(比亚迪75NF75)TS-MOS-PD-0007A[1].0 BF975NF75A__ Datasheet
NP74N04YUG、NP75N04YUG、NP75P03YDG等7款：功率MOSFET
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Ｔ ｕ ｄ ｒＥ ｉ８ ０ Ｐ功率 ＭＯＳ Ｅ ｈ ｎ ｅＦ ＴＳＲ ８ Ｄ ： ＦＴ
Ｖｓ ａ ｉｈ ｙ公 司推 出其 采用 针对 更 高 电压 器件 优化 的 新
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英 飞凌公 司推 出全新的 ６ ０ ｏＭＯＳＣ６Ｅ ５ ＶＣｏ ｌ ／ ６高性能
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ＭＯＳ Ｅ Ｆ Ｔ产 品相 同的性 能。新款 功率 ＭＯＳ Ｅ Ｆ Ｔ包括 额定 ＤＣ Ｄ ／ Ｃ转换 及一 般 ＯＴ ３封装元件更能节省空 问， 电压 为 ４ Ｖ和 ６ Ｖ的 Ｎ 沟道 ＭＯＳ Ｅ ０ ０ ． Ｆ Ｔ与额 定 电压 为 一０ 开关工作 ，比体 积更大 的 Ｓ ２ ３Ｖ
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比亚迪s7维修维修手册(比亚迪维修)
比亚迪宋燃油版最新配置单
C/0舒适型豪华型舒适型豪华型尊贵型舒适型豪华型尊贵型低配标配低配标配高配低配标配高配发动机483QB 483QB 476ZQA 476ZQA 476ZQA 487ZQA 487ZQA 487ZQA5T195T19————————6T256T256T25————————6DT356DT356DT35车身尺寸（mm）全景天窗—○—○●—○●豪华配置为选装根据订单选配电动天窗—●—●——●—不适用于全景天窗选配车型四门电动车窗●●●●●●●●主驾防夹电动车窗●●●●●●●●绿色隔热玻璃●●●●●●●●后风窗电加热除霜●●●●●●●●外后视镜（手动折叠，电加热除霜，带照脚灯）●—●——●——外后视镜（电动可控折叠，电加热除霜，带照脚灯,全景摄像头）—●—●——●—外后视镜（电动可控折叠，电加热除霜，带照脚灯，记忆功能,全景摄像头）————●——●前无骨雨刷●●●●●●●●后无骨雨刷●●●●●●●●17寸铝合金车轮●—●——●——18寸铝合金车轮—●—●●—●●车顶行李架●●●●●●●●发光LOGO ●●●●●●●●后背门电动解锁●●●●●●●●双排气管●●●●●●●●软内饰—●—●●—●●无缝安全气囊盖板●●●●●●●●全皮型转向盘●●●●●●●●普通手动防眩目内后视镜●●●●—●●—不适用于全景天窗选配车型自动防眩目内后视镜—○—○●—○●豪华配置适用于选装全景天窗车型行车记录仪—○—○●—○●选装配置装配在自动防眩目内后视镜上罗盘方向显示功能—○—○●—○●豪华配置适用于选装全景天窗车型前排遮阳板带化妆镜—●—●●—●●四向调节转向盘●●●●●●●●2.0T DCT 版本号/修改号车 型 配 置2.0L MT 1.5T MT 汽车工程研究院配置名称变速器备注4565*1830*1720/2660（长*宽*高/轴距)■外部配置■内部配置C/0舒适型豪华型舒适型豪华型尊贵型舒适型豪华型尊贵型2.0T DCT版本号/修改号车 型 配 置2.0L MT 1.5T MT 汽车工程研究院配置名称备注C/0舒适型豪华型舒适型豪华型尊贵型舒适型豪华型尊贵型2.0T DCT版本号/修改号车 型 配 置2.0L MT 1.5T MT 汽车工程研究院配置名称备注。
Truesemi 韩国信安 TSP75N75M参数
TJ, Junction Temperature( C) Figure 8. Gate Threshold Variation with Temperature
VGS, Gate-to-Source Voltage (V) Figure 9. Transfer Characteristics
4/6
TSP75N75M
1/6
美亚科技 Tel：0755-88828829
TSP75N75M
Electrical Characteristics
Symbol Off Characteristics
BVDSS IDSS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse VGS = 0V, ID = 250uA VDS = 75V, VGS = 0V VDS = 60V, TC = 125 °C IGSS VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V 75 83 1 10 100 -100 V uA uA nA nA
td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =60V, VGS =10V, ID =75A
2/6
TSP75N75M
Square Pulse Duration (sec) Figure 1. Normalized Effective Transient Thermal Impedance With Pulse Duration
75NF75MOS管
February 2007Rev 81/16Order codesPart number Marking Package Packaging STB75NF75T4B75NF75D²P AK Tape & reel STP75NF75P75NF75TO-220T ube STP75NF75FPP75NF75TO-220FPT ubeSTB75NF75STP75NF75 - STP75NF75FPN-channel 75V - 0.0095Ω - 80A - TO-220 - TO-220FP - D 2P AKSTripFET™ II Power MOSFETGeneral features■Exceptional dv/dt capability ■100% avalanche testedDescriptionThis Power MOSFET series realized withSTMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for T elecom and Computer applications. It is also intended for anyapplications with low gate drive requirements.Applications■Switching applicationType V DSS R DS(on)I D STB75NF7575V <0.011Ω80A (1)STP75NF7575V <0.011Ω80A (1)STP75NF75FP75V<0.011Ω80A (1)1.Current limited by package Contents STB75NF75 - STP75NF75 - STP75NF75FPContents1Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152/16STB75NF75 - STP75NF75 - STP75NF75FP Electrical ratings3/161 Electrical ratingsTable 1.Absolute maximum ratingsSymbol ParameterValueUnitD 2PAK /TO-220TO-220FPV DS Drain-source voltage (V GS = 0)75V V DGR Drain-gate voltage (R GS = 20K Ω)75V V GS Gate-source voltage± 20V I D (1)1.Current limited by packageDrain current (continuous) at T C = 25°C 8080 A I D (1)Drain current (continuous) at T C =100°C 7070 A I DM (2)2.Pulse width limited by safe operating areaDrain current (pulsed)320320 A P TOTT otal dissipation at T C = 25°C 30045W Derating factor2.00.3W/°C dv/dt (3)3.I SD ≤ 80A, di/dt ≤ 300A/µs, V DD ≤ V (BR)DSS , T j ≤ T JMAX Peak diode recovery voltage slope 12V/ns E AS (4)4. Starting T J = 25 o C, I D = 40A, V DD = 37.5VSingle pulse avalanche energy700mJ V ISO Insulation withstand voltage (RMS) from allthree leads to external heat sink (t=1s;T C =25°C)--2000V T J T stgOperating junction temperature Storage temperature-55 to 175°CTable 2.Thermal dataSymbol ParameterValueUnitD 2PAK /TO-220TO-220FP R thJC Thermal resistance junction-case max 0.53.33°C/W R thJA Thermal resistance junction-ambient max 62.5°C/W T lMaximum lead temperature for solderingpurpose (1)1. 1.6mm from case for 10sec)300°CElectrical characteristics STB75NF75 - STP75NF75 - STP75NF75FP4/162 Electrical characteristics(T CASE =25°C unless otherwise specified)Table 3.On/off statesSymbol ParameterTest conditions Min.Typ.Max.Unit V (BR)DSS Drain-source breakdownvoltageI D = 250µA, V GS = 075V I DSS Zero gate voltage drain current (V GS = 0)V DS = Max rating,V DS = Max rating @125°C 110µA µA I GSS Gate body leakage current (V DS = 0)V GS = ±20V±100nA V GS(th)Gate threshold voltage V DS = V GS , I D = 250µA 234V R DS(on)Static drain-source on resistanceV GS = 10V , I D = 40A0.00950.011ΩTable 4.DynamicSymbol ParameterTest conditions Min.Typ.Max.Unit g fs (1)1.Pulsed: pulse duration=300µs, duty cycle 1.5%Forward transconductance V DS = 15V , I D = 40A 20S C iss C oss C rss Input capacitance Output capacitance Reverse transfer capacitance V DS =25V , f = 1 MHz, V GS = 03700730240pF pF pF Q g Q gs Q gdTotal gate charge Gate-source charge Gate-drain chargeV DD = 60V , I D = 80A V GS =10V1172747160nC nC nCSTB75NF75 - STP75NF75 - STP75NF75FP Electrical characteristics5/16Table 5.Switching timesSymbol ParameterTest conditions Min.Typ.Max.Unit t d(on)t r t d(off)t fTurn-on delay time Rise timeTurn-off delay time Fall timeV DD = 37.5V , I D = 45A, R G =4.7Ω, V GS =10V Figure 15 on page 9251006630ns ns ns nsTable 6.Source drain diodeSymbol ParameterTest conditionsMinTyp.Max Unit I SD Source-drain current 80A I SDM (1)1.Pulse width limited by safe operating area Source-drain current (pulsed)320A V SD (2)2.Pulsed: pulse duration=300µs, duty cycle 1.5%Forward on voltage I SD = 80A, V GS = 0 1.5V t rr Q rr I RRMReverse recovery time Reverse recovery charge Reverse recovery currentI SD = 80A,di/dt = 100A/µs,V DD = 25V , T J = 150°C Figure 17 on page 913266010ns nC AElectrical characteristics STB75NF75 - STP75NF75 - STP75NF75FP6/162.1 Electrical characteristics (curves)Figure 1.Safe operating area for TO-220 -Figure 2.Thermal impedancefor TO-220 -Figure 3.Safe operating area for TO-220FP Figure 4.Thermal impedance for TO-220FPFigure 5.Output characterisics Figure 6.Transfer characteristicsSTB75NF75 - STP75NF75 - STP75NF75FP Electrical characteristics7/16Figure 7.Transconductance Figure 8.Static drain-source on resistanceFigure 9.Gate charge vs gate-source voltage Figure 10.Capacitance variationsFigure 11.Normalized gate threshold voltageFigure 12.Normalized on resistance vsElectrical characteristicsSTB75NF75 - STP75NF75 - STP75NF75FP8/16Figure 13.Source-drain diode forwardFigure 14.Normalized B VDSS vs temperatureSTB75NF75 - STP75NF75 - STP75NF75FP Test circuit9/163 Test circuitFigure 15.Switching times test circuit forFigure 16.Gate charge test circuitFigure 17.Test circuit for inductive loadFigure 18.Unclamped inductive load testFigure 19.Unclamped inductive waveformPackage mechanical data STB75NF75 - STP75NF75 - STP75NF75FP 4 Package mechanical dataIn order to meet environmental requirements, ST offers these devices in ECOPACK®packages. These packages have a Lead-free second level interconnect . The category ofsecond level interconnect is marked on the package and on the inner box label, incompliance with JEDEC Standard JESD97. The maximum ratings related to solderingconditions are also marked on the inner box label. ECOPACK is an ST trademark.ECOPACK specifications are available at: 10/16STB75NF75 - STP75NF75 - STP75NF75FP Package mechanical data11/16Package mechanical data STB75NF75 - STP75NF75 - STP75NF75FP12/16STB75NF75 - STP75NF75 - STP75NF75FP Package mechanical data13/16Packaging mechanical data STB75NF75 - STP75NF75 - STP75NF75FP14/165 Packaging mechanical dataTAPE AND REEL SHIPMENT D2PAK FOOTPRINT* on sales type DIM.mm inchMIN.MAX.MIN.MAX. A33012.992 B 1.50.059C12.813.20.5040.520 D20.20795G24.426.40.960 1.039 N100 3.937T30.4 1.197 BASE QTY BULK QTY10001000REEL MECHANICAL DATADIM.mm inch MIN.MAX.MIN.MAX.A010.510.70.4130.421 B015.715.90.6180.626 D 1.5 1.60.0590.063 D1 1.59 1.610.0620.063 E 1.65 1.850.0650.073 F11.411.60.4490.456 K0 4.8 5.00.1890.197 P0 3.9 4.10.1530.161 P111.912.10.4680.476 P2 1.9 2.10.0750.082 R50 1.574T0.250.350.00980.0137 W23.724.30.9330.956 TAPE MECHANICAL DATASTB75NF75 - STP75NF75 - STP75NF75FP Revision history15/166 Revision historyTable 7.Revision historyDate RevisionChanges03-Aug-20066Complete version 15-Sep-20067R DS(on) value update27-Feb-20078The document has been reformattedSTB75NF75 - STP75NF75 - STP75NF75FP16/16Please Read Carefully:Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.All ST products are sold pursuant to ST’s terms and conditions of sale.Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.UNL ESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SAL E ST DISCL AIMS ANY EXPRESS OR IMPL IED WARRANTY WITH RESPECT TO THE USE AND/OR SAL E OF ST PRODUCTS INCL UDING WITHOUT L IMITATION IMPL IED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNL ESS EXPRESSL Y APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.ST and the ST logo are trademarks or registered trademarks of ST in various countries.Information in this document supersedes and replaces all information previously supplied.The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.© 2007 STMicroelectronics - All rights reservedSTMicroelectronics group of companiesAustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America。
