KSD794 NPN Epitaxial Silicon Transistor
江苏长江电子技术有限公司 TO-92 塑料封装型 NPN 交流管 C1815 产品说明书
Typical Characteristics
COLLECTOR CURRENT IC (A)
0.012 0.010 0.008 0.006 0.004 0.002 0.000
0
1
0.3
Static Characteristic
60uA
COMMON EMITTER Ta=25℃
54uA
48uA 42uA
Symbol
Test conditions
V(BR)CBO IC== 100uA, IE 0
V(BR)CEO IC== 0. 1mA, IB 0
V(BR)EBO
IE= = 100uA, IC 0
ICBO = VCB= 60V,IE 0
ICEO
= VCE= 50V, IB 0
IEBO = VEB=5V,IC 0
Min 60 50 5
70
80
Typ Max
0.1 0.1 0.1 700 0.25 1
3.5 10
Unit V V V uA uA uA
V V MHz pF dB
CLASSIFICATION OF hFE
Rank
O
Range
70-140
Y 120-240
GR 200-400
BL 350-700
AB,Oct,2012
COMMON EMITTER VCE=6V
Ta=100℃
Ta=25℃
1
10
COLLECTOR CURRENT IC (mA)
VBEsat —— IC
100 150
β=10
Ta=25℃ Ta=100℃
1
10
COLLECTOR CURRENT IC (mA)
KSD135_137_139 NPN Epitaxial Silicon Transistor
KSD135/137/139 NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEAR AND SWITCHING APPLICATIONS• Complement to BD136 and BD140 respectivelyABSOLUTE MAXIMUM RATINGSELECTRICAL CHARACTERISTICS (T C =25°C)h FE(3) CLASSIFICNTIONCharacteristicSymbol Rating Unit Collector Base Voltage : BD135 : BD137 : BD139Collector Emitter Voltage : BD135 : BD137 : BD139 Emitter Base Voltage Collector Current (DC) Collector Current (Pulse) Base CurrentCollector Dissipation (T C =25°C) Collector Dissipation (T A =25°C) Junction Temperature Storage TemperatureV CBOV CEOV EBO I C I C I B P CP C T J T STG456080456080 51.53.00.512.512.5150-55~150V V V V V V V A A A W W °C °CCharacteristicSymbol Test Condition Min Typ Max Unit Collector Emitter Sustaining Voltage : BD135 : BD137 : BD139 Collector Cutoff Current Emitter Cutoff CurrentDC Current Gain : ALL DEVICE : ALL DEVICE : BD135: BD137, BD139 Collector Emitter Saturation Voltage Base Emitter On VoltageV CEO (sus) I CBO I EBO h FE1 h FE2 h FE3 V CE (Sat) V BE (on)I C =30mA, I B =0 V CB =30V, I E =0 V EB =2V, I C =0 V CE =2V, I C =5mA V CE =5V, I C =0.5A V CE =2V,I C =150mA I C =500mA, I B =50mA V CE =2V, I C =0.5A456080252540400.1102501600.51V V VµA µAV VClassification61016h FE 340-10063-160100-2501.Emitter2.Collector3.BaseTO-126©1999 Fairchild Semiconductor CorporationRev. BTRADEMARKSACEx™CoolFET™CROSSVOLT™E 2CMOS TM FACT™FACT Quiet Series™FAST ®FASTr™GTO™HiSeC™The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.As used herein:ISOPLANAR™MICROWIRE™POP™PowerTrench™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8TinyLogic™1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant intothe body, or (b) support or sustain life, or (c) whosefailure to perform when properly used in accordancewith instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a lifesupport device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONS Definition of TermsDatasheet Identification Product Status Definition Advance InformationPreliminary No Identification Needed Obsolete This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Formative or In DesignFirst ProductionFull ProductionNot In ProductionDISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.。
KSB1097中文资料
