IRFI5210中文资料
ir2101中文资料
数据表PD60043典型连接具有浮动通道设计的引导操作完全可操作+600V耐受性负转换电压dV/dt免疫网关驱动电源范围从10个欠压锁定3.3V，5V，15V逻辑输入兼容匹配传播延迟两个通道输入（IR2101）输入（IR2102）描述高压，高速功率MOSFET-igbt 驱动器独立的高低压侧参考输出通道。
专有的HVIC latchimmune CMOS技术支持加固单片结构。
逻辑输入标准CMOS LSTLOUTPUT，下降3.3Vlogic。
输出驱动器具有高脉冲电流缓冲高低压侧驱动程序包产品概要偏置600V最大130mA 270mA输出10开/关（典型）160 150ns延迟匹配50 ns IR2101 IR2102 IR2101 LeadSOIC LeadPDIP阶段设计的最小驱动器交叉传导。
浮动沟道can N沟道功率MOSFET高侧配置，工作电压高达600伏。
网站HOLO-COM-HIN-LIN-HIN-up-HOLO-COM-HIN-LIN-HIN-up-CC（参考引线分配修正引脚配置）。
图表仅显示电气连接。
请参阅我们的应用注意事项电路板布局。
第二章：IR2101/符号定义最小最大单元高压侧浮动电源电压-0.3 625高压侧浮动电源偏移电压HO高压侧浮动输出电压CC低压侧逻辑固定电源电压-0.3 25 L低压侧输出电压-0.3逻辑输入电压（HIN LIN）-0.3 0.3dV/dt允许的偏移电源电压瞬变50V/ns包装功耗导线pdip）导线soic）0.625Rth JA热电阻，连接导线pdip）导线soic）接头温度存储温度-55 150导线温度（焊接，10秒）300绝对最大额定值绝对最大额定值指示持续极限，超过该极限值可能会发生损坏设备。
所有电压参数均为绝对电压参考的热电阻功率耗散额定值，在安装在板上的静止空气条件下测量。
SymbolDefinition 最小最大单位高压侧浮动电源绝对电压高压侧浮动电源偏移电压注HO高压侧浮动输出电压CCLow side logicfixed supply voltage 10 20 Low side output voltage Logicinput voltage （HIN LIN）（IR2101）LIN）（IR2102）环境温度-40 125注释逻辑操作+600V。
常用三极管参数大全
玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理玉林万顺达电脑芯片级维修资料 2010-07-20整理。
FR210中文资料
Oscilliscope Note 1
(+)
0A -.25A
Notes: 1 . Rise Time = 7 ns Max. Impedance = 1 megohm, 22 pF 2 . Rise Time = 10 ns Max. Source Impedance = 50 Ohms
-1.0A
1 cm Time Base Set @ 50/100ns/cm
Description
.031 typ.
Features
n FAST SWITCHING FOR HIGH EFFICIENCY n HIGH SURGE CAPABILITY n 2.0 AMP OPERATION @ TA = 55°C, WITH NO THERMAL RUNAWAY n MEETS UL SPECIFICATION 94V-0
FR20 . . . 210 Series Maximum Ratings Peak Repetitive Reverse Voltage...VRRM RMS Reverse Voltage...VR(rms) DC Blocking Voltage...VDC Average Forward Rectified Current...IF(av) TA = 55°C Non-Repetitive Peak Forward Surge Current...IFSM @ Rated Current & Temp Operating & Storage Temperature Range...TJ, TSTRG Electrical Characteristics Maximum Forward Voltage @ 2.0A...VF Maximum DC Reverse Current...IR @ Rated DC Blocking Voltage @ @ 25°C 100°C ............................................. 1.3 ............................................... FR20 50 35 50 FR21 100 70 100 FR22 200 140 200 FR24 400 280 400 FR26 600 420 600 FR28 800 560 800 FR210 1000 700 1000
爱立信PDG23N0150P2MN电源保护筋胶电路保护器说明书
Eaton PDG23N0150P2MNEaton Power Defense molded case circuit breaker, Globally Rated, Frame 2, Three Pole, 150A, 85kA/480V, PXR25 LSI w/ Modbus RTU and Relays, No TerminalsGeneral specificationsEaton Power Defense molded case circuit breakerPDG23N0150P2MN 78667927094388.9 mm 152.4 mm 104.6 mm 1.82 kg Eaton Selling Policy 25-000, one (1) year from the date of installation of theProduct or eighteen (18) months from thedate of shipment of the