p75nf75场效应管
1/11April 2002.STP75NF75LSTB75NF75L STB75NF75L-1N-CHANNEL 75V - 0.009 Ω - 75A D 2PAK/I 2PAK/TO-220STripFET™ II POWER MOSFETs TYPICAL R DS (on) = 0.009Ωs EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED sLOW THRESHOLD DRIVEDESCRIPTIONThis MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements .APPLICATIONSs SOLENOID AND RELAY DRIVERS s DC MOTOR CONTROL s DC-DC CONVERTERSs AUTOMOTIVE ENVIRONMENTTYPE V DSS R DS(on)I D STB75NF75L/-1STP75NF75L75 V 75 V<0.011 Ω<0.011 Ω75 A 75 AABSOLUTE MAXIMUM RATINGS(•) Current limited by package(••) Pulse width limited by safe operating area.(1)I SD ≤75A, di/dt ≤ 500A/µs, V DD ≤ V (BR)DSS , T j ≤ T JMAX.(2) Starting T j = 25 o C, I D = 37.5A, V DD = 30VSymbol ParameterValue Unit V DS Drain-source Voltage (V GS = 0)75V V DGR Drain-gate Voltage (R GS = 20 k Ω)75V V GS Gate- source Voltage± 15V I D (•)Drain Current (continuous) at T C = 25°C 75A I D Drain Current (continuous) at T C = 100°C 70A I DM (••)Drain Current (pulsed)300A P tot Total Dissipation at T C = 25°C 300W Derating Factor2W/°C dv/dt (1)Peak Diode Recovery voltage slope 20V/ns E AS (2)Single Pulse Avalanche Energy 680mJ T stg Storage Temperature-55 to 175°CT jMax. Operating Junction TemperatureSTB75NF75L/-1 STP75NF75L2/11THERMAL DATAELECTRICAL CHARACTERISTICS (T case = 25 °C unless otherwise specified)OFFON (*)DYNAMICRthj-case Rthj-ambT lThermal Resistance Junction-case Thermal Resistance Junction-ambientMaximum Lead Temperature For Soldering PurposeMax Max Typ0.562.5300°C/W °C/W °CSymbol ParameterTest ConditionsMin.Typ.Max.Unit V (BR)DSS Drain-sourceBreakdown Voltage I D = 250 µAV GS = 075V I DSSZero Gate VoltageDrain Current (V GS = 0)V DS = Max RatingV DS = Max Rating T C = 125°C 110µA µA I GSSGate-body Leakage Current (V DS = 0)V GS = ± 15 V±100nASymbol ParameterTest ConditionsMin.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS = V GS I D = 250 µA 12.5V R DS(on)Static Drain-source On ResistanceV GS = 10 V I D = 37.5 A V GS = 5 VI D = 37.5 A0.0090.0100.0110.013ΩΩSymbol ParameterTest ConditionsMin.Typ.Max.Unit g fs (*)Forward Transconductance V DS = 15 VI D =37.5 A120S C iss C oss C rssInput Capacitance Output Capacitance Reverse Transfer CapacitanceV DS = 25V, f = 1 MHz, V GS = 04300660205pF pF pF3/11STB75NF75L/-1 STP75NF75LSWITCHING ONSWITCHING OFFSOURCE DRAIN DIODEPulsed: Pulse duration = 300 µs, duty cycle 1.5 %.(•)Pulse width limited by safe operating area.Symbol ParameterTest ConditionsMin.Typ.Max.Unit t d(on)t r Turn-on Delay Time Rise TimeV DD = 40 VI D = 37.5 A R G =4.7 Ω V GS = 4.5 V (Resistive Load, Figure 3)35150ns ns Q g Q gs Q gdTotal Gate Charge Gate-Source Charge Gate-Drain ChargeV DD = 60V I D = 75 A V GS = 5V75183190nC nC nCSymbol ParameterTest ConditionsMin.Typ.Max.Unit t d(off)t fTurn-off Delay Time Fall TimeV DD = 40 VI D = 37.5 A R G =4.7Ω, V GS = 4.5 V (Resistive Load, Figure 3)11060ns nsSymbol ParameterTest ConditionsMin.Typ.Max.Unit I SD I SDM (•)Source-drain CurrentSource-drain Current (pulsed)75300A A V SD (*)Forward On Voltage I SD = 75 AV GS = 01.3V t rr Q rr I RRMReverse Recovery Time Reverse Recovery Charge Reverse Recovery CurrentI SD = 75 Adi/dt = 100A/µs V DD = 20 V T j = 150°C (see test circuit, Figure 5)1003807.5ns nC AELECTRICAL CHARACTERISTICS (continued)STB75NF75L/-1 STP75NF75LSTB75NF75L/-1 STP75NF75LSTB75NF75L/-1 STP75NF75L6/11Fig. 3: Switching Times Test Circuits For ResistiveFig. 5: Test Circuit For Inductive Load Switching7/11STB75NF75L/-1 STP75NF75LDIM.mm.inch.MIN.TYP. MAX.MIN.TYP. TYP .A 4.4 4.60.1730.181A1 2.49 2.690.0980.106A20.030.230.0010.009B 0.70.930.0280.037B2 1.14 1.70.0450.067C 0.450.60.0180.024C2 1.21 1.360.0480.054D 8.959.350.3520.368D180.315E 1010.40.3940.409E18.50.334G 4.88 5.280.1920.208L 1515.850.5910.624L2 1.27 1.40.0500.055L3 1.4 1.750.0550.069M 2.43.20.0940.126R 0.40.016V20°8°0°8°D 2PAK MECHANICAL DATASTB75NF75L/-1 STP75NF75L10/11DIM.mm inchMIN.MAX.MIN.MAX.A010.510.70.4130.421B015.715.90.6180.626D 1.5 1.60.0590.063D1 1.59 1.610.0620.063E 1.65 1.850.0650.073F11.411.60.4490.456K0 4.8 5.00.1890.197P0 3.9 4.10.1530.161P111.912.10.4680.476P2 1.9 2.100750.082R50 1.574T0.250.35.0.00980.0137W23.724.30.9330.956DIM.mm inchMIN.MAX.MIN.MAX.A33012.992B 1.50.059C12.813.20.5040.520D20.20.795G24.426.40.960 1.039N100 3.937T30.4 1.197BASE QTY BULK QTY10001000REEL MECHANICAL DATA* on sales typeTUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)*D2PAK FOOTPRINTTAPE MECHANICAL DATASTB75NF75L/-1 STP75NF75L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is registered trademark of STMicroelectronics® 2002 STMicroelectronics - All Rights ReservedAll other names are the property of their respective owners.STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.11/11。
48V75Ah钛酸锂电池规格书
Lithium Titanate Battery Specification钛酸锂电池规格书Customer Signature客户回签栏多普三纲淮1.Scope使用范围This specification describes the basic performance, technical requirement, testing method, warning and caution of lithium titanate battery pack. The specification only applies to the battery packs made by Better Energy Saving Technology Co., Ltd.本标准规定了钛酸锂电池组的基本性能、技术要求测试方法及注意事项。
本标准只适用于天津普兰能源科技有限公司所生产的钛酸锂电池组。
2.Product Model 产品型号IFR18650-20S5P(18650-1500mAh)3.Product Specification 产品技术规格p>i_ermano 手音三纲半puerweno 寺普三纲米4.Battery Performance Test Criterion 电池性能测试规范4.1Appearance 外观There shall be no such defects such as scratch, flaw, crack, rust and leakage, which may adversely affect commercial value of battery.电池外观应没有划痕、破裂、污迹、生锈、漏液等影响市场的缺陷存在。
4.2Measurement Apparatus测量仪器(l)Dimension Measuring Instrument尺寸测量器具The dimension measurement shall be implemented by instruments with equal or more precision scale of 0.1mm.尺寸测量器具的精度等级应不小于0.1mm。
英飞凌 FS75R12N2T7_B15 EconoPACK 2 模块数据表
EconoPACK ™2 模块 采用第七代沟槽栅/场终止IGBT7和第七代发射极控制二极管带有温度检测NTC 特性•电气特性-V CES = 1200 V-I C nom = 75 A / I CRM = 150 A -沟槽栅IGBT7-低 V CEsat-过载操作达175°C•机械特性-高功率循环和温度循环能力-集成NTC 温度传感器-铜基板-低热阻的三氧化二铝 Al 2O 3 衬底-焊接技术-标准封装可选应用•辅助逆变器•电机传动•伺服驱动器产品认证•根据 IEC 60747、60749 和 60068 标准的相关测试，符合工业应用的要求。
描述FS75R12N2T7_B15EconoPACK ™2 模块内容描述 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1特性 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1可选应用 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1产品认证 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1内容 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 1封装 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2IGBT, 逆变器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3二极管,逆变器 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4负温度系数热敏电阻 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 5特征参数图表 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 6电路拓扑图 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 7封装尺寸 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 8模块标签代码 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14修订历史 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15免责声明 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .161封装表 1绝缘参数特征参数代号标注或测试条件数值单位绝缘测试电压V ISOL RMS, f = 50 Hz, t = 1 min 2.5kV 模块基板材料Cu内部绝缘基本绝缘 (class 1, IEC 61140)Al2O3爬电距离d Creep端子至散热器10.0mm 电气间隙d Clear端子至散热器7.5mm 相对电痕指数CTI>200相对温度指数 (电)RTI封装140°C 表 2特征值特征参数代号标注或测试条件数值单位最小值典型值最大值杂散电感,模块L sCE17nH 模块引线电阻,端子-芯片R CC'+EE'T C=25°C, 每个开关 3.3mΩ储存温度T stg-40125°C 模块安装的安装扭距M根据相应的应用手册进行安装M5, 螺丝36Nm 重量G180g 注:The current under continuous operation is limited to 50A rms per connector pin.2IGBT, 逆变器表 3最大标定值特征参数代号标注或测试条件数值单位集电极－发射极电压V CES T vj = 25 °C1200V 连续集电极直流电流I CDC T vj max = 175 °C T C = 100 °C75A 集电极重复峰值电流I CRM t P = 1 ms150A 栅极－发射极峰值电压V GES±20V表 4特征值特征参数代号标注或测试条件数值单位最小值典型值最大值集电极－发射极饱和电压V CE sat I C = 75 A, V GE = 15 V T vj = 25 °C 1.55 1.80VT vj = 125 °C 1.69T vj = 175 °C 1.77栅极阈值电压V GEth I C = 1.28 mA, V CE = V GE, T vj = 25 °C 5.15 5.80 6.45V 栅极电荷Q G V GE = ±15 V, V CE = 600 V 1.25µC 内部栅极电阻R Gint T vj = 25 °C2Ω输入电容C ies f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V15.1nF 反向传输电容C res f = 100 kHz, T vj = 25 °C, V CE = 25 V, V GE = 0 V0.053nF 集电极-发射极截止电流I CES V CE = 1200 V, V GE = 0 V T vj = 25 °C0.014mA 栅极-发射极漏电流I GES V CE = 0 V, V GE = 20 V, T vj = 25 °C100nA开通延迟时间(感性负载)t don I C = 75 A, V CE = 600 V,V GE = ±15 V, R Gon = 5.6 ΩT vj = 25 °C0.164µs T vj = 125 °C0.178T vj = 175 °C0.185上升时间(感性负载)t r I C = 75 A, V CE = 600 V,V GE = ±15 V, R Gon = 5.6 ΩT vj = 25 °C0.048µs T vj = 125 °C0.053T vj = 175 °C0.057关断延迟时间(感性负载)t doff I C = 75 A, V CE = 600 V,V GE = ±15 V, R Goff = 5.6 ΩT vj = 25 °C0.300µs T vj = 125 °C0.380T vj = 175 °C0.420下降时间(感性负载)t f I C = 75 A, V CE = 600 V,V GE = ±15 V, R Goff = 5.6 ΩT vj = 25 °C0.120µs T vj = 125 °C0.200T vj = 175 °C0.270开通损耗能量 (每脉冲)E on I C = 75 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Gon = 5.6 Ω, di/dt =1200 A/µs (T vj = 175 °C)T vj = 25 °C7.96mJ T vj = 125 °C10.8T vj = 175 °C12.3关断损耗能量 (每脉冲）E off I C = 75 A, V CE = 600 V,Lσ = 35 nH, V GE = ±15 V,R Goff = 5.6 Ω, dv/dt =3200 V/µs (T vj = 175 °C)T vj = 25 °C 5.02mJ T vj = 125 °C7.68T vj = 175 °C9.46(待续)表 4(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值短路数据I SC V GE≤ 15 V, V CC = 800 V,V CEmax=V CES-L sCE*di/dt t P≤ 8 µs,T vj=150 °C260At P≤ 7 µs,T vj=175 °C250结－外壳热阻R thJC每个 IGBT0.475K/W 外壳－散热器热阻R thCH每个 IGBT, λgrease= 1 W/(m*K)0.141K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN2018-14.3二极管,逆变器表 5最大标定值特征参数代号标注或测试条件数值单位反向重复峰值电压V RRM T vj = 25 °C1200V 连续正向直流电流I F75A 正向重复峰值电流I FRM t P = 1 ms150A I2t-值I2t t P = 10 ms, V R = 0 V T vj = 125 °C1150A²sT vj = 175 °C740表 6特征值特征参数代号标注或测试条件数值单位最小值典型值最大值正向电压V F I F = 75 A, V GE = 0 V T vj = 25 °C 1.72 2.10VT vj = 125 °C 1.59T vj = 175 °C 1.52反向恢复峰值电流I RM V R = 600 V, I F = 75 A,V GE = -15 V, -di F/dt =1200 A/µs (T vj = 175 °C)T vj = 25 °C43A T vj = 125 °C56T vj = 175 °C65(待续)表 6(续) 特征值特征参数代号标注或测试条件数值单位最小值典型值最大值恢复电荷Q r V R = 600 V, I F = 75 A,V GE = -15 V, -di F/dt =1200 A/µs (T vj = 175 °C)T vj = 25 °C 4.94µC T vj = 125 °C10.2T vj = 175 °C13.7反向恢复损耗（每脉冲）E rec V R = 600 V, I F = 75 A,V GE = -15 V, -di F/dt =1200 A/µs (T vj = 175 °C)T vj = 25 °C 1.45mJ T vj = 125 °C 3.32T vj = 175 °C 4.62结－外壳热阻R thJC每个二极管0.708K/W 外壳－散热器热阻R thCH每个二极管, λgrease= 1 W/(m*K)0.153K/W 允许开关的温度范围T vj op-40175°C注:T vj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN2018-14.4负温度系数热敏电阻表 7特征值特征参数代号标注或测试条件数值单位最小值典型值最大值额定电阻值R25T NTC = 25 °C5kΩR100偏差ΔR/R T NTC = 100 °C, R100 = 493 Ω-55%耗散功率P25T NTC = 25 °C20mW B-值B25/50R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]3375K B-值B25/80R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]3411K B-值B25/100R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]3433K 注:根据应用手册标定4 负温度系数热敏电阻6电路拓扑图图 17封装尺寸图 28 模块标签代码8模块标签代码图 3修订历史修订历史修订版本发布日期变更说明1.002021-12-16Final datasheet商标所有参照产品或服务名称和商标均为其各自所有者的财产。
SF75-00 温度分离铝制折叠滑动门系统配置选项详细信息说明书
System: SF75
A
3R 2R 1R
OUTSIDE
97
53
9
35
75
17
31
INSIDE
Description Horizontal Section - Connection Panel 1R - Hinge Jamb / Open In
Detail No: SF75-09
System: SF75
67
INSIDE
Description Horizontal Section - Connection Panel 3L - Panel 3R / Open In (M = 1st Ope5-16
System: SF75
A
67
1L
2L 3L
3R 2R 1R M
A
Scale 0.9
17
53 Wheel Block
OUTSIDE
193
37
9
86
Horizonal Lever Handle
Lock
Shootbolt
67
75
1L
2L
53 3R 2R 1R M
Horizonal
Lever
Handle
9
68
9
54
INSIDE
Description Horizontal Section - Connection Panel 2L - Sliding Post - Panel 3R / Open Out (M = 1st Opening Panel 3R)
Detail No: SF75-13
System: SF75
A
1L
2L
三模式探头系列P7500系列数据表P7516（含可选功能P75PDPM）特点与优势说明书
TriMode™Probe FamilyP7500SeriesDatasheetP7516with optional P75PDPMFeatures &Bene fitsTriMode™Probe –One Setup,Three Measurements without Adjusting Probe Tip Connections Differential Single EndedCommon Mode (Requires only one probe vs.conventional probing techniques)Signal Fidelity25GHz P7520A (with P75PST tip)20GHz P7520A 16GHz P751613GHz P7513A 8GHz P75086GHz P75064GHz P7504Versatile Connectivity –Solder Down,Handheld,Fixtured Variety of Solder-down Options TriMode™Solder TipsSmall Form Factor for High-density Probing Bandwidth Choices from 4to 25GHz1.5m Extension Cable for High-temperature Probing Quickly and Reliably Connect to Multiple Probe TipsPrecision Differential Probing Module –Optional Handheld and Fixtured ProbingSmall Precision Tapered Tips,an Articulated Joint for Compliance,and Variable Tip Spacing TekConnect ®Interface –TekConnect Scope/Probe Control and UsabilityDirect Control from Probe Compensation Box or from Scope Menu Automated Measurement Control through the TekConnect ®Interface to Connect to Tektronix Real-time OscilloscopesView TriMode/Attentuation Settings on Probe Compensation Box from Top or End PanelApplicationsExamples Include,but are Not Limited To:PCI Express 3.0,Serial ATA III,DDR2/3/4,QPI,XAUI1981DatasheetBefore TriMode:1Probe for Differential;2Probes for SE and Common Mode;or 1Probe Soldered and Resoldered 3times;2Probes for Common Mode.TriMode™Probing,Connectivity,and PerformanceTriMode™Probing ArchitectureOne-probe setup makes differential,single ended,and common mode measurements accurately and de finitively.Tektronix is a known leader when it comes to signal fidelity and signalacquisition.Building on our history of market-leading innovations inprobing,After TriMode (P75TLRST):1Probe for Differential,Single Ended,and Common Mode,with only 1setup required.we invented a revolutionary probing architecture called “TriMode™Probing”that de fines the next-generation industry benchmark for usability and signal fidelity.This architecture changes the rules of probing and allows you to work more effectively and ef ficiently.By enabling unique functionality,the P7500Series TriMode probes allow you to switch between differential,single ended,and common mode measurements without moving the probe from its connection points.Improved productivity is achieved by reducing setup time.One setup can be used to make the three different types of measurements all with the press of a button.The TriMode Probe architecture for the P7500Series probes continues the Tektronix tradition of high-bandwidth and low-DUT loading while providing improved connectivity and value.2TriMode™Probe Family —P7500SeriesConnectivity Plus –Solder Down –Handheld –FixturedThe P7500Series TriMode probe architecture offers various levels of connectivity and provides the highest probe fidelity available for real-time oscilloscopes.The multipoint connectivity solutions of the P7500Series include:TriMode Performance Solder Tip The highest-performance solder tip.Up to 25GHzbandwidth.TriMode Long-reach Solder Tip A high performance solder tip with a long reach and very small,low-pro file form factor.Up to 20GHzbandwidth.TriMode Resistor Solder Tip High-performance solder tip with easy-to-solder tip resistors.Up to 18GHzbandwidth.TriMode Extended-resistor Solder Tip Medium-performance solder tip with long easy-to-solder tip resistors.Up to 7GHzbandwidth.3DatasheetTriMode Micro-coax Tip Low-cost,quick-connect solder tips.Up to 4GHzbandwidth.TriMode High-temperature Tip When used with the 1.5m Socket Cable XL,this tip can be used in environments from –55°C to 150°C.Up to 10GHz bandwidth withDSP.Damped Wire Tip Low-cost solder tips ideal for high-density probing.Up to 8GHzbandwidth.Precision Differential Probing Module High-performance handheld probing module.Up to 18GHzbandwidth.Handheld and fixtured probing needs are met using the optional Precision Differential Probing Module (P75PDPM).Its small precision tapered tips,variable articulation of the probe tip,and quick-adjusting variable tip spacing provides the needed flexibility for adapting to vias and other test points of differing sizes from 30mils to 180mils.These precision connectivity tools enable you to access multiple signals on anything from convenient test pads to hard-to-reach,high-density circuitry.4TriMode™Probe Family —P7500SeriesSignal FidelityYou can be con fident in the signal fidelity of your measurements.The innovative new Tektronix differential architecture,coupled with the superior electrical performance of IBM SiGe Technology,provides the bandwidth and fidelity to meet the industry needs of today as well as tomorrow.The P7500Series Probe Architecture provides:Highest bandwidth available –25GHz Excellent step response Low-DUT loading High CMRRDifferential,single ended,or common mode measurements using one probePerformance You Can Count OnDepend on Tektronix to provide you with performance you can count on.In addition to industry-leading service and support,this product comes backed by a one-year warranty as standard.CharacteristicsP7500with P75PDPMTriMode Probe ArchitectureP7520AP7516P7513A P7508P7506P7504Bandwidth (Typical,Probe Only)>20GHz,A-B mode >18GHz,P75PDM,other modes >16GHz >13GHz >8GHz >6GHz >4GHz Rise Time (10-90%)(Typical,Probe Only)<27ps,A-B mode <29ps,other modes <32ps <40ps <55ps <75ps <105ps Rise Time (20-80%)(Typical,Probe Only)<18ps,A-B mode <20ps,other modes<24ps <28ps <35ps <50ps <70ps Attenuation(User Selectable)5X or 12.5X 5X or 12.5X 5X or 12.5X 5X or 12.5X 5X or 12.5X 5X or 12.5X Differential Input Range ±0.625V (5X)±1.6V (12.5X)±0.75V (5X)±1.75V (12.5X)±0.75V (5X)±1.75V (12.5X)±0.75V (5X)±1.75V (12.5X)±0.75V (5X)±1.75V (12.5X)±0.75V (5X)±1.75V (12.5X)Operating Voltage Window+3.7to –2.0V +4.0to –2.0V +4.0to –2.0V +4.0to –2.0V +4.0to –2.0V +4.0to –2.0V Offset Voltage Range+2.5to –1.5V,A-B mode +3.4to –1.8V,other modes +2.5to –1.5V,A-B mode +3.4to –1.8V,other modes +2.5to –1.5V,A-B mode +3.4to –1.8V,other modes +2.5to –1.5V,A-B mode +3.4to –1.8V,other modes +2.5to –1.5V,A-B mode +3.4to –1.8V,other modes +2.5to –1.5V,A-B mode +3.4to –1.8V,other modes DC Input Resistance (Differential)100k ohms 100k ohms 100k ohms 100k ohms 100k ohms 100k ohms Noise<33nV /√Hz (5X)<48nV /√Hz (12.5X)<33nV /√Hz (5X)<48nV /√Hz (12.5X)<33nV /√Hz (5X)<48nV /√Hz (12.5X)<33nV /√Hz (5X)<48nV /√Hz (12.5X)<33nV /√Hz (5X)<48nV /√Hz (12.5X)<33nV /√Hz (5X)<48nV /√Hz (12.5X)CMRR(Differential Mode)>60dB at DC >40dB at 50MHz >30dB at 1GHz >20dB at 10GHz >12dB at 20GHz>60dB at DC >40dB at 50MHz >30dB to 1GHz >20dB to 8GHz >15dB to 16GHz>60dB at DC >40dB at 50MHz >30dB to 1GHz >20dB to 7GHz >15dB to 13GHz>60dB at DC >40dB at 50MHz >30dB at 1GHz >25dB at 4GHz >20dB at 8GHz>60dB at DC >40dB at 