2SD1415A中文资料
2SD315A驱动器中文资料
IGBT和功率MOSFES使用的双重SCALE驱动器2SK315A描述CONCETP公司的SCALE驱动器是为IGBT和功率MOSTET的可靠驱动和安全工作是基于芯片装置而发展研制的。
“SCALE”的名称是根据SCALE系列驱动器的最显著特性的单词首字母的缩写：SCALE= S caleable, C ompact,A ll purpose, L ow cost and E asyto use.SCALE = 可缩放，简洁的，通用的，低成本和易于应用。
SCALE驱动器是“1998 瑞士技术中心”竞赛组织的成功方案。
和CSALE驱动器最杰出的ABB瑞士AG开发荣誉奖“1998最优电力电子项目”。
产品特点✓1200V和1700V的IGBT配套✓短路和过电流保护✓非常可靠，高耐用寿命✓±15A的高门极电流✓4000V AC电气隔离✓电气隔离资质认证✓电源和自身监控的控制✓开关频率从DC到100KHz✓占空因数：0---100%✓高dv/dt 抗扰性，保证＞100,000V/us✓完全用DC/DC变换应用✓变频器✓电机驱动技术✓牵引✓铁路供电✓变流✓能源工程✓开关电源✓放射学和激光科技✓DC/DC变换✓研究✓RF（射频）发生器和转换方块图图1 2SD315A方块图引脚描述传说：指定为“空闲”的引脚是在物理上不存在的。
PCB规划／机械尺寸在页4下面的制图显示栅格是：1.27mm(50mil) 焊盘推荐直径：Φ1.6mm过孔推荐直径：Φ1.0mm机械尺寸图2 2SD315A主视（顶）/结构宽度布局观察（底）图3 2SD315A侧视（顶）/机械固定（底）X高度：典型值22mm机械固定2SD315A驱动器有每个直径是3.2mm的二个孔。
在震动和摇晃（铁路，牵引系统，电动车，等等）下要求非常高的绝缘的应用时驱动器所允许的额外固定。
看图3（底）额定最大绝对值除另外规定，全部数据查阅是+25℃和VDD=VDC=15V电气特性电气特性（继续）除另外规定，全部数据查阅是+25℃和VDD=VDC=15V eff: efficiency 效率pk： peak 顶点工作环境关键数据脚标1)驱动器在每个通道上加一只齐纳二极管用于过电压保护,当输入电压超过16V时,这个保护通制约热过载。
A1015中文资料参数
mA
IB
Base Current基极电流
-50
mA
PC
Collector Power Dissipation耗散功率
400
mW
TJ
Junction Temperature结温
125
℃
TSTG
Storage Temperature贮藏温度
-65 ~ 150
℃
电参数：
Symbol符号
Parameter参数
Value数值
Units单位
Vቤተ መጻሕፍቲ ባይዱBO
Collector-Base Voltage集电极-基极电压
-60
V
VCEO
Collector-Emitter Voltage集电极-射极电压
-50
V
VEBO
Emitter-Base Voltage射极-基极电压
-5
V
IC
Collector Current集电极电流
Test Condition测试条件
Min最小
Typ平均
Max最大
Units单位
BVCBO
Collector-Base Breakdown Voltage集电极-基极击穿电压
IC= -100μA, IE=0
-50
-
-
V
BVCEO
Collector-Emitter Breakdown Voltage集电极-发射极击穿电压
VCB=10V, IE=0, f=1MHz
-
4.0
7.0
pF
NF
Noise Figure噪声系数
VCE=6V, IC=0.1mA RS=10kΩ, f=1Hz
2SD555中文资料
2SD555
MAX
UNIT V V
1.5 5.0 2.0 0.1 0.1 200
V V V mA mA
pF MHz
2
元器件交易网
Inchange Semiconductor Produicon NPN Power Transistors
元器件交易网
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors
2SD555
DESCRIPTION ·With TO-3 package ·High power dissipation ·Complement to type 2SB600 APPLICATIONS ·For high speed ,high current ,high power applications
THERMAL CHARACTERISTICS
SYMBOL Rth j-C PARAMETER Thermal resistance junction to case VALUE 1.46 UNIT ℃/W
元器件交易网
Inchange Semiconductor Product Specification
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 250 200 5 10 200 150 -55~200 UNIT V V V A W ℃ ℃
2SD315AI 中文版
最小值
最大值
单位
VDC 电源输入
0
16
Vdc
VDD 电源输入
0
16
Vdc
逻辑电平输入
到 GND 之间
0
VDD
Vdc
门极驱动峰值电流
Gx 到 Ex
-18
+18
A
DC/DC 变换器功率
所有桥臂总和
6
W
输入输出隔离电压
连续（注 8）
1200
Vdc
耐压测试
输入脚和输出脚间
4000
Vac 有效值
（50KHz/1min）
空载
30
mA
最大电源电流 IDC （注 2）
470
mA
DC/DC 变换器功率 （注 3）
6
W
效率
内置 DC/DC 变换器
85
%
VDD 电源输入
到 GND
15
Vdc
电源电流 IDD
空载
12
mA
电源电流 IDD
开关频率 25KHz
15
mA
电源监视 起动工作电压 电压滞环
测试条件 （注 4） （注 4）
最小值
驱动器设计的输出功率是 6W，每路输出 3W。一般足以驱动 1200A/1200V 的 IGBT(开关频率 6.25KHZ)。当驱动器输出 6W 时， 输入驱动器的功率将为 7W。驱动器本身损耗为 1W。因为驱动器可 能应用于不同的场合，所以驱动器的温升及输出最大功率没有给出推 荐值。在用于很高环境温度时，建议对整个系统的热设计进行校对。
双路 SCALE 技术 IGBT 和 MOSFET 驱动器 —— 2SD315A
概述
2SD1615中文资料
Document No. D10198EJ3V0DSD0 (3rd edition) (Previous No. TC-5810A)Date Published June 1995 P Printed in Japan ©198522SD1615, 2SD1615ATYPICAL CHARACTERISTICS (T A = 25 ˚C)T A – Ambient Temperature – ˚C4080120160200P T – T o t a l P o w e r D i s s i p a ti o n – WTOTAL POWER DISSIPATION vs.AMBIENT TEMPERATURECOLLECTOR CURRENT vs.BASE TO EMITTER VOLTAGEV CE – Collector to Emitter Voltage – VI C – C o l l e c t o r C u r r e n t – m AI C – Collector Current – ADC CURRENT GAIN vs.COLLECTOR CURRENTh E F – D C C u r r e n t G a i nCOLLECTOR CURRENT vs.COLLECTOR TO EMITTER VOLTAGEV CE(sat) – Collector Saturation Voltage – V I C – C o l l e c t o r C u r r e n t – A0.010.020.050.10.20.512510I C – Collector Current – ACOLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENTV C E (s a t ) – C o ll e c t o r S a t u r a t i o n V o l t a g e – V V B E (s a t ) – B a s e S a t u r a t i o n V o l t a g e – VSAFE OPERATING AREA(TRANSIENT THERMAL RESISTANCE METHOD)5210.50.20.10.050.020.01125102050100V CE – Collector to Emitter Voltage – V I C – C o l l e c t o r C u r r e n t – A3GAIN BANDWIDTH PRODUCT vs.EMITTER CURRENTf T – G a i n B a n d w i d t h P r o d u c t – M H ZI C– Collector Current – AOUTPUT CAPCITANCE vs.COLLECTOR TO BASE VOLTAGEC o b – O u t p u t C a p a c i t a n c e – p FV CB – Collector to Base Voltage – VI C – Collector Current – ASWITCHING TIME vs.COLLECTOR CURRENTt – S w i t c h i n g T i m e– sµREFERENCE[MEMO]No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.NEC devices are classified into the following three quality grades:“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based ona customer designated “quality assurance program“ for a specific application. The recommended applicationsof a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application.Standard:Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronicequipment and industrial robotsSpecial:Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designedfor life support)Specific:Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc.The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance.Anti-radioactive design is not implemented in this product.M4 94.11。
三极管资料大全解读
读书的好处1、行万里路，读万卷书。
2、书山有路勤为径，学海无涯苦作舟。
3、读书破万卷，下笔如有神。
4、我所学到的任何有价值的知识都是由自学中得来的。
——达尔文
5、少壮不努力，老大徒悲伤。
6、黑发不知勤学早，白首方悔读书迟。
——颜真卿
7、宝剑锋从磨砺出，梅花香自苦寒来。
8、读书要三到：心到、眼到、口到
9、玉不琢、不成器，人不学、不知义。
10、一日无书，百事荒废。
——陈寿
11、书是人类进步的阶梯。
12、一日不读口生，一日不写手生。
13、我扑在书上，就像饥饿的人扑在面包上。
——高尔基
14、书到用时方恨少、事非经过不知难。
——陆游
15、读一本好书，就如同和一个高尚的人在交谈——歌德
16、读一切好书，就是和许多高尚的人谈话。
——笛卡儿
17、学习永远不晚。
——高尔基
18、少而好学，如日出之阳；壮而好学，如日中之光；志而好学，如炳烛之光。
——刘向
19、学而不思则惘，思而不学则殆。
——孔子
20、读书给人以快乐、给人以光彩、给人以才干。
——培根。
2SD1235中文资料(Inchange Semiconductor)中文数据手册「EasyDatasheet - 矽搜」
参数
VCBO VCEO VEBO
集电极基极电压
集电极 - 发射极电压
发射极基极电压
IC
集电极电流（DC）
ICM
集电极电流峰值
PC
集电极耗散
Tj
结温
T stg
储存温度
℃)
条件 打开发射器 开基 集电极开路
T C=25℃
产品规格
2SD1235
·
VALUE
UNIT
60
V
30
V
6
V
8
A
15
A
30 W
1.75
I EBO hFE-1 hFE-2
fT
开关时间
发射极截止电流
DC电流增益 DC电流增益
转换频率
t on
开启时间
ts
E-1 分类
Q
R
S
70-140 100-200 140-280
条件
IC=1mA ;R BE=∞ IC=1mA ;I E=0 IE=1mA; I C=0 IC=3A; I B=0.15A VCB=40V; I E=0 VEB=4V; I C=0 IC=1A ; V CE=2V IC=4A ; V CE=2V IC=1A ; V CE=5V
150
℃
-55~150
℃
芯片中文手册,看全文,戳
硅NPN功率晶体管
特性 除非另有说明 TJ = 25℃
符号
参数
V(BR)CEO 集电极 - 发射极击穿电压 V(BR)CBO 集电极基击穿电压 V(BR)EBO 发射基地击穿电压
VCEsat ICBO
集电极 - 发射极饱和电压
集电极截止电流
芯片中文手册,看全文,戳
A1015中文资料参数
IC= -10mA, IB=0
-50
-
-
V
BVEBO
Emitter-Base Breakdown Voltage发射极-基极击穿电压
IE= -10μA, IC=0
-5
-
-
V
ICBO
Collector Cut-off Current集电极截止电流
2SB1020A中文资料
VCB = −100 V, IE = 0 VEB = −5 V, IC = 0 IC = −50 mA, IB = 0 VCE = −3 V, IC = −3 A VCE = −3 V, IC = −7 A IC = −3 A, IB = −6 mA IC = −7 A, IB = −14 mA IC = −3 A, IB = −6 mA
0
0
−2
−4
−6
−8
−10
−12
Collector-emitter voltage VCE (V)
DC current gain hFE
)
10000 5000 3000
hFE – IC
Tc = 100°C 25
−50 1000
500
200 −0.3
Common emitter VCE = −3 V
−1
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
2006-11-21
Collector current IC (A)
IC – VCE
−10 Common emitter Tc = 25°C
−8 −2.5 −2.0 −1.5
−3
−2
−1
0 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 −3.2
Base-emitter voltage VBE (V)
Transient thermal resistance rth (°C/W)
