2SC3120_07中文资料
2SA2004中文资料
Collector-emitter cutoff current (Base open) Forward current transfer ratio
vi
si
VCE = −2V, IC = − 0.1 A VCE = −2 V, IC = −5 V IC = −5 A, IB = − 0.25 A IC = −5 A, IB = − 0.25 A IC = −4 A
at io n.
Max −100 −100 230 −1.2 −1.7 0.5 0.15 1.0
Unit V µA µA V V µs µs µs
Publication date: January 2003
SJD00009CED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
• High forward current transfer ratio hFE • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: > 5 kV • High−speed switching
at io n.
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: – Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. – Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
OP07中文资料_数据手册_参数
绝对大额定值超过工作自由空气温度范围(除非另有说明) (1) MIN MAX单元 V CC + (2) 0 22电源电压 V V CC- (2) -22 0 差 分输入电压 (3) ±30 V V 我 输入电压范围(任一输入) (4) ±22 V 输出短路持续时间 (5)无限 T J操作虚拟结温度 150 C引线温 度距离壳体1.6毫米(1/16英寸),持续10秒 260 C (1)强调绝对大额定值以外列出的可能会导致设备永久性损坏.这些是压力评级只 有在这些或任何其他超出建议的操作条件下的条件下才能操作设备不暗示条件.暴露在绝对大额定条件下可能会影响器件的可靠性. (2) 除非另有说明,所有的电压值都是相对于V CC + 和V CC- 之间的中点 . (3)差分电压相对于IN处于IN + - . (4)输入电压的 大小决不能超过电源电压的大小或15 V,取其小者. (5)输出可能短路到地或任何一个电源. 7.2处理评级参数定义 MIN MAX单元 T STG存储温度范围 -65 150 C人体模型(HBM),根据ANSI / ESDA / JEDEC JS-001,全部 0 1000 (1)静电的 V (ESD) V卸货带电器 件型号(CDM),根据JEDEC规范JESD22- 0 1000 C101,所有引脚 (2) (1) JEDEC文件JEP??155指出,500V HBM允许采用标准 ESD控制过程进行安全制造. (2) JEDEC文件JEP??157指出,250V CDM允许使用标准ESD控制过程进行安全制造. 7.3推荐的操作条件 超过工作自由空气温度范围(除非另有说明) MIN MAX单元 V CC + 3 18电源电压 V CC- -3 -18 V V IC共模输入电压 V CC± =±15 V -13 13 T A.操作自由空气温度 0 70 C 7.4热量信息 温度计 (1) D P单元 RθJA结到环境热阻 97 85 °C / W (1)有关传统和新型散热指 标的更多信息 OP07Y精密运算放大器 SLOS099B - 1983年10月 - 修订于1996年8月五邮政信箱655303 ? 达拉斯,得克萨斯州75265 经营特色,V CC ±= ± 15 V,T A = 25°C参数测试 OP07C OP07D单元参数条件? MIN TYP MAX MIN TYP MAX单元 F = 10HZ 10.5 10.5 √ VN等效输入噪 声电压 F = 100HZ 10.2 10.3内华达州/ √HZ的 F = 1KHZ 9.8 9.8 VN(PP)峰峰值等效输入噪声电压 F = 0.1HZ至10HZ 0.38 0.38 μV F = 10HZ 0.35 0.35 √在等效输入噪声电流 F = 100HZ 0.15 0.15 PA / √HZ的 F = 1KHZ 0.13 0.13 IN(PP)峰峰值等效输入噪声电流 F = 0.1HZ 至10HZ 15 15 PA的 SR摆率 RL≥2KΩ 0.3 0.3 V /微秒 ?除非另有说明,所有特性均在开环条件下以零共模输入电压进行测量. 电气特 性,V CC ±= ± 15 V,T A = 25°C(除非另有说明)参数测试条件? OP07Y单元参数测试条件? MIN TYP MAX单元 VIO输入失调电 压 RS = 50Ω 60 150 μV输入失调电压的长期漂移见注6 0.5 μV/月偏移调整范围 RS = 20KΩ,见图1 ±4毫伏 IIO输入失调电流 0.8 6 NA 的 IIB输入偏置电流 ±2 ±12 NA的 VICR共模输入电压范围 ±13 ±14 V RL≤10KΩ ±12 ±13 VOM峰值输出电压 RL≤2KΩ ±11.5 ±12.8 V RL≤1KΩ ±12 AVD大信号L≤500KΩ 400 AVD大信号差分电压放大 VO = ±10 V, RL = 2KΩ 120 400 B1单位增益带宽 0.4 0.6兆赫 RI输入电阻 7 31中号 Ω CMRR共模输入电阻 VIC =±13 V, RS = 50Ω 94 110 D B KSVS电源电压抑制比( ΔVCC/ΔVIO) VCC ±=±3 V至±18 V, RS = 50Ω 7 32 μV/ V PD功
2SK1522中文资料(renesas)中文数据手册「EasyDatasheet - 矽搜」
7.如果这些产品或技术受日本出口管理限制,必须是 日本政府根据许可证出口,不能导入比批准目地以外国家.
禁止任何转移或再出口违反出口管制法律和日本及/或目地国家相关规定.
8.请与瑞萨科技公司对这些材料或产品进一步详情 其中所载.
