STD2NK60Z中文资料
STF2HNK60Z中文资料
1/12April 2004STQ2HNK60ZR-APSTF2HNK60Z -STD2HNK60Z-1N-CHANNEL 600V -4.4Ω -2.0A TO-92/TO-220FP/IPAKZener-Protected SuperMESH™MOSFETTYPICAL R DS (on)=4.4ΩEXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100%AVALANCHE TESTEDNEW HIGH VOLTAGE BENCHMARKGATE CHARGE MINIMIZEDDESCRIPTIONThe SuperMESH™series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™layout.In addition to pushing on-resistance significantly down,special care is tak-en to ensure a very good dv/dt capability for the most demanding applications.Such series comple-ments ST full range of high voltage MOSFET s in-cluding revolutionary MDmesh™products.APPLICATIONSAC ADAPTORS AND BATTERY CHARGERS SWITH MODE POWER SUPPLIES (SMPS)ORDER CODESTYPEV DSS R DS(on)I D P W STQ2HNK60ZR-AP STD2HNK60Z-1STF2HNK60Z600V 600V 600V<4.8Ω<4.8Ω<4.8Ω0.5A 2.0A 2.0A3W 45W 20WPART NUMBER MARKING PACKAGE PACKAGINGSTD2HNK60Z-1D2HNK60Z IPAK TUBE STQ2HNK60ZR-AP Q2HNK60ZR TO-92AMMOPAK STF2HNK60ZF2HNK60ZTO-220FPTUBETO-92(Ammopack)INTERNAL SCHEMATICSTQ2HNK60ZR-AP -STF2HNK60Z -STD2HNK60Z-12/12ABSOLUTE MAXIMUM RATINGS( )Pulse width limited by safe operating area(1)I SD ≤2A,di/dt ≤200A/µs,V DD ≤V (BR)DSS ,T j ≤T JMAX.(*)Current Limited by packageTHERMAL DATAAVALANCHE CHARACTERISTICSGATE-SOURCE ZENER DIODEPROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device ’s ESD capability,but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source.In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device ’s integrity.These integrated Zener diodes thus avoid the usage of external components.Symbol ParameterValue UnitIPAKTO-220FP TO-92V DS Drain-source Voltage (V GS =0)600V V DGR Drain-gate Voltage (R GS =20k Ω)600V V GS Gate-source Voltage±30V I D Drain Current (continuous)at T C =25°C 2.0 2.0(*)0.5A I D Drain Current (continuous)at T C =100°C 1.26 1.26(*)0.32A I DM ( )Drain Current (pulsed)88(*)2A P TOT Total Dissipation at T C =25°C 45203W Derating Factor0.360.160.025W/°C V ESD(G-S)Gate source ESD(HBM-C=100pF,R=1.5K Ω)2000V dv/dt (1)Peak Diode Recovery voltage slope 4.5V/ns V ISO Insulation Withstand Voltage (DC)--2500--V T j T stgOperating Junction Temperature Storage Temperature-55to 150°C IPAKTO-220FP TO-92Rthj-case Thermal Resistance Junction-case Max 2.77 6.25--°C/W Rthj-amb Thermal Resistance Junction-ambient Max 10062.5120°C/W Rthj-leadThermal Resistance Junction-lead Max ----40°C/W T lMaximum Lead Temperature For Soldering Purpose300300260°CSymbol ParameterMax ValueUnit I AR Avalanche Current,Repetitive or Not-Repetitive (pulse width limited by T j max)2A E ASSingle Pulse Avalanche Energy(starting T j =25°C,I D =I AR ,V DD =50V)120mJSymbol ParameterTest Conditions Min.Typ.Max.Unit BV GSOGate-Source Breakdown VoltageIgs=±1mA (Open Drain)30V3/12STQ2HNK60ZR-AP -STF2HNK60Z -STD2HNK60Z-1ELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)ON/OFFDYNAMICSOURCE DRAIN DIODENote: 1.Pulsed:Pulse duration =300µs,duty cycle 1.5%.2.Pulse width limited by safe operating area.3.C oss eq.is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0to 80%V DSS .Symbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D =1mA,V GS =0600V I DSS Zero Gate VoltageDrain Current (V GS =0)V DS =Max RatingV DS =Max Rating,T C =125°C 150µA µA I GSS Gate-body Leakage Current (V DS =0)V GS =±20V±10µA V GS(th)Gate Threshold Voltage V DS =V GS ,I D =50µA 33.754.5V R DS(on)Static Drain-source On ResistanceV GS =10V,I D =1.0A4.44.8ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (1)Forward Transconductance V DS =15V ,I D =1.0A1.5S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS =25V,f =1MHz,V GS =0280387pF pF pF C oss eq.(3)Equivalent Output Capacitance V GS =0V,V DS =0V to 480V 30pF t d(on)t r t d(off)t f Turn-on Delay Time Rise TimeTurn-off Delay Time Fall TimeV DD =300V,I D =1.0A R G =4.7ΩV GS =10V(Resistive Load see,Figure 3)10302350ns ns ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD =480V,I D =2.0A,V GS =10V112.25615nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (2)Source-drain CurrentSource-drain Current (pulsed) 2.08.0A A V SD (1)Forward On Voltage I SD =2.0A,V GS =0 1.6V t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD =2.0A,di/dt =100A/µs V DD =20V,T j =25°C (see test circuit,Figure 5)1784455ns nC A t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD =13A,di/dt =100A/µs V DD =20V,T j =150°C (see test circuit,Figure 5)2005005ns nC ASTQ2HNK60ZR-AP -STF2HNK60Z -STD2HNK60Z-1Thermal Impedance for TO-92Safe Operating Area for TO-925/12STQ2HNK60ZR-AP -STF2HNK60Z -STD2HNK60Z-1TransconductanceSTQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-16/12Normalized BVDSS vsTemperatureSource-drain Diode ForwardCharacteristics7/12STQ2HNK60ZR-AP -STF2HNK60Z -STD2HNK60Z-1Fig.5:Test Circuit For Inductive Load Switching And Diode Recovery TimesFig.4:Gate Charge test CircuitFig.2:Unclamped Inductive WaveformFig.1:Unclamped Inductive Load TestCircuitFig.3:Switching Times Test Circuit For ResistiveLoadSTQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-18/129/12STQ2HNK60ZR-AP -STF2HNK60Z -STD2HNK60Z-1DIM.mm.inch MIN.TYPMAX.MIN.TYP.MAX.A1 4.45 4.950.1700.194T 3.303.940.1300.155T1 1.60.06T2 2.30.09d 0.410.560.0160.022P012.512.712.90.490.50.51P2 5.65 6.357.050.220.250.27F1,F2 2.44 2.542.940.090.10.11delta H -22-0.080.08W 17.518190.690.710.74W0 5.76 6.30.220.230.24W18.599.250.330.350.36W20.50.02H 18.520.50.720.80H015.51616.50.610.630.65H1250.98D0 3.84 4.20.150.1570.16t 0.90.035L 110.43l130.11delta P-11-0.040.04TO-92AMMOPACKSTQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-110/12STQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-111/12STQ2HNK60ZR-AP-STF2HNK60Z-STD2HNK60Z-112/12Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronicsAll other names are the property of their respective owners© 2004 STMicroelectronics - All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.。
RD6.2Z中文资料
DATA SHEETThe information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.Document No. D14713EJ2V0DS00 (2nd edition) (Previous No. DC-2139)Date Published June 2000 N CP(K)Printed in Japan©1993DESCRIPTIONType RD6.2Z is planar type zener diode possessing an allowable power dissipation of 200 mW.The purpose is ESD PROTECTION of 5 V Signal Line.FEATURES•Low Terminal Capacitance (8 pF TYP.) for ESD protection•Surge absorber on either sideAPPLICATIONS•ESD protect circuit of 5 V Signal Line.•Constant Voltage, Constant Current, etc.MAXIMUM RATINGS (T A = 25°C)Power Dissipation P 200 mW (Total)Surge Reverse Power P RSM 2 W (t = 10 µs, 1 pulse) Fig.5Junction Temperature T j 150°CStorage TemperatureT stg−55°C to +150°CELECTRICAL CHARACTERISTICS (T A = 25 ± 2°C)Zener VoltageV Z (V)Note 1Dynamic ImpedanceZ Z (Ω)Note 2Reverse CurrentI R (µA)Terminal Capacitance C t (pF), f = 1 MHz Type Number MIN.MAX.I Z (mA)MAX.I Z (mA)MAX.V R (V)TYP.VR (V)RD6.2Z5.96.5560535.58Note 1.Tested with pulse (40 ms)2.Z Z is measured at I Z given a very small A.C. signalData Sheet D14713EJ2V0DS002TYPICAL CHARACTERISTICS (T A = 25°C)Fig. 1 P-T A RATING0255075T A – Ambient Temperature – °CP – P o w e r D i s s i p a t i o n – m W10012515050100150200250Fig. 3 C t -V R CHARACTERISTICS(f = 1 MHz)0.5123V R – Reverse Voltage – VC T – T e r m i n a l C a p a c i t a n c e – p F45102046810Fig. 2 I Z -V Z CHARACTERISTICS5.75.95.86.0V Z – Zener Voltage – V6.16.26.3I Z – Z e n e r C u r r e n t – A100 n 10 n10 1100 10 m1 mµµµData Sheet D14713EJ2V0DS003Fig. 4 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS(7.5 × 10 × 0.675 mm ceramics)1 m10 m 110100100 m t – Time – sZ t h – T r a n s i e n t T h e r m a l I m p e d a n c e – °C /W1011001000Fig. 5 SURGE REVERSE POWER RATINGS110 1 m10 m100 m100t – Pulse Width – sP R S M – S u r g e R e v e r s e P o w e r – W10.1101001000µµµ[MEMO]• The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.• No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.• Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.• NEC devices are classified into the following three quality grades:"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications ofa device depend on its quality grade, as indicated below. Customers must check the quality grade of each devicebefore using it in a particular application.Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robotsSpecial: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support)Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.M7 98. 8。
NKR2诺克说明书(2012)Ver3.0
前言感谢您购买诺克公司的电机软起动器“NKR2”。
该产品用于三相异步电机软起、软停控制。
在使用前请阅读和了解本说明书中的内容，以能正确使用。
！安全注意事项请仔细阅读该手册，以便能实现软起动器的最佳性能，改变软起动器的调整值或设置，会影响软起动器的功能与性能，必须有专业人员对软起动器的参数进行更改，避免出现问题。
只有专业技术人员允许安装NKR2。
必须保证电动机与NKR2功率匹配合适，安装时，请务必按用户手册操作章程操作。
不允许软起动器输出端接电容器，否则会损坏软起动器。
NKR2安装后请将输入和输出端的铜线鼻用绝缘胶带包好。
远程控制时必须锁定键盘控制。
软起动器外壳请牢固接地。
维修设备时，必须断开进线电源。
尽管本手册编写非常认真仔细，但诺克公司不能保证手册不存在小错误：在本文中说明的产品可能会随时对技术和操作方法进行修改，这在合同中无法加以考虑。
目录1. 使用前有关事项2. 安装和连接1-1 到货检查、1-2产品外观2-1 使用环境、2-2安装方法2-3连接2-4主电路和接地端子连接2-5软起动器主电路连接图2-6控制端子连接2-7端子配置图 2-8一、二次接线图4. 键盘面板5. 基本功能6. 功能选择详细说明6-1显示方式和控制方式的设定6-2输出继电器动作和时刻6-3自动重起动功能设置9-1 保护功能说明9-2 保护功能设定9-3 保护脱扣曲线10. 保护动作11. 故障诊断12. 起动模式12-1 限电流起动模式、12-2电压斜坡起动12-3 突跳起动、12-4电流斜坡起动模式12-5 电压限流双闭环起动、12-6软停机、12-7自由停机13. 外形尺寸14. 应用范围15. 特殊应用16. 外围器件选用表17. 附录3-1 运行前检查准备、3-2运行方法112-82345678991011121212131414-16141516171819-2119202122-2324242526133. 运行7. 操作步骤8. 帮助信息9. 保护功能1. 使用前有关事项收到您订购的设备后，请开箱检查以下各项如发现产品有问题或不符合您订的规格，请与您订购设备的代理商或就近的诺克办事处联系。