rth – tw
100 Curves should be applied in thermal limited area.
三极管查询大全
150V 50V 350V 650V 60V 180V 160V 160V 160V 450V 100V 60V 40V 60V 反压 Vbe0 30V 50V 50V 50V 50V 50V 100V 100V 100V 100V 100V 100V 100V 100V 100V 反压 Vbe0 100V 100V 1500V 400V 400V 60V
NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 管子类型 NPN NPN NPN NPN NPN NPN(达林顿) NPN
2SC3907 2SC3893 2SC3886 2SC3873 2SC3866 2SC3858 2SC3807 2SC3783 晶体管型号 2SC3720 2SC3680 2SC3679 2SC3595 2SC3527 2SC3505 2SC3460 2SC3457 2SC3358 2SC3355 2SC3320 2SC3310 2SC3300 2SC1855 2SC1507 晶体管型号 2SC1494 2SC1222 2SC1162 2SC1008 2SC900 2SC828 2SC815 2SC380 2SC106 2SB1494 2SB1429 2SB1400
12A 8A 8A 12A 3A 17A 2A 5A 电流 Icm 10A 7A 5A 0.5A 15A 6A 6A 3A 0.15A 0.15A 15A 5A 15A 0.02A 0.2A 电流 Icm 6A 0.1A 1.5A 0.7A 0.03A 0.05A 0.2A 0.03A 1.5A 25A 15A 6A
* * * * * * * * * * * * * 放大系数 * * * * * * * * * * * * * * * 放大系数 * * * * * 1000 *
常用晶体管参数表
常用晶体管参数表数据来自互联网，01mcu整理，仅供参考索引晶体管型号反压Vbeo电流Icm功率Pcm放大系数特征频率管子类型90901150V0.03A0.4W*150MHZ NPN 901250V0.5A0.6W**PNP901350V0.5A0.6W**NPN901450V0.1A0.4W*150MHZ NPN901550V0.1A0.4W*150MHZ PNP901830V0.05A0.4W*1GHZ NPN 2N2N222260V0.8A0.5W45*NPN 2N236940V0.5A0.3W*800MHZ NPN2N290760V0.6A0.4W200*NPN2N3055100V15A115W**NPN2N3440450V1A1W**NPN2N3773160V16A150W**NPN2N5401160V0.6A0.6W*100MHZ PNP2N5551160V0.6A0.6W*100MHZ NPN2N568560V50A300W**NPN2N6277180V50A300W**NPN2N6678650V15A175W**NPN 2SA2SA1009350V2A15W**PNP 2SA1012Y60V5A25W**PNP2SA1013R160V1A0.9W**PNP2SA1015R50V0.15A0.4W**PNP2SA1018150V0.07A0.75W**PNP2SA102050V2A0.9W**PNP2SA1123150V0.05A0.75W**PNP2SA116250V0.15A0.15W**PNP2SA1175H50V0.1A0.3W**PNP2SA1216180V17A200W**PNP2SA1265140V10A30W**PNP2SA1266Y50V0.15A0.4W**PNP2SA1295230V17A200W**PNP2SA129950V0.5A0.3W**PNP2SA130020V2A0.7W**PNP2SA1301200V10A100W**PNP2SA1302200V15A150W**PNP2SA1304150V 1.5A25W**PNP2SA1309A25V0.1A0.3W**PNP2SA1358120V1A10W*120MHZ PNP2SA139035V0.5A0.3W**PNP2SA1444100V 1.5A2W*80MHZ PNP2SA1494200V17A200W*20MHZ PNP2SA1516180V12A130W*25MHZ PNP2SA1785400V1A1W*140MHZ PNP2SA1943230V15A150W**PNP2SA562T30V0.4A0.3W**PNP2SA564A25V0.1A0.25W**PNP2SA608F30V0.1A0.25W**PNP2SA67350V0.5A0.4W**PNP2SA720-Q50V0.5A0.4W**PNP2SA778AK180V0.05A0.2W**PNP2SA90490V0.05A0.2W**PNP2SA933S50V0.1A0.9W**PNP2SA940150V 1.5A 1.5W**PNP2SA950Y150V0.8A0.6W**PNP2SA966Y30V 1.5A0.9W**PNP2SA968Y160V 1.5A25W**PNP2SB2SB1013A30V0.5A0.3W**PNP 2SB1020100V7A40W6000*PNP(达林顿）2SB1079100V20A100W5000*PNP(达林顿）2SB118560V3A25W*75MHZ PNP2SB123880V0.7A1W*100MHZ PNP2SB124040V2A1W*100MHZ PNP2SB124340V3A1W*70MHZ PNP2SB1316100V2A10W15000*PNP(达林顿）2SB1317180V15A150W**PNP2SB133580V4A30W**PNP2SB137560V3A2W**PNP2SB1400120V6A25W1000-20000*PNP(达林顿）2SB1429180V15A150W**PNP2SB1494120V25A120W**PNP(达林顿）2SB44950V 3.5A22W**PNP2SB564A45V0.05A0.25W**PNP2SB642-R60V0.2A0.4W**PNP2SB647120V1A0.9W*140MHZ PNP2SB649180V 1.5A1W**PNP2SB66970V4A40W**PNP(达林顿）2SB67560V7A40W**PNP(达林顿）2SB686100V6A60W**PNP2SB688120V8A80W**PNP2SB73460V1A1W**PNP2SB74470V3A10W**PNP2SB77240V3A10W**PNP2SB774T30V0.01A0.25W**PNP2SB817160V12A100W**PNP2SB83460V3A30W**PNP2SB88260V- 1.7W**PNP2SB940200V2A30W**PNP2SC2SC100880V0.7A0.8W*50MHZ NPN 2SC104730V0.015A0.15W**NPN2SC116235V 1.5A10W**NPN 2SC1213D50V0.5A0.4W**NPN 2SC1214C50V0.5A0.6W**NPN 2SC122260V0.1A0.25W*100MHZ NPN 2SC1317-R30V0.5A0.4W**NPN 2SC136050V0.05A0.5W**NPN 2SC149436V6A40W*175MHZ NPN 2SC1507300V0.2A15W**NPN 2SC1514300V0.1A 1.25W**NPN 2SC1569300V0.15A 1.5W**NPN 2SC1573A250V0.07A0.6W**NPN 2SC1627Y80V0.3A0.6W**NPN 2SC167430V0.02A0.1W**NPN 2SC168530V0.1A0.25W**NPN 2SC1685Q30V0.1A0.25W**NPN 2SC174050V0.3A0.3W**NPN 2SC1815Y60V0.15A0.4W**NPN 2SC182780V4A30W**NPN 2SC184645V1A 1.2W**NPN 2SC185520V0.02A0.25W*550MHZ NPN 2SC187550V0.15A0.4W**NPN 2SC1890A120V0.05A0.3W**NPN 2SC190630V0.05A0.3W**NPN 2SC192340V0.02A0.1W**NPN 2SC19421500V3A100W**NPN 2SC195930V0.4A0.5W**NPN 2SC1983R80V3A30W**NPN 2SC20271500V5A50W**NPN 2SC206870V0.2A0.62W**NPN 2SC2073150V 1.5A25W**NPN 2SC2120Y30V0.8A0.6W**NPN 2SC21252200V5A50W**NPN 2SC2168200V2A30W**NPN 2SC218845V0.05A0.6W**NPN 2SC2190450V5A100W**NPN 2SC221650V0.05A0.3W**NPN 2SC2229200V0.05A0.8W**NPN 2SC223630V 1.5A0.9W**NPN 2SC2238160V 1.5A25W**NPN 2SC2258250V0.1A1W**NPN 2SC227300V0.1A0.75W**NPN 2SC2271N300V0.1A0.75W**NPN 2SC2371300V0.1A10W**NPN 2SC237720V0.015A0.2W**NPN 2SC2377C30V0.15A0.2W**NPN 2SC2383Y160V1A0.9W**NPN 2SC2456300V0.1A10W**NPN2SC2568300V0.2A10W**NPN 2SC2570A25V0.07A0.6W**NPN 2SC259440V5A10W**NPN 2SC2610300V0.1A0.8W**NPN 2SC2611300V0.1A 1.25W**NPN 2SC2621300V0.2A10W**NPN 2SC2636Y30V0.05A0.4W**NPN 2SC2653H250V0.2A15W**NPN 2SC2655Y60V2A0.9W**NPN 2SC2688300V0.2A10W**NPN 2SC271735V0.8A7.5W**NPN 2SC278560V0.1A0.3W**NPN 2SC283930V0.1A0.1W**NPN 