DSEP29-12A;中文规格书,Datasheet资料

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DSEP12-12A中文资料

supplies (SMPS) q Inductive heating q Uninterruptible power supplies (UPS) q Ultrasonic cleaners and welders
Advantages
q Avalanche voltage rated for reliable operation
q Soft reverse recovery for low EMI/RFI
q Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch
Dimensions see outlines.pdf
Features
q International standard package q Planar passivated chips q Very short recovery time q Extremely low switching losses q Low IRM-values q Soft recovery behaviour q Epoxy meets UL 94V-0
TVJ = 25°C VR = VRRM TVJ = 150°C VR = VRRM IF = 15 A; TVJ = 150°C
TVJ = 25°C
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25°C VR = 100 V; IF = 25 A; -diF/dt = 100 A/ms TVJ = 100°C
Data according to IEC 60747 and per diode unless otherwise specified

ZHR-12(P)中文资料(jst)中文数据手册「EasyDatasheet - 矽搜」

线：AWG＃32〜＃26•适合印刷电路
板厚度：0.6至1.2mm,1.6毫米*符合RoHS.
max.
•紧凑 ,小巧设计 •外壳撞杆 •可靠接触建设 •失真性结构 •与 ZR绝缘
位移连接器
PC电路板布局和组装布局
〈通孔式（从焊接侧面观察）
顶装型
*当使用请参照"一般说明及注意事项端子和连接器",在这个目录结束.
9 B9B-ZR S9B-ZR B9B-ZR-3.4 S9B-ZR-3.4 12.0 15.0 1,000 1,000 1,000 10 B10B-ZR S10B-ZR B10B-ZR-3.4 S10B-ZR-3.4 13.5 16.5 1,000 1,000 1,000
11 B11B-ZR S11B-ZR B11B-ZR-3.4 S11B-ZR-3.4 15.0 18.0 1,000 500 500 12 B12B-ZR S12B-ZR B12B-ZR-3.4 S12B-ZR-3.4 16.5 19.5 1,000 500 500
123 5 6
As the color identification, the following alphabet shall be put in the underlined part. For availability, delivery and minimumorder quantity, contact JST. ex. ZHR-2-oo-
SZH-002T-P0.5
AP-K2N
MKS-L ―
Note: *Strip-crimp applicator.
壳
Applicator Dies
MK/SZH-002-05 ―

PVII-12中文手册(版本号070502)

P/VⅡ-12交流金属封闭开关设备使用手册安全第一：在开关设备安装使用前请先仔细阅读本使用手册：●开关设备的使用场所应符合电气设备规定的使用条件的要求。

●安装、操作和维护均需由专职电气人员完成，该人员必须接受相应的培训。

●必须保证电气设备的联锁条件和工作规程的适用和安全性。

●有关开关设备的一切操作，都要遵守手册中的相关规定。

●不要超出开关设备正常工作条件下的技术参数中规定的数值。

●手册应放于安装、操作和维护人员方便拿到的地方。

用户的专职人员应对所有影响工作安全的事项负责，并正确管理开关设备。

严禁误用及滥用，包括盗版、篡改及断章取义并提供给第三方。

对所有其它渠道获取的咨讯，本公司概不负责。

目录产品概述概述符合标准技术参数外型尺寸和重量正常使用条件产品结构结构特点外壳与隔板手车功能隔室手车室母线室电缆室低压室防误闭锁装置压力释放装置储运与安装运输交货与保管安装安装现场的一般要求基础混凝土地坪上的基础框架柜体安装母线安装电缆连接电力电缆连接控制电缆连接开关装置接地其它事项运行与维护设备运行准备工作起动调试操作断路器手车断路器接地开关负荷开关组合式过电流继电器调试注意事项检查和维护概述检查和维护时间间隔检查维护主要附件VB2真空断路器手车典型接线图1 1 1 1 1 1 2 2 2 2 3 3 3 4 4 4 4 5 5 5 5 5 6 6 7 7 7 7 7 7 7 8 8 8 8 8 8 9 9 10 10 10 10 10 11 11 11 12概述P/VⅡ-12型铠装移开式户内交流金属封闭开关设备是上海通用电气广电有限公司最新一代的户内成套配电装置。

设备适用于标称系统电压3~10kV，额定电流4000A及以下，额定频率50Hz的单母线或单母线分段三相交流户内配电系统，用于接收和分配电能，并对电路实行控制、保护及监测。

DSEE29-12CC中文资料

l Soft reverse recovery for low EMI/RFI l Low IRM reduces:
- Power dissipation within the diode - Turn-on loss in the commutating
switch
IXYS reserves the right to change limits, test conditions and dimensions. © 2001 IXYS All rights reserved
l Low cathode to tab capacitance (<15pF) l Planar passivated chips l Very short recovery time l Extremely low switching losses l Low IRM-values l Soft recovery behaviour l Epoxy meets UL 94V-0
TVJ = 25°C
IF = 1 A; -di/dt = 200 A/µs; VR = 30 V VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs TVJ = 100°C
Characteristic Values typ. max.
200
µA
2
mA
1.75
V
2.5
V
°C260Leabharlann °C165W
2500
V~
11...65 / 2.5...15 N / lb
2
g
Symbol
IRQR
VF S
RthJC RthCH trr IRM
Conditions