指针式推拉力计说明书
南北潮商城 ｜ ｗｗｗ．ｎｂｃｈａｏ．ｃｏｍ
300N 30kg 30N 3kg 2.0N 0.2kg
200N 20kg 20N 2kg 1.0N 0.2kg
NK-50 NK-100 NK-200 NK-300 NK-500
中 文 … …6
500N 50kg 50N 5kg 2.5N 0.5kg
6、 其 他 为了使测力计能测得准确及稳定的测量值， 请务必充分利用附带的夹具。用户如要制造 适合测量用的夹具时，请参考右图所示的推 拉杆连接尺寸。
M6 φ6
7、 保 养 和 维 修 ( 1 ) 请勿施加超过测力计最大负荷的荷重，以名损坏仪器。 ( 2 ) 请按规定妥善保管和存放,避免将测力计保管或使用于低温、 低湿或高温，高湿及有腐蚀介质的场所，以免损坏仪器。 ( 3 ) 发生故障请与原购买处或本公司联系。 ( 4 ) 本产品自销售之日起一个月内，在正常使用及外观无破损情 况下出现产品质量问题，客户凭销售发票原件、有效保修卡 及完整包装到原购买处或本司更换相同型号规格的产品， 更换以后的产品延续原产品的保修期限和条款。 ( 5 ) 本产品自销售之日起一年内，在正常使用情况下，出现非人 为故障属保修范围 ( 用户自行拆机或在其他维修点维修后本 公司不予保修 ) ，客户凭销售发票原件、保修卡到原购买处 或本公司，可获本公司免费保修。 ( 6 ) 对超过保修期限的产品，客户可向原购买处查询维修事宜或 与本公司联系，由本公司提供有偿维修。 ( 7 ) 本公司保留随时修改说明书的权利，修改时难以一一告知， 敬请原谅。
40lb 18kg
4lb 2kg
0.2lb 0.2kg
100lb 45kg
10lb 5kg
0.5lb 0.5kg
富士通ETERNUS DX60 S2磁盘存储系统说明书
FUJITSU ETERNUS DX60 S2 磁盘存储系统经济型存储ETERNUS DX S2磁盘存储系统Fujitsu（富士通）第二代ETERNUS DX 磁盘存储系统ETERNUS DX S2可为动态基础架构提供灵活的数据保护。
经验证，企业有能力为所有类别的IT基础架构数据资产提供保护。
冗余组件、RAID保护和内嵌数据保护可提供最佳的系统可靠性以确保维护业务持续性。
ETERNUS DX S2型号是综合型磁盘存储平台，其卓越的扩展性能满足数据急剧增长的需求并带来最佳性能。
可在全部型号中自由选择模块化磁盘存储和最先进的连接性，并且可通过选择不同的性能与总体拥有成本来获得最灵活的配置。
统一标准的ETERNUS SF存储管理软件实现单点管理，有利于整个ETERNUS DX系列的数据保护和高效操作。
尤其在虚拟IT环境中，ETERNUS SF能以最少的管理投入获得强大的ETERNUS DX 磁盘存储，实现了两者之间的完美集成。
ETERNUS DX60 S2ETERNUS DX60 S2可为用户带来可靠的运行体验，价格经济实惠，是中小型IT环境的最佳选择。
管理软件（无需额外付费）可减少管理投入成本和确保数据得到保护。
其可灵活地支持多种网络连接和磁盘类型，带来优化的成本和性能选择。
该产品针对中小型企业环境而设计，可提供卓越的存储容量扩展性能，可扩展至72TB，为未来的增长预留足够的空间。
其可为整合分散数据和小型服务器虚拟项目提供完美的存储解决方案。
特性及优势以实惠的价格提供可靠的运行体验实惠的价格带来：■高性能■丰富的数据保护功能■经过企业验证的入门级存储性能适用于中小型IT环境■便于安装、配置、操作和维护最适用于：■存储整合及虚拟化■数据稳定增长的中等容量需求免费ETERNUS SF Express存储管理■免费提供功能丰富的全套管理服务■单点管理■简单、高效的操作技术规格一般规格 2.5”基本型 3.5”基本型单控制器双控制器单控制器双控制器RAID等级0, 1, 1+0, 5, 5+0, 6主机接口光纤通道 (4/2/1 Gb/s)iSCSI (1 Gb/s / 100Mb/s)SAS (3 Gb/s)控制器数量 1 2 1 2 主机接口数 2 4 2 4 主机数量光纤通道≤32 ≤64 ≤32 ≤64iSCSI ≤32 ≤64 ≤32 ≤64SAS ≤2 ≤4 ≤2 ≤4缓存容量 1 GB 2 GB 1 GB 2 GB驱动器柜数量－≤1驱动器数量≤24 (2.5”CE) ≤24 (3.5”CE +3.5”DE)存储容量物理容量≤21.6 TB ≤72.0 TB逻辑容量≤16.0 TB ≤53.4 TB驱动器 3.5” SAS磁盘驱动器600 GB/450 GB/300 GB (15,000 rpm)近线SAS磁盘驱动器 3 TB/2 TB/1 TB (7,200 rpm)- 备注 3.5”驱动器仅能用于3.5”驱动器柜SAS磁盘驱动器900 GB/600 GB/450 GB/300 GB (10,000 rpm)2.5”- 备注 2.5” 驱动器仅能用于2.5” 驱动器柜驱动器接口串行连接SCSI (3 Gbit/s)冗余 RAID控制器无有无有风扇有有有有电源有有有有LUN数量≤512LUN容量≤32 TB快照数量标准（内置）8最大值（可选项）512- 备注可购买当地许可证副本，获得最大快照数拷贝数量8远程复制功能无基本型安装规格 2.5” 基本型 3.5”尺寸(宽x 深 x 高) 标准483 x 650 x 88 mm (2U)19 x 25.5 x 3.5 in. [2U]最大483 × 650 × 88 mm (2U) 483 × 650 ×176 mm (4U)19 × 25.5 × 3.5 in. [2U] 19 × 25.5 × 7 in.[4U]服务区域前≥800 mm (31.5 in.)后≥800 mm (31.5 in.)最大重量35 kg（单柜35 kg） 70千克（单柜35 kg）电源电压AC 100 – 120 V / AC 200 – 240 V相位单相频率50 Hz / 60 Hz基本型安装规格（接上页） 2.5” 基本型 3.5” 最大能耗AC 100 - 120V CE 510 W (520 VA) 440 W (450 VA)DE －370 W (380 VA)最大值－810 W (830 VA)AC 200 - 240V CE 500 W (510 VA) 430 W (440 VA)DE －370 W (380 VA)最大值－800 W (820 VA)最大热量AC 100 - 120V 1,840 kJ/h (1,740 BTU/h) 2,920 kJ/h (2,760 BTU/h)AC 200 - 240V 1,800 kJ/h (1,700 BTU/h) 2,880 kJ/h (2,720 BTU/h)环境条件温度10 – 40°C (工作温度)50 – 104°F (工作温度)湿度20 – 80% 相对湿度(工作湿度)海拔3,000 m10,000 ft.运行环境数据中心FTS 04230指南（安装地点）运行环境链接/dl.aspx?id=e4813edf-4a27-461a-8184-983092c12dbe支持RAID等级RAID 0 在多个磁盘驱动器上将数据分段，不推荐RAID 1 镜像磁盘驱动器RAID 1+0 数据镜像，之后在多个磁盘驱动器将数据分段RAID 5 用分散的奇偶校验分段RAID 5+0 RAID 5阵列，再次在多个磁盘驱动器上将数据分段RAID 6 用分散的双奇偶校验分段管理接口以太网(1000 Base-T / 100 Base-TX / 10 Base-T)支持的协议SNMP (版本1, 2C, 3)，SMI-S 1.4管理网络环境，CLI (命令行界面), ETERNUS SF Express支持ETERNUS SF Express的操作系统操作管理服务器Microsoft® Windows Server®2008 Standard (32-bit) (64-bit)包括R2Microsoft® Windows Server® 2008 Enterprise (32-bit) (64-bit)包括R2Microsoft® Windows Server® 2008 Datacenter (32-bit) (64-bit)包括R2操作管理客户端Microsoft® Windows® 7 Home PremiumMicrosoft® Windows® 7 ProfessionalMicrosoft® Windows® 7 UltimateWindows Vista® Home BasicWindows Vista® Home PremiumWindows Vista® BusinessWindows Vista® EnterpriseWindows Vista® UltimateWindows® XP Home EditionWindows® XP ProfessionalMicrosoft® Windows Server®2008 Standard (32-bit) (64-bit)Microsoft® Windows Server® 2008 Enterprise (32-bit) (64-bit)Microsoft® Windows Server® 2008 Datacenter (32-bit) (64-bit)选项许可证ETERNUS SF当地许可证副本噪声干扰 2.5”基本型 3.5”基本型 声功率级 (LWAd) 5.9 B 6.0 B 声压级 (LpAm) 42.0 dB(A) 43.5 dB(A) - 备注 根据ISO7779使用单柜进行测量，根据ISO9296进行说明联系方式富士通（中国）信息系统有限公司地 址：上海市浦东新区花园石桥路33号花旗集团大厦11楼 电 话: (86 21) 5887 1000 传 真: (86 21) 5877 5286e-mail:********************.com(产品信息)******************.com(渠道招募)网 站: 2011-09-14 CN-ZH维护与支持服务 产品基本保修得到完美扩展，以获得最佳运行性能。
爱台顿Moeller系列A-PKZ0短路释放器说明说明书
Eaton 073195Eaton Moeller® series A-PKZ0 Shunt release (for power circuit breaker), 120 V 60 Hz, Standard voltage, AC, Screw terminals, For use with: Shunt release PKZ0(4), PKEGeneral specificationsEaton Moeller® series PKZ Shunt release073195A-PKZ0(120V60HZ)401508073195568 mm 90 mm 24 mm 0.131 kgUL 508UL Category Control No.: NLRV IEC/EN 60947-4-1 CSAUL File No.: E36332 UL CECSA Class No.: 3211-05 CSA-C22.2 No. 14 CSA File No.: 165628Product NameCatalog Number Model Code EANProduct Length/Depth Product Height Product Width Product Weight CertificationsScrew connectionAccessories Motor safety switch Motor protective circuit-breaker ACCan be fitted to left side of the motor protection switch-25 °C55 °C1 x (0.75 - 2.5) mm²2 x (0.75 - 2.5) mm²2 x (18 - 14) 1 x (18 - 14)0.7 - 1.1 x Us (AC)0.7- 1.1 x Us (alternating voltage) 0.7- 1.1 x Us (DC)42 V480 V24 V250 V0.7 - 1.1 x Us (AC)0.7- 1.1 x Us (alternating voltage) 0.7- 1.1 x Us (DC)Electric connection type Product category Suitable for Used withVoltage type Mounting positionAmbient operating temperature - min Ambient operating temperature - max Terminal capacity (solid/flexible with ferrule)Terminal capacity (solid/stranded AWG)Operational voltage Rated operational voltage (Ue) at AC - min Rated operational voltage (Ue) at AC - max Rated operational voltage (Ue) at DC - min Rated operational voltage (Ue) at DC - max Operational voltage Number of contacts (change-over contacts)Number of contacts (normally closed contacts)0 V0 V 120 V 120 V 0 V0 V 05 VA, Pull-in power, Coil in a cold state and 1.0 x Us 5 VA, Pull-in power, Coil in a cold state and 1.0 x Us 3 VA, Coil in a cold state and 1.0 x Us3 VA, Coil in a cold state and 1.0 x Us0 W0 W0 W0 A0.5 WMeets the product standard's requirements. Meets the product standard's requirements. Meets the product standard's requirements. Meets the product standard's requirements. Meets the product standard's requirements.Motor Starters in System xStart - brochureMotor-Protective Circuit-Breaker PKE - brochurePKE – Communication module Modbus RTUProduct Range Catalog Switching and protecting motorsDA-DC-00004545.pdfDA-DC-00004246.pdfDA-DC-00004109.pdfDA-DC-00003914.pdfDA-DC-00004069.pdfDA-DC-00004230.pdfDA-DC-00004108.pdfDA-DC-00004244.pdfDA-DC-00004245.pdfDA-DC-00004544.pdfDA-DC-00004601.pdfDA-DC-00004206.pdfDA-DC-00004316.pdfDA-DC-00004892.pdfRated control supply voltage (Us) at AC, 50 Hz - min Rated control supply voltage (Us) at AC, 50 Hz - max Rated control supply voltage (Us) at AC, 60 Hz - min Rated control supply voltage (Us) at AC, 60 Hz - max Rated control supply voltage (Us) at DC - minRated control supply voltage (Us) at DC - max Number of contacts (normally open contacts)Power consumption, pick-up, 50 HzPower consumption, pick-up, 60 HzPower consumption, sealing, 50 HzPower consumption, sealing, 60 HzEquipment heat dissipation, current-dependent PvidHeat dissipation capacity PdissHeat dissipation per pole, current-dependent PvidRated operational current for specified heat dissipation (In) Static heat dissipation, non-current-dependent Pvs10.2.2 Corrosion resistance10.2.3.1 Verification of thermal stability of enclosures10.2.3.2 Verification of resistance of insulating materials to normal heat10.2.3.3 Resist. of insul. mat. to abnormal heat/fire by internal elect. effects10.2.4 Resistance to ultra-violet (UV) radiation BrochuresCataloguesCertification reports Declarations of conformityDoes not apply, since the entire switchgear needs to be evaluated.Does not apply, since the entire switchgear needs to be evaluated.Meets the product standard's requirements.Does not apply, since the entire switchgear needs to be evaluated.Meets the product standard's requirements.Does not apply, since the entire switchgear needs to be evaluated.Does not apply, since the entire switchgear needs to be evaluated.Is the panel builder's responsibility.Is the panel builder's responsibility.Is the panel builder's responsibility.Is the panel builder's responsibility.Is the panel builder's responsibility.The panel builder is responsible for the temperature rise calculation. Eaton will provide heat dissipation data for the devices.Is the panel builder's responsibility. The specifications for the switchgear must be observed.Is the panel builder's responsibility. The specifications for the switchgear must be