2SC287850V0.3A0.4W**NPN 2SC2923300V0.2A15W**NPN 2SC304CD60V0.5A0.8W**NPN 2SC3063300V0.1A 1.2W**NPN 2SC311460V0.15A0.2W**NPN 2SC3153900V6A100W**NPN 2SC3198G60V0.15A0.4W**NPN 2SC3265Y30V0.8A0.2W**NPN 2SC3271300V0.1A5W**NPN 2SC327930V2A0.75W**NPN 2SC3300100V15A100W**NPN 2SC3310500V5A40W20*NPN 2SC3320500V15A80W**NPN 2SC332880V2A0.9W**NPN 2SC335520V0.15A**6500MHZ NPN 2SC335820V0.15A**7000MHZ NPN 2SC339950V0.1A0.3W**NPN 2SC340250V0.1A0.3W**NPN 2SC3413C40V0.1A0.5W**NPN 2SC34571100V3A50W12*NPN 2SC34601100V6A100W12*NPN 2SC34801500V 3.5A80W**NPN 2SC34811500V5A120W**NPN 2SC34821500V6A120W**NPN 2SC34841500V 3.5A80W**NPN 2SC34851500V5A120W**NPN 2SC34861500V6A120W**NPN 2SC3505900V6A80W12*NPN 2SC3527500V15A100W13*NPN 2SC359530V0.5A 1.2W90*NPN 2SC3679900V5A100W**NPN 2SC3680900V7A120W**NPN 2SC36851500V6A120W**NPN 2SC36861500V7A120W**NPN2SC36881500V10A150W**NPN2SC37201200V10A200W**NPN2SC37291500V5A50W**NPN2SC3783900V5A100W**NPN2SC38035V0.03A0.25W**NPN2SC380730V2A 1.2W*260MHZ NPN2SC38320V0.05A0.2W**NPN2SC3858200V17A200W*20MHZ NPN2SC3866900V3A40W**NPN2SC3873500V12A75W*30MHZ NPN2SC38831500V5A50W**NPN2SC38861400V8A50W*8MHZ NPN2SC388A20V0.02A0.2W**NPN2SC38931400V8A50W*8MHZ NPN2SC3907180V12A130W*30MHZ NPN2SC3953120V0.2A 1.3W*400MHZ NPN2SC398750V3A20W1000*NPN(达林顿) 2SC39971500V15A250W**NPN2SC39981500V25A250W**NPN2SC4024100V10A35W**NPN2SC40350V0.1A0.1W**NPN2SC403850V0.1A0.3W*180MHZ NPN2SC4059600V15A130W**NPN2SC4106500V7A50W*20MHZ NPN2SC41111500V10A250W**NPN2SC41191500V15A250W**NPN2SC4199A1500V10A100W**NPN2SC4231800V2A30W**NPN2SC4242450V7A40W**NPN2SC42881400V12A200W**NPN2SC42911500V5A100W**NPN2SC42921500V6A100W**NPN2SC4297500V12A75W**NPN2SC4303A1500V6A80W**NPN2SC44291100V8A60W**NPN2SC4517550V3A30W**NPN2SC4582600V15A75W**NPN2SC458D30V0.1A0.2W**NPN2SC4706900V14A130W*6MHZ NPN2SC47421500V6A50W**NPN(带阻尼) 2SC47451500V6A50W**NPN2SC47471500V10A50W**NPN2SC47691500V7A60W**NPN(带阻尼) 2SC49132000V0.2A35W**NPN2SC4924800V10A70W**NPN2SC49271500V8A50W**NPN2SC49411500V6A65W**NPN2SC495Y70V0.8A5W**NPN2SC50201000V7A100W**NPN2SC50681500V10A50W**NPN2SC50861500V10A50W**NPN2SC50881500V10A50W**NPN2SC51321500V16A50W**NPN2SC5200230V15A150W**NPN2SC52071500V10A50W**NPN2SC52431500V15A200W**NPN2SC52441500V15A200W**NPN2SC52501000V7A100W**NPN2SC52511500V12A50W**NPN2SC52521500V15A100W**NPN2SC536F40V0.1A0.25W**NPN2SC752G40V0.2A0.2W**NPN2SC81560V0.2A0.25W**NPN2SC82845V0.05A0.25W**NPN2SC90030V0.03A0.25W*100MHZ NPN2SC94550V0.1A0.25W**NPN2SD2SD101050V0.05A0.3W**NPN 2SD10161500V7A50W**NPN2SD1025200V8A50W**NPN(达林顿) 2SD1037150V30A180W**NPN2SD1047160V12A100W**NPN2SD107850V2A20W**NPN2SD113370V4A40W**NPN2SD1138C150V2A30W**NPN2SD11421500V 3.5A50W**NPN2SD11431500V5A65W**NPN2SD1163A350V7A40W*60MHZ NPN2SD11721500V5A65W**NPN2SD11731500V5A70W**NPN2SD11741500V5A85W**NPN2SD11751500V5A100W**NPN2SD11751500V5A100W**NPN2SD12191500V3A65W**NPN2SD122660V3A35W**NPN2SD124630V2A0.75W**NPN2SD1264A200V2A30W**NPN2SD126660V3A35W**NPN2SD1271A130V7A40W**NPN2SD127380V3A40W*50MHZ NPN2SD1274A150V5A40W**NPN2SD12901500V3A50W**NPN2SD130225V0.5A0.5W*200MHZ NPN2SD13411500V5A50W**NPN2SD13421500V5A50W**NPN2SD13911500V5A80W**NPN2SD13961500V 2.5A50W**NPN2SD13971500V 3.5A50W**NPN2SD13981500V5A50W**NPN2SD13991500V6A60W**NPN2SD14021500V5A120W**NPN2SD14031500V6A50W**NPN2SD1405Y50V3A30W**NPN2SD14101500V 3.5A80W**NPN2SD141580V7A40W6000*NPN(达林顿) 2SD141680V7A40W6000*NPN(达林顿) 2SD14261500V 3.5A80W**NPN2SD14261500V 3.5A80W**NPN2SD14271500V5A80W**NPN2SD14281500V6A80W**NPN2SD14311500V5A80W**NPN2SD14311500V5A80W**NPN2SD14321500V6A80W**NPN2SD14331500V7A80W**NPN2SD14341700V5A80W**NPN2SD14541700V4A50W**NPN2SD14551500V5A50W**NPN2SD14551500V5A50W**NPN2SD14561500V6A50W**NPN2SD148080V4A25W**NPN2SD14971500V6A50W**NPN2SD1499100V5A40W**NPN2SD15411500V3A50W**NPN2SD15411500V3A50W**NPN2SD15441500V 3.5A40W**NPN2SD15451500V5A50W**NPN2SD15461500V6A50W**NPN2SD15471500V7A50W**NPN2SD15481500V10A50W**NPN2SD15541500V 3.5A40W**NPN2SD15551500V5A50W**NPN2SD15561500V6A50W**NPN2SD1559100V20A20W5000*NPN(达林顿) 2SD15771500V5A80W**NPN2SD158560V3A15W**NPN2SD1590150V8A25W15000*NPN(达林顿) 2SD16321500V4A70W**NPN2SD16351500V5A100W**NPN2SD1640120V2A 1.2W4000-40000*NPN(达林顿) 2SD16501500V 3.5A50W**NPN2SD16541500V 3.5A50W**NPN2SD16551500V5A60W**NPN2SD16561500V6A60W**NPN2SD17101500V6A100W**NPN2SD17111500V7A100W**NPN2SD1718180V15A 3.2W*20MHZ NPN2SD17291500V 3.5A60W**NPN2SD17301500V5A100W**NPN2SD17311500V6A100W**NPN2SD17321500V7A120W**NPN2SD17371500V 3.5A60W**NPN2SD17381500V5A100W**NPN2SD17391500V6A100W**NPN2SD176260V3A25W*90MHZ NPN2SD184750V1A1W**NPN(低噪) 