Product,whichever occurs first.RoHS Compliant UL 489IEC 60947-2CCC MarkedCSAProduct NameCatalog Number UPCProduct Length/Depth Product Height Product Width Product Weight WarrantyCompliancesCertifications150 AComplete breaker 2Three-polePD2 Global Class A PXR 25 LSIModbus RTU600 Vac600 VNo Terminals85 kAIC at 480 Vac 22 kAIC Icu @125 Vdc 150 kAIC @240V (UL) 22 kAIC Icu @250 Vdc65 kAIC Icu/ 40 kAIC Ics/ 143 kAIC Icm @480V Brazil (IEC) 30/25 kAIC @600V (UL/CSA)30/25 kAIC Icu/ 15/13 kAIC Ics @525V South Africa (IEC) 70 kAIC Icu/ 50 kAIC Ics/ 154 kAIC Icm @440V (IEC) 70 kAIC Icu/ 70 kAIC Ics/ 154 kAIC Icm @380-415V (IEC) 85 kAIC @480V (UL)150 kAIC Icu/ 100 kAIC Ics/ 330 kAIC Icm @240V (IEC) 10 kAIC Icu/ 5 kAIC Ics/ 21 kAIC Icm @690V (IEC) 25 kAIC @600V (UL/CSA)Eaton Power Defense MCCB PDG23N0150P2MN 3D drawingAmperage Rating Circuit breaker frame type Frame Number of poles Circuit breaker type Class Trip Type Communication Voltage rating Voltage rating - 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IRF540中文数据手册要点
IRF540中文数据手册要点IRF540 N沟道MOS管特性‘Thrench’工艺低的导通内阻快速开关低热敏电阻综述使用沟渠工艺封装的N通道增强型场效应功率晶体管应用：DC到DC转换器开关电源电视及电脑显示器电源IRF540中提供的是SOT78(TO220AB)常规铅的包裹。
IRF540S中提供的是SOT404(D PAK)表面安装的包裹。
管脚管脚 描述 1 Gate 2 Drain 3 Source Tab Drain极限值系统绝对最大值依照限制值 符号 参数条件最小值 最大值 单位 V_DSS V_DGR V_GS I_D I_DM P_D Tj ，Tsig漏源极电压 漏门极电压 门源极电压 连续漏电流 脉冲漏电流 总功耗 操作点和存储温度Tj= 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 k Ω Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C- - - -- -- -55100 100 ±20 23 16 92 100 175V V V A A A W ℃雪崩能量极限值符号参数 条件 最小值 最大值单位AS E ASI 非重复性Unclamped inductive load, IAS = 10 A;-230mJ雪崩能量最大非重复性雪崩电流tp = 350 µs; Tj prior to avalanche = 25˚C; VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer to fig:14 -23 A热敏电阻符号 参数 条件 最小值 典型值 最大值单位thj mb R -thj aR -安装底座交界处的热阻 周围环境热阻SOT78封装，自由空间 SOT404封装，PCB 上- ---60 50 1.5- -K/W K/W K/W电特性25℃ 除非另有说明 符号参数 条件 最小值 典型值最大值 单位 ()BR DSSV()GS TO V()DS ON Rfsg GSS I DSSI漏源极崩溃电压 门阀电压 漏源极GSV =0V ；D I =0.25mATj = -55˚C DSV = GSV ; ID = 1 mATj = 175˚C Tj = -55˚C GS V = 10 V; ID = 17 ATj = 175˚CDS V =25V; D I =17AGSV =±20 V;DSV =0VVDS = 100 V; VGS = 0 VVDS=80V;VGS=0V;Tj= 175˚C100 8921 -- 8.7 - - --- 3 - - 49 132 15.510 0.05 -- - 4 - 6 77 193 -100 10250 V V V V V m Ω m Ω S nAuA uA通电阻向前跨导 门源极泄漏电流 0门极电压漏电流()g tot Q gsQ gdQ总共门极电荷 门ID = 17 A VDD = 80 V; VGS = 10 V - - -- - -65 10 29 nC nC nC极电荷 门漏极电荷d onT r TdoffT fT开启延迟时间 开启上沿时间 关DD V = 50 V; D R = 2.2 Ω; DDV = 10 V;GR = 5.6 ΩResistive load- - - -8 39 26 24- - - -ns ns ns ns延迟时间 关闭下沿时间d L dLsL内部漏电感 内部漏电感Measured tab to centre of dieMeasured from drain lead to centre of die (SOT78 package