FDG327N中文资料

I D, DRAIN CURRENT (A) 9
TA =-55 C
o
25 C 125oC
o
VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55 C 0.01
o
6
3
0.001
0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V)
TA = 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse
f = 1MHz VGS = 0 V
4
3
2
1
0 Qg, GATE CHARGE (nC)
0
4
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W) 10
Features
• 1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V. RDS(ON) = 100 mΩ @ VGS = 2.5 V RDS(ON) = 140 mΩ @ VGS = 1.8 V • Fast switching speed • Low gate charge (4.5 nC typical) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability.
90 100 140 115
mΩ
6 9
A S
VDS = 10 V, ID = 1.5 A
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 0.32 A Voltage 0.32
(Note 2)
A V
0.75
1.2
Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
(Note 1a) (Note 1b)
300 333
°C/W °C/W
Package Marking and Ordering Information
Device Marking .27 Device FDG327N Reel Size 7’’ Tape width 8mm Quantity 3000 units
FDG327N Rev C (W)
元器件交易网
FDG327N
Typical Characteristics
16
2 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 3.0V 2.5V 2.0V 1.8 1.6 2.0V 1.4 2.5V 1.2 1 0.8
TA=25 C unless otherwise noted
o
Parameter
Ratings
20 ±8
(Note 1a)
Units
V V A W °C
1.5 6 0.42 0.38 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDG327N Rev C (W)
元器件交易网
VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω
6 6.5 14 2
12 13 29 4 6.3
ns ns ns ns nC nC nC
VDS = 10 V, ID = 1.5 A, VGS = 4.5 V
5 0.89 0.95
Drain–Source Diode Characteristics and Maximum Ratings
FDG327N
Typical Characteristics
5 VGS , GATE-SOURCE VOLTAGE (V)
600 ID = 1.5A VDS = 5V 10V 500 CAPACITANCE (pF) 15V CISS 400 300 200 COSS 100 CRSS 0
0 2 4 6
On Characteristics
VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance
ID = 0.8A 0.14
1.2
0.1 TA = 125 oC 0.06 TA = 25 C 0.02
o
1
0.8
0.6 -50 -25 0 25 50 75 100
o
125
150
1
2
3
4
5
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA
Min
20
Typ
Max Units
V
Off Characteristics
ID = 250 µA,Referenced to 25°C VDS = 16 V, VGS = 8 V, VGS = –8 V, VGS = 0 V VDS = 0 V VDS = 0 V ID = 250 µA 12 1 100 –100 mV/°C µA nA nA
a)
300°C/W when 2 mounted on a 1in pad of 2 oz copper.
b)
333°C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.18 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 1.5 A VGS = 4.5V 1.4
Applications
• DC/DC converter • Power management • Load switch
S D D G
Pin 1
1 2
D D
6 5 4
SC70-6
3
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed
VDS = 10 V, f = 1.0 MHz
V GS = 0 V
423 87 48
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge