RCLAMP0502B.TCT中文资料
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SR05.TCT中文资料
Forward Voltage vs. Forward Current
10 9
% Change in Capacitance 0 -2 -4 -6 -8 -10 -12 -14 -16
Capacitance vs. Reverse Voltage
Forward Voltage - V F (V)
8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 50 Forward Current - IF (A) Waveform Parameters: tr = 8µs td = 20µs
SR05
Mechanical Characteristics
JEDEC SOT-143 package UL 497B listed Molding compound flammability rating: UL 94V-0 Marking : R05 Packaging : Tape and Reel per EIA 481
0
25
50
75
100
125
150
Ambient Temperature - TA (oC)
Pulse Waveform
110 100 90 80 Percent of IPP 70 60 50 40 30 20 10 0 0 5 10 15 Time (µs) 20 25 30 td = IPP/2 e
10 Peak Pulse Power - PPk (kW)
Power Derating Curve
1IP 90 80 70 60 50 40 30 20 10 0
1
0.1
RClamp0504S.TCT中文资料
PROTECTION PRODUCTS - RailClamp Description
RailClamps are surge rated diode arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE (Cable Discharge Events), and EFT (electrical fast transients). The unique design incorporates surge rated, low capacitance steering diodes and a TVS diode in a single package. During transient conditions, the steering diodes direct the transient to either the positive side of the power supply line or to ground. The internal TVS diode prevents over-voltage on the power line, protecting any downstream components. The low capacitance array configuration allows the user to protect four high-speed data or transmission lines. The low inductance construction minimizes voltage overshoot during high current surges. This device is optimized for ESD protection of portable electronics. They may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge).
RailClamps are surge rated diode arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE (Cable Discharge Events), and EFT (electrical fast transients). The unique design incorporates surge rated, low capacitance steering diodes and a TVS diode in a single package. During transient conditions, the steering diodes direct the transient to either the positive side of the power supply line or to ground. The internal TVS diode prevents over-voltage on the power line, protecting any downstream components. The low capacitance array configuration allows the user to protect four high-speed data or transmission lines. The low inductance construction minimizes voltage overshoot during high current surges. This device is optimized for ESD protection of portable electronics. They may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge).
RCLAMP0821P中文资料
Mechanical Characteristics
SLP1006P2 package Molding compound flammability rating: UL 94V-0 Marking: Marking code Packaging : Tape and Reel Lead Finish: NiPdAu RoHS/WEEE Compliant
I/O Line
RClamp0821P
RClamp0821P Spice Model
Table 1 - RClamp0821P Spice Parameters
Parameter
Unit
D1 (LCRD) D2 (LCRD)
IS
Amp
1.0E-20
1.0E-20
BV
Vlt
0.7
元器件交易网
PROTECTION PRODUCTS Applications Information
Device Connection Options
These low capacitance TVS diodes are designed to provide common mode protection for one high-speed line or differential protection for one line pair. The device is bidirectional and may be used on lines where the signal polarity is positive and negative.
1.8 GHz
1
2 34
3: .00910 dB 2.5 GHz
4: -.11980 dB 2.7 GHz
SLP1006P2 package Molding compound flammability rating: UL 94V-0 Marking: Marking code Packaging : Tape and Reel Lead Finish: NiPdAu RoHS/WEEE Compliant
I/O Line
RClamp0821P
RClamp0821P Spice Model
Table 1 - RClamp0821P Spice Parameters
Parameter
Unit
D1 (LCRD) D2 (LCRD)
IS
Amp
1.0E-20
1.0E-20
BV
Vlt
0.7
元器件交易网
PROTECTION PRODUCTS Applications Information
Device Connection Options
These low capacitance TVS diodes are designed to provide common mode protection for one high-speed line or differential protection for one line pair. The device is bidirectional and may be used on lines where the signal polarity is positive and negative.
