MJD122TF;中文规格书,Datasheet资料

合集下载

IP1203PBF,IP1203TRPBF,IP1203PBF,IP1203TRPBF, 规格书,Datasheet 资料

IP1203PBF,IP1203TRPBF,IP1203PBF,IP1203TRPBF, 规格书,Datasheet 资料

iP1203PbF Power BlockDescriptionThe iP1203PbF is a fully optimized solution for medium current synchronous buck applications requiring up to 15A. It includes full function PWM control, with optimized power semiconductor chipsets and associated passives, achieving high power density. Very few external components are required to create a complete synchronous buck power supply.iPOWIR ™ technology offers designers an innovative space-saving solution for applications requiring high power densities. iPOWIR technology eases design for applications where component integration offers benefits in performance and functionality. iPOWIR technology solutions are also optimized internally for layout, heat transfer and component selection.• 5.5V to 13.2V Input Voltage •0.8V to 8V Output Voltage • 15A Maximum Load Capability•200-400kHz Nominal Switching Frequency •Over Current Hiccup•External Synchronization Capable •Overvoltage Protection•Over Temperature Protection•Internal Features Minimize Layout Sensitivity •Very Small Outline 9mm x 9mm x 2.3mmFeaturesSingle Output Full Function Synchronous Buck Power BlockIntegrated Power Semiconductors,PWM Control & PassivesiP1203PbFPD- 97108iP1203PbFAbsolute Maximum RatingsRecommended Operating ConditionsElectrical Specifications @ V IN = 12VAll specifications @ 25°C (unless otherwise specified)iP1203PbF Electrical Specifications (continued)iP1203PbF ArrayFig. 1:iP1203PbF Internal Block DiagramiP1203PbFFig. 2: Power Loss vs. Current0102030405060708090100110120130Case Temperature (°C)102030405060708090100110120130PCB Temperature (°C)0246810121416O u t p u t C u r r e n t (A )Tx51015Output Current (A)0123456P o w e r L o s s (W )iP1203PbFFig. 6: Normalized Power Loss vs. FrequencyFig. 4: Normalized Power Loss vs. V INFig. 5: Normalized Power Loss vs. V OUTTypical Performance CurvesFig. 7: Normalized Power Loss vs. Inductance0.40.81.21.62.0 2.4Output Inductance (µH)0.961.001.041.081.121.161.201.24P o w e r L o s s (N o r m a l i z e d )-1.00.01.02.03.04.05.06.0SOA Temp Adju stment (°C)Fig. 8: Nominal Overcurrent Threshold Setting200250300350400Swiching Frequency (kHz)0.9601.0001.0401.0801.120P o w e r L o s s (N o r m a l i z e d )-0.50.00.51.01.5SOA Temp Adju stment (°C)681012141618202224Overload Current (A)525456585105125145165185205ROC-SET (kO hms) for 5.5Vin510152025303540455055R O C -S E T (k O h m s ) f o r 12V i n20253035404550R T (kOhms)200220240260280300320340360380400S w i t c h i n g F r e q u e n c y (k H z )0.81.62.43.24.04.85.66.47.28.0Output Voltage (V)0.920.961.001.041.081.121.161.201.241.281.321.36P o w e r L o s s (N o r m a l i z e d )-2-1012345678910SOA Temp Adjustment (°C)567891011121314Input Voltage (V)0.960.981.001.021.041.06P o w e r L o s s (N o r m a l i z e d )-1.0-0.50.00.51.01.5SOA Temp Adjustment (°C)iP1203PbFAdjusting the Power Loss and SOA Curves for Different Operating ConditionsTo make adjustments to the power loss curves in Fig. 2, multiply the normalized value obtained from the curves in Figs. 4,5, 6 or 7 by the value indicated on the power loss curve in Fig. 2. Then if multiple adjustments are required, multiply all of the normalized values together, then multiply that product by the value indicated on the power loss curve in Fig. 2. The resulting product is the final power loss based on all factors. See example no. 1.To make adjustments to the SOA curve in Fig. 3, determine your maximum PCB Temp & Case Temp at the maximum operating current of each iP1203PbF . Then, add the correction temperature from the normalized curves in Figs. 4, 5, 6 or 7 to the T X axis intercept (see procedure no. 2 above) in Fig. 3. When multiple adjustments are required, add all of the temperatures together, then add the sum to the T X axis intercept in Fig. 3. See example no. 2.Operating Conditions for the following examples:Output Current = 12A Input Voltage = 13.2V Inductor = 0.6µHOutput Voltage = 1.2VSw Freq= 400kHzExample 1) Adjusting for Maximum Power Loss:(Fig. 2)Maximum power loss = 4.1W(Fig. 4)Normalized power loss for input voltage ≈ 1.025(Fig. 5)Normalized power loss for output voltage ≈ 0.97(Fig. 6)Normalized power loss for frequency ≈ 1.08(Fig. 7)Normalized power loss for inductor value ≈ 1.08Adjusted Power Loss = 4.1 x 1.025 x 0.97 x 1.08 x 1.08 ≈ 4.75WApplying the Safe Operating Area (SOA) CurveThe SOA graph incorporates power loss and thermal resistance information in a way that allows one to solve for maximum current capability in a simplified graphical manner. It incorporates the ability to solve thermal problems where heat is drawn out through the printed circuit board and the top of the case.Procedure1)Draw a line from Case Temp axis at T CASE to the PCBTemp axis at T PCB .2)Draw a vertical line from the T X axis intercept to the SOAcurve. (see AN-1047 for further explanation of T X )3)Draw a horizontal line from the intersection of the verticalline with the SOA curve to the Y axis. The point at which the horizontal line meets the y-axis is the SOA current.4)If no top sided heatsinking is available, assume T CASEtemperature of 125°C for worst case performance.120102030405060708090100110102030405060708090100110120PCB Temperature (ºC)O u t p u t C u r r e n t (A )Case Temperature (ºC)iP1203PbFExample 2) Adjusting for SOA Temperature:Assuming T CASE = 110°C & T PCB = 90°C for both outputsOutput1(Fig. 4)Normalized SOA Temperature for input voltage ≈ +0.7°C(Fig. 5)Normalized SOA Temperature for output voltage ≈ -0.75°C (Fig. 6)Normalized SOA Temperature for frequency ≈ +1.0°C (Fig. 7)Normalized SOA Temperature for inductor value ≈ +2.0°CT X axis intercept temp adjustment = +0.5°C - 0.75°C + 1.0°C +2.0°C ≈ +2.75°CThe following example shows how the SOA current is adjusted for a T X change of +2.75°C and output is in SOAFig. 10: Power Loss Test Circuit120102030405060708090100110102030405060708090100110120PCB Temperature (ºC)O u t p u t C u r r e n t (A )Case Temperature (ºC)TXFig. 11: Recommended PCB Footprint (Top View)iP1203PbFThe operating switching frequency (f SW ) range of iP1203PbF is 200 kHz to 400 kHz. The desired fre-quency is set by placing an external resistor to the R T pin of the iP1203PbF . See Fig. 9 for the proper resistor value.The iP1203PbF is capable of accepting an external digital synchronization signal. Synchronization will be enabled by the rising edge clock. The free run-ning oscillator frequency is twice the switching fre-quency. During synchronization, R T is selected such that the free running frequency is 20% below the synchronization frequency. The maximum synchro-nization frequency that iP1203PbF can accept is 800kHz. Note that the actual switching frequency is half the synchronization frequency.iP1203PbF User s Design GuidelinesThe iP1203PbF is a single output 15A power block consisting of optimized power semiconductors, PWM control and its associated passive components. It is based on a synchronous buck topology and offers an optimized solution where space, efficiency and noise caused by parasitics are of concern. The power block operates with fixed frequency voltage mode control. The iP1203PbF components are integrated in a land grid array (LGA) package.V IN / Enabling the OutputThe input operating voltage range of the iP1203PbF is 5.5V to 13.2V.The iP1203PbF output is turned on upon application of input voltage. The V IN slew rate should not exceed 50mV/µs. The converter can also be turned on and off by releasing or pulling the SS pin low through a logic level MOSFET, the drain of which connects to the soft start pin (see Fig.12). This feature can be useful if sequencing or different start-up timing of dif-ferent system outputs are required. In situations where the output has undergone a latched shutdown due to overvoltage, cycling Vin will reset the output. Cycling soft start pin will not unlatch the output.Soft StartThe Soft Start function provides a controlled rise of the output voltage, thus limiting the inrush current.The soft start function has an internal 25µA +/-20%current source that charges the external soft start capacitor C ss up to 3V. During power-up, the output voltage starts ramping up only after the charging volt-age across the C ss capacitor has reached a 0.8Vtyp threshold, as shown in Fig. 13.Fig. 13: Power Up Threshold3V0.8VtypV Css V OUTFig.12: Soft Start/Enable CircuitFrequency and SynchronizationOvercurrent Protection HICCUPThe overcurrent protection function of the iP1203PbF offers a hiccup feature. During overloads, when the overcurrent trip threshold is reached, the power sup-ply output shuts down and attempts to restart (out-put HICCUP mode). The time duration between the shutdown of the output and the restart is determined by the time it takes to discharge the soft start ca-pacitor. Typically, the discharge time of the soft start capacitor is 10 times the charge time. The duty cycle of the hiccup process is typically 5%. The output will stay in hiccup indefinitely until the overload is re-moved. The typical overcurrent trip threshold of the device is internally set at 30A. The overcurrent shut-down / HICCUP threshold is about ±30% accurate.The iP1203PbF overcurrent shutdown and HICCUP threshold can be set externally by adding R OCSET re-sistor from OCSET pin. Refer to Fig.8 for R OCSET se-lection.Overvoltage Protection (OVP)Overvoltage is sensed through output voltage sense pin FB s . The OVP threshold is set to 115% of the output voltage. Upon overvoltage condition, the OVP forces a latched shutdown. In this mode, the upper FET turns off and the lower FET turns on, thus crowbaring the output. Reset is performed by recy-cling the input voltage. Overvoltage can be sensed by either connecting FB s to its corresponding output through a separate output voltage divider resistor network, or it can be connected directly to its corre-sponding feedback pin FB. For Type III control loop compensation, FB s should be connected through voltage dividers only.Refer to the iP1203PbF Design Procedure section on how to set the OVP trip threshold.PGOODThis is an output voltage status signal that is open collector and is pulled low when the output voltage falls below 85% of the output voltage. High state in-dicates that outputs are in regulation. The PGOOD pin can be left floating if not used.Thermal ShutdownThe iP1203PbF provides thermal shutdown. The threshold typically is set to 140°C. When the trip threshold is exceeded, thermal shutdown turns the output off. Thermal shutdown is not latched and au-tomatic restart is initiated when the sensed tempera-ture drops to the normal range.Only a few external components are required to com-plete a dual output synchronous buck power supply using iP1203PbF. The following procedure will guide the designer through the design and selection pro-cess of these external components.A typical application for the iP1203 is:V IN = 12V, V OUT = 1.5V, I OUT = 15A, f sw = 300kHz, V p-p == 50mVSetting the Output VoltageThe output voltage of the iP1203PbF is set by the 0.8V reference Vand external voltage dividers.Fig. 14: Typical Scheme for Output Voltage Setting V OUT is set according to equation (1):V OUT = V REF x (1 + R 2 /R 5 ) (see Fig. 14)(1)Setting R 2 to 1K, V OUT to 1.5V and V REF to 0.8V, will result in R 5= 1.14 Kohms. Final values can be se-lected according to the desired accuracy of the out-put.To set the output voltage for Type III compensation,refer to equation (24) in Type III compensation sec-tion.iP1203PbF Design ProcedureSetting the Overvoltage TripThe output of the iP1203 will shut down if it experi-ences a voltage in the range of 115% of V OUT . The overvoltage sense pin FB s is connected to the out-put through voltage dividers, R26 and R27 (Fig. 14),and the trip setpoint is programmed according to equation (1). A separate overvoltage sense pin FB s is provided to protect the power supply output if for some reason the main feedback loop is lost (for in-stance, loss of feedback resistors). An optional 100pF capacitor (C14) is used for delay and filtering.If this redundancy is not required and if a Type II con-trol loop compensation scheme is utilized, FB s pin can be connected to FB.Selecting the Soft-Start CapacitorThe soft start capacitor C ss is selected according to equation (2):t ss = 40 x C ss(2)where,t ss is the output voltage ramp time in milliseconds,and C ss is the soft start capacitor in µF.A 0.1µF capacitor will provide an