only)Measured from source lead to source bond pad - -- 3.5 4.5 7.5- - -nH nH nH部源极电感iSS CoSS C rSSC 输入电容 输出电容 反馈电容GSV = 0 V; S D V = 25 V; f = 1 MHz -- -890 139 831187 167 109 pF pF pF反向二极管极限值及特性符号 参数条件 最小值 典型值最大值 单位 SI SM I DSV 连续源极电流 脉冲源极电流 二极管正向FI =28A ； GSV =0V- - -- -0.94 23 921.5 A AV电压t rrrrQ 反向恢复之间 反向恢复命令 FI =17A ；GSV =0V; -d F I /dt=100A/us;RV =25V - -61200 - -ns nC底座温度-自然功率降低百分比图1：自然功率损耗底座温度-漏电流降低百分比图2 ：自然持续漏电流漏源极电压-脉冲漏极电流峰值图3 ：安全操作区域脉宽-瞬态热阻抗图4：瞬态热阻抗漏源极电压-漏极电流图5：典型输出特性漏极电流-漏源极导通阻抗图6：典型导通阻抗图7：典型传递特性图8：典型跨导图9：漏源极导通阻抗图10：门阀电压图11：阈漏极电流图12：典型电容值图13：典型的反向二极管电流图14：最大允许非重复性雪崩电流(IAS)和雪崩的时间。
IR2102中文资料
°C
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.
Symbol
VB VS VHO VCC VLO VIN TA
Definition
High side floating supply absolute voltage High side floating supply offset voltage High side floating output voltage Low side and logic fixed supply voltage Low side output voltage Logic input voltage (HIN & LIN) (IR2101) & (HIN & LIN) (IR2102) Ambient temperature
Functional Block Diagram
VB Q PULSE FILTER R S VS HO
HV LEVEL SHIFT
HIN
PULSE GEN UV DETECT
VCC
LIN
LO
COM
IR2101/IR21014
Packages
8 Lead SOIC
14 Lead SOIC
ir2101中文资料_数据手册_参数
8-Lead SOIC IR2101S/IR2102S
8-Lead PDIP IR2101/IR2102
input is compatible with standard CMOS or LSTTL
output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum
Min.
VS + 10 Note 1
VS 10 0 0 -40
Max.
VS + 20 600 VB 20 VCC VCC 125
Units
V °C
Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to the Design Tip DT97-3 for more details).
driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in
the high side configuration which operates up to 600 volts.
IO+/-
130 mA / 270 mA
VOUT
10 - 20V
ton/off (typ.)
160 & 150 ns
Delay Matching
50 ns
phase with inputs (IR2102)
IR2110相关知识(精华版)
请问怎么确定IR2110能驱动多大的MOS管啊？手册上IR2110的输出电压是10-20V，电流是2A，MOS管是电压驱动型，要2A的电流有什么用啊？随着PWM技术在变频、逆变频等领域的运用越来越广泛，以及IGBT、Power MOSFET等功率性开关器件的快速发展，使得PWM控制的高压大功率电源向着小型化、高频化、智能化、高效率方向发展。
本文采用电压脉宽型PWM控制芯片SG3525A，以及高压悬浮驱动器IR2110，用功率开关器件IGBT模块方案实现高频逆变电源。
另外，用单片机控制技术对此电源进行控制，使整个系统结构简单，并实现了系统的数字智能化。
SG3525A性能和结构SG3525A是电压型PWM集成控制器，外接元器件少，性能好，包括开关稳压所需的全部控制电路。
其主要特性包括：外同步、软启动功能；死区调节、欠压锁定功能；误差放大以及关闭输出驱动信号等功能；输出级采用推挽式电路结构，关断速度快，输出电流±400mA；可提供精密度为5V±1%的基准电压；开关频率范围100Hz~400KHz。
其内部结构主要包括基准电压源、欠压锁定电路、锯齿波振荡器、误差放大器等，如图1所示。
IR2110性能和结构IR2110是美国IR公司生产的高压、高速PMOSFET和IGBT的理想驱动器。
该芯片采用HVIC和闩锁抗干扰制造工艺，集成DIP、SOIC封装。
其主要特性包括：悬浮通道电源采用自举电路，其电压最高可达500V；功率器件栅极驱动电压范围10V~20V；输出电流峰值为2A; 逻辑电源范围5V~20V，而且逻辑电源地和功率地之间允许+5V的偏移量；带有下拉电阻的COMS施密特输入端，可以方便地与LSTTL和CMOS电平匹配；独立的低端和高端输入通道，具有欠电压同时锁定两通道功能; 两通道的匹配延时为10ns；开关通断延时小，分别为120ns和90ns;工作频率达500kHz。
其内部结构主要包括逻辑输入，电平转换及输出保护等，如图2所示。
REAL210资料