芯片中文手册,看全文,戳
V GS = ±25 V, V DS = 0 V DS = 360 V, V GS = 0 V DS = 400 V, V GS = 0 ID =1毫安,V DS = 10 V ID = 25 A, V GS = 10 V * 1
ID = 25 A, V DS = 10 V * 1 VDS = 10 V, V GS = 0, F = 1兆赫
芯片中文手册,看全文,戳
2SK1521, 2SK1522
绝对最大额定值
(Ta = 25°C)
项目
漏极至源极电压
2SK1521
2SK1522
门源电压
漏极电流
漏电流峰值
身体流失二极管反向漏电流
频道耗散
通道温度
储存温度
注:1.PW
10 µs, 占空比
1%
2.价值在T C = 25°C
符号
ID = 25 A, V GS = 10 V, RL = 1.2
IF = 50 A, V GS = 0
IF = 50 A, V GS = 0, di F/ DT = 100 A /μs的
3
—
远期转移导纳
|yfs|
22
输入电容
Ciss —
输出电容
Coss —
反向传输电容
Crss —
导通延迟时间 上升时间 关断延迟时间 下降时间 身体向前漏二极管 电压
2SJ107_07中文资料
VGDS IG PD Tj Tstg
25
V
−10
mA
200
mW
125
°C
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
⎪Yfs⎪
12
30
⎯
mS
(Note 2)
Ciss Crss
VDS = −10 V, VGS = 0, f = 1 MHz VGD = 10 V, ID = 0, f = 1 MHz
⎯ 105 ⎯
pF
⎯
32
⎯
pF
RDS (ON) VDS = −10 mV, VGS = 0
(Note 2) ⎯
40
⎯
Ω
Note 1: IDSS classification GR: −2.6~−6.5 mA, BL: −6~−12 mA, V: −10~−20 mA Note 2: Condition of the typical value IDSS = −5 mA
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance Reverse transfer capacitance Drain-source ON resistance
IGSS
VGS = 25 V, VDS = 0
Absolute Maximum Ratings (Ta = 25°C)
OP07C中文资料
OP07C中文资料一、Op07芯片是一种低噪声,非斩波稳零的单运算放大器集成电路。
由于OP07具有非常低的输入失调电压(对于OP07A最大为25μV),所以OP07在很多应用场合不需要额外的调零措施。
OP07同时具有输入偏置电流低(OP07A为±2nA)和开环增益高(对于OP07A 为300V/mV)的特点,这种低失调、高开环增益的特性使得OP07特别适用于高增益的测量设备和放大传感器的微弱信号等方面。
二、OP07特点:超低偏移: 150μV最大。
低输入偏置电流: 1.8nA 。
低失调电压漂移: 0.5μV/℃。
超稳定,时间: 2μV/month最大高电源电压范围:±3V至±22V三、OP07内部结构原理图四、OP07芯片引脚功能说明:1和8为偏置平衡(调零端),2为反向输入端,3为正向输入端,4接地,5空脚 6为输出,7接电源+ABSOLUTE MAXIMUM RATINGS 最大额定值五、OP07典型应用电路图4 输入失调电压调零电路图5 典型的偏置电压试验电路图6 老化电路图7 典型的低频噪声放大电路图8 高速综合放大器图9 选择偏移零电路图10 调整精度放大器图11高稳定性的热电偶放大器图12 精密绝对值电路op07的功能介绍:Op07芯片是一种低噪声,非斩波稳零的双极性运算放大器集成电路。
由于OP07具有非常低的输入失调电压(对于OP07A 最大为25μV),所以OP07在很多应用场合不需要额外的调零措施。
OP07同时具有输入偏置电流低(OP07A为±2nA)和开环增益高(对于OP07A为300V/mV)的特点,这种低失调、高开环增益的特性使得OP07特别适用于高增益的测量设备和放大传感器的微弱信号等方面。
特点:超低偏移: 150μV最大。
低输入偏置电流: 1.8nA 。
低失调电压漂移: 0.5μV/℃。
超稳定,时间: 2μV/month最大高电源电压范围:±3V至±22V工作电源电压范围是±3V~±18V;OP07完全可以用单电源供电,你说的+5V,-5V绝对没有问题,用单+5V也可以供电,但是线性区间太小,单电源供电,模拟地在1/2 VCC. 建议电源最好>8V,否则线性区实在太小,放大倍数无法做大,一不小心,就充顶饱和了。
2SC5071中文资料
Weight : Approx 6.0g a. Type No. b. Lot No.
I C – V CE Characteristics (Typical)
12
V CE (sat),V BE (sat) – I C Temperature Characteristics (Typical)
(I C /I B =5) Collector-Emitter Saturation Voltage V C E (s at) (V ) Base-Emitter Saturation Voltage V B E (s at) (V)
VCC (V) 200 RL (Ω) 28.5 IC (A) 7 VBB1 (V) 10 VBB2 (V) –5 IB1 (A) 0.7 IB2 (A) –1.4 ton (µs) 1.0max tstg (µs) 3.0max tf (µs) 0.5max
5.45±0.1 B C E
5.45±0.1
10 Co lle ctor Cu rren t I C (A) Collector Curr ent I C (A) 5
10 5
M aximum Power Dissipa ti on P C (W)
W ith In fin ite he
50
at si nk
1 0.5 Without Heatsink Natural Cooling
12
12
5˚
C
2
–55˚C
5˚
5˚C
C
(C
(Cas
(Ca
e Te
Te
200mA
Collector-Emitter Voltage V C E (V)
C1227中文资料
–0.6 0.50 25.0 1.50 0.40 –18 Typical 1.439 0.046 0.050 Typical 140 34 1.89
–0.4 0.65 30.0 1.65
Maximum 1.569 0.052 0.057 Maximum 240
Comments
Comments 4.5x4.5µm
© IMP, Inc.
