EMP11中文资料

Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
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EMP11
Diodes
Switching diode
EMP11
Application Ultra high speed switching External dimensions (Unit : mm) Land size figure (Unit : mm)
1.0 0.5 0.5
1.6±0.1 0.22±0.05 0.13±0.05 (5) (4)
1.2±0.1
1.6±0.1
0.45
Features 1) Ultra small mold type. (EMD6) 2) High reliability
(6)
0.25 0.15
0.3 0.15 0.25
10 9
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
890
8 7 6 5 4 3 2 1 0
AVE:1.831pF
Ta=25℃ VR=6V f=1MH:870.1mV 850
IR DISPERSION MAP
Ct DISPERSION MAP
900 FORWARD VOLTAGE:VF(mV) Ta=25℃ IF=100mA n=30pcs
100 90 REVERSE CURRENT:IR(nA) 80 70 60 50 40 30 20 10 0 VF DISPERSION MAP AVE:4.310nA Ta=25℃ VR=70V n=10pcs
1ms
time
300us
1 0.1 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
10 0.001
0.1 10 TIME:t(s) Rth-t CHARACTERISTICS
1000 ESD DISPERSION MAP
Rev.B
2/2
元器件交易网
5 Ifsm 8.3ms 8.3ms 1cyc
4
3
10
2
5
AVE:2.50A
1
0
0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
100 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm t TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
1000
Rth(j-a) ELECTROSTATIC DDISCHARGE TEST ESD(KV)
10 9
Rth(j-c)
8 7 6 5 4 3 2 1 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:1.47kV AVE:2.98kV
10
100
Mounted on epoxy board IM=1mA IF=10mA
Ta=150℃
Ta=125℃
10 f=1MHz
FORWARD CURRENT:IF(mA)
Ta=75℃ Ta=25℃ Ta=-25℃
10
Ta=150℃
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1
Ta=-25℃
1
0.1
0 100 200 300 400 500 600 700 800 900 1000
4.0±0.1 2.0±0.05 φ1.5±0.1 0 1.75±0.1 0.3±0.1
3.5±0.05
1.65±0.1
5.5±0.2
8.0±0.2
1.65±0.1
1PIN
4.0±0.1
φ0.8±0.1
0～0.1
0.65±0.1
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR Ct trr Min. Typ. Max. 1.2 0.1 3.5 4 Unit V µA pF ns Conditions IF=100mA VR=70V VR=6V , f=1MHz VR=6V , IF=5mA , RL=50Ω
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Forward current (Single) Average rectified forward current (Single) Surge current （t=1us） Power dissipation Junction temperature Storage temperature Symbol VRM VR IFM Io Isurge Pd Tj Tstg Limits 80 80 300 100 4 150 150 -55 to +150 Unit V V mA mA A mW ℃ ℃
0
10
FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS
20 30 40 50 60 70 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS
80
0.1 0 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20
Rev.B
1/2
1.65±0.01
1.55
元器件交易网
EMP11
Diodes
Electrical characteristic curves (Ta=25°C)
100
Ta=75℃ REVERSE CURRENT:IR(nA) Ta=125℃
10000 1000 Ta=25℃ 100 10 1 0.1 0.01 0.001
0.4
0～0.1
Construction Silicon epitaxial planar
EMD6