output voltage ramp-up time of about 4ms.Input Capacitor SelectionThe switching currents impose RMS current require-ments on the input capacitors. Equation (3) allows the selection of the input capacitors.where, I out is the output current, and D is the duty cycle and is expressed as:D = V OUT / V IN .For the above example D= 0.13 and, using equation (3) the capacitor rms current yields 5.0A.For Type II compensation,(3))1(D D I I out RMS −=For better efficiency and low input ripple, select low ESR ceramic capacitors. The amount of the capaci-tors is determined based on the rms rating. In the above example, a total of 3 x 22µF, 2A capacitors will be required to support the input rms current.Output Capacitor C O SelectionSelection of the output capacitors depends on two factors:a. Low effective ESR for ripple and load transient re-quirementsTo support the load transients and to stay within a specified voltage dip ∆V due to the transients, ESR selection should satisfy equation (4):R ESR ≤ ∆V / I Loadmax(4)Where,I Loadmax is the maximum load current.If output voltage ripple is required to be maintained at specified levels then the expression in equation (5) should be used to select the output capacitors.R ESR ≤ V p-p / I ripple(5)Where,V p-p is the peak to peak output ripple voltage .I ripple is the inductor peak-to peak ripple current.In addition, the voltage ripple caused by the output capacitor needs to be significantly smaller than the ripple caused by the ESR of the capacitor. Use equa-tion (6) to satisfy this requirement.If the inductor current ripple I ripple is 30% of I OUT1, the 50mV peak to peak output voltage ripple requirement will be met if the total ESR of the output capacitors is less than 11m Ω. This will require 2 x 470µF POSCAP capacitors. Additional ceramic capacitors can be added in parallel to further reduce the ESR. Care should be given to properly compensate the control loop for low output capacitor ESR values.When selecting output capacitors, it is important to consider the overshoot performance of the power sup-ply. If the amount of capacitance is not adequate, then,when unloading the output, the magnitude of the over-shoot due to stored inductor energy, and depending on the speed of the response of the control loop, can exceed the overvoltage trip threshold of the iP1203PbF and can cause undesirable shutdown of the output. The magnitude of the overshoot should be kept below 1.125V OUT . To prevent the overshoot from tripping the output a delay can be added by in-stalling capacitor C14 as shown in Fig.14.b. StabilityThe value of the output capacitor ESR zero frequency f esr plays a major role in determining stability. f esr is calculated by the expression in equation (7).f ESR = 1 / (2 π x R ESR x C O )(7)Details on how to consider this parameter to design for stability are outlined in the control loop compen-sation section of this datasheet.Inductor L O SelectionInductor selection is based on trade-offs between size and efficiency. Low inductor values result in smaller sizes, but can cause large ripple currents and lower efficiency. Low inductor values also benefit the tran-sient performance.The inductor L o is selected according to equation (8):L O = V out x (1 - D) / (f sw x I ripple )(8)For the above example, and for I ripple of 30% of I OUT , L O is calculated to be 1.0µH.The core must be selected according to the peak of maximum output current.(6)ESRs o R f C ××>π210Control Loop CompensationThe iP1203PbF feedback control is based on single loop voltage mode control principle.The goal in the design of the compensator is to achieve the highest unity gain (0 db) crossover fre-quency with sufficient phase margin for the closed loop transfer function. The LC filter of the power sup-ply introduces a double pole with 40db/dec slope and 180° phase lag. The 180° phase contribution from the LC filter is the source of instabilty.The resonant frequency of the LC filter is expressed by equation (9):(9)The error amplifier of the iP1203PbF PWM controlleris transconductance amplifier, and its output is avail-able for external compensation.Two types of compensators are studied in this sec-tion. The first one is called Type II and it is used to compensate systems the ESR frequency f esr (equa-tion 7) of which is in the midfrequency range and Type III that can be used for any type of output capacitors and have a wide range of f esr .For output voltage settings less than 1.0V that use low ESR ceramic capacitors, it is recommended that the unity gain crossover frequency be set around 20kHz to maintain stable operation.where, g m is the transconductance of the error am-plifier.(12)Follow the steps below to determine the feedback loop compensation component values:1. Select a zero db crossover frequency f 0 in the range of 10% to 20% of the switching frequency f sw.)(2 / 1 00C L f LC ×=πType IIFrom Fig.15 the transfer function H(s) of the error amplifier is given by (10):(10)The term s represents the frequency dependence ofthe transfer function.The Type II controller introduces a gain and a zero expressed by equations (11) and (12):9199192551)(C sR C sR R R R g s H m +×+×=91921C R f z ××=πFig. 15: Typical Type II Compensation and its Gain Plot(11)19255)(R R R R g s H m ×+×=3. Place a zero at 75% of f LC to cancel one of the LC filter poles.oo z C L f ××=π2175.04. Calculate C 9 using equations (12) and (14)Calculation of the compensation components based on the example above, yields:f LC = 5.0kHz f z = 3.8kHzf 0 = 45kHz (15% of 300kHz)f esr = 14kHz, per equation (7) using R esr = 12m Ω.R 19 = 2.49K C 9 = 18nFSometimes, a pole f p2 is added at half the switching frequency to filter the switching noise. This is done by adding a capacitor C opt in Fig.15 from the output of the error amplifier (CC pin of iP1203PbF) to ground.This pole is given by equation (15):C opt is found from equation (16) by rearranging the terms in equation (15) and by setting f p2 = f sw / 2:(16)Fig. 16: Typical Type III Compensation and its Gain PlotType IIIThe Type III compensation scheme allows the use of any type of capacitors with ESR frequency of any range. This scheme suggests a double pole double zero compensation and requires more components around the error amplifier to achieve the desired gain and phase margins. Fig. 13 represents the Type III compensation network for iP1203PbF.The transfer function of the Type III compensator is given by equation (17)2. Calculate R 5 using equation (13):Where,V IN = Maximum input voltagef 0 = Error amplifier zero crossover frequency f esr = Output capacitor C o zero frequency f LC = Output frequency resonant filterg m = Error amplifier transconductance. Use 2mS for g m .V ramp = Oscillator ramp voltage. Use 1.25V for V ramp(14)(13)(15)optp C R f ××=19221π19221R f C p opt ××=π)1()1()1()1(1)(8217208292092C sR C sR C sR C sR C sR s H +×++×+×=(17)mLC esr in ramp g R R R f f f V V R 115252019×+××××=R 210Vref V o- VrefMore than one iteration may be required to calculate the values of the compensation components if cross-over frequencies higher than the range specified in step 1 are required (for higher bandwidths and faster transient response performance). To ensure stability a phase margin greater than 45° should be achieved.Refer to AN-1043 for more detailed compensation techniques using Transconductance Amplifiers.7. Place the second pole f p2 at or near f esr of the out-put capacitor C o and determine the value of R 21 fromequation (19). Make sure R 21 <8. Use equation (24) to calculate R 5.R 5 = R 2 x (24)The crossover frequency f 0 for Type III compensa-tion is represented by equation (23):Follow the steps below to determine the feedback loop compensation component values:1. Select a zero db crossover frequency f 0 in the range of 10% to 20% of the switching frequency f sw.2. Select R 20~ 10k Ω3. Place the first zero f z1 at 75% of the resonant fre-quency f LC of the output filter.Determine C 9 from equation (21).4. Place a third pole f P3 at or near the switching fre-quency f SW .Select C7 such that C 7 <5. Calculate C 8 from equation (23).6. Place the second zero at 125% of the resonant frequency f LC of the output filter. Calculate R 2 using equation (22).109C The frequencies of the three poles and the two zeros of the Type III compensation scheme are represented by the following equations:f p1= 0(18)(19)(21)(20)821221C R f p ××=π720321C R f p ××=π920121C R f z ××=π82221C R f z ××=π008200211C L C R V V f IN ramp××××××=π(22)(23)Typical WaveformsCh1: Switching node, 400kHzCh2: 800kHz external synchronizationFig. 17: iP1203PbF Outputs Synchronized to800kHz Ch1: Output voltage, 500mV/divCh3: Output current, 10A/divFig. 18: iP1203PbF Output Hiccup, Due to Over-loadCh1: Output voltage, 100mV/div acCh3: Load current, 5A/divFig. 19: iP1203PbF Transient Response Load Step 1A to 12A Ch1: Output voltage, 100mV/div acCh3: Load current, 5A/divFig. 20: iP1203PbF Transient Response Load Step12A to 0ACh1: FB s input, 200mV/divCh2: Output voltage, 1V/divFig. 21: iP1203PbF Overvoltage Trip. Output Voltage Turns Off When Voltage at FB s Pin Exceeds 15% of FB (0.8V)For stable and noise free operation of the whole power system, it is recommended that the design-ers use the following guidelines:1. Follow the layout scheme presented in Fig. 23. Make sure that the output inductor L is placed as close to iP1203PbF as possible to prevent noise propagation that can be caused by switching of power at the switching node Vsw, to sensitive cir-cuits.2. Provide a mid-layer solid ground plane with con-nections to the top layer through vias. The PGND pads of iP1203PbF also need to be connected to the same ground plane through vias.3. To increase power supply noise immunity, place input and output capacitors close to one another, as shown in the layout diagram. This will provide short high current paths that are essential at the ground terminals.4. Although there is a certain degree of VIN bypass-ing inside the iP1203PbF, the external input decoupling capacitors should be as close to the device as pos-sible.5. The feedback track from the output VOUTto FB should be routed as far away from noise generating traces as possible.6. The compensation components and the Vref by-pass capacitor should be placed as close as pos-sible to their corresponding iP1203PbF pins, away from noise generating traces.7. Refer to IR application note AN-1029 (Optimizinga PCB Layout for an iPOWIR Technology Design) to determine what size vias and copper weight and thickness to use when designing the PCB.8. Place the overcurrent threshold setting resistors ROCSETclose to the iP1203PbF block at the corre-sponding connection node.Layout GuidelinesFig. 24: Typical Application Schematic 21This paper describes how to optimize the PCB layout design for both thermal and electrical performance. This includes placement, routing, and via interconnect suggestions.AN-1030: Applying iPOWIR Products in Your Thermal EnvironmentThis paper explains how to use the Power Loss vs Current and SOA curves in the data sheet to validate if the operating conditions and thermal environment are within the Safe Operating Area of the iPOWIR product.AN-1043: Stabilize the Buck Converter with Transconductance AmplifierThis paper explains how to stabilize a buck converter for Type II and Type III control loop compensation using transconductance amplifiers.AN-1047: Graphical solution to two branch heatsinking Safe Operating AreaThis paper is a suppliment to AN-1030 and explains how to use the double side Power Loss vs Current and SOA curves in the data sheet to validate if the operating conditions and thermal environment are within the Safe Operating Area of the iPOWIR product.AN-1028: Recommended Design, Integration and Rework Guidelines for International Rectifier s iPOWIR Technology BGA and LGA PackagesThis paper discusses optimization of the layout design for mounting iPOWIR BGA and LGA packages on printed circuit boards, accounting for thermal and electrical performance and assembly considerations.Topics discussed includes PCB layout placement, routing, and via interconnect suggestions, as well as soldering, pick and place, reflow, cleaning and reworking recommendations.芯天下--/22iP1203PbFFig. 27: Part Marking芯天下--/ 23This product has been designed and qualified for the industrial market.IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903Visit us at for sales contact information .Data and specifications subject to change without notice.8/06Fig.28: Recommended Solder Profile and Stencil Design芯天下--/。

