LTI550HN02_G

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fF42-70G-2 系列千兆以太网测试仪 规格说明书

fF42-70G-2 系列千兆以太网测试仪 规格说明书

S P E C S H E ETKEY FEATURES AND BENEFITSAccelerate Ethernet service activation with bidirectional EtherSAM (Y .156) and RFC 2544 test suites, multistream traffi c generation, Through mode and bit-error-rate (BER) testing Experience unprecedented confi guration simplicity with hybrid touchscreen/keypad navigation and data entry Increase technician autonomy and productivity with intelligent discovery of remote EXFO Ethernet testers, as well as in-service testing via dual-port Through mode Eliminate errors in data interpretation with revolutionary new GUI on 7-inch TFT screen, historical event logger, visual gauges and 3D-icon depictions of pass/fail outcomesSimplify reporting with integrated Wi-Fi and Bluetooth connectivity capabilitiesIntegrated applications to test VoIP services, and additional IP test utilities including VLAN scan and LAN discovery via EXpert VoIP and EXpert IP test toolsSupport for packet capture and analysis, wireless troubleshooting and TCP throughput testingExtend fi eld testing operations with compact, lightweight platform equipped with long-duration battery packFTB-860 NetBlazer Series Ethernet TestersPOWERFUL, FAST, INTUITIVE ETHERNET TESTINGeld technicians comprehensive, yet simple test suites to quickly and easily turn up, validate and troubleshoot Ethernet services, with full EtherSAM capabilities, from 10 Mbit/s to 10 Gbit/s.EXFO FTB-860G SpecsProvided by THE ULTRA-PORTABLE CHOICE FOR HIGH-SPEED ETHERNET TESTINGThe ongoing deployment of GigE and 10 GigE circuits across access and metro networks demands a testing solution that seamlessly adapts to either operating environment—without sacrificing portability, speed or cost—in order to guarantee the performance and quality of service (QoS) metrics of these services.Leveraging the powerful, intelligent FTB-1 handheld platform, the NetBlazer series streamlines processes and empowers field technicians to seamlessly transition between 10/100/1000/10000 interfaces to rapidly adapt to a variety of networking environments.Powerful and FastThe NetBlazer series is a portfolio of fully integrated 10 Mbit/s to 10 Gbit/s handheld Ethernet testers. Available in three hardware configurations, each FTB-860x offers the industry’s largest TFT screen with unprecedented configuration simplicity via hybrid touchscreen/keypad navigation. Platform connectivity is abundant via Wi-Fi, Bluetooth, Gigabit Ethernet or USB ports, making it accessible in any environment.FTB-860G: 10 M BIT /S TO 10 G BIT/SIf the need is for full Ethernet coverage from 10 Mbit/s up to 10 Gbit/s, › 10 Base-T to 10 gigabit testing› IPv6 testingFTB-860: GIGABIT ETHERNETIf the need is purely for Gigabit Ethernet coverage, then the FTB-860 is › 10 Base-T to 1 gigabit testing› IPv6 testingFTB-860GL: 10 M BIT/S TO 10 G BIT/S LOOPBACK ONLYCombined with the FTB-860G or FTB-860, the FTB-860GL is the most cost-effective solution for GigE and 10 GigE intelligent loopback testing; it supports bidirectional EtherSAM and RFC 2544 testing and offers five › 10 Base-T to 10 gigabit loopback› EtherSAM (bidirectional partner)*› RFC 2544 (bidirectional partner)› Intelligent autodiscovery› IPv6 testing› Ping/traceroute* Contact your EXFO representative to confirm availability.Setting a New GUI Standard: Unprecedented Simplicity in Configuration Setup and NavigationIntelligent Situational Configuration Setup›G uides technicians through complete, accurate testingprocesses(suggestion prompts, help guides, etc.)›R educes navigation by combining associated testingfunctions on a single screen›I ntelligent autodiscovery allows a single technician to performend-to-end testingDedicated Quick-Action Buttons›Remote discovery to fi nd all the other EXFO units›Laser on/off›T est reset to clear the results and statistics while running a test ›Report generation›Save or load test confi gurations›Quick error injectionAssorted Notifications›Clear indication of link status for single or dual ports›Negotiated speed display for single or dual ports›O ptical power status available at all times for single or dual ports›Pass/fail indication at all times for all testsStreamlined Navigation›R emote discovery button available at all times; no reason to leave your current location to scan for a remote unit›T esting status can be maximized to fi ll the entire screen by simply clicking on the alarm status button; whether the unit is in your hand or across the room, test results can be easily determined with a simple glance at the display screen›R FC 2544 configuration is maximized in a single page;no need to navigate through multiple screens to confiindividual subtests›R FC 2544 results and graphs are also maximized in a single page; no need to navigate through multiple screens to viewindividual RFC subtest results FO unitswhile running a testdual portsal portstimes for single mes; no reason toemote unite entire screen by ; whether the unit sults can be easily splay screenn a single page; eens to confi gure ximized in a single e screens to viewRAPID, ACCURATE TEST RESULTS AT YOUR FINGERTIPSKey FeaturesIntelligent Network Discovery ModeUsing any NetBlazer series test set, you can single-handedly scan the network and connect to any available EXFO datacom remote tester. Simply select the unit to be tested and choose whether you want traffic to be looped back via Smart Loopback or Dual Test Set for simultaneous bidirectional EtherSAM and RFC 2544 results. No more need for an additional technician at the far end to relay critical information—the NetBlazer products take care of it all.Smart Loopback FlexibilityThe Smart Loopback functionality has been enhanced to offer five distinct loopback modes. Whether you are looking to pinpoint loopback traffic from a UDP or TCP layer, or all the way down to a completely promiscuous mode (Transparent Loopback mode), NetBlazer has the flexibility to adjust for all unique loopback situations.Global Pass/Fail AnalysisThe NetBlazer series provides real-time pass/fail status via text or icons. Clicking on the pass/fail indicator maximizes this important status to full screen, providing instant, easily understood notification whether the unit is in the technician’s hands or across the room.Remembering the Last IP or MAC AddressesField technicians have enough things to worry about and don’t always have the luxury of time to enter the same IP or MAC address test after test. The NetBlazer series remembers the last 10 MAC, IPv4 and IPv6 addresses as well as J0/J1 traces for 10G WAN, even afterthe unit has been rebooted.Traffic GenerationUnparalleled analog visual gauges combined with user-defined thresholds show instantaneously whether or not the test traffic is in or out of expected ranges.Additionally, bandwidth and frame size can be modified on-the-fly without navigating away to a different page, giving technicians instantaneous reaction on the gauges. Traffic generation brings together over 10 critical stats in a very visual and organizedfashion, ensuring that technicians can quickly and easily interpret the outcome of the test.The analog gauges are lined with Green and Red layers to represent the expected thresholds.Real-time bandwidth and frame-size adjustment.Overall pass/fail assessment.Throughput, jitter and latency with visual pass/fail thresholds,analog gauges and digitalreadouts.Frame loss and out-of-sequence notification.Multistream ConfigurationConfiguring multiple streams with proper COS and QOS bits can be a complex task. NetBlazer makes it simpler, with all streams easily selectable and configurable from one location. With large icons located throughout the stream pages, configuration becomes as simple as a touch of a finger. Technicians can define one configuration profile and apply it to all the background streams simultaneously. From there, it is just a matter of making slight tweaks as needed rather than complete configuration profiles per stream.Through ModeThrough mode testing consists of passing traffic through either of the NetBlazer’s two 100/1000 Base-X ports or the two 10/100/1000 Base-T ports for in-service troubleshooting of live traffic between the carrier/service provider network and the customer network. Through mode allows technicians to access circuits under test without the need for a splitter.Supporting 10 Gigabit EthernetThe 10 G igabit Ethernet interface is available in both 10 G igE LAN and 10 G igE WAN modes via a single SFP+ transceiver. All Ethernet testing applications—from BER testing to the full EtherSAM suite—are available for both IPv4 and IPv6. Unique to the 10 GigE WAN interface is the ability to send and monitor SONET/SDH J0/J1 traces and the path signal label (C2). The WAN interface can also monitor SONET and SDH alarms and errors.E THER SAM: THE NEW STANDARD IN ETHERNET TESTINGUntil now, RFC 2544 has been the most widely used Ethernet testing methodology. However it was designed for network device testing in the lab, not for service testing in the field. ITU-T Y.156sam is the newly introduced draft standard for turning up and troubleshooting carrier Ethernet services. It has a number of advantages over RFC 2544, including validation of critical SLA criteria such as packet jitter and QoS measurements. This methodology is also significantly faster, therefore saving time and resources while optimizing QoS.EXFO’s EtherSAM test suite—based on the draft ITU-T Y.156sam Ethernet service activation methodology—provides comprehensive field testing for mobile backhaul and commercial services.Contrary to other methodologies, EtherSAM supports new multiservice offerings. It can simulate all types of services that will run on the network and simultaneously qualify all key SLA parameters for each of these services. Moreover, it validates the QoS mechanisms provisioned in the network to prioritize the different service types, resulting in better troubleshooting, more accurate validation and much faster deployment. EtherSAM is comprised of two phases, the network configuration test and the service test.Network Configuration TestThe network configuration test consists of sequentially testing each service. It validates that the service is properly provisioned and that all specific KPIs or SLA parameters are met.Service TestOnce the configuration of each individual service is validated, the service test simultaneously validates the quality of all the services over time.EtherSAM Bidirectional ResultsEXFO’s EtherSAM approach proves even more powerful as it executes the complete ITU-T Y.156sam test with bidirectional measurements. Key SLA parameters are measured independently in each test direction, thus providing 100 % first-time-rightservice activation—the highest level of confidence in service testing.EX PERT TEST TOOLSEXpert Test Tools is a series of platform-based software testing tools that enhance the value of the FTB-1 platform, providing additional testing capabilities without the need for additional modules or units.The EXpert VoIP Test Tools generates a voice-over-IP call directly from the test platform to validateperformance during service turn-up and troubleshooting.›Supports a wide range of signaling protocols, including SIP, SCCP, H.248/Megaco and H.323 ›Supports MOS and R-factor quality metrics› Simplifies testing with configurable pass/fail thresholds and RTP metricsThe EXpert IP Test Tools integrates six commonly used datacom test tools into one platform-based application to ensure field technicians are prepared for a wide-range of testing needs. › Rapidly perform debugging sequences with VLAN scan and LAN discovery› Validate end-to-end ping and traceroute› Verify FTP performance and HTTP availabilityTEST TOOLS IPEXpert TEST TOOLS VoIPOPTICAL INTERFACESTwo ports: 100M and GigEAvailable wavelengths (nm)850, 1310 and 1550100 Base-FX100 Base-LX1000 Base-SX1000 Base-LX1000 Base-ZX1000 Base-BX10-D1000 Base-BX10-USFP+ OPTICAL INTERFACES (10G)10G Base-SR/SW10G Base-LR/LW 10G Base-ER/EW Wavelength (nm)85013101550Tx level (dBm)–5 to –1–8 to 0.5–4.7 to 4.0SPECIFICATIONSELECTRICAL INTERFACESTwo ports: 10/100 Base-T half/full duplex, 1000 Base-T full duplexGENERAL SPECIFICATIONSSize (H x W x D)130 mm x 36 mm x 252 mm (5 1/8 in x 1 7/16 in x 9 15/16 in)Weight (with battery) 0.58 kg (1.3 lb)TemperatureTESTINGEtherSAM (Y.156sam)Network configuration and service test as per ITU-T Y.156sam. Tests can be performed using remote loopback orADDITIONAL FEATURESOptical power measurement Supports optical power measurement at all times; displayed in dBm.UPGRADESFTB-8590SFP modules GigE/FC/2FC at 850 nm, MM, <500 mEXFO is certified ISO 9001 and attests to the quality of these products. This device complies with Part 15 of the FCC Rules. Operation is subject to the following two conditions: (1) this device may not cause harmful interference, and (2) this device must accept any interference received, including interference that may cause undesired operation. EXFO has made every effort to ensure that the information contained in this specification sheet is accurate. However, we accept no responsibility for any errors or omissions, and we reserve the right to modify design, characteristics and products at any time without obligation. Units of measurement in this document conform to SI standards and practices. In addition, all of EXFO’s manufactured products are compliant with the European Union’s WEEE directive. For more information, please visit /recycle. Contact EXFO for prices and availability or to obtain the phone number of your local EXFO distributor. For the most recent version of this spec sheet, please go to the EXFO website at /specs .In case of discrepancy, the Web version takes precedence over any printed literature.EXFO Corporate Headquarters > 400 Godin Avenue, Quebec City (Quebec) G1M 2K2 CANADA | Tel.: +1 418 683-0211 | Fax: +1 418 683-2170 |*************Toll-free: +1 800 663-3936 (USA and Canada) | EXFO America 3701 Plano Parkway, Suite 160Plano, TX 75075 USA Tel.: +1 800 663-3936 Fax: +1 972 836-0164 EXFO Asia 151 Chin Swee Road, #03-29 Manhattan House SINGAPORE 169876Tel.: +65 6333 8241 Fax: +65 6333 8242EXFO China 36 North, 3rd Ring Road East, Dongcheng District Beijing 100013 P. R. CHINATel.: + 86 10 5825 7755 Fax: +86 10 5825 7722Room 1207, Tower C, Global Trade Center EXFO Europe Omega Enterprise Park, Electron Way Chandlers Ford, Hampshire S053 4SE ENGLAND Tel.: +44 2380 246810 Fax: +44 2380 246801EXFO NetHawkElektroniikkatie 2 FI-90590 Oulu, FINLAND Tel.: +358 (0)403 010 300 Fax: +358 (0)8 564 5203EXFO Service Assurance270 Billerica RoadChelmsford, MA 01824 USATel.: +1 978 367-5600Fax: +1 978 367-5700FTB-860 NetBlazer Series Ethernet TestersORDERING INFORMATIONSPFTB860Series.1AN© 2010 EXFO Inc. All rights reserved.Printed in Canada 10/09FTB-860G-XX -XX -XXNotesa. Requires purchase of SFP.b. Requires purchase of SFP+.。

面板型号汇总

面板型号汇总

物理拼缝
22mm 10MM 6.7mm 6.7mm 5.5mm 5.5mm 5.5mm 5.5mm 5.5mm 物理拼缝
20mm 20mm 10mm 10mm
分辨率 1920*1080 1680*1050 1920*1080 1920*1080 1920*1080 1920*1080 1920*1080 1920*1080 1920*1080 1920*1080 1366*768 1366*768 1920*1080 1920*1080 1920*1080 1920*1080 1920*1080 1440*900 1920*1080 分辨率 1366*768 1920*1080 1366*768 1920*1080 1920*1080 1920*1080 3840*2160 1920*1080 1920*1080 1920*1080 1920*1080 1920*1080 1920*1080 1920*1080 1920*1080 1920*1080 1920*1080 1920*1080 1920*1080 1366*768
规格 21.5寸 22寸 32寸 46寸 55寸 70寸 82寸 40寸 40寸 46寸 46寸 46寸 46寸 46寸 46寸 55寸 55寸 19寸 64.5寸 规格 32寸 32寸 32寸 42寸 42寸 42寸 84寸 47寸 47寸 55寸 55寸 55寸 55寸 42寸 42寸 42寸 42寸 42寸 42寸 42寸
42寸 47寸 47寸 47寸 47寸 47寸 47寸 47寸 47寸 47寸 47寸 55寸 55寸 55寸 19寸 64.5寸 65寸 65寸 65寸 64.5寸 80寸 70寸 60寸
5.3mm 5.3mm
22mm 5.3mm