71
元器件交易网
Process C1227
Physical Characteristics
Diffusion & Thin Films Symbol Starting Material p<100> ρN-well(f) Well(field)Sheet Resistance ρN+ N+ Sheet Resistance N+ Junction Depth xjN+ ρP+ P+ Sheet Resistance P+ Junction Depth xjP+ Base Resistance RSHB_RB High-Voltage Gate Oxide HTGOX Gate Oxide Thickness TGOX Interpoly Oxide Thickness IPOX ρPOLY1 Gate Poly Sheet Resistance Poly2 Resistivity RSH_PL P ρM1 Metal-1 Sheet Resistance ρM2 Metal-2 Sheet Resistance Passivation Thickness TPASS Minimum 1.5 20.0 50.0 1.33 Typical 2.1 35.0 0.4 75.0 0.4 1.66 22 22 42 22.0 2 45.0 25.0 200+900 Maximum 2.7 50.0 100.0 2.00 Unit KΩ/ Ω/ µm Ω/ µm KΩ/sq nm nm nm Ω/ kΩ/ mΩ/ mΩ/ nm Comments n-well
2SA2013中文资料(ONSEMI)中文数据手册「EasyDatasheet - 矽搜」
Unit µA µA MHz
200 (360)400
本文描述或包含没有规范,能够处理应用需要极高的可靠性,如生命支持系统,飞机的控制系统或其他应用程序的 故障可合理预期会导致严重的身体任何及所有SANYO产品和/或财产损失.使用任何SANYO产品中,在此类应用中描述或包 含前与您的SANYO代表就近请教.
芯片中文手册,看全文,戳
订购数量: ENN6307B
2SA2013 / 2SC5566
2SA2013 / 2SC5566 DC / DC转换器应用
应用
•
PNP / NPN外延平面硅晶体管
继电器驱动器,灯驱动器,电机驱动器,闪存.
特征
• • • • • •
采用FBET和MBIT过程. 高电流容量. 低集电极 - 发射极饱和电压. 高速切换. 超小型封装facilitales 小型化的终端产品. 高允许功耗.
4
IC - VCE
mA 70 mA 80 90mA 100mA A 60m 50mA 40mA 30mA 20mA 10mA
--3
3
--2 集电极电流,IC - 一个 --1
2
--10mA
集电极电流,IC - 一个 1
0
IB=0mA
0 --0.4 --0.8 --1.2 集电极 - 发射极电压VCE - V --1.6 --2.0 IT00152
--25° C
5°C Ta=7 25°C
饱和电压 )° -C 毫伏 10 ,VCE(SAT --25 7 5 3 2 1.0 0.01 2 3 5 7 0.1
°C a=75 T 25°C
2 3
5 7 1.0
2
3
集电极电流,IC - 一个 10000 7 5 3 2 1000 7 5 集电极 - 发射极 3 2 100 ,VCE(SAT) - 毫伏 饱和电压 7 ° Ta=75 C 5
2SJ103_07中文资料
4
2007-11-01
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
UnitΒιβλιοθήκη Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
2SJ103
3
2007-11-01
元器件交易网
2SJ103
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
20070701-EN GENERAL
JEDEC
TO-92
temperature, etc.) may cause this product to decrease in the
JEITA
SC-43
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-5F1C
absolute maximum ratings. Please design the appropriate reliability upon reviewing the
Weight: 0.21 g (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
2SA1020中文资料(secos)中文数据手册「EasyDatasheet - 矽搜」
1.60 Max
E 0.35 0.65 M 0.00 0.40
F 0.30 0.51 N
4.00 Min
G
1.50 TYP.
(T = 25°C除非另有说明)
符号 V V V I P
T ,T
额定值
-50 -50 -5 -2 900 150, -55~150
单元
V V V A mW °C
(T = 25°C除非另有说明)
31日 - 12月2010修订版B
基地
发射器
REF.
Millimeter Min. Max.
REF.
Millimeter Min. Max.
A 5.50 6.50 H 1.70 2.05
B 8.00 9.00 J 2.70 3.20
C 12.70 14.50 K 0.85 1.15
D 4.50 5.30 L
符号
V V V
I I h h V V f C T T T
Min. Typ.
-50
-
-50
-
-5
-
-
-
-
-
70
-
40
-
-
-
-
-
-
100
-
40
-
0.1
-
1
-
0.1
Max.
-1 -1 240 -0.5 -1.2 -
单元 V V V μA μA
V V MHz pF
μs
测试条件
I = -100μA, I = 0A I = -10mA, I = 0A I = -100μA, I = 0A V = -50 V, I = 0 A V = -5 V, I = 0 A V = -2V, I = -0.5A V = -2V, I = -1.5A I = -1A, I = -50mA I = -1A, I = -50mA V = -2V, I = -500mA V = -10V, I = 0 A, f=1MHz V = -30V I = -I = -0.05A I = -1A
THS3120中文资料
(1) This data was taken using the JEDEC standard low-K test PCB. For the JEDEC proposed high-K test PCB, the ΘJA is 95°C/W with power rating at TA = 25°C of 1.05 W.
FEATURES
• Low Noise – 1 pA/√Hz Noninverting Current Noise – 10 pA/√Hz Inverting Current Noise – 2.5 nV/√Hz Voltage Noise
• High Output Current Drive: 475 mA • High Slew Rate: 1700 V/µs (RL = 50 Ω,
AVAILABLE OPTIONS
TA 0°C to 70°C -40°C to 85°C 0°C to 70°C -40°C to 85°C
PLASTIC SMALL OUTLINE SOIC (D) THS3120CD THS3120CDR THS3120ID THS3120IDR THS3121CD THS3121CDR THS3121ID THS3121IDR
Note: The device with the power down option defaults to the ON state if no signal is applied to the PD pin. Additionallly, the REF pin functional range is from VS− to (VS+ − 4 V).