1.8 GHz
1
2 34
3: .00910 dB 2.5 GHz
4: -.11980 dB 2.7 GHz
PTB20258资料
0
20
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25°C
ICQ = 27 mA
12
10
ICQ = 7 mA
8
ICQ = 14 mA VCC = 25V
f = 960 MHz
6
0.10
1.00
Output Power (W)
10.00
Impedance Data
(VCC = 25 Vdc, Pout = 6 W, ICQ = 27 mA)
Z Source
Z Load
RF Specifications (100% Tested)
Characteristic
Gain (VCC = 25 Vdc, Pout = 6 W, ICQ = 27 mA, f = 960 MHz)
Collector Efficiency (VCC = 25 Vdc, Pout = 6 W, ICQ = 27 mA, f = 960 MHz)
(as measured in a broadband circuit)
13
VCC = 25 V
12
ICQ = 27 mA
POUT = 6 W
11
10
RCLAMP0522P中文资料
Applications
High Definition Multi-Media Interface (HDMI) Digital Visual Interface (DVI) Unified Display Interface (UDI) DisplayPortTM Interface MDDI Ports PCI Express Serial ATA
RClamp0522P RClamp0524P
PRELIMINARY
Power Derating Curve
110 100 90 80 70 60 50 40 30 20 10 0
PROTECTION PRODUCTS Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
Pin 1
Pin 2
Pin 1
Pin 2
Pin 4
Pin 5
3, 4
3, 8
Circuit Diagram
Circuit Diagram
Ordering Information
Part Number RClamp0522P.TCT RClamp0524P.TCT Number of Lines Qty per Reel Reel Size 7 Inch 7 Inch
PRELIMINARY
RClamp0522P RClamp0524P
RClamp0524P
10 9 8 7 6
1
Pin 1-2 5-6 3-4
2
3
Identification Input Lines Output Lines (No Internal Connection) Ground Pin
rclamp0502b工作原理
rClamp0502B是一款常见的电阻器，其工作原理是基于欧姆定律。
当电流流过电阻器时，电阻器会对其产生一定的电压降，同时也会产生一定的功率损耗。
rClamp0502B的电阻值可以通过调整电阻丝的直径或长度来改变，从而控制通过电阻器的电流大小，进而实现对电压或电流的限制作用。
具体来说，当电源为rClamp0502B提供电流时，电阻器会产生电压降，该电压降被用来调节通过电路中的电流。
如果电路中的电流超过设定的阈值，电阻器将通过消耗更多的功率来降低电流，从而起到保护电路的作用。
这种保护机制可以防止电路过载，避免电路中的元器件受到损坏。
除了限制电流的作用外，rClamp0502B还可以用作分压器。
当两个电阻器串联时，它们的电压将按照电阻值的大小进行分配。
因此，如果一个电阻器的电阻值较大，那么它将会承受更多的电压，而另一个电阻器则承受较小的电压。
这种分压方式可以用于调节电路中的电压，以满足电路中其他元器件的需求。
此外，rClamp0502B还具有一些其他的特点和优点。
首先，它是一种常见的电子元件，价格相对较低，易于购买和更换。
其次，它具有较高的稳定性和可靠性，可以长时间稳定工作而不易损坏。
最后，rClamp0502B的体积较小，易于集成到电路板中，有利于提高电路的可靠性和便携性。
总之，rClamp0502B的工作原理是基于欧姆定律，通过限制电流或用作分压器来保护电路中的元器件。
它是一种常见的电子元件，具有较高的稳定性和可靠性，易于购买和更换，适用于各种电路中的电压和电流调节需求。
在实际应用中，rClamp0502B通常与其他电子元件配合使用，以实现更复杂的功能和系统优化。
RCLAMP0524J.TCT中文资料
Cj
Conditions
Any I/O pin to ground
It = 1mA Any I/O pin to ground
VRWM = 5V, T=25°C Any I/O pin to ground
IPP = 1A, tp = 8/20μs Any I/O pin to ground
V = 0V, f = 1MHz R
Dimensions
Circuit Diagram
2.70 0.40
12
1.00
0.60 0.20
0.50
0.58
Pin 1
Pin 2
Pin 3
Pin 4
GND
Nominal Dimensions in mm
Revision 02/05/2008
1
4-Line Protection
3 2: -0.062 dB
1
2
1.8 GHz
3: -0.1087 dB 2.5 GHz
100 MHz
13 GHz GHz
STOP 3000.000000 MHz
RClamp0524J
PRELIMINARY
Insertion Loss S21 - I/O to GND
CH1 S21 LOG 6 dB / REF 0 dB
Mechanical Characteristics
SLP2710P8 8-pin package (2.7 x 1.0 x 0.58mm) RoHS/WEEE Compliant Lead Pitch: 0.5mm Lead finish: NiPdAu Marking: Marking Code Packaging: Tape and Reel per EIA 481
RCLamp0508M.TBT资料
CJ(VR) / C J(V R=0)
1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4 f = 1 MHz 5
2.00
4.00
6.00
8.00
10.00
12.00
Forward Current - IF (A)
Reverse Voltage - VR (V)
Power Derating Curve
Peak Pulse Power - PPP (kW)
1
0.1
0.01 0.1 1 10 Pulse Duration - tp (µs) 100 1000
0
25
50
75
100
125
150
Ambient Temperature - TA (oC)
Pulse Waveform
30.00 Clamping Voltage -Vc (V) 25.00 20.00 15.00 10.00 5.00 0.00 0.00 Waveform Parameters: tr = 8µs td = 20µs 2.00 4.00 6.00 8.00 10.00 12.00
Percent of I
CH1 S21 LOG 20 dB/ REF 0 dB
START
.030 000 MHz
STOP 3 RT
.030 000 MHz
STOP 3 000. 000 000 MHz
2008 Semtech Corp.
4
RClamp0508M
e-t
Peak Pulse Current - Ipp (A)
Forward Voltage vs. Forward Current
1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 1 2 3 4 f = 1 MHz 5
2.00
4.00
6.00
8.00
10.00
12.00
Forward Current - IF (A)
Reverse Voltage - VR (V)
Power Derating Curve
Peak Pulse Power - PPP (kW)
1
0.1
0.01 0.1 1 10 Pulse Duration - tp (µs) 100 1000
0
25
50
75
100
125
150
Ambient Temperature - TA (oC)
Pulse Waveform
30.00 Clamping Voltage -Vc (V) 25.00 20.00 15.00 10.00 5.00 0.00 0.00 Waveform Parameters: tr = 8µs td = 20µs 2.00 4.00 6.00 8.00 10.00 12.00
Percent of I
CH1 S21 LOG 20 dB/ REF 0 dB
START
.030 000 MHz
STOP 3 RT
.030 000 MHz
STOP 3 000. 000 000 MHz
2008 Semtech Corp.
4
RClamp0508M
e-t
Peak Pulse Current - Ipp (A)
Forward Voltage vs. Forward Current
ESDR0502B中文资料(ONSEMI)中文数据手册「EasyDatasheet - 矽搜」
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIM MIN NOM MAX
ቤተ መጻሕፍቲ ባይዱ
A 0.70 0.80 0.90
A1 0.00 0.05 0.10
b 0.15 0.20 0.30
C 0.10 0.15 0.25
D 1.55 1.60 1.65
E 0.70 0.80 0.90
芯片中文手册,看全文,戳
ESDR0502B
瞬态电压抑制器
ESD保护二极管与超低
电容
该ESDR0502B旨在保护电压敏感
从因损坏部件的ESD在需要超低电容,以保持信号完整性应用.优良钳位能力,
低泄漏和快速响应时间相结合,与0.5 pF的超低二极管电容由于ESD提供
最好在从集成电路损坏类保护.小型SC-75封装,非常适合设计电路板空间非
芯片中文手册,看全文,戳
ESDR0502B
电气特性
(TA = 25°C除非另有说明）
符
参数
IPP
最大反向峰值脉冲电流
VC
钳位电压@ I
PP
VRWM IR
工作峰值反向电压
最大反向漏电流用V
RWM
VBR
击穿电压@我
T
IT
测试电流
IF
正向电流
VF
正向电压@我
F
Ppk
峰值功率耗散
C
电容用V
参见应用笔记AND8308 / D的生存能力规范的进一步说明.
3 12
SC−75 CASE 463 方式4
标记 框图
AD中号G G
1
AD
=器件代码
M
=日期代码*
MILLIMETERS
DIM MIN NOM MAX
ቤተ መጻሕፍቲ ባይዱ
A 0.70 0.80 0.90
A1 0.00 0.05 0.10
b 0.15 0.20 0.30
C 0.10 0.15 0.25
D 1.55 1.60 1.65
E 0.70 0.80 0.90
芯片中文手册,看全文,戳
ESDR0502B
瞬态电压抑制器
ESD保护二极管与超低
电容
该ESDR0502B旨在保护电压敏感
从因损坏部件的ESD在需要超低电容,以保持信号完整性应用.优良钳位能力,
低泄漏和快速响应时间相结合,与0.5 pF的超低二极管电容由于ESD提供
最好在从集成电路损坏类保护.小型SC-75封装,非常适合设计电路板空间非
芯片中文手册,看全文,戳
ESDR0502B
电气特性
(TA = 25°C除非另有说明）
符
参数
IPP
最大反向峰值脉冲电流
VC
钳位电压@ I
PP
VRWM IR
工作峰值反向电压
最大反向漏电流用V
RWM
VBR
击穿电压@我
T
IT
测试电流
IF
正向电流
VF
正向电压@我
F
Ppk
峰值功率耗散
C
电容用V
参见应用笔记AND8308 / D的生存能力规范的进一步说明.