50MHz >30dB at 1GHz >25dB at 3GHz >20dB at 6GHz>60dB at DC >40dB at 50MHz >30dB at 1GHz >28dB at 2GHz >25dB at 4GHzNondestructive Input Range ±15V ±15V ±15V ±15V ±15V ±15V Interface TekConnect™TekConnect™TekConnect™TekConnect™TekConnect™TekConnect™Cable Length1meter1meter1.3meters1.3meters1.3meters1.3metersFor additional characteristics,refer to the individual probe Technical Reference Manuals.5DatasheetTypical System Speci ficationsThe typical system speci fications in the table below are achieved using a P7520A probe with a DPO/DSA72504D or DPO/DSA73304D Oscilloscope and a P75PST solder tip.CharacteristicA-B ModeAll Other ModesSystem Bandwidth25GHz >18GHz System Rise Time (10%–90%)<20ps <29ps System Rise Time (20%–80%)<14ps<20psMinimum System Requirements /Instrument CompatibilityP7500Series TriMode Differential Probes are compatible with the DPO/DSA/MSO70000and TDS6000B/C Series TekConnect Oscilloscopes.The chart below shows recommended probe/oscilloscope model combinations.InstrumentBW (Scope)FW VersionRecommended ProbeDPO/DSA73304D 33GHz V6.4.1or higher P7520A DPO/DSA72504D 25GHz V6.4.1or higher P7520A DPO/DSA7200420GHz V3.0or higher P7520A DPO/DSA7160416GHz V3.0or higher P7516DPO/DSA7125412.5GHz V3.0or higher P7513A DPO/DSA708048GHz V3.0or higher P7508DPO/DSA706046GHz V3.0or higher P7506DPO/DSA704044GHzV3.0or higher P7504TDS6000C 12.5GHz,15GHz V5.1.7P7516,P7513A TDS6000B8GHz,6GHzV5.1.3P7508,P750680A03TekConnect Probe Interface V2.3All P7500Series probes RTPA2A TekConnect Probe InterfaceV2.3All P7500Series probesOrdering InformationP7520A TriMode™Differential Probe,20GHz,for TekConnect Interface Oscilloscopes.P7516TriMode™Differential Probe,16GHz,for TekConnect Interface Oscilloscopes.P7513A TriMode™Differential Probe,13GHz,for TekConnect Interface Oscilloscopes.P7508TriMode™Differential Probe,8GHz,for TekConnect Interface Oscilloscopes.P7506TriMode™Differential Probe,6GHz,for TekConnect Interface Oscilloscopes.P7504TriMode™Differential Probe,4GHz,for TekConnect Interface Oscilloscopes.All Include :One-year warranty,plus see Standard Accessories table.Service OptionsOptionDescriptonCA1Single Calibration or Functional Veri fication C3Calibration Service 3Years C5Calibration Service 5YearsD3Calibration Data Report 3Years (with Option C3)D5Calibration Data Report 5Years (with Option C5)G3Complete Care 3Years (includes loaner,scheduled calibration and more)G5Complete Care 5Years (includes loaner,scheduled calibration and more)R3Repair Service 3Years R5Repair Service 5YearsAdditional Service Products Available During Warranty (DW)R3PDW Repair service coverage 3years (includes product warranty period).3-year period starts at time of customer instrument purchaseR5PDWRepair service coverage 5years (includes product warranty period).5-year period starts at time of customer instrument purchase6TriMode™Probe Family —P7500SeriesStandard AccessoriesDescriptionP7520A/P7516P7513A/P7508P7506/P7504Reorder Part Number020-2790-xx(P7516/P7513A/P7508)020-2977-xx (P7506/P7504)The documentation kit contains:Printed Quick Start User Manuals,CD-ROM contains PDFs of basic probe and measurement literature,and the probe manuals (Quick Start User Manual and Technical Reference Manual)1each *11each 1each071-3048-xx (P7520A)Antistatic Wrist Strap1each 006-3415-xx Certi ficate of Traceable Calibration1each 1each 1each Standard with probe Data Calibration Report:Lists themanufacturing test results of your probe at the time of shipment and is included with every probe1each 1each 1eachStandard with probeDC Probe Calibration Fixture1each 067-1821-xx DC Probe Calibration Fixture1each 1each 067-1967-xx 50ΩCoax Cable –Male BNC to Male BNC1each 1each 1each 012-0208-xx 50ΩCoax Cable –Male SMA to Male SMA1each 1each 1each174-1120-xx Solder Tip Ramps (25each)1each (P7520A only)020-3118-xx P7520A/P7516/P7513A/P7508Accessory Box (See contents listing below 1through 7)1)TriMode Long-reach Solder Tip2each 2eachP75TLRST 2)G3PO Bullet Kit (includes 4bullets)1each 013-0359-xx 3)G3PO Bullet Removal Tool1each 003-1896-xx 4)Solder Kit:Solder Spool,Wire Spool1each 1each 020-2754-xx 5)Tape,Adhesive (Strip,10each)1each 1each 006-8237-xx 6)Marker Band Set (2each of 5colors)1each 1each 016-0633-xx 7)Socket Cable1each020-2954-xxP7506/P7504Accessory Box (See contents listing below 1through 6)1)Socket Cable1each 020-2954-xx 2)TriMode Micro-coax Tip4each 020-2955-xx 3)TriMode High-temperature Tip2each 020-2958-xx 4)Solder Kit:Solder Spool,Wire Spool 1each 020-2754-xx 5)Tape,Adhesive (Strip,10each)1each 006-8237-xx 6)Marker Band Set (2each of 5colors)1each016-0633-xx*1P7520A documentation is a printed instruction manual.7DatasheetContact Tektronix:ASEAN /Australasia (65)63563900Austria 0080022554835*Balkans,Israel,South Africa and other ISE Countries +41526753777Belgium 0080022554835*Brazil +55(11)37597627Canada 180********Central East Europe and the Baltics +41526753777Central Europe &Greece +41526753777Denmark +4580881401Finland +41526753777France 0080022554835*Germany 0080022554835*Hong Kong 4008205835India 0008006501835Italy 0080022554835*Japan 81(3)67143010Luxembourg +41526753777Mexico,Central/South America &Caribbean 52(55)56045090Middle East,Asia,and North Africa +41526753777The Netherlands 0080022554835*Norway 80016098People’s Republic of China 4008205835Poland +41526753777Portugal 800812370Republic of Korea 00180082552835Russia &CIS +7(495)7484900South Africa +41526753777Spain 0080022554835*Sweden 0080022554835*Switzerland 0080022554835*Taiwan 886(2)27229622United Kingdom &Ireland 0080022554835*USA 180*********European toll-free number.If not accessible,call:+41526753777Updated 10February 2011For Further Information.Tektronix maintains a comprehensive,constantly expanding collection of application notes,technical briefs and other resources to help engineers working on the cutting edge of technology.Please visit Copyright ©Tektronix,Inc.All rights reserved.Tektronix products are covered by U.S.and foreign patents,issued and rmation in this publication supersedes that in all previously published material.Speci fication and price change privileges reserved.TEKTRONIX and TEK are registered trademarks of Tektronix,Inc.All other trade names referenced are the service marks,trademarks,or registered trademarks of their respective companies.17Aug 201251W-20271-13Optional Tip AccessoriesDescriptionPart NumberTriMode Performance Solder TipP75PST P7500Series Precision Differential Probing ModuleP7500Precision Differential Probing Module Accessory Kit (See 1through 7below)P75PDPM 1)Tip Cable (1ps matched pair,1each)P75TC 2)Probing Module TipProbe Tips Replacement Kit 1Each (Right and left side)P75PMT 3)Accessory Kit;Ground Spring,Large 4Each 016-1998-xx 4)Accessory Kit;Ground Spring,Small 4Each 016-1999-xx 5)Handle,Adapter (Probing Module)367-0545-xx 6)G3PO Separator Tool 003-1897-xx 7)Ground Spring Tool 003-1900-xx TriMode Resistor Solder Tip020-2936-xx TriMode Extended-resistor Solder Tip 020-2944-xx Resistor Replacement Kit 020-2937-xx Solder Tip Ramps,25Each 020-3118-xx Socket Cable 020-2954-xx Socket Cable,XL020-2960-xx TriMode High-temperature Tip 020-2958-xx TriMode Micro-coax Tip 020-2955-xx Damped Wire Tip020-2959-xx Nexus Interposer DDR Solder Tip 020-3022-xx Deskew Fixture 067-1586-xx Probe PositionerPPM100Precision,3Position,Probe Positioner PPM203B 8200Series TekConnect ®Probe Interface 80A03(FW Version ≥2.3)RTSA Series TekConnect ®Probe InterfaceRTPA2A(FW Version ≥2.3)Tektronix is registered to ISO 9001and ISO 14001by SRI Quality SystemRegistrar.Product(s)complies with IEEE Standard 488.1-1987,RS-232-C,and with Tektronix Standard Codes and Formats.。
75N75中文资料
UNISONIC TECHNOLOGIES CO., LTD75N75Power MOSFET75Amps, 75VoltsN-CHANNEL POWER MOSTFETDESCRIPTIONThe UTC 75N75 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fastswitching speed, low thermal resistance, usually used at telecom and computer application.FEATURES* R DS(ON) = 12.5m Ω @V GS = 10 V* Ultra low gate charge ( typical 90 nC ) * Fast switching capability * Avalanche energy Specified* Improved dv/dt capability, high ruggednessSYMBOL1.GateTO-2201TO-252TO-251111TO-220F*Pb-free plating product number: 75N75LORDERING INFORMATIONOrder Number Pin AssignmentNormal Lead Free Plating Package 1 2 3Packing75N75-TA3-T 75N75L-TA3-T TO-220 G D S Tube 75N75-TF3-T 75N75L-TF3-T TO-220F G D S Tube 75N75-TM3-T 75N75L-TM3-T TO-251 G D S Tube 75N75-TN3-R 75N75L-TN3-R TO-252 G D S Tape Reel 75N75-TN3-T 75N75L-TN3-T TO-252 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: SourceABSOLUTE MAXIMUM RATINGSPARAMETER SYMBOL RATINGS UNITDrain to Source Voltage V DSS 75 VT C = 25 75 AContinuous Drain CurrentT C = 100 I D 56 ADrain Current Pulsed (Note 1) I DM 300 AGate to Source Voltage V GS ±20 VSingle Pulsed (Note 2)E AS 900 mJAvalanche EnergyRepetitive (Note 1) E AR 300mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 15 V/nsT C = 25 220 WTotal Power Dissipation Derating above 25 P D1.4 W/Junction Temperature T J +150 Storage Temperature T STG -55 ~ +150 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.THERMAL DATAPARAMETER SYMBOL MIN TYP MAX UNITThermal Resistance Junction-Ambient θJA 62.5 /W Thermal Resistance Junction-Case θJC 0.8 /W Thermal