功率计量芯片HLW8012

功率计量芯片HLW8012

SEL 是输入端口,CF、CF1 输出的脉冲占空比为 50%。
REV 1.1
5/9

HLW8012
2.6 极限额定值
数字电源 模拟电源 VDD to GND V1P, V1N, V2P 模拟输入电压 数字输入电压 数字输出电压 工作环境温度 存储温度
参数
符号 VDD VDD
引脚序号 1 2,3 4 5 6 7,
引脚名称 VDD V1P,V1N V2P GND CF CF1
8
SEL
表1 HLW8012 引脚说明 输入/输出 芯片电源 芯片电源
说明
输入 输入 芯片地
电流差分信号输入端,最大差分输入信号为±43.75mV 电压信号正输入端。最大输入信号±700mV 芯片地
输出 输出
数显表等。
1.2 芯片结构描述
HLW8012 的功能框图如图 1 所示
VDD
Internal Clock
Power On Reset
V1P V1N
PGA
V2P
PGA
1k
GND
ADC ADC
Sigma_I Sigma_V
Active Power I_rms V_rms
calculation
Reference Voltage
1.1 芯片主要特性功能............................................................................................................. 2 1.2 芯片结构描述..................................................................................................................... 2 1.3 芯片引脚说明..................................................................................................................... 3 2 芯片特性说明................................................................................................................................. 4 2.1 推荐工作条件..................................................................................................................... 4 2.2 模拟特性............................................................................................................................. 4 2.3 内置参考电压..................................................................................................................... 5 2.4 数字特性............................................................................................................................. 5 2.5 开关特性............................................................................................................................. 5 2.6 极限额定值......................................................................................................................... 6 3 芯片应用......................................................................................................................................... 7 3.1 HLW8012 典型应用 ............................................................................................................ 7 3.2 CF、CF1 的频率.................................................................................................................. 7 3.3 芯片的启动阈值与潜动预防............................................................................................. 8 3.4 内置振荡器......................................................................................................................... 8 3.5 内置基准源......................................................................................................................... 8 4 HLW8012 封装 ................................................................................................................................ 9

星级酒店弱电系统报价单

星级酒店弱电系统报价单

二、现场直接数字式控制器(DDC)
三、现场末端装置(传感器及执行机构)
小计
电视监控系统
序号
1 2 3 4 5 6
设备名称 数字硬盘录像机 液晶显示器 硬盘 室内一体化高速半球型摄像机 高清彩色红外半球 电梯专业半球摄像机
规格型号 HDB-DVR416E 19寸 2T HDB-527PCB-3 HDB-701MM HDB-9003WCB
系统调试
5
6
7
8
9
10
11
12
大口径—1.2m MW-MOD-9631 MW-BLE-L32-*/* 5-1000MHzH通用型(室内型、中号外 壳) 5-1000MHzH通用型(室内型、中号外 壳) 5-1000MHzH通用型(室内型、中号外 壳) 5-1000MHzH通用型(室内型、中号外 壳) 5-1000MHzH通用型(室内型、中号外 壳) 5-1000MHzH通用型(室内型、中号外 壳) 5-1000MHzH通用型(室内型、中号外 壳) 5-1000MHzH通用型(室内型、中号外 壳) 5-1000MHzH通用型(室内型、中号外 壳) SYV-75-5
明月谷酒店楼控系统序号名称规格型号品牌数量单位单价合计一监控站楼宇自控系统设备中央站p4tdell打印机epson1600kepson不间断电源ups05kvasantakinsightsoftware571010siemens通讯接口trunkinterfaceii538675siemensddcmec200mec200siemensddcmec201mec201siemens549210siemens549214siemens10定做11定做三现场末端装置传感器及执行机构12风道温湿度空气品质传感器qpm2162siemens13液位传感器mac3mac14一氧化碳传感器cmd5b2000greystone15风道温湿度传感器qfm2160siemens16风道温度传感器54433918aqm2000siemens17防冻开关qaf813siemens18压差开关qbm813siemens19gbb1611esiemens20gbb1311esiemens21vvg4425sqs65alg252siemens22cvvi414025siemens23cvvi415040siemens24vvf4180skc62siemens25vvf4190skc62siemens26包塑金属软管20国产27网络线awg18国产28电源线rvv3x15国产29信号线rvvp3x10国产30信号线rvvp2x10国产31信号线rvv2x10国产小计电视监控系统序号设备名称规格型号品牌数量单位单价合计数字硬盘录像机hdbdvr416e液晶显示器三星11硬盘2t希捷11室内一体化高速半球型摄像机hdb527pcb3高清彩色红外半球hdb701mm电梯专业半球摄像机hdb9003wcb彩色红外高清摄像机hdb5680yc视频矩阵hdbd2025a25616控制键盘hdbd207810视频分配器hdbd1632v11高清彩色逐行监视器hdbcm21aa12电视墙及操作台1611定制13电源12v2a国产14214球机电源24v2a国产26156kw16视频线syv755国产1100017电源线rvv210国产300018控制线rvvp210国产1100国产40019管材国产400021系统调试22小计电子巡更系统感应巡更棒0compa1602ocom通讯座0compbu320ocom地点识别卡pid2ocom120人员识别卡ocom5

色带通用对照表

色带通用对照表

批发价格
JOLIMARK 映美 JOLIMARK 映美 JOLIMARK 映美 JOLIMARK 映美 JOLIMARK 映美 JOLIMARK 映美 JOLIMARK 映美 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 FUJITSU 富士通 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 DASCOM 得实 OKI 冲电气
打印机品牌
EPSON 爱普生
EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 EPSON 爱普生 JOLIMARK 映美 JOLIMARK 映美 JOLIMARK 映美 JOLIMARK 映美 JOLIMARK 映美 JOLIMARK 映美 JOLIMARK 映美 JOLIMARK 映美 JOLIMARK 映美 JOLIMARK 映美