MIN
NOM
MAX
C5027器件资料
KSC5027KSC5027TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.ACEx™Bottomless™CoolFET™CROSSVOLT™E2CMOS™FACT™FACT Quiet Series™FAST®FASTr™GTO™HiSeC™ISOPLANAR™MICROWIRE™POP™PowerTrench®QFET™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™UHC™VCX™DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance Information Formative or InDesign This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.。
ISOCOM COMPONENTS ICPL3120 光电隔离驱动器说明书
DESCRIPTIONThe ICPL3120 consists of an Infrared Light Emitting Diode optically coupled to an Integrated Circuit with a Power Driving Output. ICPL3120 is ideally suitable to drive the Power IGBT and MOSFET in Inverters of Motor Controls and in Power Supplies.The 2.5A peak output current is capable to direct drive IGBT/MOSFET up to ratings of 1200V/100A. For IGBTs with higher ratings, ICPL3120 can be used to drive a discrete power stage which drives the IGBT gate.FEATURES• ±2.5A Maximum Peak Output Current• 35kV/μs Minimum Common Mode Rejection at V CM 1500V• Maximum Propagation Delay 500ns• Maximum Propagation Delay Difference 100ns • Wide Operating Voltage Range V CC 15 to 30 V• Maximum Supply Current I CC 3.5mA• Under Voltage Lock Out (UVLO) Protection with Hysteresis• Guaranteed Performance over Temperature Range - 40°C to +105°C • MSL 1• Lead Free and RoHS Compliant • Safety Approvals PendingAPPLICATIONS• IGBT/MOSFET Gate Drive • UPS • Inverters• AC Brushless and DC Motor DrivesORDER INFORMATION• Add G after PN for 10mm lead spacing • Add SM after PN for Surface Mount•Add SMT&R after PN for Surface Mount Tape & ReelISOCOM COMPONENTS 2004 LTDUnit 25B, Park View Road West, Park View Industrial EstateHartlepool, Cleveland, TS25 1PE, United Kingdom Tel : +44 (0)1429 863 609 Fax : +44 (0)1429 863 581e-mail:***************.ukISOCOM COMPONENTS ASIA LTDHong Kong Office,Block A, 8/F, Wah Hing Industrial mansion,36 Tai Yau Street, San Po Kong, Kowloon, Hong Kong.Tel : +852 2995 9217 Fax : +852 8161 6292e-mail:****************.hkA 0.1μF bypass Capacitor must be connected between Pins 8 and 5. InputForward Current20mA Forward Current Rise / Fall Time500ns Power dissipation 45mW Reverse Voltage 5V Forward Peak Current (Pulse Width ≤ 1μs, 300pps) 1A Output Peak Output Current(Exponential waveform,Pulse Width ≤ 0.3μs, f ≤ = 15kHz)±2.5A Operating Frequency(Exponential waveform,I O(Peak) ≤ l2.5Al, Pulse Width ≤ 0.3μs) 50kHzSupply Voltage (V CC ‒ V EE )0V to 35V Output Voltage 0V to V CCPower Dissipation 250mW Isolation Voltage 5000V RMS Total Power Dissipation 295mW Operating Temperature -40 to 105 °C Storage Temperature -55 to 125 °C Lead Soldering Temperature (10s)260°C Total Package 1 NC2 Anode3 Cathode4 NC5 GND (V EE )6 V O7 V O8 V CCABSOLUTE MAXIMUM RATINGS (T A = 25°C)Stresses exceeding the absolute maximum ratings can cause permanent damage to the device.Exposure to absolute maximum ratings for long periods of time can adversely affect reliability.LEDV CC V EE(Turn ON, +ve going)V CC V EE(Turn OFF –ve going)V OOFF 030V 0 30V LOWON 011.0V 0 9.5V LOWTruth TableON 11.013.5V 9.5 12.0V TRANSITIONON 13.530V 12 30V HIGHParameter Symbol Min Max Unit Operating Temperature T A - 40 105 °CSupply Voltage V CC V EE 15 30 V Input Current (ON) I F(ON) 7 16 mA Input Voltage (OFF) V F(OFF) 0 0.8 V Recommended Operating ConditionsELECTRICAL CHARACTERISTICS (Typical Values at V CC V EE = 30V and T A = 25°C,Minimum and Maximum Values at Recommended Operating Conditions, unless otherwise specified)Parameter Symbol Test Condition Min Typ. Max UnitHigh Level Supply Current I CCH I F = 10mA, V CC = 30VV O = Open 2.4 3.5 mA Low Level Supply Current I CCL I F = 0mA, V CC = 30VV O = Open 2.5 3.5 mAHigh LevelOutput CurrentI OH Maximum Pulse Width = 50μsV O = V CC – 1.5V -1.0 AMaximum Pulse Width = 10μsV O = V CC – 4V -2.5 Low Level Output CurrentI OL Maximum Pulse Width = 50μsV O = V EE + 1.5V 1.0 AMaximum Pulse Width = 10μsV O = V EE + 4V 2.5 High Level Output Voltage V OH I F = 10mA, I O = -100mAV CC 0.3V CC 0.1V Low Level Output Voltage V OL I F = 0mA, I O = 100mA V EE +0.1 V EE +0.25 VUVLO ThresholdV UVLO+ V O > 5V, I F = 10mA 11.0 12.7 13.5 VV UVLO-V O < 5V, I F = 10mA9.511.212.0VUVLO Hysteresis UVLO HYS 1.5 VOUTPUT Parameter Symbol Test Condition Min Typ. Max UnitForward Voltage V FI F = 10mA1.2 1.37 1.8 V Forward Voltage TemperatureCoefficient ΔV F /ΔT I F = 10mA1.237mV/°CReverse Voltage V R I R = 10μA 5 V Input Threshold Current (Low to High) I FLH V CC = 30V V O > 5V 1.8 5 mA Input Threshold Voltage (High to Low) V FHL V CC = 30V V O < 5V 0.8 V Input CapacitanceC INV F = 0V, f = 1MHz33pFINPUTELECTRICAL CHARACTERISTICS (Typical Values at V CC V EE = 30V and T A = 25°C,Minimum and Maximum Values at Recommended Operating Conditions, unless