2SD18761500V3A50W**NPN2SD1877800V4A50W**NPN2SD18781500V5A60W**NPN2SD18791500V6A60W**NPN2SD18801500V8A70W**NPN2SD18811500V10A70W**NPN2SD18821500V3A50W**NPN2SD18831500V4A50W**NPN2SD18841500V5A60W**NPN2SD18851500V6A60W**NPN2SD18861500V8A70W**NPN2SD18871500V10A70W**NPN2SD19111500V5A50W**NPN2SD1930100V2A 1.2W1000*NPN(达林顿) 2SD19411500V6A50W**NPN2SD1975180V15A150W**NPN2SD1978120V 1.5A1W30000*NPN(达林顿) 2SD1980100V2A10W1000-10000*NPN(达林顿) 2SD199350V0.1A0.4W**NPN2SD199460V1A1W**NPN2SD199740V3A 1.5W*100MHZ NPN2SD200880V1A 1.5W**NPN2SD201260V3A2W**NPN2SD20271500V5A50W**NPN2SD203660V1A 1.2W**NPN2SD20571500V5A100W**NPN2SD2155180V15A150W**NPN2SD2156120V25A125W2000-20000*NPN(达林顿) 2SD23341500V5A80W**NPN2SD23351500V7A100W**NPN2SD24451500V12.5A120W**NPN2SD32550V3A25W**NPN2SD3481500V7A50W**NPN2SD3505900V6A50W**NPN2SD385100V7A30W**NPN(达林顿) 2SD40025V1A0.75W**NPN2SD401AK200V2A25W**NPN2SD40C40V0.5A40W**NPN(达林顿) 2SD415120V0.8A5W**NPN2SD438500V1A0.75W*100MHZ NPN2SD547600V50A400W**NPN2SD553Y70V7A40W**NPN2SD560150V5A30W**NPN(达林顿) 2SD601AR60V0.1A0.2W**NPN2SD667120V1A0.9W*140MHZ NPN(达林顿) 2SD669180V 1.5A1W*140MHZ NPN2SD77320V2A1W**NPN2SD774100V1A1W**NPN2SD78720V2A0.9W**NPN2SD78820V2A0.9W**NPN2SD789100V1A0.9W**NPN2SD802900V6A50W**NPN2SD8191500V 3.5A50W**NPN2SD8201500V5A50W**NPN2SD8211500V6A50W**NPN2SD8221500V7A50W**NPN2SD8382500V3A50W**NPN2SD8501500V3A25W**NPN2SD8521500V5A70W**NPN2SD8691500V 3.5A50W**NPN2SD8691500V 3.5A50W**NPN2SD8701500V5A50W**NPN2SD8701500V5A50W**NPN2SD8711500V6A50W**NPN2SD8711500V6A50W**NPN2SD88060V3A30W**NPN2SD880660V3A30W**NPN2SD88240V3A10W**NPN2SD898B1500V3A50W**NPN2SD899A1500V4A50W**NPN2SD900B1500V5A50W**NPN2SD9031500V7A50W**NPN2SD9041500V7A60W**NPN2SD9051400V8A50W**NPN2SD9061400V8A50W**NPN2SD9501500V 3.5A80W**NPN2SD9511500V3A65W**NPN2SD9531500V7A95W**NPN2SD9541500V5A95W**NPN2SD957A1500V6A50W**NPN2SD96540V5A0.75W**NPN2SD96660V5A1W**NPN2SD97330V1A1W**NPN2SD9941500V8A50W**NPN2SD9952500V3A50W**NPN2SDK55400V4A60W**NPN2SK2SK301-Q*0.14A0.25W**N沟场效应管2SK301-R*0.14A0.25W**N沟场效应管BC BC30750V0.2A0.3W**PNP BC32750V0.8A0.6W**PNPBC33750V0.8A0.6W**NPNBC33850V0.8A0.6W**NPNBC54680V0.2A0.5W**NPNBC54750V0.2A0.5W*300MHZ NPNBC548B30V0.2A0.5W**NPNBC63645V1A0.8W**PNP BD BD13545V 1.5A12.5W**NPN BD13645V 1.5A12.5W**PNPBD13760V 1.5A12.5W**NPNBD13860V 1.5A12.5W**PNPBD237100V2A25W**NPNBD238100V2A25W**PNPBD24345V6A65W**NPNBD24445V6A65W**PNPBD681100V4A40W**NPNBD682100V4A40W**PNPBD941F120V3A19W**NPN BF BF32430V0.26A0.25W**PNP BF458250V0.1A10W**NPN BS BS17060V0.3A0.63W**NMOS场效应BU（*）BU1081500V5A12.5W**NPN BU208A1500V5A12.5W**NPNBU208D1500V5A12.5W**NPNBU209A1700V5A12.5W**NPNBU25061500V7A50W**NPNBU2508700V8A125W**NPNBU2520800V10A150W**NPNBU25221500V11A150W**NPNBU25251500V12A150W**NPNBU25271500V15A150W**NPNBU25321500V15A150W**NPNBU3081500V5A12.5W**NPNBU323450V10A125W**NPN(达林顿)BU406400V7A60W**NPNBU508A1500V7.5A75W**NPNBU508A1500V8A125W**NPNBU806400V8A60W**NPNBU932R500V15A150W**NPNBUH5151500V10A80W**NPNBUS13A1000V15A175W**NPNBUS14A1000V30A250W**NPNBUT111500V5A80W**NPNBUT11A1000V5A100W**NPNBUT12A450V10A125W**NPNBUV2690V14A65W**NPNBUV28A225V10A65W**NPNBUV48A450V15A150W**NPNBUW13A1000V15A150W**NPNBUX84800V2A40W**NPNBUX98A400V30A210W**NPNBUY712200V2A40W**NPNBUZ11A50V25A75W**NMOS场效应BUZ20100V12A75W**NMOS场效应DTC DTC114ES50V0.1A0.25W**NPN DTC124ES50V0.1A0.25W**PNP IRF IRF130100V14A79W**NMOS场效应IRF230200V9A79W**NMOS场效应IRF440500V8A125W**NMOS场效应IRF530100V14A79W**NMOS场效应IRF540100V28A150W**NMOS场效应IRF54180V28A150W**NMOS场效应IRF610200V 3.3A43W**NMOS场效应IRF630200V9A75W**NMOS场效应IRF640200V18A125W**NMOS场效应IRF720400V 3.3A50W**NMOS场效应IRF730400V 5.5A75W**NMOS场效应IRF740400V10A125W**NMOS场效应IRF830500V 4.5A75W**NMOS场效应IRF840500V8A125W**NMOS场效应IRF9530100V12A75W**PMOS场效应IRF953160V12A75W**PMOS场效应IRF954160V19A125W**PMOS场效应IRF9610200V1A20W**PMOS场效应IRF9630200V 6.5A75W**PMOS场效应IRFBC20600V 2.5A50W**NMOS场效应IRFBC30600V 3.6A74W**NMOS场效应IRFBC40600V 6.2A125W**NMOS场效应IRFBE30800V 2.8A75W**NMOS场效应IRFD11360V0.8A1W**NMOS场效应IRFD120100V 1.3A1W**NMOS场效应IRFD12380V 1.1A1W**NMOS场效应IRFD9120100V1A1W**NMOS场效应IRFI730400V4A32W**NMOS场效应IRFI744400V4A32W**NMOS场效应IRFP05460V65A180W**NMOS场效应IRFP140100V30A150W**NMOS场效应IRFP150100V40A180W**NMOS场效应IRFP240200V19A150W**NMOS场效应IRFP250200V33A180W**NMOS场效应IRFP340400V10A150W**NMOS场效应IRFP350400V16A180W**NMOS场效应IRFP353350V14A180W**NMOS场效应IRFP440500V8A150W**NMOS场效应IRFP450500V14A180W**NMOS场效应IRFP460500V20A250W**NMOS场效应IRFP9140100V19A150W**PMOS场效应IRFP9240200V12A150W**PMOS场效应IRFPF40900V 4.7A150W**NMOS场效应IRFPG421000V4A150W**NMOS场效应IRFS9630200V 6.5A75W**PMOS场效应IRFU02050V15A42W**NMOS场效应MJ（E）MJ10012400V10A175W**NPN(达林顿) MJ10015400V50A200W**NPNMJ10016500V50A200W**NPNMJ10025850V20A250W**NPNMJ11032120V50A300W**NPNMJ11033120V50A300W**NPNMJ13333400V20A175W**NPNMJ15024400V16A250W**NPNMJ15025400V16A250W**PNPMJ295560V15A115W**PNPMJ305560V15A115W**NPNMJ450290V30A200W**PNPMJE13003400V 1.5A14W**NPNMJE13005400V4A60W**NPNMJE130071500V 2.5A60W**NPNMJE2955T60V10A75W**NPNMJE340300V0.5A20W**NPNMJE350300V0.5A20W**NPN MN MN6501500V6A80W**NPN RN RN120450V0.1A0.3W**NPN TIP TIP102100V8A2W**NPN TIP122100V8A65W**NPNTIP127100V8A65W**PNPTIP142100V10A125W**NPNTIP147100V10A125W**PNPTIP31C100V3A40W**NPNTIP32C100V3A40W**PNPTIP35C100V25A125W**NPNTIP36C100V25A125W**PNPTIP41C100V6A65W**NPNTIP42C100V6A65W**PNP UN UN411150V0.1A0.25W**PNP UN421150V0.1A0.25W**NPNUN421250V0.1A0.25W**NPNUN421350V0.1A0.25W**NPN索引晶体管型号反压Vbeo电流Icm功率Pcm放大系数特征频率管子类型。
