METHOD OF GROWING THIN FILM

专利名称：METHOD OF GROWING THIN FILM 发明人：NARA YASUO
申请号：JP16635287
申请日：19870703
公开号：JPS6410621A
公开日：
19890113
专利内容由知识产权出版社提供
摘要：PURPOSE:To realize the growth of a thin film whose crystallinity is good at a low temperature by a method wherein a raw material is irradiated with the light having energy corresponding to excitation of an inner shell of an atom constituting the raw material and an electron in the inner shell is excited. CONSTITUTION:When a raw material is decomposed, the energy of light 7 is utilized instead of the energy of heat; in addition, the energy which can excite an electron in an inner shell of an element constituting the raw material is selected. For example, in the case of SiH4, the ionization energy of the electron in the inner shell corresponding to a 2p orbit of an Si atom is about 107 eV; the ionization energy of the electron in the inner shell corresponding to a 2s orbit is about 157 ev. If the raw material 5 is irradiated with the light having this energy, an electron on an orbit in the inner shell is excited; as a result, a hole is made in the orbit in the inner shell; an electron in an outer shell falls into this hole; an electron in an outermost shell of a coupling hand falls to a level on its lower side; an SiH4 molecule is decomposed. By this setup, the raw material can be decomposed without using the energy of heat; a temperature to grow a thin film can be lowered. At the present time, the light having this high-level energy can be obtained, e.g., by irradiation using a synchrotron (SOR).
申请人：FUJITSU LTD
更多信息请下载全文后查看。