otherwise specified)Parameter Symbol Test Condition Min Typ. Max UnitPropagation Delay Time to High Output Level t PLH I F = 7 to 16mA,V CC = 15 to 30V,V EE = 0V,Rg = 10Ω,Cg = 25nF,f = 10kHz,Duty Cycle = 50%50 130 500 nsPropagation Delay Time to Low Output Level t PHL 50130500Pulse Width Distortion |t PHL - t PLH| for any given device PWD570Propagation Delay Difference (t PHL - t PLH) between any two Devices PDD -100100Output Rise Time(10% to 90%)t r35Output Fall Time(90% to 10%)t f 35Common Mode Transient Immunity at High Output Level CM H I F = 10 to 16mA,V CC = 30V,V CM = 1500V,T A = 25°C35 50 kV/μsCommon Mode Transient Immunity at Low Output Level CM L V F = 0V,V CC = 30V,V CM = 1500V,T A = 25°C35 50 kV/μsSWITCHINGUVLO Turn Off Delay t UVLO OFF I F = 10mA, V O < 5V 0.4 μs UVLO Turn On Delay t UVLO ON I F = 10mA, V O > 5V 1.6 μsELECTRICAL CHARACTERISTICS (Typical Values at V CC V EE = 30V and T A = 25°C,Minimum and Maximum Values at Recommended Operating Conditions, unless otherwise specified)Note :1. A 0.1uF or bigger bypass capacitor must be connected across pin 8 and pin 5.2. PDD is the difference of t PHL and t PLH between any two ICPL3120 under same test conditions.3. Common Mode Transient Immunity in High stage is the maximum tolerable negative dV CM /dt on the trailing edge of the common modeimpulse signal, V CM , to assure that the output will remain high (V O > 15V).4. Common Mode Transient Immunity in Low stage is the maximum tolerable positive dV CM /dt on the leading edge of the common modeimpulse signal, V CM , to assure that the output will remain low (V O < 1V).Parameter Symbol Test Condition Min Typ. Max UnitInsulation Voltage V ISO R.H. = 40% - 60%, T A = 25°Ct = 1 min,5000 V Input - Output ResistanceR I-OV I-O = 500VDC1012ΩInput - Output CapacitanceC I-O f = 1MHz0.92 pFISOLATIONFig 1 Supply Current vs Supply Voltage Fig 2 Supply Current vs Ambient TemperatureFig 3 Transfer Characteristics Fig 4 Output Low Voltage vs Ambient TemperatureFig 5 Output High Voltage vs Ambient TemperatureFig 6 Output High Voltage Drop vsAmbient TemperatureFig 7 Input Threshold Current vs Ambient Temperature Fig 8 Propagation Delay vs Ambient TemperatureFig 9 Propagation Delay vs Forward Current Fig 10 Propagation Delay vs Supply VoltageFig 11 Propagation Delay vsSeries Load Resistance Fig 12 Propagation Delay vs Series Load CapacitanceFig 13 Forward Current vs Forward Voltage V OL Test CircuitI OH Test CircuitIOL Test CircuitV OH Test CircuitI FLH Test CircuitUVLO Test CircuitCMR Test Circuittr , tf, tPLH and tPHL Test CircuitORDER INFORMATIONDEVICE MARKINGAfter PN DescriptionPacking quantity NoneStandard DIP8 50 pcs per tube G10mm Lead Spacing 50 pcs per tube SM Surface Mount50 pcs per tube SMT&RSurface Mount Tape & Reel1000 pcs per reelICPL3120PN ICPL3120 ICPL3120G ICPL3120SM ICPL3120SMT&R ICPL3120I YWWICPL3120 denotes Device Part Number Y denotes 1 digit Year code WW denotes 2 digit Week code I denotes IsocomPACKAGE DIMENSIONS in mm (inch)DIPG FormSMDDescription Symbol Dimension mm (inch) Tape WidthW 16 ± 0.3 (0.63) Pitch of Sprocket HolesP 0 4 ± 0.1 (0.15) F 7.5 ± 0.1 (0.295) P 22 ± 0.1 (0.079) Distance of Compartment to CompartmentP 112 ± 0.1 (0.47)Distance of Compartment to Sprocket HolesRECOMMENDED SOLDER PAD LAYOUT (mm)TAPE AND REEL PACKAGINGIsocom Components is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,when utilizing Isocom Components products, to comply with the standards of safety in makinga safe design for the entire system, and to avoid situations in which a malfunction or failure ofsuch Isocom Components products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that Isocom Components products are used within specified operating ranges as set forth in the most recent Isocom Components products specifications.The Isocom Components products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These Isocom Components products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause lossof human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energycontrol instruments, airplane or spaceship instruments, transportation Instruments, traffic signal instruments, combustion control instruments, medical Instruments, all types of safety devices, etc... Unintended Usage of Isocom Components products listed in this documentshall be made at the customer’s own risk.Gallium arsenide (GaAs) is a substance used in the products described in this document.GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage.The products described in this document are subject to the foreign exchange and foreign tradelaws.The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by Isocom Components for any infringements of intellectual property or other rights of the third parties which may result from its use. No licenseis granted by implication or otherwise under any intellectual property or other rights of Isocom Components or others.The information contained herein is subject to change without notice.。