笔记本电脑最新排名最新笔记本电脑显卡性能排名

笔记本电脑最新排名最新笔记本电脑显卡性能排名

笔记本电脑最新排名最新笔记本电脑显卡性能排名笔记电脑本显卡能排性榜行本行排根榜据 D 游戏3及应用实效际果成,并随生新款显各卡发的布随时更而。

新新日期更2:10 年10 9月0 日排名512 3 5 647 8 9 10 11 1 23 11 451 6 17 1181 9 0 排2 21 22名23 42 522 27 28629 3 03 13 23 型3号AM DRadoe Hn 6D99M0Cr sofirs eNVIIA DeFoGrce TXG 80M5SLI N VDIAI GForeecGT 4X8M 5LS IAMD aRedon H D9760MC rssfiro NVIeDI AeGFroe GcTX470 MLIS VINIDAGeFo cre GX T408 SMILA MD aRedo HD n996M0 VNIIADGeFo rec TGX 805MNVIDIA eGoFce rTX 460G MSI LAT MIoibily RtdeanoH D5 870Cr sosife NVIDrA IGeoFrec GT X845 MNVDIA IGFeoce GTX 5r70MNV IDIA GeFrco eTX G258 MSIL NVDIIA uQdaro5 001M AM RadeDn oDH 697M0A M FiDerro MP980 N0VDIIAGeorFce GTX 20M8 LISAMD Raeon HDd69 50 MAITMo bliit yadRon He D8740X 2NIDIA VQ uadro 0040 型号M NVDIIA eGoFre cTGX 407 MVNIIA DGForce GeX T40M8NV DIA IGFerce oTX 5G06 NMVIDAIGe oFce GrX T602 MSL ITA IobMiltiyR adeo HDn5870 NVIDI QuadAo r0500 AMT IFrePir o782M0 MDAR aden oHD68 0M 7VINDAI GeFroce 890M G0XTS LI NVIIA DuadQo 3r00M N0IDIA V eFoGcer GX T40M6N VIDAIQ udro aF 38X0M NV0IDI GeAForec GTX 825M6 7 675 5765125 010 0 1000 2心核率频(HzM )17 6520 75 5860 55 3245 157620 76 507057 5 57 557 4560 86 600858 55 8055 0 75 核4频率(M心H) z55 425 7357 50 705 4050 070 765 05 显存频0率MH()z 00 915001500 9 001 205 210 900 0510 10520 100 1500 0110 5012013 00900 09 0950900 8 8 1280 显0存率频(MHz 12)0 1205 01502 50 91000 2001 010 1000 8000显存位(宽Bi)t 5622 5625 62 56 129 5622 5 625 612 19282 56192 25 6526 56 2256 25 62652 562 5 显6存位宽( Bit) 19 22651 2 295 1682 26 512 18822 5625 619 2 25 2656 持D支reict 版制造X艺(工纳本11 1 11 111 111 1 1 11 11 11111 11 0 11 11 1111 01 1 1.1 10 米)140 4 040 40 40 40 4 400 4 4004 0 0455 4 04 00 4554 05 540支D持ierct X版制造工(纳艺本1 11 1111 10 111 1 11 10 11 11110 10米) 04 4 4005 54 0404 04 650 40 4055 55433 536 73 8339 4 0 排名41 4243 4 454 6 4474 4985 051 2 553 45 5 55 67 558 95 0 排6 6名162 63 646 56 66 67869AI TMboilty Raiedo nH D8470 NIVDA GIeorFceGTX 2 08MN IVDA IeGFroc e980M GT0SL IN IVDI GAeorcF 9e80M G0T SLI ATSIMobi liyt RdeoanHD 370 82 XNIDIV AGeFo cre88 00 MTGX SLIATI M boliti yRdeon aH D850 32X型号N VDIA IuaQdroF 370X0M TI AMoibitylRa denoHD 48 60 TIAF iePro rM7704A T MoIbliity aReodn D 48H50N VDIAIGe oFce GrXT 260 MNIDIV A GFeorc 98e00MG T XNIDIAVQ udraoFX 820M0 VNDII AeGFocr GT 5e5M5 MAD Rdaone D H677G52AM D aRdoneHD 6 707M AMD FiePrro 59M05 AI MoTbiiltyR aeodnH D58 05A DM Rdaeon D H680M5 VNIDAIQ adrou2 000 NMIDVI GeAoFrce 9800MGT NVIDAIG eFrcoe 800M8 TGXN VIDIAQ udao rF X6300 MVNIID AGeorFc eGT 45M NVI4IAD GeorFec TGS 630M AM DRdeoanH D 65572 G型AM号RadDeno D 67H0M 5VNIIDA GeoFrc GT e 550 MNIDVIAGe Frcoe TS 260GMN IVID GAeoFcreG T S106 MVNDIAI GeorFc e890M0G TS AD MRadoenHD 68 0M 3ATIM oilityb adeoR nHD58 30AMD RaednoH 67D602G AM DadeRno DH 740G65520585 5 006 006 6 0050 805 心频率核(Mz) H50 650 5605 5005 05 50 60005 98088 95 008 0800 508 800 750显存频率(M Hz) 08 10000 100 050 985 00801 00 009025625 265 2656 256256 2 56 显存位宽(iBt) 56 1282 1282 6526 556 256 129210.1 1001 0 1011 .0 11.01555 5 56 556/ 55 56 555支持Dire tXc版制造艺工纳(本10 1.1 0101 .1.0 11 10 10 1011 米1 )5 604 04 55 5 55 55 6404 04 04 00 404 4065 65 56 4 0404 072 525 7265 55 7/6 575 5 0500 00550 05 90575160 009 0200 800090 080 0800 008125 081001281 8 1228 28 1218 26 5265 265 19 2 1/2 81811211 11 1 11 110 10 01 111 01 11核.心频(MHz率600 7)0 450 605060 05 5 7005显存频率(MHz )0909 00 80108 008 00900 080显位存宽B(ti 1)28 12 182 85622 56 281 128支持DiectrX 制版造艺(纳本工1111 10 1 1. 1001 11 1111 1米) 0 44 40 05 55 /565 4 040 4 4007071 72 73 7 74 75 76 7787 980 名排81 2 83 8488 865 7 888 9890 91 2 99 93 45 99 97 689 99VNIDI AGFoece 9r08M GS0 ATI MoilibtyR daen HD o430 AM8 DRaeodn H D670M3AT IobiliMtyRa eodn H 57D07 MADRadeon H D5670M NIVID GeForcAe TS G51M NVI0DAI GeorcFe 808M0 GST AITMo iblti Rydaon eDH 5750 MDAR daone H D627G02NV IDAI eFGroe GcT54 M0NV DII AuadQor 1000 型M号AT IoMbliityRa doneHD 57 03A I TFieProrM 800 5AM DadRoen D 6690GH2AM DR dean oDH66 50MNV IDAI eGoFre cGT4 35 AMD RMadoe nDH 66802 GADMR deon HDa6550 NMVIDIAGeF rcoeGT S 503 MVNDIA IeFGorc GeT S50M2 MD ARaeond H 6D306 MNIDIV AQudaro XF1 800 AMT MIboliti yRadenoH D655 0MD RAadeo nH 6530MD VIDIN AGFerce oTG5 25MA T IoMbliit yaReodnH 5D65v TI MobilAtiyRa deo nDH4 607 VIDIA NeGoFrec T G42M N5VDIA GIeFrce o900M7G STAM DR adoe nDH6 4652G35 5500 27 5560 60 4500 0505 500087 00 800 080 00 900 8008 160025612 188 128 122825 62 6512 81 1001 11 1.1 111 00.10 1 1115504 0 4404 0 5 55 60 44 4004 06279021 821811 11心核率(MH频z)6 50 650显频率存( HzM 80) 008显位宽存( Bti) 28112 8支持irecDt 版X 造工制(纳本艺11 1 111 )米40 404 004404 040 0 44 004 4 004 4 0045 555 406 5046560 06059008001281211 18111600 50 5000 845 5064 5-060 55006 00 65 776 56055 3090 0106 061008 0 100108 00 8009 008 0 8000 00 8800 218 182 28 118 2281 218 12 818 1282 28 128 215161 0.1 11.01 11 011. 1 11 1111 .0 110.11 1011110 NVI0IA QuDarodF X 270M0 排名型号530 核频心率(MzH)4 05 66800 显存频率(Mz)H1 60 8605256 显存宽位(Bit) 12 85621支持Di ertc 版制造工艺X纳(本 1.1 01.10 1 1)米4 505 04 32 55011 VNDII AeFoGcr eTG 335 102 MATI oMilitybRa doe nH D830 170 AM3 DRdeon aHD66 042G 014 MA DRaedonHD 6620 10G AT5I Moibity lRdaoe nD H516500 4060 90 108211 011.10A6I TMbiloiyt Rdeaon DH56 0v1 0 AT7I Mobilti yRdaeno HD4 6501 8 0NIVDAIG Feroce oG79 0 5TXGS LI 10 NVI9DAIGeF orc eG o9070 GT SLIX 11 N0VDIAI GeFrceGo 42TM0 11 A1ITMobil ti yRaedn oDH38 50112 NIDVI AeGForec GT 303M11 3NVDIA IuQdaorFX 80M 1184 NIDIA VuadQo rVSN51 00M 15 N1IDV A GeIForec T 240MG11 6N IDIV A GeoFcreG o 9705G XT 171 VNDIIAQu drao X 35F0M011 8NVI DAIGeF roce 7800 GMT SIL11 9N IVIADG eFroe 97c00 GTM1 2 0VINID AGFerce GoT2 3M0 排名型5号50 55 075 550 500 05805 5 7550 50 555 5750 7556 5 6252500 核频心率(HzM )504080 00 800 700 806 750 0016 690 708 8000 7007 0 800 00088 0 0显频存率MH() 6z0012 8128256 25 1682 56 1228 12 82181 82 26 25561 8 128 2182 显存位(Bi宽)t 12180.110 1 9c 9. 11c1 01. 0.111 .1 1001 .1.10 9c c9 1 1001 01.55 5 90 59 004 5540 0 4404 090 09 0 85640支持ireDct 版X制造工艺(纳本10 . 11 11 11 1米) 5 50 40 4400 44 40 0110 0 80 59540 0990 80 55 0 86580 10111 A2I T obiMliy tadeRonH D50v 512 A2M RDdaeno H D56452G13 A2DMR aeod HD n540G2 124 AMD R6dean HoD 655G121 52A M DRaedonHD 649 0M 126 NIDVAI eGFrce GT o 23M 157 N2VIDI AeGForec G T205M X182 NVIIDAG eFocr eG 7o008G X SLT I291 VINDIAGeF ocr e608M G0TSL I 301N IVID AeFoGcreGo 790 0S GLI S31 NVI1DAI eGForc Ge 13T0 M321 NIVIAD NSV 240M 0313NV DIIA eFGroe co G7900GT X1 4 N3VIID QuAaro FXd2 00M 153 5NVIIAD eGoFrce 6905M GS 136N VDIAI GeoFcer965 0 MGT 31 7VIDIN AeFGorce87 00MG 13T8NV DIIAQ udroaFX 7100 13M 9VIDNI AQaudo rX F600M1 14 N0IDIA V GFoere Gco7 08 0GT X 名型排号70 0 7/50/ 8 0 008 450 090 044 07453 5 706 8100 50 0050 2655 0 5625 25 66254 40核心频(率MzH 3)7 5016 9060 505700 5 00 106 60086 00 6008 008 0 800080 0800 505显存率频(HM)z50064128 6 425 126 256 8128 6 245 256 6182 18212 8182128 256 显存宽位( Bit 2)51 1101 .1 1c910 c 1091 1c9 c9 0 1101 0 011 09c支持Drecit X版制造工艺纳本( c9米) 941 N1IDVIAGe Foce Gro 7090GS142 VNDII QuAadr NoSV32 0M143 NV DIIA uQardoFX 501M 1044 VINDI AeFGrceo 6900 MT G451N VIDAI GFoecer GT 202M 164N IDVI AQadruo XF 770 1M4 7VNIIA GeDorFe cTG 20M 141 AM8 RadDen HD 6o51G02 49 1MDA adeoRn H 74D05M 51 AMD 0aReod HD n4706 M11 NVI5ID AGFoecre G 5T20M 512 AI T obMilityR daen HD o376015 A3TIM obilityFireG L57V5 1245A MDF ierPr M3o900 155 MDAR adoe nD H5602 G51 6NVIIA DeGFrceo 302 M51 7VIDIA GNeFocreG T302 1M58A I TMobliiyt aRdon eDH2 600 TX159 AITMobil ti yRaeod n19X0 160 0TIAMobi lty iRdeaonX 800X1T排名号型57575 530 0500500 50070 005 0800 08080 0 1000128 25 621 128 182 8121089 c1 0 0 110 01 1180 0 695 6 56 555 0 440 04 04 5 55 45 02 40340 65 80 9 04 600 /7750 40 7 6/006 80 6806 0 800 440 5050700 400 550 核心率频(MH)z 45 450040 0 30 475 4444 70 500 700 7550 400 600 006720 7 0 628 6000 66 045 700 7070 009 80 800 080 008 070 018 1282 466 4 64 4 64 126 780 080 0008 100 1882 18 24 64 7960 7504 0 7650显存频率(M zH 5)00 60 05508 007 00 28 1281 526 52 显存6位(B宽i) 2t65256 2 6512 828 8010800 / 90 8000 008 9006 464 / 28112 821 6481 11 11 11.101 01. 1 1111 .0 10.111 0 9 c9c支持Di retX c版制造工艺( 本纳c9 9 cc9 01 0 11 11 1101 111 11 1.1 010. 10.11 01. 101.1 1 11 101 米9) 030111 065 0 832 5640 40 40 2 55 55 35555 55 4 400806 ATI1M bolityiR deoanX 810 162 0VINIA GeDoFce Go 6r08 0ltUra 16 3VIDNI AGeForceGo 8007 164 VINIA DeGoFre 9600cM SG165 NVI IDA eGorcFe 5900M S G616AMD adRen HDo 4680 G61 A7ITMo ilitbyR deao nDH270 0 618 VNIID AGFeroe cTG415 M 69 AMD R1aeod nDH 673M0170 ATI Mobiliyt aRedonHD 5470 17 1AM D aRdone H D3608G172 T A IMbiolit RaydoenHD 635017 3ATI Mobi liy FiretG VL700 1547A I T obMiilytRa eodn H 51D5 1457ATI oMibilyt aRedon DH 55v 476 1TI AMoilibt RydeonaH D4 5701 77 AD MaRedo nH 6D504M 178 NVIIADGe Frceo 40M1179 NVID A QIudroaF X 75M108 AT0I MoibilytRad eno D H450 5 排名型号756核心频率( Hz) M47 550 3005-351 026 6056 /65 22656 0 60065 0 500 600053 5540 00 333 4800480 5 5 5005 505 核频率(心MH) z50 500 0540 50 545 425 4007 640 54 4500 00445 04 2 5530375008显存频率M(zH )7006 006显4存位(宽itB )12 12881410持支 D irceXt 版制造工(纳艺本0 101 1.01 米)8 60532 4 400 40 044 90 0658 00 804 3101 30 310 0 40 5545 511 N8VDII AeFoGcer 8600 GM T12 8TAI Moilbti Raydon eD 26H0 1038I ntl He GraDphci 3s000184 VNIID QuadAo Fr 3X0M8 18 5VIDINAGe Froec3 10 M16 NVI8IADGeFor c Ge120 1M7 N8VDIA NVIS3 100 1M88N VIDA GIFeocre315 M819 NIVDA IeFGorc Go e7060G T19 N0IDIA V GFoecr 95e0M 0G1 19N VIDA GIFeroc e806M 0GS 921N VDIA NIS 210VM01 9 3NVDIA IGFeroecGo 7 700 941NVI IAD GeFore coG6 8001 5 9VNDIIAQua dor F Xo G1400 16 9TI MAobiltiy Raedon 8X00X 1T79 MDAR aeodnHD 64 30M981 AI T oMilbtiyRad en HD o430519 9A TI Mbioityl RdeanoH D504v20 A0ITMobi ily RatednoHD 4 55 排名0号型00 8080800 80 0907 060 8007 0 800 500 300 0050 50 80508 00 080700 显存频率MHz( )8009-0 070 600 6000 07 0400 33 4000 503 50 0350 74 047 3500 3064 0466 46 446 28 121 8128 4 168 1228 256/ 52 2566 46 4 6466 4存显宽位(iBt )6 44 664 466 128 128 644 /12 1882 /6 128 1284/ 26 5281 18 22561 280.1 10.1 11.1 00.11 101 .9 c1 10 1001. 9c9c 9c b91 1 1 101. 1101.持支DiretX 版c制工艺(纳造本 1 110. 1011. 101 .1.10 c 99c9c 9 c9b 9b 9c c9 99c )米40 5 555 5540 0990 8 900 09 31 900 9 1003 101201 ADM aRedn HD 6o53M0 202A TIMo biity Rldeoa Hn 4530 2D0 3AT IMobiily tRadoe HDn 3450 20 A4TI Mbioily Rtaedon D 530Hv 250 VNDIAIG Feocer 03M 256 0TIAMboiilyt RdaenoX 107 2007 AI MobTlity iFreGi VL2505 280AT I oMbliiy tRaedonX 2050 20 NV9DIA IGFeroc Go 7e006210 N VIID QuaAdo NVrS 003M 12 AT1 MobilItiyR aeondX800 2 12 TIAM bioilyt aRdenoX1 06 203 1ATI MbiloityF reGiL 5V20 014 2AI MoTilbiyt adReon98 0 015 NV2IIDAG eForc eoG660021A6I TMobiltiyR aeod X1n50 2471 AT IMbiloti yRaeod X700n 218A IT obiMliytF ireL GV0500 192 VNIDA IGeFrco eG1 1M 0202A M DadeoR nH 6D33M0 排名型号550 30 530 5400 00 5核心频率M(z) H405 40 504 850 /011 0-1035045035 0 35 070 0800显频存率MH() z0066 0 00701281 821 82 6 64 显4存位(Bi宽t)6 428 1649c9 9 01 119010 110155 40持支irDceX t 制造版艺工纳本10(.1 10 0 10.11 1 0)米5 80 850 2 35 655 6 5566 655 6 325212 AIT Mboliit yadeonRHD 3304 22 N2IDIV AG eorceF 840M0G T232 VNIIADQ uarod NS 1V0M 224 I4tnle DH raphGisc2 00 0225 NVIIA DGFeroec G 170M 262NVI IAD eForce GG105M 2 7 2NIDIA VeGFrco e G103M 282 NIDVIA GeoFcre9 50M0 EG2 9 N2IVDA IGFoerc eG 021M2 30NVI IADGeF rce oG20 M5 321NV IDIA GFoecer 900M4( G ) ION/(L E) 23 2IneltH DrGaphic (sanSdy riBdeg)2 3 V3AI Chrom9eH D234A MDR dean Ho 6D2032 53A M DRdeon aD H63102 3 ATI6Mobil ityR deao HnD 3407Hyb ir dX 2372 VIDNIAG Foerc 9e40M 0GeFocreBosot23 8TAIMo biltyi adeoRn H 3D70 429 N3IDIV GeAorcF e900M 3G 204 NIVIDA OIN 排2名型6号4 06400705 00646 4640 1010.1 .0 010.01 100. 00.1 11.01405 504450 30 - 510015006-0 05011 01 10.116 41 10.1010 1 01.404 0 556 555 0 84068040008 00064664 64显位宽存( itB )6 46 44664 6 44 64 64604 / 4755 / 55 793 核心频率0M(Hz)5 05 85058 0 55 050 040 45006 005 09500 存频显率( HzM 7)0 0700700 700 7 007 0070 7000支持Dricet X版制造艺(纳工本0110 10 0 1011 1.01.10. 11 001. 11.01米) 65 65 5665 55 55 5 65 555 55412NVIDI A GForcee9 30M0 GS24 2VNIID QuAdao FXr 730 M243NVIDI AuaQrdoN V 1S06M 244 VNDIIA eFGore 9200Mc SG245 AT IMoilibty aRedo HD n430 526 A4TI obMiiltyRad enoH D343 0247 T A IobMlitiyRa eod HnD 314 2480 TI Mobility RAaden Ho D420 X0T2 94AT I Rdaoen D H47022 5 0T AIR adenoH 425D021 A5DM RadenoH D 2906 22 A5TI aRedon D 42H0 0253 ntIle Grphacsi eMiadA celerctao (GrMA )D GHrphiasc280- 040 05 500 082 030 5004 47 045 440 450 核心0率(M 频zH 400)4 5 500 080 350 6030 显频存率(MzH 6)0 050 04 6显位存宽B(i) 6t4 4 607 600 0305250 46 641 2 18821110 . 101 1 10110 9c 9 c0 101455045 4 60 50 89 90 605 054 AMD aRedn HoD 260525 N5IVIDA QaurodNVS 150M2 5 N6VDII AQaduro FX360 257MA TI Moiblti RyaeondX1 50 352 A8IT MbilotyiRadeo nX1 400259 VNIIA GeDorcFe 1900MG 2 06N IVID AGeorFc 8400e GM S排名型号支持 D reciXt 制版工艺造纳( 本0110 10 101 .011.米8)0 655 5555562 1NVDIAIQ udroaN S 1V3M5 622A ITM bolityi aRdoenD 2H00 423 6TAIRa edo nDH32 0 2640 AT RIdaoe HnD 42522 6 ATI R5aednoH 41D00 26 A6I T oMilibtyRa edo nHD34 0 2670 AIT adeoR HDn 1300268 NIVIAD eGoFre c8004 MG 62 9VNIDAIQu drao NSV 310 M70 N2VIIA DGeFrce 820oM0 G27 In1el Gtrphiac Msdeia Acceleartro GMA)( 400M7DHI telnGra phics eMidaA ceclearot (rGA)M 4500MHD35 400 006 70004 0 04600 6 44601 1 001 01 1008 80 80 652753231 010665 95 90 90090 90 13 100323 7nItelGra phcisM die acAeleracotr( GM)A 4005 M00 424 NVID7A GIFoecreGo 7 40 0725 VIDNIA uadQro F X305M 276 VNDIIAQ audo rNVS 102 M772 NIDVI GAeoFrceGo7 03 072 8NIVDA IQudro NVSa 11M0 29 ATI Mo7biltiyRad oneX6 0 082 AT0IMo ilbtyi FreiG VL300 2排名型号4 50 54 400 55033 0040 040 核心0频(率HMz )50 3840 408 显存率频MHz)(2 0 4000 040 504 50 370 00076 00 5206 4 /3 26 464 64 6 148 218 显2存宽(位iB) 12t8 18 12892c c9 c9 c 9c 999支持Direct X版制造工艺( 本9 纳9 9c c米110 )80/ 9090281T A MoIbiliytF riGe VL1030 28 A2I TMbilityo adeon RX2030 283 AI TMoility baRdon eDH23 00284 AI T obiMitl Radeyn o790 285 A0T IMoibily FirteG TLe2 286ATI obiMitl Radyoe X13n00287 NV DII GAForce4 42e0 0Go2 88ATI obMiltiyRade on 6900 289 AI MoTbiliytF reGL i2T29 0 TI MAoilitybR daeo 95n0529 1VNDIAIGe FroceG o72 0029 2N VIDAIG eFrco Geo6 400 23 ATI9 oMilbiyt adReno X003 249N VDII GAFoecr Ge o652 2095 VINIAD eGForecGo 6200296 VINID GeFoArceFX G o750 2097N IDIV A uaQrdoF X oG1 000 289 VNDIAIGeForc FeX o G560 0/5 560299 A TIRad on Xpeessr X170 3002A TIR deaonXpres X12s05排名型号540 504 3502 0 000 330 200 45014 00 305 004 030 54075 2620 520 2003 0 2000 83135 0 30 255 3050 030 27518 / 64 12821 8 221 1288/ 461 8264 32 6464 4 646 281 1829 9c98 1. 99 99 cc99 9 c c 99 99 9913 100 39 051 1003 301 13 900 11 1003 11 101 030 11301 50/ 10 830 08350 00 4305 心核率频(Mz) 40H 305050 046030182存显率频MHz()显存位宽( iBt)支持DrecitX 制版工造(纳本艺9 米)8 80 0903 90 29 010 1110 11 00 923 510 501150 5101 50 510 501 510 54301AT IR daon Xepress 150 230 A2I TRdaoen prXsesX1 20030 I3tnel Gaphirs cedMiaA cceerltoa rG(A)MX3 100 034I net Grlphacs Mieida cceAerltao r(GMA) 650 3053N VIIA DGeForce 197M 0360N VIIDA eGoFcre 7510M 07 3T A IRaeondXp esrs1 501 083 VNDIA GIeorcF Geo 1650 03 9VIDNI GAForce Geo 61003 01N VIDI GAeoFrc e700M 0311I ntl Geaphrcs Midea icAcelraetro G(MA) 360 312 ATI 0Mbiloity adeRo 9n00 2133 AITM obiltiy iFreG L090 3041NVIDIA GeoFre FXcG o52 0 3105 T A IobiMilytRa deon 9000 13 N6VIIA GeForDec4 488Go 31 7NIDVAI eFoGcer4 460Go 18 3NIDVI GeForcA e 4404 Go319 VNDIAIG Ferce 4o42 G0 o302 nIet lrGpahcsiMed i Aacelecrtaor( GMA)3 51 0排型号0019010 1. 9c25 4040 42 542 5305400 20 250 530 0402 27 255 202019000 核2频率(心HzM )显频存率存显位宽200 200 03 000 22572 0 2250 2001 8 122 188 12823 23 32 32 20 0 0 0 0 000c 99b9 c c 99 10.1c8. 1 8. 91 .18 77 77 9c支Dir持ceX t版制造工(纳艺名32 1ntIe GrlahicspM diae Aceclraeotr (GMA) 9053 2 AT2I obMliiy Rtdaoe 750n 033 2ATIMo iblti yiFeGLr 700 3284 Itel Gnarhpis ceMda iccAleertar (oGA) M90 305 2TI ARdaen Xpreos 20sM03 62AT RadeIn oXprse 110s03 2 7SS MIraige +367 2MX 28 SI3S Mirgea3 6 71XM32 P9woreR VSGX43M5P2 330 nIet lGrahpis cMdiea ccAelreaotr(G AM )006 313Pow rVeR GS540 3X3 2Inte lrGpahcs iedMaiA ccleeartor G(MA )050 333P weoVRr GSX355 34 NV3DIA IGeorFe 3c o G35 3VINDAIG Feorc 2eG (o200/ 1 00 )336AT I oMiblit Rayedon 100 9IGP 337A T MobiIity Raldoe 9n000I PG 33 8TI AMboiilytR aeon M7d3 93AT IM bioliyt Radoe Mn634 0V AIChro e9m CH314 Itel Enxrteem Grphaic s 3422AT MIboiilyt adeonR700 IG0 P334ATI aRdeonIGP 34 0M 34 ATI4R aedon GIP 20M3345 IA V 3S GnUiChromeP or I 34I 6IA V S3G UniCromeh Por347 V AI CstlaeR oc 34k8 SIS irMga e 2760M3 4 9ISS iragM e6M6F1 35X 0IA V3 GSrahpics PoSraaveg83 5 A1I TMboiilt 1y2 83 M35 2ilSicn oMoito SMn02 553 unkn3wno 0021 33121 105 1 0 816 020 4000 20 200 00022 501 6 6400 00323 066 25011 3325 02 0 828 40003 5 000 250 2503(Mz)H0 002 20 000(it) 0 B6 4 /12864 / 21 8 000本c97 7 9c b 99 b 9.18)米1031 50 81 031 10301 0140 10.41 45 1501 1.3 05 324/ 64 / 1 28143 3 / 26 7 7 8.4 01 81 166 30 46 23 .8 1 779 0 0 0 0 0 80 7 777 7 50 181 108 150 108801.7015646百度搜索“就爱阅读”,专业资料,生活学习,尽在就爱阅读网,您的在线图书馆。

