UMB9N中文资料

!Electrical characteristic curves
−100 −50
VO=−0.3V
−10m −5m −2m
VCC=−5V
1k 500
VO=−5V Ta=100˚C 25˚C −40˚C
INPUT VOLTAGE : VI (on) (V)
OUTPUT CURRENT : Io (A)
IMB9A
(4) (5) (6) R1 R2 DTr1 R1=10kΩ R2=47kΩ (1)
IMB9A
(6)
0.3
(4)
(5)
1.6 2.o0.1
Each lead has same dimensions
!Absolute maximum ratings (Ta = 25°C)
元器件交易网
EMB9 / UMB9N / IMB9A
Transistors
General purpose (dual digital transistors)
EMB9 / UMB9N / IMB9A
!Features 1) Two DTA144Ys in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. !External dimensions (Units : mm)
−20 −10 −5 −2 −1
DC CURRENT GAIN : GI
−1m
200 100 50 20 10 5 2 1
−500µ −200µ −100µ −50µ −20µ −10µ −5µ −2µ
Ta=−40˚C 25˚C 100˚C
Ta=100˚C 25˚C −40˚C
−500m −200m −100m −100µ −200µ −500µ −1m −2m −5m −10m −20m −50m −100m
ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol : B9
mA
mW
∗1 ∗2
∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded.
(3)
(2)
(1)
Parameter Supply voltage Input voltage Symbol VCC VIN IO IC (Max.) Pd Tj Tstg Limits −50 −40 6 Output current EMB9, UMB9N Power dissipation IMB9A Junction temperature Storage temperature −70 −100 150 (TOTAL) 300 (TOTAL) 150 −55∼+150 ˚C ˚C Unit V V
Fig.2 Output current vs. input voltage (OFF characteristics)
Fig.3 DC current gain vs. output current
−1000m
lO/lI =20
−500m
OUTPUT VOLTAGE : VO (on) (V)
−200m −100m −50m −20m −10m −5m −2m −1m −100µ −200µ −500µ −1m
2.1
0.15
Each lead has same dimensions
!Equivalent circuit
EMB9 / UMB9N
(3) (2) (1) R1 R2 DTr1 R1=10kΩ R2=47kΩ DTr2 R2 R1 (4) (5) DTr2 R2 R1 (3) (2)
ROHM : UMT6 EIAJ : SC-88 Abbreviated symbol : B9
Ta=100˚C 25˚C −40˚C
−2m
−5m −10m −20m −50m−100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
EMB9
0.22
(4) (5) (6) (3) (2)
1.2 1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
1.3 0.65 0.8 1.1 0.95 0.95 1.9 2.9 0.7 0.9
0.2
(6)
1.25
0.1Min.
0to0.1
The following characteristics apply to both DTr1 and DTr2.
−1µ 0
−0.5
−1
−1.5
−2
−2.5
−3
−100µ −200µ −500µ −1m
−2m
−5m −10m −20m −50m−100m
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI (off) (V)
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current (ON characteristics)
∗
∗ Transition frequency of the device
!Packaging specifications
Package Code Type EMB9 UMB9N IMB9A Basic ordering unit (pieces) T2R 8000 Taping TR 3000 T148 3000
(1)
2.0
(5)
(2)
!Structure Epitaxial planar type PNP silicon transistor (Built-in resistor type)
Abbreviated symbol : B9
0.65
(4)
(3)
UMB9N
0.5
0.5 0.5 1.0 1.6
元器件交易网
EMB9 / UMB9N / IMB9A
Transistors
!Electrical characteristics (Ta = 25°C)
Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI (off) VI (on) VO (on) II IO (off) GI fT R1 R2 / R 1 Min. − −1.4 − − − 68 − 7 3.7 Typ. − − −0.1 − − − 250 10 4.7 Max. −0.3 − −0.3 −0.88 −0.5 − − 13 5.7 Unit V V mA µA − MHz kΩ − Conditions VCC=−5V, IO=−100µA VO=−0.3V, IO=−1mA IO/II=−5mA/−0.25mA VI=−5V VCC=−50V, VI=0V VO=−5V, IO=−5mA VCE=−10mA, IE=5mA, f=100MHz − −