中文四版-SMC样本
2.5, 4
CAT.C06-02A
6, 10, 15
CAT.C06-02A
6, 10, 16
CAT.C04-01A
错误内容 产品规格变更
改正日期 06年8月
型号表示错误,易造成选型错误 06年8月
螺纹表示错误,易造成选型错误 06年8月
注解错误,易造成选型错误
07年11月
产品尺寸错误,易造成选型错误 07年8月
内容更新
07年11月
内容更新
07年11月
产品尺寸错误,易造成选型错误 磁性开关变更 词汇更正、录入错误
CAT.ES20-152B CAT.ES20-177A CAT.E256A CAT.ES20-179B CAT.E216B CAT.ES20-95B CAT.ES20-157B P-1991-6 CAT.ES20-160A CAT.E204A CAT.ES20-159A CAT.ES20-159A CAT.ES20-159A CAT.ES20-147A
9
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(mm) 无防护套 带防护套
无防护套
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2SA1837_07中文资料
TOSHIBA Transistor Silicon PNP Epitaxial Type2SA1837Power Amplifier ApplicationsDriver Stage Amplifier Applications• High transition frequency: f T = 70 MHz (typ.) • Complementary to 2SC4793Absolute Maximum Ratings (Tc = 25°C)Characteristics Symbol Rating UnitCollector-base voltage V CBO −230 V Collector-emitter voltage V CEO −230 V Emitter-base voltage V EBO −5 V Collector current I C −1 A Base current I B −0.1 A Ta = 25°C 2.0 Collector powerdissipationTc = 25°CP C20WJunction temperature T j 150 °C Storage temperature rangeT stg−55 to 150°CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change intemperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).Unit: mmJEDEC― JEITA ―TOSHIBA 2-10R1AWeight: 1.7 g (typ.)Electrical Characteristics (Tc = 25°C)Typ.Max UnitCondition Min Characteristics Symbol TestCollector cut-off current I CBO V CB = −230 V, I E = 0 ――−1.0μA Emitter cut-off current I EBO V EB = −5 V, I C = 0 ――−1.0μA Collector-emitter breakdown voltage V (BR) CEO I C = −10 mA, I B = 0 −230 ―― V DC current gain h FE V CE = −5 V, I C = −100 mA 100 ― 320Collector-emitter saturation voltage V CE (sat)I C = −500 mA, I B = −50 mA ――−1.5V Base-emitter voltage V BE V CE = −5 V, I C = −500 mA ――−1.0V Transition frequency f T V CE = −10 V, I C = −100 mA ― 70 ― MHz Collector output capacitance C ob V CB = −10 V, I C = 0, f = 1 MHz ― 30 ― pF MarkingA1837lead (Pb)-free package orlead (Pb)-free finish.Collector-emitter voltage V CE (V) I C – V CEC ol le c t o r c u r r e n tI C (A )Base-emitter voltage V BE (V)I C – V BEC o l le c t o r c u r r e n tI C (A )Collector current I C (A)h FE – ICD C c u r r e n t g ai n h F ECollector current I C (A)V CE (sat) – I CC o l l e c t o r -e m i t t e r s a t u r a t io nv o l t a g e V C E (s a t) (V )Collector current I C (mA) f T – I CT r a n s i ti o nf r e q u e n cy f T (M H z )Collector-emitter voltage V CE (V)Safe Operating AreaC o l l e c t o r c u r r e n t I C (A )−−−−−−−−−−−−−−−−−−−−−−−−−−−−−RESTRICTIONS ON PRODUCT USE20070701-EN •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。
IC-3120工业控制器数据表说明书
DEVICE SPECIFICATIONSIC-3120Industrial ControllerDefinitionsWarranted specifications describe the performance of a model under stated operating conditions and are covered by the model warranty.Characteristics describe values that are relevant to the use of the model under stated operating conditions but are not covered by the model warranty.•Typical specifications describe the expected performance met by a majority of the models.•Nominal specifications describe parameters and attributes that may be useful in operation. Specifications are Characteristics unless otherwise noted.ConditionsSpecifications are valid for the range 0 °C to 55 °C unless otherwise noted.Physical CharacteristicsCaution You can impair the protection provided by the IC-3120 if you use it in amanner not described in this document.To clean the IC-3120, wipe it with a dry towel.Dimensions10.8 cm × 6.1 cm × 13.0 cm (4.3 in × 2.4 in ×5.1 in)Weight911 g (2.01 lb)ProcessorType Quad Core Intel Atom Processor E3845 Frequency 1.91 GHzOn-die L2 cache 2 MBOperating SystemSupported Operating Systems NI Linux Real-Time 64-bitWindows Embedded Standard 7 64-bitMemorySystem RAMCapacity 4 GBType DDR3LSpeed1333 MT/sNonvolatile storageCapacity 2 GBPower RequirementsNote Supply voltages are measured at the IC-3120 power connectors.System Power (V)Supply voltage10.8 to 26.4 VDCMaximum power input24 WIsolated Output Power (V ISO)Supply voltage 4.5 to 30 VDCPoE Power (V PoE)Supply voltage48 VDC +10%/-5%2| | IC-3120 SpecificationsReconfigurable FPGAType Spartan-6 LX25Number of flip-flops30,064Number of 6-input LUTs15,03238Number of DSP48A1 slices(18 × 18 multipliers)Number of RAM blocks52 (936 Kbits)Network PortStandard IEEE 802.3 Ethernet, 10BASE-T, 100BASE-TX, 1000BASE-TInterface RJ45Speed10, 100, 1000 MbpsPoE-Capable Network PortsNumber of ports2Standards IEEE 802.3 Ethernet, 10BASE-T, 100BASE-TX, 