NCE30P12Sdatasheet-12315470206

NCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE30P12S uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications.General Features● V DS = -30V,I D = -12A R DS(ON) < 25m Ω @ V GS =-4.5V R DS(ON) < 16m Ω @ V GS =-10V● High Power and current handing capability ● Lead free product is acquired ● Surface mount packageApplication●PWM applications ●Load switch ●Power managementSchematic diagramMarking and pin assignmentSOP-8 top viewPackage Marking and Ordering InformationDevice MarkingDeviceDevice PackageReel SizeTape widthQuantity30P12 NCE30P12S SOP-8Ø330mm 12mm2500 unitsAbsolute Maximum Ratings (T A =25℃unless otherwise noted)Parameter Symbol Limit UnitDrain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 V Drain Current-ContinuousI D -12 A Drain Current-Pulsed (Note 1)I DM -48 AMaximum Power DissipationP D 3 W Operating Junction and Storage Temperature RangeT J ,T STG-55 To 150℃Thermal CharacteristicThermal Resistance,Junction-to-Ambient (Note 2)R θJA41.67/W ℃Electrical Characteristics (T A =25℃unless otherwise noted)Parameter Symbol ConditionMin Typ Max UnitOff CharacteristicsParameterSymbolConditionMin Typ MaxUnitDrain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -30 -33 - V Zero Gate Voltage Drain Current I DSS V DS =-30V,V GS =0V - - -1 μA Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V -- ±100nAOn Characteristics (Note 3) Gate Threshold VoltageV GS(th) V DS =V GS ,I D =-250μA -1 -1.5 -3 V V GS =-10V, I D =-10A - 11.5 15 m Ω Drain-Source On-State Resistance R DS(ON) V GS =-4.5V, I D =-7A - 18 25 m Ω Forward Transconductance g FSV DS =-10V,I D =-10A 20- - S Dynamic Characteristics (Note4) Input Capacitance C lss - 1750 - PF Output CapacitanceC oss - 215 - PFReverse Transfer Capacitance C rss V DS =-15V,V GS =0V,F=1.0MHz- 180 - PFSwitching Characteristics (Note 4) Turn-on Delay Time t d(on) - 9 - nSTurn-on Rise Time t r - 8 - nS Turn-Off Delay Time t d(off) - 28 - nSTurn-Off Fall Time t fV DD =-15V, ID=-10A, V GS =-10V,R GEN =1Ω - 10 - nSTotal Gate Charge Q g - 24 - nC Gate-Source Charge Q gs - 3.5 - nCGate-Drain ChargeQ gd V DS =-15V,I D =-10A,V GS =-10V - 6 - nCDrain-Source Diode Characteristics Diode Forward Voltage (Note 3)V SDV GS =0V,I S =-2A -- -1.2 VNotes:1. Repetitive Rating: Pulse width limited by maximum junction temperature.2. Surface Mounted on FR4 Board, t ≤ 10 sec.3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.4. Guaranteed by design, not subject to productionTypical Electrical and Thermal CharacteristicsFigure 1:Switching Test CircuitT J -Junction Temperature(℃)Figure 3 Power DissipationVds Drain-Source Voltage (V)Figure 5 Output CharacteristicsV INV tFigure 2:Switching WaveformsT J -Junction Temperature(℃)Figure 4 Drain CurrentI D - Drain Current (A)Figure 6 Drain-Source On-ResistanceP D P o w e r (W )I D - D r a i n C u r r e n t (A ）R d s o n O n -R e s i s t a n c e (m Ω)I D - D r a i n C u r r e n t (A )Vgs Gate-Source Voltage (V)Figure 7 Transfer CharacteristicsVgs Gate-Source Voltage (V)Figure 9 Rdson vs VgsQg Gate Charge (nC)Figure 11 Gate ChargeT J -Junction Temperature(℃)Figure 8 Drain-Source On-ResistanceVds Drain-Source Voltage (V)Figure 10 Capacitance vs VdsVsd Source-Drain Voltage (V)Figure 12 Source- Drain Diode ForwardI D - D r a i n C u r r e n t (A )R d s o n O n -R e s i s t a n c e (m Ω)V g s G a t e -S o u r c e V o l t a g e (V )N o r m a l i z e d O n -R e s i s t a n c eC C a p a c i t a n c e (p F ) I s - R e v e r s eD r a i n C u r r e n t (A )Vds Drain-Source Voltage (V)Figure 13 Safe Operation AreaSquare Wave Pluse Duration(sec)Figure 14 Normalized Maximum Transient Thermal Impedancer (t ),N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c eI D - D r a i n C u r r e n t (A )SOP-8 Package InformationDimensions In Millimeters Dimensions In Inches SymbolMin.Max.Min.Max.A 1.350 1.750 0.053 0.069A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061b 0.330 0.510 0.013 0.020c 0.170 0.250 0.006 0.010D 4.700 5.100 0.185 0.200E 3.800 4.000 0.150 0.157E1 5.800 6.200 0.228 0.244e 1.270(BSC) 0.050(BSC)L 0.400 1.270 0.016 0.050 θ0 8 0 8NCE30P12SAttention■ Any and all NCE power products described or contained herein do not have specifications that can handle applications thatrequire extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your NCE power representative nearest you before using any NCE power products described or contained herein in such applications.■ NCE power assumes no responsibility for equipment failures that result from using products at valuesthat exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all NCE power products described or contained herein.■ Specifications of any and all NCE power products described or contained herein stipulate the performance, characteristics,and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.■ NCE power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and allsemiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.■ In the event that any or all NCE power products(including technical data, services) described or contained herein arecontrolled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, includingphotocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of NCE power Semiconductor CO.,LTD.■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volumeproduction. NCE power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.■ Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the NCE power product that you intend to use.■ This catalog provides information as of Sep.2010. Specifications and information herein are subject to change without notice.。

UPC29M33A中文资料

FEATURES • Output current in excess of 0.5 A • Low dropout voltage VDIF = 0.5 V TYP. (at IO = 0.5 A) • On-chip overcurrent and thermal protection circuit • On-chip output transistor safe area protection circuit
Output Voltage 3.3 V
3.3 V 3.3 V 3.3 V
µ PC29M33AT -E2
MP-3Z (SC-63)
3.3 V
µ PC29M33AT -T1
MP-3Z (SC-63)
3.3 V
µ PC29M33AT -T2
MP-3Z (SC-63)
3.3 V
µ PC29M05AHF
µ PC29M05AHB µ PC29M05AT µ PC2905AT-E1
MP-45G (Isolated TO-220)
MP-3 (SC-64) MP-3Z (SC-63) MP-3Z (SC-63)
5.0 V
5.0 V 5.0 V 5.0 V
µ PC2905A0 V
µ PC2905AT-T1
MP-3Z (SC-63)
5.0 V
µ PC2905AT-T2
STANDARD CONNECTION
D1
INPUT CIN
PC29M33A, PC29M05A
+ COUT
OUTPUT D2
CIN: 0.1 µF or higher. Set this value according to the length of the line between the regulator and INPUT pin. Be sure to connect CIN to prevent parasitic oscillation. Use of a film capacitor or other capacitor with excellent voltage and temperature characteristics is recommended. If using a laminated ceramic capacitor, it is necessary to ensure that CIN is 0.1 µF or higher for the voltage and temperature range to be used.