observed.DA-DC-00004882.pdfDA-DC-00004886.pdfDA-DC-00004887.pdfDA-DC-00004915.pdfDA-DC-00004951.pdfDA-DC-00004910.pdfDA-DC-00004912.pdfDA-DC-00004935.pdfDA-DC-00004787.pdfDA-DC-00004888.pdfDA-DC-00004890.pdfDA-DC-00004916.pdfDA-DC-00004885.pdfDA-DC-00004851.pdfDA-DC-00004921.pdfDA-DC-00004878.pdfDA-DC-00004883.pdfDA-DC-00004918.pdfDA-DC-00004917.pdfDA-DC-00004960.pdfDA-DC-00004962.pdfDA-DC-00004952.pdfDA-DC-00004937.pdfDA-DC-00004913.pdfDA-DC-00004884.pdfDA-DC-00004945.pdfDA-DC-00004919.pdfDA-DC-00004880.pdfDA-DC-00004961.pdfDA-DC-00004891.pdfDA-DC-00004920.pdfDA-DC-00004881.pdfDA-DC-00004953.pdfDA-DC-00004889.pdfDA-DC-00004914.pdfDA-DC-00004944.pdfeaton-manual-motor-starters-release-u-pkz0-accessory-dimensions.eps eaton-manual-motor-starters-release-u-pkz0-accessory-3d-drawing.eps10.2.5 Lifting10.2.6 Mechanical impact10.2.7 Inscriptions10.3 Degree of protection of assemblies10.4 Clearances and creepage distances10.5 Protection against electric shock10.6 Incorporation of switching devices and components10.7 Internal electrical circuits and connections10.8 Connections for external conductors10.9.2 Power-frequency electric strength10.9.3 Impulse withstand voltage10.9.4 Testing of enclosures made of insulating material10.10 Temperature rise10.11 Short-circuit rating10.12 Electromagnetic compatibility DrawingsEaton Corporation plc Eaton House30 Pembroke Road Dublin 4, Ireland © 2023 Eaton. All rights reserved. Eaton is a registered trademark.All other trademarks areproperty of their respectiveowners./socialmediaThe device meets the requirements, provided the information in the instruction leaflet (IL) is observed.eaton-manual-motor-starters-shunt-releases-u-pkz0-accessory-3d-drawing.epsDA-CE-ETN.A-PKZ0(120V60HZ)IL03402034ZVideo Motor Protective Circuit Breaker PKEWIN-WIN with push-in technologyDA-CD-a_pkzDA-CS-a_pkzeaton-manual-motor-starters-release-a-pkz0-shunt-release-wiring-diagram.eps10.13 Mechanical functioneCAD modelInstallation instructionsInstallation videosmCAD modelWiring diagrams。
便携式复合气体检测仪说明书
© Copyright SAFETAK
1
GC60 说明书
目录
1 GC60 便携式复合气体检测仪介绍..................................................................................... 3 1.1 概述.................................................................................................................................. 3 1.2 检测原理.......................................................................................................................... 3 1.3 防爆标志.......................................................................................................................... 3
4.2.1 显示 (LCD 屏幕) ...................................................................................................... 7 4.2.2 按键........................................................................................................................... 8 4.2.3 报警........................................................................................................................... 8 5 操作........................................................................................................................................ 8 5.1 开机.................................................................................................................................. 8 5.2 关机................................................................................................................................ 10 5.3 维护菜单........................................................................................................................ 11 5.3.1 进入维护菜单 ......................................................................................................... 11 5.3.2 报警点编辑 ............................................................................................................. 13 5.3.2 时间设置 ................................................................................................................. 14 5.3.2 标定 ......................................................................................................................... 15 5.4 背景灯............................................................................................................................ 17 5.5 供电方式........................................................................................................................ 17 5.5.1 电池供电 ................................................................................................................. 17 5.6 关于携带 ........................................................................................................................ 18 6 维护与服务.......................................................................................................................... 18 6.1 维护................................................................................................................................ 18 6.2 服务................................................................................................................................ 18 6.2.1 电池更换........................................................................................................................................................................................................ 19 7 质量保证.............................................................................................................................. 19 8 技术数据.............................................................................................................................. 20 9 性能参数.............................................................................................................................. 21
z2s6 样本说明文档
4 用于阀安装的通孔
5 油口 A，B，P 和 T 带相同的密封圈
6 定位销 ISO 8752-3x8-St（仅限 "/62" 型号）
7 螺塞 SW22
阀安装螺钉（单独订购） 4 颗内六角螺钉 ISO 4762 - M5 - 10.9 4 颗内六角螺钉 N10-24 UNC
注意： 必须根据在截止阀上下安装的组件来选择叠加阀板的阀安装螺钉长度。 根据应用，必须对螺钉类型和紧固扭矩进行调整使其适合各种情况。 有关螺钉所需长度的信息，请咨询力士乐。
注意！ 理想密封材料的选择（请参阅第 2 页的订货代码）也取决 于所用液压油的类型。
Bosch Rexroth AG，RC 21548，版本：2013-06
单向阀 | Z2S 7/10
特性曲线 （使用 HLP46 测量，ϑ油 = 40 ± 5 °C [104 ± 9 °F]）
压差（bar）[psi] →
安装和连接尺寸不变6x06不耐腐蚀的表面无代码密封材料07nbr密封件无代码fkm密封件密封材料选择取决于工作参数液压油温度等定位孔08不带定位孔无代码带定位孔60具有符合iso87523x8st的定位孔和定位销62特殊型号09无特殊型号无代码通过外部油口g14控制开启仅限型号so40带预开口so55控制阀芯卸载至油口so60带预开口并通过通道控制开启so150符号示例请参阅第10明文形式的更多详细信息01020304050607080910z2s可应要求提供耐腐蚀表面
注意事项
单向阀 | Z2S 11/10
Bosch Rexroth AG Hydraulics Zum Eisengießer 1 97816 Lohr am Main, 德国 电话 +49 (0) 93 52 / 18-0 documentation@boschrexroth.de www.boschrexroth.de
STN1NK60Z中文资料
1/14September 2005STD1LNK60Z-1STQ1NK60ZR - STN1NK60ZN-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223Zener-Protected SuperMESH™MOSFETTable 1: General Features■TYPICAL R DS (on) = 13Ω■EXTREMELY HIGH dv/dt CAPABILITY ■ESD IMPROVED CAPABILITY ■100% AVALANCHE TESTED■NEW HIGH VOLTAGE BENCHMARK ■GATE CHARGE MINIMIZEDDESCRIPTIONThe SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS-FETs including revolutionary MDmesh™ products.APPLICATIONS■AC ADAPTORS AND BATTERY CHARGERS ■SWITH MODE POWER SUPPLIES (SMPS)Table 2: Order CodesFigure 2: Internal Schematic DiagramTYPE V DSS R DS(on)I D Pw STQ1NK60ZR STD1LNK60Z-1STN1NK60Z600 V 600 V 600 V< 15 Ω< 15 Ω< 15 Ω0.3 A 0.8 A 0.3 A3 W 25 W 3.3 W21IPAK TO-92 (Ammopack)SALES TYPE MARKING PACKAGE PACKAGINGSTQ1NK60ZR Q1NK60ZR TO-92BULK STQ1NK60ZR-AP Q1NK60ZR TO-92AMMOPAK STD1LNK60Z-1D1LNK60Z IPAK TUBE STN1NK60ZN1NK60ZSOT-223TAPE & REELRev. 6STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z2/14Table 3: Absolute Maximum ratings( ) Pulse width limited by safe operating area(1) I SD ≤0.3A, di/dt ≤200A/µs, V DD ≤ V (BR)DSS , T j ≤ T JMAX.Table 4: Thermal Data(#) When mounted on 1 inch² Fr-4 board, 2 Oz CuTable 5: Avalanche CharacteristicsTable 6: Gate-Source Zener DiodePROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.Symbol ParameterValue UnitIPAKTO-92SOT-223V DS Drain-source Voltage (V GS = 0)600V V DGR Drain-gate Voltage (R GS = 20 k Ω)600V V GS Gate- source Voltage± 30V I D Drain Current (continuous) at T C = 25°C 0.80.30.3A I D Drain Current (continuous) at T C = 100°C 0.50.1890.189A I DM ( )Drain Current (pulsed) 3.2 1.2 1.2A P TOT Total Dissipation at T C = 25°C 253 3.3W Derating Factor0.240.0250.026W/°C V ESD(G-S)Gate source ESD(HBM-C=100pF, R=1.5K Ω)800V dv/dt (1)Peak Diode Recovery voltage slope 4.5V/ns T j T stgOperating Junction Temperature Storage Temperature-55 to 150°C IPAKTO-92SOT-223Rthj-case Thermal Resistance Junction-case Max 5----°C/W Rthj-amb Thermal Resistance Junction-ambient Max 10012037.87(#)°C/W Rthj-leadThermal Resistance Junction-lead Max--40--°C/W T lMaximum Lead Temperature For Soldering Purpose275260260°CSymbol ParameterMax ValueUnit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)0.8A E ASSingle Pulse Avalanche Energy(starting T j = 25 °C, I D = I AR , V DD = 50 V)60mJSymbol ParameterTest Conditions Min.Typ.Max.Unit BV GSOGate-Source Breakdown VoltageIgs=± 1mA (Open Drain)30V3/14STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60ZELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)Table 7: On /OffTable 8: DynamicTable 9: Source Drain DiodeNote: 1.Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.2.Pulse width limited by safe operating area.3.C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS .Symbol ParameterTest Conditions Min.