Resistance Case-Sink θCS 0.5/W ELECTRICAL CHARACTERISTICS (T C = 25 , unless otherwise specified)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITOff CharacteristicsDrain-Source Breakdown Voltage BV DSS V GS = 0 V, I D = 250 µA 75 V Breakdown Voltage Temperature Coefficient BV DSS /△T J I D = 1mA,Referenced to 250.08 V/V DS = 75 V, V GS = 0 V 20 µADrain-Source Leakage Current I DSS V DS = 75 V, V GS = 0 V,T J = 150250 µAGate-Source Leakage Current V GS = 20V, V DS = 0 V 100 nAGate-Source Leakage Reverse I GSSV GS = -20V, V DS = 0 V -100 nA On Characteristics Gate Threshold Voltage V GS(TH) V DS = V GS , I D = 250 µA 2.0 4.0 V Static Drain-Source On-StateResistanceR DS(ON) V GS = 10 V, I D = 48 A 12.5 15 m ΩDynamic Characteristics Input Capacitance C ISS 3300 pFOutput Capacitance C OSS 530 pFReverse Transfer Capacitance C RSS V GS = 0 V, V DS = 25 Vf = 1MHz80 pF Switching Characteristics Turn-On Delay Time t D(ON) 12 ns Rise Time t R 79 nsTurn-Off Delay Time t D(OFF) 80 nsFall Time t F V DD = 38V, I D =48A, V GS =10V, (Note 4, 5) 52 ns Total Gate Charge Q G 90 140 nCGate-Source Charge Q GS 20 35 nCGate-Drain Charge (Miller Charge) Q GDV DS = 60V, V GS = 10 VI D = 48A, (Note 4, 5)30 45 nCELECTRICAL CHARACTERISTICS(Cont.)PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITSource-Drain Diode Ratings and Characteristics Continuous Source Current I S 75Pulsed Source Current I SM 300 ADiode Forward Voltage V SD I S = 48A, V GS = 0 V 1.4 VReverse Recovery Time t rr 90 ns Reverse Recovery Charge Q rr I S = 48A, V GS = 0 V dI F / dt = 100 A/µs 300 µCNote 1. Repeativity rating: pulse width limited by junction temperature2. L=0.24mH, I AS =48A, R G =20Ω, Starting T J =253. I SD ≤48A, di/dt ≤300A/µs, V DD ≤BV DSS , Starting T J =254. Pulse Test: Pulse Width ≤300µs,Duty Cycle ≤2%5. Essentially independent of operating temperature.TEST CIRCUITS AND WAVEFORMSV DDV GS (Driver)I SD (D.U.T.)Body DiodeForward Voltage DropV DS(D.U.T.)Fig. 1A Peak Diode Recovery dv/dt Test CircuitFig. 1B Peak Diode Recovery dv/dt WaveformsTEST CIRCUITS AND WAVEFORMS (Cont.)R LDDV DS90%10%V GStFig. 2A Switching Test Circuit Fig. 2B Switching WaveformsFig. 3A Gate Charge Test CircuitFig. 3B Gate Charge Waveform10VLV DDI ASFig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching WaveformsTYPICAL CHARACTERISTICS101010101010Drain -Source Voltage , V DS (V)D r a i n C u r r e n t , I D (A )On-State CharacteristicsGate-Source Voltage , V GS (V)Transfer Characteristics110D r a i n -So u r c e O n -Re s i s t a n c e , R D S (O N ) (m Ω)Drain Current , I D (A)30708012131415On-Resistance Variation vs . Drain102101000.2Source-Drain Voltage , V SD (V)R e v e r s e D r a i n C u r r e n t , I S D (A )Reverse Drain Current vs . Allowable CaseTemperature 1.60.40.60.8 1.0 1.2 1.41050100204060905Drain-Source Voltage , V DC (V)C a p a c i t a n c e (p F )Capacitance Characteristics100010G a t e -t o -S o u r c e V o l t a g e , V G S (V )Total Gate Charge, Q G (nC)81012Gate Charge Characteristics6402515203035TYPICAL CHARACTERISTICS(Cont.)-100D r a i n -S o u r c e B r e a k d o wn V o l t a g e , B V D S S (N o r m a l i z e d )Junction Temperature , T J (℃)-5050200100150Breakdown Voltage Variation vs .D r a i n -S o u r c eO n -R e s i s t a n c e , R D S (O N ), (N o r m a l i z e d )-10050100150On-Resistance Variation vs . 01.0Junction Temperature , T J (℃)-502000.1Drain -Source Voltage, V D (V)D r a i n C u r r e n t , I D ,(A )Maximum Safe Operating100Case Temperature, T C (℃)Maximum Drain Current vs . CaseSquare Wave Pulse Duration , t 1 (sec)T h e r m a l R e s p o n s e , Z θJ C (t )11E-50.10.110Transient Thermal Response Curve1E-41E-30.01。
Mini-Circuits产品说明书
6
0.7
1.15 1.60 1.05 1.30 UU179
C O
PRICE
N N
$
E
C
T
I
Qty.
O N
(1-9)
kf 79.95 kf 139.95
— 172.95 — 182.95 — 172.95 — 189.95 — 189.95
— 349.00 — 295.00 — 295.00 — 265.00
POWER SPLITTERS/COMBINERS
12 WAY-0° 1 to 1700 MHz
50&75Ω
ZFSC-12
SURFACE MOUNT
ZN12PD
JEPS-12
PSC-12
MODEL NO.
u JEPS-12-10 PSC-12-1
FREQ. RANGE
MHz
fL-fU
50-1000 1-200
ZC16PD-24 ZC16PD-900 ZC16PD-960 ZC16PD-960W
650-2400 800-900 890-960 700-1000
ZC16PD-1900 ZC16PD-1900W ZC16PD-23 ZC16PD-2185
1700-1900 1500-2100 1500-2300 1800-2600
25 14 30 20 28 20 26 15
30 20 30 15 32 20 30 16
1.5 2.5 1.9 3.5
3.0 4.2 2.2 4.0
1.1 1.3 0.7 1.1 0.5 0.9 0.4 0.8 0.7 1.0
1.2 1.4 1.0 1.3 0.5 0.9 1.0 1.6 0.9 1.5
TN75温度传感器用户手册
2005 Microchip Technology Inc.DS21935A_CN 第1页TCN75A特性•温度-数字转换器•12位分辨率时的精度：-+25°C 时，为±0.5°C （典型值）-+25°C 至+100°C 时，为±3°C （最大值）•用户可选分辨率：9 – 12位•工作电压范围：2.7V 至5.5V •双线接口：兼容I 2C™•工作电流：200µA （典型值）•关断电流：2µA （最大值）•节能的单次温度测量•封装形式：MSOP-8，SOIC-8典型应用•个人电脑和服务器•硬盘驱动器和其他PC 外设•娱乐系统•办公设备•数据通信设备•通用温度监测设备典型应用概述Microchip Technology Inc.的TCN75A 数字温度传感器将-40°C 到+125°C 范围内的温度转换为数字字，精度为±1.5°C （典型值）。
TCN75A 产品带有用户可编程寄存器，可灵活用于各种温度检测应用中。
用户可选择寄存器设置，允许选择9位到12位的温度测量精度，省电关断模式和单次测量模式（在关断模式下根据命令进行单次转换）配置，以及温度警告输出和温度迟滞限制参数。
当温度变化超过规定限制时，TCN75A 输出一个警告信号。
用户可设置警告输出信号的极性（低电平有效或高电平有效），用作温控器工作的比较器输出或基于微处理器系统的温度事件中断输出。
此传感器具有业界标准的双线I 2C™兼容串行接口，允许用一根串行总线控制多达八个器件。
这些特性使得TCN75A 成为低成本的复杂多温度区监测应用的理想选择。
封装类型V DDR TCN75ASDA SCLKI/O 端口R PULL-UPPICmicro ®12348765A0V DD A1A2SDA GNDALERT SCLK 单片机ALERTV DDSDA GND ALERT SCLK 123487658引脚SOIC ，MSOPA0V DD A1A2T C N 75A双线串行温度传感器TCN75ADS21935A_CN 第2页 2005 Microchip Technology Inc.1.0电气特性绝对最大额定值†V DD ....................................................................... 6.0V 所有输入/输出引脚上的电压.....GND - 0.3V 至5.5V 存储温度............................................-65°C 至+150°C 通电时的环境温度.............................-55°C 至+125°C 结温（T J ）.........................................................150°C 所有引脚上的ESD 保护（HBM:MM ）......(4kV:400V)每个引脚上的闭锁电流.................................. ±200mA†注：如果器件运行参数超过上述各项最大额定值，即可能对器件造成永久性损坏。
75NF75中文资料
75NF75中⽂资料HEXFET ?Power MOSFETz Dynamic dv/dt Rating z 175°C Operating Temperature z Fast switching z Ease of Parallelingz Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50watts. The low thermal resistance and low package cost of the TO-220 contribute to its Pin1–Gate Pin2–Drain Pin3–Sourcewide acceptance throughout the industry.Absolute Maximum RatingsParameter Max. Units I D @T C =25°C Continuous Drain Current, V GS @10V 75 ① I D @T C =100°C Continuous Drain Current, V GS @10V60 I DMPulsed Drain Current ② 300 A P D @T C =25°C Power Dissipation200 WLinear Derating Factor 1.5 W/°C V GS Gate-to-Source Voltage±20 V E ARSingle Pulse Avalanche Energy ③ 23 mJ dv/dtPeak Diode Recovery dv/dt ④ 5.9 V/ns T J T STG Operating Junction and Storage Temperature Range –55 to +175 Soldering Temperature, for 10 seconds 300(1.6mm from case) ?°CMounting Torque,6-32 or M3 screw10 Ibf . in(1.1N . m)Thermal ResistanceParameter Min. Typ. Max. Units R θJC Junction-to-case — — 0.65 R θCS Case-to-Sink, Flat, Greased Surface — 0.50 — R θJA Junction-to-Ambient ——62°C /W175NF75HEXFET ?Power MOSFETElectrical Characteristics @T J =25 ?°C (unless otherwise specified)Parameter Min.Typ.Max.Units Test Conditions V (BR)DSSDrain-to-Source Breakdown Voltage 75— — V V GS =0V,I D =250uA △V (BR)DSS / △T JBreakdown Voltage Temp. Coefficient —0.074— V/°C Reference to 25°C,I D =1mA R DS(on) Static Drain-to-Source On-resistance —— 13.0m ΩV GS =10V,I D =40A ⑤ V GS(th)Gate Threshold Voltage 2.0 — 4.0 V V DS =V GS , I D =250µA g fsForward Transconductance 20— — S V DS =25V,I D =40A ⑤ —— 25 V DS =75V,V GS =0V I DSS Drain-to-Source Leakage current —— 250µA V DS =60V,V GS =0V,T J =150°C Gate-to-Source Forward leakage —— 100V GS =20V I GSS Gate-to-Source Reverse leakage —— -100nAV GS =-20VQ g Total Gate Charge —— 160Q gs Gate-to-Source charge —— 29 Q gdGate-to-Drain ("Miller") charge —— 55 nC I D =40AV DS =60VV GS =10V See Fig.6 and 13⑤t d(on) Turn-on Delay Time —13 — t r Rise Time —64 — t d(off) Turn-Off Delay Time —49 — t fFall Time—48 — nSV DD =38V I D =40A R G =2.5Ω V GS =10V See Figure 10⑤L DInternal Drain Inductance—4.5—L S Internal Source Inductance —7.5 — nH Between lead, 6mm(0.25in.)from packageand center of die contact C iss Input Capacitance —3820— C oss Output Capacitance—610— C rssReverse Transfer Capacitance—130— pF V GS =0V V DS =25Vf =1.0MH Z See Figure 5Source-Drain Ratings and CharacteristicsParameter Min. Typ. Max.UnitsTest ConditionsI S Continuous Source Current .(Body Diode)— — 75I SMPulsed Source Current . (Body Diode) ② — — 300 AMOSFET symbol showing theintegral reverse p-n junction diode. V SD Diode Forward Voltage — — 1.3 V T J =25°C,I S =40A,V GS =0V ⑤ t rr Reverse Recovery Time — 100 150 nS Q rrReverse Recovery Charge—410610nCT J =25°C,I F =40A di/dt=100A/µs ⑤t on Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + L D )Notes:2③ Starting T J = 25°C, L = 370mH, R G = 25Ω, I AS = 40A, V GS =10V (See Figure 12) ④ I SD ≤ 40A, di/dt ≤ 300A/µs, V DD ≤ V (BR)DSS ,T J ≤ 175°C ⑤ Pulse width ≤ 400µs; duty cycle ≤ 2%. ① Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ② Repetitive rating; pulse width limited by max. junctiontemperature. (See fig. 11) 75NF75。
BR75N75
用途: 用于高功率 DC/DC 转换和功率开关。
N-CHANNEL MOSFET/N 沟道 MOS 晶体管
Purpose: These devices are well suited for high efficiency switching DC/DC converters
最小值 Min 75
典型值 Typ
最大值 Max 1 10 ±0.1 4 10 1.3
2 7 58 3150 300 240 18.2 15.6 70.5 13.8
单位 Unit V μA μA μA V mΩ S V pF pF pF ns ns ns ns
佛 山 市 蓝 箭 电 子 有 限 ELECTRONICS CO., LTD.