3 12
SC−75 CASE 463 方式4
标记 框图
AD中号G G
1
AD
=器件代码
M
=日期代码*
RCLAMP0502N中文资料
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2 f = 1 MHz
0
0
1
2
3
4
5
6
7
Reverse Voltage - VR (V)
CJ(VR) / CJ(VR=0)
CJ(VR) / CJ(VR=0)
Forward Voltage - VF V)
% of Rated Power or IPP
RClamp0502N
40
35
30
25
20
15
Waveform
10
Parameters:
tr = 8μs
5
td = 20μs
0
0
0.5
1
1.5
2
2.5
3
3.5
4
Peak Pulse Current - IPP (A)
Normalize Capacitance vs. Reverse Voltage I/O to Gnd - Pin 4, 5 to Pin 1
Forward Voltage
VF
If = 15mA
Any I/O to pin 6
Clamping Voltage
VC
IPP = 1A, tp = 8/20μs
Any I/O pin to Ground
Clamping Voltage
VC
IPP = 3A, tp = 8/20μs
Any I/O pin to Ground
RClamp0502N
RailClamp® Low Capacitance TVS Diode Array
RCLAMP0521P中文资料
Ultra-small package (1.0 x 0.6 x 0.5mm) Protects one data or I/O line Low capacitance: 0.5pF Low clamping voltage Low operating voltage: 5.0V Solid-state silicon-avalanche technology
Typical 9.3
Maximum 5 11
Units V V
0.025
1
µA
15
V
25
V
0.30
0.50
pF
2007 Semtech Corp.
2
元器件交易网
RClamp0521P
Clamping Voltage - VC (V)
PROTECTION PRODUCTS Typical Characteristics
I/O Line
RClamp0521P
RClamp0521P Spice Model
Parameter IS BV VJ RS IBV CJO TT M N EG
RClamp0521P Spice Parameters
Unit
Rating Peak Pulse Power (tp = 8/20µs) Peak Pulse Current (tp = 8/20µs) ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) Operating Temperature Storage Temperature
ground loops. z The ESD transient return path to ground should be
Typical 9.3
Maximum 5 11
Units V V
0.025
1
µA
15
V
25
V
0.30
0.50
pF
2007 Semtech Corp.
2
元器件交易网
RClamp0521P
Clamping Voltage - VC (V)
PROTECTION PRODUCTS Typical Characteristics
I/O Line
RClamp0521P
RClamp0521P Spice Model
Parameter IS BV VJ RS IBV CJO TT M N EG
RClamp0521P Spice Parameters
Unit
Rating Peak Pulse Power (tp = 8/20µs) Peak Pulse Current (tp = 8/20µs) ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) Operating Temperature Storage Temperature
ground loops. z The ESD transient return path to ground should be
RCLAMP0502B中文资料
Reverse Leakage Current
Clamping Voltage Clamping Voltage Clamping Voltage Junction Capacitance Junction Capacitance
Symbol V
RWM
VBR
IR
VC VC VC Cj Cj
Conditions
Pin 1 or Pin 2 to Pin 3 and Between Pins 1 and 2
It =1mA Pin 1 or Pin 2 to Pin 3 and Between Pins 1 and 2
VRWM = 5V, T=25°C Pin 1 or Pin 2 to Pin 3 and Between Pins 1 and 2
ESD Response (4kV Contact per IEC 61000-4-2)
RClamp0502B
Insertion Loss S21 (Pin 1 or Pin 2 to Pin 3)
CH1 S21 LOG 6 dB / REF 0 dB
0 dB -6 dB
1: .00460 dB 900 MHz
Applications
High-Definition Multimedia Interface (HDMI) Mobile Display Digital Interface (MDDI) RF/Antenna Circuits USB 2.0 & Firewire Ports GaAs Photodetector Protection HBT Power Amp Protection Infiniband Transceiver Protection
Clamping Voltage Clamping Voltage Clamping Voltage Junction Capacitance Junction Capacitance
Symbol V
RWM
VBR
IR
VC VC VC Cj Cj
Conditions
Pin 1 or Pin 2 to Pin 3 and Between Pins 1 and 2
It =1mA Pin 1 or Pin 2 to Pin 3 and Between Pins 1 and 2
VRWM = 5V, T=25°C Pin 1 or Pin 2 to Pin 3 and Between Pins 1 and 2
ESD Response (4kV Contact per IEC 61000-4-2)
RClamp0502B
Insertion Loss S21 (Pin 1 or Pin 2 to Pin 3)
CH1 S21 LOG 6 dB / REF 0 dB
0 dB -6 dB
1: .00460 dB 900 MHz
Applications
High-Definition Multimedia Interface (HDMI) Mobile Display Digital Interface (MDDI) RF/Antenna Circuits USB 2.0 & Firewire Ports GaAs Photodetector Protection HBT Power Amp Protection Infiniband Transceiver Protection
ITR9606中文资料
160
140
2
120
100 80
60
40
20
0 0 10 20 30 40 50 60 70
Fig.5 Collector Dark Current vs.