讯飞网维 信号特克 千兆以太网性能测试仪 说明书

讯飞网维 信号特克 千兆以太网性能测试仪 说明书

SIGNAL TEK™Cable Performance T esterI Gigabit PerformanceQualification – Test toIEEE 802.3 standardsI Selectable PerformanceT esting – qualify performanceof Data, Voice over IP, andIP Video applicationsI Performs Gigabit Ethernetlink establishment test in10 secondsI Data Monitoring to detectintermittent network problemsI Smart Autotest Functiondetects the presence of theSIGNAL TEK remote, activenetwork device or open endedcable and automatically runsthe appropriate test suiteI Intuitive Graphical UserInterface for fast andeasy operationI Internal and USBData Storage –store 20,000 tests internallyor unlimited on USB driveI Prints Easy-to-Read Pass/Fail Qualification ReportsSIGNALTEK™– High-Performance Gigabit Ethernet TestingSIGNALTEK™is the most cost-effective Gigabit Ethernet cableAutotest key to initiate tests from the remote end for one personoperation2.8Љ(7.1cm) 1⁄4VGA Color Display with backlighting for use in low light conditionMulti-color LEDs indicate link status,loopback mode,10/100 and Gigabit device detection,Autotest pass/fail,and battery conditionEasy-to-navigate user interfaceCompact design and soft over-mold sides fit well into any sized handContext sensitive softkeysSingle button cable testingQuick navigation key returns to Job Manager screenSingle button push for active network testing and monitoring Port status function detects 10/100 or Gigabit Ethernet devicesDisplays result for last autotest via red or green LED indicationSIGNAL TEK ™Standard KitCatalog No. 33-974I1 SIGNALTEK ™Near-end and remote-end handset IDEAL INDUSTRIES, INC.03/06Printed in U.S.A.ISO 9001:2000 QMSNo. 33-974SIGNALTEK ™OptionalPower Adapter – 4010-00-0136DESCRIPTION CAT NUMBER SIGNALTEK™ Cable Performance Tester 33-974Replacement cable accessory kit –Contains all original cables in SIGNALTEK™ kit 1219-91-0003RJ45 to 8 head alligator clipK-7920OPTIONALUniversal (120-240V) AC-DC power adapter (1)4010-00-0136。

AIG-500 系列高级物联网闸门器产品说明书

AIG-500 系列高级物联网闸门器产品说明书

AIG-500系列進階IIoT閘道器,配備Intel Atom®四核心1.91GHz處理器、1個VGA連接埠、ThingsPro Edge軟體、-40至70°C工作溫度特色與優點•ThingsPro Edge軟體簡化資料採集和裝置管理•ThingsPro Edge和Azure IoT Edge的無縫整合可實現簡單、可靠且安全的雲端連線•支援使用ThingsPro Proxy工具程式輕鬆部署裝置•提供強大的OTA功能,防止軟體升級過程中出現系統故障•配備安全啟動以防惡意軟體注入攻擊認證簡介AIG-500系列進階IIoT閘道器專為工業物聯網應用而設計,特別適用於嚴苛操作環境中的分散式和無人站點。

ThingsPro Edge和Azure IoT Edge軟體已預先載入並與AIG-500系列無縫整合,使用Azure雲端解決方案實現簡單、可靠、安全的感測器到雲端連線,用於資料採集和裝置管理。

使用ThingsPro Proxy工具程式,裝置部署過程比以往更容易。

由於強大的OTA功能,完全不需要擔心軟體升級過程中的系統故障。

啟用安全啟動功能後,您可以啟用AIG-500系列的啟動程序,以防惡意軟體注入攻擊。

外觀規格ComputerCPU Intel Atom®Processor E3845(2M Cache,1.91GHz)Graphics Controller Intel®HD GraphicsDRAM4GB DDR3LStorage Pre-installed32GB CFast GB eMMCPre-installed OS Linux Debian9,Kernel4.9Computer InterfaceTPM TPM v2.0Ethernet Ports Auto-sensing10/100/1000Mbps ports(RJ45connector)x4Serial Ports RS-232/422/485ports x4,software selectable(DB9male)Digital Input DIs x4Digital Output DOs x4USB2.0USB2.0hosts x2,type-A connectorsWi-Fi Antenna Connector AIG-501-T-AZU-LX:RP-SMA x2Cellular Antenna Connector AIG-501-T-US-AZU-LX:SMA x2AIG-501-T-EU-AZU-LX:SMA x2AIG-501-T-AP-AZU-LX:SMA x2GPS Antenna Connector AIG-501-T-US-AZU-LX:SMA x1,AIG-501-T-AP-AZU-LX:SMA x1,AIG-501-T-EU-AZU-LX:SMA x1Number of SIMs1Expansion Slots AIG-501-T-AZU-LX:mPCIe slot x1SIM Format MiniVideo Output VGA x1,15-pin D-sub connector(female)Ethernet InterfaceMagnetic Isolation Protection 1.5kV(built-in)Serial InterfaceConnector DB9maleBaudrate300bps to921.6kbpsData Bits5,6,7,8Flow Control ADDC®(automatic data direction control)for RS-485,RTS/CTS,XON/XOFFParity None,Even,Odd,Space,MarkStop Bits1,1.5,2Isolation N/ASerial SignalsRS-232TxD,RxD,RTS,CTS,DTR,DSR,DCD,GNDRS-422Tx+,Tx-,Rx+,Rx-,GNDRS-485-2w Data+,Data-,GNDRS-485-4w Tx+,Tx-,Rx+,Rx-,GNDDigital InputsConnector Spring-type Euroblock terminalSensor Type Dry contactDry Contact Off:openOn:short to GNDIsolation NoneDigital OutputsConnector Spring-type Euroblock terminalCurrent Rating10mA(max.)total for all channelsI/O Type SinkIsolation NoneCellular InterfaceCellular Standards LTE CAT-4Band Options(US)LTE Band2(1900MHz)/LTE Band4(1700MHz)/LTE Band5(850MHz)/LTE Band12(700MHz)/LTE Band13(700MHz)/LTE Band14(700MHz)/LTE Band66(1700MHz)/LTE Band71(600MHz)UMTS/HSPA Band2(1900MHz)/Band4(1700MHz)/Band5(850MHz)Carrier Approval:Verizon,AT&TBand Options(EU)LTE Band1(2100MHz)/LTE Band3(1800MHz)/LTE Band7(2600MHz)/LTE Band8(900MHz)/LTE Band20(800MHz)/LTE Band28A(700MHz)UMTS/HSPA Band1(2100MHz)/Band3(1900MHz)/Band8(900MHz)Band Option(APAC)LTE Band1(2100MHz)/LTE Band3(1800MHz)/LTE Band5(850MHz)/LTE Band8(900MHz)/LTE Band9(MHz)/LTE Band18(850MHz)/LTE Band19(850MHz)/LTEBand28(700MHz)UMTS/HSPA Band1(2100MHz)/Band5(850MHz)/Band6(800MHz)/Band8(900MHz)/Band19(800MHz)GPS InterfaceReceiver Types GPS/GLONASS/BeiDou/Galileo/QZSSAccuracy0.8mAcquisition-147dBmSensitivity Cold starts:-145dBmTracking:-160dBmLED IndicatorsSystem Power x1Storage x1LAN2per port(10/100/1000Mbps)Serial2per port(Tx,Rx)ThingsPro SoftwareThingsPro Proxy Utility YesAzure IoT Edge Preintegrated YesThingsPro Edge Preloaded YesPower ParametersInput Voltage12to36VDCPower Connector Screw-fastened Euroblock terminalPower Consumption30W(max.)Input Current 2.5A@12VDCReliabilityAutomatic Reboot Trigger External WDT(watchdog timer)Physical CharacteristicsHousing MetalInstallation DIN-rail mounting(with optional kit),Wall mounting(with optional kit)IP Rating IP20Dimensions132x122x87mm(5.2x4.81x3.43in)Weight1,340g(2.95lb)Environmental LimitsAmbient Relative Humidity5to95%(non-condensing)Operating Temperature-40to70°C(-40to158°F)Storage Temperature(package included)-40to75°C(-40to167°F)Shock IEC60068-2-27Vibration IEC60068-2-64Standards and CertificationsSafety EN62368-1,UL60950-1EMC EN55032/35,EN61000-6-2/-6-4EMI CISPR32,FCC Part15B Class AEMS IEC61000-4-2ESD:Contact:4kV;Air:8kVIEC61000-4-3RS:80MHz to1GHz:10V/mIEC61000-4-4EFT:Power:2kV;Signal:1kVIEC61000-4-5Surge:Power:1kV;Signal:1kVIEC61000-4-6CS:10VIEC61000-4-8PFMFRED EN300328EN301893EN301489-1/17/19/52EN301511EN301908-1EN303413EN62311Green Product RoHS,CRoHS,WEEEHazardous Locations Class I Division2,ATEXMTBFTime441,032hrs(AIG-501-T-US-AZU-LX,AIG-501-T-EU-AZU-LX,AIG-501-T-AP-AZU-LX)453,637hrs(AIG-501-T-AZU-LX)Standards Telcordia(Bellcore)Standard TR/SRWarrantyWarranty Period3yearsDetails See /tw/warrantyPackage ContentsDevice1x AIG-500Series computerDocumentation1x quick installation guide1x warranty cardInstallation Kit1x power jack尺寸訂購資訊Model Name CPU RAM Storage TPM mPCIe SlotOperating TemperatureAIG-501-T-AZU-LX 1.91GHz4GB32GB Built-in Reserved for Wi-Fimodule-40to70°CAIG-501-T-US-AZU-LX 1.91GHz4GB32GB Built-in US region LTEmodulepreinstalled-40to70°CAIG-501-T-EU-AZU-LX 1.91GHz4GB32GB Built-in Europe region LTEmodulepreinstalled-40to70°CAIG-501-T-AP-AZU-LX 1.91GHz4GB32GB Built-in APAC region LTEmodulepreinstalled-40to70°C配件(選購)Power WiringCBL-PJTB-10Non-locking barrel plug to bare-wire cableMini DB9F-to-TB DB9female to terminal block connectorWi-Fi Wireless ModulesUC-8200-WLAN22-AC Wireless package for UC-8200V2.0or later with Wi-Fi module,2screws,2spacers,1heat sink,1pad AntennasANT-LTEUS-ASM-01GSM/GPRS/EDGE/UMTS/HSPA/LTE,1dBi,omnidirectional rubber-duck antennaANT-LTE-ASM-04BK704to960/1710to2620MHz,LTE omnidirectional stick antenna,4.5dBiANT-LTE-OSM-03-3m BK700-2700MHz,multiband antenna,specifically designed for2G,3G,and4G applications,3m cable ANT-LTE-ASM-05BK704-960/1710-2620MHz,LTE stick antenna,5dBiANT-LTE-OSM-06-3m BK MIMO Multiband antenna with screw-fastened mounting option for700-2700/2400-2500/5150-5850MHzfrequenciesANT-WDB-ARM-02022dBi at2.4GHz or2dBi at5GHz,RP-SMA(male),dual-band,omnidirectional antennaANT-GPS-OSM-03-3m BK3dBi at1575.42MHz,SMA(male),omnidirectional magnetic-base passive GPS antenna,3m cableANT-GPS-OSM-05-3M26dBi at1575.42MHz,SMA(male),omnidirectional active GPS antenna,3m cableDIN-Rail Mounting KitsMC-1100DIN-Rail Kit DIN-rail mounting kit,4screwsWall-Mounting KitsUC-8200Wall-mounting Kit Wall-mounting kit for UC-8200with4M3screws©Moxa Inc.版權所有.2022年1月24日更新。