BR75N75(CS75N75)
佛 山 市 蓝 箭 电 子 有 限 公 司 FOSHAN BLUE ROCKET ELECTRONICS CO., LTD.
Symbol Rating Unit
VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGSS EAS EAR IAR PD(Tc=25℃) TJ,TSTG
75 75 70 300 ±20 480 13.1 75 150 -55 to 150
V A A A V mJ mJ A W ℃
电性能参数/Electrical Characteristics(Ta=25℃) 参数符号 测试条件 Symbol Test Conditions BVDSS VGS=0V ID=250μA VDS=75V VGS=0V IDSS VDS=75V VGS=0V TC=125℃ IGSS VGS=±20V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) VGS=10V ID=40A gFS VDS=5V ID=30A VSD VGS=0V IS=40A Ciss Coss VDS=25V VGS=0V f=1MHz Crss td(on) tr td(off) tf VDD=30V RG=25Ω ID=2A VGS=10V RL=25Ω
Equinox Fusion 75 用户手册说明书
Equinox Fusion 75Order code: EQLED002User Manual Contents1.Safety Instructions2.Features & Specifications3.How To Set The Unit4.How To Control The Unit5.Troubleshooting6.Fixture CleaningP lease keep this User Guide for future consultation. If you sell the unit to another user be sure that they also receive this.Unpack and check carefully that there is no transportation damage before using the unit.•Before operating, ensure that the voltage and frequency of the power supply match the power requirements of the unit.•It’s important to ground the yellow/green conductor to earth in order to avoid electric shock.•The unit is for indoor use only. Use only in a dry location.•The unit must be installed in a location with adequate ventilation, at least 50cm from adjacent surfaces. Be sure that no ventilation slots are blocked.•Disconnect the mains power before replacement or servicing.•Make sure there are no flammable materials close to the unit while operating as they may cause a fire hazard.•Always use a safety cable when installing this unit. Do not carry the unit by its head only, always carry it using the base.•The maximum ambient temperature is to: 40. Don’t operate it where the temperature is higher than this.•In the event of a serious operating problem stop using the unit immediately. Never try to repair the unit by yourself. Repairs carried out by unskilled people can lead to damage or malfunction. Please contact the nearest authorized technical assistance center. Always use the same type spare parts.•Do not touch any power cables during operation as the high voltage may cause an electric shock. Warning•To prevent or reduce the risk of electrical shock or fire, do not expose the unit to rain or moisture.Do not open the unit within five minutes after switching off.•The housing and lenses must be replaced if they are visibly damaged. InstallationThe unit should be mounted via its screw holes onto the bracket. Always ensure that the unit is firmly fixed to avoid vibration and slipping while operating. Make sure that the structure to which you are attaching the unit is secure and is able to support a weight of 10 times of the unit’s weight. Always use a safety cable that can hold 12 times the weight of the unit when installing the fixture.The equipment must be installed by professionals and it must be installed in a place where it is out of the reach of people and no one can pass by or under it.Control:Sound active, auto, Master/slave and DMX-512 modesDMX Channels:1,4,8 and 12Electronic dimming:0-100%Electronic strobe with pulse and random effects High output with low power consumptionCompact size and low weightVoltage: 100V~240V, 50/60HzFuse:T 3.0APower consumption:65WLight source:15W x 5pcs 6 in1 RGBWAUV LED Dimension: 173 x 173 x 249 mmWeight: 3.6 kgPan/Tilt: 540°/180°Power sockets: IECXLR sockets: 3-pin XLR IN/OUT DisplayShows the various menus and selected functionsButtonMENU Selects the programming functionsDOWN To go backward in the selected functionsUP To go forward in the selected functionsENTER Confirms the selected functionsMains inputConnection to the power supply.DMX input/outputFor DMX-512 linking. Use a 3-pin XLR cables to link to the controller or to other units.To select any of the given functions, press the MODE button up to where the required function is showing on the display. Select the function by pressing the ENTER button and the display will blink. Use the DOWN and UP buttons to change the mode. Once the required mode has been selected, press the ENTER button to confirm. To go back to the functions without any changes, press the MENU button again. Press and hold the MENU button for one second or wait for one minute to go back to the main menu.The main functions are as below:ADDR 001-512CHAN MODE 1, 4, 8, 12SL1SL2SLNDNASTSH1SH2SH3SHNDSH4ONSOUNOFFSENS 0-100ONLEDOFFDISP→DSIP INVERTYESPAN INVERTNOYESTILT INVERTNOTESTHOURSVERMenuRESTDMX Address SettingPress the MODEENTER button and the display will blink. Use the DOWN and UP buttons to choose the address from 1-255. Once the address has been selected, press the ENTER button to confirm. To go back to the functions without any changes press the MENU button again. Press and hold the MENU button for one second orwait for one minute to go back to the main menu.Slave ModePress the MENU ENTER button and the display will blink. Use the DOWN and UPbuttons to select the (normal) or (2 light show) or nast for master mode. Once the mode has been selected, press the ENTER button to confirm. To go back to the functions without any changes press the MENU button again. Press and hold the MENU button for one second or wait for one minute to goback to the main menu.Show ModePress the MENUENTERdisplay will blink. Use the DOWN and UP buttons to select(show 2) or(show 3) or (show 4) mode. Once the mode has been selected, press the ENTER button to confirm. To go back to the functions without any changes press the MENU button again. Press and hold the MENU button for one second or wait for oneminute to go back to the main menu.Sound ModePress the MENU button to select . Press the ENTERdisplay will blink. Use the DOWN and UP buttons to select (sound on) or oFF (sound off) mode. Once the mode has been selected, press the ENTER button to confirm. To go back to the functions without any changes press the MENU button again. Press and hold the MENU button for one second or wait for one minute to go back to the main menu.Led DisplayPress the MENUENTERdisplay will blink. Use the DOWN and UP (Leddisplay on) or oFF (Led display off) mode. Once the mode has been selected, press the ENTER button to confirm. To go back to the functions without any changes press the MENU button again. Press and hold the MENU button for one second or wait for one minute to go back to the mainmenu.Display InversionPress the MENU button to select . Press the ENTER button to changeto the mode(display normal), It will be automatically saved after 8seconds. Press the ENTER button again to select the mode(displayinversion). To go back to the functions press the MENU button. Press and hold the MENU button for one second or wait for one minute to go back to the main menu.Display normal mode is for floor standing the unit.Display inversion mode is for hanging the unit from a ceiling. Pan InversionPress the MENUENTER display will blink. Usethe DOWN and UP buttons to select (normal) or(pan inversion) mode. Once the mode has beenselected, press the ENTER button to confirm. To go back to the functions without any changes press theMENU button again. Press and hold the MENU button for one second or wait for one minute to go back to the main menu.Tilt InversionPress the MENU button to select. Press the ENTER display will blink. Use the DOWN and UP buttons to select (normal) or (tilt inversion) mode. Once the mode has been selected, press the ENTER button to confirm. To go back to the functionswithout any changes press the MENU button again. Press and hold the MENU button for one second or wait for one minute to go back to the main menu.Auto-TestPress the MENUENTER button and theunit will run a self-test with its built-in programs. To go back to the functions without any changes press the MENU button again. Press and hold the MENU button for one second or wait for one minute to go back tothe main menu.ResetPress the MENUENTER button and allchannels of the unit will return to their standard position.1. Master/slave built-in preprogram function2. Universal DMX controllerThere is no need to turn the unit off when you change the DMX address as new DMX address setting will be effected at once. Every time you turn the unit on, it will show “” on the display and move all the motors totheir ‘home’ position and you may hear some noises for about 20 seconds. After that the unit will be ready to receive DMX signal or run the built in programs.By linking the units in master/slave connection, the first unit will control the other units to give an automatic, sound activated, synchronized light show. This function is good when you want an instant show. You have to set the first unit as master and select show 1, show 2, show 3 or show 4 from the Show Mode . The other units must be set to either Slave 1 (normal) or Slave 2 (2 light show) mode. A DMX cable between the units for daisy chain is needed. 