KSB1097KSB1097KSB1097TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.ACEx™Bottomless™CoolFET™CROSSVOLT™E2CMOS™FACT™FACT Quiet Series™FAST®FASTr™GTO™HiSeC™ISOPLANAR™MICROWIRE™POP™PowerTrench®QFET™QS™Quiet Series™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™UHC™VCX™DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL.As used herein:1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet Identification Product Status DefinitionAdvance Information Formative or InDesign This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.Preliminary First Production This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.No Identification Needed Full Production This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.。
2SA1615中文资料
Document No. D16119EJ1V0DS00 (1st edition)Date Published April 2002 N CP(K)Printed in JapanSILICON POWER TRANSISTORS2SA1615, 1615-ZPNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGDATA SHEETThe information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.©2002The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed.FEATURES•Large current capacity:I C(DC): −10 A, I C(pulse): −15 A•High h FE and low collector saturation voltage:h FE = 200 MIN. (@V CE = −2.0 V, I C = −0.5 A)V CE(sat) ≤ −0.25 V (@I C = −4.0 A, I B = −0.05 A)QUALITY GRADES•StandardPlease refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)ParameterSymbol Ratings Unit Collector to base voltage V CBO −30V Collector to emitter voltage V CEO −20V Emitter to base voltage V EBO −10V Collector current (DC)I C(DC)−10A Collector current (pulse)I C(pulse)*−15A Base current (DC)I B(DC)−0.5A Total power dissipation P T (T a = 25°C)** 1.0W Total power dissipation P T (T c = 25°C)15W Junction temperature T j 150°C Storage temperatureT stg−55 to +150°C*PW ≤ 10 ms, duty cycle ≤ 50%**Printing board mountedData Sheet D16119EJ1V0DS2ELECTRICAL CHARACTERISTICS (Ta = 25°C)ParameterSymbol ConditionsMIN.TYP.MAX.UnitCollector cutoff current I CBO V CB = −20 V, I E = 0−1.0µA Emitter cutoff current I EBO V EB = −8.0 V, I C = 0−1.0µADC current gain h FE1*V CE = −2.0 V, I C = −0.5 A 200600DC current gainh FE2*V CE = −2.0 V, I C = −4.0 A 160Collector saturation voltage V CE(sat)*I C = −4.0 A, I B = −0.05 A −0.2−0.25V Base saturation voltage V BE(sat)*I C = −4.0 A, I B = −0.05 A −0.9−1.2V Gain bandwidth product f T V CE = −5.0 V, I E = 1.5 A 180MHz Output capacity C ob V CB = −10 V, I E = 0, f = 1.0 MHz 220pF Turn-on time t on 80ns Storage time t stg 300ns Fall timet fI C = −5.0 A, I B1 = −I B2 = 0.125 A,R L = 2.0 Ω, V CC ≅ −10 V60ns*Pulse test PW ≤ 350 µs, duty cycle ≤ 2%h FE CLASSIFICATIONMarking L K h FE2200 to 400300 to 600PACKAGE DRAWING (UNIT: mm)2SA1615 2SA1615-ZElectrode Connection 1. Base 2. Collector 3. Emitter 4. Collector (fin)Data Sheet D16119EJ1V0DS3TYPICAL CHARACTERISTICS (Ta = 25 °C)T o t a l P o w e r D i s s i p a t i o n P T (W )Case Temperature T C (°C)Collector to Emitter Voltage V CE (V)Case Temperature T C (°C)I C D e r a t i n g d T (%)C o l l e c t o r C u r r e n t I C (A )Collector to Emitter Voltage V CE (V)Base to Emitter Voltage V BE (V)Collector Current I C (A)C o l l e c t o r C u r r e n t I C (A )D C C u r r e n t G a i n h F EC o l l e c t o r C u r r e n t I C (A )Single pulse–15–10–5Data Sheet D16119EJ1V0DS4Collector Current I C (A)C o l l e c t o r S a t u r a t i o n V o l t a g e V C E (s a t ) (V )B a s e S a t u r a t i o n V o l t a g e V B E (s a t ) (V )Collector Current I C (A)SWITCHING TIME (t on , t stg , t f ) TEST CIRCUIT%DVH FXUUHQW ZDYHIRUP&ROOHFWRU FXUUHQW ZDYHIRUP[MEMO]Data Sheet D16119EJ1V0DS5M8E 00. 