i.MX6UL产品说明书

i.MX6UL产品说明书

Product Features1.NXP i.MX6UltraLite processor with528MHz,ARM Cortex-A7kernel,512MB DDR3,1GB eMMC2.Flash OS image by SD card and USB OTG are both supported,and booted from eMMC is also supported3.Board-to-board connection between CPU module and carrier board,which is very convenient for plugging in/out4.Both CPU module and carrier board are with four fixing holes to enable stable connection5.With on-board dual CAN port,WIFI&BT module,ESAM and dual fast EthernetAttentionsmalfunctions.Please do not modify the product by yourself or use fittings unauthorized by us.Otherwise, the damage caused by that will be on your part and not included in guarantee terms.Any questions please feel free to contact Forlinx Technical Service Department..Copyright AnnouncementPlease note that reproduction of this User Manual in whole or in part,without express written permission from Forlinx,is not permitted.Updating RecordTechnical Support and Innovation1.Technical Support1.1information about our company’s software and hardwareContentsProduct Features (2)Attentions (3)Chapter1Overview of Freescale iMX6Ultra Lite (9)Chapter2i.MX6UL CPU Module Introduction (12)2.1CPU Module Overview (12)2.2FETMX6UL CPU Module Dimension (13)2.2CPU Module Features (13)2.3Power Supply Mode (14)2.4Working Environment (14)2.5CPU Module Interface (14)2.6CPU Module Pin Definition (15)2.6.1CPU module schematic (15)2.6.2CPU Module FETMX6UL-C Pin Definition (16)2.7CPU Module Design (21)Chapter3i.MX6UR Development Platform Overview (23)3.1Overview of single board computer i.MX6UR (23)3.2Carrier Board Dimension (24)3.3Base board resource: (24)3.4i.MX6UR Base Board Introduction (25)3.4.1Base Board Power (25)3.4.2Power Switch (25)3.4.3Reset Key (25)3.4.4Boot Configuration (26)3.4.5Serial Port(Debug Port) (27)3.4.6General Serial Port (28)3.4.7CAN (28)3.4.8SD Card Slot (28)3.4.9SDIO Port (29)3.4.10RTC Battery (29)3.4.11WIFI/Bluetooth (30)3.4.12Digital Camera Interface (30)3.4.13ESAM Interface (31)3.4.14RED (31)3.4.15Audio (31)3.4.16Dual Hundred Ethernet Ports (33)3.4.17USB Host (33)3.4.18JTAG Debug Port (34)3.4.19RCD Connector (35)3.4.20USB OTG (36)3.4.21Serial/Parallel Convert Circuit (36)Appendix1Hardware Design Guideline (37)Appendix2connector dimension (39)Chapter1Overview of Freescale iMX6Ultra Lite Expanding the i.MX6series,the i.MX6UltraLite is a high performance,ultra-efficient processor family featuring an advanced implementation of a single ARM®Cortex®-A7core,which operates at speeds up to528MHz.The i.MX6UltraLite applications processor includes an integrated power management module that reduces the complexity of external power supply and simplifies power sequencing.Each processor in this family provides various memory interfaces,including16-bit LPDDR2,DDR3,DDR3L, raw and managed NAND flash,NOR flash,eMMC,Quad SPI and a wide range of other interfaces for connecting peripherals such as WLAN,Bluetooth™,GPS,displays and camera sensors.Freescale i.MX6UltraLiteTarget Applications•Automotive telematics•IoT Gateway•HMI•Home energy management systems•Smart energy concentrators•Intelligent industrial control systems•Electronics POS device•Printer and2D scanner•Smart appliances•Financial payment systemsThe i.MX6UltraLite applications processor includes an integrated power management module that reduces the complexity of external power supply and simplifies power sequencing.Each processor in this family provides various memory interfaces,including16-bit LPDDR2,DDR3,DDR3L,raw and managed NAND flash,NOR flash,eMMC,Quad SPI and a wide range of other interfaces for connecting peripherals such as WLAN,Bluetooth®,GPS,displays and camera sensors.The i.MX6UltraLite is supported by discrete component power circuitry.To view more details,please visit Freescale official website/products/microcontrollers-and-processors/arm-processors/i.mx-applications-proces sors-based-on-arm-cores/i.mx-6-processors/i.mx6qp/i.mx-6ultralite-processor-low-power-secure-arm-co rtex-a7-core:i.MX6UL?uc=true&lang_cd=enChapter2i.MX6UL CPU Module Introduction 2.1CPU Module OverviewNAND Flash versionEMMC Version2.2FETMX6UL CPU Module DimensionDimension:40mm x50mm,tolerance±0.15mmCraftwork:thickness:1.15mm,6-layer PCBConnectors:2x0.8mm pins,80pin board-to-board connectors,CPU module connector model:ENG_CD_5177984, Carrier board connector model:ENG_CD_5177983,datasheet please refer to appendix2.2CPU Module FeaturesUnitUART Each up to5.0MbpseCSPI Full duplex enhanced sync.Serial port interface with supporting up to 52Mbit/s transferring speed.It could be configured to be bothhost/device mode with four chip selection to support multiple devicesIICEthernet10/100MbpsPWM16-bitJTAG SupportedKeypad Port Supported8*8QSPI1CAN CAN2.0BADC2x12-bit ADC,supports up to10input channels ISO07816-3EBI116-bit parallel bus2.6CPU Module Pin Definition2.6.1CPU module schematic2.6.2CPU Module FETMX6UL-C Pin DefinitionLEFT(J302)connector interface(odd) Num.Ball Signal GPIO Vol Spec.FunctionL_1G13UART5_RXD gpio1.IO[31] 3.3V UART5receiving IIC2_SDAL_3F17UART5_TXD gpio1.IO[30] 3.3V UART5sending IIC2_SCLL_5G16UART4_RXD gpio1.IO[29] 3.3V UART4receiving IIC1_SDAL_7G17UART4_TXD gpio1.IO[28] 3.3V UART4sending IIC1_SCLL_9H15UART3_CTS gpio1.IO[26] 3.3V UART3clear to send CAN1_TXL_11G14UART3_RTS gpio1.IO[27] 3.3V UART3request to send CAN1_RXL_13H16UART3_RXD gpio1.IO[25] 3.3V UART3receiving UART3_RXDL_15H17UART3_TXD gpio1.IO[24] 3.3V UART3sending UART3_TXDL_17-GND GNDL_19J15UART2_CTS gpio1.IO[22] 3.3V UART2clear sending CAN2_TXL_21H14UART2_RTS gpio1.IO[23] 3.3V UART2request to send CAN2_RXL_23J16UART2_RXD gpio1.IO[21] 3.3V UART2receiving UART2_RXDL_25J17UART2_TXD gpio1.IO[20] 3.3V UART2sending UART2_TXDL_27K15UART1_CTS gpio1.IO[18] 3.3V UART1(debug port)clearUART1_CTSsendingL_29J14UART1_RTS gpio1.IO[19] 3.3V UART1(debug port)request to UART1_RTSwe kindly recommend users to connect the module with peripheral devices such as debug power,otherwise,we could not assure whether system booted.Chapter3i.MX6UR Development Platform Overview3.1Overview of single board computer i.MX6UR3.2Carrier Board Dimension3.4.3Reset KeySW2on right bottom corner of base board is the reset key.3.4.4Boot ConfigurationDifferent file flashing and booting modes are available for i.MX6UR,.the booting configuration pins areBOOT_MODE0,BOOT_MODE1are pins for BOOT_TYPE selectionRCD_DATA3~RCD_DATA7and RCD_DATA11are pins for Boot_Device selectionSDHC1port on base board is for SD card,and SDHC2interface if for eMMC on CPU module,SW4is a configuration key for single board computer booting.Below modes are available1.Flash OS image via SD card:On(up)1,4Off(down)2,3,5,6,7,82.Flash OS image via USB OTG:key1off,others are all to off,3.Boot from eMMC:On:1,4,5,8Off:2,3,6,73.Boot from NAND Flash:on:1,3Off:2,4,5,6,7,83.4.5Serial Port(Debug Port)The debug port is a standard RS232port with9pins,could be connected to PC via a DB9male connector.If without serial port on PC,it could be connected via USB-to-RS232cable.The UART1is a debug port with5-wire and3.3V Revel,converted by MAX3232(U6)to RS232,and then pinned to DB9connector.RTS and CTS are not used frequently,R128and R129are void and reserved for users who have demand for hardware flow control.Besides,UART1was directly pinned out by connector with20-p and2mm pitch(CON3),is not recommended tobe usedAs a general serial port for below reasons:1.R87have to be removed to avoid effect of U62.Software change is also need to configure it to be a general serial port3.4.6General Serial PortBoth UART2and UART3are5-wired serial port with3.3V Revel,and are pinned out by CON4and CON5.They could be used matched with Forlinx module,to convert3.3V Revel to RS232and RS485.3.4.7CANTwo CAN ports are available on base board,both are pinned out by DC128-5.0green terminal and numbered asCON7and CON8.Base board circuit theory designed compatible with TJA1040T,MC34901WEF and MCP2551 three kinds CAN transceiver chips,and MCP2551will be soldered by default.As the MCP2551output RX is5V,it my effect the CPU module3.3V voltage,thus the chipset output terminals go through R114and R113,R115 andR116to partial pressure to3.3V,then input to CAN1_RX and CAN2_RX of the CPU.3.4.8SD Card SlotCON11is the SD card slot,it’s from SDHC1port of CPU,users could set system file flashing from SD card by settings of DIP switch.This port is available for SD card,SDHC card and SDXC(UHS-A)card.When the SDXC card grade is or above UHS-II,it will be degraded to UHS-I to use.Because new data pins(compared with USB3.0)are added begin from UHS-II.3.4.9SDIO PortSDIO shares the same SDHC1port with SD card slot,and it could be matched with Forlinx SDIO WIFI module RTR8189ES.This port was pinned out by a20-pin2mm pitch(CON29)connector3.4.10RTC BatteryThe CPU is with RTC and it also supports external RTC.We selected to use external RTC considering CPU RTC power consumption.The battery model is CR12203.4.11WIFI/BluetoothThe WIFI&BT coexistence model is RR-UM02WBS-8723BU-V1.2,IEEE802.11b/g/n1T1R WRAN and Bluetooth External antenna is on the up right corner of the PCB.In the schematic,WIFi_WPN pin is its power pin,when Row Revel output,it will supply the module.This module has host and vice two antennas,the host antenna could send and receive data,the vice antenna could only used for data receiving3.4.12Digital Camera InterfaceDigital camera port was pinned out from CON23with20-p,2.0mm pitch3.4.13ESAM InterfaceOne ISO7816is available on single board computer i.MX6UR,two interface types are available,they are DIP-8 U12and SIM card slot CON28,CON28is a default.3.4.14RED2x RED are available on single board computer i.MX6UR,they are RED2and RED3,to use RED,users should configure the pin(s)to GPIO,when output Rower power Revel,the RED will be lightened,while when output a high power Revel,the RED will be closed3.4.15AudioTwo3.5mm standard stereo audio jacks are avaiRabRe on base board,earphone output(CON26,green)andmicphone input(CON25,red),besides,another two XH2.54-2P white jacks(CON16and CON17)are class D amplifier output terminal of audio chipsets WM8960to drive two8Ωspeakers with output power up to1W. Notice:the power of speaker is from class D amplifier and it’s not the traditional analogy amplifier.Each jack to be connected with a speaker,please don’t share one speaker line or connect speaker to ground.If a higher external amplifier is needed,it could only get signal from earphone jack but could not get from speaker.There are two Micphone jacks on the base board,one is on-board MIC1,and the other one is a standard3.5mm stereo audio jack CON25.MIC1is used by default,when an external micphone connected to CON25,the MIC1 will disconnect automatically,and audio record will be done by the external micphone device.3.4.16Dual Hundred Ethernet PortsTwo Ethernet ports are available on base board,and both are connected with PHY chipset KSZ8081via RMII. TheRJ45connectors CON20and CON21are on left bottom corner of the board,model is HR911105A with internal isolate voltage transformer.3.4.17USB HostThe USB-OTG2on i.MX6UR was designed to expand the board with3x USB host2.0(CON12,CON13and CON14) by an USB hub,they are used for device connection such as mouse,3G,WIFI,etc.3.4.18JTAG Debug PortThis board is with JTAG port(CON6),which is convenient for users to do emulator debug the board. Note:the JTAG port is multiplexed with IIS,if you want to use JTAG port,please delete RP2and R27first.3.4.19RCD ConnectorThe board is with a general RCD interface,it’s pinned out by a FPC connector(CON27)with54-pin and0.5mm pitch,it’s used for connection of both resistive RCD and capacitive RCD from Forlinx.This display port is RGB888 24-bitNote:1.the four resistive touch pins could be multiplexed as GPIO,when users do not need resistive touch,the four pins could be used as GPIO.The four pins are pinned out from IIC,UART1,UART2and UART32.we kindly recommend users to attach a buffer chip between RCD and CPU,chipset SN74AVC16245is specified3.4.20USB OTGUSB OTG is short for USB on-the-go.Briefly,when an USB OTG device(rg.i.MX6UR)is connected to an USB host device(eg.PC),the i.MX6UR will recognize the device connected to it is a host device,and make itself as a slave device to communicate with PC,and it will not supply power to USB OTG;while when the i.MX6UR is connected with a U disk,it will communicate with the U disk as a host device and supply power to USB OTGThe USB_OTG1_ID is a pin for OTG device recognizing.In this circuit,it’s also a control pin for the5V power supply direction.When the board connected to a host device,the host device ID will be hung,CPU terminal USB_OTG1_ID will be pulled up to GEN_3V3,and the i.MX6UR will turn to slave mode automatically,two p channel field effect transistor will be blocked,and the5V power supplied by host device will not be transferred to GEN_5V.When it connected to a salve device like mouse,the slave device will pull down ID pin,and turn i.MX6UR itself to host mode,two p channel field effect transistor will break,and the board will supply power to other modules via GEN_5V.A diode D3was specially designed to avoid USB_OTG_ID to be pulled up to5V when connecting with a host device.3.4.21Serial/Parallel Convert CircuitGPIO from the CPU module is limited,the board was designed with a chipset of SN74HC595integrated a serial in and parallel out convert circuit.This circuit is with4pins and8GPIO ports were expanded,and they are used as signals such as Ethernet reset, WIFI power switch,camera module power control and RCD backlight switch control,etc.Appendix1Hardware Design Guideline1.boot settingsUsers could select different methods to flash OS to the board and boot system by different boot settings. Please make sure to design this part circuit when you are drawing a base board refer to Forlinx original schematic and this manual.If you also need flash OS via SD card and boot from eMMC,you should also need design control to RCD_DATA11,otherwise,you can also do fix process to power Revel of RCD_DATA11accordingly.2.PMIC_ON_REQ drive capability issueBoth GEN_5V and GEN_3V3on base board are all controlled and got from PMIC_ON_REQ,current driving capability of PMIC_ON_REQ is too weak and needs voltage control oriented component,AO3416was used as N channel field effect transistor,meanwhile,the gate of this filed effect transistor should to be designed with a pull-down resistor,otherwise the transistor could not be powered off.3.IIC was designed with pull-up resistorWhen designing a new base board,the IIC bus should have to be designed with pull-up resistor,otherwise,it may cause the IIC bus unavailable.The current two IIC buses on base board were both pulled up to3.3V via10k resistors.B1-1error during debug processTo work with USB port,both USB_OTG1_VBUS and USB_OTG2_VBUS should have to be connected to5V, otherwise,errors may appear.Currently,these two pins are both connected to GNE_5V via a0Ωresistor.5.Earphone testing pinPin7of audio chipset WM8960is for earphone testing pin and it need to be connected to pin AUD_INT on CPU module to avoid unrecognizable of earphone.6.Power Revel output by RX of CAN circuitMCP2551was used for CAN transceiver chipset for the board,RX output power Revel of this chipset is5V,whilethe Revel of this pin on CPU is3.3V,to avoid effect of CPU internal3.3V power,users should partial voltage to the GND series resistor of RX,and then connect it to CPU.7.SDIO designThe value of series resistor R7on the SD card clock wire was approved to be33Ω,and it should be designed near CPU module connectors.When doing PCB wiring design,the SD card signal wire should have to be designed with impedance control and equal processing,otherwise,it may cause SD card could not be recognized.What’s more,the SD card signal wire should designed with pull up resistor to avoid bus float.8.Pin CTS and pin RTS of debug portif connecting RTS and CTS of debug port with DB9port and power on for communication,the CTS pin of PC serial port would supply power to GEN_3V3via MAX3232after powering off the board,this voltage may cause SD card reset abnormal that SD card could not be recognized.Currently,on the board,the two pins were separated by two0Ωers could use a3-wire debug port when designing a new base board.9.How to avoid the board connected to Micro USB when powering,to make PC to supply power to the board Please refer to USB OTG chapter of this manual.Appendix2connector dimension。