Ambient Temperature
10
10 10
10
10
0
25
50 75 100
Fig.4 Collector Current vs. Irradiance
1.3
1.2 IF=20mA
1.1
Ie-Radiant Intensity (mW/sr)
0 25 50 75 100 120
1 25 50 75 100 120
Everlight Electronics Co., Ltd. Device No：CDRX-096-004
http:\\ Prepared date：08-08-2005
http:\\ Prepared date：08-08-2005
Rev 3
Page: 3 of 6
Prepared by：Denky
元器件交易网
█ Typical Electrical/Optical/Characteristics Curves for IR
--- --- 10 μA
VR=5V
--- 940 --- nm
IF=20mA
--- 60 --- Deg
IF=20mA
--- --- 100 nA VCE=20V,Ee=0mW/cm2
VCE(sat) --- --- 0.4 V
IC=2mA ,Ee=1mW/cm2
Collect Current Transfer
2SC3526H资料
1 2 3 0.45+0.2 –0.1 (1.27) (1.27) 0.45+0.2 –0.1
13.5±0.5
2.54±0.15
0.7+0.3 –0.2
0.7±0.1
8.6±0.2
■ Features
1: Emitter 2: Collector 3: Base EIAJ: SC-51 TO-92L-A1 Package
2
SJC00133BED
元器件交易网
Request for your special attention and precautions in using the technical information and semiconductors described in this material
1
元器件交易网
2SC3526H
PC Ta
1.6
240
IC VCE
Ta = 25°C IB = 5.0 mA 4.5 mA 160 4.0 mA 3.5 mA 120 3.0 mA 2.5 mA 80 2.0 mA 1.5 mA 40 1.0 mA 0.5 mA
120
IC VBE
VCE = 5 V 25°C Ta = 75°C −25°C
Collector power dissipation PC (W)
200
100
Collector current IC (mA)
1.2
Collector current IC (mA)
80
0.8
60
40
0.4
20
0
0
40
80
100 IC / IB = 10
hFE IC
13.5±0.5
2.54±0.15
0.7+0.3 –0.2
0.7±0.1
8.6±0.2
■ Features
1: Emitter 2: Collector 3: Base EIAJ: SC-51 TO-92L-A1 Package
2
SJC00133BED
元器件交易网
Request for your special attention and precautions in using the technical information and semiconductors described in this material
1
元器件交易网
2SC3526H
PC Ta
1.6
240
IC VCE
Ta = 25°C IB = 5.0 mA 4.5 mA 160 4.0 mA 3.5 mA 120 3.0 mA 2.5 mA 80 2.0 mA 1.5 mA 40 1.0 mA 0.5 mA
120
IC VBE
VCE = 5 V 25°C Ta = 75°C −25°C
Collector power dissipation PC (W)
200
100
Collector current IC (mA)
1.2
Collector current IC (mA)
80
0.8
60
40
0.4
20
0
0
40
80
100 IC / IB = 10
hFE IC
RF501B2S资料
Part No. RF071M2S RF101L2S RF301B2S RF501B2S RF601B2D RF601T2D RF1001T2D RF1601T2D RF2001T2D IO 0.7A 1A 3A 5A 6A 6A 10A 16A 20A VR 200V 200V 200V 200V 200V 200V 200V 200V 200V Max. 0.850V 0.870V 0.930V 0.930V 0.930V 0.930V 0.930V 0.930V 0.930V VF Typ. 0.790V 0.815V 0.870V 0.870V 0.870V 0.870V 0.870V 0.870V 0.870V IR IF 0.7A 1A 3A 5A 3A 3A 5A 8A 10A Max. 10µA 10µA 10µA 10µA 10µA 10µA 10µA 10µA 10µA Typ. 10nA 10nA 10nA 10nA 10nA 10nA 10nA 10nA 10nA Max. 25ns 25ns 25ns 30ns 25ns 25ns 30ns 30ns 30ns trr Typ. 12ns 12ns 14ns 15ns 14ns 14ns 15ns 18ns 20ns Configurate Single Single Cathode common Single Cathode common Cathode common Cathode common Cathode common Cathode common Package PMDU PMDS CPD(D-pack) CPD(D-pack) CPD(D-pack) TO-220FN TO-220FN TO-220FN TO-220FN