100BASE-T, IEEE 802.3af (PoE)compatibleInterface RJ45Speed10, 100, 1000 MbpsSupported PoE power classes0, 1, 2, 3PoE power output (per port)15.4 WUSB 2.0 PortsNumber of ports2Type USB 2.0, Hi-SpeedSpeed480 Mbit/sMaximum current 1 A, shared across both portsIC-3120 Specifications| © National Instruments| 3VGA PortMaximum resolution1920 × 1200 at 60 HzTTL Inputs/OutputsNumber of channels8Type BidirectionalOutput voltage range0 V to 5 VMaximum pulse rate 2 MHzMinimum pulse detected500 nsPower-on state Input (high-impedance), 10 kΩ pull-up to 5 V Logic levelsInput low voltage0.59 V maximumInput high voltage 2.57 V minimumOutput low voltage0.38 V maximum at 1.5 mAOutput high voltage 4.12 V minimum at 1.5 mADifferential Inputs/OutputsNumber of channels2Types Bidirectional RS-422/RS-485 or single-endedinputMaximum pulse rate 5 MHz, differentialDifferential input threshold±200 mVDifferential output voltage 2.0 V min (R LOAD = 100 Ω, RS-422)Input voltage range0 V to 5.5 VTTL-compatible single-ended logic levelsInput low voltage0.8 VInput high voltage 2.0 VIsolated InputsType Current sinkingNumber of channels84| | IC-3120 SpecificationsInput voltageInput voltage range0 V to 24 VInput OFF voltage0 V to 2.0 VInput ON voltage 3.3 V to 24 VTurn-on current 2.5 mAMaximum pulse rate100 kHzMinimum pulse detected10 µsInput protectionReverse polarity protection Yes, -30 VInput voltage (channel to C ISO)30 V maximumInput current 3.3 mA, internally limitedIsolated OutputsType Current sourcingNumber of channels8Supply voltage (V ISO)Supply voltage range (V ISO) 4.5 to 30 VDCReverse polarity protection Yes, -30 VMaximum output voltage dropV ISO = 5 V 1.08 V at 35 mAV ISO = 24 V 1.18 V at 80 mAMaximum output currentV ISO = 5 V35 mAV ISO = 24 V80 mAMaximum current limit345 mAMinimum pulse rate 2.5 kHz (load of 100 kΩ, 300 pF)Maximum pulse rate20 kHz (load of 10 kΩ, 300 pF)Minimum pulse generated400 µsNote The isolated outputs have a current limit which will turn off the outputs incase the limit is exceeded. The circuit resets when the output is turned off. Do notdraw more than 100 mA from any 24 V isolated output. Do not draw more than50 mA from any 5 V isolated output. Do not draw more than 640 mA combinedfrom the V ISO pins on the 44-pin D-SUB connector.IC-3120 Specifications| © National Instruments| 5EnvironmentalIndoor use only.Ingress protection (IEC 60529)IP40Temperature (IEC 60068-2-1 and IEC 60068-2-2)Operating0 °C to 55 °CStorage-20 °C to 85 °COperating humidity (IEC 60068-2-56)10% RH to 90% RH, noncondensing Storage humidity (IEC 60068-2-56)5% RH to 95% RH, noncondensing Pollution degree (IEC 60664)2Maximum Altitude2,000 mOperating shock (IEC 60068-2-27)50 g, 3 ms half sine, 3 shocks per side 30 g, 11ms half sine, 3 shocks per sideOperating vibrationRandom (IEC 60068-2-64)10 to 500 Hz, 5 g rmsSwept Sine (IEC 60068-2-6)10 to 500 Hz, 5 gSafetyThis product is designed to meet the requirements of the following electrical equipment safety standards for measurement, control, and laboratory use:•IEC 61010-1, EN 61010-1•UL 61010-1, CSA 61010-1Note For UL and other safety certifications, refer to the product label or the OnlineProduct Certification section.Electromagnetic CompatibilityThis product meets the requirements of the following EMC standards for electrical equipment for measurement, control, and laboratory use; for radio equipment; and for telecommunication terminal equipment:•EN 61326-1 (IEC 61326-1): Class A emissions; Industrial immunity•EN 55011 (CISPR 11): Group 1, Class A emissions•EN 55022 (CISPR 22): Class A emissions•EN 55024 (CISPR 24): Immunity•AS/NZS CISPR 11: Group 1, Class A emissions•AS/NZS CISPR 22: Class A emissions6| | IC-3120 Specifications•FCC 47 CFR Part 15B: Class A emissions•ICES-001: Class A emissionsNote In the United States (per FCC 47 CFR), Class A equipment is intended foruse in commercial, light-industrial, and heavy-industrial locations. In Europe,Canada, Australia and New Zealand (per CISPR 11) Class A equipment is intendedfor use only in heavy-industrial locations.Note Group 1 equipment (per CISPR 11) is any industrial, scientific, or medicalequipment that does not intentionally generate radio frequency energy for thetreatment of material or inspection/analysis purposes.Note For EMC declarations and certifications, and additional information, refer tothe Online Product Certification section.CE ComplianceThis product meets the essential requirements of applicable European Directives, as follows:•2006/95/EC; Low-V oltage Directive (safety)•2004/108/EC; Electromagnetic Compatibility Directive (EMC)Online Product CertificationRefer to the product Declaration of Conformity (DoC) for additional regulatory compliance information. To obtain product certifications and the