FDMS3664S;中文规格书,Datasheet资料

FDMS3664S PowerTrench ® Power StageFDMS3664S Rev.C1MOSFET Maximum Ratings = 25 °C unless otherwise notedG1D1D1D1G2S2S2S2D1PHASE (S1/D2)TopBottom® Power Stage©2011 Fairchild Semiconductor Corporation FDMS3664S Rev.C1 2On Characteristics Dynamic Characteristics Switching Characteristics V GS = 12 V, V DS= 0 V Q2100nAV GS(th)Gate to Source Threshold Voltage V GS = V DS, I D = 250 μAV GS = V DS, I D = 1 mAQ1Q21.11.11.91.62.72.2VΔV GS(th) ΔT J Gate to Source Threshold VoltageTemperature CoefficientI D = 250 μA, referenced to 25 °CI D = 10 mA, referenced to 25 °CQ1Q2-6-3mV/°Cr DS(on)Drain to Source On Resistance V GS = 10 V, I D = 13 AV GS = 4.5 V, I D = 11 AV GS = 10 V, I D = 13 A , T J = 125 °CQ1465.78118.7mΩV GS = 10 V, I D = 25 AV GS = 4.5 V, I D = 22 AV GS = 10 V, I D = 25 A , T J = 125 °CQ22.02.52.92.63.24.5g FS Forward Transconductance V DS = 5 V, I D = 13 AV DS = 5 V, I D = 25 AQ1Q262179SC iss Input Capacitance Q1:V DS = 15 V, V GS = 0 V, f = 1 MHZQ2:V DS = 15 V, V GS = 0 V, f = 1 MHZ Q1Q21325251517653345pFC oss Output Capacitance Q1Q2466645620860pFC rss Reverse Transfer Capacitance Q1Q2467470115pFR g Gate Resistance Q1Q20.20.20.60.923Ωt d(on)Turn-On Delay TimeQ1:V DD = 15 V, I D = 13 A, R GEN = 6 ΩQ2:V DD = 15 V, I D = 25 A, R GEN = 6 ΩQ1Q27.79.21518nst r Rise Time Q1Q22.23.41010nst d(off)Turn-Off Delay Time Q1Q219283446nst f Fall Time Q1Q21.82.41010nsQ g Total Gate Charge V GS = 0 V to 10 V Q1:V DD = 15 V,I D = 13 AQ2:V DD = 15 V,I D = 25 A Q1Q221372952nCQ g Total Gate Charge V GS = 0 V to 4.5 V Q1Q29.5171324nCQ gs Gate to Source Gate Charge Q1Q23.95.9nCQ gd Gate to Drain “Miller” Charge Q1Q22.64nC® Power Stage©2011 Fairchild Semiconductor CorporationFDMS3664S Rev.C13F Q22234Notes:1:R θJA is determined with the device mounted on a 1 in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R θJC is guaranteed by design while R θCA is determined by the user's board design.2:Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.3:As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied with the negative Vgs rating.4:E AS of 33 mJ is based on starting T J = 25 o C; N-ch: L = 1.9 mH, I AS = 6 A, V DD = 27 V, V GS = 10 V. 100% test at L= 0.1 mH, I AS = 16 A.5:E AS of 48 mJ is based on starting T J = 25 o C; N-ch: L = 0.6 mH, I AS = 13 A, V DD = 27 V, V GS = 10 V. 100% test at L= 0.1 mH, I AS = 23 A.a. 57 °C/W when mounted on a 1 in 2 pad of 2 oz copperc. 125 °C/W when mounted on a minimum pad of 2 oz copperb. 50 °C/W when mounted on a 1 in 2 pad of 2 oz copperd. 120 °C/W when mounted on a minimum pad of 2 oz copperPower StageFDMS3664S Rev.C1Power Stage5FDMS3664S Rev.C1Power Stage6FDMS3664S Rev.C1Power StageFDMS3664S Rev.C1® Power StageFDMS3664S Rev.C18Power Stage9FDMS3664S Rev.C1®Power Stage10FDMS3664S Rev.C1分销商库存信息: FAIRCHILD FDMS3664S。

CW1274 Datasheet说明书

CW1274 4~7节电池保护IC功能特性●过充电保护•阈值范围3.650V、3.850V、4.175V~4.350V，25mV步进，±25mV精度●过放电保护•阈值范围2.300V~2.800V，100mV步进，±30mV精度●放电过流保护•过流检测1阈值范围0.050V~0.100V，±5mV精度•过流检测2阈值范围0.100V~0.200 V，，±10mV精度•短路保护阈值范围0.200V~0.500V，±20mV精度●充电过流保护•阈值范围-0.010V~-0.050V，±5mV精度●温度检测功能充放电高低温保护，温度外部可设●均衡功能●断线检测功能●负载检测功能●级联功能●低功耗设计•工作状态20μA (25°C)•休眠状态5μA (25°C)●封装形式：SSOP24应用领域●吸尘器●电动工具●电动自行车●后备电源●锂离子及锂聚合物电池包基本描述CW1274系列产品是一款高度集成的4~7串锂离子电池或锂聚合物电池保护芯片。

CW1274为电池包提供过充、过放、充放电过流、断线、充放电过温保护以及均衡功能，并支持芯片级联使用。

CW1274 典型应用框图CW1274产品选择指南CW1274 X X X X封装形式，S: SSOP24参数类型，从A到Z电池类型，L:代表锂离子电池F:代表磷酸铁锂电池功能和版本信息，从A 到Z产品目录CW1274 引脚排列图CW1274CW1274 绝对最大额定值注意：绝对最大额定值是指无论在任何条件下都不能超过的额定值。

如果超过此额定值，有可能造成产品损伤。

ESD等级额定工作电压CW1274电气特性除特殊说明外T A=25°CCW1274*2充放电温度保护温度取决于不同电阻的设定，放电低温保护温度默认为充电过温保护温度-20℃，即充电低温保护温度为0℃，则放电低温保护温度为-20℃*3所有过电流保护（包括过流1，过流2和短路保护）解除延迟时间均为60msCW1274原理框图CW1274 功能描述正常状态所有电池电压处于过充检测电压（V OC）和过放检测电压（V OD）之间，且CS端子电压处于过流检测电压（V EC1）和充电过流检测电压（V COC）之间时，CW1274处于正常工作状态。

SE2597L-R;中文规格书,Datasheet资料

DATA SHEET SE2597L: 2.4 GHz Power Amplifier with Power Detector Applications
DSSS 2.4 GHz WLAN (IEEE802.11b) OFDM 2.4 GHz WLAN (IEEE802.11g) OFDM 2.4 GHz WLAN (IEEE802.11n) Access Points, PCMCIA, PC cards
Skyworks Solutions, Inc. ● Phone [781] 376-3000 ● Fax [781] 376-3100 ● sales@ ● DST-00211 Rev 1.7 ● Skyworks Proprietary Information ● Products and Product Information are Subject to Change Without Notice ● April 3, 2012
Ordering Information
Part Number SE2597L SE2597L-R SE2597L-EK1 Package 16 Pin QFN 16 Pin QFN Evaluation Kit Remark Samples Tape and Reel Standard
Functional Block Diagram
2 of 9
/
DATA SHEET SE2597L: 2.4 GHz Power Amplifier with Power Detector Absolute Maximum Ratings
These are stress ratings only. Exposure to stresses beyond these maximum ratings for a long period of time may cause permanent damage to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions defined below. This device is ESD sensitive. Handling and assembly of this device should be at ESD protected workstations. Symbol VCC RFout VEN RFin TSTG ESD HBM Definition Supply Voltage on pins VCC Supply Voltage on pins VCC3 (Note: SE2597L application circuit must be followed for operation above 3.6 V) Power Amplifier Enable RF Input Power, RF_OUT terminated into 50Ω match Storage Temperature Range JEDEC JESD22-A114 all pins Min. -0.3 -0.3 -0.3 -40 Max. 4 5.5 3.6 10 150 500 Unit V V V dBm °C V