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2/2
元器件交易网
HEF4050BT中文资料
Conditions
VDD
Extrapolation formula
tPHL
HIGH to LOW
nA to nY;
5 V [1] 26 ns + (0.18 ns/pF)CL
propagation delay see Figure 5 10 V
16 ns + (0.08 ns/pF)CL
IDD
supply current
IO = 0 A
CI
input capacitance
11. Dynamic characteristics
5V 10 V 15 V
5V 10 V 15 V
5V 10 V 15 V
5V 10 V 15 V
5V 5V 10 V 15 V 4.75 V 10 15 V 15 V 5V 10 V 15 V
6.2 Pin description
Table 2. Symbol VDD 1Y to 6Y
Pin description Pin 1 2, 4, 6, 10, 12, 15
Description supply voltage output
HEF4050B_5
Product data sheet
Rev. 05 — 11 November 2008
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NXP Semiconductors
HEF4050B
Hex non-inverting buffers
10. Static characteristics
Table 6. Static characteristics VSS = 0 V; VI = VSS or VDD unless otherwise specified.
RCLAMP0504F中文资料
tr = 8µs td = 20µs
e-t
td = IPP/2
5
10
15
20
25
30
Time (µs)
Forward Voltage vs. peak Pulse Current
8
7
6
5
4
3
Waveform
2
Parameters:
tr = 8µs
1
td = 20µs
0
0
1
2
3
4
5
6
Peak Pulse Current - IPP (A)
25
V
3
pF
1.5
pF
© 2008 Semtech Corp.
2
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PROTECTION PRODUCTS Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
IPP = 6A, tp = 8/20μs Any pin to pin 2
VR = 0V, f = 1MHz Any I/O pin to pin 2
V = 0V, f = 1MHz R
Between I/O pins
Minimum 6
Typical
Maximum 5
Units V V
3
μA
15
V
RClamp0504F
Insertion Loss S21 (I/O to I/O)
CH1 S21 LOG 6 dB / REF 0 dB
START. 030 MHz
STOP 3000.000000 MHz
e-t
td = IPP/2
5
10
15
20
25
30
Time (µs)
Forward Voltage vs. peak Pulse Current
8
7
6
5
4
3
Waveform
2
Parameters:
tr = 8µs
1
td = 20µs
0
0
1
2
3
4
5
6
Peak Pulse Current - IPP (A)
25
V
3
pF
1.5
pF
© 2008 Semtech Corp.
2
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PROTECTION PRODUCTS Typical Characteristics
Non-Repetitive Peak Pulse Power vs. Pulse Time
IPP = 6A, tp = 8/20μs Any pin to pin 2
VR = 0V, f = 1MHz Any I/O pin to pin 2
V = 0V, f = 1MHz R
Between I/O pins
Minimum 6
Typical
Maximum 5
Units V V
3
μA
15
V
RClamp0504F
Insertion Loss S21 (I/O to I/O)
CH1 S21 LOG 6 dB / REF 0 dB
START. 030 MHz
STOP 3000.000000 MHz
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1.4 1.2
1 0.8 0.6 0.4 0.2
0 0
f = 1 MHz
1
2
3
4
5
Reverse Voltage - VR (V)