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 1 mA, V GS = 0600V I DSSZero Gate VoltageDrain Current (V GS = 0)V DS = Max Rating V DS = Max Rating, T C = 125 °C 150µA µA I GSS Gate-body Leakage Current (V DS = 0)V GS = ± 20V±10µA V GS(th)Gate Threshold Voltage V DS = V GS , I D = 50 µA 33.754.5V R DS(on)Static Drain-source On ResistanceV GS = 10V, I D = 0.4 A1315ΩSymbol ParameterTest Conditions Min.Typ.Max.Unit g fs (1)Forward Transconductance V DS = V , I D = 0.4 A0.5S C iss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25V, f = 1 MHz, V GS = 09417.62.8pF pF pF C oss eq. (3)Equivalent Output Capacitance V GS = 0V, V DS = 0V to 480V 11pF t d(on)t r t d(off)t f Turn-on Delay Time Rise TimeTurn-off-Delay Time Fall TimeV DD = 300V, I D = 0.4 A R G = 4.7Ω V GS = 10 V (see Figure 21) 5.551328ns ns ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD = 480V, I D = 0.8 A,V GS = 10V(see Figure 25)4.912.76.9nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (2)Source-drain CurrentSource-drain Current (pulsed)0.82.4A A V SD (1)Forward On Voltage I SD = 0.8A, V GS = 0 1.6V t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 0.8 A, di/dt = 100A/µs V DD = 20V, T j = 25°C (see Figure 23)1352163.2ns nC A t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD = 0.8 A, di/dt = 100A/µs V DD = 20V, T j = 150°C (see Figure 23)1402243.2ns nC ASTD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z4/14Figure 3: Safe Operating Area for IPAKFigure 6: Thermal Impedance for IPAK5/14STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60ZFigure 9: Output CharacteristicsFigure 12: Transfer CharacteristicsFigure 14: Capacitance VariationSTD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z6/14Figure 15: Normalized Gate Thereshold Volt-Figure 18: Normalized On Resistance vs Tem-STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60ZFigure 21: Unclamped Inductive Load Test Cir-cuitFigure 22: Switching Times Test Circuit For Resistive Load Figure 23: Test Circuit For Inductive Load Switching and Diode Recovery TimesFigure 24: Unclamped Inductive WafeformFigure 25: Gate Charge Test CircuitSTD1LNK60Z-1 - STQ1NK60ZR - STN1NK60ZIn order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: 8/14STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z9/14STD1LNK60Z-1 - STQ1NK60ZR - STN1NK60Z10/14Table 10: Revision HistoryDate Revision Description of Changes 19-Mar-20031First Release15-May-20032Removed DPAK09-Jun-20033Final Datasheet17-Nov-20044Inserted SOT-223.15-Feb-20055Modified Curve 407-Sep-20056Inserted Ecopack indicationInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a registered trademark of STMicroelectronicsAll other names are the property of their respective owners© 2005 STMicroelectronics - All Rights ReservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America。
Z2系列直流电机
Z2系列直流电机Z2系列直流电动机是我国60年代研制开发的中小型直流电动机，具有性能可靠、价格便宜的优点，目前仍然广泛用于印染机械、包装机械、塑料机械等行业。
一、技术参数Z2系列电动机（220伏，1500转/分）电动机还可以制成额定电压为110V、160V、340V、440V、460V，额定转速为3000转、1000转、750转、600转等派生系列电动机，详细资料与本公司联系。
Z2系列发电机（115伏，1450转/分）发电机还可以制成115V 2850转/分、230V 2850转/分、230V 1450转/分等电压及转速等级的电机武汉索特南洋电机有限公司拥有雄厚的技术力量，先进的生产工艺装备，质量检验体系和管理水平。
并多次获得用户单位和地区的好评，获得“信用AAA”和“守合同重信用单位”等信誉称号。
武汉索特南洋电机有限公司的理念:提供专用的产品，提供专业的服务，打造专注的团队，成就专享的人生。
我们将恪守满足需要创品牌，诚信经营，求发展的方针，竭诚为客户提供满意的产品和专业的服务。
根据用户需要，可配置多速、高效、直流等多种电机，并可装置制动器或单向停止器。
我武汉索特南洋电机有限公司是专业电机制造商，主要生产销售：水冷电机、细纱机电机、炉用电机、变频电机、防爆电机、辊道电机、直流电机、起重电机、特种电机，以及各种非标产品设计与生产。
该系列产品适用于高温环境、变频调速系统。
其特点是调速范围广、运行稳定、可靠性高、运行效率高、外观设计美观。
产品具有独特的冷却系统可保证电动机在外界环境温度很高的情况下长期运行时的稳定工作，能耐高温高湿、防腐等特点。
广泛应用于军工、航天、污水处理、冶金、轻工、化工、钢铁、水泥、印刷、制糖、食品、橡胶、医药、建筑、起重、运输、木工机械、仪器仪表等行业。
武汉索特南洋电机有限公司力求以最优的质量，最快的速度，最有效的方式竭诚为用户服务，诚挚地与各界朋友合作，共谋发展。
武汉南洋电机联系方式电话：400-0988-308（全国免费）************传真：************e-mail:*****************地址：武汉市汉口沿江大道160号武昌火车站乘车线路：乘坐402路公交至沿江大道兰陵路站下，步行至兰陵路口往里100米即到汉口火车站乘车线路：乘坐603、38路公交至沿江大道兰陵路站下，步行至兰陵路口往里100米即到武汉市内公交路线：526、588、721、523、601、502、603、801、802等公交至沿江大道兰陵路站下，步行至兰陵路口往里100米即到以上资料来源/部分电机参数商品描述：YTAE变频系列电磁制动三相异步电动机是按JB/T6456-92标准制造的带交流圆盘式电磁制动器的三相异步电动机。
RCC-a中文版资料S
基于STD1LNK60Z的手机电池充电器设计By john zhang[zxd414@]引言本应用笔记介绍了如何逐步的设计基于RCC的手机电池充电器。
RCC对自振荡反激式是必须的，工作于断续电流模式和连续电流模式之间，并对输出二极管不会产生很大的反向恢复应力。
RCC控制的实现靠利用分立器件来控制峰值电流模式，故与传统的PWM IC的反激变换齐相比，整个RCC的成本相对较低。
因此，RCC在工业和家用的低功率设备中因其简单和高性价比而广泛应用。
图1、基于STD1LNK60Z的RCC印刷电路板反面正面1、功率变压器设计和计算*规格-Vac=85~265V*线频率：50~60Hz-Vo=5V-Io=0.4A考虑到瞬时负载，最大输出电流设为：Io(max)=1.2Io=0.48A1.1 开关频率系统的开关频率是变化的(RCC开关频率随着输入电压和输出负载而变化)，因此在选择开关频率是存在一定自由度。
但是，开关频率至少在25kHz，以减小可闻噪声。
高开关频率可以减小变压器的噪声，但是增加了功率器件的开关损耗。
最低输入电压和满载时最小开关频率和最大占空比克表示为如下：fs(min)=50kHz, Dmax=0.5。
1.2 STD1LNK60Z MOSFET匝比MOSFET的最大漏极电压必须在击穿电压以下。
最大漏极电压是下面电压的和:● 输入母线电压● 二次侧的反激电压，以及● 浪涌电压(在最大输入电压时由原边寄生电感引起)。
最大输入母线电压为375V，STD1LNK60Z MOSFET的击穿电压是600V。
假定输出二极管的压降为0.7V，浪涌电压为95V, 余量至少是50V, 反激电压由下式给出：匝比为：式中，V fl =二次侧在原边产生反激电压V(BR)DSS = MOSFET击穿电压V margin = 电压余量V DC(max) = 最大输入母线电压V spk = 浪涌电压V f = 输出二极管压降N = 匝比N p = 原边绕组匝数N s = 二次侧/副边绕组匝数1.3 原边电流●原边峰值电流表达如下:●原边均方根(RMS)电流表达如下：式中，I ppk = 原边峰值电流V O = 输出电压I O(max) = 最大输出电流η= 效率, 等于0.7D max = 最大占空比V DC(min) = 最小输入母线电压I prms = 原边RMS电流1.4 原边电感原边电感量表示为：式中,V DC (min) = 最小输出DC电压f s (min) = 最小开关频率D max = 最大占空比I ppk = 原边峰值电流例如，若果Lp选为5.2mH, 最低开关频率为:1.5 磁芯尺寸通常，基于面积积AP选择磁芯，AP是有效磁芯截面积乘上可用的窗口面积。
TC600中文说明书(II)
TCH-600氧氮氢联测仪中文说明书力可公司1介绍1 介绍☐插图说明……………………………………………………..………………..…1－12 ☐保证书……..………………..………………..………………..…………………1－15 注意事项.………………….………………….………………….………………1－16 警告事项.………………….………………….………………….………………1－16 ☐警告符号.………………….………………….………………….………………1－17 ☐和其它设备的接口.………………….………………….………………….……1－18 ☐主设备及附件列表……………………………………………………..……… 1－20 ☐选用件…..………………………..……………………………..……....……… 1－21 ☐部件和附件列表…………………………………..……………………..………1－22 ☐技术规格……………………………………………………………..…………...1－26 ☐即时手册…………………………………………………………..…………...….1-282 安装☐插图说明……………………………………………………..………………..… 2－2 ☐抬举和移动仪器……………………………………………..………………..… 2－3 ☐仪器安装…………………………………………………………………..………2－4 ☐设备要求…………………………………………………………………..………2－7 ☐电源安装…………………………………………………………………..………2－9 国内电源安装……………………………………………………………..………2－9 电源选择…………………………………………………………………..…… 2－10 国际电源安装……………………………………………………………..…… 2－12 交流电缆的技术规格……………………………………………………..…… 2－12 ☐电极炉冷却系统…………………………………………………………..…… 2－13 ☐入口气体净化试剂的安装………………………………………………..…… 2－15☐分析气体净化试剂的安装………………………………………………………………2－16 ☐氧气和水分吸收试剂管的安装…………………………………………………………2－18 ☐吸尘器的安装……………………………………………………………………………2－20 ☐计算机的安装……………………………………………………………………………2－21 LECO提供的计算………………………………………………………………………2－21 用户提供的计算………………………………………………………………………… 2－23 最低的计算机配置……………………………………………………………………… 2－23 3选用件安装☐插图说明…………………………………………………………………………………3－2 ☐天平的安装………………………………………………………………………………3－3 天平的设置………………………………………………………………………………3－3 天平初始化………………………………………………………………………………3－4 天平测试…………………………………………………………………………………3－5 ☐打印机……………………………………………………………………………………3－7 4系统设置☐插图说明…………………………………………………………………………………… 4－3 ☐控制及指示………………………………………………………………………………….4－4 ☐自动传送分析结果………………………………………………………………………….4－6 ☐维护计数值设定…………………………………………………………………………….4－8 维护计数值定义…………………………………………………………………………….4－9 ☐生成分析报告……………………………………………………………………………….4－10 ☐屏幕排版…………………………………………………………………………………….4－12 工具栏……………………………………………………………………………………… 4－12 状态栏……………………………………………………………………………………… 4－12 桌面栏……………………………………………………………………………………… 4－12 ☐分析表格设定……………………………………………………………………………… 4－13 表格内容定义……………………………………………………………………………… 4－14 ☐分析方法设定……………………………………………………………………………… 4－15 分析方法定义……………………………………………………………………………… 4－17 分析参数设定………………………………………………………………………… 4－17 元素参数设定………………………………………………………………………… 4－17 气标参数设定………………………………………………………………………… 4－18 炉子参数设定………………………………………………………………………… 4－19步进分析参数设定……………………………………………………………………… 4－21 ☐样品模板…………………………………………………………………………………… 4－23创建样品模板……………………………………………………………………………… 4－23 登录使用样品模板………………………………………………………………………… 4－24 ☐标样………………………………………………………………………………………… 4－25 标样定义…………………………………………………………………………………… 4－26 ☐系统设定…………………………………………………………………………………….4－27 系统设置的定义…………………………………………………………………………… 4－29 系统设置……………………………………………………………………………….4－29 天平设置……………………………………………………………………………….4－31 ☐传送格式…………………………………………………………………………………… 4－32 定义传送内容……………………………………………………………………………… 4－33 定义传送符号……………………………………………………………………………… 4－34 串行口……………………………………………………………………………………… 4－35 串行口定义…………………………………………………………………………… 4－36 预览传送数据……………………………………………………………………………… 4－37 ☐用户设定…………………………………………………………………………………… 4－38 添加用户…………………………………………………………………………………… 4－38 添加密码…………………………………………………………………………………… 4－39 指定用户功能……………………………………………………………………………… 4－40 ☐语言选择…………………………………………………………………………………… 4－415操作☐插图说明…………………………………………………………………………………… 5－5 ☐操作指南…………………………………………………………………………………… 5－6 分析前……………………………………………………………………………………… 5－7 分析后……………………………………………………………………………………… 5－8 使用后……………………………………………………………………………………… 5－8 ☐坩埚………………………………………………………………………………………5－9 标准坩埚…………………………………………………………………………………5－10 加热坩埚…………………………………………………………………………………5－10 高温坩埚…………………………………………………………………………………5－10 ☐电极清扫刷坩埚…………………………………………………………………………5－11 ☐样品制备…………………………………………………………………………………5－12 ☐样品种类…………………………………………………………………………………5－12屑状样品……………………………………………………………………………5－12粉末样品……………………………………………………………………………5－12胶囊样品……………………………………………………………………………5－12样品尺寸……………………………………………………………………………5－12 流动试剂…………………………………………………………………………………5－13 清洗及安装镍兰……………………………………………………………………5－13超高温纯净镍兰……………………………………………………………………5－13 Windows软件菜单……………………………….……………………………………… 5－14 文件菜单…………………………………….……………………………………………5－14 打印…………………………………….……………………………………………5－14 打印预览……………………………………………………………………………5－14打印设置……………………………………………………………………………5－14输入…………………………………….……………………………………………5－15 输出…………………………………….