VB2 Plus-12中文样本

V
执行标准 Relevant standarder
额定操作顺序 Rated operating sequence
重量 Weight 出厂日期 Manufacture date
O-0.3s-CO-180s-CO kg
上海通用电气开关有限公司 Shanghai GE Breakers Co.,Ltd.
注意！高压危险！请严格遵守操作规程。
户内高压真空断路器 Vacuum circuit breaker
kV A
Hz kV kA kA
额定电缆充电开断电流 Rated cable-charging breaking current
A
电机电压
motor voltage
V
分闸合闸装置电压 Rated supply voltage of closing and opening devices
Warning!
High voltage dangerous! Always observe the instruction manual and follow the rules.
503 516 531
498
(456)
150
150
19
移开式
280
76
78
436 599
4 200
规格 T630A-25~31.5kA T1250A-25~31.5kA
12
12
2500
3150
50
50
42
42
75
75
40
40
125
125
40
40
125
125
分-0.3s-合分-180s-合分
30

DSI30-12AS;DSI30-08AS;DSI30-16AS;DSI30-08A;DSI30-12A;中文规格书,Datasheet资料

Tamb
0 0 20 40 60 80 100 120 140 °C TC
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180°
1.2 K/W 1.0
ZthJC
Fig. 5 Max. forward current versus case temperature
Nm

A
C (TAB)
TO-220 AC
C A C (TAB)
Conditions TC = 95°C; 180° sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
50
TVJ = 150°C
10
0 0.0
0.4
0.8 VF
1.2 V
1.6
0 0.001
102 0.01 0.1 t s 1 1 2 3 4 5 6 7 ms 8 910 t
Fig. 1 Forward current versus voltage drop per diode
60 W
Fig. 2 Surge overload current
Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029

DSEI30-12A;中文规格书,Datasheet资料

TVJ = 150°C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25°C Mounting torque
Applications
q
q q q
138 0.8...1.2 6
q
q
Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
q q
Symbol
Test Conditions TVJ = 25°C TVJ = 25°C TVJ = 125°C IF = 30 A;
Characteristic Values typ. max. 750 250 7 2.2 2.55 1.65 18.2 0.9 0.25 35 mA mA mA V V V mW K/W K/W K/W ns A
V 50 40 VFR
IRM
trr
max. 0.6
IF=30A IF=60A IF=30A IF=15A
QR
0.4
0.4
0.2 0.2 0.0 0 40 TJ 80 120 °C 160 0.0 0 200 -diF/dt 400 A/µs 600 typ.