MMPQ2222A;FFB2222A;中文规格书,Datasheet资料

MMPQ2222A;FFB2222A;中文规格书,Datasheet资料

ON CHARACTERISTICS
hFE DC Current Gain IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V* IC = 150 mA, VCE = 1.0 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 35 50 75 100 50 40
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7 Xtf=3 Rb=10)
Thermal Characteristics
Symbol
PD RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die FFB2222A 300 2.4 415

MJD41CTF;中文规格书,Datasheet资料

MJD41CTF;中文规格书,Datasheet资料

MJD41CMJD41CDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can bereasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.A CEx™Bottomless™CoolFET™CROSSVOLT ™DenseTrench™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™LittleFET™MicroFET™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™SLIENT SWITCHER ®SMART START™STAR*POWER™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TruTranslation™TinyLogic™UHC™UltraFET ®VCX™STAR*POWER is used under license分销商库存信息: FAIRCHILDMJD41CTF。

MJD122

MJD122
COLLECTOR- EMITTER DIODE s SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) s ELECTRICAL SIMILAR TO TIP122 AND TIP127
APPLICATIONS s GENERAL PURPOSE SWITCHING AND
IB = 16 mA IB = 80 mA IB = 80 mA
VCE = 4 V VCE = 4 V VCE = 4 V
Min.
100
1000 100
Typ .
M a x. 10
Unit µA
10
µAபைடு நூலகம்
10
µA
500
µA
2
mA
V
2
V
4
V
4.5
V
2.8
V
12000
Safe Operating Area
AMPLIFIER.
DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pairs. They are manufactured using Epitaxial Base technology for cost-effective performance.
Freewheel Diode Forward Voltage (NPN type)
Freewheel Diode Forward Voltage (PNP type)
Switching Time Resistive Load (NPN type)
Switching Time resistive Load (PNP type)

MJ-SERIES PulSE METER 产品说明书

MJ-SERIES PulSE METER 产品说明书
MJR (cold water) and MJHR (hot water) meters use a reed switch. They provide a dry contact closure and do not require power.
MJT (cold water) and MJHT (hot water) meters do not have a sensor, and they totalize only.
Internals Engineered thermoplastic
Magnet Alnico
Accuracy
+/- 1.5% of reading
Pulse Output Sensor Max Current Max Voltage
MJE/MJHE Hall-ef fect
20 mA 24 Vdc
Inlet Strainer. Clean the strainer yearly, or as required, depending on water condition. Pull out the strainer or backflush the meter to loosen trapped particulates.
SPECIFICATIONS*
MJ-Series meters use the internationally-accepted multi-jet principle. A gear train drives the register totalizer dials. For pulse output, one of the pointers is replaced by a magnet arm, which is detected by an encapsulated sensor attached to the outside of the lens.

MJD122T4G;MJD122G;MJD127G;MJD127T4G;MJD122T4;中文规格书,Datasheet资料

MJD122T4G;MJD122G;MJD127G;MJD127T4G;MJD122T4;中文规格书,Datasheet资料

ORDERING INFORMATION
Device MJD122 MJD122G MJD122T4 MJD122T4G NJVMJD122T4G MJD127 MJD127G MJD127T4 MJD127T4G Package DPAK DPAK (Pb−Free) DPAK DPAK (Pb−Free) DPAK (Pb−Free) DPAK DPAK (Pb−Free) DPAK DPAK (Pb−Free) Shipping† 75 Units/Rail 75 Units/Rail 2,500/Tape & Reel 2,500/Tape & Reel 2,500/Tape & Reel 75 Units/Rail 75 Units/Rail 2,500/Tape & Reel 2,500/Tape & Reel
2
2 VBE(sat) @ IC/IB = 250 VBE @ VCE = 4 V 1 VCE(sat) @ IC/IB = 250 0.5 0.1
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
TIP120−TIP122 Series, and TIP125−TIP127 Series Monolithic Construction With Built−in Base−Emitter Shunt Resistors High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Pb−Free Packages are Available*

