2SA1937中文资料

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TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
IB1 2 kΩ
tstg
IB2 IB2

2.3

μs
VCC = −200 V
Fall time
tf
IB1 = −10 mA, IB2 = 20 mA,
DUTY CYCLE ≤ 1%

0.2

Marking
A1937
Part No. (or abbreviation code)
Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
2
2006-11-09
Collector current IC (mA)
−500 −400 −300
IC – VCE
−100 −80 −60 −40
−20 −10 −5 −2
−1
−0.5 −200
−100
0 0
IB = −0.2 mA
Common emitter Tc = 25°C
−4
−8
−12
−16
Collector-emitter saturation voltage VCE (sat) (V)
VCE (sat) – IC
−30 Common emitter
−10 IC/IB = 10
−5 −3
−1 −0.5 −0.3
−0.1 −0.05
−1
Tc = 100°C
−55
25
−3 −10 −30 −100 −300 −1000 −3000
• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1937
High-Voltage Switching Applications
2SA1937
Unit: mm
• High voltage: VCEO = −600 V
Absolute Maximum Ratings (Ta = 25°C)
−1000
Collector current IC (mA)
−500 Common emitter VCE = −5 V
−400
IC – VBE
−300
−200 −100
Tc = 100°C 25
−55
0
0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2
Base-emitter voltage VBE (V)
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-09
Collector current IC (mA)
Base-emitter saturation voltage VBE (sat) (V)
VBE (sat) – IC
−10
Common emitter
−5
IC/IB = 10
−3
−1 −0.5 −0.3
25
−55
Tc = 100°C
−0.1 −1
−3
2SA1937
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
−20
Collector-emitter voltage VCE (V)
DC current gain hFE
2SA1937
1000 300 100
hFE – IC
Tc = 100°C
25 −55
30
10 Common emitter
VCE = −5 V
3
−1
−3
−10
−30
−100 −300
Collector current IC (mA)
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Symbol
Test Condition
ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat)
Base current
IB
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
−0.5 A
−1
−0.25
A
1 W
10
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
Min Typ. Max Unit

― −10 μA


−1
μA
−600 ―

V
100

500
80

450


−1.0
V
― −0.76 −0.9
V

35
― MHz

24

pF
Turn-on time Switching time Storage time
ton
OUTPUT ―
0.2

20 μs INPUT IB1
fT Cob
VCB = −600 V, IE = 0 VEB = −7 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −20 mA VCE = −5 V, IC = −100 mA IC = −100 mA, IB = −10 mA IC = −100 mA, IB = −10 mA VCE = −5 V, IC = −50 mA VCB = −10 V, IE = 0, f = 1 MHz

Note: Using continuously under heavy loads (e.g. the applirrent/voltage and the significant change in
JEITA

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−600
V
Collector-emitter voltage
VCEO
−600
V
Emitter-base voltage
VEBO
−7
V
DC
IC
Collector current
Pulse
ICP
Collector current IC (mA)
−3000
Safe Operating Area
IC max (pulsed)* −1000
IC max (continuous) −500
−300
−100
−50 −30
DC operation Tc = 25°C
100 ms*
10 μs* 100 μs* 300 μs* 1 ms* 10 ms*
−10
−30
−100 −300
Collector current IC (mA)
−1000
3
2006-11-09
2SA1937
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.
−10 *: Single nonrepetitive pulse
−5 Tc = 25°C
−3 Curves must be derated linearly
with increase in temperature.
−1
−1
−3
−10 −30 −100
−300
VCEO max
−1000 −3000
Collector-emitter voltage VCE (V)
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