SA12中文资料

SA12中⽂资料SA5.0thruSA170AFEATURES:ECONOMICAL SERIESAVAILABLE IN BOTH UNIDIRECTIONAL AND BI-DIRECTIONAL CONSTRUCTION 5.0 TO 170 STAND-OFF VOLTAGE AVAILABLE ? 500 WATTS PEAK PULSE POWER DISSIPATION ?QUICK RESPONSEDESCRIPTION:This Transient Voltage Suppressor is an economical, molded, commercial product used to protect voltage sensitive components from destruction or partial degradation.The response time of their clamping action is virtually instantaneous (1 x 10-12seconds) and they have a peak pulse power rating of 500 watts for 1 ms as depicted in Figure 1 and 2. Microsemi also offers a great variety of other Transient Voltage Suppressor's to meet higher and lower power demands and special applications. MAXIMUM RATINGS:Peak Pulse Power Dissipation at 25°C: 500 WattsSteady State Power Dissipation: 2.5 Watts at T L = +75°C3/8" Lead Lengtht clamping (0 volts to BV Min.):Unidirectional <1x10-12 Seconds: Bi-directional <5x10-9Seconds.Operating and Storage Temperature: -55° to +175°C8700 E. Thomas Road Scottsdale, AZ 85252Phone: (480) 941-6300Fax: (480) 947-15035.0 thru 170 volts500 Watts Transient Voltage Suppressors2 x ?.032 ± .002[.81 ± .05].107[2.72]max.POLARITYMark {cathode}.205[5.21]MAX.NOTE: DIMENSIONS IN [ ] =MILLIMETERSP E A K P U L S E P O W E R (P p p ) O R C O N T I N U O U S P O W E R I N P E R C E N T O F 25°C R A T I N G FIGURE 1DERATING CURVE50100150175255075100TYPICAL CHARACTERISTIC CURVEST L LEAD TEMPERATURE °CPulse Time Duration (tp) is Defined as that point where Ip decaysto 50% of I surgePeak Value Ipp 100501234TIME (t) IN MILLISECONDSFIGURE 2PULSE WAVEFORM FOR EXPONENTIAL SURGEP U L S E C U R R E N T I N P E R C E N T O F I p pMECHANICALCHARACTERISTICSCASE: Void free transfer molded thermosetting plastic.FINISH: Readily solderable.POLARITY: Band denotes cathode. Bi-directional not marked.WEIGHT: 0.7 gram (Appx.).MOUNTING POSITION: AnyDO-412 X1.10[27.94]MIN.SA170A ELECTRICAL CHARACTERISTICS AT 25°C PART NUMBERBREAKDOWNVOLTAGE V(BR)MIN.MAXTESTCURRENTI TRATEDSTANDOFFVOLTAGEV WMMAX. REVERSESTANDBYCURRENTI D @V WMMAX.PEAKREVERSEVOLTAGEV C MAX.@ I PPMAX. PEAKPULSECURRENTI PP(Figure 2)MAX.TEMP.COEFFICIENTOF V(BR)-55°C TOαV(BR) VOLTS VOLTS mA VOLTSµ ADC VOLTS AMP% / °CSA5.0 6.407.3010 5.06009.652.057 SA5.0A 6.407.0010 5.06009.254.3.057 SA6.0 6.678.1510 6.060011.443.9.059 SA6.0A 6.677.3710 6.060010.348.5.059 SA6.57.228.8210 6.540012.340.7.061 SA6.5A7.227.9810 6.540011.244.7.061SA7.07.789.51107.015013.337.8.065 SA7.0A7.788.60107.015012.041.7.065 SA7.58.3310.217.55014.335.0.067SA7.5A8.339.2117.55012.938.8.067 SA8.08.8910.918.02515.033.3.070 SA8.0A8.899.8318.02513.636.7.070SA8.59.4411.518.5515.931.4.073 SA8.5A9.4410.418.5514.434.7.073 SA9.010.012.219.0116.929.5.076SA9.0A10.011.119.0115.432.5.076 SA1011.113.6110118.826.6.078 SA10A11.112.3110117.029.4.078SA1112.214.9111120.124.9.081 SA11A12.213.5111118.227.4.081 SA1213.316.3112122.022.7.082SA12A13.314.7112119.925.1.082 SA1314.417.6113123.821.0.084 SA13A14.415.9113121.523.2.084SA1415.619.1114125.819.4.086 SA14A15.617.2114123.221.5.086 SA1516.720.4115126.918.8.087SA15A16.718.5115124.420.6.087 SA1617.821.8116128.817.6.088 SA6A17.819.7116126.019.2.088SA1718.923.1117130.516.4.090 SA17A18.920.9117127.618.1.090 SA1820.024.4118132.215.5.092SA18A20.022.1118129.217.2.092 SA2022.227.1120135.813.9.093 SA20A22.224.5120132.415.4.093thruSA170A ELECTRICAL CHARACTERISTICS AT 25°CPART NUMBERBREAKDOWNVOLTAGE V(BR)MIN.MAXTESTCURRENTI TRATEDSTANDOFFVOLTAGEV WMMAX. REVERSESTANDBYCURRENTI D @V WMMAX.PEAKREVERSEVOLTAGEV C MAX.@ I PPPULSECURRENTI PP(Figure 2)MAX.TEMP.COEFFICIENTOF V(BR)-55°C TO175°CαV(BR) VOLTS VOLTS mA VOLTSµ ADC VOLTS AMP% / °CSA2224.429.8122139.412.7.094 SA22A24.426.9122135.514.1.094 SA2426.732.6124143.011.6.096SA24A26.729.5124138.912.8.096 SA2628.935.3126146.610.7.097 SA26A28.931.9126142.111.9.097SA2831.138.0128150.09.9.098 SA28A31.134.4128145.411.0.098 SA3033.340.7130153.59.3.099SA30A33.336.8130148.410.3.099 SA3336.744.9133159.08.5.100 SA33A36.740.6133153.39.4.100SA3640.048.9136164.37.8.101 SA36A40.044.2136158.18.6.101 SA4044.454.3140171.47.0.101SA40A44.449.1140164.57.8.101 SA4347.858.4143176.7 6.5.102 SA43A47.852.8143169.47.2.102 SA4550.061.1145180.3 6.2.102 SA45A50.055.3145172.7 6.9.102 SA4853.365.1148185.5 5.8.103 SA48A53.358.9148177.4 6.5.103SA5156.769.3151191.1 5.5.103 SA51A56.762.7151182.4 6.1.103 SA5460.073.3154196.3 5.2.104SA54A60.066.3154187.1 5.7.104 SA5864.478.71581103.0 4.9.104 SA58A64.471.2158193.6 5.3.104SA6066.781.51601107.0 4.7.104 SA60A66.773.7160196.8 5.2.104 SA6471.186.91641114.0 4.4.105SA64A71.178.61641103.0 4.9.105 SA7077.895.11701125.0 4.0.105 SA70A77.886.01701113.0 4.4.105SA7583.3102.01751134.0 3.7.105 SA75A83.392.11751121.0 4.1.105thruSA170A ELECTRICAL CHARACTERISTICS AT 25°CPART NUMBERBREAKDOWNVOLTAGE V(BR)MIN.MAXTESTCURRENTI TRATEDSTANDOFFVOLTAGEV WMMAX. REVERSECURRENTI D @V WMMAX.PEAKREVERSEVOLTAGEV C MAX.@ I PPMAX. PEAKPULSECURRENTI PP(Figure 2)MAX.TEMP.COEFFICIENTOF V(BR)-55°C TO175°CαV(BR) VOLTS VOLTS mA VOLTSµ ADC VOLTS AMP% / °CSA7886.7106.01781139.0 3.6.106 SA78A86.795.81781126.0 4.0.106 SA8594.4115.01851151.0 3.3.106SA85A94.4104.01851137.0 3.6.106 SA90100.0122.01901160.0 3.1.107 SA90A100.0111.01901146.0 3.4.107SA100111.0136.011001179.0 2.8.107 SA100A111.0123.011001162.0 3.1.107 SA110122.0149.011101196.0 2.6.107SA110A122.0135.011101177.0 2.8.107 SA120133.0163.011201214.0 2.3.107 SA120A133.0147.011201193.0 2.0.107SA130144.0176.011301231.0 2.2.108 SA130A144.0159.011301209.0 2.4.108 SA150167.0204.011501268.0 1.9.108SA150A167.0185.011501243.0 2.1.108 SA160178.0218.011601287.0 1.7.108 SA160A178.0197.011601259.0 1.9.108SA170189.0231.011701304.0 1.6.108 SA170A189.0209.011701275.0 1.8.108 Note: For Bi-directional construction, indicate a C or CA suffix after the part number, i.e. SA5.0CAthru SA170A10010C -C A P A C I T A N C E - P I C O F A R AD S1001001000V (BR)- BREAKDOWN VOLTAGE - VOLTSFIGURE 3TYPICAL CAPACITANCE VS BREAKDOWN VOLTAGE107.05.03.02.01.00.70.50.30.20.10.11.010********0.20.5 2.0 5.020*********tw - Pulse Width µsFIGURE 4PEAK PULSE POWER VS. PULSE TIME(P P P ) - P e a k P u l s e P o w e r , (k W )20305070。