SS12SDP2;SS22SDP2;SS14MDP2;SS12SDH2;SS12SBP2;中文规格书,Datasheet资料

SS12SDP2;SS22SDP2;SS14MDP2;SS12SDH2;SS12SBP2;中文规格书,Datasheet资料

Series SSUltra-Miniature SlidesH44I n d i c a t o r sA c c e s s o r i e sS u p p l e m e n t T a c t i l e sK e y l o c k sR o t a r i e s P u s h b u t t o n sI l l u m i n a t e d P B P r o g r a m m a b l e R o c k e r sT o u c hT i l t T o g g l e sElectrical Capacity (Resistive Load)Power Level (silver): 0.1A @ 30V DCLogic Level (gold):0.4VA maximum @ 28V AC/DC maximum(Applicable Range 0.1mA ~ 0.1A @ 20mV ~ 28V)Note: Find additional explanation of operating range in Supplement section.Other RatingsContact Resistance: 20 milliohms maximum for power level; 40 milliohms maximum for logic level Insulation Resistance: 100 megohms minimum @ 500V DC Dielectric Strength: 500V AC minimum 1 minute minimum Mechanical Life: 10,000 operations minimum Electrical Life: 10,000 operations minimumContact Timing:SS12S & SS22S – Shorting (make-before-break); SS14M – Nonshorting (break-before-make)Total Travel: .079” (2.0mm)Materials & FinishesActuator: PolyamideUpper Case: Polyester for 3-On models; polyacetal for all other models Lower Case:Glass fiber reinforced polyester for 3-On models;glass fiber reinforced polybutylene terephthalate (thermoplastic) for other models Movable Contactor:Phosphor bronze with silver plating (code 2) orphosphor bronze with gold plating (code 4) Interior Base: Phenolic resin (thermoset)Terminals: Brass with silver plating over copper plating or brass with gold platingEnvironmental DataOperating Temp Range:–15°C through +60°C (+5°F through +140°F) Humidity: 90 ~ 95% humidity for 96 hours @ 40°C (104°F)Vibration:10 ~ 55Hz with peak-to-peak amplitude of 1.5mm traversing the frequency range & returning in 1 minute; 3 right angled directions for 2 hoursShock: 50G (490m/s 2) acceleration (tested in 6 right angled directions, with 5 shocks in each direction)PCB ProcessingSoldering:Wave Soldering: For non-supported through-hole, see Profile B in Supplement section. For supported through-hole, 5 seconds maximum @ 250°C maximum.Manual Solder: See Profile B in Supplement section.Cleaning: These devices are not process sealed. Hand clean locally using alcohol based solution.Standards & CertificationsThe SS series devices have not been tested for UL recognition and CSA certification. These switches are designed for use in a low-voltage, low-current circuit.When used as intended in a low-voltage, low-current circuit, the results do not producehazardous energy.General Specifications/Series SSUltra-Miniature Slides H45I n d i c a t o r sA c c e s s o r i e s S u p p l e m e n t T a c t i l e s Ke y l o c k s R o t a r i e s P u s h b u t t o n sI l l u m i n a t e d P B P r o g r a m m a b l e R o c k e r sT o u c h T i l t T o g g l e sTop or side actuation permits flexible board pact dimensions and low profile allow high density mounting and close stacking of PC boards.Crisp actuation positively indicates circuit status.Double molded thermoset base and thermo- plastic housing prevent loosening of terminals due to high soldering temperatures.Award-winning STC mechanism with benefitsunavailable in conventional mechanisms: smoother, positive detend actuation, increased contact stability, and unparalleled logic-level reliability. (Additional STC details in Terms and Acronyms in the Supplement section.)Insert molded terminals lock out flux, solvents, and other contaminants.Inch or metric terminal spacing for standard PC board grid (.100” x .100” or 2.0mm x 2.0mm).Actual SizeDistinctive Characteristics/Series SSUltra-Miniature SlidesH46I n d i c a t o r sA c c e s s o r i e sS u p p l e m e ntT a c t i l e sK e y l o c k sR o t a r i e s P u s h b u t t o n s I l l u m i n a t e d P BP r o g r a m m a b l e R o c k e r sT o u c hT i l t T o g g l e sTYPICAL SWITCH ORDERING EXAMPLESPDT ON-NONE-ON Circuit Terminals with .100” SpacingTop ActuatedSilver Contacts Rated 0.1A @ 30V DCDESCRIPTION FOR TYPICAL ORDERING EXAMPLESS12SDP2* 14M SP3T ON ON ON SS14M model has nonshorting contacts.22SDPDTONNONEONSS22S model has shorting contacts.See Poles & Circuits chart below.* 14M Circuit with silver contacts only./Series SSUltra-Miniature Slides H47I n d i c a t o r sA c c e s s o r i e sS u p p l e m e n t T a c t i l e s K e y l o c k sR o t a r i e sP u s h b u t t o nsI l l u m i n a t e d P BP r o g r a m m a b l e R o c k e rsT o u c h T il tT o g g l e sTERMINAL SPACINGCONTACT MATERIALS & RATINGSComplete explanation of operating range in Supplement section.2Gold over Silver/Phosphor Bronze Logic Level0.4VA max @ 28V AC/DC maxSilver over Phosphor Bronze Power Level 0.1A @ 30V DC4PSide ActuatedTop ActuatedHACTUATIONBInch .100” x .100” with Gray BaseMetric 2.0mm x 2.0mm with Black BaseDOn-None-On Single Pole Models On-None-On Double Pole Models 3-On ModelsOn-None-On Single Pole Models On-None-On Double Pole Models3-On Models.079.100.157/Series SSUltra-Miniature SlidesH48I n d i c a t o r sA c c e s s o r i e sS u p p l e m e n tT a c t i l e sK e y l o cksR o t a r i esP u s h b u t t o nsI l l u m i n a t e d P BP r o g ra m m ab l e R oc k e r sT o u c hT i l tT o g g le sTYPICAL SWITCH DIMENSIONSTop ActuatedSingle & Double PoleSide Actuated Single & Double PoleSS12SDP2SS12SDH23-On Circuit • Top Actuated Single PoleSS14MDP2SS14MDH2.079.0793-On Circuit • Side Actuated Single Pole/分销商库存信息:NKK-SWITCHSS12SDP2SS22SDP2SS14MDP2 SS12SDH2SS12SBP2SS22SDH2 SS22SBP2SS22SBH2SS14MDH2 SS14MBP2SS12SBH4SS22SDH4 SS12SBH2SS12SBP4SS12SDH4 SS12SDP4SS22SBP4。

QEC122,QEC123, 规格书,Datasheet 资料

QEC122,QEC123, 规格书,Datasheet 资料

QEC121, QEC122, QEC123 — Plastic Infrared Light Emitting Diode
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Figure 7. Radiation Diagram
100° 90° 80°
110°
70°
120°
60°
130°
50°
140°
40°
150°
30°
160°
20°
170°
10°
180°

1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0
IC (ON) – NORMALIZED COLLECTOR CURRENT
QEC121, QEC122, QEC123 Rev. 1.0.1

MJ1214;MJ1213;MJ1211;MJ1222;MJ1225;中文规格书,Datasheet资料

MJ1214;MJ1213;MJ1211;MJ1222;MJ1225;中文规格书,Datasheet资料

.012" ± .006" (0.30 ±0.15 mm) 160 grams ±50 grams (.35 lbs.) -20°C to +70°C -30°C to +80°C for 96 hours 30G (peak value) for 11 millisec. per Method 213B, MIL-STD-202F (3 times each on 6 sides). 10-55-10 Hz. for 1 minute in X, Y and Z planes per Method 201A, MIL-STD-202F (2 hours in each direction).
SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE.
MJTP SERIES - 12 MM SQUARE TACT SWITCHES
MJTP1212
MJTP1212A
MJTP1212B
MJTP1212C
FEATURES
SPST momentary action. Excellent tactile feed-back (Snap dome). Long operating life for high reliability. Molded-in terminals minimize wicking of flux or solder. Flush, round, keyed or square actuator. Thru-hole mounting.
US # MJ122 EU # U5550 Round cap
M
Note - add digit from table to cap part numbers above for color. Example - MJ1212 indicates square black cap.

MJD210TF;中文规格书,Datasheet资料

MJD210TF;中文规格书,Datasheet资料

MJD210MJD210DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, or (c) whose failure to performwhen properly used in accordance with instructions for useprovided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can bereasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status DefinitionAdvance InformationFormative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.PreliminaryFirst ProductionThis datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.No Identification Needed Full ProductionThis datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.Obsolete Not In ProductionThis datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.A CEx™Bottomless™CoolFET™CROSSVOLT ™DenseTrench™DOME™EcoSPARK™E 2CMOS™EnSigna™FACT™FACT Quiet Series™FAST ®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™LittleFET™MicroFET™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN™POP™Power247™PowerTrench ®QFET™QS™QT Optoelectronics™Quiet Series™SLIENT SWITCHER ®SMART START™STAR*POWER™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TruTranslation™TinyLogic™UHC™UltraFET ®VCX™STAR*POWER is used under license分销商库存信息: FAIRCHILDMJD210TF。

22-16-2090;中文规格书,Datasheet资料

22-16-2090;中文规格书,Datasheet资料

Assy Proc: Hooks Cut: Housing No: Terminal No: Dim C: Plating: Packaging: Voids: Material No
22-14-2024 22-14-2034 22-14-2044 22-14-2054 22-14-2064 22-14-2074 22-14-2084 22-14-2094 22-14-2104 22-14-2114 22-14-2124 22-14-2134 22-14-2144 22-14-2154 22-14-2164 22-14-2174 22-14-2184 22-14-2194 22-14-2204 22-14-2214 22-14-2224 22-14-2234 22-14-2244 22-14-2254
/
KK 100 PCB ASSY 2-25 CKT
4455 SERIES
A-4455- *
ASSY PROCEDURE A=RIGHT ANGLE B=BOTTOM ENTRY C=TOP ENTRY
STANDARD PRODUCT
*
N
*
*-*
HOUSING TYPE A=4455-AN B=4455-BN E=4455-NHH H=4455-N2 P=4455-NR (HOOKS CUT OFF) R=4455-NR W=4455-N-2 (HOOKS CUT OFF) Y=4455-N (HOOKS CUT OFF) Z=4455-N NO OF CIRCUITS TERMINAL TYPE Code A B C D F G J L M T Number 4316-4 6516-4 6516-5C 4316-3B 6516-6C 4316-3 6516-3B 6516-3C 6516-4A 4316-4A Material Brass Phos Bronze Phos Bronze Brass Phos Bronze Brass Phos Bronze Phos Bronze Phos Bronze Brass Form Standard Standard Cat Ear / V Std / V Cat Ear / V Standard Std / V Cat Ear / V Cat Ear Cat Ear VOID LOCATION NUMBER = CIRCUIT VOIDED MULTIPLE VOIDS START WITH 51 BLANK = NONE

12232系列说明书

12232系列说明书

LCD12232系列点阵型液晶显示模块使用说明书一、液晶驱动IC基本特性1、具有低功耗、供应电压范围宽等特点。

2、具有16common和61segment输出,并可外接驱动IC扩展驱动。

3、具有2560位显示RAM(DD RAM),即80×8×4位4、具有与68系列或80系列相适配的MPU接口功能,并有专用的指令集,可完成文本显示或 图形显示的功能设置二、模块基本特性视域尺寸:60.5×18.0mm(12232-1/-2),54.8×18.3mm(12232-3)显示类型:黄底黑字LCD显示角度:6点钟直观驱动方式:1/32 duty,1/6 bias连接方式:导电胶条,铁框●补充说明:模块外观尺寸可根据用户的要求进行适度调整。

三、外形尺寸图图1 12232-1尺寸图图2 12232-2尺寸图图3 12232-3尺寸图四、工作参数1、逻辑工作电压(VDD-VSS):2.4~6.0V2、LCD驱动电压(Vdd-Vlcd):3.0~13.5V3、工作温度(Ta):0~55℃(常温) / -20~70℃(宽温)4、保存温度(Tstg):-10~70℃五、电气特性(测试条件 Ta=25,Vdd=5.0±0.25V)1、输入高电平(Vih):3.5Vmin2、输入低电平(Vil):0.55Vmax3、输出高电平(Voh):3.75Vmin4、输出低电平(Vol):1.0Vmax5、工作电流:2.0mAmax管脚说明:VDD:逻辑电源正GND(VSS): 逻辑电源地VO(VEE):LCD驱动电源RESET:复位端,对于68系列MPU:上升沿(L-H)复位,且复位后电平须保持为高电(H);对于80系列MPU:下降沿(H-L)复位,且复位后电平须保持为低电平(L)。