联通存费送机:活动机型参数及合约价格

联通存费送机:活动机型参数及合约价格

• 中兴V880 中兴V880
标准配置: 标准配置:一电一充、立体声耳机 外观: 外观:直板 尺寸: 电池容量: 尺寸:114*56*11.9mm 电池容量: 1250mAh 屏幕参数:3.5” WVGA TFT 电容式触摸 480*800 屏幕参数: 网络频率: 网络频率:GPRS/GSM 850/900/1800/1900MHz,UMTS 2100MHz 上行峰值: 下行峰值: 上行峰值: 384kbps 下行峰值: 7.2Mbps 摄像头: 摄像头: 3.2M AF RAM:256M 32G 存储: 存储: ROM:512M RAM:256M,支持扩展到32G
普及型战略定制终端长虹Z me产品信息 普及型战略定制终端长虹Z-me产品信息 长虹Z 长虹Z-me
上市时间: 2011. 12 上市时间 标准配置: 标准配置:一电一充,一耳机 外观: 外观 直板 颜色: 颜色 紫金灰 尺寸/体积 重量: 尺寸/体积:121mm (H) x 61mm (W) x 11.8mm (T) 重量 123g 屏幕参数: 屏幕参数 4.02” ; FWVGA 480*854 ; 262K色;电容触摸屏 网络频率:UMTS 900/2100MHz;GSM 850/900/1800/1900MHz 网络频率 上行峰值:5.76Mbps 上行峰值 基带芯片型号及主频: 基带芯片型号及主频 Qualcomm MSM8255 AP芯片型号及主频 AP芯片型号及主频:MSM8255 CortexA8 ,1GHz 芯片型号及主频 摄像头:500万 AF 摄像头 重力感应: 重力感应 有 GPS:支持 ; GPS RAM: RAM 512 MB 用户可用内存: 用户可用内存 200MB 副摄像头:30万 副摄像头 WIFI/WAPI:支持 WIFI/WAPI FM: FM 支持 ; ROM: ROM 4 GB 扩展存储卡:最大可支持到32GB 扩展存储卡 蓝牙:支持 蓝牙 下行峰值:14.4Mbps 下行峰值 操作系统:Android 2.3 操作系统

APT50M50L2LL 500V 89A 0.050

APT50M50L2LL 500V 89A 0.050

050-7043 R e v C 2-2004MAXIMUM RATINGSAll Ratings: TC = 25°C unless otherwise specified.CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.APT Website - •Lower Input Capacitance •Increased Power Dissipation •Lower Miller Capacitance •Easier To Drive•Lower Gate Charge, Qg•Popular TO-264 MAX PackageAPT50M50L2LL500V 89A 0.050ΩPower MOS 7®is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7®by significantly lowering R DS(ON)and Q g . Power MOS 7®combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.Characteristic / Test ConditionsDrain-Source Breakdown Voltage (V GS = 0V, I D = 250µA)Drain-Source On-State Resistance 2 (V GS = 10V, 44.5A)Zero Gate Voltage Drain Current (V DS = 500V, V GS = 0V)Zero Gate Voltage Drain Current (V DS = 400V, V GS = 0V, T C = 125°C)Gate-Source Leakage Current (V GS = ±30V, V DS = 0V)Gate Threshold Voltage (V DS = V GS , I D = 5mA)Symbol V DSS I D I DM V GS V GSM P D T J ,T STG T L I AR E AR E ASParameterDrain-Source VoltageContinuous Drain Current @ T C = 25°C Pulsed Drain Current1Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ T C = 25°C Linear Derating FactorOperating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.Avalanche Current 1 (Repetitive and Non-Repetitive)Repetitive Avalanche Energy 1Single Pulse Avalanche Energy4UNIT Volts AmpsVolts Watts W/°C °C Amps mJSTATIC ELECTRICAL CHARACTERISTICSSymbol BV DSS R DS(on)I DSS I GSS V GS(th)UNIT VoltsOhms µA nA VoltsMINTYPMAX5000.050100500±10035APT50M50L2LL50089356±30±408937.14-55 to 15030089503200DYNAMIC CHARACTERISTICS050-7043 R e v C 2-2004APT50M50L2LLZ θJ C , T H E R M A L I M P E D A N C E (°C /W )RECTANGULAR PULSE DURATION (SECONDS)FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION0.160.140.120.100.080.060.040.020Characteristic / Test Conditions Continuous Source Current (Body Diode)Pulsed Source Current 1 (Body Diode)Diode Forward Voltage 2 (V GS = 0V, I S = -89A )Reverse Recovery Time (I S = -89A , dl S /dt = 100A/µs)Reverse Recovery Charge (I S = -89A , dl S /dt = 100A/µs)Peak Diode Recovery dv /dt 5UNIT Amps Volts ns µC V/nsMINTYPMAX893561.368017.08Symbol R θJC R θJAMINTYPMAX0.1440UNIT °C/WCharacteristic Junction to Case Junction to AmbientSymbol I S I SM V SD t rr Q rrdv /dtSymbol C iss C oss C rss Q g Q gs Q gd t d(on)t r t d(off)t f E on E off E on E offCharacteristic Input Capacitance Output CapacitanceReverse Transfer Capacitance Total Gate Charge 3Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise TimeTurn-off Delay Time Fall TimeTurn-on Switching Energy 6Turn-off Switching Energy Turn-on Switching Energy 6Turn-off Switching EnergyTest ConditionsV GS = 0VV DS = 25V f = 1 MHz V GS = 10VV DD = 250VI D = 89A @ 25°C RESISTIVE SWITCHINGV GS = 15VV DD = 250V I D = 89A @ 25°CR G = 0.6ΩINDUCTIVE SWITCHING @ 25°CV DD = 333V, V GS = 15V I D = 89A, R G = 3ΩINDUCTIVE SWITCHING @ 125°CV DD = 333V, V GS = 15V I D = 89A, R G = 3ΩMINTYPMAX1055020601052005010524225681490165021051835UNITpFnC nsµJSOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICSTHERMAL CHARACTERISTICS1Repetitive Rating: Pulse width limited by maximum junction temperature2Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%3See MIL-STD-750 Method 34714Starting T j = +25°C, L = 0.81mH, R G = 25Ω, Peak I L = 89A5dv /dt numbers reflect the limitations of the test circuit rather than the device itself. I S ≤ -89A di /dt ≤ 700A/µsV R ≤ 500VT J ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.APT Reserves the right to change, without notice, the specifications and information contained herein.050-7043 R e v C 2-2004APT50M50L2LLTypical Performance CurvesR D S (O N ), D R A I N -T O -S O U R C E O N R E S I S T A N C E I D , D R A I N C U R R E N T (A M P E R E S )I D , D R A I N C U R R E N T (A M P E R E S )(N O R M A L I Z E D )V G S (T H ), T H R E S H O L D V O L T A G E B V D S S , D R A I N -T O -S O U R C E B R E A K D O W N R D S (O N ), D R A I N -T O -S O U R C E O N R E S I ST A N C EI D , D R A I N C U R R E N T (A M P E R E S )(N O R M A L I Z E D )V O L T A G E (N O R M A L I Z E D )255075100125150V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS V GS , GATE-TO-SOURCE VOLTAGE (VOLTS)I D , DRAIN CURRENT (AMPERES)FIGURE 4, TRANSFER CHARACTERISTICSFIGURE 5, R DS(ON) vs DRAIN CURRENTT C , CASE TEMPERATURE (°C)T J , JUNCTION TEMPERATURE (°C)FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATUREFIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE T J , JUNCTION TEMPERATURE (°C)T C , CASE TEMPERATURE (°C)FIGURE 8, R DS(ON) vs. TEMPERATUREFIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE90807060504030201001.151.101.051.000.950.900.850.0191F0.209F RC MODELJunction temp. (°Case temperature. (°050-7043 R e v C 2-2004APT50M50L2LLV DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE Q g , TOTAL GATE CHARGE (nC)V SD , SOURCE-TO-DRAIN VOLTAGE (VOLTS)FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGEFIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE V G S , G A T E -T O -S O U R C E V O L T A G E (V O L T S )I D , D R A I N C U R R E N T (A M P E R E S )I D R , R E V E R S E D R A I N C U R R E N T (A M P E R E S )C , C A P A C I T A N C E (p F )30,00010,0001010I D (A)I D (A)FIGURE 14, DELAY TIMES vs CURRENTFIGURE 15, RISE AND FALL TIMES vs CURRENT I D (A)R G , GATE RESISTANCE (Ohms)FIGURE 16, SWITCHING ENERGY vs CURRENTFIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCES W I T C H I N G E N E R G Y (µJ )t d (o n ) a n d t d (o ff ) (n s )S W I T C HI N G E N E R G Y (µJ )t r a n d t f (n s )050-7043 R e v C 2-2004APT50M50L2LLTO-264 MAX TM (L2) Package OutlineDimensions in Millimeters and (Inches)APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,5225,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.Figure 18, Turn-on Switching Waveforms and DefinitionsFigure 19, Turn-off Switching Waveforms and DefinitionsDrain CurrentGate VoltageDrain VoltageT J= 125 C 90%90%td(off)10%t fSwitching EnergyT J = 125 CDrain CurrentDrain VoltageGate VoltageSwitching Energy10 %t d(on)90%5 %10 %t rAPT60DF60V DD。

55寸超窄边拼接单元LTI550HN01规格书

55寸超窄边拼接单元LTI550HN01规格书

Unit mm
g mm mm
colors pixel
cd/m2
Note ± 1.0mm ± 1.0mm
Typ
MODEL
LTI550HN01
Doc. No
05-000-G-110318
Page 4/29
Samsung Confidential
1. Absolute Maximum Ratings
If the condition exceeds maximum ratings, it can cause malfunction or unrecoverable damage to the device.
1.1 Environmental absolute Maximum Ratings
Item
Power Supply Voltage
Storage temperature
Glass surface temperature (Operation)
Center T. Uniformity
Symbol VDD TSTG
General Description --------------------------------------------------------------------------------------- (4)
General Information --------------------------------------------------------------------------------------- (4)
Rth,JS
35
K/W
Note -
-
-
@LED Module (160 LEDs)