DSEP30-12A;DSEP30-12AR;中文规格书,Datasheet资料

549IXYS reserves the right to change limits, test conditions and dimensions.I FAV =30 A V RRM =1200 V t rr =40 nsV RSM V RRMTypeV V 12001200DSEP 30-12A 12001200DSEP 30-12ARSymbol ConditionsMaximum RatingsI FRMS 70A I FAVM rectangular, d = 0.5;T C (Vers. A) = 115°C30A T C (Vers. AR)= 110°C I FSM T VJ = 45°C; t p = 10 ms (50 Hz), sine 200A E AS T VJ = 25°C; non-repetitive 14mJ I AS = 11.5 A; L = 180 µHI AR V A = 1.25·V R typ.; f = 10 kHz; repetitive1.2A T VJ -55...+175°C T VJM 175°C T stg -55...+150°C P tot T C = 25°C165W M d *mounting torque0.8...1.2Nm F C mounting force with clip20...120N V ISOL **50/60 Hz RMS; I ISOL ≤ 1 mA; leads-to-tab 2500V~Weight typical 6g* Version A only; ** Version AR onlySymbol ConditionsCharacteristic Values typ.max.I R①T VJ = 25°C;V R = V RRM 250µA T VJ = 150°C;V R = V RRM 1mA V F ②I F = 30 A;T VJ = 150°C 1.79V T VJ = 25°C2.74V R thJC Version A 0.9K/W Version AR1.1K/W R thCH 0.25K/W t rr I F = 1 A; -di/dt = 200 A/µs;40nsV R = 30 V; T VJ = 25°CI RMV R = 100 V;I F = 50 A; -di F /dt = 100 A/µs 8.511.4AT VJ = 100°CHiPerFRED TM Epitaxial Diodewith soft recoveryFeatures•International standard package •Planar passivated chips •Very short recovery time•Extremely low switching losses •Low I RM -values•Soft recovery behaviour •Epoxy meets UL 94V-0•Version ..R isolated and UL registered E153432Applications•Antiparallel diode for high frequency switching devices •Antisaturation diode •Snubber diode•Free wheeling diode in converters and motor control circuits•Rectifiers in switch mode power supplies (SMPS)•Inductive heating•Uninterruptible power supplies (UPS)•Ultrasonic cleaners and welders Advantages•Avalanche voltage rated for reliable operation•Soft reverse recovery for low EMI/RFI •Low I RM reduces:-Power dissipation within the diode -Turn-on loss in the commutating switchDimensions see Outlines.pdfPulse test:① Pulse Width = 5 ms, Duty Cycle < 2.0%② Pulse Width = 300 µs, Duty Cycle < 2.0%Data according to IEC 60747 and per diode unless otherwise specified.A = Anode, C = CathodeTO-247 ADISOPLUS 247TMVersion AVersion ARAC AC CA549IXYS reserves the right to change limits, test conditions and dimensions.0.00.40.81.2010203040506070I F A t fr µs Fig. 3Peak reverse current I RMversus -di F /dtFig. 2Reverse recovery charge Q rversus -di F /dtFig. 1Forward current I F versus V FFig. 6Peak forward voltage V FR and t frversus di F /dt Fig. 7Transient thermal resistance junction to caseConstants for Z thJC calculation ..A:i R thi (K/W)t i (s)10.4650.005220.1790.000330.2560.0397NOTE: Fig. 2 to Fig. 6 shows typical valuesConstants for Z thJC calculation ..AR:i R thi (K/W)t i (s)10.3680.005220.14170.000330.02950.000440.56040.0092分销商库存信息:IXYSDSEP30-12A DSEP30-12AR。