E1:读写使能。

对于68系列MPU,连接使能信号引脚,高电平有效;对于80系列MPU,连接/RD引脚,低电平有效。

RPI-222;中文规格书,Datasheet资料

RPI-222;中文规格书,Datasheet资料

Electrical and optical characteristics (T a =25°C )Electrical and optical characteristics curvesExternal dimensions (Unit : mm)Fig.1 Relative output current vs.distance ( )R E L A T I V E C O L L E C T O R C U R R E N T : I c (%)DISTANCE : d (mm)Fig.4 Relative output current vs.distance ( )R E L A T I V E C O L L E C T O R C U R R E N T : I c (%)DISTANCE : d (mm)Fig.2 Forward current falloffF O R W A R D C U R R E N T : I F (m A )AMBIENT TEMPERATURE : Ta (°C)10504030200Fig.10 Output characteristics C O L L E C T O R C U R R E N T : I c (m A )COLLECTOR TO EMITTER VOLTAGE : V CE (V)t d : Delay timet r : Rise time (time for output current to risefrom 10% to 90% of peak current)t f : Fall time (time for output current to fallfrom 90% to 10% of peak current)Fig.11 Response time measurement circuitFig.8 Response time vs.collector currentR E S P O N S E T I M E : t (µs )COLLECTOR CURRENT : Ic (mA)Fig.9 Dark current vs.ambient temperatureD A R K C U R RE N T : I D (n A )AMBIENT TEMPERATURE : Ta (°C)Fig.6 Relative output vs. ambienttemperatureR E L A T I V E C O L L E C T O R C U R R E N T : I c (%)AMBIENT TEMPERATURE : Ta (°C)020406080100120160140Fig.7 Collector current vs.forward currentC O L L E C T O R C U R R E N T : I c (m A )FORWARD CURRENT : I F (mA )0102030405001.02.0FORWARD VOLTAGE : V F (V ) F O R W A R D C U R R E N T : I F (m A )Fig.3 Forward current vs. forwardvoltage P O W E R D I S S I P A T I O N / C O L L E C T O R P O W E R D I S S I P A T I O N : P D / P c (m W )AMBIENT TEMPERATURE : Ta (°C)Fig.5 Power dissipation / collector powerdissipation vs. ambient temperature −20020P D P C40608010020406080100120AppendixAbout Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export T rade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.Appendix1-Rev1.1 /分销商库存信息: ROHMRPI-222。

MC9S12_datasheet中文

MC9S12_datasheet中文
目录
目录 .................................................................................................................................................. I 第一章 PWM模块 ...........................................................................................................................1 第一节 PWM模块介绍 .........................................................................................................1 第二节 PWM寄存器简介 .......................................................................2 2.1 PWME寄存器 ........................................................................................................2 2.2 PWMPOL寄存器...................................................................................................2 2.3 PWMCLK寄存器 ..................................................................