2-light showIn slave mode , Slave 1 means the unit works normally and Slave 2 means 2-light show. In order to create a great light show, you can set Slave 2 on the second unit to get contrast movement to each other, even if you have two units only.By using a universal DMX controller to control the units, you will need to set a DMX address from 1 to 512 so that the units can receive a DMX signal.Press the MENUis showing on the display. Press theENTER button and the display will blink. Use the DOWN and UP buttons to change the DMX-512 address. Once the address has been selected, press the ENTER button to confirm. To go back to the functions without any changes press the MENU button again. Press and hold the MENU button one second or wait for one minute to go back to the main menu.Please refer to the below diagram to address your first 4 units ：Channel mode Unit 1 AddressUnit 2 Address Unit 3 Address Unit 4 Address 12 channels 11325373 pin XLR: Pin 1: GND, Pin 2: Negative signal (-), Pin 3: Positive signal (+)1-ch Mode 4-ch Mode 8-ch Mode 12-chMode Function Value1Show 000 – 007 Blackout008 – 067 show 1068 – 127 show 2128 – 187 show 3188 – 255 Random shows sensitivity low to high1 1 1 Pan 000 - 255 Pan 0°~ 540°2 2 2 Tilt 000 - 255 Tilt 0°~ 180°3 3 Dimmer 000 - 255 Master Dimmer 0-100%12 Strobe000-007 Blackout008-255 Strobe slow to fast410Colour Marco 000 - 004 Blackout 005 – 014 Red 015 – 024 Green 025 – 034 Blue 035 – 044 White 045 – 054 Amber 055 – 064 UV 065 – 074 Yellow075 – 084 Pink085 – 094 Purple095 – 104 Cyan105 – 114 Pastle Red （R+ W ） 115 – 124 Pastle Blue （B+ W ） 125 – 134 Pastle Pink （R+ B + W ） 135 – 144 Pastle Green （G+ W ） 145 – 150 Blackout151 – 200 Colour Fade slow to fast 221 – 255 Colour Jump slow to fast3 4 Red 000 - 255 0-100% 4 5 Green 000 - 255 0-100% 5 6 Blue 000 - 255 0-100% 6 7 White 000 - 255 0-100% 7 8 Amber 000 - 255 0-100% 8 9 UV 000 - 255 0-100%11 Movement Marco000 – 007 Blackout008 – 067 Movement 1 slow to fast068 – 127 Movement 2 slow to fast128 – 187 Movement 3 slow to fast188 – 255 Random shows sensitivity low to high1.In the last unit, the DMX has to be terminated with a termination plug.Solder a 120 ohm 1/4W resistor between pin 2(DMX-) and pin 3(DMX+) into a 3-pin XLR-plug and plug it in the DMX-output of the last unit.2.Connect the units together in a `daisy chain` with an XLR plug fromthe output of the unit to the input of the next unit. The cable can not be branched or split to a `Y` cable.3.The DMX output and input connectors are a pass-through type tomaintain the DMX circuit when one of the units’ power is disconnected.4.Each lighting unit needs to have an address setup to receive the datasent by the controller. The address number is between 0-512 (usually0 & 1 are equal to 1).5.The end of the DMX 512 system should be terminated to reduce signalerrors. 6. 3 pin XLR cable wiring configuration5.TroubleshootingFollowing are a few common problems that may occur during operation and some suggestions for easy troubleshooting:A. The unit does not work, no light and the fan does not work1.Check the connection of the power and the main fuse.B. Not responding to DMX controller1.Check DMX cables to see if linked correctly.2.If the DMX address is showing but no response to the controller,check the address settings and DMX polarity.3.Try another DMX controller.C. No response to the sound1.Make sure the unit is not receiving a DMX signal.2.Check the microphone to see if it is good by tapping it. Themicrophone is located on the bottom plate of the unit.6. Fixture CleaningThe cleaning of external optical lenses must be carried out periodically to optimize light output. Cleaning frequency depends on the environment in which the fixture operates: damp, smoky or particularly dirty surrounding can cause a greater accumulation of dirt on the unit’s optics.Clean with a soft cloth using normal glass cleaning fluid or mild soapy water.•Always dry the parts carefully.•Clean the external optics at least every 20 days.。
byd 7kw充电桩 参数
byd 7kw充电桩参数
【实用版】
目录
1.BYD 7kW 充电桩概述
2.BYD 7kW 充电桩参数详细说明
3.BYD 7kW 充电桩使用体验与建议
正文
1.BYD 7kW 充电桩概述
BYD 7kW 充电桩是一款适合家庭使用的充电设备，它可以为纯电动汽车提供快速、安全的充电服务。
该充电桩支持多种充电模式，能够满足不同用户的充电需求。
2.BYD 7kW 充电桩参数详细说明
以下是 BYD 7kW 充电桩的主要参数：
(1) 功率：7kW（最大功率可达 11kW）
(2) 输入电压：AC 220V/380V
(3) 输出电压：DC 500-750V
(4) 输出电流：最大 15A
(5) 充电时间：约 3-4 小时（以电量为 80% 计算）
(6) 工作温度：-20℃至 +45℃
(7) 存储温度：-40℃至 +70℃
(8) 湿度：5%-95%（不结露）
(9) 保护功能：过压、过流、过温、短路等多重保护
3.BYD 7kW 充电桩使用体验与建议
BYD 7kW 充电桩在家庭充电设备中具有较高的性价比，使用体验良好。
但在使用过程中，用户还需注意以下几点：
(1) 为保证充电安全，请务必使用原装或符合国家标准的充电线缆。
(2) 在充电过程中，请勿让充电线缆沾水或处于潮湿环境中。
(3) 充电桩应安装在通风良好的环境中，避免阳光直射。
(4) 如发现充电桩异常，请立即切断电源并与售后服务人员联系。
总之，BYD 7kW 充电桩作为一款适合家庭使用的充电设备，性能稳定，安全可靠。
施耐德 LC1D65M7C TeSys Deca接触器 数据表
Product data sheetCharacteristicsLC1D65M7CTeSys Deca接触器,3极(3NO),AC-3/AC-3e,<=440V,65A,220VAC,螺钉端子主要信息产品系列TeSys Deca 产品系列TeSys Deca 产品类型接触器产品短名LC1D接触器应用领域应用于无感或微感负载、电阻炉应用于功率因数大于等于0.95的交流负载中使用类别AC-4 AC-1 AC-3AC-3e 极数3P额定工作电压 [Ue]电源回路: <= 690 V AC 25...400 Hz 电源回路: <= 300 V DC额定工作电流 [Ie]80 A (当运行温度 <=60 °C) 当运行电压<=<= 440 V AC AC-1对于电源回路 65 A (当运行温度 <=60 °C) 当运行电压<=<= 440 V AC AC-3对于电源回路 65 A (当运行温度 <=60 °C) 当运行电压<=<= 440 V AC AC-3e对于电源回路控制回路电压 [Uc]220 V AC 50/60 Hz补充信息电动机功率 (kW)11 KW 当运行电压<=400 V AC 50/60 Hz (AC-4) 37 KW 当运行电压<=500 V AC 50/60 Hz (AC-3)18.5 KW 当运行电压<=220/240 V AC 50/60 Hz (AC-3) 30 KW 当运行电压<=380/400 V AC 50/60 Hz (AC-3) 37 KW 当运行电压<=660/690 V AC 50/60 Hz (AC-3) 37 KW 当运行电压<=415/440 V AC 50/60 Hz (AC-3) 37 KW 当运行电压<=500 V AC 50/60 Hz (AC-3e)18.5 KW 当运行电压<=220/240 V AC 50/60 Hz (AC-3e) 30 KW 当运行电压<=380/400 V AC 50/60 Hz (AC-3e) 37 KW 当运行电压<=660/690 V AC 50/60 Hz (AC-3e) 37 KW 当运行电压<=415/440 V AC 50/60 Hz (AC-3e)型号LC1D 回路触点类型 3 NO 保护盖无约定发热电流 [Ith]10 A (当运行温度 <=60 °C) 对于信号回路 80 A (当运行温度 <=60 °C) 对于电源回路额定短时耐受电流 [Icw]520 A 当运行温度<=40 °C 可持续10 s 对于电源回路 900 A 当运行温度<=40 °C 可持续1 s 对于电源回路110 A 当运行温度<=40 °C 可持续10 分钟 对于电源回路 260 A 当运行温度<=40 °C 可持续1 分钟 对于电源回路 100 A 可持续1 s 对于信号回路 120 A 可持续500 ms 对于信号回路 140 A 可持续100 ms 对于信号回路T h e i n f o r m a t i o n p r o v i d e d i n t h i s d o c u m e n t a t i o n c o n t a i n s g e n e r a l d e s c r i p t i o n s a n d /o r t e c h n i c a l c h a r a c t e r i s t i c s o f t h e p e r f o r m a n c e o f t h e p r o d u c t s c o n t a i n e d h e r e i n .T h i s d o c u m e n t a t i o n i s n o t i n t e n d e d a s a s u b s t i t u t e f o r a n d i s n o t t o b e u s e d f o r d e t e r m i n i n g s u i t a b i l i t y o r r e l i a b i l i t y o f t h e s e p r o d u c t s f o r s p e c i f i c u s e r a p p l i c a t i o n s .I t i s t h e d u t y o f a n y s u c h u s e r o r i n t e g r a t o r t o p e r f o r m t h e a p p r o p r i a t e a n d c o m p l e t e r i s k a n a l y s i s , e v a l u a t i o n a n d t e s t i n g o f t h e p r o d u c t s w i t h r e s p e c t t o t h e r e l e v a n t s p e c i f i c a p p l i c a t i o n o r u s e t h e r e o f .N e i t h e r S c h n e i d e r E l e c t r i c I n d u s t r i e s S A S n o r a n y o f i t s a f f i l i a t e s o r s u b s i d i a r i e s s h a l l b e r e s p o n s i b l e o r l i a b l e f o r m i s u s e o f t h e i n f o r m a t i o n c o n t a i n e d h e r e i n .