29123;中文规格书,Datasheet资料

Web Site: Forums: Sales: sales@Technical: support@Office: (916) 624-8333Fax: (916) 624-8003Sales: (888) 512-1024Tech Support: (888) 997-8267 Hitachi® HM55B Compass Module (#29123)General DescriptionThe Hitachi HM55B Compass Module is a dual-axis magnetic field sensor that can add a sense of direction to your next electronic or robotic project. The sensing device on the Compass Module is a Hitachi HM55B chip. An onboard regulator and resistor protection make the 3 volt HM55B chip compatible with 5 volt BASIC Stamp® microcontroller supply and signal levels. The Compass Module also makes all the power and signal connections on the tiny surface mount HM55B chip accessible in a breadboard-friendly 0.3 inch wide 6-pin DIP package. Acquiring measurements from the module is made easy with the BASIC Stamp 2 microcontroller's SHIFTIN and SHIFTOUT commands, which are designed for synchronous serial communication with chips like the HM55B.Features•Sensitive to microtesla (µT) variations in magnetic field strength•Simplifies direction by resolving magnetic field measurements into two component axes•Good for 6-bit (64-direction) resolution measurements after software calibration•Only 30 to 40 ms between start measurement and data-ready•Built-in resistor protection for data pins eliminates bus conflict risks•Compact and breadboard-friendly 0.3 inch, 6-pin DIP package•Compatible with all BASIC Stamp, Javelin Stamp and SX microcontrollers•Makes communication and direction calculations especially easy with the PBASIC commands SHIFTOUT, SHIFTIN, and ATN for the BASIC Stamp 2 series of microcontrollersApplication Ideas•Mobile robot direction sensor•Handheld electronic compass•Weathervane indicator for remote weather stations•Audible compass for the vision impaired•Automotive electronic compassQuick Start Circuit29123Downloading the Example ProgramsThe example programs featured in the Source Code section (pages 12 - 24) are also available for download from the Hitachi HM55B Compass Module product page at .√Go to /detail.asp?product_id=29123.√Click the "Hitachi HM55B Compass Module Source Code (.zip)" link and download the file.√Unzip to a convenient folder.Connecting and Testing the Compass ModuleThis section contains connection and test instructions for the Parallax BASIC Stamp 2® series and Ubicom SX microcontrollers.BASIC Stamp 2 SeriesUse the instructions in this section to test your Hitachi HM55B Compass Module if you have a BASIC Stamp 2, 2sx, 2e, 2p, 2pe, or 2px. The goal of this first test is to verify that the module is connected, functional, and communicating properly with the BASIC Stamp. Since this first test is run before calibration, there may sizeable differences between magnetic compass directions and what the module reports.√Build the circuit shown on page 1.√Place your board on a level surface away from magnetic field disturbances. Common culprits include magnetic compasses, motors, bar/horseshoe/ring magnets, and large metal objects.Also, make sure your programming cable and power cords do not wrap around or pass near the sensor.√Open TestHm55bCompass.bs2 with the BASIC Stamp Editor (v2.0 or later). Update the $STAMP directive if needed, then run the program.√Test your Compass Module for direction detection as shown below, comparing your degree measurements to the compass legend in the figure.CalibrationThe calibration and test-calibration programs will compensate for the effects of magnetic fields that may be resident to the module PCB and the carrier board it's mounted on, as well as nearby jumper wires and batteries. It also corrects for the HM55B chip's axis sensitivity, offset and skew errors, if any. You will need a magnetic compass to verify magnetic north as a reference. After calibration, the Hitachi HM55B Compass Module should be able to accurately discern 64 or more angles, referenced to magnetic north.√Make a printout of the 16-segment compass shown below.√Align the printout to magnetic north with the aid of the magnetic compass.√Affix the aligned printout to your work surface.√Make sure to set the magnetic compass well away from the printout before continuing.√Align the Compass Module to magnetic north by lining up the edge of your carrier board with the dashed line that passes through the 0° mark.The program CalibrateHm55bCompass.bs2 will prompt you to take a first series of measurements at 90°increments to gather compass offsets. Then, you will take a second series of measurements at 22.5° increments to gather information for a linear interpolation table. Both sets of measurements will be saved in the BASIC Stamp EEPROM so that the TestCalibratedHM55BCompass.bs2 program can use them.√Run CalibrateHm55bCompass.bs2.√Make sure to click the Transmit windowpane shown in this figure before following and responding to the Debug Terminal prompts.√When you have completed the calibration process, run TestCalibratedHM55BCompass.bs2. Array ArrayCalibrateHM55BCompass.bs2 writes the calibration values to EEPROM, so they will be available for TestCalibratedHM55BCompass.bs2 even after the power is reset. TestCalibratedHM55BCompass.bs2 will display the angle from north in both binary radians (brads) and degrees. When you run this program after calibration, the accuracy of the degree measurements should be significantly improved. While degrees parse a full circle into 360 equal segments, brads parse the circle into 256 segments. North is still 0, but the brad measurements for east, south and west are 64, 128, and 192 respectively. In applications where accuracy is the top priority, use the brad measurements because they introduce one less rounding error into the measurement. Further accuracy improvements can be realized if both the calibration and calibration-test programs are modified to average multiple measurements.Testing SensitivityThe Compass Module operates by comparing the magnetic field intensities sensed by its two perpendicular axes. The magnetic field strength corresponding to a measurement of 1 should resolve to somewhere between 1 and 1.6 µT. To find out how many microteslas per unit each axis reports with your particular Compass Module, use TestCalibratedHM55BCompass.bs2. Start by finding the maximum possible axis measurement. Do this by orienting the x-axis to magnetic north, then tilt up and down until you find the highest value. Compare this to the total magnetic field intensity in your area. In thecontinental US, you can find a Total Intensity Map on this page:/articles/geology/a_geomag.html.Make sure to divide their nanotesla (nT) values by 1000 to convert to microteslas (µT).SX MicrocontrollerWhile this connection and testing procedure is set up for the SX-28, it should work on any of the SX series of microcontrollers with a simple update of the device directive. Make sure you are using the SX-Key v3.1 IDE v3.10 or newer, along with the SX-Key and an SX-28 chip.√Build the circuit shown below.√Open TestHm55bCompass.SXB with the SX-Key IDE.√Save, Compile, and Debug (CTRL-S, A, D)√Click the Debug window's Poll button. If the Watch window is not visible, also click the Watch button to bring it to the foreground.√Monitor the Watch window as you point the module in various directions.√Use arctan(-y/x) to calculate the heading angle, counterclockwise from north.Resources and DownloadsCheck out the Hitachi HM55B Compass Module product page for example programs, the HM55B datasheet, and more:/detail.asp?product_id=29123Theory of OperationThe Hitachi HM55B Compass Module has two axes, x and y. Each axis reports the strength of the magnetic field's component parallel to it. The x-axis reports (field strength) × cos(θ), and the y-axis reports the (field strength) × sin(θ). To resolve θ into a clockwise angle from north, use arctan(-y/x), which in PBASIC 2.5 is x ATN -y. The ATN command returns the angle in binary radians. To convert to degrees with PBASIC, just apply */ 360 to the variable storing the binary radian measurement.The Hitachi HM55B chip on the Compass Module reports its x and y axis measurements in terms of microteslas (µT) in 11-bit signed values. The HM55B is designed to return a value of 1 for a north magnetic field of 1 µT parallel to one of its axes. If the magnetic field is south, the value will be -1. Keep in mind that these are nominal values. According to the HM55B datasheet, the actual µT value for a measurement of 1 could range anywhere from 1 to 1.6 µT. Also keep in mind that a negative 11-bit value will not appear negative in a word variable unless a mask is applied. For example, when bit-10 is 1, bits 11 to 15 are also changed to 1 with a mask in the test and calibration programs.The microcontroller connected to the HM55B must control its enable and clock inputs and use synchronous serial communication to get the axis measurements from its data input and data output pins. For example, a BASIC Stamp 2 can be programmed to control the Compass Module's enable lines with HIGH/LOW and send values that reset the device and start a measurement with SHIFTOUT commands. The SHIFTOUT command controls the Compass Module’s clock input as it sends data bit values to its data input. The converse of SHIFTOUT is SHIFTIN, which also controls the device's clock input as it collects data bits sent by the device's data output pin.It takes the HM55B 30 to 40 ms to complete a given measurement. The microcontroller can either perform other tasks during this time or poll until the measurement is complete. The polling is a combination of SHIFTOUT commands that request the status, and SHIFTIN commands that acquire the status. When the SHIFTIN receives status flags indicating that the measurement is complete, a second and third SHIFTIN command can then store the 11-bit x and y axis measurements in variables.Precautions• Do not apply voltages to the device that are outside the values stated in the Pin Definitions and Ratings section.•Do not operate or store the Compass Module near sources of strong magnetic fields. Strong magnetic fields can be created by bar and ring magnets, electric motors, and other coil elements such as solenoids, relays, and large inductors.• Do not apply magnetic fields in excess of 300 µT to the Compass Module. Magnetic fields stronger than 300 µT can permanently damage the sensor.•Mount the Compass Module as far away as possible from magnetic field disturbances. These include magnets (including compass needles), motors, power cords, coils, metal boxes, and sometimes the ground.angle θ= arctan(-y/x)SpecificationsSymbol Quantity MinimumTypical MaximumUnitsB SE Sensitivity † 1.0 1.6 µT/lsbH Linear measurement range † -180 180 µT d θIndividual axis offset36°T CONV Conversion time † 30 40 ms T OPE Operating temperature 070 °C† From Hitachi HM55B DatasheetPin Definitions and RatingsSymbol QuantityMinimum Typical Maximum UnitsVcc Supply Voltage 4.8 5.0 5.2 VIcc(Ave) Average active supply current * 5 7mA Icc(Pk) Peak instantaneous current ** 30 45 mA Icc(Sb) Standby supply current 2 3 mA GND Ground reference connection 0 V V OH Signal high transmit (Dout) Vcc × 0.9 Vcc Vcc + 0.5 V V OL Signal low transmit (Dout) GND - 0.3 GND Vcc × 0.15 V V IH Signal high receive (/En, CLK, Din) Vcc × 0.8 Vcc Vcc + 0.3 V V ILSignal low receive (/En, CLK, Din)- 0.3GNDVcc × 0.12V** Typical duration is 5 µs(1) Din - Serial data input (2) Dout - Serial data output (3) GND - Ground -> 0 V(4) CLK - Synchronous clock input (5) /EN - Active-low device enable (6) Vcc -+5 V power input29123Connection DiagramsThe 3-wire interface is recommended for most applications. While all the connections shown here are to individual I/O pins, the /EN pin is the only one that needs a dedicated I/O pin. The Din/Dout pins can share a line with other synchronous serial devices, and likewise with CLK.The Din and Dout pins do not have to be tied together; they can also be controlled individually. This makes it possible to share communication lines with other synchronous serial devices that have dedicated input and output lines.Command SetThese commands are shifted-out to the Compass Module.Binary ValueQuantity0000 Reset device 0001 Start measurement 0011Report measurement status (and transmit the measurement if it's ready)4-wire interface3-wire interfaceStatus FlagsThe Compass Module will reply to the report measurement status command with one of these values.Binary Value QuantityBits - 3210 3 and 2 indicate measurement completion, 1 and 0 indicate measurement errors 1100 11 -> Measurement completed; 00 -> no errors00XX Measurement still in progress, or the device has been reset.XX11 /EN did not receive low-high-low signal between start and report commandsCommunication ProtocolAll values transmitted to and received from the Compass Module are most significant bit first, with the bit value valid after the clock signal's rising edge. For the BASIC Stamp 2, this means set the SHIFTOUT command’s Mode argument to MSBFIRST, and the SHIFTIN command’s Mode argument to MSBPOST.To reset the HM55B, take /EN from high to low, and shift-out %0000, then set /EN high again.After reset, start a measurement by taking /EN low again, then shift-out %1000. Leave /EN low until checking the measurement status.To check the measurement status, start by sending a positive pulse to /EN. Then, shift-out %1100, and shift-in the status flags. While the measurement is in progress, the end flag and error flag will both be 00. The compass Module may be polled for status repeatedly until the measurement is complete, at which point the end flag will change to 11. Upon receipt of %1100, discontinue polling. Leave /EN low, and move on to shifting-in the x and y-axis values.Shifting-in the x and y-axis values is a simple matter of shifting-in 11 bits for the x-axis measurement followed by 11 more bits for the y-axis measurement. After completing the y-axis shift-in, set the /EN pin high again.Module Dimensions分销商库存信息: PARALLAX 29123。