MODIS Land Cover Dynamics (MCD12Q2) 产品用户手册说明书

MODIS Land Cover Dynamics (MCD12Q2) 产品用户手册说明书

User Guide to Collection6.1MODIS Land Cover Dynamics(MCD12Q2)ProductJosh Gray,Damien Sulla-Menashe,and Mark A FriedlMarch14,2022The Collection6.1(C6.1)MODIS Land Cover Dynamics Product(MCD12Q2)provides science data sets (SDSs)that map global land surface phenology metrics(hereafter:“phenometrics”)at500meter spatial resolution and annual time step.Phenometrics are derived from time series of MODIS observed land surface greenness,specifically:time series of the2-band Enhanced Vegetation Index calculated from MODIS nadir BRDF adjusted surface reflectances(NBAR-EVI2).This user guide provides the following information related to the C6.1product:1.An overview of the MCD12Q2algorithm2.Important differences from the C5product3.Guidance on data portals,projections,and formats,to help users access and use the data.4.Contact information for users with questions that cannot be addressed through information or websitesprovided in this document.5.A table describing the different data sets and associated scaling and fill values.C6.1provides a minor update to C6that resolves one main issue in the C6product.Specifically,in C6.1,a fix was implemented to resolve spuriously early detection of greenup dates in a small proportion of pixels caused by a discontinuity in vegetation index time series across calendar years arising from the way that splines are fit to the data(see Section2.1).In addition,the processing pipeline was adjusted to allow product generation6months after the end of the calendar year,instead of12months,which allows the product to be generated in a more timely fashion.1Product OverviewThe MODIS C6.1MCD12Q2Land Surface Dynamics Product provides global maps of phenometrics at 500m and an annual time step since2001.The product contains25SDS(REF TABLE)that record the timing of phenometrics such as the onset of greenness increase,peak greenness,senesence,and dormancy; derivative features of the vegetation cycles such as the NBAR-EVI2amplitude,NBAR-EVI2minimum,and the integrated NBAR-EVI2over a vegetation cycle;as well as the total number of vegetation cycles detected for the product year,and overall and phenometric-specific QA/QC rmation is provided for up to two detected vegetation cycles to record multicropping,precipitation-driven greenup events,and other phenological regimes that deviate from the common single annual greenup/greendown event pattern.1.1Differences from Collection5ProductThe C6.1methodological approach and SDSs differ substantially from the previous C5product.Changes were designed to better capture phenometrics in systems with multiple vegetation cycles per year,to increase the reliability of retrieved phenometrics in tropical,arid,and semi-arid ecosystems,to more accurately represent phenometrics in systems where NBAR-EVI2time series do not closely resemble logistic growth patterns,to provide working QA/QC SDS,and to deliver phenometrics in a more usable and intuitive fashion when vegetation cycles cross calendar boundaries,especially in the Southern ers of C5products should note the additional SDS,the provision of overall and bit-packed,phenometric-specific QA/QC SDSs,the change to a days since1-1-1970standard for date delivery,and the adoption of a new standard for assigning vegetation cycles to product years:all phenometrics are delivered for vegetation cycles where the date of peak NBAR-EVI2is within the product’s calendar year.This particular change should ease difficulties in collating phenometrics across product years when vegetation cycles cross calendar year boundaries by ensuring that all phenometrics for a vegetation cycle are fully contained in a single product year.2MethodologyThe C6.1MCD12Q2product is created by assembling time series of NBAR-EVI2,eliminating outliers and filling dormant period values,fitting a QA/QC-weighted penalized cubic smoothing spline to the time series, identifying valid vegetation cycles within the time series,and then extracting and recording phenometrics for each vegetation cycle.All subsequent functions are applied to a time series of three consecutive years: the product year and preceding and subsequent years.2.1Spline FitNBAR-EVI2observations identified as being snow contaminated by the MCD432product,or where the corresponding NBAR-NDSI>−0.2,are filled with a dormant period value.The dormant NBAR-EVI2is taken to be the5th percentile snow-free value across the product year and its preceding and subsequent year,unless this differs by more than25%from the10th percentile snow-free value for the central year,in which case only the central year’s data are used to compute the background NBAR-EVI2value.This is to accommodate land cover changes that may alter the true dormant period NBAR-EVI2value.Missing NBAR-EVI2values between snow-contaminated observations are also filled with the dormant NBAR-EVI2 value.Finally,a penalized cubic smoothing spline is fit to the value with the weights proportional to the MCD43A2QA/QC flags.2.2Identifying Valid Vegetation CyclesValid vegetation phases in the time series are identified as periods of sustained increase in NBAR-EVI2 followed by sustained periods of decrease,subject to ecologically meaningful heuristics concerning the length of these periods and magnitude of the NBAR-EVI2amplitude.First,“peaks”in the NBAR-EVI2time seres are identified as points where the first derivative(numerically evaluated)changes sign(Fig.1A).These candidate peaks are sorted by NBAR-EVI2magnitude and then analyzed with a recursive function that attempts to identify associated start and end dates for the greenup/down segment.Figure1:Three years of a hypothetical splined NBAR-EVI2time series with potential peaks(upper-case letters),troughs(lower-case letters),and search windows for start/end of the segment corresponding to peak F marked(A).Diagram of phenometrics retrieved for a single hypothetical vegetation cycle(B).Illustration of the methodology used to determine the phenometric-specific QA/QC score(C).Starting with the smallest peak,the start of the greenup segment is sought as the date of the minimum NBAR-EVI2value closest to the candidate peak between30days prior to peak and the maximum of:the start of the time series,the closest of any preceding candidate peaks,or the candidate peak date minus a maximum greenup period length parameter(185days).This search windows are depicted in Fig.1A for the segment associated with peak F.If the NBAR-EVI2amplitude between this minimum value and the peak is greater than or equal to0.1,and greater than or equal to35%of the time series maximum NBAR-EVI2 minus the minimum NBAR-EVI2,then the identified greenup period is considered valid and an associated greendown period is sought.If these conditions are not met,then the candidate peak is removed from the list of candidate peaks.The end of the greendown period is sought in an identical manner,but in the opposite temporal direction.A candidate end date is identified as the date of the closest minimum NBAR-EVI2 value between30days after the candidate peak and the minimum of:the end of the time series,the closest of any following peaks,or the candidate peak date plus a maximum greendown length parameter(set to 185days;Fig.1A).The entire greenup and greendown segment is considered a valid vegetation cycle ifthe NBAR-EVI2amplitude between the candidate segment end date and candidate peak is greater than orequal to0.1.Otherwise,the candidate peak is eliminated.This process is repeated,each time updating the candidate peak list,until all candidate peaks are either eliminated or identified as belonging to a valid vegetation cycle.The full3-year time series is thus partitioned into valid vegetation cycles.For example,in Fig.1A,the potential peaks would first be sorted by NBAR-EVI2magnitude:D,C,A, G,F,H,E,and B.A segment start for potential peak D would be identified as trough d and the NBAR-EVI2 amplitude between points d and D calculated.Because this amplitude is less than the global minimum of0.1,peak D would be eliminated from the list of potential peaks.Similarly,the segment associated with peakC would be eliminated because although the NBAR-EVI2magnitude between points c and C exceeds0.1, it is less than35%of the maximum NBAR-EVI2variation exhibited over the three-year interval(minimum point d and maximum point B depict an amplitude of0.67,so the35%threshold is0.234,but c to C is0.2). Likewise,the potential segment associated with peak A would be eliminated because while the NBAR-EVI2 amplitude between a and A exceeds0.1and the35%threshold,the greendown portion(points A to b)does not.The segment start/end search windows shown in Fig.1A are for the segment associated with peak F.A segment start is sought as a NBAR-EVI2minimum point between the preceding peak E and30days prior to F.The segment end date is sought between a period30days after F and the next valid peak(G).Valid vegetation cycles would be retrieved for the segments associated with peaks B,E,F,G,and H.2.3Phenometric ExtractionIdentification of phenophase transition dates is performed on each of the identified vegetation cycles for which the peak date falls within the calendar year of the product year(e.g.phenometrics associated with peak F in Fig.1A would be delivered with product year2004).The first metric:number of vegetation cycles, is determined by simply counting the number of such peaks.Subsequent phenophase date retrieval,and quantification of associated QA,are performed only for up to two of the valid segments with highest segment NBAR-EVI2amplitude.That is,if there are three cycles,the number of vegetation cycles metric will reflect the correct number,but phenophase transitions will not be retrieved for the cycle with the lowest NBAR-EVI2amplitude(e.g.product year2004for the time series represented in Fig.1A would have3for number of cycles,but only phenometrics for segments associated with peaks F and H would be delivered).The start of greenup,greenup midpoint,and maturity dates are retrieved as the first date within the greenup segment where the NBAR-EVI2time series crosses15,50,and90%of the greenup segment NBAR-EVI2amplitude (peak NBAR-EVI2-segment start EVI;Fig.1B).Similarly,start of senescence,senescence midpoint,and dormancy are retrieved as the last date within the greendown segment where the NBAR-EVI2time series crosses90,50,and15%of the greendown segment NBAR-EVI2amplitude(peak NBAR-EVI2-segment end NBAR-EVI2;Fig.1B).All dates are converted to UNIX-epoch time:days since Jan1,1970.Segment integrated NBAR-EVI2is calculated as the sum of daily NBAR-EVI2values,minus the greenup segment minimum value,between the segment start and end dates(not from the start of greenup and dormancy;Fig. 1B).NBAR-EVI2amplitude and NBAR-EVI2minimum values are also recorded as distinct product layers (NBAR-EVI2maximum can be retrieved as NBAR-EVI2amplitude-NBAR-EVI2minimum).Quality assurance(QA)scores are calculated for each phenometric(detailed QA),and for the entire greenup/down segment(overall QA).These scores are a weighted combination of the fraction of not missing (e.g.due to snow)and not filled(e.g.with dormant NBAR-EVI2value)values(80%weight),and the spline goodness-of-fit(R2;20%weight),in the vicinity of each phenometric(2weeks before and after;detailed QA;Fig.1C)or within the entire segment(overall QA).These0–1scores are mapped to categories as:[1, 0.75)=0(best),[0.75,0.5)=1(good),[0.5,0.25)=2(fair),and[0.25,0]=3(poor).Detailed QA scores are thenbit-packed into a single16-bit integer value,whereas the overall QA score is retained as a separate product layer(details on detailed QA below).3Data Formats and ProjectionMCD12Q2data are provided as tiles that are approximately10◦x10◦at the Equator using a Sinusoidal grid in HDF4file rmation related to the MODIS sinusoidal projection and the HDF4file format can be found at:•MODIS tile grid:/MODLAND_grid.html•MODIS HDF4:/products/hdf4/Several parameters are needed to reproject the Sinusoidal HDF4files to other projections using widely used software such as GDAL.Here we provide the values used for the upper left corner of the grid,the size of a single pixel,and the Sinusoidal projection string in Cartographic Projections Library(PROJ4)and Well-Known Text(WKT)formats.•ULY Grid=10007554.677,ULX Grid=-20015109.354•Pixel Size(m)=463.312716525•Number of Pixels per Tile=2400•Projection InformationPROJ4:‘+proj=sinu+a=6371007.181+b=6371007.181+units=m’WKT:PROJCS["Sinusoidal",GEOGCS["GCS_unnamed ellipse",DATUM["D_unknown",SPHEROID["Unknown",6371007.181,0]],PRIMEM["Greenwich",0],UNIT["Degree",0.017453292519943295]],PROJECTION["Sinusoidal"],PARAMETER["central_meridian",0],PARAMETER["false_easting",0],PARAMETER["false_northing",0],UNIT["Meter",1]3.1Accessing MODIS Data ProductsSeveral ways to access the MODIS data products are listed below.More info about the data sets,data formats,and quality information are available from the Land Processes DAAC.For MCD12Q2the link is https:///dataset_discovery/modis/modis_products_table/mcd12q2_v006•Bulk download:LP DAAC Data Pool and DAAC2Disk.•Search and browse:USGS EarthExplorer and NASA Earthdata Search.3.2Known Issues and Sources of Uncertainty•Greenup and Dormancy phenometrics are anomalously early/late in some high-latitude regions with low-amplitude NBAR-EVI2variation.This likely results from the splining approach assuming a dor-mant period NBAR-EVI2value that is too low.The cause and a fix are being investigated,but until a fix is devised,users are encouraged to use the more realistic and stable MidGreenup and MidGreendown metrics to capture season start/end in these regions(e.g.high-latitude evergreen forests).•In some semi-arid and arid environments exhibiting low-amplitude NBAR-EVI2variation,there are large differences in filled pixels between the Collection5and Collection6products.Collection6 typically retrieves fewer pixels because it applies a global minimum NBAR-EVI2amplitude requirement of0.1in addition to the relative amplitude requirements in Collection5(valid segments must have NBAR-EVI2amplitude that is at least35%of the3-year max-min.)•For pixels with more than two valid vegetation cycles,the two cycles that are documented in the product may not be temporally adjacent.Instead,they are the two cycles with the largest NBAR-EVI2amplitudes.That is,the two cycles may have a temporally intervening cycle of lower amplitude.•Because heterogeneous land cover/use results in NBAR-EVI2time series that are a mixture of perhaps distinct phenologies,users should be careful in interpreting multi-cycle results.They are not,for example,guaranteed to represent two distinct cropping cycles,but may instead capture two different sub-pixel scale fields with very different sow/harvest dates.•Users may notice substantial differences in patterns of missing data between Collections5and6in the Southern Hemisphere.This is mostly a result of the difference in methodology whereby phenometrics are assigned to particular product years.Collection5phenometrics are delivered with the product year associated with the year of the particular phenometric,and so the phenometrics associated witha particular vegetation cycle may be spread across multiple product years.In Collection6,the pheno-metrics for a particular cycle are always kept together,and delivered with the product year associated with the calendar year in which the Peak phenometric falls.4Contact InformationUser Contact:•Josh Gray(****************)•Mark Friedl(*************)5Science Data SetsTable1describes the Science Data Sets contained in the MCD12Q2Collection6product.All SDS have a 16-bit integer data type.All except”NumCycles”contain two data layers corresponding to up to two valid vegetation cycles.Overall QA can be interpreted directly as an integer,but Detailed QA is bit-packed and so must be unpacked for proper interpretation(details and examples below).The QA Overall SDS provides a simple representation of the quality of retrievals for a particular vegeta-tion cycle.As previously described,it is calculated from a weighted combination of the fraction of missingT a b l e 1:M C D 12Q 2S c i e n c e D a t a S e t s .S D S N a m e D e s c r i p t i o n L a y e r s D a t a T y p e U n i t s V a l i d R a n g e F i l l V a l u e S c a l e F a c t o r N u m C y c l e sT o t a l n u m b e r o f v a l i d v e g -e t a t i o n c y c l e s w i t h p e a k i n p r o d u c t y e a r 1I N T 16n o n e 1–7327671G r e e n u p D a t e w h e n E V I 2fi r s t c r o s s e d 15%o f t h e s e g -m e n t E V I 2a m p l i t u d e 2I N T 16d a y s s i n c e 1-1-197011138–32766327671M i d G r e e n u p D a t e w h e n E V I 2fi r s t c r o s s e d 50%o f t h e s e g -m e n t E V I 2a m p l i t u d e 2I N T 16d a y s s i n c e 1-1-197011138–32766327671M a t u r i t y D a t e w h e n E V I 2fi r s t c r o s s e d 90%o f t h e s e g -m e n t E V I 2a m p l i t u d e 2I N T 16d a y s s i n c e 1-1-197011138–32766327671P e a kD a t e w h e nE V I 2r e a c h e d t h e s e g m e n t m a x i m u m 2I N T 16d a y s s i n c e 1-1-197011138–32766327671S e n e s c e n c eD a t e w h e nE V I 2l a s t c r o s s e d 90%o f t h e s e g -m e n t E V I 2a m p l i t u d e 2I N T 16d a y s s i n c e 1-1-197011138–32766327671M i d G r e e n d o w n D a t e w h e n E V I 2l a s t c r o s s e d 50%o f t h e s e g -m e n t E V I 2a m p l i t u d e 2I N T 16d a y s s i n ce 1-1-197011138–32766327671D o r m a n c y D a t e w h e nE V I 2l a s t c r o s s e d 15%o f t h e s e g -m e n t E V I 2a m p l i t u d e 2I N T 16d a y s s i n ce 1-1-197011138–32766327671E V I M i n i m u m S e g m e n t m i n i m u m E V I 2v a l u e 2I N T 16N B A R -E V I 20–10000327670.0001E V I A m p l i t u d eS e g m e n t m a x i m u m -m i n -i m u m E V I 22I N T 16N B A R -E V I 20–10000327670.0001E V I A r e aS u m o f d a i l y i n t e r p o l a t e d E V I 2f r o m G r e e n u p t o D o r m a n c y 2I N T 16N B A R -E V I 20–3700327670.1Q A O v e r a l l Q A c o d e f o r e n t i r e s e g -m e n t 2I N T 16n o n e0–3327671Q A D e t a i l e dB i t -p a c k e d ,S D S -s p e c i fi c Q A c o d e s2I N T 16n o n e0–16383327671or filled NBAR-EVI2data in the cycle,and the goodness of fit of the smoothing spline.Values are in the range0–3corresponding to“best”,“good”,“fair”,and“poor”.The QA Detailed SDS contains bit-packed QA information for each date phenometric(e.g.Greenup,MidGreenup,etc.).Individual QA values have an identical interpretation as QA Overall.However,accessing these scores requires the user to convert the 16-bit integer value to binary,and then retrieve specific bit pairs that may then be converted to an integerin the range0–3.Figure2provides a visual example of this conversion,and Table2provides some examplesof arbitrary QA scores and their16-bit integer value to aid users in verifying their interpretation.Figure2:An example QA Detailed16-bit integer value,its binary representation,and associated phenometric-specific bit pair interpretation.Table2:Detailed QA example valuesGreenup MidGreenup Maturity Peak Senescence MidGreendown Dormancy Value 00000000 11111115461 321123315963 120102314409 333333316383Here is an example R function that converts raw values of QA Detailed to a vector of0–3quality scoresin the order:Greenup,MidGreenup,Maturity,Peak,Senescence,MidGreendown,Dormancy:UnpackDetailedQA<-function(x){bits<-as.integer(intToBits(x))quals<-sapply(seq(1,16,by=2),function(i)sum(bits[i:(i+1)]*2^c(0,1)))[1:7]return(quals)}。