Normalized Capacitance - Cj
1.2 1
0.8 0.6 0.4 0.2
0
2005 Semtech Corp.
3
f = 1 MHz
1
2
3
4
5
Reverse Voltage - VR (V)
2: .02010 dB 1.8 GHz
3: -.08180 dB 2.5 GHz
3
1
2
-12 dB -18 dB
-24 dB
-30 dB
-36 dB
1 MHz
START. 030 MHz
10 MHz
100 MHz
13 GHz GHz
STOP 3000.000000 MHz
ESD Response (8kV Contact per IEC 61000-4-2)
Applications
High-Definition Multimedia Interface (HDMI) Mobile Display Digital Interface (MDDI) RF/Antenna Circuits USB 2.0 & Firewire Ports GaAs Photodetector Protection HBT Power Amp Protection Infiniband Transceiver Protection
25
20
15
10
5
0 0
Waveform Parameters:
tr = 8µs td = 20µs
1
2
3
4
5
6
Peak Pulse Current - IPP (A)
Normalized Capacitance vs. Reverse Voltage Pin 1 or Pin 2 to Pin 3
ESD Response (4kV Contact per IEC 61000-4-2)
RClamp0502B
Insertion Loss S21 (Pin 1 or Pin 2 to Pin 3)
CH1 S21 LOG 6 dB / REF 0 dB
0 dB -6 dB
1: .00460 dB 900 MHz
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PROTECTION PRODUCTS Absolute Maximum Rating
Rating Peak Pulse Power (tp = 8/20µs) Peak Pulse Current (tp = 8/20µs) ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) Operating Temperature Storage Temperature
Non-Repetitive Peak Pulse Power vs. Pulse Time
10
Peak Pulse Power - PPP (kW)
1
0.1
Clamping Voltage - VC (V)
0.01 0.1
1
10
100
Pulse Duration - tp (µs)
1000
Clamping Voltage vs. Peak Pulse Current Pin 1 to Pin 2
-12 dB -18 dB
-24 dB
-30 dB
-36 dB
1 MHz
START. 030 MHz
10 MHz
1: .03430 dB 900 MHz
2: .07870 dB 1.8 GHz
3: .28040 dB 2.5 GHz
3
1
2
100 MHz
13 GHz GHz
STOP 3000.000000 MHz
Minimum 6
Typical
Maximum 5
Units V
Vቤተ መጻሕፍቲ ባይዱ
1
µA
15
V
22
V
25
V
0.60
0.9
pF
1.2
pF
2005 Semtech Corp.
2
元器件交易网
RClamp0502B
PROTECTION PRODUCTS Typical Characteristics
% of Rated Power or IPP
Clamping Voltage - VC (V)
Power Derating Curve
110 100
90 80 70 60 50 40 30 20 10
0 0
25
50
75
100
125
150
Ambient Temperature - TA (oC)
Clamping Voltage vs. Peak Pulse Current Pin 1 or Pin 2 to Pin 3
RClamp0502B
Ultra-Low Capacitance TVS for ESD and CDE Protection
Features
Transient protection for high-speed data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns)
20
18
16
14
12
10
8
6
Waveform
4
Parameters: tr = 8µs
2
td = 20µs
0
0
1
2
3
4
5
6
Peak Pulse Current - IPP (A)
Normalized Capacitance vs. Reverse Voltage Pin 1 to Pin 2
NormalizedCapacitance - Cj
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PROTECTION PRODUCTS - RailClamp Description
RailClamps are ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been specifically designed to protect sensitive components which are connected to high-speed data and transmission lines from overvoltage caused by ESD (electrostatic discharge), CDE (Cable Discharge Events), and EFT (electrical fast transients). The RClampTM0502B has a typical capacitance of only 0.50pF (pin 1 to 2). This means it can be used on circuits operating in excess of 3GHz without signal attenuation. They may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). Each device can be configured to protect 1 bidirectional line or two unidirectional lines. These devices are in a small SC-75 (SOT-523) package and feature a lead-free, matte tin finish. They are compatible with both lead free and SnPb assembly techniques. They are designed for use in applications where board space is at a premium. The combination of small size, low capacitance, and high level of ESD protection makes them a flexible solution for applications such as HDMI, MDDI, antenna circuits, Automatic Test Equipment, USB 2.0, and Infiniband circuits.
IPP = 1A, tp = 8/20µs Pin 1 to Pin 2
IPP = 5A, tp = 8/20µs Pin 1 or Pin 2 to Pin 3
IPP = 5A, tp = 8/20µs Pin 1 to Pin 2
VR = 0V, f = 1MHz Pin 1 to Pin 2
VR = 0V, f = 1MHz Pin 1 or Pin 2 to Pin 3
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PROTECTION PRODUCTS Typical Characteristics