4The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information.No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others.Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features.NEC semiconductor products are classified into the following three quality grades:"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application."Standard":Computers, office equipment, communications equipment, test and measurement equipment, audioand visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots"Special":Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disastersystems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support)"Specific":Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, lifesupport systems and medical equipment for life support, etc.The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application.(Note)(1)"NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.(2)"NEC semiconductor products" means any semiconductor product developed or manufactured by or forNEC (as defined above).••••••。
MJL21193 D和MJL21194 Silicon Power Transistors的数据手册
MJL21193 (PNP),MJL21194 (NPN)Silicon Power TransistorsThe MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output,disk head positioners and linear applications.Features•Total Harmonic Distortion Characterized •High DC Current Gain •Excellent Gain Linearity •High SOA•These Devices are Pb −Free and are RoHS Compliant*MAXIMUM RATINGSRatingSymbol Value Unit Collector −Emitter Voltage V CEO 250Vdc Collector −Base Voltage V CBO 400Vdc Emitter −Base VoltageV EBO5Vdc Collector −Emitter Voltage − 1.5 V V CEX 400Vdc Collector Current −Continuous I C 16Adc Collector Current −Peak (Note 1)I CM 30Adc Base Current − ContinuousI B 5Adc Total Power Dissipation @ T C = 25_C Derate above 25_CP D 2001.43W W/_C Operating and Storage Junction Temperature RangeT J , T stg−65 to +150_CStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.1.Pulse Test: Pulse Width = 300 m s, Duty Cycle ≤2%THERMAL CHARACTERISTICSCharacteristicSymbol Max Unit Thermal Resistance, Junction −to −CaseR q JC0.7_C/W*For additional information on our Pb −Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.x =3 or 4A = Assembly Location YY =YearWW =Work WeekG= Pb −Free PackageDevice Package Shipping †ORDERING INFORMATIONMJL21193G TO −264(Pb −Free)25 Units / Rail MJL21194GTO −264(Pb −Free)25 Units / Rail†For information on tape and reel specifications,including part orientation and tape sizes, please refer to our T ape and Reel Packaging Specifications Brochure, BRD8011/D.16 AMPERE COMPLEMENTARYSILICON POWER TRANSISTORS 250 VOLTS, 200 WATTSMJL2119x AYYWWGTO −264CASE 340G STYLE 2MARKING DIAGRAM1BASE2 COLLECTOR 3EMITTER 311PNPNPNELECTRICAL CHARACTERISTICS (T C = 25°C unless otherwise noted)CharacteristicSymbolMinTypMaxUnitOFF