2SA2151A中文资料
2SA2151ADescriptionBy adapting the Sanken unique wafer-thinner technique, thesePNP power transistors achieve power-up by decreasing thermalresistance, and provide higher voltage avalanche breakdownrating. The high power-handling capacity of the TO-3P packageallows a smaller footprint on the circuit board design. Thisseries of transistors is very well suited to not only multichannelapplications for A V (audio-visual) amplifiers and receivers,but also parallel connection applications for PA (professionalaudio system) amplifiers.Applications include the following:▪Single transistors for audio amplifiers▪Home audio amplifiers▪Professional audio amplifiers▪Automobile audio amplifiers▪ Audio market▪Single transistors for general purposeFeatures and Benefits▪Small package (TO-3P)▪High power handling capacity, 160 W▪Improved sound output by reduced on-chip impedance▪For professional audio (PA) applications, V CEO = –230 Vversions available▪Complementary to 2SC6011A▪Recommended output driver: 2SA1668AAudio Amplification TransistorPackage: 3 Lead TO-3PAudio Amplification Transistor2SA2151A ELECTRICAL CHARACTERISTICS at T A = 25°CCharacteristicSymbol Test ConditionsMin.Typ.Max.Unit Collector-Cutoff Current I CBO V CB = –230 V –––10μA Emitter Cutoff Current I EBO V EB = –6 V –––10μA Collector-Emitter Voltage V (BR)CEOI C = –50 mA –230––V DC Current Transfer Ratio*h FE V CE = –4 V, I C = –3 A 50–180–Collector-Emitter Saturation Voltage V CE(sat)I C = –5 A, I B = –0.5 A –––0.5V Cutoff Frequency f T V CE = –12 V, I E = 0.5 A–20–MHz Output CapacitanceC OBV CB = –10 V, I E = 0 A, f = 1 MHz–450–pF*h FE rating: 50 to 100 (O brand on package), 70 to 140 (P), 90 to 180 (Y).ABSOLUTE MAXIMUM RATINGS at T A = 25°CCharacteristicSymbol Rating Unit Collector-Base Voltage V CBO –230V Collector-Emitter Voltage V CEO –230V Emitter-Base Voltage V EBO –6V Collector Current I C –15A Base CurrentI B –4A Collector Power Dissipation P C 160W Junction Temperature T J 150°C Storage TemperatureT stg–55 to150°CSELECTION GUIDEPart NumberTypeh FE RatingPacking2SA2151A*PNPRange O: 50 to 100Bulk, 100 pieces Range P: 70 tp 140Range Y: 90 to 180*Specify h FE range when ordering. If no h FE range is specified, order will be fulfilled with either or both range O and range Y , depending upon availability.Audio Amplification Transistor2SA2151APerformance Characteristics–I C (A )I C vs.V CEI C vs.V BE–V CE =4V Continuous–I C (A )05h FE vs. I C–V CE =4V Continuous–I C (A)h F Et (ms)Audio Amplification Transistor2SA2151A–I C (A )–V CE (V)Safe Operating AreaT A = 25°C, single pulse, no heatsink, natural cooling 102030f T vs. I E –V CE = 12 V Continuousf T (M H z )I E (A)P C vs. T AT A (°C)Performance Characteristics, continuedAudio Amplification Transistor2SA2151ATerminal core material: CuTerminal treatment: Ni plating and solder dip Heat sink core material: Cu Heat sink treatment: Ni plating Leadform number: 100Dimensions in millimetersBranding codes (exact appearance at manufacturer discretion):1st line, type: A2151A2nd line, lot: YM H Where: Y is the last digit of the year of manufacture M is the month (1 to 9, O, N, D )H is the h FE rating (O, P , or Y ; for values see footnote, Electrical Characteristics table)PACKAGE OUTLINE DRAWING, TO-3PLeadframe plating Pb-free. Device composition includes high-temperature solder (Pb >85%), which is exempted from the RoHS directive.Audio Amplification Transistor 2SA2151ABecause reliability can be affected adversely by improper storage environments and handling methods, please observe the following cautions.Cautions for Storage• Ensure that storage conditions comply with the standard temperature (5°C to 35°C) and the standard relative humidity(around 40 to 75%); avoid storage locations that experienceextreme changes in temperature or humidity.• Avoid locations where dust or harmful gases are present and avoid direct sunlight.