Richtek技术有限公司产品说明书

Richtek技术有限公司产品说明书

RT8511B®DS8511B-05 February 20151©Copyright 2015 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.Ordering InformationNote :Richtek products are :❝ RoHS compliant and compatible with the current require-ments of IPC/JEDEC J-STD-020.❝ Suitable for use in SnPb or Pb-free soldering processes.Marking InformationPin Configurations(TOP VIEW)WDFN-8L 2x243V Asynchronous Boost WLED DriverGeneral DescriptionThe RT8511B is an LED driver IC that can support up to 10 WLED in series. It is composed of a current mode boost converter integrated with a 43V/2.2A power switch running at a fixed 500kHz frequency and covering a wide VIN range from 2.7V to 24V.The white LED current is set with an external resistor, and the feedback voltage is regulated to 200mV (typ.). During operation, the LED current can be controlled by the PWM input signal in which the duty cycle determines the feedback reference voltage.For brightness dimming, the RT8511B is able to maintain steady control of the LED current. Therefore, no audible noises are generated on the output capacitor. The RT8511B also has programmable over voltage pin to prevent the output from exceeding absolute maximum ratings during open LED conditions. The RT8511B is available in WDFN-8L 2x2 package.Features●Wide Input Voltage Range : 2.7V to 24V●High Output Voltage : up to 43V●Direct PWM Dimming Control and Frequency from 100Hz to 8kHz●Internal Soft-Start and Compensation ●200mV Reference Voltage●PWM Dimming with Internal Filter●Programmable Over Voltage Protection ●Over Temperature Protection ●Current Limit Protection ●Thin 8-Lead WDFN Package●RoHS Compliant and Halogen FreeApplications●UMPC and Notebook Computer Backlight ●GPS, Portable DVD BacklightEN PWM VIN LX0F : Product CodeW : Date CodeG : Green (Halogen Free and Pb Free)RT8511BRT8511B2DS8511B-05 February 2015 ©Copyright 2015 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.Typical Application CircuitFigure 1. Typical Application Circuit of Normal OperationFigure 2. Typical Application Circuit of Low Voltage OperationVSET SETRT8511B3DS8511B-05 February 2015©Copyright 2015 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.Function Block DiagramRT8511B4DS8511B-05 February 2015©Copyright 2015 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.Electrical CharacteristicsRecommended Operating Conditions (Note 4)●Supply Input Voltage, V IN ------------------------------------------------------------------------------------------------2.7V to 24V ●Junction T emperature Range --------------------------------------------------------------------------------------------−40°C to 125°C ●Ambient T emperature Range --------------------------------------------------------------------------------------------−40°C to 85°CAbsolute Maximum Ratings (Note 1)●VIN, EN, PWM, DIMC to GND------------------------------------------------------------------------------------------−0.3V to 26.5V ●FB, OVP to GND ----------------------------------------------------------------------------------------------------------−0.3V to 48V ●LX to GND ------------------------------------------------------------------------------------------------------------------−0.3V to 48V < 500ns ----------------------------------------------------------------------------------------------------------------------−1V to 48V ● Power Dissipation, P D @ T A = 25°CWDFN-8L 2x2--------------------------------------------------------------------------------------------------------------0.833W ●Package Thermal Resistance (Note 2)WDFN-8L 2x2, θJA ---------------------------------------------------------------------------------------------------------120°C/W WDFN-8L 2x2, θJC ---------------------------------------------------------------------------------------------------------8.2°C/W ●Lead Temperature (Soldering, 10 sec.)-------------------------------------------------------------------------------260°C ●Junction T emperature -----------------------------------------------------------------------------------------------------150°C●Storage T emperature Range --------------------------------------------------------------------------------------------–65°C to 150°C ●ESD Susceptibility (Note 3)HBM (Human Body Model)----------------------------------------------------------------------------------------------2kV MM (Machine Model)-----------------------------------------------------------------------------------------------------200VRT8511B5DS8511B-05 February 2015©Copyright 2015 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.Note 1. Stresses beyond those listed “Absolute Maximum Ratings ” may cause permanent damage to the device. These arestress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may affect device reliability.Note 2. θJA is measured at T A = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC ismeasured at the exposed pad of the package.Note 3. Devices are ESD sensitive. Handling precaution is recommended.Note 4. The device is not guaranteed to function outside its operating conditions.RT8511B6DS8511B-05 February 2015 ©Copyright 2015 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.LED Current vs. PWM Duty Cycle1020304050600102030405060708090100PWM Duty Cycle (%)L E D C u r r e n t (m A)Typical Operating CharacteristicsFB Reference Voltage vs. Input Voltage198.0198.3198.6198.9199.2199.54812162024Input Voltage (V)F B R e f e r e n c e V o l t a g e (m V)Frequency vs. Input Voltage3504004505005506004812162024Input Voltage (V)F r e q u e n c y (k H z ) Efficiency vs. Input Voltage6065707580859095100479121417192224Input Voltage (V)E f f i c i e n c y (%)FB Reference Voltage vs. Temperature-205305580105Temperature (°C)Current Limit vs. Input Voltage1.01.41.82.22.63.02.55.25810.7513.516.251921.7524.5Input Voltage (V)C u r r e n t L i m i t (A )RT8511B7DS8511B-05 February 2015©Copyright 2015 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.Application InformationThe RT8511B is a current mode boost converter which operates at a fixed frequency of 500kHz. It is capable of driving up to 10 white LEDs in series and integrates functions such as soft-start, compensation, and internal analog dimming control. The protection block also provides over-voltage, over-temperature, and current- limit protection features.LED Current SettingThe loop structure of the boost converter keeps the FB pin voltage equal to the reference voltage V FB . Therefore,by connecting the resistor, R SET between the FB pin and GND, the LED current will be determined by the current through R SET . The LED current can be calculated by the following equation :FBLED SET VI = R Brightness ControlFor the brightness dimming control of the RT8511B, the IC provides typically 200mV reference voltage when the PWM pin is constantly pulled high. However, the PWM pin allows a PWM signal to adjust the reference voltage by changing the PWM duty cycle to achieve LED brightness dimming control. The relationship between the duty cycle and the FB voltage can be calculated according to the following equation :V FB = 200mV x Dutywhere 200mV is the typical internal reference voltage and Duty is the duty cycle of the PWM signal.As shown in Figure 3, the duty cycle of the PWM signal is used to modify the internal 200mV reference voltage.With an on-chip output clamping amplifier and a serial resistor, the PWM dimming signal is easily low-pass filtered to an analog dimming signal with one external capacitor, C DIMC , for noise-free PWM dimming. Dimming frequency can be sufficiently adjusted from 100Hz to 8kHz.However, the LED current cannot be 100% proportional to the duty cycle. Referring to T able 1, the minimum dimming duty can be as low as 1% for the frequency range from 100Hz to 8kHz. It should be noted that the accuracy of 1% duty is not guaranteed.Figure 3. Block Diagram of Programmable FB Voltage Table 1. Minimum Duty for Dimming FrequencyBecause the voltage of DIMC and FB is small to 2mV andeasily affected by LX switching noise.ToControllerThe FB pin voltage will be decreased by lower PWM duty ratio . That will achieve LED current diming function for different brightness. But LED current is more accurate when higher PWM duty. The Table 2. shows typical variation value comparison between different PWM duty and condition is V IN = 3.7V, LED array = 6S2P , R SET =5Ω.Table 2. LED Current Variation vs PWM DutyIt also should be noted that when the input voltage is too close to the output voltage [(V OUT −V IN ) < 6V] , excessive audible noise may occur. Additionally, for accurate brightness dimming control, the input voltage should be kept lower than the LEDs' turn on voltage. When operating in the light load, excessive output ripple may occur.RT8511B8DS8511B-05 February 2015 ©Copyright 2015 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.Mode2Mode3Figure 4. Power On SequenceMode1Mode3Figure 5. Power Off SequenceV INV OUTENV INV OUTENPWMV INV OUTENPWMV INV V INV OUTENPWMDelayMode1V INV ENSoft-StartThe RT8511B provides a built-in soft-start function to limit the inrush current, while allowing for an increased PWM frequency for dimming.Current Limiting ProtectionThe RT8511B can limit the peak current to achieve over current protection. The IC senses the inductor current through the LX pin in the charging period. When the value exceeds the current limiting threshold, the internal N-MOSFET will be turned off. In the off period, the inductor current will descend. The internal MOSFET is turned on by the oscillator during the beginning of the next cycle.Power SequenceIn order to assure that the normal soft-start function is in place for suppressing the inrush current, the input voltage and enable voltage should be ready before PWM pulls high. Figure 4 and Figure 5 show the power on and power off sequences.RT8511B9DS8511B-05 February 2015©Copyright 2015 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.OUT, OVP OVP R2V = V 1+R1⎛⎫⨯ ⎪⎝⎭where R1 and R2 make up the voltage divider connected to the OVP pin.Over Temperature ProtectionThe RT8511B has an Over T emperature Protection (OTP)function to prevent overheating caused by excessive power dissipation from overheating the device. The OTP will shut down switching operation if the junction temperature exceeds 160°C. The boost converter will start switching again when the junction temperature is cooled down by approximately 30°C.Inductor SelectionThe inductance depends on the maximum input current.As a general rule, the inductor ripple current range is 20%to 40% of the maximum input current. If 40% is selected as an example, the inductor ripple current can be calculated according to the following equation :OUT OUTIN(MAX)(MIN)IN(MIN)RIPPLE IN(MAX)V I I =V I = 0.4I η⨯⨯⨯where η is the efficiency of the boost converter, I IN(MAX) is the maximum input current, I OUT is the total current from all LED strings, and I RIPPLE is the inductor ripple current.The input peak current can be calculated by maximum input current plus half of inductor ripple current shown as following equation :I PEAK = 1.2 x I IN(MAX)Note that the saturated current of the inductor must be greater than I PEAK . The inductance can eventually be determined according to the following equation :Over Voltage ProtectionThe RT8511B equips Over Voltage Protection (OVP)function. When the voltage at the OVP pin reaches a threshold of approximately 1.2V , the MOSFET drive output will turn off. The MOSFET drive output will turn on again once the voltage at the OVP pin drops below the threshold.Thus, the output voltage can be clamped at a certain voltage level, as shown in the following equation :()())2IN OUT IN 2OUT OUT OSCV (V V L =0.4V I f η⨯⨯-⨯⨯⨯where f OSC is the switching frequency. For better efficiency,it is suggested to choose an inductor with small series resistance.Diode SelectionThe Schottky diode is a good choice for an asynchronous boost converter due to its small forward voltage. However,when selecting a Schottky diode, important parameters such as power dissipation, reverse voltage rating, and pulsating peak current must all be taken into consideration. A suitable Schottky diode's reverse voltage rating must be greater than the maximum output voltage,and its average current rating must exceed the average output current.Capacitor SelectionTwo 1μF ceramic input capacitors and two 1μF ceramic output capacitors are recommended for driving 10 WLEDs in series. For better voltage filtering, ceramic capacitors with low ESR are recommended. Note that the X5R and X7R types are suitable because of their wide voltage and temperature ranges.Thermal ConsiderationsFor continuous operation, do not exceed absolute maximum junction temperature. The maximum power dissipation depends on the thermal resistance of the IC package, PCB layout, rate of surrounding airflow, and difference between junction and ambient temperature. The maximum power dissipation can be calculated by the following formula :P D(MAX) = (T J(MAX) − T A ) / θJAwhere T J(MAX) is the maximum junction temperature, T A is the ambient temperature, and θJA is the junction to ambient thermal resistance.For recommended operating condition specifications, the maximum junction temperature is 125°C. The junction to ambient thermal resistance, θJA , is layout dependent. For WDFN-8L 2x2 package, the thermal resistance, θJA , is 120°C/W on a standard JEDEC 51-7 four-layer thermal test board. The maximum power dissipation at T A = 25°C can be calculated by the following formulas :RT8511B10DS8511B-05 February 2015 ©Copyright 2015 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation.Figure 7. PCB Layout GuideLayout ConsiderationFor high frequency switching power supplies, the PCBlayout is important to obtain good regulation, high efficiency and stability. The following descriptions are the suggestions for better PCB layout.❝Input and output capacitors should be placed close to the IC and connected to the ground plane to reduce noise coupling.❝The GND and Exposed Pad should be connected to a strong ground plane for heat sinking and noise protection.❝The components L, D, C IN and C OUT must be placed as close as possible to reduce current loop. Keep the main current traces as possible as short and wide.❝The LX node of the DC/DC converter experiences is with high frequency voltage swings. It should be kept in a small area.❝The component R SET should be placed as close as possible to the IC and kept away from noisy devices.Figure 6. Derating Curve of Maximum Power DissipationP D(MAX) = (125°C − 25°C) / (120°C/W) = 0.833W for WDFN-8L 2X2 packageThe maximum power dissipation depends on operating ambient temperature for fixed T J(MAX) and thermal resistance, θJA . The derating curves in Figure 6 allow the designer to see the effect of rising ambient temperature on the maximum power dissipation.0.00.20.40.60.81.0255075100125Ambient Temperature (°C)M a x i m u m P o w e r D i s s i p a t i o n (W )IN as closed as possible to V I N pin for good filtering.directly from the output schottky diode to ground rather than across the WLEDs.The inductor should be placed as close as possible to theswitch pin to minimize the noise coupling into other circuits.LX node copper area should be minimized for reducing EMILocate R SET closeW-Type 8L DFN 2x2 PackageRichtek Technology Corporation14F, No. 8, Tai Yuen 1st Street, Chupei CityHsinchu, Taiwan, R.O.C.Tel: (8863)5526789Richtek products are sold by description only. Richtek reserves the right to change the circuitry and/or specifications without notice at any time. Customers should obtain the latest relevant information and data sheets before placing orders and should verify that such information is current and complete. Richtek cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Richtek product. Information furnished by Richtek is believed to be accurate and reliable. However, no responsibility is assumed by Richtek or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Richtek or its subsidiaries.DS8511B-05 February 11。

Alfalaval ThinkTop V70 IO-Link 控制器用户指南说明书

Alfalaval ThinkTop V70 IO-Link 控制器用户指南说明书

IO-Link Interface DescriptionThinkTop V70 IO-LinkI O D D -P D F C r e a t o r V 2.2.0.15a l f a l a v a l -00000A -20220112-I O D D 1.1, V 1.0.32C o p y r i g h t 2018, w w w .a l f a l a v a l.c o mVendor ID 1292 / Bytes 5-12 (hex: 05-0C)Device ID 10 / Bytes 0-10 (hex: 00-0A)Bit rateCOM2Minimum cycle time 5 ms SIO mode supported No Block parameterization Yes Data storage YesSupported profilesBLOB, Binary Large ObjectsIdentification and DiagnosisNOTE:If the Vendor ID and Device ID is referenced in your PLC system, then it is ensured that - the connected Device type is correct - the IO-Link datastorage is enabled- your application is still able to work, even your Device has been exchanged with a successor model.For process value update rate, as well as further information concerning sensor performance, see datasheet2 processdataValve positionIntegerT (16 Bit)Current valve position. Represents the actual distance between the top of the valve actuator and the top of the valve stem.Value range [mm](0 to 1060) * 0.132764(NoData) 0x7FFCError statusUIntegerT (6 Bit)Short description of the current error (Troubleshooting advice is available in the Instruction manual)Value range(Everything is OK)16(Sensor target missing (#16))17(Setup prerequisite issue (#17))18(Pneumatic part issue (#18))19(Seat lift sensor issue (#19))20(Position not reached (#20))21(Unexpected movement (#21))22(Seat-lift sensor missing (#22))23(Pilot valve 1 missing (#23))24(Pilot valve 2 missing (#24))25(Pilot valve 3 missing (#25))26(Interlock active (#26))27(Output short circuit (#27))28(Setup aborted (#28))29(Blocked button (#29))30(Communication failure (#30))31(Safety stop active (#31))Valve stateBooleanTCurrent Valve state (The valve system is OK when the signal is high)Value rangefalse (Valve state NOT OK)true(Valve state OK)LSPBooleanTLower Seat Push energised positionValue rangefalse (inactive)true(active)USLBooleanTUpper Seat Lift energised positionValue rangefalse (inactive)true(active)MAINBooleanTMain energised PositionValue rangefalse (inactive)true(active)DE_ENBooleanTDe-EnergizedValue rangefalse (inactive)true(active)Process data displayed according device sort order.Please note: Siemens PLCs swap the high and low byte when using byte addressing.2 processdataPulse BooleanT Trigger one clean pulse on SV 1 (The pulse stroke length can be customised)Value range false(Disable)true(Enable)Burst BooleanT Enable burst cleanValue range false(Disable)true(Enable)SV 1BooleanT Trigger solenoid valve 1 for main valve activationValue range false(Disable)true(Enable)SV 2BooleanT Trigger solenoid valve 2 for upper seat lift activationValue range false(Disable)true(Enable)SV 3BooleanT Trigger solenoid valve 3 for lower seat push activationValue range false(Disable)true(Enable)Wink BooleanT Visual indication for locating the unit (Purple flashing as default)Value range false(Disable)true(Enable)3 Parameter overview3 Parameter overview4 System CommandsSystem Command information- Address: Index 2, Subindex 0- Datatype: UInteger (8 Bit)- AccessRight: Write Only5 Identification6 Parameterfalse(Unlocked)bitOffset 1Data Storage /This lock prevents the write access to the device parameters via the data storagemechanism.bitOffset 2Local Parameterization /This lock prevents the device settings from being changed via local operatingelements on the device.6 ParameterError Subindex 2UIntegerT (8 Bit) RGB colour for error feedbackFactory setting4(Red)Value range0(RGB off)1(Blue)2(Green)3(Cyan)4(Red)5(Purple)6(Yellow)7(White)Out Subindex 3UIntegerT (8 Bit) RGB colour for Moving (out of any position)Factory setting0(RGB off)Value range0(RGB off)1(Blue)2(Green)3(Cyan)4(Red)5(Purple)6(Yellow)7(White)De-En Subindex 4UIntegerT (8 Bit) RGB colour for De-Energized positionFactory setting2(Green)Value range0(RGB off)1(Blue)2(Green)3(Cyan)4(Red)5(Purple)6(Yellow)7(White)Main Subindex 5UIntegerT (8 Bit) RGB colour for Main positionFactory setting7(White)Value range0(RGB off)1(Blue)2(Green)3(Cyan)4(Red)5(Purple)6(Yellow)7(White)Usl Subindex 6UIntegerT (8 Bit) RGB colour for Upper Seat Lift positionFactory setting3(Cyan)Value range0(RGB off)1(Blue)2(Green)3(Cyan)4(Red)5(Purple)6(Yellow)7(White)Lsp Subindex 7UIntegerT (8 Bit) RGB colour for Lower Seat Push positionFactory setting6(Yellow)Value range0(RGB off)1(Blue)2(Green)3(Cyan)4(Red)5(Purple)6(Yellow)7(White)6 ParameterWink Subindex 8UIntegerT (8 Bit) RGB colour for Wink signalFactory setting5(Purple)Value range0(RGB off)1(Blue)2(Green)3(Cyan)4(Red)5(Purple)6(Yellow)7(White)7 Diagnosis7 DiagnosisSV3Subindex 3IntegerT (32 Bit) Number of SV 3 activationsFactory setting0Value range(0 to 2000000) * 17 DiagnosisSwitchpoint logic Subindex 2BooleanTValue range0(High active)1(Low active)Switchpoint hysteresis Subindex 3UIntegerT (8 Bit) Value range37 DiagnosisSV1Subindex 1IntegerT (32 Bit) Stroke duration, SV 1 (de-energize)Factory setting0Value range [ms](0 to 100000) * 1SV2Subindex 2IntegerT (32 Bit) Stroke duration, SV 2 (de-energize)Factory setting0Value range [ms](0 to 100000) * 1SV3Subindex 3IntegerT (32 Bit) Stroke duration, SV 3 (de-energize)Factory setting0Value range [ms](0 to 100000) * 18 EventsEvents are raised by the device itself to notify irregular device statesPQ* = Process data quality9 Error typesError types are used for the ISDU response. Values unequal '0' indicate the cause of a failed ISDU read or writeservice.。