CHARACTERISTICSCollector −Emitter Sustaining Voltage (I C = 100 mAdc, I B = 0)V CEO(sus)250−−Vdc Collector Cutoff Current (V CE = 200 Vdc, I B = 0)I CEO −−100m Adc Emitter Cutoff Current (V CE = 5 Vdc, I C = 0)I EBO −−100m Adc Collector Cutoff Current(V CE = 250 Vdc, V BE(off) = 1.5 Vdc)I CEX−−100m AdcSECOND BREAKDOWNSecond Breakdown Collector Current with Base Forward Biased (V CE = 50 Vdc, t = 1 s (non −repetitive)(V CE = 80 Vdc, t = 1 s (non −repetitive)I S/b4.02.25−−−−AdcON CHARACTERISTICS DC Current Gain(I C = 8 Adc, V CE = 5 Vdc)(I C = 16 Adc, I B = 5 Adc)h FE258−−75−Base −Emitter On Voltage (I C = 8 Adc, V CE = 5 Vdc)V BE(on)−−2.2Vdc Collector −Emitter Saturation Voltage (I C = 8 Adc, I B = 0.8 Adc)(I C = 16 Adc, I B = 3.2 Adc)V CE(sat)−−−−1.44VdcDYNAMIC CHARACTERISTICSTotal Harmonic Distortion at the OutputV RMS = 28.3 V, f = 1 kHz, P LOAD = 100 W RMS h FEunmatched (Matched pair h FE = 50 @ 5 A/5 V)h FE matchedT HD−−0.80.08−−%Current Gain Bandwidth Product(I C = 1 Adc, V CE = 10 Vdc, f test = 1 MHz)f T 4−−MHz Output Capacitance(V CB = 10 Vdc, I E = 0, f test = 1 MHz)C ob−−500pF I C COLLECTOR CURRENT (AMPS)Figure 1. Typical Current Gain Bandwidth Product Figure 2. Typical Current Gain Bandwidth Productf , C U R R E N T G A I N B A N D W I D T H P R O D U C T (M H z )TPNP MJL21193f , C U R R E N T G A I N B A N D W I D T H P R O D U C T (M H z )T NPN MJL21194I C COLLECTOR CURRENT (AMPS)6.56.05.55.04.54.03.53.08.07.0V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)I C , C O L L E C T O R C U R R E N T (A )NPN MJL211945.0Figure 3. DC Current Gain, V CE = 20 VFigure 4. DC Current Gain, V CE = 20 VFigure 5. DC Current Gain, V CE = 5 V Figure 6. DC Current Gain, V CE = 5 Vh F E , D C C U R R E N T G A I NI C COLLECTOR CURRENT (AMPS)I C COLLECTOR CURRENT (AMPS)h F E , D C C U R R E N T G A I Nh F E , D C C U R R E N T G A I NI C COLLECTOR CURRENT (AMPS)I C COLLECTOR CURRENT (AMPS)V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)Figure 7. Typical Output CharacteristicsI C , C O L L E C T O R C U R R E N T (A )Figure 8. Typical Output Characteristicsh F E , D C C U R R E N T G A I NPNP MJL21193PNP MJL21193NPN MJL21194100010010100010010100010010V B E (o n ), B A S E -E M I T T E R V O L T A G E (V O L T S )Figure 9. Typical Saturation Voltages I C , COLLECTOR CURRENT (AMPS)S A T U R A T I O N V O L T A G E (V O L T S )Figure 10. Typical Saturation VoltagesI C , COLLECTOR CURRENT (AMPS)S A T U R A T I O N V O L T A G E (V O L T S )Figure 11. Typical Base −Emitter Voltage I C , COLLECTOR CURRENT (AMPS)Figure 12. Typical Base −Emitter VoltageI C , COLLECTOR CURRENT (AMPS)V B E (o n ), B A S E -E M I T T E R V O L T A G E (V O L T S )There are two limitations on the power handling ability of a transistor; average junction temperature and secondary breakdown. Safe operating area curves indicate I C − V CE lim-its of the transistor that must be observed for reliable opera-tion; i.e., the transistor must not be subjected to greater dissip-ation than the curves indicate.The data of Figure 13 is based on T J(pk) = 150°C; T C is vari-able depending on conditions. At high case