REAL210核心板：CPU内核：ARM Cortex-A8主频：1GHz支持NEON指令支持MPEG-4/MPEG2、H.264/H263、VC-1、DivX的视频编解码1080p@30fps支持2D图形加速，最大支持8000×8000分辨率支持3D图形加速（Power VR SGX540），OpenGL-1.1&2.0、OpenVG1.0支持SD/MMC/SDIO接口存储卡，最高支持32GB支持JPEG硬件编解码，最大支持8192×8192分辨率·内存：4G bits DDR2·Flash：2G bits SLC NAND FLASHH·集成单片电源管理芯片（PMIC），并非难买价格昴贵的MAXIM电源芯片，而是高度可配制的WOLFSON电源单片解决方案，可自行定制缺省启动电压和DVS电源调节。
并具有750MA锂电池充电功能（带有电池电量检测和电池温度检测）·集成100M以太网卡·集成AC97接口HIFI声卡,多路音频通道支持，支持智能手机多路音频连接·系统总线扩展接口，16位总线和地址线，2路片选及半字和字节读写信号·230脚TQFP封装，带有独立测试架测试点，核心板用户可据量提供测试架。
REAL210底板：·板载RTC，可充电锂电池，并非一般开发板的非可充电方式，且体积巨小·板载标准JTAG接口·板载1个独立CAMERA接口·板载RS232串口×２、TTL UART*2,RS485串口×1·外扩I2C、SPI、PWM、AD/DA等接口·支持8×8矩阵键盘接口，板载5个Android专用键盘·板载2个USB HOST 2.0，1个USB OTG 2.0接口·板载2个SDIO接口（1个SD卡接口，1个SDIO wifi接口）·板载TV-OUT、HDMI、VGA、 RGB四种显示接口·支持4.3寸、7寸、8寸，9.7寸或以上，RGB/LVDS多款液晶模块·支持电阻式触摸屏与电容式触摸屏·板载CAN总线接口·板载模拟CCD摄像头接口·板载SIRF 4代GPS模块·板载WIFI/BT二合一模块·板载MiniPCI接口WCDMA/CDMA2000/TD-CDMA等多种制式3G模块·板载工业级GSM/GPRS，支持GSM通话/短信/GPRS上网，是目前市场上唯一支持Android语音通话与短信功能的开发板！Real210软件参数：Bootloader：·u-boot-1.3.4·支持cramfs/yaffs镜像烧写·支持100M以太网下载·支持USB下载·支持NAND FLASH启动·支持SD启动·支持fastboot协议下载烧写Android系统Linux内核：·内核版本：Linux-2.6.32/Linux-2.6.35·LCD驱动·LCD背光驱动·VGA显示驱动·电阻式触摸屏驱动·HDMI驱动·HSMMC/SD/MMC/SDIO驱动·IIC驱动·SPI驱动·KEYBD驱动程序·AUDIO音频驱动，支持AC97和IIS·DMA驱动·RTC实时时钟驱动·USB HOST/DEVICE驱动·JPEG硬件编解码驱动·MFC多媒体硬件编解码驱动，支持MPEG-4/MPEG2、H.264/H263、VC-1、DivX 等格式·CMOS/CCD Camera驱动·ROTATOR屏幕旋转驱动·2D硬件加速驱动·3D硬件加速驱动·以太网驱动·SD卡驱动，最大支持32G·3G驱动·SDIO WIFI驱动·BT驱动·电容式触摸屏驱动·电源管理驱动·USB ADB驱动，可以进行ADB调试,同时把开办板当U盘使用Android-2.2/Android-2.3：·支持BT·支持以太网上网·支持WIFI上网·支持3G上网·支持GPRS上网·支持GSM语音通话，短信·支持HDMI输出·支持VGA输出·支持CMOS/CCD Camera拍照与视频录制·支持硬件视频编解码，H263/H264/MPEG4/VC1·支持硬件JPEG编解码·支持硬件2D/3D加速·支持GPS，支持电子地图·支持LCD背光调节·支持系统休眠与唤醒·支持USB ADB·提供应用程序控制LED例程·支持SD卡扩展·支持音频播放与录制·支持APP Market补充说明：开发板配置以REAL210V6.2（终极版）为官方标配为准，包含（但不仅限于）下述功能：·Android4.0全新体验·锂电池3.7-4.2V充电，电源路径管理·增强Sleep，唤醒支持·单键开关机·增加Flash到8GB，并外置ECC处理·增加LVDS接口（在底板上），背光可调·板载Camera摄像头，并置闪光灯·单USB调试烧写（不再使用USB转串口线和DB9）·AVIN进一步加强，720*576@30Hz·电容CTP更新，增加三个常用电容按键·电话功能，采用PCM传输，增强音频效果·增加指南针，陀螺仪、加速传感器支援·7寸电容屏（1280*800分辨率或以上）增加开发板选配模块（包含但不仅限于）：·GPS模块·WIFI模块·GPRS模块·CMOS、CCD摄像头·板载蓝牙或外置蓝牙模块·3G模块·便携式锂电池其他资料：·产品使用详细说明·配套开发软件与驱动·Linux/Android开发、案例等配套视频开发板数量为9-10台。
ir2104中文资料_数据手册_参数
Symbol
VB VS VHO VCC VLO VIN TA
Definition
High side floating supply absolute voltage High side floating supply offset voltage High side floating output voltage Low side and logic fixed supply voltage Low side output voltage Logic input voltage (IN & SD ) Ambient temperature
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential.
dV/dt immune