• Reinspect for rust on leads and solderability of products that have been stored for a long time.Cautions for Testing and HandlingWhen tests are carried out during inspection testing and otherstandard test periods, protect the products from power surgesfrom the testing device, shorts between adjacent products, and shorts to the heatsink.Remarks About Using Silicone Grease with a Heatsink• When silicone grease is used in mounting this product on a heatsink, it shall be applied evenly and thinly. If more siliconegrease than required is applied, it may produce stress.• Coat the back surface of the product and both surfaces of the insulating plate to improve heat transfer between the product and the heatsink.• Volatile-type silicone greases may permeate the product and produce cracks after long periods of time, resulting in reducedheat radiation effect, and possibly shortening the lifetime of theproduct.• Our recommended silicone greases for heat radiation purposes, which will not cause any adverse effect on the product life, areindicated below:Type SuppliersG746Shin-Etsu Chemical Co., Ltd.YG6260GE Toshiba Silicone Co., Ltd.SC102Dow Corning Toray Silicone Co., Ltd.Heatsink Mounting Method• Torque When Tightening Mounting Screws. Thermal resistance increases when tightening torque is low, and radiation effects are decreased. When the torque is too high, the screw can strip, the heatsink can be deformed, and distortion can arise in the product frame.To avoid these problems, observe the recommended tightening torques for this product package type, TO-3P (MT-100): 0.686 to 0.882 N•m (7 to 9 kgf•cm).• Diameter of Heatsink Hole: < 4 mm. The defl ection of the press mold when making the hole may cause the case material to crack at the joint with the heatsink. Please pay special attention for this effect.Soldering• When soldering the products, please be sure to minimize the working time, within the following limits:260±5°C 10 s350±5°C 3 s• Soldering iron should be at a distance of at least 1.5 mm from the body of the productsElectrostatic Discharge• When handling the products, operator must be grounded.Grounded wrist straps worn should have at least 1 MΩ ofresistance to ground to prevent shock hazard.• Workbenches where the products are handled should begrounded and be provided with conductive table and floor mats.• When using measuring equipment such as a curve tracer, the equipment should be grounded.• When soldering the products, the head of soldering irons or the solder bath must be grounded in other to prevent leak voltagesgenerated by them from being applied to the products.• The products should always be stored and transported in our shipping containers or conductive containers, or be wrapped inaluminum foil.Audio Amplification Transistor 2SA2151AThe products described herein are manufactured in Ja p an by Sanken Electric Co., Ltd. for sale by Allegro MicroSystems, Inc.Sanken and Allegro reserve the right to make, from time to time, such de p ar t ures from the detail spec i f i c a t ions as may be re q uired to per m it im-p rove m ents in the per f or m ance, reliability, or manufacturability of its prod u cts. Therefore, the user is cau t ioned to verify that the in f or m a t ion in this publication is current before placing any order.When using the products described herein, the ap p li c a b il i t y and suit a bil i t y of such products for the intended purpose shall be reviewed at the users responsibility.Although Sanken undertakes to enhance the quality and reliability of its prod u cts, the occurrence of failure and defect of semi c on d uc t or products at a certain rate is in e v i t a b le.Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to society due to device failure or malfunction.Sanken products listed in this publication are designed and intended for use as components in general-purpose electronic equip m ent or apparatus (home ap p li a nc e s, office equipment, tele c om m u n i c a t ion equipment, measuring equipment, etc.). Their use in any application requiring radiation hardness assurance (e.g., aero s pace equipment) is not supported.When considering the use of Sanken products in ap p li c a t ions where higher reliability is re q uired (transportation equipment and its control systems or equip m ent, fire- or burglar-alarm systems, various safety devices, etc.), contact a company sales representative to discuss and obtain written confirmation of your spec i f i c a t ions.The use of Sanken products without the written consent of Sanken in applications where ex t reme l y