temperatures,thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second break-down.PNP MJL21193NPN MJL21194Figure 13. Active Region Safe Operating AreaV CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)I C , C O L L E C T O R C U R R E N T (A M P S )3.02.52.01.51.00.501.41.21.00.80.60.40.20101.00.1100101.00.1Figure 14. MJL21193 Typical Capacitance V R , REVERSE VOLTAGE (VOLTS)C , C A P A C I T A N C E (p F )Figure 15. MJL21194 Typical CapacitanceV R , REVERSE VOLTAGE (VOLTS)C , C A P A C I T A N C E (p F )8.0 WFigure 16. Typical Total Harmonic DistortionFigure 17. Total Harmonic Distortion Test CircuitFREQUENCY (Hz)T H D , T O T A L H A R M O N I C D I S T O R T I O N (%)1.21.11.00.90.80.70.610000010000100010010STYLE 1:PIN 1.GATE2.DRAIN3.SOURCE STYLE 2:PIN 1.BASE2.COLLECTOR3.EMITTER STYLE 3:PIN 1.GATE2.SOURCE3.DRAINSTYLE 4:PIN 1.DRAIN2.SOURCE3.GATEDIM A MIN MAX MIN MAX INCHES28.029.0 1.102 1.142MILLIMETERS B 19.320.30.7600.800C 4.7 5.30.1850.209D 0.93 1.480.0370.058E 1.9 2.10.0750.083F 2.2 2.40.0870.102G 5.45 BSC 0.215 BSC H 2.6 3.00.1020.118J 0.430.780.0170.031K 17.618.80.6930.740L 11.2 REF 0.411 REF N 4.35 REF 0.172 REF P 2.2 2.60.0870.102Q 3.1 3.50.1220.137R 2.25 REF0.089 REF U 6.3 REF 0.248 REF W2.83.20.1100.125NOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.2.CONTROLLING DIMENSION: MILLIMETER.STYLE 5:PIN 1.GATE2.COLLECTOR3.EMITTER0.25 (0.010) M T BSSCALE 1:2TO −3BPL (TO −264)CASE 340G−02ISSUE JDATE 17 DEC 2004GENERICMARKING DIAGRAM**This information is generic. Please refer to device data sheet for actual part marking.Pb −Free indicator, “G” or microdot “ G ”,may or may not be present.XXXXXX AYYWWXXXXXX = Specific Device Code A = Location Code YY = YearWW = Work WeekMECHANICAL CASE OUTLINEPACKAGE DIMENSIONSON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor theADDITIONAL INFORMATIONTECHNICAL PUBLICATIONS:Technical Library:/design/resources/technical−documentation onsemi Website: ONLINE SUPPORT: /supportFor additional information, please contact your local Sales Representative at /support/sales。
安森美半导体-BC847C-NPN通用SMD三极管-数据表说明书
Ratings (at TA = 25°C unless otherwise specified)
Symbol
Collector Capacitance at f = 1MHz IE = Ie = 0; VCB = 10V
CC
Transition Frequency at f = 100MHz IC = 10mA; VCE = 5V
Symbol VCES VCEO ICM Ptot Tj
Maximum
Dimensions : Millimetres
BC847C 50 45 200 250 150
Units
V
mA mW °C
Page 1
09/05/08 V1.1
BC847C
General Purpose SMD NPN Transistors
10
Ptot (mW)
250
Device Marking
IG
Part Number BC847C
Unit pF MHz dB
-
-
Page 3
09/05/08 V1.1
BC847C
General Purpose SMD NPN Transistors
Notes:
International Sales Offices:
Package Outline Details
Absolute Maximum Ratings
Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (Open Base) Collector Current (Peak Value) Total Power Dissipation up to Tamb = 25°C Junction Temperature
东芝2SA1015管数据表说明书