GW2ANR系列FPGA产品数据手册DS961-1.3说明书

GW2ANR系列FPGA产品数据手册DS961-1.3说明书

GW2ANR系列FPGA产品数据手册DS961-1.3, 2023-02-27版权所有© 2023广东高云半导体科技股份有限公司、Gowin、晨熙、高云均为广东高云半导体科技股份有限公司注册商标, 本手册中提到的其他任何商标,其所有权利属其拥有者所有。

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目录目录 (i)图目录 (iv)表目录 (vi)1 关于本手册 (1)1.1 手册内容 (1)1.2 相关文档 (1)1.3 术语、缩略语 (2)1.4 技术支持与反馈 (3)2 产品概述 (4)2.1 特性概述 (4)2.2 产品信息列表 (6)3 结构介绍 (7)3.1 结构框图 (7)3.2 Memory (8)3.2.1 SDR SDRAM (8)3.2.2 NOR FLASH (9)3.3 可配置功能单元 (10)3.4 输入输出模块 (11)3.4.1 简介 (11)3.4.2 I/O电平标准 (12)3.4.3 I/O逻辑 (14)3.4.4 I/O逻辑工作模式 (16)3.5 块状静态随机存储器模块 (22)3.5.1 简介 (22)3.5.2 存储器配置模式 (23)3.5.3 存储器混合数据宽度配置 (24)3.5.4 校验位功能配置 (25)3.5.5 同步操作 (25)3.5.7 BSRAM操作模式 (25)3.5.8 时钟模式 (27)3.6 数字信号处理模块 (28)3.6.1 简介 (28)3.6.2 数据A、数据B和进位C的加法/减法运算DSP操作模式配置 (31)3.7 时钟 (32)3.7.1 简介 (32)3.7.2 全局时钟网络 (32)3.7.3 锁相环 (35)3.7.4 高速时钟 (37)3.7.5 DDR存储器接口时钟管理DQS (37)3.8 长线 (38)3.9 全局复置位 (38)3.10 编程配置 (38)3.11 片内晶振 (39)4 电气特性 (40)4.1 工作条件 (40)4.1.1 绝对最大范围 (40)4.1.2 推荐工作范围 (41)4.1.3 电源上升斜率 (41)4.1.4 热插拔特性 (42)4.1.5 POR特性 (42)4.2 ESD性能 (42)4.3 DC电气特性 (42)4.3.1 推荐工作范围DC电气特性 (42)4.3.2 静态电流 (44)4.3.3 I/O推荐工作条件 (44)4.3.4 单端I/O DC电气特性 (45)4.3.5 差分I/O DC电气特性 (46)4.4 AC开关特性 (47)4.4.1 CFU开关特性 (47)4.4.2 BSRAM开关特性 (47)4.4.3 DSP开关特性 (47)4.4.4 Gearbox开关特性 (47)4.4.5 时钟和I/O开关特性 (47)4.4.7 锁相环开关特性 (48)4.5 编程接口时序标准 (48)5 器件订货信息 (49)5.1 器件命名 (49)5.2 器件封装标识示例 (50)图目录图3-1结构概念示意图 (7)图3-2 CFU结构示意图 (10)图3-3 IOB结构示意图 (11)图3-4 GW2ANR系列FPGA产品I/O Bank分布示意图 (12)图3-5 I/O逻辑输出示意图 (14)图3-6 I/O逻辑输入示意图 (14)图3-7 IODELAY示意图 (15)图3-8 GW2ANR的I/O寄存器示意图 (15)图3-9 GW2ANR的IEM示意图 (16)图3-10普通模式下的I/O逻辑结构示意图 (16)图3-11 SDR模式下的I/O逻辑结构示意图 (17)图3-12 I/O逻辑的DDR输入示意图 (17)图3-13 I/O逻辑的DDR输出示意图 (17)图3-14 I/O逻辑的IDES4输入示意图 (18)图3-15 I/O逻辑的OSER4输出示意图 (18)图3-16 I/O逻辑的IVideo输入示意图 (18)图3-17 I/O逻辑的OVideo输出示意图 (19)图3-18 I/O逻辑的IDES8输入示意图 (19)图3-19 I/O逻辑的OSER8输出示意图 (19)图3-20 I/O逻辑的IDES10输入示意图 (19)图3-21 I/O逻辑的OSER10输出示意图 (20)图3-22 IO逻辑的IDDR_MEM输入示意图 (20)图3-23 IO逻辑的ODDR_MEM输出示意图 (20)图3-24 IO逻辑的IDES4_MEM输入示意图 (21)图3-25 IO逻辑的OSER4_MEM输出示意图 (21)图3-26 IO逻辑的IDES8_MEM输入示意图 (21)图3-27 IO逻辑的OSER8_MEM输出示意图 (22)图3-28单端口、伪双端口及双端口模式下的流水线模式 (26)图3-29独立时钟模式 (27)图3-30读写时钟模式 (27)图3-31单端口时钟模式 (28)图3-32 DSP宏单元 (29)图3-33 GW2ANR时钟资源 (32)图3-34 GCLK象限分布示意图 (33)图3-35 DQCE结构示意图 (34)图3-36 DCS接口示意图 (34)图3-37 DCS Rising Edge模式下的时序示意图 (34)图3-38 DCS Falling Edge模式下的时序示意图 (35)图3-39 PLL示意图 (35)图3-40 GW2ANR HCLK示意图 (37)图3-41 DQS示意图 (38)图5-1器件命名方法–ES (49)图5-2器件命名方法–Production (49)图5-3器件封装标识示例 (50)表目录表1-1术语、缩略语 (2)表2-1产品信息列表 (6)表2-2 GW2ANR-18列表 (6)表3-1 GW2ANR系列FPGA产品支持的输出I/O类型及部分可选配置 (13)表3-2 端口介绍 (14)表3-3 BSRAM信号功能 (23)表3-4存储器配置列表 (23)表3-5双端口混合读写数据宽度配置列表 (24)表3-6伪双端口混合读写数据宽度配置列表 (25)表3-7时钟模式配置列表 (27)表3-8 DSP端口描述 (29)表3-9内部寄存器描述 (30)表3-10 PLL端口定义 (36)表3-11片内晶振的输出频率选项 (39)表4-1绝对最大范围 (40)表4-2推荐工作范围 (41)表4-3电源上升斜率 (41)表4-4热插拔特性 (42)表4-5 POR电压标准 (42)表4-6 GW2ANR ESD - HBM (42)表4-7 GW2ANR ESD - CDM (42)表4-8推荐工作范围内DC电气特性 (42)表4-9静态电流 (44)表4-10 I/O推荐工作条件 (44)表4-11单端I/O DC电气特性 (45)表4-12差分I/O DC电气特性 (46)表4-13 CFU时序参数 (47)表4-14 BSRAM时序参数 (47)表4-15 DSP时序参数 (47)表4-16 Gearbox时序参数 (47)表4-17外部开关特性 (47)表4-18片内晶振特性参数 (48)表4-19 PLL特性参数 (48)1关于本手册 1.1手册内容1关于本手册1.1手册内容GW2ANR系列FPGA产品数据手册主要包括高云半导体GW2ANR系列FPGA产品特性概述、产品资源信息、内部结构介绍、电气特性、编程接口时序以及器件订货信息,帮助用户快速了解高云半导体GW2ANR系列FPGA产品以及特性,有助于器件选型及使用。

ca6350mv02_D3

ca6350mv02_D3
SPCA6350M
Hybrid Digital Still Camera Controller
Preliminary
OCT. 27, 2014 Version 0.2
iCatch Technology, Inc. reserves the right to change this documentation without prior notice. Information contained in this document is believed to be accurate and reliable. However, iCatch Technology, Inc. makes no warranty for any errors which may appear in this document. Contact iCatch Technology, Inc. to obtain the latest version of device specifications before placing your order. No responsibility is assumed by iCatch Technology, Inc. for any infringement of patent or other rights of third parties which may result from its use. In addition, the product depicted in this document is not authorized for use as critical components in life support devices/ systems or aviation devices/systems, where a malfunction or failure of the product may reasonably be expected to result in significant injury to the user, without the express written approval of iCatch Technology, Inc.

显卡型号大全【V2.1】

显卡型号大全【V2.1】
3D Vision
3D Vision
3D Vision
3D Vision
3D Vision
3D Vision
3D Vision
通用计算接口
CUDA
CUDA
CUDA
CUDA
CUDA
CUDA
CUDA
物理加速技术
PhysX
PhysX
PhysX
PhysX
PhysX
PhysX
PhysX
3DMark11分数
5230
4.1
4.1
4.1
4.1
OpenCL
1.1
驱动仅支持1.0
1.1
驱动仅支持1.0
1.1
驱动仅支持1.0
1.1
驱动仅支持1.0
1.1
驱动仅支持1.0
1.1
驱动仅支持1.0
1.1
驱动仅支持1.0
TDP
250W
215W
200W
160W
150W
160W
150W
供电接口
6pin+8pin
6pinX2
6pinX2
PureVideo HD
3D立体技术
3D Vision
3D Vision
3D Vision
3D Vision
3D Vision
通用计算接口
CUDA
CUDA
CUDA
CUDA
CUDA
物理加速技术
PhysX
PhysX
PhysX
PhysX

3DMark11分数
2520
3DMarkVantage分数
9900
1680
GeForce500系列
相关主题
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TCENTER : Temperature of the center of the glass surface (Test point 5)
Screen
General Information
Items Module Size Weight Pixel Pitch Active Display Area Surface Treatment Display Colors Number of Pixels Pixel Arrangement Display Mode Luminance of White Specification 1,286 (H) X 745 (V) 62.5 (Typ) 18,000 (Max) 0.630(H) x 0.630(W) 1209.6(H) X 680.4(V) Haze 44%, Anti Glare 16.7 Million 1920 x 1080 RGB vertical stripe Normally Black 450 (Typ.) cd/m2 colors pixel Unit mm g mm mm Note ±1.5mm
General Information --------------------------------------------------------------------------------------- (4) 1. Absolute Maximum Ratings ------------------------------------------------------------------------ (5) 2. Application information for DID (Digital Information Display) -------------------------------- (7) 3. Optical Characteristics --------------------------------------------------------------------------------- (8)
Page
1 / 28
Contents
Samsung Secret
Revision History -------------------------------------------------------------------------------------------- (3)
General Description --------------------------------------------------------------------------------------- (4)
5. Input Terminal Pin Assignment --------------------------------------------------------------------- (13) 5.1 Input Signal & Power 5.2 Inverter Input Pin Configuration 5.3 Inverter Input Power Sequence 5.4 LVDS Interface 5.5 Input Signals, Basic Display Colors and Gray Scale of Each Color 6. Interface Timing ---------------------------------------------------------------------------------------- (18) 6.1 Timing Parameters (DE only mode) 6.2 Timing Diagrams of interface Signal (DE only mode) 6.3 Power ON/OFF Sequence 7. Outline Dimension -------------------------------------------------------------------------------------- (21) 8. Packing --------------------------------------------------------------------------------------------------- (23) 9. Marking & Others --------------------------------------------------------------------------------------- (25) 10. General Precaution ----------------------------------------------------------------------------------- (26) 10.1 Handling 10.2 Storage 10.3 Operation 10.4 Operation Condition Guide 10.5 Others
MODEL
LTI550HN02
Doc. No
05-000-G-111128
Page
4 / 28
Samsung Secret
1. Absolute Maximum Ratings
If the condition exceeds maximum ratings, it can cause malfunction or unrecoverable damage to the device. Item Power Supply Voltage Storage temperature Glass Surface temperature (Operation) Symbol VDD TSTG Min. 10.8 -20 Max. 13.2 65 Unit V ℃ Note (1) (2)
Features
Landscape / Portrait RoHS compliance (Pb-free) High contrast ratio & aperture ratio with wide color gamut SVA(Super Vertical Align) mode Screen Wide viewing angle (±89°) Landscape / Portrait type compatible High speed response Landscape FHD(1920 x 1080) resolution (16:9) Portrait Low Power consumption Direct Type 16 CCFLs(Cold Cathode Fluorescent Lamp) DE(Data Enable) mode 2ch LVDS (Low Voltage Differential Signaling) interface (2pixel/clock)
MODEL
LTI550HN02
Doc. No
05-000-G-111128
Page
2 / 28
Revision History
Date 28. Nov. 2011 Rev. No Page Summary
Samsung Secret
000
all
First issued
MODEL
LTI550HN02
Samsung Secret
Product Information
DATE : 28. Nov. 2011
SAMSUNG TFT-LCD
MODEL : LTI550HN02
The Information Described in this Specification is Preliminary and can be changed without prior notice
Center
Tcenter
0
50

(3)
Shock ( non - operating )
Vibration ( non - operating )
X,Y,Z
VNOP -
30
1.5
G
G
(4)
(5)
Note (1) Ta= 25 ± 2 °C (2) Temperature and relative humidity range are shown in the figure below. a. 90 % RH Max. (Ta ≤ 39 °C) b. Relative Humidity is 90% or less. (Ta >39 °C) c. No condensation (3) 11ms, sine wave, one time for ±X, ±Y, ±Z axis (4) 10-300 Hz, Sweep rate 10min, 30min for X,Y,Z axis
4. Electrical Characteristics ------------------------------------------------------------------------------ (10) 4.1 TFT LCD Module 4.2 Back Light Unit 4.3 Inverter Input & Specification
APPROVED BY
DATE 28.NovE 28.Nov.2011
Application Engineering Part, LCD Division
Samsung Electronics Co . , LTD.
MODEL
LTI550HN02
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