high reliability is required (aerospace equip-ment, nuclear power-control stations, life-support systems, etc.) is strictly prohibited.The information in c lud e d herein is believed to be accurate and reliable. Ap p li c a t ion and operation examples described in this pub l i c a t ion are given for reference only and Sanken and Allegro assume no re s pon s i b il i t y for any in f ringe m ent of in d us t ri a l property rights, intellectual property rights, or any other rights of Sanken or Allegro or any third party that may result from its use.Anti radioactive ray design is not considered for the products listed herein.Copyright © 2006 Allegro MicroSystems, Inc.This datasheet is based on Sanken datasheet SSE-23014。
2SD2150中文资料
TransistorsRev.A 1/3Low Frequency Transistor (20V, 3A)2SD2150z Features 1) Low V CE(sat).V CE(sat) = 0.2V(Typ.) （I C / I B = 2A / 0.1A ）2) Excellent current gain characteristics. 3) Complements the 2SB1424.z StructureEpitaxial planar type NPN silicon transistorz External dimensions (Unit : mm)Denotes h FEz Absolute maximum ratings (T a=25°C)ParameterV CBO V CEO V EBO I CP C Tj Tstg40V V V A (DC)W W°C °C2063 A (Pulse)50.52∗1∗2150−55 to +150Symbol Limits Unit ∗1 Single pulse Pw =10ms∗2 Mounted on a 40×40×0.7mm Ceramic substrate.Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector currentCollector power dissipation Junction temperature Storage temperatureTransistorsRev.A 2/3z Electrical characteristics (T a=25°C)ParameterSymbol BV CBO BV CEO BV EBO I CBO I EBO h FE V CE(sat)f T CobMin.40206−−120−−−−−−−−−0.229025−−−0.10.15600.5−−V I C =50µA I C =1mA I E =50µA V CB =30V V EB =5VV CE =2V, I C =0.1AI C /I B =2A/0.1A V CE =2V, I E = −0.5A, f =100MHz V CE =10V, I E =0A, f =1MHzV VµA µA −V ∗MHz pFTyp.Max.Unit Conditions∗ Measured using pulse current.Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff currentDC current transfer ratio Collector-emitter saturation voltageTransition frequency Output capacitancez Packaging specifications and h FEPackage CodeT1001000Taping Basic ordering unit (pieces)RSh FE 2SD2150Typeh FE values are classified as follows :Item h FER 180 to 390S 270 to 560z Electrical characteristic curvesC O L L E C T O R C U R R E N T : I C (A )BASE TO EMITTER VOLTAGE : V BE (V)Fig.1 Grounded emitter propagationcharacteristicsC O L L E C T O R C U R R E N T : I C(A )COLLECTOR TO EMITTER VOLTAGE : V CE (V)Fig.2 Grounded emitter outputcharacteristics ( ) C O L L E C T O R C U R R E N T : I C (A )COLLECTOR TO EMITTER VOLTAGE : V CE (V)Fig.3 Grounded emitter outputcharacteristics ( )TransistorsRev.A 3/3D C C U R RE N T G A I N : hF ECOLLECTOR CURRENT : I C (A)Fig.4 DC current gain vs.collector currentC O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )COLLECTOR CURRENT : I C (A)Fig.6 Collector-emittersaturation voltage vs.collector curren ( )C O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )COLLECTOR CURRENT : I C (A)Fig.5 Collector-emittersaturation voltage vs. collector current ( )C O L L E C T O R O U T P U T C A P A C I T A N C E : C o b (p F )E M I T T E R I N P U T C A P A C I T A N C E : C i b (p F )COLLECTOR TO BASE VOLTAGE : V CB (V)EMITTER TO BASE VOLTAGE : V EB (V)Fig.9 Collector output capacitance vs.collector-base voltageEmitter input capacitance vs.emitter-base voltageC O L L E C T O R S A T U R A T I O N V O L T A G E : V C E (s a t ) (V )COLLECTOR CURRENT : I C (A)Fig.7 Collector-emittersaturation voltage vs.collector current ( )T R A N S I T I O N F R E Q U E N C Y : f T (M H z )EMITTER CURRENT : I E (mA)Fig.8 Gain bandwidth product vs.emitter currentAppendixAbout Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.Appendix1-Rev1.1。
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Inchange Semiconductor Product Specification
Silicon NPN Power Transith TO-220F package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current peak Base current TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2.0 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 120 100 6 7 10 0.7 25 W UNIT V V V A A A
元器件交易网
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors
2SD1415A
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=50mA; IB=0 IC=3A ;IB=6mA IC=3A ;IB=6mA VCB=100V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=3V IC=6A ; VCE=3V 2000 1000 MIN 100 0.9 1.5 1.5 2.0 100 3.0 15000 TYP. MAX UNIT V V V μA mA
Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=6mA VCC≈45V ,RL=15Ω 0.3 5.1 0.6 μs μs μs
2
元器件交易网
Inchange Semiconductor Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1415A
Fig.2 Outline dimensions
3