与继电器配合使用的熔丝10 A gG, 对于信号回路 符合 IEC 60947-5-1125 A gG 当运行电压<=<= 690 V 配合 2 型, 对于电源回路160 A gG 当运行电压<=<= 690 V 配合 1 型, 对于电源回路平均阻抗1 MΩ - Ith 80 A 50 Hz 对于电源回路额定绝缘电压 [Ui]信号回路: 690 V 符合 IEC 60947-1电源回路: 1000 V 符合 IEC 60947-4-1过电压类别III污染等级3额定冲击耐受电压 [Uimp]6 KV 符合 IEC 60947安全可靠等级B10d = 1369863 次 标称负载的接触器 符合 EN/ISO 13849-1B10d = 20000000 次 机械负载的接触器 符合 EN/ISO 13849-1机械寿命6 Mcycles电气寿命 1.5 Mcycles 80 A AC-1 Ue条件下 <= 440 V1.5 Mcycles 65 A AC-3 Ue条件下 <= 440 V2.5 Mcycles 42 A AC-3 Ue条件下 660/690 V1.5 Mcycles 65 A AC-3e Ue条件下 <= 440 V2.5 Mcycles 42 A AC-3e Ue条件下 660/690 V控制回路特性AC当50/60 Hz浪涌抑制模块无内置浪涌抑制模块控制电压限额0.3...0.6 Uc (-40…60 °C 线圈释放 50/60 Hz0.8...1.1 Uc (-40…60 °C 线圈吸合 50 Hz0.85...1.1 Uc (-40…60 °C 线圈吸合 60 Hz(~50Hz吸合)功耗 (VA)245 VA 60 Hz cos phi 0.75 (at 20 °C)245 VA 50 Hz cos phi 0.75 (at 20 °C)(~50Hz保持)功耗 (VA)26 VA 60 Hz cos phi 0.3 (at 20 °C)26 VA 50 Hz cos phi 0.3 (at 20 °C)热消散6…10 W at 50/60 Hz动作时间20...26 ms 闭合8...12 ms 分断最大操作频率3600 次/小时当60 °C接线能力控制回路: 螺栓紧固 1 1…4 mm² 电缆类型: 软线 不带接线端子控制回路: 螺栓紧固 2 1…4 mm² 电缆类型: 软线 不带接线端子控制回路: 螺栓紧固 2 1…2.5 mm² 电缆类型: 软线 带接线端子控制回路: 螺栓紧固 1 1…4 mm² 电缆类型: 硬线 不带接线端子控制回路: 螺栓紧固 2 1…4 mm² 电缆类型: 硬线 不带接线端子控制回路: 螺栓紧固 1 1…2.5 mm² 电缆类型: 软线 带接线端子电源回路: 接线端 1 2.5…25 mm² 接线片外径Ø: 13 mm 电缆类型: 软线 不带接线端子电源回路: 接线端 2 2.5…16 mm² 接线片外径Ø: 13 mm 电缆类型: 软线 不带接线端子电源回路: 接线端 1 2.5…25 mm² 接线片外径Ø: 13 mm 电缆类型: 软线 带接线端子电源回路: 接线端 2 2.5…10 mm² 接线片外径Ø: 13 mm 电缆类型: 软线 带接线端子电源回路: 接线端 1 2.5…25 mm² 接线片外径Ø: 13 mm 电缆类型: 硬线 不带接线端子电源回路: 接线端 2 2.5…16 mm² 接线片外径Ø: 13 mm 电缆类型: 硬线 不带接线端子紧固扭矩控制回路: 1.2 N.m 通过 螺栓紧固 用螺丝刀 Ø 6 平口控制回路: 1.2 N.m 通过 螺栓紧固 用螺丝刀 No 2 十字螺丝电源回路: 5 N.m 通过 螺栓紧固 用螺丝刀 Ø 6...8 mm 一字电源回路: 5 N.m 通过 电缆连接器 用螺丝刀 Ø 8 一字 螺丝: M6电源回路: 5 N.m 通过 电缆连接器 用螺丝刀 No 3 十字螺丝 螺丝: M6控制回路: 1.2 N.m 通过 螺栓紧固 用螺丝刀 pozidriv No 2辅助触点类型类型 机械连接 1 NO + 1 NC 符合 IEC 60947-5-1类型 与主触头状态成镜像 1 NC 符合 IEC 60947-4-1信号回路频率25...400 Hz最小开关电流 [Imin]5 MA 对于信号回路绝缘电阻> 10 MΩ 对于信号回路不重迭时间 1.5 Ms 失电 NC及NO触点之间1.5 Ms 得电 NC及NO触点之间安装方式导轨安装底板安装环境标准IEC 60947-4-1GB 14048.4产品认证CCC[RETURN]CE[RETURN]UKCAIP 保护等级IP2X 前面板 主回路适用 符合 IEC 60529防护措施TH 符合 IEC 60068-2-30周围空气温度-40…60 °C 运行60…70 °C 有降容-60…80 °C 存储工作海拔3000 m 无降容耐火及耐异常高温能力850 °C 符合 IEC 60695-2-11抗冲击、震动性能抗震性能 触点打开时 (2 gn (5...300 Hz)) 符合 IEC 60068-2-6抗冲击性能 11 ms 触点打开时 (8 gn) 符合 IEC 60068-2-27抗冲击性能 11 ms 触点闭合时 (10 gn) 符合 IEC 60068-2-27抗震性能 触点闭合时 (3 gn (5...300 Hz)) 符合 IEC 60068-2-6高度127 Mm宽度75 Mm深度119 Mm净重 1.4 Kg包装单位Unit Type of Package 1PCENumber of Units in Package 11Package 1 Height10.0 CmPackage 1 Width14.1 CmPackage 1 Length14.2 CmPackage 1 Weight 1.341 KgUnit Type of Package 2S03Number of Units in Package 212Package 2 Height30.0 CmPackage 2 Width30.0 CmPackage 2 Length40.0 CmPackage 2 Weight16.611 KgUnit Type of Package 3P06Number of Units in Package 396Package 3 Height75.0 CmPackage 3 Width60.0 CmPackage 3 Length80.0 CmPackage 3 Weight142.888 Kg可持续性产品类型Green Premium 产品REACh法规REACh 声明REACh（不含 SVHC）是欧盟ROHS指令符合欧盟ROHS声明无有毒重金属是无汞是中国 ROHS 管理办法中国 ROHS 声明RoHS 豁免信息是环境披露产品环境文件流通资料产品使用寿命终期信息WEEE该产品必须经特定废物回收处理后弃置于欧盟市场，绝不可丢弃于垃圾桶中。
比亚迪分布式储能系统(DESS)——分体式(欧版)
1比亚迪分布式储能系统（DESS）——分体式（欧版）分体式储能系统指由换流器柜（可选择是否安装光伏充电器）、储能电池及BMS柜，进行相应的组合构成多种容量、功率、功能的分布式储能系统。
输出为三相交流，适用于负荷要求较大，或用电设备为三相供电的场合。
1、系统原理图PV ArrayGridLoad P＜9KWSolarInverterP＜40KWLoad P＜40KWSolarInverterP＜12KW系统原理图2、性能特点换流器采用隔离设计，安全可靠；高容量、高安全性的铁电池；可并网或离网运行；可与光伏发电等交流发电设备（最大12KW）组成微网系统；并网运行时，最大允许接入40KW负载或光伏等交流发电设备。
2 3、功能描述DESS可以将光伏电池发出的电能经过变换后，存入储能电池，也可以再经过换流器逆变成交流电，供用户使用或者回馈电网，在这个过程中，用户可以使用到干净、清洁的电能，同时在电网停电时，DESS可独立为用户提供稳定的电能；在电网不允许馈电时，DESS系统可以实现系统内的用电、发电平衡，即以最大能力的保证用户少用电网电能，也保证系统运行符合电网要求。
本系统同时预留有光伏发电等交流发电（最大12KW，不包含柴油发电机）设备接入端口，且可以并网或独立带载运行，或者组建微型电网，DESS系统具备同时匹配自身光伏发电、外接交流电源、用电负载及电网输入的能力。
为了满足更大发电设备或负荷的接入，分体式DESS系列产品中的混合系统，增加预留了40KW的光伏发电交流设备的接入端口，以及大功率负载接入端口（40KW），该功能仅在并网运行时有效。
4、换流器柜4.1 命名规则DESS-P09H-C00-E4.2 规格参数DESS：分布式储能英文缩写。
P09：PCS，功率为9KW，三相；H：指混合系统。
C：光伏充电器；00：无光伏充电器；04：4KW；08：8KW。
U：美国；C：国内；E：欧洲；无编码时默认欧版。
byd 7kw充电桩 参数
byd 7kw充电桩参数随着电动汽车市场的快速发展，充电桩作为基础设施的重要组成部分，其性能和参数成为消费者关注的焦点。
本文将为您详细解析一款备受关注的充电桩——BYD 7kW充电桩，并分析其适用场景及优势。
一、概述BYD 7kW充电桩的特点BYD 7kW充电桩是一款具有较高性价比的充电设备，适用于家庭、商业及公共场所。
它具有以下几个显著特点：1.高效充电：7kW的功率可满足大部分电动汽车的充电需求，缩短充电时间。
2.智能识别：支持充电桩与电动汽车之间的智能通信，确保充电过程安全、稳定。
3.兼容性强：支持市面上大部分电动汽车的充电接口，为不同品牌电动汽车提供充电便利。
4.操作简便：人性化设计，操作界面直观易懂，便于用户上手。
二、详细解析BYD 7kW充电桩的参数1.输入电压：AC 220V，适用于我国电网标准。
2.输出电压：根据电动汽车电池组电压而定，如30-60V。
3.输出功率：7kW，充电速度相对较快。
4.充电方式：有线充电，配备专用充电线。
5.保护功能：具备过压、过流、短路等保护功能，确保充电安全。
三、分析BYD 7kW充电桩的适用场景及优势1.适用场景：适合家庭、商业及公共场所充电，特别是电动汽车普及度较高的地区。
2.优势：a) 充电速度快，提高充电效率。
b) 兼容性强，满足多种电动汽车充电需求。
c) 智能识别，确保充电过程安全稳定。
d) 操作简便，用户体验良好。
四、总结：BYD 7kW充电桩的综合评价综合以上分析，BYD 7kW充电桩在性能、充电效率、兼容性等方面表现出色，适用于各种场景。
如果您正在考虑购买一款充电桩，BYD 7kW充电桩是一个不错的选择。
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BF975NF75A
75V N-Channel MOSFET
General Description
This Power MOSFET device has specifically been designed to minimize
input capacitance and gate charge. It is therefore suitable as
primary switch in advanced high-efficiency, high-frequency
isolated DC-DC converters for Telecom and Computer
applications. It is also intended for any applications with low
gate drive requirements.
Features
z V DS =75 V
z I D =75A
z R DS(ON) ≤9m Ω (V GS=10V,I D=40A)
z Fast switching
z100% avalanche tested
z Improved dv/dt capability
Absolute Maximum Ratings
Symbol Parameter Value Unit
Voltage 75 V
V DS Drain-Source
I D Drain Current(continuous)at Tc=25℃ 75 A I DM Drain Current (pulsed) （Note1）300 A
Voltage±20 V V GS Gate-Source
E AS Single Pulse Avalanche Energy （Note2）700 mJ I AR Avalanche Current （Note1）75 A E AR Repetitive Avalanche Energy （Note1）16 mJ dv/dt Peak Diode Recovery dv/dt （Note3）11 V/ns P D Power Dissipation (T C = 25°C) 210 W
T J,Tstg Operating
junction and Storage Temperature Range-55 to +150 ℃
T L Maximum Lead Temperature for Soldering Purpose 300 ℃
Ordering Information
Part Number Package
Packaging
BF975NF75A
TO-220 Tube
Thermal Data
Symbol Parameter
Max. Unit Rthj-Case Thermal Resistance Junction-Case 0.6 /W ℃ Rthj-Amb
Thermal Resistance Junction-Ambient
63.0
/W ℃
Electrical Characteristics(T c = 25℃)
Symbol Parameter Test Conditions
Min. Typ. Max.
Unit
V (BR)DSS Drain-Source Breakdown Voltage
I D =250uA, V GS =
0V 75 V
V DS =75V, V GS =
0V 1 uA I DSS Zero Gate Voltage Drain Current V DS =75V,V GS =0V ,Tc=125℃ 10 uA I GSS
Gate-Body Leakage
Current
V GS =±20V ,V DS =
0V ±100nA
V GS(th) Gate Threshold Voltage V DS =V GS ,I D =250uA 2.0 2.6 4.0 V R DS(on) Static Drain-Source On Resistance V GS =10V ,I D =
40A 7 9 m ΩC iss
Input Capacitance
5145
pF
C oss Output Capacitance 276 pF C rss
Reverse Transfer Capacitance
V DS =25V,f=1MHZ,V GS =0V
31
pF
t d(on) Turn-On Delay Time 32 ns t r Rise Time 28 ns t d(off) Turn-Off Delay Time 104 ns t f Fall Time V DD =37.5V, I D =40A
V GS =10V ,R G =4.7Ω （Note4，5）
35 ns Q g
Total Gate Charge
112
nC
Q gs Gate-Source Charge 25 nC Q gd Gate-Drain Charge V DD =60V, I D =75A
V GS =10V （Note4，5） 45 nC
V SD (*) Forward On Voltage I F =75A ,V GS =
0V 0.75 1.5 V T rr
Reverse Recovery Time
V DD =37.5V,I F =75A,di/dt=100A/us
（Note4）
130 ns
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. I AS = 75 A, V DD = 37.5V, R G = 25 Ω, Starting T J = 25°C
3. I SD ≤ 75A, di/dt ≤ 300A/μs, V DD ≤ BV DSS , Starting T J = 25°C
4. Pulse Test : Pulse width ≤ 300μs, duty cycle ≤ 1.5%
5. Essentially independent of operating temperature (*)Pulsed:Pulse duration
Typical characteristics (25 unless noted)℃
Figure 1 Output Characteristics Figure 2 Transfer Characteristics
Figure 3 Normalized Threshold Voltage Figure 4 Normalized BV DSS vs.Temperature
vs.Temperature
Figure 5 Normalized on Resistance Figure 6 Source-Drain Diode Forward
vs Temperature Characteristics
Figure 7 Capacitance
Figure 8 Gate Charge
vs Case Temperature
Figure 11 Normalized Maximum Transient Thermal Impedance
Package Drawing
Dimensions In Millimeters
Dimensions In Inches
Symbol Min Max Min Max
A 4.42 4.72 0.174 0.186
A1 2.52 2.82 0.099 0.111
b 0.71 0.91 0.028 0.036
b1 1.17 1.37 0.046 0.054
c 0.36 0.46 0.014 0.018 c1 1.17 1.37 0.046 0.054
D 9.95 10.25 0.392 0.404
E 8.99 9.29 0.354 0.366
E1 12.55 12.85 0.494 0.506
e 2.540TYP 0.100TYP
e1 4.98 5.18 0.196 0.204 F 2.59 2.89 0.102 0.114
L 13.08 13.48 0.515 0.531
L1 2.47 2.87 0.097 0.113
Φ
3.79 3.89 0.149 0.153
RESTRICTIONS ON PRODUCT USE。