• Gate drive supply range from 10 to 20V • Undervoltage lockout • 3.3V, 5V and 15V input logic compatible • Cross-conduction prevention logic • Internally set deadtime • High side output in phase with input • Shut down input turns off both channels • Matched propagation delay for both channels • Also available LEAD-FREE
FAIRCHILD FCI25N60N 说明书
tmJune 2010FCI25N60N_F102 N-Channel MOSFET ©2010 Fairchild Semiconductor Corporation 1SupreMOS TM FCI25N60N_F102N-Channel MOSFET600V, 25A, 0.125ΩFeatures•R DS(on) = 0.107Ω ( Typ.)@ V GS = 10V, I D = 12.5A•Ultra Low Gate Charge ( Typ. Qg = 57nC)•Low Effective Output Capacitance•100% Avalanche Tested•RoHS CompliantDescriptionThe SupreMOS MOSFET, Fairchild’s next generation of highvoltage super-junction MOSFETs, employs a deep trench fillingprocess that differentiates it from preceding multi-epi based tech-nologies. By utilizing this advanced technology and precise pro-cess control, SupreMOS provides world class Rsp, superiorswitching performance and ruggedness.This SupreMOS MOSFET fits the industry’s AC-DC SMPSrequirements for PFC, server/telecom power, FPD TV power,ATX power, and industrial power applications.DGSMOSFET Maximum Ratings TC = 25o C unless otherwise noted*Thermal CharacteristicsSymbol Parameter FCI25N60N_F102Units V DSS Drain to Source Voltage600VV GSS Gate to Source Voltage±30VI D Drain CurrentContinuous (T C = 25o C)25AContinuous (T C = 100o C)16I DM Drain Current Pulsed (Note 1)75AE AS Single Pulsed Avalanche Energy (Note 2)861mJI AR Avalanche Current 8.3AE AR Repetitive Avalanche Energy 2.2mJdv/dtPeak Diode Recovery dv/dt (Note 3)20V/ns MOSFET dv/dt100P D Power Dissipation(T C = 25o C)216WDerate above 25o C 1.72W/o C T J, T STG Operating and Storage Temperature Range-55 to +150o CT LMaximum Lead Temperature for Soldering Purpose,1/8” from Case for 5 Seconds300o CSymbol Parameter FCI25N60N_F102Units RθJC Thermal Resistance, Junction to Case 0.58o C/W RθCS Thermal Resistance, Case to Heat Sink (Typical)0.5RθJA Thermal Resistance, Junction to Ambient 62.5*Drain current limited by maximum junction temperatureFCI25N60N_F102 N-Channel MOSFETPackage Marking and Ordering Information T C = 25o C unless otherwise notedElectrical CharacteristicsOff CharacteristicsOn CharacteristicsDynamic CharacteristicsSwitching CharacteristicsDrain-Source Diode CharacteristicsDevice Marking DevicePackage Reel SizeTape WidthQuantity FCI25N60NFCI25N60N_F102I2PAK--50SymbolParameterTest ConditionsMin.Typ.Max.UnitsBV DSS Drain to Source Breakdown Voltage I D = 1mA, V GS = 0V,T J = 25o C 600--V ΔBV DSS ΔT J Breakdown Voltage Temperature CoefficientI D = 1mA, Referenced to 25o C -0.74-V/o C I DSS Zero Gate Voltage Drain Current V DS = 480V, V GS = 0V--10μA V DS = 