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)2SA1015Audio Frequency General Purpose Amplifier ApplicationsDriver Stage Amplifier Applications•High voltage and high current: V CEO = −50 V (min),I C = −150 mA (max)•Excellent h FE linearity : h FE (2) = 80 (typ.) at V CE = −6 V, I C = −150 mA:h FE (I C = −0.1 mA)/h FE (I C = −2 mA) = 0.95 (typ.)•Low noise: NF = 1dB (typ.) (f = 1 kHz)•Complementary to 2SC1815.Absolute Maximum Ratings (Ta = 25°C)Characteristics SymbolRatingUnitCollector-base voltage V CBO−50 VCollector-emitter voltage V CEO−50 VEmitter-base voltage V EBO−5 VCollector current I C−150 mABase current I B−50 mACollector power dissipation P C 400mWJunction temperature T j125 °CStorage temperature range T stg−55~125 °CNote: Using continuously under heavy loads (e.g. the application of hightemperature/current/voltage and the significant change in temperature, etc.) may cause this product todecrease in the reliability significantly even if the operating conditions (i.e. operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability testreport and estimated failure rate, etc).Electrical Characteristics (Ta = 25°C)Characteristics Symbol TestCondition MinTyp.Max Unit Collector cut-off current I CBO V CB=−50 V, I E= 0 ⎯ ⎯−0.1μA Emitter cut-off current I EBO V EB=−5 V, I C= 0 ⎯⎯−0.1μAh FE (1)(Note)V CE=−6 V, I C=−2 mA 70 ⎯ 400DC current gainh FE (2)V CE=−6 V, I C=−150 mA 25 80 ⎯Collector-emitter saturation voltage V CE (sat)I C=−100 mA, I B=−10 mA ⎯−0.1 −0.3VBase-emitter saturation voltage V BE (sat)I C=−100 mA, I B=−10 mA ⎯⎯−1.1V Transition frequency f T V CE=−10 V, I C=−1 mA 80 ⎯⎯ MHz Collector output capacitance C ob V CB=−10 V, I E= 0, f = 1 MHz ⎯ 4 7 pF Base intrinsic resistance r bb’V CE=−10 V, I E= 1 mA, f = 30 MHz ⎯ 30 ⎯ΩNoise figure NF V CE=−6 V, I C=−0.1 mA, R G= 10 kΩ,f = 1 kHz⎯ 1.0 10 dBNote: h FE (1) classification O: 70~140, Y: 120~240, GR: 200~400Unit: mmJEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.)RESTRICTIONS ON PRODUCT USE•Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.•This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.•Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.•Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document.•Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.•Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.•The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.•ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITYWHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.•Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. •Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.。
8050s(贴片三极管)
UNISONIC TECHNOLOGIES CO., LTD8050SNPN SILICON TRANSISTORLOW VOLTAGE HIGHCURRENT SMALL SIGNAL NPN TRANSISTORDESCRIPTIONThe UTC 8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.FEATURES *Collector current up to 700mA*Collector-Emitter voltage up to 20V *Complementary to UTC 8550SORDERING INFORMATIONOrdering Number Pin AssignmentNormal Lead Free Plating Halogen-Free Package 1 2 3 Packing8050S-x-AE3-R 8050SL-x-AE3-R 8050SG-x-AE3-R SOT-23 E B C Tape Reel 8050S-x-T92-B 8050SL-x-T92-B 8050SG-x-T92-B TO-92 E C B Tape Box 8050S-x-T92-K 8050SL-x-T92-K 8050SG-x-T92-K TO-92 EC BBulkMARKING (For SOT-23 Package)ABSOLUTE MAXIMUM RATING ( Ta=25°C, unless otherwise specified )PARAMETER SYMBOL RATINGS UNITCollector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO 5 V Collector Current I C 700 mASOT-23 350 mWCollector