IPD30N03S2L-10中文资料

Opti MOS
IPD30N03S2L-10
Parameter Symbol Conditions Unit
min.typ.max. Thermal characteristics2)
Thermal resistance, junction - case R thJC-- 1.5K/W Thermal resistance, junction -
ambient, leaded
R thJA--100
SMD version, device on PCB R thJA minimal footprint--75
6 cm2 cooling area3)--50 Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS V GS=0 V, I D= 1 mA30--V Gate threshold voltage V GS(th)V DS=V GS, I D=50 µA 1.2 1.6 2.0
Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V,
T j=25 °C
-0.011µA
V DS=30 V, V GS=0 V,
T j=125 °C2)
-1100
Gate-source leakage current I GSS V GS=20 V, V DS=0 V-1100nA Drain-source on-state resistance R DS(on)V GS=4.5 V, I D=30 A-12.014.6mΩDrain-source on-state resistance R DS(on)V GS=10 V, I D=30 A, -8.310.0mΩ
Values
Parameter Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics 2)Input capacitance C iss -1200-pF
Output capacitance
C oss -470-Reverse transfer capacitance C rss -130-Turn-on delay time t d(on)-7-ns
Rise time
t r -21-Turn-off delay time t d(off)-29-Fall time
t f
-
10
-
Gate Charge Characteristics 2)Gate to source charge Q gs -4 4.9nC
Gate to drain charge Q gd -1016.3Gate charge total Q g -3142Gate plateau voltage V plateau
-
3.3
-
V
Reverse Diode
Diode continous forward current 2)I S --30A
Diode pulse current
2)
I S,pulse --120Diode forward voltage V SD
V GS =0 V, I F =30 A, T j =25 °C -
0.9
1.3
V
Reverse recovery time 2)t rr V R =15 V, I F =I S , d i F /d t =100 A/µs -31-ns
Reverse recovery charge 2)
Q rr V R =15 V, I F =I S , d i F /d t =100 A/µs
-29-nC
1)
Current is limited by bondwire; with an R thJC = 1.5K/W the chip is able to carry 76A at 25°C. For detailed information see Application Note ANPS071E at /optimos
T C =25 °C
Values V GS =0 V, V DS =25 V, f =1 MHz
V DD =15 V, V GS =10 V, I D =30 A, R G =5.4 ΩV DD =24 V, I D =30 A, V GS =0 to 10 V
2) Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
1 Power dissipation
5 Typ. output characteristics
9 Typ. Drain-source on-state resistance
13 Typical avalanche energy
Published by
Infineon Technologies AG
Am Campeon 1-12
D-85579 Neubiberg
© Infineon Technologies AG 1999
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