……………………………………………5－15 退出………….……………………………………………………………………….. 5－15 编辑菜单…………………………………….……………………………………………5－16 插入…………………………………….……………………………………………5－16 填充…………………………………………………………………………………5－16 剪切…………………………………….……………………………………………5－16 复制…………………………………….……………………………………………5－16 粘贴………….………………………………………………………………………5－16 视图菜单…………………………………….……………………………………………5－17 工具栏………………………………….……………………………………………5－17 状态栏………………………………………………………………………………5－17 第一行………………………………….……………………………………………5－17 分析栏………………………………….……………………………………………5－17 上一行………….……………………………………………………………………5－17 仪表盘…………….……………………………………………………………………5－18 峰值寻找……………………………………………………………………………… 5－18 氧化物分离（OxSep）………………………………………………………………..5－18 样品菜单…………………………………….……………………………………………5－19 登录…………………………………….……………………………………………5－19 天平…………………………………………………………………………………5－19 分析…………………………………….……………………………………………5－19 终止…………………………………….……………………………………………5－19传送…………………………………………………………………………………5－20删除…………………………………….……………………………………………5－20 设置菜单…………………………………….……………………………………………5－21 校正…………………………………….……………………………………………5－21空白…………………………………………………………………………………5－21漂移校正……………………………….……………………………………………5－21标样…………………………………….……………………………………………5－22方法………….………………………………………………………………………5－22计数器………………………………….……………………………………………5－22样品模板……………………………………………………………………………5－22 系统…………………………………….……………………………………………5－22用户…………………………………….……………………………………………5－22传送格式…….………………………………………………………………………5－23语言…………………………………….……………………………………………5－23自动调宽……………………………….……………………………………………5－23显示…………………………………………………………………………………5－23 诊断菜单…………………………………….……………………………………………5－24 环境监视……………………………….……………………………………………5－24环境监视表…………………………………………………………………………5－24 开关…………………………………….……………………………………………5－24漏气检查……………………………….……………………………………………5－24电磁阀……….………………………………………………………………………5－24自动装置……………………………….……………………………………………5－25电极炉………………………………………………………………………………5－25校正…………………………………….……………………………………………5－25网络…………………………………….……………………………………………5－25 维护菜单…………………………………….……………………………………………5－26 登录…………………………………….……………………………………………5－26显示日志文件………………………………………………………………………5－26 ☐登录试样……………………………………………………………………………………5－27 试样登录定义………………………………………………………………………………5－28 天平登录……………………………………………………………………………………5－28 ☐分析试样……………………………………………………………………………………5－29 ☐删除试样……………………………………………………………………………………5－30 ☐打印样品结果………………………………………………………………………………5－31☐传送结果……………………………………………………………………………………5－33 ☐重新计算结果………………………………………………………………………………5－34 ☐校正…………………………………………………………………………………………5－35 ☐空白校正……………………………………………………………………………………5－36 ☐标样校正……………………………………………………………………………………5－37 标样校正定义…………………………………………………………………………5－39☐漂移校正……………………………………………………………………………………5－40 ☐结果管理……………………………………………………………………………………5－41 在分析表中插入数据…………………………………………………………………5－41插入分析………………………………………………………………………………5－42在选择的表格中设置相同的值………………………………………………………5－42在分析表中选择第一行………………………………………………………………5－43在分析表中选择第分析行……………………………………………………………5－43在分析表中选择上一行………………………………………………………………5－43输入样品数据…………………………………………………………………………5－43输出样品数据…………………………………………………………………………5－44输出定义………………………………………………………………………………5－46 ☐使用剪贴板……………………………………………………………..…………………..5－47 剪切数据到剪贴板…………………………………………………..………………..5－47复制数据到剪贴板…………………………………………………..………………..5－47粘贴数据到剪贴板…………………………………………………..………………..5－47 ☐分析图形设置………………………………………………………………………………5－48 显示菜单………………………………………………………………………………5－48 选择过程…………………………………………………………………………5－48 ☐峰值寻找……………………………………………………………………………………5－50 图形菜单…………………………………………………………………………….. 5－51 图形菜单定义……………………………………………………………………5－51 打印图形…………………………………………………………………………….. 5－51峰值寻找方法建立……………………………………………………………………5－52 峰值寻找方法定义………………………………………………………………5－53☐氧化物分离（OxSep）………………...…………………………………..………5－54 氧化物分离图形………………...………………...…………………..………5－54 氧化物分离图形功能…………...…………..…………………..………5－55 打印图形………………...…………….………..………………..…………5－56氧化物分离方法建立………………...……………..………………..………5－57氧化物分离方法定义…………...……………..………………..………5－58典型方法的参数………………….……………………………………5－59系统设置………………...…………………………………………………5－60数据缓冲区数据移位定义………………….…………………..………5－616维护☐插图说明…………………………………………………………………………………… 6－2 ☐维护周期表………………………………………………………………………………….6－3 ☐空气过滤器清扫…………………………………………………………………………….6－5 ☐入口催化剂充填……………………………………………………………………………6－7 ☐分析气催化剂充填………………………………………………………………………… 6－8 ☐加样器过滤器……………………………………………………………………………….6－12 ☐登录周期维护……………………………………………………………………………….6－14 ☐下电极座和O型圈的更换…………………………………………………………………6－15 ☐炉子过滤器充填…………………………………………………………………………… 6－17 ☐汽缸密封O型圈和滑块……………………………………………………………………6－19 ☐落样块O型圈和落样块……………………………………………………………………6－21 ☐次级过滤器………………………………………………………………………………… 6－23 ☐检查日志文件……………………………………………………………………………… 6－25 ☐更新维护计数器…………………………………………………………………………… 6－267工作原理☐工作原理……………………………………………………………………………………..7－3 ☐大气压力……………………………………………………………………………………..7－5 ☐校正曲线选择………………………………………………………………………………..7－7 线性校正……………………………………………………………………………………..7－8 校正技巧………………………………………………………………………………..7－8 两次曲线校正………………………………………………………………………………..7－9 校正技巧………………………………………………………………………………..7－9 三次曲线校正………………………………………………………………………………..7－10 校正技巧………………………………………………………………………………..7－10 ☐比较水平……………………………………………………………………………………..7－11 ☐分步气体分析和程序升温………………………………………………………………7－13 概述…………………………………………………………………………………………..7－13 程序升温……………………………………………………………………………………..7－14 升温方法………………………………………………………………………………..7－14温度保持－氧………………………………………………………………………….7－15温度保持－步进………………………………………………………………………..7－15 ☐红外辐射、吸收和检测……………………………………………………………………..7－16 ☐热导检测………………...………………………………..………………..……7－17 气体的热导率………………...………………………………………..……7－188诊断☐环境监测……………………………………………………………………………………..8－3 环境监测表…………………………………………………………………………………..8－4 环境监测虚拟表……………………………………………………………………………..8－5 环境监测定义…………………………………………………………………………..8－6 ☐校正………………………………………………………………………………………… 8－8 催化炉……………………………………………………………………………………… 8－8 设置大气压力……………………………………………………………………………… 8－11 设置载气流量……………………………………………………………………………… 8－12 热导池电压校准………………...…………...………………………..………… 8－13 热导池电桥电压检查………………......……………………………..……8－13设置电桥………………...…………………………….………………..……8－14 备份校正…………………………………………………………………………………… 8－15 备份校正值…………………………………………………………………………… 8－16恢复校正值…………………………………………………………………………… 8－17 网络………………………………………………………………………………………… 8－18 网络定义……………………………………………………………………………… 8－20 ☐炉子诊断……………………………………………………………………………………8－21 ☐漏气检查…………………………………………………………………………………… 8－23 ☐电磁阀……………………………………………………………………………………… 8－25 ☐开关………………………………………………………………………………………… 8－26 开关状态…………………………………………………………………………………… 8－27 泵头温度……………………………………………………………………………… 8－27泵头压力……………………………………………………………………………… 8－27冷却水温度…………………………………………………………………………… 8－27电极温度……………………………………………………………………………… 8－27变压器温度…………………………………………………………………………… 8－27 ☐自动装置…………………………………………………………………………………… 8－29 自动清扫…………………………………………………………………………………… 8－29 自动加样…………………………………………………………………………………… 8－30☐电子调整…………………………………………………………………………………… 9－310维修☐插图说明…………………………………………………………………………………… 10－2 ☐分析气路图………………………………………………………………………………… 10－3 参考气流路径……………………………………………………………………………… 10－3 测量气流路径……………………………………………………………………………… 10－4 ☐冷却水槽的排水…………………………………………………………………………… 10－5 ☐漏气故障处理……………………………………………………………………………… 10－7 旁路系统…………………………………………………………………………………… 10－7 ☐报警信息…………………………………………………………………………………… 10－8 ☐可弯曲可更换的气路管…………………………………………………………………… 10－12 气路管的部件号…………………………………………………………………………… 10－12 ☐线性化……………………………………………………………………………………… 10－13 ☐电磁阀说明表图…………………………………………………………………………… 10－1511插图目录12目录13简图和附件列表图2－1………………………TCH－600后面板图……………………………………………… 2－8图2－2………………………电压选择图示………………………………………………………2－11图2－3………………………添加冷却水图………………………………………………………2－14图2－4………………………试剂管充填图………………………………………………………2－17图2－5………………………除氧气和水分试剂管帽的拆卸图…………………………………2－19图2－6………………………除氧气和水分试剂管的拆卸图……………………………………2－20图2－7………………………吸尘器的安装图……………………………………………………2－21图3－1………………………天平控制板…………………………………………………………3－6图3－2………………………天平装置……………………………………………………………3－6图4－1………………………控制器和显示器……………………………………………………4－5图5－1………………………坩埚类型……………………………………………………………5－9图6－1………………………空气过滤器的位置图………………………………………………6－6图6－2………………………催化炉试剂管的位置图……………………………………………6－10图6－3………………………催化炉试剂管的充填图……………………………………………6－11图6－4………………………加样头过滤器的更换图……………………………………………6－13图6－5………………………下电极座和O型圈的更换图………………………………………6－16图6－6………………………微粒过滤器的更换图………………………………………………6－18图6－7………………………活塞密封O型圈和滑块图…………………………………………6－20图6－8………………………落样块图……………………………………………………………6－22图6－9………………………次过滤器图……………………………………………………… 6－24图10－1………………………冷却水槽排水图………………………………………………… 10－6图10－2………………………TCH－600气路图……………………………………………… 10－17图10－3………………………漏气检查顺序图………………………………………………… 10－18图11－1………………………红外池和热导池恒温箱………………………………………… 11－4 图11－2………………………红外池装配图…………………………………………………… 11－5图11－3………………………红外检测器装配图……………………………………………… 11－6图11－4………………………热导池装配图…………………………………………………… 11－7图11－5………………………动态流量补偿器装配图………………………………………… 11－8图11－6………………………热交换器装配图………………………………………………… 11－9图11－7………………………冷却水闭环系统图……………………………………………… 11－10图11－8………………………液－液热交换装配图…………………………………………… 11－11图11－9………………………冷却水阀装配图………………………………………………… 11－12图11－10……………………催化炉加热装配图……………………………………………… 11－13图11－11……………………分析气催化炉加热装配图……………………………………… 11－14图11－12……………………入口气体净化装配图…………………………………………… 11－15图11－13……………………恒温箱加热装配图……………………………………………… 11－16图11－14……………………上电极装配图…………………………………………………… 11－17图11－15……………………下电极装配图…………………………………………………… 11－18图11－16……………………计量阀装配图…………………………………………………… 11－19图11－17……………………变压器装配图…………………………………………………… 11－20图11－18……………………微颗粒过滤器装配图…………………………………………… 11－21图11－19……………………底板和支架装配图……………………………………………… 11－22图11－20……………………交流电源分配板………………………………………………… 11－23图11－21……………………加样头过滤器…………………………………………………… 11－24图11－22……………………电源装配图……………………………………………………… 11－25图11－23……………………质量流量控制器装配图………………………………………… 11－26图11－24……………………冷却水泵装配图………………………………………………… 11－27图11－25……………………动力气模块装配图……………………………………………… 11－28图11－26……………………除氧气和水分试剂管模块装配图……………………………… 11－29图11－27……………………加样头装配图…………………………………………………… 11－30图11－28……………………下电极座装配图………………………………………………… 11－31图11－29……………………短电极刷装配图………………………………………………… 11－32图11－30……………………长电极刷装配图………………………………………………… 11－33图11－31……………………氦气连接装配图………………………………………………… 11－34图11－32……………………动力气连接装配图……………………………………………… 11－35图11－33……………………排水管装配图…………………………………………………… 11－36图11－34……………………电极炉装配图…………………………………………………… 11－37图11－35……………………视图A…………………………………………………………… 11－38图11－36……………………视图B…………………………………………………………… 11－39图11－37……………………视图C…………………………………………………………… 11－40图11－38……………………金属气路管更换指导…………………………………………… 11－41由美国密歇根州约瑟夫街LECO公司生产的仪器保证自安装之日起六个月在材料和工艺方面的保质期。