Dissipation(Ta=25°C) TO-92 P C1 WJunction Temperature T J +150 °C Storage Temperature T STG -40 ~ +150 °CNote: Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)PARAMETER SYMBOLTEST CONDITIONS MIN TYP MAX UNITCollector-Base Breakdown Voltage BV CBO I C = 100μA, I E = 0 30 V Collector-Emitter Breakdown Voltage BV CEO I C = 1mA, I B = 0 20 V Emitter-Base Breakdown Voltage BV EBO I E = 100μA, I C =0 5 V Collector Cut-Off Current I CBO V CB = 30V,I E = 0 1 uA Emitter Cut-Off Current I EBOV EB = 5V, I C = 0 100nA h FE1V CE = 1V, I C = 1mA 100 400 h FE2V CE = 1V, I C = 150 mA 120 DC Current Gain(note) h FE3V CE = 1V, I C = 500mA 40 Collector-Emitter Saturation Voltage V CEO(SAT)I C = 500mA, I B = 50mA 0.5V Base-Emitter Saturation Voltage V BEO(SAT)I C = 500mA, I B = 50mA 1.2V Base-Emitter Saturation Voltage V BEO(SAT)V CE = 1V, I C = 10mA 1.0V Current Gain Bandwidth Product f T V CE = 10V, I C = 50mA 100 MHz Output Capacitance CobV CB = 10V, I E = 0, f = 1MHz 9.0 pFCLASSIFICATION OF h FE2RANK C D ERANGE 120-200 160-300 280-400TYPICAL CHARACTERISTICSC o l l e c t o r C u r r e n t , I c (m A )D C C u r r e n t G a i n , h F ES a t u r a t i o n V o l t a g e (m V )C o l l e c t o r C u r r e n t , I c (m A )C u r r e n t G a i n -B a n d w i d t h P r o d u c t , f (M H z )C a p a c i t a n c e , C o b (p F )。
MEMORY存储芯片SS8050中文规格书
SS8050 — NPN Epitaxial Silicon Transistor SS8050NPN Epitaxial Silicon TransistorFeatures • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation.•Complimentary to SS8550•Collector Current: I C = 1.5 AOrdering InformationAbsolute Maximum RatingsStresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise noted.Part NumberTop Mark Package Packing Method SS8050BBUS8050TO-92 3L Bulk SS8050CBUS8050TO-92 3L Bulk SS8050CTAS8050TO-92 3L Ammo SS8050DBUS8050TO-92 3L Bulk SS8050DTA S8050TO-92 3L AmmoSymbolParameter Value Unit V CBOCollector-Base Voltage 40V V CEOCollector-Emitter Voltage 25V V EBOEmitter-Base Voltage 6V I CCollector Current 1.5A T JJunction Temperature 150°C T STG Storage Temperature -65 to 150°C 1.Emitter 2. Base 3. CollectorTO-921h FE ClassificationBV CEOCollector-Emitter Breakdown Voltage I C = 2 mA, I B = 025V BV EBOEmitter-Base Breakdown Voltage I E = 100 μA, I C = 06V I CBOCollector Cut-Off Current V CB = 35 V, I E = 0100nA I EBOEmitter Cut-Off Current V EB = 6 V, I C = 0100nA h FE1DC Current Gain V CE = 1 V, I C = 5 mA 45h FE2V CE = 1 V, I C = 100 mA 85300h FE3V CE = 1 V, I C = 800 mA 40V CE (sat)Collector-Emitter Saturation Voltage I C = 800 mA, I B = 80 mA 0.5V V BE (sat)Base-Emitter Saturation Voltage I C = 800 mA, I B = 80 mA 1.2V V BE (on)Base-Emitter On Voltage V CE = 1 V, I C = 10 mA 1V C obOutput Capacitance V CB = 10 V, I E = 0, f = 1 MHz 9.0pF f T Current Gain Bandwidth Product V CE = 10 V, I C = 50 mA 100MHz ClassificationB C D h FE285 ~ 160120 ~ 200160 ~ 3005.33 4.32cgj�）15.62 13.200.56 0.36 4.19 3.055.20 4.3221 312M] 2.66 2.13 0.52 0.30NOTES: UNLESS OTHERWISE SPECIFIEDA )D阳，WING WITH RE陀RENCE TO JEDEC T0-92 RECOMMENDATIONS. B )ALL DIMENSIONS ARE IN MILLIM盯ERS.C )D阳W ING CONFORMS TO ASME Y14.SM-2009. D ) D阳.W ING FILENAME: M盯－ZA03DR凹4.。