MS-122XD 产品说明书

MS-122XD 产品说明书

1. CHEMICAL PRODUCT/COMPANY IDENTIFICATIONName: MS-122XD Product Use: Release Agent or Dry LubricantDPMS-Z0612APTFE Release Agent/Dry LubricantMANUFACTURER/DISTRIBUTOR: Emergency Phone Number:(800) 424-9300Miller-Stephenson Chemical55 Backus Ave.Danbury, Conn. 06810 USA(203) 743-44472. HAZARDS IDENTIFICATIONHazard Classification: Gases under pressure – Liquefied GasLabel elements:Single Word: WarningHazard StatementsContains gas under pressure; may explode if heated.May displace oxygen and cause rapid suffocation.Precautionary Statements:Do not pierce or burn, even after use.Protect from sunlight. Do not expose to temperatures exceeding 50°C/122°F.Dispose of contents/container to an approved waste disposal plant.Other hazards which do not result in classification or are not covered by GHSVapors are heavier than air and can cause suffocation by reducing oxygen available for breathing.The thermal decomposition vapors of fluorinated polymers may cause polymer fume fever with flu-like symptoms in humans, especially when smoking contaminated tobacco.3. INGREDIENTSMaterial (s) CAS No. Approximate %1,1,1,2-Tetrafluoroethane 811-97-2 80 - 901,1,1,2,2,3,4,5,5,5-Decafluoropentane 138495-42-8 9 - 154. FIRST AID MEASURESInhalation: Remove patient to fresh air. Get medical attention if necessary.Eye: Flush with a large amount of water. Get medical attention if irritation develops and persists.Skin: Wash skin with soap and water after contact. Get medical attention if symptoms occur.Oral: If swallowed, Do NOT induce vomiting. Rinse mouth thoroughly with water. Get medical attention if symptoms occur.Note to physician: Treat symptomatically and supportively.5. FIRE FIGHTING MEASURESFlammability: This product is not flammable. Test Method: Ignition distance test and Enclosed space ignition testFire and Explosion: Aerosols may rupture under fire conditions. Decomposition may occur.Extinguishing Media: Water spray, Alcohol-resistant foam, Dry chemical, Carbon dioxide (CO2)Specific hazards during firefighting: Exposure to combustion products may be a hazard to health. Aerosols will rupture under fire conditions due to the heat and high pressure.Hazardous combustion products: Carbon oxides, Hydrogen fluoride, Carbonyl fluoride, Potentially toxic fluorinated compounds. Special Fire Fighting Instruction: Evacuate area. Use water spray to cool aerosols. Fire residues and contaminated fire extinguishing water must be disposed of in accordance with local regulations. Do not breathe fumes or vapors from fire. Self-contained breathing apparatus (SCBA) maybe required if a large amount of aerosols rupture under fire conditions. Fight fire from a distance, heat may rupture containers.6.ACCIDENTAL RELEASE MEASURESPersonal precautions, protective equipment, and emergency procedures: Evacuate area. Ventilate the area with fresh air. Use personal protective equipment. If a large amount of aerosols rupture and spill in confined areas, provide mechanical ventilation to disperse the vapors.Environmental precautions: Avoid release to the environment. Prevent material from entering sewers, waterways, or low areas.Do not allow contact with soil, surface, or ground water. Local authorities should be advised if significant spillages cannot be contained.Methods and material for containment and cleaning up: Contain spillage, and then collect with inert absorbent material,(e.g. sand, earth, diatomaceous earth, vermiculite) and place in container for disposal according to local / national regulations.7.HANDLING AND STORAGEHandling: Use in a well-ventilated area to avoid breathing vapors. Use only with adequate ventilation. Use appropriate respiratory protection, when ventilation is inadequate. Avoid contact with skin or eyes. Wash thoroughly after handling.Storage Conditions: Do not store near sources of heat, in direct sunlight or where temperatures exceed 120o F/49o C.8.EXPOSURE CONTROLS/PERSONAL PROTECTIONExposure Limits:ACGIH OSHA1,1,1,2-Tetrafluoroethane Not Established Not Established1,1,1,2,2,3,4,5,5,5-Decafluoropentane Not Established Not EstablishedRespiratory Protection: General and local exhaust ventilation is recommended to maintain vapor exposures below recommended limits. Where concentrations are above recommended limits or are unknown, appropriate respiratory protection should be worn. Follow OSHA respirator regulations (29 CFR 1910.134) and use NIOSH/MSHA approved respirators. Protection provided by air purifying respirators against exposure to any hazardous chemical is limited. Use a positive pressure air supplied respirator if there is any potential for uncontrolled release, exposure levels are unknown, or any other circumstance where air purifying respirators may not provide adequate protection.Eye Protection: Avoid eye contact. Use chemical goggles or safety glasses with side shields.Skin Protection: Avoid contact with skin. Use gloves impervious when prolonged or frequently repeated contact occurs. Wash hands before breaks and at the end of workday. Breakthrough time is not determined for the product. Change gloves often.Prevention of Swallowing: Do not eat, drink or smoke when using this product. Wash hands thoroughly after contact.9.PHYSICAL AND CHEMICAL PROPERTIESBoiling Point: Not Applicable Percent Volatile by Volume: 99%Density: 1.25 g/cc at 77o F/25o C Vapor Pressure: 80 psig at 77o F/25o CVapor Density (Air=1): >1 Solubility in H2O : InsolublepH Information: Neutral Evaporation Rate (CC14=1): >1Form: Aerosol Appearance: MilkyColor: White Odor: Faint Ethereal Odor10. STABILITY AND REACTIVITYReactivity: Not classified as a reactivity hazard.Chemical Stability: Stable at normal conditions.Material and Conditions to Avoid: None known.Hazardous Decomposition: This product can be decomposed by high temperatures (flame, glowing metal surfaces, etc.) forming Hydrofluoric acid, Carbonyl difluoride, Carbon monoxide and Carbon dioxide.11. TOXICOLOGICAL INFORMATION1,1,1,2-TetrafluoroethaneAcute Inhalation:LC50 (Rat) > 567000, 4 h. Test atmosphere: gas. Method: OECD Test Guideline 403No observed adverse effect concentration (Dog): 40000 ppm. Test atmosphere: gas. Remarks: Cardiac sensitizationLowest observed adverse effect concentration (Dog): 80000 ppm. Test atmosphere: gas. Symptoms: May cause cardiac arrhythmia. Cardiac sensitization threshold limit (Dog): 334,000 mg/m³. Test atmosphere: gas. Symptoms: May cause cardiac arrhythmia.Skin corrosion/irritation: No skin irritation.Serious eye damage/eye irritation: No eye irritation.Respiratory or skin sensitization: Not classified based on available information. Negative in Rat: Skin contact and Inhalation. Germ cell mutagenicity: Weight of evidence does not support classification as a germ cell mutagen.Test Type: Mammalian erythrocyte micronucleus test (in vivo cytogentic assay) Species: MouseApplication Route: inhalation (gas) Method: OECD Test Guideline 474 Result: negativeTest Type: Unscheduled DNA synthesis (UDS) test with mammalian liver cells in vivo Species: RatApplication Route: inhalation (gas) Method: OECD Test Guideline 486 Result: negativeCarcinogenicity: Weight of evidence does not support classification as a carcinogen. Rat by inhalation (gas) for 2 years is negative. Method: OECD Test guideline 453Reproductive toxicity: Weight of evidence does not support classification for reproduction toxicity.Effects on fertility: Mouse by inhalation is negative.Effects on fetal development: Test type: Combined repeated dose toxicity study with the reproduction/development toxicity screening test in Rabbit by inhalation (gas) is negative. Method: OECD Test Guideline 414STOT-single exposure: Not classified based on available information. No significant health effects observed in animals at concentrations of 20000V/4H or less by inhalation (gas).STOT-Repeated exposure: Not classified based on available information. No significant health effects observed in animals at concentrations of 20000V/4H or less by inhalation (gas).Aspiration toxicity: No aspiration toxicity classification.1,1,1,2,2,3,4,5,5,5-DecafluoropentaneInformation on likely routes of exposure: Inhalation, Skin contact, Ingestion, Eye contactAcute Oral: LD50: > 5000 mg/kg in ratsAcute Inhalation (vapor): 4 hour LC50: 114 mg/l in ratsAcute Dermal: LD50: > 5000 mg/kg in ratsSkin Corrosion/Irritation: No skin irritation in rabbits.Serious Eye Irritation/ Eye Irritation: No eye irritation in rabbits.Skin Sensitization: No skin sensitization in Guinea pigs.Respiratory Sensitization: Not classified based on available information.Germ Cell Mutagenicity: Weight of evidence does not support classification as a germ cell mutagen.Carcinogenicity: Not classified based on available information.Reproductive toxicity: Weight of evidence does not support classification as a germ cell mutagen.STOT-single exposure: Not classified based on available information.STOT-repeated exposure: No significant health effects observed in animals at concentrations of 1mg/l/6h/d or less.Aspiration toxicity: Not classified based on available information.12. ECOLOGICAL INFORMATION1,1,1,2-TetrafluoroethaneToxicity to fish: 96 hour LC50 (Oncorhynchus mykiss (rainbow trout)): 450 mg/l. Method: Regulation (EC) No. 440/2008, Annex, C.1 Toxicity to daphnia and other: 48 hour EC50 (Daphnia magna (Water flea)): 980 mg/l. Method: Regulation (EC) No. 440/2008, Annex, C.2Toxicity to algae: 96 hour ErC50 (algae): 100 mg/l. Based on data from similar materials.Biodegradability: Not readily biodegradable. Method: OECD Test Guideline 301DBioaccumulative potential: Bioaccumulation is unlikely. Partition coefficient n-octanol/ water (log Pow): 1.06Mobility in soil: No data availableOther adverse effects: No data available1,1,1,2,2,3,4,5,5,5-Decafluoropentane96 hour LC50 in Oncorhynchus mykiss (rainbow trout): 13.9 mg/l96 hour LC50 in Pimephales promelas (fathead minnow): 27.2 mg/196 hour LC50 in Danio rerio (zebra fish): 13 mg/l48 hour LC50 in Daphnia magna (Water flea): 11.7 mg/l72 hour EC50 in Pseudokirchneriella subcapitata (Green algae): >120 mg/l21 days NOEC in Daphnia magna (Water flea): 1.72 mg/lBiodegradability: Not readily biodegradable.Bioaccumulative potential: Bioaccumulation is unlikely.Mobility in soil: No data available13.DISPOSAL CONSIDERATIONSComply with federal, state, and local regulations. Remove to a permitted waste disposal facility. Do not puncture or incinerate cans. Empty aerosol cans before disposal.14.TRANSPORT INFORMATIONU.S. DOTLimited QuantityIATAProper Shipping Name: Aerosols, Non-FlammableHazard Class: 2.2Identification No. UN1950Packing Group: NoneIMDGProper Shipping Name: Aerosols, Non-FlammableHazard Class: 2.2Identification No. UN1950Packing Group: None15. REGULATORY INFORMATIONU.S. Federal RegulationsTSCA: All ingredients are listed in TSCA inventory.1,1,1,2,2,3,4,5,5,5-Decafluoropentane(CAS# 138495-42-8) - The United States Environmental Protection Agency has established a Significant New Use Rule (SNUR; 40 CFR 721.5645) for this product. Also, this product requires an export notification under TSCA Section 12(b) and 40 CFR Part 707 Subpart D.U.S. State RegulationsCalifornia Prop. 65WARNING: This product can expose you to chemicals including pentadecafluorooctanoic acid, which is/are known to the State of California to cause birth defects or other reproductive harm. For more information go to . Note to User: This product is not made with PFOA nor is PFOA intentionally present in the product; however, it is possible that PFOA may be present as an impurity at background (environmental) levels.16. OTHER INFORMATIONNPCA-HMIS Ratings:Health - 1Flammability - 0Reactivity - 0Personal Protective rating to be supplied by user depending on the conditions.FOR INDUSTRIAL USE ONLYREVISION DATE: APRIL 2022The information provided in this Safety Data Sheet is correct to the best of our knowledge, information and belief at the date of its publication. The information given is designed only as a guidance for safe handling, use, processing, storage, transportation, disposal and release and is not to be considered a warranty or quality specification. The information relates only to the specific material designated and may not be valid for such material used in combination with any other materials or in any process, unless specified in the text. Final determination of suitability of any material is the sole responsibility of the user.。