DoC for this product, visit / certification, search by model number or product line, and click the appropriate link in the Certification column.Environmental ManagementNI is committed to designing and manufacturing products in an environmentally responsible manner. NI recognizes that eliminating certain hazardous substances from our products is beneficial to the environment and to NI customers.For additional environmental information, refer to the Minimize Our Environmental Impact web page at /environment. This page contains the environmental regulations and directives with which NI complies, as well as other environmental information not included in this document.IC-3120 Specifications| © National Instruments| 7Waste Electrical and Electronic Equipment (WEEE)EU Customers At the end of the product life cycle, all NI products must bedisposed of according to local laws and regulations. For more information abouthow to recycle NI products in your region, visit /environment/weee.Battery Replacement and DisposalBattery Directive This device contains a long-life coin cell battery. If you need toreplace it, use the Return Material Authorization (RMA) process or contact anauthorized National Instruments service representative. For more information aboutcompliance with the EU Battery Directive 2006/66/EC about Batteries andAccumulators and Waste Batteries and Accumulators, visit /environment/batterydirective.电子信息产品污染控制管理办法(中国RoHS)中国客户National Instruments符合中国电子信息产品中限制使用某些有害物质指令(RoHS)。
C5027器件资料
KSC5027KSC5027TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.ACEx™Bottomless™CoolFET™CROSSVOLT™E2CMOS™FACT™FACT Quiet Series™FAST®FASTr™GTO™HiSeC™ISOPLANAR™MICROWIRE™POP™PowerTrench®QFET™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™UHC™VCX™DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance Information Formative or InDesign This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.。
REC TwinPeak 2S 72 系列聚氧化盐晶体管 solar 板产品说明说明书
REDUCES BALANCE OF SYSTEM COSTS
IMPROVED PERFORMANCE IN SHADED CONDITIONS
100%
PID Free
INDUSTRY-LEADING LIGHTWEIGHT 72-CELL PANEL
100%
PID Free
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rec TwinPeak 2S 72 SERIES
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REC TwinPeak 2S 72 Series solar panels feature an innovative design with the higher panel efficiency of polycrystalline cells, enabling customers to get the most out of the space used for the installation.
7.39
Open Circuit Voltage - VOC (V)
42.3
42.8
42.9
43.1
43.2
43.3
Short Circuit Current - ISC (A)
7.44
7.74
7.79
7.84
7.90
7.95
Nominal module operating temperature (NMOT: air mass AM 1.5, irradiance 800 W/m², temperature 20°C, windspeed 1 m/s). *Where xxx indicates the nominal power class (PMAX) at STC indicated above, and can be followed by the suffix XV for 1500 V rated modules.
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type2SC3120TV Tuner, UHF Mixer ApplicationsVHF~UHF Band RF Amplifier ApplicationsAbsolute Maximum Ratings (Ta = 25°C)Characteristics Symbol Rating UnitCollector-base voltage V CBO 30 V Collector-emitter voltage V CEO15 VEmitter-base voltage V EBO 3 V Collector current I C 50 mA Base currentI B 25 mA Collector power dissipation P C 150 mW Junction temperature T j 125 °C Storage temperature rangeT stg−55~125 °CNote: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“HandlingPrecautions”/“Derating Concept and Methods”) and individualreliability data (i.e. reliability test report and estimated failure rate, etc).Electrical Characteristics (Ta = 25°C)Characteristics Symbol Test Condition Min Typ. Max UnitCollector cut-off current I CBO V CB = 30 V, I E = 0 ⎯ ⎯ 0.1 μA Emitter cut-off currentI EBO V EB = 2 V, I C = 0 ⎯ ⎯ 1.0 μA Collector-emitter breakdown voltage V (BR) CEOI C = 1 mA, I B = 0 15 ⎯ ⎯ V DC current gainh FE V CE = 10 V, I C = 5 mA 40100200Reverse transfer capacitance C re V CB = 10 V, I E = 0, f = 1 MHz ⎯ 0.6 0.9 pF Transition frequency f TV CE = 10 V, I C = 2 mA15002400⎯ MHzConversion gain G ce 12 17 ⎯ dB Noise figureNFV CC= 10 V, I C= 2 mA, f = 800 MHz, f L = 830 MHz (0dBm) (Figure 1)⎯ 8 ⎯ dBUnit: mmJEDEC ― JEITA―TOSHIBA 2-3F1A Weight: 0.012 g (typ.)L1~L4: φ0.8 mm silver plated copper wire L5: Air coil SCN-5948 (1)-(3) TOKO or equivalent L6: φ0.2 mm copper wire 10 T 5 mm IDC1: Air trimmer TTA23A100 MURATA Manufacturing. Co., Ltd. or equivalentMarkingFigure 1 800 MHz G ce , NF Test CircuitRESTRICTIONS ON PRODUCT USE20070701-EN GENERAL •The information contained herein is subject to change without notice.•TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk.•The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations.• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties.• Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.。