转铁蛋白封装介孔硅-概述说明以及解释
转铁蛋白封装介孔硅-概述说明以及解释1.引言1.1 概述转铁蛋白是一种具有重要生物学功能的蛋白质，可以作为药物传递和生物成像的载体。
介孔硅具有高比表面积和可控孔径大小的特性，被广泛应用于药物传递、生物传感和生物成像等领域。
本文将探讨转铁蛋白封装介孔硅的方法和优势，并展望其在药物传递领域的应用前景。
通过对这两种材料特性的综合利用，可以提高载药量、控制释放速率，从而为药物传递研究和开发提供新的思路和方法。
1.2 文章结构文章结构部分将包括以下内容：1. 引言部分，介绍文章的主题和背景，以及研究的目的和意义。
2. 转铁蛋白的特性，包括其结构、功能和应用领域。
3. 介孔硅的特性，包括其制备方法、性质和应用领域。
4. 转铁蛋白封装介孔硅的优势，探讨这种复合材料在生物医学和纳米材料领域的潜在应用。
5. 应用前景展望，展望转铁蛋白封装介孔硅在药物传输、影像诊断和肿瘤治疗等方面的未来发展趋势。
通过这些内容，读者可以全面了解转铁蛋白封装介孔硅在生物医学领域的潜在应用和发展前景。
1.3 目的转铁蛋白封装介孔硅作为一种具有潜在应用前景的新型纳米材料体系，本文旨在探讨其在生物医药领域的应用潜力。
通过深入分析转铁蛋白和介孔硅的特性，探讨其相结合后可能产生的协同效应，并评述其在药物传输、靶向输送、生物成像等方面的优势。
同时，本文还将展望转铁蛋白封装介孔硅在未来的应用前景，为其在生物医药领域的进一步研究和应用提供理论基础和实践指导。
2.正文2.1 转铁蛋白的特性转铁蛋白是一种重要的蛋白质，具有多种特性使其成为一种理想的载体材料。
首先，转铁蛋白具有良好的生物相容性，可以在生物体内表现出较低的免疫原性，这使得它可以被广泛应用于生物医学领域。
其次，转铁蛋白在体内具有稳定的结构，可以稳定保护其中的药物或其他活性物质，从而有效延长药物的作用时间和提高药物的疗效。
此外，转铁蛋白本身具有一定的药物负载能力，可以通过化学修饰或结构改造来实现更好的药物负载性能。
钛酸四丁酯的粘度
钛酸四丁酯的粘度钛酸四丁酯是一种无色透明液体，又称四丁氧基钛（TBT），其化学式为Ti(OC4H9)4，分子量为376.52。
它是一种重要的化学物质，在材料科学、化学工程等领域广泛应用，同时还是合成钛酸盐、固相燃料催化剂的原料。
钛酸四丁酯的粘度是其重要的物理特性之一，其粘度值的大小直接影响着其在化工生产中的使用效果。
下面将从理论和实验两方面来探讨钛酸四丁酯的粘度问题。
一、理论探讨1、背景知识粘度是流体力学中描述流体阻力大小和流体内部分子间摩擦阻力大小的物理量。
在钛酸四丁酯的研究中，一般采用的粘度单位是Pa·s（帕斯卡秒），也可以用mPa·s（毫帕斯卡秒）或cP（厘泊）来表示。
2、粘度理论模型目前，钛酸四丁酯粘度的理论模型较为成熟，主要包括以下几种：（1）Einstein理论：它是最早的粘度描述理论，认为粘度与流体中分子间碰撞的频率有关。
（2）Kinetic Theory理论：它可以用来解释粘度的实验结果。
它认为流体的分子具有不同的速度，当它们遇到障碍物的时候会发生碰撞，产生一种动力学效应。
（3）Nernst-Einstein理论：它是针对带有电荷的粒子的粘度问题提出的。
当粘度物质带有电荷时，该理论认为粘度是由于电荷带来的分子相互作用引起的。
（4）Flory-Huggins理论：它是用来描述高分子物质粘度的理论，但同样也可用于某些化学物质的粘度研究。
它是一种现代的基于统计物理的理论模型。
以上模型在钛酸四丁酯的研究中都有较好的应用，研究人员可以根据具体情况选择不同的模型进行研究。
二、实验探讨1、实验原理本文中提供的实验方法是通过科学试验探讨钛酸四丁酯的粘度问题。
该实验原理一般基于Stokes流体力学定律，即粘度与流体粘度、流体密度、粘度计测量长度有关。
2、实验步骤（1）在室温下将钛酸四丁酯样品装入比色皿中。
（2）用粘度计将拉伸放松计时仪（LRDJ）置于钛酸四丁酯液层上方，同时开启计时器。
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KSD794/794A NPN EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY POWER AMPLIFIER
• Complement to KSB744/KSB744A
ABSOLUTE MAXIMUM RATINGS
*
PW ≤10ms, Duty Cycle ≤50%
ELECTRICAL CHARACTERISTICS (T C =25°C)
*Pulse Test: PW ≤350µs, Duty Cycle ≤2% Pulsed
h FE (2) CLASSIFICNTION
Characteristic
Symbol Rating Unit Collector- Base Voltage
Collector-Emitter Voltage : KSD794 : KSD794A Emitter- Base Voltage Collector Current (DC)*Collector Current (Pulse) Base Current (DC)
Collector Dissipation (T A =25°C) Collector Dissipation (T C =25°C) Junction Temperature Storage Temperature
V CBO V CEO
V EBO I C I C I B P C
P C T J T STG
704560 5 3 50.6 110150-55 ~ 150
V V V V A A A W W °C °C
Characteristic
Symbol Test Condition
Min Typ Max Unit Collector Cutoff Current Emitter Cutoff Current * DC Current Gain
* Collector Emitter Saturation Voltage * Base Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance
I CBO I EBO h FE1 h FE2
V CE (Sat) V BE (Sat) f T C ob
V CB = 45V, I E = 0 V EB = 3V, I C = 0
V CE = 5V, I C = 20mA V CE = 5V, I C = 0.5A I C =1.5A, I B = 0.15A I C =1.5A, I B = 0.15A V CE = 5V, I E = 0.1A
V CB = 10V, I E = 0, f = 1MHz
3060
70100 0.3 0.8 60 40
1 1
320 2 2
µA µA
V V MHz pF
Classification
R O Y h FE (2)
60 - 120
100 - 200
160 - 320
1. Emitter
2. Collector
3. Base
TO-126
©1999 Fairchild Semiconductor Corporation
Rev. B
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