PHILIPS MCD122 说明书

PHILIPS MCD122 说明书

• •
14

» »
• • •
»
»

» • • • • •
• •
®
15
• •
• • • •
• •
• • • •
• • • •
• • • •
16
» •


» • »


• • • • •


17
» »
18
• •
– –
• •
• • • ®

®
正常/全景
正常/信箱
16:9 宽银幕
• •
– –
• • • • – – –
O X X
(PBB) O O O O O O
(PBDE) O O O O O O
O O
X
O O O O O O
O O O O O O
O
X X
O O O
Batteries in Remote Control (ZnC)
X
O
O
O
O
O
SJ/T11363 - 2006 O: Indicates that this toxic or hazardous substance contained in all of the homogeneous materials for this part is below the limit requirement in SJ/T11363 – 2006. SJ/T11363 – 2006 X: Indicates that this toxic or hazardous substance contained in at least one of the homogeneous materials used for this part is above the limit requirement in SJ/T11363 - 2006.

MJ12022资料

MJ12022资料

isc Website:
元器件交易网
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
VALUE 850 450 6 15 20 10 15 175 200 -65~200
UNIT V V V A A A A W ℃ ℃
TERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W
SYMBOL VCEV VCEO(SUS) VEBO IC ICM IB
B
PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature
MJ12022
TYP.
MAX
UNIT V
1.2 1.5 0.25 1.5 2.5 1.0
V V mA mA mA
MHz 400 pF
Switching times;Inductive Load ts tf Storage Time Fall Time IC= 10A , VCC= 120V; IB1= 2A; PW= 8μs; VBE(off)= 4V Duty Cycle≤2.0% 820 100 1800 300 ns ns

RPI-122F;中文规格书,Datasheet资料

RPI-122F;中文规格书,Datasheet资料

Symbol
Limits
Unit
IF
50
mA
VR
5
V
PD
80
mW
VCEO
30
V
VECO
4.5
V
IC
30
mA
PC
80
mW
Topr
−25 to +85
°C
Tstg
−40 to +100
°C
Applications
Optical control equipment Cameras Floppy disk drives


0.3
V IF=20mA, IC=0.3mA
tr tf

10

µs VCC=5V, IF=20mA, RL=100Ω
fC

1

MHz IF=50mA
λP

950

nm
∗ Non-coherent Infrared light emitting diode used.
tr tf

10

µs
VCC=5V, IC=1mA, RL=100Ω
Fig.8 Response time vs. collector current
Input VCC
Input Output RL
90%
Output td tr
10% tf
td : Delay time t r :Rise time (time for output current to rise from
125
100
75
50
25
0
  1. 1、下载文档前请自行甄别文档内容的完整性,平台不提供额外的编辑、内容补充、找答案等附加服务。
  2. 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
  3. 3、如文档侵犯您的权益,请联系客服反馈,我们会尽快为您处理(人工客服工作时间:9:00-18:30)。

Value 100 100 5 8 16 120 20 1.75 150
- 65 to 150
Units V V V A A mA W W °C °C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
intended to be an exhaustive list of all such trademarks.
AccuPower¥ Auto-SPM¥ Build it Now¥ CorePLUS¥ CorePOWER¥ CROSSVOLT¥ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™*
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
10
VCC= 30V IC=250IB IB1=IB2
1 tR
tD, VBE(off)=0 0.1
tR,tD[μs], TURN ON TIME
1
D-PAK
1.Base 2.Collector 3.Emitter
December 2009
Equivalent Circuit C
B
R1 R1 ≅ 8kΩ R2 ≅ 0.12kΩ
R2 E
Absolute Maximum Ratings TA=25°C unless otherwise noted
MJD122 Rev. B0
1

/
MJD122 — NPN Silicon Darlington Transistor
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
Typical Performance Characteristics
™*
®
Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore¥ FETBench¥ FlashWriter®*
FPS¥ F-PFS¥ FRFET® Global Power ResourceSM Green FPS¥ Green FPS¥ e-Series¥ Gmax™ GTO¥ IntelliMAX¥ ISOPLANAR¥ MegaBuck™ MICROCOUPLER¥ MicroFET¥ MicroPak¥ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR®
(0.70) (0.90) (1.00)
(2XR0.25)
(0.10) (3.05)
9.50 ±0.30 6.10 ±0.20
2.70 ±0.20
0.76 ±0.10
© 2009 Fairchild Semiconductor Corporation
MJD122 Rev. B0
4
/
9.50 ±0.30
MIN0.55
0.80 ±0.20 0.60 ±0.20
0.89 ±0.10
MAX0.96
2.30TYP [2.30±0.20]
0.76 ±0.10
2.30TYP [2.30±0.20]
6.60 ±0.20 (5.34) (5.04) (1.50)
0.50 ±0.10 1.02 ±0.20 2.30 ±0.20
0.1
0.01 1
10
100
1000
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 6. Safe Operating Area
ቤተ መጻሕፍቲ ባይዱ
© 2009 Fairchild Semiconductor Corporation
MJD122 Rev. B0
2

Cob[pF], CAPACITANCE
tSTG,tF[μs], TURN OFF TIME
1
0.1
1
10
100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Output Capacitance
10
VCC=30V IC=250IB
tSTG
1
tF
0.1
MJD122 — NPN Silicon Darlington Transistor
MJD122 NPN Silicon Darlington Transistor
Features
• D-PAK for Surface Mount Applications • High DC Current Gain • Built-in a Damper Diode at E-C • Lead Formed for Surface Mount Applications • Electrically Similar to Popular TIP122 • Complement to MJD127
IC = 30mA, IB = 0
VCE = 50V, IB =0
VCB = 100V, IE = 0
VEB = 5V, IC = 0
VCE = 4V, IC = 4A VCE = 4V, VEB = 8A
IC = 4A, IB = 16mA IC = 8A, IB = 80mA
IC = 8A, IB = 80mA
VCEO(sus) ICEO ICBO IEBO hFE
*Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current *DC Current Gain
/
MJD122 — NPN Silicon Darlington Transistor
Typical Performance Characteristics (Continued)
PC[W], POWER DISSIPATION
25
20
15
10
5
0
0
25
50
75
100
10k
VCE = 4V
1k
10
VBE(sat) 1
VCE(sat)
0.1
IC = 250 IB
hFE, DC CURRENT GAIN
100
0.1
1
10
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
1000
100
10
0.01
0.1
1
10
100
IC[A], COLLECTOR CURRENT
®*
The Power Franchise®
TinyBoost¥ TinyBuck¥ TinyCalc¥ TinyLogic® TINYOPTO¥ TinyPower¥ TinyPWM¥ TinyWire¥ TriFault Detect¥ TRUECURRENT¥* PSerDes¥
UHC® Ultra FRFET¥ UniFET¥ VCX¥ VisualMax¥ XS™
125
150
175
TC[oC], CASE TEMPERATURE
Figure 1. Power Derating
© 2009 Fairchild Semiconductor Corporation
MJD122 Rev. B0
3
/

Dimensions in Millimeters
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
MJD122 — NPN Silicon Darlington Transistor
Mechanical Dimensions
D-PAK
(0.50)
6.60 ±0.20 5.34 ±0.30
(4.34)
(0.50)
2.30 ±0.10 0.50 ±0.10
0.70 ±0.20
0.91 ±0.10
2.70 ±0.20 6.10 ±0.20
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
相关文档
最新文档