AZM 161SK_12 12RKED_024 电磁锁说明书
13.06.2016 02:53:34hDatasheet AZM 161SK12/12RKED024Solenoid interlock / AZM 161(Minor differences between the printed image and the original product may exist!)• Thermoplastic enclosure• Doubleinsulated• Interlock with protection against incorrect locking.• 130 mm x 90 mm x 30 mm • 6 Contacts • Long life• Large wiring compartment • Manual release, coverside • cable entries 4 M 16 x 1.5Ordering detailsProduct type description AZM 161SK12/12RKED024Article number 101187804EAN code 4030661350875eCl@ss 27272603ApprovalApprovalBG USA/CAN CCCClassificationStandards EN ISO 138491B 10d Opener (NC) 2.000.000Mission time 20 Y earsnoticeGlobal PropertiesProduct name AZM 161StandardsEN 6094751, BGGSET19Compliance with the Directives (Y/N) Y es Number of actuating directions3 pieceActive principle electromechanicalDuty cycle Magnet 100 %Materials Material of the housings Plastic, glassfibre reinforced thermoplastic, selfextinguishing Material of the contacts SilverHousing coating NoneWeight428 gMechanical dataActuating play in direction of actuation 5.5 mmDesign of electrical connection Screw connectionCable section Min. Cable section1 x 0,25 mm² Max. Cable section1 x 1.5 mm²Mechanical life> 1.000.000 operationsnotice All indications about the cable section are including theconductor ferrules.Emergency unlocking device (Y/N)NoManual release (Y/N)Y esEmergency release (Y/N)NoLatching force30 NPositive break force20 Npositive break travel10 mmClamping force F2000 NMax. Actuating speed2 m/sActuating frequency max. 1000 / hAmbient conditionsAmbient temperature Min. environmental temperature−25 °C Max. environmental temperature+60 °CProtection class IP67 to IEC/EN 60529Electrical dataDesign of control element Normally open contact (NO), Opener (NC) Switching principle Creep circuit elementNumber of auxiliary contacts2 pieceNumber of safety contacts4 piecePower to unlock Y esPower to lock NoRated control voltage U s24 VAC/DCPower consumption max. 10 WRated impulse withstand voltage U imp4 kVRated insulation voltage U i250 VThermal test current I the6 AUtilisation category AC15: 230 V / 4 A,DC13: 24 V / 2,5 ARequired rated shortcircuit current1000 AMax. fuse rating6 A gG Dfuse To DIN EN 602691ATEXExplosion protection categories for gases NoneExplosion protected category for dusts NoneMiscellaneous dataApplicationssliding safety guard,removable guard,hinged safety guardDimensionsDimensions of the sensor Width of sensor130 mm Height of sensor90 mm Length of sensor30 mmnoticeManual release• For maintenance, installation, etc.• For manual release using M5 triangular key, available as accessory• Topside (ordering suffix ED) or rearside (ordering suffix EU) mounting possible• A combination of manual release and emergency exit in different mounting directions in only possible for the following variants: ED/TU and TD/EUDiagramNote Diagrampositive break NC contactactiveno activeNormallyopen contactNormallyclosed contactSwitch travel diagramNotes Switch travel diagramContact closedContact openSetting rangeBreak pointPositive opening sequence/ angleVS adjustable range of NO contactVÖ adjustable range of NC contactN after travelOrdering suffixThe applicable ordering suffix is added at the end of the part number of the safety switch.Order example: AZM 161SK12/12RKED024G...GProtected against incorrect polarity and voltage spikes.limited terminating space 0,75 mm²Diagram14 guard open13 +24 VDC63 0 VDC64 unlockedOrdering codeAZM 161 (1)(2)(3)K(4)(5)(6)(7)(1)SK Screw connectionCC Cage clampsST male connector M12, 8 and 4poles(Only for U s: 24 VAC/DC)(2)12/122 Normally open contact (NO) / 4Opener (NC)12/112 Normally open contact (NO) / 3Opener (NC) (Plugin connection)11/122 Normally open contact (NO) / 3Opener (NC) (Plugin connection)(3)without Latching force 5 NR Latching force 30 N(4)without Power to unlockA Power to lock(5)without Manual release lateralED Manual release coversideEU Manual release rearT Emergency exit lateralTD Emergency exit coversideTU Emergency exit rearN Emergency release(6)024U s: 24 VAC/DC110/230U s: 110/230 VAC(7)G with LED (Only for U s: 24 VAC/DC)DocumentsOperating instructions and Declaration of conformity (sv) 423 kB, 15.08.2012 Code: mrl_azm161_svOperating instructions and Declaration of conformity (es) 566 kB, 09.03.2016 Code: mrl_azm161_esOperating instructions and Declaration of conformity (de) 439 kB, 29.01.2016 Code: mrl_azm161_deOperating instructions and Declaration of conformity (pt) 402 kB, 10.07.2014 Code: mrl_azm161_ptOperating instructions and Declaration of conformity (en) 443 kB, 29.01.2016 Code: mrl_azm161_enOperating instructions and Declaration of conformity (pl) 424 kB, 24.03.2014 Code: mrl_azm161_plOperating instructions and Declaration of conformity (fr) 401 kB, 14.04.2014 Code: mrl_azm161_frOperating instructions and Declaration of conformity (cs) 425 kB, 15.08.2012 Code: mrl_azm161_csOperating instructions and Declaration of conformity (jp) 481 kB, 11.03.2014 Code: mrl_azm161_jpOperating instructions and Declaration of conformity (it) 392 kB, 11.03.2014 Code: mrl_azm161_itOperating instructions and Declaration of conformity (nl) 425 kB, 15.08.2012 Code: mrl_azm161_nlBGtest certificate (de) 140 kB, 20.05.2015Code: z_m16p01BGtest certificate (en) 134 kB, 20.05.2015Code: z_m16p02CCC certification (en) 596 kB, 23.06.2014Code: q_371p02CCC certification (cn) 607 kB, 23.06.2014Code: q_371p03EAC certification (ru) 809 kB, 05.10.2015Code: q_6040p17_runotice (de, en) 88 kB, 27.09.2007Code: s_161p01ImagesDimensional drawing (basic component)Operating principleSystem componentsActuator101145117 AZM 161B1101144416 AZM 161B1E101171859 AZM 161B1ES101175431 AZM 161B1F101171125 AZM 161B1S101173089 AZM 161B12053 WITH BALL LATCH101164100 AZM 161B11747 WITH MAGNETIC LATCH101178199 AZM 161B12024101176642 AZM 161B12177 WITH CENTERING GUIDE101174113 AZM 161B62177 WITH CENTERING GUIDE • For very smal actuating radii101170375 AZM 161B6S101144420 AZM 161B6• For very smal actuating radiiDoorhandle systemAZM 161STS30• Latching handle• Suitable for all types of guardAccessories101100887 TRIANGULAR KEY TKM5• For manual release using M5 triangular key, available asaccessory• For maintenance, installation, etc.101149213 Mounting set MS AZM 161 R/P101150376 Mounting set MS AZM 161 PK.A. Schmersal GmbH & Co. KG, Möddinghofe 30, D42279 WuppertalThe data and values have been checked throroughly. Technical modifications and errors excepted.Generiert am 13.06.2016 02:53:36h Kasbase 3.2.2.F.64I。
多发性硬下疳皮损上伴发尖锐湿疣1例
学龄期及学龄前期的儿童。其病因复杂， 口服氯雷他定、维生素ｃ、维生素Ｄ、钙剂 上，并通过旁路激活补体，引起损害３。
发病机制尚不明确，也无特殊疗法。我科 及对症治疗。治疗组在对照组基础上加
复方甘草酸苷注射液的主要成分是
于２０００年１月一２００６年６月对４０例过敏 性紫癜患者应用复方甘草酸苷（美能）注 射液治疗，疗效显著。现总结报道如下。 １资料与方法 １．１一般资料ｌＩＳＰ患者８０例，其中男 ４６例，女３４例，年龄５～４９岁，其中＜２０
例（７．５％），关节型２５例（３１．２５％），混合 发作，症状及体征无改善。
样作用的同时却没有激素的副作用；同时
型１３例（１６．２５％）。发病前１～２周有明 １．４统计学处理采用ｙ２检验，以Ｐ＜ 复方甘草酸苷具有调节Ｔ细胞活化，诱导
显上呼吸道感染者２５例（３１．２５％），与食 Ｏ．０５有显著性差异。
１：６４０，ＨＩＶ—Ａｂ（一）；扁平硬结刮取渗液 涂片镀银染色查梅毒螺旋体（ｒＩＰ）阴性；乳 头状增生物醋酸白试验阳性，ＨＰＶ６，１１一 ＰＣＲ（＋），ＨＰＶｌ６，１８一ＰＣＲ（一）。诊断：① 一期梅毒（硬下疳）；②尖锐湿疣（ＣＡ）。治 疗：①苄星青霉素２４０万ｕ分两侧肌注， 每周１次，共３周；②尖锐湿疣采用ｃ０２ 激光治疗。３周后复诊，尖锐湿疣激光治 疗后伤口愈合良好，未见复发；扁平硬结 变平变软，其中部分皮损消退，现正在随 访中。
要累及毛细血管的变态反应性疾病，累及 白尿）６例（７．５％），Ａｔ＇ＩＴ表现为轻度延长 来，对ｌＩＳＰ的发病机制的研究中普遍认为
皮肤、关节、消化系统和肾脏。冬春季较 ７例（８．７５％），ＦＤＰ均在正常范围内。
其发病与ＩｇＡ介导的体液免疫亢进有关，
易发病，男性大约是女性的２倍，好发于 １．２治疗方法对照组进行常规治疗， 过多的或其他免疫复合物沉积在血管壁
Nitronic 60材料说明书Nitronic 60密度Nitronic 60化学成分表
Nitronic60也称为N60或Alloy218，是一种高耐磨的奥氏体不锈钢，218指其UNS编码为S21800。
Nitronic60是一种杰出的耐蚀合金，在低温下也具有杰出的韧性，特别突出的耐腐蚀功能，能很好的抗咬死，高的强度和很好的耐高温氧化功能结合的合金。
此钢还具有优异的抗高温氧化功能和低温冲击韧性。
它的一个特性就是耐磨。
此钢在600℃还具有与inconel718相似的优秀的耐磨损功能，与其他的奥氏体不锈钢和双相不锈钢相比，具有优秀的耐汽蚀功能，能够替代含Co的耐磨合金。
密度为8.0g/cm3。
化学成分性能特点①在梯度上升温度中保持优异的耐磨性能，4%硅含量和8%的锰含量可以有效抑制磨损和表面侵蚀。
②在982℃以下可以保持良好的强度以及和309不锈钢类似的耐氧化性能。
③一般耐腐蚀性能在304不锈钢和316不锈钢之间，抗氯化物点蚀的能力优于316。
④室温屈服强度几乎是304型和316型的两倍。
应用领域与含钴和高镍合金相比，Nitronic60不锈钢能以极低的成本实现抗腐蚀和耐磨损。
同时还具有出色的抗高温氧化性和抗低温冲击性。
适用于不同种类要求高强度和耐磨的紧固件、螺栓、滚动轴承和泵零件等。
我们经过冷加工拉伸晶粒结构来提高强度而不是热处理来加强。
咱们正在考虑90至180 ksi屈服强度，这些是用于新型轴套的，它们正在取代战役机上的铍铜合Nitronic60“十分耐磨。
Nitronic60作为齿轮，传动装置甚至是轮毂。
“当你有一个开放式齿轮时，因为外太空的极点温度，没有油脂会起作用。
它有必要是枯燥产品，这便是耐磨不锈钢的用武之地。
Nitronic牌号的一个特点是奥氏体稳定。
通常，Nitronic等级的锰含量较高。
尽管一般的不锈钢牌号主要是铁，但铬和镍的含量会发生非磁性的奥氏体结构。
当大多数不锈钢在退火后或甚至在意外磕碰时进行加工时，该结构构成铁素体颗粒，其呼应磁铁。
“假如你在扫雷中运用这种资料，奥氏体稳定是好的。
常用黑色金属材料中外牌号对照表
Ml15cr
15x
17cr3
G51150
5115
Ml20cr
20cr4e
20x
G51200
5120
Ml40cr
41cr4e
40x
37cr3
G51400
5140
3/2
Ml15mnb
Ce20bg2
1518
Swrchb620
9/0
Ml20mntib
Ml30crmo
34crmo4e
30xma
G41300