DSEI120-12A中文资料

0 0.0 0.5 1.0 1.5 V 2.0
VF
Fig. 1 Forward current I versus V
F
F
1.4
1.2 Kf
1.0

0.6
IRM Qr
16
µC 14
TVJ= 100°C VR = 600V
Qr 12 10 8
IF=140A IF= 70A IF= 35A
6
4
2
0
100
°C
357
W
0.8...1.2
Nm
6
g
Symbol
Test Conditions
Characteristic Values
typ.
max.
IR
VF
VT0 rT RthJC RthCK RthJA trr IRM
TVJ = 25°C TVJ = 25°C TVJ = 125°C
VR = VRRM VR = 0.8 • VRRM VR = 0.8 • VRRM
元器件交易网
Fast Recovery Epitaxial Diode (FRED)
DSEI 120
IFAVM = 109 A VRRM = 1200 V trr = 40 ns
VRSM V 1200
VRRM V
1200
Type DSEI 120-12A
TO-247 AD
A
C
C
A
C
A = Anode, C = Cathode
Symbol IFRMS IFAVM ÿÿx IFAV y IFRM IFSM
I2t
TVJ TVJM Tstg Ptot Md Weight

PSA-12中文资料

元器件交易网
• Choose model with 120V ac North American power cord, or with 220V ac Euro power cord • Includes pre-wired 9-pin D-sub connector for direct connection to LED lights • Tough ABS housing
Used with
Connections
Pin 1 = +V Pin 2 = dc common Pin 3 = dc common Pin 4 = +V Pin 5 = +V
PSA-12E
1.8 m (6') 12V dc ±5% Terminated with with voltage 9-pin D-sub regulation of ±1% connector 3.5 A max. (female pins)
Printed in USA
05/01
P/N 67445
Banner EБайду номын сангаасgineering Corp., 9714 Tenth Ave. No., Mpls., MN 55441 • Ph: 763.544.3164 • • Email: sensors@
86.4 mm (3.40")
149.1 mm (5.87")
1.8 m (6.0')
50.8 mm (2.00")
Accessory Extension Cables
Models
DB906† DB910 DB9Y†
†
†
Length
1.8 m (6')

AVS12中文资料

ITSM
Repetitive peak off-state voltage (2)
RMS on-state current (360° conduction angle)
Non repetitive surge peak on-state current ( Tj initial = 25°C )
TC = 70°C
tion and high security triggering of the triac. When connected to VSS, the mode input activates an additional option. If the main power drops from 220V to 110V, the triac control remains locked to the 220V mode and avoids any high voltage spike when the voltage comes back to 220V. When connected to VDD, the mode input desactivates this option. • The TRIAC is specially designed for this application. An optimization between sensitivity and dynamic parameters of the triac gate highly reduces the losses of supply resistor and allows excellent immunity against disturbances.
TRIAC
s HIGH EFFICIENCY AND SAFETY SWITCHING s UNINSULATED PACKAGE : AVS12CB s VDRM = ± 600V s IT(RMS): 12A

ESDA14V2L中文资料(ST)中文数据手册「EasyDatasheet - 矽搜」

参数
静电放电
MIL-STD 883C - 方法3015-6 IEC 1000-4-2气隙放电 IEC 1000-4-2接触放电
峰值脉冲功率（8/20
µs)
存储温度范围最高结温
在10秒最大无铅焊接温度
工作温度范围
电气特性
符号
VRM VBR VCL IRM IPP
T C Rd VF
参数对峙电压击穿电压钳位电压泄漏电流峰值脉冲电流电压温度系数电容动态电阻正向压降
芯片中文手册,看全文,戳
®
专用分立器件
A.S.D.
应用
在静电在瞬间过电压防护护
敏感设备是必需,如： - 电脑 - 打印机 - 通信系统这是格外推荐用于RS232I / O端口防护护那里线路接口承受只有2kVESD浪涌.
ESDAxxL
双TRANSIL ARRAY 用于ESD防护护
6.1
7.2
1
20
5.25
ESDA14V2L 14.2 15.8
1
5
12
注 1 ：方脉伊普= 15A,TP=2.5μS. 注 2 : VBR= T* （环境温度Tamb -25°C）* VBR（25°C）
Rd typ. 注1 m 280 350 650
T
C
max. typ.
注2
0V偏置
10-4/°C pF
(Tamb = 25°C)
值
单元
kV 25 16 9
300
W
- 55到+ 150
°C
150
°C
260
°C
- 40至+ 85
°C
I
如果
VBR