480V, T J = 125o C --100I GSSGate to Body Leakage CurrentV GS = ±30V, V DS = 0V --±100nAV GS(th)Gate Threshold VoltageV GS = V DS , I D = 250μA 2.0- 4.0V R DS(on)Static Drain to Source On Resistance V GS = 10V, I D = 12.5A - 0.1070.125Ωg FSForward TransconductanceV DS = 20V, I D = 12.5A--SC iss Input Capacitance V DS = 100V, V GS = 0V f = 1MHz-25203352pF C oss Output Capacitance-103137pF C rss Reverse Transfer Capacitance - 3.25pF C oss Output CapacitanceV DS = 380V, V GS = 0V, f = 1MHz -55-pF C oss eff.Effective Output Capacitance V DS = 0V to 480V, V GS = 0V-262-pF Q g(tot)Total Gate Charge at 10V V DS = 380V, I D = 12.5A, V GS = 10V(Note 4)-5774nC Q gs Gate to Source Gate Charge -10-nC Q gd Gate to Drain “Miller” Charge -18-nC ESREquivalent Series Resistance (G-S)Drain Open, f=1MHz-1-Ωt d(on)Turn-On Delay Time V DD = 380V, I D = 12.5A R G = 4.7Ω(Note 4)-2152ns t r Turn-On Rise Time -2254ns t d(off)Turn-Off Delay Time -68146ns t fTurn-Off Fall Time-520nsI S Maximum Continuous Drain to Source Diode Forward Current --25A I SM Maximum Pulsed Drain to Source Diode Forward Current --75A V SD Drain to Source Diode Forward Voltage V GS = 0V, I SD = 12.5A - - 1.2V t rr Reverse Recovery Time V GS = 0V, I SD = 12.5AdI F /dt = 100A/μs-370-ns Q rrReverse Recovery Charge-7- μCNotes:1. Repetitive Rating: Pulse width limited by maximum junction temperature2. I AS = 8.3A, R G = 25Ω, Starting T J = 25°C3. I SD ≤ 25A, di/dt ≤ 200A/μs, V DD ≤ 380V, Starting T J = 25°C4. Essentially Independent of Operating Temperature Typical CharacteristicsResistive Switching Test Circuit & WaveformsUnclamped Inductive Switching Test Circuit & WaveformsFCI25N60N_F102 N-Channel MOSFET Mechanical DimensionsTO-262-3LDimensions in MillimetersFCI25N60N_F102 N-Channel MOSFET*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used here in:1. Life support devices or systems are devices or systems which, (a) areintended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.2.A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsAuto-SPM™Build it Now™CorePLUS™CorePOWER™CROSSVOLT ™CTL™Current Transfer Logic™DEUXPEED ®Dual Cool™EcoSPARK ®EfficentMax™ESBC™Fairchild ®Fairchild Semiconductor ®FACT Quiet Series™FACT ®FAST ®FastvCore™FETBench™FlashWriter ® *FPS™FRFET ®Global Power Resource SM Green FPS™Green FPS™ e-Series™G max ™GTO™IntelliMAX™ISOPLANAR™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™Motion-SPM™OptiHiT™OPTOLOGIC ®OPTOPLANAR ®®PDP SPM™PowerTrench ®PowerXS™Programmable Active Droop™QFET ®QS™Quiet Series™RapidConfigure™Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™SPM ®STEALTH™SuperFET™SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS™SyncFET™Sync-Lock™ ®*The Power Franchise ®®TinyBoost™TinyBuck™TinyCalc™TinyLogic ®TINYOPTO™TinyPower™TinyPWM™TinyWire™TriFault Detect™TRUECURRENT™*μSerDes™UHC ®Ultra FRFET™UniFET™VCX™VisualMax™XS™®Datasheet IdentificationProduct StatusDefinitionDatasheet contains the design specifications for product development. Specifications ANTI-COUNTERFEITING POLICYFairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, , under Sales Support .Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.™。
TL210 四单元线性阵列扬声器系统 UM-TL210-20190925 说明书
感谢您购买 产品！请仔细阅读本手册，它将帮助你妥善设置并运行您的系统，使其发挥卓越的性能。
并保留这些说明以供日后参照。
警告：为了降低火灾与电击的风险，请不要将产品暴露在雨中或潮湿环境中。
警告：为了降低电击的风险，非专业人士请勿擅自拆卸该系统。
仅供专业人士操作。
等边三角形中的闪电标记，用以警示用户该部件为非绝缘体，系统内部存在着电压危险，电压。
可能足以引起触电。
可能足以引起触电如系统标有带惊叹号的等边三角形，则是为提示用户严格遵守本用户指南中的操作与维护规定。
注意：请勿对系统或附件作擅自的改装。
未经授权擅自改装将造成安全隐患。
警告：燃不得将明火源(如点的蜡烛)放在器材上面。
1. 请先阅读本说明。
2. 保留这些说明以供日后参照。
3. 注意所有警告信息。
4. 遵守各项操作指示。
5. 不要在雨水中或潮湿环境中使用本产品。
6. 不要将产品靠近热源安装，例如暖气管、加热器、火炉或其它能产生热量的装置（包括功放机 ）。
7. 不要破坏极性或接地插头的安全性设置。
如果提供的插头不能插入插座，则应当请专业人员更换插座。
8. 保护好电源线和信号线，不要在上面踩踏或拧在一起（尤其是插头插座及穿出机体以外的部分 ）。
9. 使用厂商规定及符合当地安全标准的附件。
10.雷电或长时间不使用时请断电以防止损坏产品。
12. 不要让物体或液体落入产品内——它们可能引起火灾或触电。
13. 请注意产品外罩上的相关安全标志。
. 仅与厂商指定或与电器一同售出的推车、架子、三脚架、支架或桌子一起使用。
推动小车/电器时，应谨防翻倒。
11注意事项产品的安装调试须由专业人士操作。
在使用非本厂规定的吊装件时，要保证结构的强度并符合当地的安全规范。
警告：1扬声器及扬声器系统的产品有限保修期为自正式购买日起的3年。
由于用户不合理的应用而导致音圈烧毁或纸盆损坏等故障，不包含于产品保修项目。
产品吊附件(包括音箱装配五金件和吊挂配件)的有限保修期为自正式购买日起的1年。
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IRFI5210
PRELIMINARY
HEXFET ® Power MOSFET
PD - 9.1404A
l Advanced Process Technology l Isolated Package
l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage Dist. = 4.8mm l P-Channel
l
Fully Avalanche Rated
Parameter
Typ.
Max.
Units
R θJC Junction-to-Case ––– 2.4R θJA
Junction-to-Ambient
–––
65
Thermal Resistance
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications.The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
3/16/98
Description
Parameter
Max.
Units
I D @ T C = 25°C Continuous Drain Current, V GS @ -10V -23I D @ T C = 100°C Continuous Drain Current, V GS @ -10V -16A I DM
Pulsed Drain Current -140P D @T C = 25°C Power Dissipation 63W Linear Derating Factor 0.42W/°C V GS Gate-to-Source Voltage
± 20V E AS Single Pulse Avalanche Energy 690mJ I AR Avalanche Current
-21A E AR Repetitive Avalanche Energy 6.3mJ dv/dt Peak Diode Recovery dv/dt -5.0V/ns T J Operating Junction and
-55 to + 175T STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )°C
Mounting torque, 6-32 or M3 srew
10 lbf•in (1.1N•m)
Absolute Maximum Ratings
°C/W
IRFI5210
IRFI5210
IRFI5210
IRFI5210
IRFI5210
IRFI5210
IRFI5210。