专业最好文档专业为你服务急你所急供你所需文档下载最佳的地方专业最好文档专业为你服务急你所急供你所需文档下载最佳的地方一常用黑色金属材料中外牌号对照表碳素结构钢中国前苏联德国美国日本英国法国gbtoctdinastmjisbsnfq195a1ct1cna283gra040a10a23q195bca1bct1ncq195fa1fct14nq215aa2ct2cnrst342a283grbss34040a12a342q215aba2bct2ncq215afa2fct2knust342q215bc2bct2ncrst342a283grbss34040a12a342q215bbc2vbct2ncq215bfc2fbct2knust34q235aa3ct3cnrst372a289grcss41050a17a372q235aba3bct3ncq235afa3fct3knust372q235bc3bct3cnrst372a3bss41o5oa17a372q235bbc3fbct3ncq235bfc3fbct3knust372q235cq235dq255aa4ct4cnrst422a238grd060a22a422q255bc4bct4cnrst422060a22a422q275c5bct5cnst502ss50060a32a502优质碳素结构钢中国国际标准前苏联德国美国日本英国法国gbisotocjdinunsaisijisbsnf08f08kn10f10kn15f15kn0808g100801008s09ck050a0410c10e10ck10g101001010s10c050a10xc1015c15e15ck15g101501015s15c050a15xc1220c20e20ck20g102001020s20c050a20xc1825c25e25ck25g102501025s25c050a25xc2530c30e30ck30g103001030s30c060a30xc3235c35e35ck35g103501035s35c060a35专业最好文档专业为你服务急你所急供你所需文档下载最佳的地方专业最好文档专业为你服务急你所急供你所需文档下载最佳的地方40c40e40ck40g104001040s40c060a40xc38k145c45e45ck45g104501045s45c060a47xc42h150c50e50ck50g1
FKPF12N60中文资料
FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80Electrical Characteristics T C =25°C unless otherwise notedNotes:1.Gate Open2.Measurement using the gate trigger characteristics measurement circuit3.The critical-rate of rise of the off-state commutating voltage is shown in the table below4.The contact thermal resistance R TH(c-f) in case of greasing is 0.5 °C/WQuadrant Definitions for a TriacSymbol ParameterTest ConditionMin.Typ.Max.Units I DRM Repetieive Peak Off-State Current V DRM applied--20µA V TMOn-State VoltageT C =25°C, I TM =17AInstantaneous measurement-- 1.5V V GTGate Trigger Voltage (Note 2)I V D =6V, R L =6Ω, R G =330ΩT2(+), Gate (+)-- 1.5V II T2(+), Gate (-)-- 1.5V IIIT2(-), Gate (-)-- 1.5V I GT Gate Trigger Current (Note 2)I V D =6V, R L =6Ω, R G =330ΩT2(+), Gate (+)--30mA II T2(+), Gate (-)--30mA IIIT2(-), Gate (-)--30mA V GD Gate Non-Trigger Voltage T J =125°C, V D =1/2V DRM 0.2--V I H Holding Current V D = 12V, I TM = 1A 50mA I L Latching Current I, III V D = 12V, I G = 1.2I GT 50mA II70mA dv/dt Critical Rate of Rise of Off-State VoltagV DRM = Rated, T j = 125°C,Exponential Rise300V/µs (dv/dt)CCritical-Rate of Rise of Off-State Commutating Voltage (Note 3)10--V/µsV DRM (V)Test ConditionCommutating voltage and current waveforms(inductive load)FKPF12N601. Junction Temperature T J =125°C2. Rate of decay of on-state commutating current (di/dt)C = - 6.0A/ms3. Peak off-state voltage V D = 400VFKPF12N80Supply VoltageMain CurrentMain VoltageTimeTimeTime V D(dv/dt)C(di/dt)CT2 Positive+-T2 NegativeQuadrant IIQuadrant IQuadrant IIIQuadrant IVI GT -+I GT(+) T2(+) I GT GATET1(+) T2(+) I GT GATET1(+) T2(+) I GT GATET1(+) T2(+) I GT GATET1FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80FKPF12N60 / FKPF12N80DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.1. Life support devices or systems are devices or systemswhich, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.FACT™FACT Quiet series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™I 2C™ImpliedDisconnect™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™MSX™MSXPro™OCX™OCXPro™OPTOLOGIC ®OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™RapidConfigure™RapidConnect™SILENT SWITCHER ®SMART START™SPM™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET ®VCX™ACEx™ActiveArray™Bottomless™CoolFET™CROSSVOLT ™DOME™EcoSPARK™E 2CMOS™EnSigna™Across the board. Around the world.™The Power Franchise™Programmable Active Droop™。
NIKOS系列场效应管参数技术资料（高压板用）（论文资料）
Surface-Mount And Through-Hole Power MOSFETR DS(ON) Max (m Ω)Part NumberBV DSS (V)VGS@ 2.5V VGS@ 4.5V VGS@ 10VCiss(Typ.)(pF)Qg(Typ.) (nc) R θJC ℃/W VGS(th)Max (V)I D(A)P D (W)N-ChannelP45N02LSG 30( @ 7V)28 600 25 2.6 2.5 4560P45N03LTG 30( @ 7V)28 600 25 3 2.5 4565P75N02LSG 8( @ 7V) 7 5000 140 2.3 3 7565P75N02LTG 8( @ 7V) 7 5000 140 2.3 3 7560P0903BSG 16 9.5 1200 25 2.5 3 5050P0903BTG 16 9.5 1200 25 3 3 5065P3055LSG 120( @ 5V)90 450 15 2.6 2.5 1243P3055LTG 25 120( @ 5V)90 450 15 2.6 2.5 1243P50N03LSG 27 18 12 1200 25 2.5 3 5050P5506BSG 60 75 55 650 12.5 2.6 2.5 1237P0808ATG 8 4645 195 0.65 4 80192P1308ATG 75 13 3820 160 0.65 4 80192P1510ATG 15 3850 120 0.97 4 80128P2610ATG 100 26 2100 75 0.97 4 50128P2615ATG 150 26 3200 80 0.97 4 50128P-ChannelP9006ESG -60 135 90 760 15 2.6 -3 -1848Surface-Mount And Through-Hole Power MOSFETR DS(ON) Max (m Ω)Part NumberBV DSS (V)VGS@ 2.5VVGS@ 4.5V VGS@ 10VCiss(Typ.)(pF) Qg(Typ.) (nc) R θJC ℃/W VGS(th)Max (V)I D(A)P D (W)N-ChannelP5002CDG 85 50( @ 5V) 195 7.5 4.8 1 2026P1402CDG 20 26 14( @ 5V) 500 17 2.6 1.25 4548P45N02LDG 30( @ 7V)28 600 25 3 2.5 4555P60N03LDG 17.8( @ 7V)13.8 600 30 3 2.5 6060P60N03LRG 17.8( @ 7V)13.8 600 30 3 2.5 6060P70N02LDG 15 8.5 1200 25 2.5 3 6550P70N02LR 15 8.5 1200 25 2.5 3 6060P75N02LDG 10 7 2700 19 2.3 3 7560P75N02LR 10 7 5000 140 2.3 3 7560P75N02LI 10 7 5000 140 2.3 3 7560P0403BDG 6 4 4018 42 1.3 3 7596P0603BDG 9.5( @ 5V) 6.5 2679 28 2.3 3 7560P0903BDG 16 9.5 1200 25 2.5 3 5050P0903BI 16 9.5 1200 25 2.5 3 5050P1703BDG 25( @ 7V)17 600 25 3 2.5 4655P2003BDG 31 20 530 8.4 2.5 2.5 3550P2703BDG 41 27 710 14.4 2.5 3 1050P3055LDG 100( @ 5V)50 450 15 3 2.5 1248P3057LDG 25 120( @ 5V)90 450 15 3 2.5 1248P50N03LDG 27 18 12 1200 25 2.5 3 5050P2503BDG 30 37 25 790 16 3 2.5 1232P2504BDG 45 25 760 16 3 3 1241P2804BDG 40 42 28 790 16 3 2.5 1032P5506BDG 60 75 55 650 12.5 3 2.5 1032P-ChannelPA102FDG -20 180 115 430 7.6 5 -1.2 -1025P06P03LDG 75 45 530 10 3 -3 -1248P3003EDG -30 52 30 970 28 2.5 -3 -1850P2504EDG 40( @ 7V)25.8 1570 29 3 -3 -1842P4404EDG 68 44 660 14 4.1 -3 -1030P5504EDG -4094 55 690 14 3 -2.5 -8 28P9006EDG -60 135 90 760 15 3 -3 -7 28Surface-MountComplementary N-P ChannelR DS(ON) Max (m Ω)Part NumberBV DSS (V) ***********@4.5V VGS@10V VGS(th)Max (V)I D (A) P D (W) ConfigurationP2103ND5G 30-3032 60 21352.5 -2.5 8.5 -7 3 N-Ch P-Ch P2503ND5G 30-3037 80 25452.5 -2.5 8 -6 3 N-Ch P-Ch P2804ND5G 40-4049( @ 5V)85( @ 5V)28483.0 -3.0 7 -5.5 3 N-Ch P-Ch P3004ND5G 40-4050( @ 5V)99( @ 5V)30553.0 -3.0 12 -8.8 3 N-Ch P-Ch P4804QD5G 40-4049( @ 5V)85( @ 5V)28483.0 -3.0 7 -5.5 3 N-Ch P-Ch P5806ND5G 60-6085 135 58902.5 -2.55 -43N-Ch P-ChSurface-MountR DS(ON) Max (m Ω)Part NumberBV DSS (V)VGS@ 2.5V VGS@ 4.5V VGS@ 10VCiss(Typ.e)(pF) Qg(Typ.) (nc) R θJA ℃/W VGS(th)Max (V)I D(A)P D (W)N-ChannelP3055LLG 120( @ 5V)90 450 15 42 2.5 6 3P1503BLG2532( @ 5V)21 600 30 83 3 8 1.5Surface-MountR DS(ON) Max (m Ω)PartNumberBV DSS (V) VGS@ 2.5V VGS@ 4.5V VGS@ 10VCiss(Typ.)(pF)Qg(Typ.) (nc) R θJA ℃/W VGS(th)Max (V)I D(A)P D (W)N-ChannelP3057LCG 25 11585 450 15 160 2.5 6 3P-ChannelP06P03LCG -3075 45 530 10 160 -3 -4 0.78Surface-MountR DS(ON) Max (m Ω)Part NumberBV DSS (V)VGS@ 2.5V VGS@ 4.5V VGS@ 10VCiss(Typ.)(pF)Qg(Typ.) (nc) R θJA ℃/W VGS(th)Max (V)I D(A)P D (W)N-ChannelP3202CMG 50 32 740 8 100 1.2 5 1.25P5002CMG 100 50.8 450 12 230 1.2 3 0.6 P7502CMG 20105 75 450 15 230 1.2 3 0.6 P6002CYG 20 85 60 418 5.4 425 1.2 1.80.35P01N02LMAG 500( @ 7V)400 120 11 230 2.5 1.20.6P01N02LMBG 25 250( @ 7V)220 120 11 230 2.5 1.20.6P8503BMG 115 85 450 15 230 2.5 3 0.6P3203CMG 52 32 28 740 8 100 1.2 6 1.25P8003CYG 125 80 65 380 4.5 425 1.2 1.80.35P7503BYG 30 115 75 390 5 425 2.2 1.70.35P-ChannelPA002FMG 140 100 540 6.2 166 -1.2 -3 1.25PA102FMG 215 118 85 430 7.6 166 -1.2 -3 1.25PA502FMG 250 150 410 5.8 166 -1.2 -3 1.25P6402FMG 79 64 950 9.4 100 -1.2 -4 1.25PA102FYG -20215 115 476 5.63 425 -1.2 -1.40.35P5103EMG 85 51 700 12.5 90 -3.0 -4.5 1.25P6403FMG 80 64 950 9.4 100 -1.2 -4 1.25PA503EMG 250 150 410 5.8 166 -2.5 -2 1.25PA503EYG -30 250 150 410 5.8 425 -2.5 -1.40.35Surface-MountComplementary N-P ChannelR DS(ON) Max (m Ω)Part NumberBV DSS (V) ***********@4.5V VGS@10VVGS(th)Max (V)I D (A)P D (W)ConfigurationP6503NJG 30 -30120250 65 150 2.5 -2.5 4 -3 2 N-ChP-ChSurface-MountR DS(ON) Max (m Ω)Part NumberBV DSS (V)VGS@ 2.5V VGS@ 4.5V VGS@ 10VCiss(Typ.)(pF)Qg(Typ.) (nc) R θJA /W VGS(th)Max (V)I D(A)P D (W)N-Channe lP2402CAG 20 35 24 1125 10.5 78 1.2 6.5 1.6 P2703BAG 30 40 27 680 10 78 3 7 1.6 P-ChannelP4402FAG -20 70 44 1100 12.5 62.5 -1.2 -5 2PA102FAG 215 118 85 430 7.6 166 -1.2 -3 1.25P5103EAG -30 85 51 700 12.5 62.5 -3 -5 2Surface-MountComplementary N-P ChannelR DS(ON) Max (m Ω)Part NumberBV DSS (V) ***********@4.5V VGS@10VVGS(th)Max (V)I D (A)P D (W)ConfigurationP6002OAG 20 -2085180 60115 1.2 -1.2 3.6 -3.1 1.15 N-ChP-ChP5803NAG30-30 88 185 58 115 2.5 -2.5 3.5 -2.3 1.15 N-ChP-ChP6803NAG 30-30 98 245 68 145 2.5 -2.5 3.5 -2.3 1.15 N-ChP-ChSurface-Mount And Through-Hole Power MOSFET Complementary N-P ChannelR DS(ON) Max (m Ω)Part NumberBV DSS (V) ***********@4.5V VGS@10VVGS(th)Max (V)I D (A)P D (W)ConfigurationP2103NPG30 -30 32 60 21352.5 -2.5 7 -6 2.5 N-ChP-ChP2103NVG30 -30 32 60 21352.5 -2.5 7 -6 2 N-ChP-ChP2503NPG30 -30 37 80 25452.5 -2.5 7 -5 2.5 N-ChP-ChP2503NVG30 -30 37 80 25452.5 -2.5 7 -5 2 N-ChP-ChP2803NVG30 -30 40 56 27.5342.5 -2.5 7 -6 2 N-ChP-ChP3503QVG30 -30 37 60 25352.5 -2.5 7 -6 2 N-ChP-ChP4532VG30 -30 95 80 60452.5 -2.5 4 -5 2 N-ChP-ChP5003QVG30 -30 40 80 27.5452.5 -2.5 7 -5 2 N-ChP-ChP5503NVG30 -30 95 80 55452.5 -2.5 5 -5 2 N-ChP-ChP2804NPG40 -40 42 85 28552.5 -2.5 7 -6 2.5 N-ChP-ChP2804NVG40 -40 42 105 28652.5 -2.5 7 -5 2 N-ChP-ChP5504QVG40 -40 60 90 40553.0 -3.0 5.5 -4.5 2 N-ChP-ChP5806NVG60 -6085 135 5890 2.5 -2.54.5 -3.52 N-ChP-ChSurface-MountR DS(ON) Max (m Ω)Part NumberBV DSS (V) ***********@4.5V VGS@10V VGS(th)Max (V)I D (A) P D (W) ConfigurationN-ChannelP2002IVG 20 35 21 1.2 7 2 DualP0603BVG 9 6 3 17 2.5 SingleP0803BVG 12 8 3 15 2.5 Single P1103BVG 16.5 11 2.5 11 2.5 Single P1303BVG 20 12.5 2.5 10 2.5 Single P1403BVG 22 14 3 12 2.5 Single P1503BVG 24 15 3 11 2.5 Single P1803BVG 30 18 2.5 8 2.5 Single P2003BVG 32 20 2.5 8 2.5 Single P07D03LVG 30 23 3 7 2 Dual P2103HVG 35 21 3 7 2 Dual P2503HVG 37 25 2.5 7 2 Dual P2803HVG 40 27.5 2.5 7 2 Dual P6803HVG 30 98( @ 5V)68 3 4.5 2 Dual P2804BVG 42 28 2.5 7.5 2.5 Single P2804HVG 40 42 28 3 7 2 Dual PA606HVG 55 210 160 3 3 2 Dual P5506BVG 75 55 2.5 5.5 2.5 Single P5506HVG 60 75 55 2.5 4.5 2 Dual P-ChannelP06B03LVG 80 50 -3 -6 2.5 Dual P06P03LVG 75 45 -3 -6 2.5 Single P0703EVG 13 7.5 -3 -17 2.5 Single P1003EVG 16 10.5 -3 -13 2.5 Single P1203EVG 19 12 -3 -12 2.5 Single P1403EVG 22 14 -3 -12 2.5 Single P2003EVG 35 20 -3 -9 2.5 Single P3203EVG 55 32 -2.5 -8 2.5 Single P3503EVG -3060 35 -2.5 -8 2.5 Single P5504EVG -40 94 55 -2.5 -5.5 2.5 SingleSurface-MountComplementary N-P ChannelR DS(ON) Max (m Ω)Part NumberBV DSS (V) ***********@4.5V VGS@10VVGS(th)Max (V)I D (A)P D (W)ConfigurationN-Channel P2502IZG 20 40 25 1.2 6 1.5 Dual。
