9707
cycle
value>20%
L : -40℃ 15 min
H : +100℃ 5 min
300
3
Thermal Shock
10 sec
22 PCs
0/1
cycle
L : -10℃
5 min
4
High Temperature TEMP. : +100℃
1000 hrs 22 PCs
0/1
Storage
Everlight Electronics Co., Ltd. Device No：DRX-0000017
Prepared date：2009/4/14
Rev .3
Page: 2 of 8
Prepared by：huangzw
█ Absolute Maximum Ratings (Ta=25℃)