场效应管参数大全
场效应管参数⼤全场效应管参数⼤全百度空间⽆限的未知真⼼真诚理解真情永恒K2645: 600V,1.2Ω,9A,50W K2141: 600V,1.1Ω,6A,35WK3326: 500V,0.85Ω,10A,40WK1388: 30V,0.022Ω,35A,60WK1101: 450V,0.5Ω,10A,50WK1507: 9A 600V2SK1537 N-FET 900V 5A 100WK2045 600V, 6A , 35W 。
代K1404, K2101, 2SK2118。
K1118,K2645,K2564,K2545,K1507,K2761,K1117,K2333代k214107N03L 30V 80A 150W N10N20 10A 200V N 沟道MOS管10N60 10A 600V11N80 11A 800V 156W11P06 60V 9.4A P沟道直插13N60 13A 600V N 沟道15N03L 30V 42A 83W N2N7000 60V 0.2A 0.35W N2N7000 60V 0.2A 0.35W N40N03H 30V 40A N4232 内含P沟道,N沟道MOS管各⼀,4532M 内含P沟道,N沟道MOS管各⼀,50N03L(SD 30V 47A 50W N 沟道⼩贴⽚MOS55N03 25V 55A 103W5N90 5A 900V5P25 250V 5A6030LX 30V 52A 42W N603AL 30V 25A 60W N 沟道⼩贴⽚MOS6A60 600V 6A N6N70 700V 6A N6P25 250V 6A70L027N70 7A 700V85L028N25 250V ,8A ,同IRF63495N03 25V 75A 125W9916H 18V 35A 58W ⼩贴⽚，全新9N60 9A 600V9N70 9A 700VAF4502CS 内含P沟道，N沟道MOS管各⼀A04403 30V 6.1A 单P沟道 8脚贴⽚A04404 30V 8.5A 单N沟道 8脚贴⽚A04405 30V 6A 3W 单P沟道8脚贴⽚A04406 30V,11.5A,单N沟道,8脚贴A04407 30V 12A 3W 单P沟道,8脚贴⽚A04407 30V 12A 3W 单P沟道,8脚贴⽚A04408 30V 12A 单N沟道,8脚贴⽚A04409 30V 15A P沟道场效应,8脚A04410 30V 18A 单N沟道8脚贴⽚A04411 30V 8A 3W P沟道场效应,8脚A04413 30V 15A 3W 单P沟道,8脚贴⽚A04413 30V 15A 3W 单P沟道,8脚贴⽚A04414 30V,8.5A,3WM 单N沟道，8脚A04418 30V 11.5A N沟道8脚贴⽚A04422 30V 11A N 沟道 8脚贴⽚A04423 30V 15A 3.1W 单P沟道,8脚贴A04600 内含P沟道，N沟道MOS管各⼀A0D405 30V，18A，P⾼压板MOS管贴A0D408 30V，18A，P⾼压板MOS管贴A0D409 60V 26/18A P ⾼压板MOS 管贴A0D409 60V 26/18A P ⾼压板MOS 管贴A0D420 30V,10A,N⾼压板MOS管贴A0D442 60V，38/27A，N ⾼压板MOS管贴A0D442 60V38/27A,N⾼压板MOS管贴A0D444 60V,12A,N ⾼压板MOS管贴A0P607 内含P、N沟道各1，60V 4。
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1/16September 2005STF2NK60Z - STQ2NK60ZR-APSTP2NK60Z - STD2NK60Z-1N-CHANNEL 600V - 7.2Ω - 1.4A TO-220/TO-220FP/TO-92/IPAKZener-Protected SuperMESH™ MOSFETTable 1: General Featuress TYPICAL R DS (on) = 7.2 Ωs EXTREMELY HIGH dv/dt CAPABILITY s ESD IMPROVED CAPABILITY s 100% AVALANCHE TESTEDs NEW HIGH VOLTAGE BENCHMARK sGATE CHARGE MINIMIZEDDESCRIPTIONThe SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS-FETs including revolutionary MDmesh™ products.APPLICATIONSs LOW POWER BATTERY CHARGERS s SWITH MODE LOW POWER SUPPLIES(SMPS)s LOW POWER, BALLAST, CFL (COMPACT FLUORESCENT LAMPS)Table 2: Order CodesFigure 2: Internal Schematic DiagramTYPE V DSS R DS(on)I D Pw STF2NK60ZSTQ2NK60ZR-AP STP2NK60Z STD2NK60Z-1600 V 600 V 600 V 600 V< 8 Ω< 8 Ω< 8 Ω< 8 Ω1.4 A 0.4 A 1.4 A 1.4 A203 W 45 W 45 WTO-92 (Ammopack)IPAKPart Number Marking Package Packaging STQ2NK60ZR-AP Q2NK60ZR TO-92AMMOPAK STP2NK60Z P2NK60Z TO-220TUBE STD2NK60Z-1D2NK60Z IPAK TUBE STF2NK60ZF2NK60ZTO-220FPTUBERev. 5STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-12/16Table 3: Absolute Maximum ratings( ) Pulse width limited by safe operating area(1) I SD ≤ 1.4A, di/dt ≤ 200A/µs, V DD ≤ V (BR)DSS , T j ≤ T JMAX.(*) Limited only by maximum temperature allowedTable 4: Thermal DataTable 5: Avalanche CharacteristicsTable 6: Gate-Source Zener DiodePROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designed to enhance not only the device ’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device ’s integrity. These integrated Zener diodes thus avoid the usage of external components.SymbolParameterValue UnitTO-220 / IPAKTO-92TO-220FPV DS Drain-source Voltage (V GS = 0)600V V DGR Drain-gate Voltage (R GS = 20 k Ω)600V V GS Gate- source Voltage± 30V I D Drain Current (continuous) at T C = 25°C 1.40.4 1.4 (*)A I D Drain Current (continuous) at T C = 100°C 0.770.250.77 (*)A I DM ( )Drain Current (pulsed) 5.6 1.6 5.6 (*)A P TOT Total Dissipation at T C = 25°C 45320W Derating Factor0.360.0250.16W/°C V ESD(G-S)Gate source ESD (HBM-C= 100pF, R=1.5k Ω)1500V V ISO Insulation Withstand Voltage (DC)2500V dv/dt (1)Peak Diode Recovery voltage slope 4.5V/ns T j T stgOperating Junction Temperature Storage Temperature-55 to 150°C TO-220/IPAKTO-220FP TO-92Unit Rthj-case Thermal Resistance Junction-case Max 2.77 6.25--°C/W Rthj-amb Thermal Resistance Junction-ambient Max 100100120°C/W Rthj-leadThermal Resistance Junction-lead Max ----40°C/W T lMaximum Lead Temperature For Soldering Purpose300260°CSymbol ParameterMax ValueUnit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max)1.4A E ASSingle Pulse Avalanche Energy(starting T j = 25 °C, I D = I AR , V DD = 50 V)90mJSymbol Parameter Test Conditions Min.Typ.Max.Unit BV GSOGate sourceBreakdown VoltageI gs = ± 1 mA (Open Drain)30V3/16STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1ELECTRICAL CHARACTERISTICS (T CASE =25°C UNLESS OTHERWISE SPECIFIED)Table 7: On/OffTable 8: DynamicTable 9: Source Drain Diode(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(2) Pulse width limited by safe operating area.(3) C oss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSSSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 1mA, V GS = 0600V I DSS Zero Gate VoltageDrain Current (V GS = 0)V DS = Max RatingV DS = Max Rating, T C = 125 °C 150µA µA I GSS Gate-body Leakage Current (V DS = 0)V GS = ± 20V±10µA V GS(th)Gate Threshold Voltage V DS = V GS , I D = 50 µA 33.754.5V R DS(on)Static Drain-source On ResistanceV GS = 10V, I D = 0.7 A7.28ΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (1)Forward Transconductance V DS = 15 V , I D = 0.7 A 1S C iss C oss C rss Input Capacitance Output CapacitanceReverse Transfer CapacitanceV DS = 25V, f = 1 MHz, V GS = 0170275pF pF pF C oss eq. (3)Equivalent Output Capacitance V GS = 0V, V DS = 0V to 480V 30pF t d(on)t r t d(off)t r Turn-on Delay Time Rise TimeTurn-off Delay Time Fall TimeV DD = 300 V, I D = 0.65 A,R G = 4.7 Ω, V GS = 10 V(Resistive Load see, Figure 22)8302255ns ns ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD = 480V, I D = 1.5 A,V GS = 10V(see, Figure 24)7.71.7410nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (2)Source-drain CurrentSource-drain Current (pulsed) 1.56A A V SD (1)Forward On Voltage I SD = 1.5 A, V GS = 0 1.6V t rr Q rr I RRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 1.3 A, di/dt = 100 A/µs V DD = 25V, T j = 25°C(see test circuit, Figure 23)2505504.4ns µC A t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD = 1.3 A, di/dt = 100 A/µs V DD = 25V, T j = 150°C (see test circuit, Figure 23)3006904.6ns µC ASTQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-14/16Figure 3: .Safe Operating Area For TO-220Figure 6: Thermal Impedance For TO-2205/16STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1Figure 9: Safe Operating Area For TO-220FPFigure 12: Thermal Impedance For TO-220FPSTQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-16/16Figure 15: Static Drain-source On ResistanceFigure 18: Source-Drain Forward Characteris-ticsSTQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 Figure 21: Normalized BV DSSvs Temperature7/16STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-18/16Figure 22: Switching Times Test Circuit For Resistive LoadFigure 23: Test Circuit For Inductive Load Switching and Diode Recovery TimesFigure 24: Gate Charge Test CircuitSTQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: 9/16STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-110/16DIM.mm.inchMIN.TYP MAX.MIN.TYP.MAX.A1 4.45 4.950.1700.194 T 3.30 3.940.1300.155 T1 1.60.06 T2 2.30.09 d0.410.560.0160.022 P012.512.712.90.490.50.51 P2 5.65 6.357.050.220.250.27 F1, F2 2.44 2.54 2.940.090.10.11 delta H-22-0.080.08 W17.518190.690.710.74 W0 5.76 6.30.220.230.24 W18.599.250.330.350.36 W20.50.02 H18.520.50.720.80 H015.51616.50.610.630.65 H1250.98 D0 3.84 4.20.150.1570.16 t0.90.035 L110.43 l130.11delta P-11-0.040.04TO-92 AMMOPACKTable 10: Revision HistoryDate Revision Description of Changes 07-Jul-20043The document change from “TARGET” to “COMPLETE”New stylesheet11/Nov/20044Added TO-220FP05-Sep-20055Inserted Ecopack indicationInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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